JP2007096277A5 - - Google Patents

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Publication number
JP2007096277A5
JP2007096277A5 JP2006223962A JP2006223962A JP2007096277A5 JP 2007096277 A5 JP2007096277 A5 JP 2007096277A5 JP 2006223962 A JP2006223962 A JP 2006223962A JP 2006223962 A JP2006223962 A JP 2006223962A JP 2007096277 A5 JP2007096277 A5 JP 2007096277A5
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JP
Japan
Prior art keywords
layer
forming
electrode layer
electrode
organic compound
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JP2006223962A
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English (en)
Japanese (ja)
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JP2007096277A (ja
JP5177976B2 (ja
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Priority to JP2006223962A priority Critical patent/JP5177976B2/ja
Priority claimed from JP2006223962A external-priority patent/JP5177976B2/ja
Publication of JP2007096277A publication Critical patent/JP2007096277A/ja
Publication of JP2007096277A5 publication Critical patent/JP2007096277A5/ja
Application granted granted Critical
Publication of JP5177976B2 publication Critical patent/JP5177976B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2006223962A 2005-08-31 2006-08-21 半導体装置の作製方法 Expired - Fee Related JP5177976B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006223962A JP5177976B2 (ja) 2005-08-31 2006-08-21 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005252876 2005-08-31
JP2005252876 2005-08-31
JP2006223962A JP5177976B2 (ja) 2005-08-31 2006-08-21 半導体装置の作製方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2012093742A Division JP2012178579A (ja) 2005-08-31 2012-04-17 半導体装置
JP2012251932A Division JP5521021B2 (ja) 2005-08-31 2012-11-16 半導体装置及び電子機器

Publications (3)

Publication Number Publication Date
JP2007096277A JP2007096277A (ja) 2007-04-12
JP2007096277A5 true JP2007096277A5 (zh) 2009-09-17
JP5177976B2 JP5177976B2 (ja) 2013-04-10

Family

ID=37981541

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006223962A Expired - Fee Related JP5177976B2 (ja) 2005-08-31 2006-08-21 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP5177976B2 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009260313A (ja) 2008-03-26 2009-11-05 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法及び半導体装置の作製方法
US8610155B2 (en) 2008-11-18 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, method for manufacturing the same, and cellular phone
US20100253902A1 (en) * 2009-04-07 2010-10-07 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and manufacturing method thereof
JP5605097B2 (ja) * 2010-09-03 2014-10-15 ソニー株式会社 電子素子の製造方法
KR101385070B1 (ko) * 2010-12-24 2014-04-15 한국생산기술연구원 레이저간섭 노광을 이용한 대면적 미세패턴 제작 방법, 상기 방법을 이용하여 제작된 미세패턴의 비평면적 전사 방법 및 이를 이용하여 미세 패턴을 전사한 물품
KR102388701B1 (ko) * 2016-04-12 2022-04-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법 및 플렉시블 디바이스의 제작 방법
JP7341798B2 (ja) 2019-08-30 2023-09-11 キヤノン株式会社 半導体装置、発光装置、表示装置、撮像装置、電子機器、照明装置、及び移動体

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3809681B2 (ja) * 1996-08-27 2006-08-16 セイコーエプソン株式会社 剥離方法
JP2003109773A (ja) * 2001-07-27 2003-04-11 Semiconductor Energy Lab Co Ltd 発光装置、半導体装置およびそれらの作製方法
JP4567941B2 (ja) * 2001-12-28 2010-10-27 株式会社半導体エネルギー研究所 半導体装置の作製方法及び表示装置の作製方法
JP4748986B2 (ja) * 2002-11-01 2011-08-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2004349539A (ja) * 2003-05-23 2004-12-09 Seiko Epson Corp 積層体の剥離方法、積層体の製造方法、電気光学装置及び電子機器
JP4731893B2 (ja) * 2003-12-02 2011-07-27 株式会社半導体エネルギー研究所 発光装置の作製方法

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