JP2007096276A5 - - Google Patents

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Publication number
JP2007096276A5
JP2007096276A5 JP2006223961A JP2006223961A JP2007096276A5 JP 2007096276 A5 JP2007096276 A5 JP 2007096276A5 JP 2006223961 A JP2006223961 A JP 2006223961A JP 2006223961 A JP2006223961 A JP 2006223961A JP 2007096276 A5 JP2007096276 A5 JP 2007096276A5
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JP
Japan
Prior art keywords
layer
electrode
forming
organic
electrode layer
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JP2006223961A
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English (en)
Japanese (ja)
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JP5121183B2 (ja
JP2007096276A (ja
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Priority to JP2006223961A priority Critical patent/JP5121183B2/ja
Priority claimed from JP2006223961A external-priority patent/JP5121183B2/ja
Publication of JP2007096276A publication Critical patent/JP2007096276A/ja
Publication of JP2007096276A5 publication Critical patent/JP2007096276A5/ja
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Publication of JP5121183B2 publication Critical patent/JP5121183B2/ja
Expired - Fee Related legal-status Critical Current
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JP2006223961A 2005-08-31 2006-08-21 半導体装置及びその作製方法 Expired - Fee Related JP5121183B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006223961A JP5121183B2 (ja) 2005-08-31 2006-08-21 半導体装置及びその作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005252881 2005-08-31
JP2005252881 2005-08-31
JP2006223961A JP5121183B2 (ja) 2005-08-31 2006-08-21 半導体装置及びその作製方法

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP2012093976A Division JP5272092B2 (ja) 2005-08-31 2012-04-17 半導体装置及び電子機器
JP2012166823A Division JP5622804B2 (ja) 2005-08-31 2012-07-27 半導体装置
JP2012166760A Division JP5190552B2 (ja) 2005-08-31 2012-07-27 半導体装置及び電子機器

Publications (3)

Publication Number Publication Date
JP2007096276A JP2007096276A (ja) 2007-04-12
JP2007096276A5 true JP2007096276A5 (fr) 2009-09-17
JP5121183B2 JP5121183B2 (ja) 2013-01-16

Family

ID=37981540

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006223961A Expired - Fee Related JP5121183B2 (ja) 2005-08-31 2006-08-21 半導体装置及びその作製方法

Country Status (1)

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JP (1) JP5121183B2 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1760776B1 (fr) * 2005-08-31 2019-12-25 Semiconductor Energy Laboratory Co., Ltd. Procédé de fabrication d'un dispositif semi-conducteur avec substrat flexible
WO2009107548A1 (fr) * 2008-02-29 2009-09-03 Semiconductor Energy Laboratory Co., Ltd. Procédé de dépôt et procédé de fabrication de dispositif électroluminescent
EP2178133B1 (fr) * 2008-10-16 2019-09-18 Semiconductor Energy Laboratory Co., Ltd. Dispositif électroluminescent flexible, dispositif électronique et procédé de fabrication du dispositif électroluminescent flexible
US20100253902A1 (en) 2009-04-07 2010-10-07 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and manufacturing method thereof
KR101845480B1 (ko) * 2010-06-25 2018-04-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
JP5898949B2 (ja) * 2011-12-27 2016-04-06 パナソニック株式会社 フレキシブルデバイスの製造方法
TW202339281A (zh) * 2013-10-10 2023-10-01 日商半導體能源研究所股份有限公司 液晶顯示裝置
KR102632066B1 (ko) * 2015-07-30 2024-02-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치의 제작 방법, 발광 장치, 모듈, 및 전자 기기
JP6715708B2 (ja) * 2016-07-08 2020-07-01 株式会社ジャパンディスプレイ 表示装置
KR20230145548A (ko) * 2016-11-30 2023-10-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
US20200342282A1 (en) * 2018-02-13 2020-10-29 Panasonic Intellectual Property Management Co., Ltd. Semiconductor device and manufacturing method therefor
WO2019159614A1 (fr) * 2018-02-13 2019-08-22 パナソニックＩｐマネジメント株式会社 Dispositif à semi-conducteur de communication sans fil et son procédé de fabrication
CN112349839B (zh) * 2020-10-26 2022-11-01 东北师范大学 一种与光刻电极相兼容的本征可拉伸有机场效应晶体管及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002026282A (ja) * 2000-06-30 2002-01-25 Seiko Epson Corp 単純マトリクス型メモリ素子の製造方法
JP2003109773A (ja) * 2001-07-27 2003-04-11 Semiconductor Energy Lab Co Ltd 発光装置、半導体装置およびそれらの作製方法
JP2003323132A (ja) * 2002-04-30 2003-11-14 Sony Corp 薄膜デバイスの製造方法および半導体装置
JP2004349539A (ja) * 2003-05-23 2004-12-09 Seiko Epson Corp 積層体の剥離方法、積層体の製造方法、電気光学装置及び電子機器
JP4731893B2 (ja) * 2003-12-02 2011-07-27 株式会社半導体エネルギー研究所 発光装置の作製方法
JP2005229098A (ja) * 2003-12-12 2005-08-25 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法

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