JP5121183B2 - 半導体装置及びその作製方法 - Google Patents
半導体装置及びその作製方法 Download PDFInfo
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- JP5121183B2 JP5121183B2 JP2006223961A JP2006223961A JP5121183B2 JP 5121183 B2 JP5121183 B2 JP 5121183B2 JP 2006223961 A JP2006223961 A JP 2006223961A JP 2006223961 A JP2006223961 A JP 2006223961A JP 5121183 B2 JP5121183 B2 JP 5121183B2
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| JP2012166760A Division JP5190552B2 (ja) | 2005-08-31 | 2012-07-27 | 半導体装置及び電子機器 |
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| EP1760776B1 (fr) * | 2005-08-31 | 2019-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Procédé de fabrication d'un dispositif semi-conducteur avec substrat flexible |
| WO2009107548A1 (fr) * | 2008-02-29 | 2009-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Procédé de dépôt et procédé de fabrication de dispositif électroluminescent |
| EP2178133B1 (fr) * | 2008-10-16 | 2019-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Dispositif électroluminescent flexible, dispositif électronique et procédé de fabrication du dispositif électroluminescent flexible |
| US20100253902A1 (en) | 2009-04-07 | 2010-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and manufacturing method thereof |
| KR101845480B1 (ko) * | 2010-06-25 | 2018-04-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| JP5898949B2 (ja) * | 2011-12-27 | 2016-04-06 | パナソニック株式会社 | フレキシブルデバイスの製造方法 |
| TW202339281A (zh) * | 2013-10-10 | 2023-10-01 | 日商半導體能源研究所股份有限公司 | 液晶顯示裝置 |
| KR102632066B1 (ko) * | 2015-07-30 | 2024-02-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치의 제작 방법, 발광 장치, 모듈, 및 전자 기기 |
| JP6715708B2 (ja) * | 2016-07-08 | 2020-07-01 | 株式会社ジャパンディスプレイ | 表示装置 |
| KR20230145548A (ko) * | 2016-11-30 | 2023-10-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 전자 기기 |
| US20200342282A1 (en) * | 2018-02-13 | 2020-10-29 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device and manufacturing method therefor |
| WO2019159614A1 (fr) * | 2018-02-13 | 2019-08-22 | パナソニックＩｐマネジメント株式会社 | Dispositif à semi-conducteur de communication sans fil et son procédé de fabrication |
| CN112349839B (zh) * | 2020-10-26 | 2022-11-01 | 东北师范大学 | 一种与光刻电极相兼容的本征可拉伸有机场效应晶体管及其制备方法 |
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| JP2002026282A (ja) * | 2000-06-30 | 2002-01-25 | Seiko Epson Corp | 単純マトリクス型メモリ素子の製造方法 |
| JP2003109773A (ja) * | 2001-07-27 | 2003-04-11 | Semiconductor Energy Lab Co Ltd | 発光装置、半導体装置およびそれらの作製方法 |
| JP2003323132A (ja) * | 2002-04-30 | 2003-11-14 | Sony Corp | 薄膜デバイスの製造方法および半導体装置 |
| JP2004349539A (ja) * | 2003-05-23 | 2004-12-09 | Seiko Epson Corp | 積層体の剥離方法、積層体の製造方法、電気光学装置及び電子機器 |
| JP4731893B2 (ja) * | 2003-12-02 | 2011-07-27 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| JP2005229098A (ja) * | 2003-12-12 | 2005-08-25 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
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