JP2007084926A - Film forming apparatus, and film forming method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film forming apparatus and a film forming method that can easily control the film thickness in a film forming process. <P>SOLUTION: The film forming apparatus is constituted so that a film forming chamber 10 for forming a film is communicated with a measuring chamber 20 for measuring a thickness of the film, and respective internal pressures can be controlled. In such constitution, in a state in which the film forming chamber 10 and the measuring chamber 20 are evacuated, a substrate B moved between both chambers 10, 20, and both the film formation and the measurement can be repeated. Further, while the film is formed, the interruption between the film forming chamber 10 and the measuring chamber 20 is made. Accordingly, inside of the measuring chamber is maintained clean without being polluted with the aerosol, and the measurement precision can be maintained. Thus, in the film forming process, the film thickness can be easily and precisely measured to be fed back to the film forming condition. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a film forming apparatus and a film forming method, and more particularly to formation of a piezoelectric film in a piezoelectric actuator used for an inkjet head or the like.

For example, there is a method called an aerosol deposition method (AD method) as a manufacturing method of a piezoelectric actuator used for an ink jet head or the like. For example, in Patent Document 1 (Japanese Patent Application Laid-Open No. 2003-306762), an aerosol in which fine particles of a piezoelectric material are dispersed in a gas is generated in an aerosol chamber, and an aerosol chamber and a deposition chamber are decompressed by reducing the pressure in the deposition chamber. A method is disclosed in which aerosol is guided to an injection nozzle in a film forming chamber and is injected toward a substrate surface using a pressure difference between the substrate and the substrate. Thereby, the fine particles contained in the aerosol collide and deposit on the substrate to form a piezoelectric film.
JP 2003-306762 A

  By the way, when forming a thin film, it is difficult to completely control the film thickness, and the variation tends to increase especially as the film formation rate increases. Therefore, the initial conditions are set empirically, the film thickness is measured during the film formation, and the film thickness is controlled as needed by performing some parameter control based on the result.

  However, when adopting a method of performing a film formation process under reduced pressure, such as the above-described AD method, if the film thickness is to be measured during film formation, the inside of the film formation chamber is once returned to normal pressure. After the substrate is taken out and the film thickness is measured, the substrate is returned to the film forming chamber again, and an extremely complicated procedure is required for adjusting the internal pressure in the chamber. In order to solve this problem, it is conceivable to perform measurement while reducing the pressure inside the chamber using a non-contact measurement system. However, since the AD method is a method in which an aerosol containing fine particles is ejected to form a film, There is a problem that fine particles adhere to the inner wall of the chamber due to long-term use and the inside of the chamber becomes dirty and the measurement accuracy decreases.

  The present invention has been made in view of the above-described circumstances, and an object of the present invention is to provide a film forming apparatus and a film forming method capable of easily performing film thickness control in a film forming process. is there.

  A film forming apparatus according to the invention of claim 1 for solving the above-described problem is provided by forming a film forming chamber for forming a film and injecting an aerosol containing material particles toward the substrate in the film forming chamber. An injection mechanism for forming a film made of the material particles on the substrate, a measurement chamber communicated with the film formation chamber, a measurement mechanism for measuring the thickness of the film in the measurement chamber, the film formation chamber, A pressure adjusting mechanism connected to the measurement chamber to control the internal pressure of the film formation chamber and the measurement chamber; a conveyor for transferring the substrate between the film formation chamber and the measurement chamber; the film formation chamber; And a blocking unit that blocks the measurement chamber.

  The film forming apparatus of the present invention can be used to form a film of oxide ceramics such as alumina, zirconia, silica, mullite, etc., and in particular, lead zirconate titanate (PZT), lead magnesium niobate ( PMN) and the like can be suitably used for forming a piezoelectric film for a piezoelectric actuator. The substrate for forming the film is not particularly limited as long as it is normally applicable to film formation by the aerosol deposition method. For example, stainless steel (SUS430, SUS304, etc.), 42A alloy, alumina, zirconia, titanium The thing made from the thing etc. can be used.

  A second aspect of the present invention is the film forming apparatus according to the first aspect, wherein the measurement mechanism is of a non-contact type and is installed outside the measurement chamber.

  A third aspect of the present invention is the film forming apparatus according to the second aspect, wherein the measurement mechanism includes: a light projecting unit that emits light to the substrate; and a light receiving unit that receives reflected light from the substrate. It is an optical mechanism provided.

  A fourth aspect of the present invention is the film forming apparatus according to any one of the first to third aspects, wherein the film formation chamber and the measurement chamber are each connected to one pressure adjusting mechanism via a valve body. It has been done.

  A fifth aspect of the present invention is the film forming apparatus according to any one of the first to fourth aspects, wherein a carry-in / out port for the substrate is provided in the measurement chamber.

  A sixth aspect of the present invention is the film forming apparatus according to any one of the first to fifth aspects, wherein a plurality of the conveyors are provided.

  A seventh aspect of the invention is the film forming apparatus according to any one of the first to sixth aspects, wherein an intermediate chamber is provided between the film formation chamber and the measurement chamber. The intermediate chamber is provided with a cleaner for removing dirt on the substrate.

  The invention of claim 8 is the film forming apparatus according to claim 7, wherein the cleaner is a gas cleaner that removes dirt on the substrate by blowing gas onto the substrate, and the gas cleaner comprises: It also serves as a second pressure adjusting mechanism for adjusting the pressure of the film forming chamber or the measuring chamber communicating with the intermediate chamber by supplying gas to the intermediate chamber.

  A ninth aspect of the present invention is the film forming apparatus according to the eighth aspect, wherein the gas is the same type as the gas forming the aerosol.

  A tenth aspect of the present invention is the film forming apparatus according to any one of the seventh to ninth aspects, wherein the blocking portion is provided at two locations on the intermediate chamber and on the film formation chamber side and the measurement chamber side. It is provided.

  An eleventh aspect of the present invention is the film forming apparatus according to the tenth aspect, wherein the cleaner is installed between the two blocking portions in the intermediate chamber.

  A twelfth aspect of the invention is the film forming apparatus according to the tenth or eleventh aspect, wherein the intermediate chamber has an intermediate chamber pressure that controls an internal pressure of a space defined by the two blocking portions. An adjustment mechanism is installed.

  A thirteenth aspect of the present invention is the film forming apparatus according to any one of the first to twelfth aspects, wherein when the substrate is conveyed by the conveyor, the internal pressure of the measurement chamber is that of the film forming chamber. A pressure control unit that controls the pressure adjusting mechanism or the valve body so as to be higher than an internal pressure is provided.

  A fourteenth aspect of the present invention is the film forming apparatus according to any one of the fifth to thirteenth aspects, wherein the opening / closing portion provided in the measurement chamber opens and closes the carry-in / out port, and the unloading by the opening / closing portion. An open / close detection unit that detects an open / closed state of the entrance; and a shut-off control unit that shuts off the shut-off unit when the open / close detection unit detects that the carry-in / out port is open.

  A fifteenth aspect of the invention is the film forming apparatus according to any one of the tenth to fourteenth aspects, wherein the position detection unit is provided on the conveyor and detects the position of the substrate on the conveyor, When the position detecting unit detects that there is a substrate between the film forming chamber and the intermediate chamber, the blocking unit on the measurement chamber side is blocked and the blocking unit on the film forming chamber side is opened. A shut-off control unit that shuts off the shut-off unit on the film formation chamber side and opens the shut-off unit on the measurement chamber side when the detecting unit detects that there is a substrate between the measurement chamber and the intermediate chamber; It is to be prepared.

  The invention of claim 16 is the film forming apparatus according to any one of claims 1 to 15, wherein the thickness of the film measured by the measuring mechanism is smaller than a predetermined reference thickness. A determination unit that determines whether or not, an injection condition adjustment unit that adjusts an injection condition of the injection mechanism based on the thickness of the film measured by the measurement mechanism, and the thickness of the film is determined by the determination unit When it is determined that the thickness is smaller than a reference thickness, the substrate is transported from the measurement chamber to the film formation chamber by the conveyor, and the injection condition adjustment unit corresponds to the injection condition of the injection mechanism corresponding to the thickness of the film. And a device control unit that causes the spray mechanism to spray the aerosol onto the substrate transported to the film forming chamber according to the adjusted spray condition.

  The invention of claim 17 includes a film formation chamber for forming a film, an injection mechanism for injecting an aerosol containing material particles in the film formation chamber, a measurement chamber communicated with the film formation chamber, and the measurement chamber The film made of the material particles is formed on the substrate by a film forming apparatus including a measurement mechanism for measuring the thickness of the film formed on the substrate and a blocking unit that blocks between the film formation chamber and the measurement chamber. (A) a substrate carrying-in step of carrying the substrate into the film formation chamber; and (b) injecting aerosol from the injection mechanism in a state where the film formation chamber is shut off from the measurement chamber. A film forming step of forming the film on the substrate, and (c) a first step of moving the substrate from the film formation chamber to the measurement chamber in a state where the film formation chamber and the measurement chamber are depressurized. A substrate moving step, and (d) a film thickness measuring step for measuring the film thickness of the film; (e) a determination step of determining whether or not the film has reached a predetermined reference thickness based on a measurement result in the film thickness measurement step; and (f) the reference thickness of the film in the determination step. A re-forming step of re-forming the film when it is determined that the measurement chamber is smaller than (g) from the measurement chamber in a state where the film formation chamber and the measurement chamber are decompressed. A second substrate moving step of moving the substrate to the film forming chamber; (h) an adjusting step of adjusting the setting of the film forming conditions in the film forming step based on the measurement result in the film thickness measuring step; And a step of performing the steps (b) to (e) again.

  In the present invention, the adjustment process may be performed before or after the substrate movement process.

  The invention according to claim 18 is the film forming method according to claim 17, wherein, in the determination configuration, when the film is equal to or larger than the reference thickness, the determination step is replaced with the re-forming step ( j) includes a substrate unloading step of unloading the substrate from the measurement chamber.

  A nineteenth aspect of the invention is the film forming method according to the seventeenth or eighteenth aspect, wherein in the first substrate moving step and the second substrate moving step, the internal pressure of the measurement chamber is set to the film forming amount. This is higher than the internal pressure of the chamber.

  A twentieth aspect of the present invention is the film forming method according to any one of the seventeenth to nineteenth aspects, wherein the measurement chamber is provided with a loading / unloading port for loading / unloading the substrate into / from the apparatus. In the process, the substrate is carried in from the carry-in / out port in a state where the film-forming chamber is cut off from the measurement chamber, and the substrate is further moved from the measurement chamber to the film-forming chamber.

  A twenty-first aspect of the invention is the film forming method according to any one of the seventeenth to twentieth aspects, wherein an intermediate chamber is provided between the film formation chamber and the measurement chamber to communicate the two chambers. In this intermediate chamber, a blocking portion is provided at two locations on the film formation chamber side and the measurement chamber side, and after the substrate carrying-in step, in the first substrate moving step and the second substrate moving step, When the substrate is moved between the film chamber and the intermediate chamber, the blocking portion on the film formation chamber side is opened with the blocking portion on the measurement chamber side closed, and the measurement chamber, the intermediate chamber, When the substrate is moved between the measurement chambers, the blocking unit on the measurement chamber side is opened with the blocking unit on the film forming chamber side closed.

  According to a twenty-second aspect of the present invention, there is provided a film forming chamber for forming a film, an injection mechanism for injecting an aerosol containing particles of piezoelectric material in the film forming chamber, a measurement chamber communicated with the film forming chamber, Particles of the piezoelectric material on a substrate by a film forming apparatus comprising: a measurement mechanism for measuring the thickness of a film formed in the measurement chamber; and a blocking unit that blocks between the film formation chamber and the previous measurement chamber. A piezoelectric actuator manufacturing method for forming a piezoelectric film comprising: (a) a substrate carrying-in step for carrying the substrate into the film-forming chamber; and (b) a state in which the film-forming chamber is shut off from the measurement chamber. A piezoelectric film forming step of forming the piezoelectric film on the substrate by injecting aerosol from the injection mechanism; and (c) the film formation chamber and the measurement chamber are decompressed from the film formation chamber, A first substrate transfer that moves the substrate to the measurement chamber. And (d) a film thickness measurement process for measuring the film thickness of the piezoelectric film; and (e) whether or not the film has reached a predetermined reference thickness based on a measurement result in the film thickness measurement process. A determination step of determining whether or not (f) a re-forming step of re-forming the film when it is determined that the piezoelectric film is smaller than the reference thickness in the determination step; A substrate unloading step of unloading the substrate from the measurement chamber when it is determined that the film is equal to or greater than the reference thickness, and the re-forming step includes (g) the film formation chamber and the measurement chamber A second substrate moving step of moving the substrate from the measurement chamber to the film formation chamber in a reduced pressure state, and (h) a film formation condition in the film formation step based on a measurement result in the film thickness measurement step. An adjustment step for adjusting the settings, and (i) the steps (b) to (e) are executed again. And the extent, is intended to include.

  According to the first aspect of the present invention, the film formation chamber for film formation and the measurement chamber for measuring the film thickness are communicated with each other, and the internal pressure can be controlled. According to such a configuration, it is possible to repeatedly perform film formation and measurement by moving the substrate back and forth between both chambers in a state where the inside of the film formation chamber and the measurement chamber is decompressed. In addition, film formation and measurement are performed in separate chambers, and when film formation is performed, the space between the film formation chamber and the measurement chamber can be shut off. By avoiding contamination, the measurement chamber can be kept clean and measurement accuracy can be maintained. As a result, the film thickness can be measured easily and accurately during the film forming process, and feedback to the film forming conditions can be performed.

  According to the second and third aspects of the present invention, a contacted type, for example, an optical mechanism is used as the measurement mechanism, and the measurement mechanism is installed outside the measurement chamber. According to such a configuration, the film thickness on the substrate in the measurement chamber can be measured by operating the measurement mechanism from the outside of the measurement chamber. Therefore, the operation of returning the measurement chamber to normal pressure so that the operator enters the measurement chamber every time measurement is not required, so that the film forming process can be further simplified.

  According to the invention of claim 4, even if the pressure adjusting mechanism is not separately provided in the film forming chamber and the measuring chamber, the internal pressures of both can be individually adjusted by one pressure adjusting mechanism by opening and closing the valve body. For this reason, cost can be reduced.

  According to the invention of claim 5, a substrate carry-in / out port is provided in the measurement chamber. Here, in the AD method, the aerosol is guided into the film forming chamber by the pressure difference between the aerosol chamber for generating the aerosol and the film forming chamber, and the pressure fluctuation in the film forming chamber affects the film forming. give. However, according to the invention of this claim, when the substrate is carried in and out, it is only necessary to return the internal pressure of the measurement chamber to the normal pressure, and the film formation chamber can always be kept in a reduced pressure state. Fluctuations can be minimized.

  According to the invention of claim 6, a plurality of conveyors are provided. According to such a configuration, for example, at the same time as forming a film on one substrate in the film forming chamber, the film thickness of another substrate is measured in the measuring chamber, and then both the substrates are simultaneously replaced by a plurality of conveyors. A film forming process for a plurality of substrates can be performed simultaneously, such as measuring the film thickness of one substrate in the measurement chamber and simultaneously forming a film on another substrate in the film forming chamber. Thereby, the improvement of production efficiency can be aimed at.

  According to the seventh aspect of the present invention, the intermediate chamber provided between the film formation chamber and the measurement chamber is provided with a cleaner for removing dirt such as excess particles adhering to the substrate. According to such a configuration, the material particles can be prevented from being brought into the measurement chamber along with the transport of the substrate, and the measurement chamber can be kept clean. Thereby, measurement accuracy can be maintained.

  According to the eighth aspect of the present invention, the cleaner is a gas cleaner that removes dirt on the substrate by blowing gas onto the substrate, and the gas communicates with the intermediate chamber by supplying gas to the intermediate chamber. The configuration of the film forming apparatus can be simplified by combining the role of the second pressure adjustment for adjusting the pressure of the film forming chamber or the measurement chamber.

  According to the ninth aspect of the present invention, since the gas blown by the gas cleaner is the same type as the gas forming the aerosol, it is possible to remove and measure dirt in an atmosphere close to the time of film formation. Sometimes, the newly formed surface caused by the cracking of the powder can be maintained in a state close to the newly formed state until the re-deposition, and the re-deposition can be performed well.

  According to the tenth and twenty-first aspects of the present invention, the blocking portions are provided at two locations in the intermediate chamber, that is, the film forming chamber side and the measuring chamber side. And when one interruption | blocking part is open | released, what is necessary is just to make it close the other interruption | blocking part. Accordingly, it is possible to prevent the material particles floating in the film formation chamber from flowing into the measurement chamber due to a difference in internal pressure between the film formation chamber and the measurement chamber, and the like, thereby contaminating the inside of the measurement chamber.

  According to the eleventh aspect of the present invention, a cleaner is installed between the two blocking portions in the intermediate chamber. According to such a structure, when performing the removal operation | work of the excess material particle etc. which adhered to the board | substrate, it can carry out in the state which closed the two interruption | blocking parts. In this way, it is possible to avoid fluctuations in the internal pressure of the intermediate chamber during the removal operation and material particles removed from the substrate from adversely affecting film formation and measurement.

  According to the invention of claim 12, the intermediate chamber is provided with the intermediate chamber pressure adjusting mechanism. According to such a configuration, when the substrate is moved between the film formation chamber and the intermediate chamber, the internal pressure of the intermediate chamber is adjusted to the film formation chamber side with the shut-off portion on the measurement chamber side closed. The substrate may be moved by opening the blocking portion on the deposition chamber side. On the other hand, when the substrate is moved between the measurement chamber and the intermediate chamber, the internal pressure of the intermediate chamber is adjusted to the measurement chamber side with the blocking portion on the film formation chamber side closed, and the blocking portion on the measurement chamber side is Open it. As described above, a relatively narrow space is required as compared with the film formation chamber and the measurement chamber, and the substrate can be moved only by changing the internal pressure of the intermediate chamber in which the internal pressure can be easily adjusted.

  According to the inventions of claims 13, 14 and 15, it is possible to automate the pressure adjustment between the film forming chamber and the measuring chamber when the substrate is carried in and out or moved between the film forming chamber and the measuring chamber. it can.

  According to the invention of claim 16, when the film thickness measured by the measurement mechanism is smaller than the reference thickness, the film formation condition (the injection condition of the injection mechanism) is set based on the measurement result of the film thickness. After the adjustment, the film can be formed again. Therefore, it is possible to perform film formation for making up for the shortage of film thickness with high accuracy.

  According to the invention of claim 18, the film is formed again, such as when a film having a desired thickness has already been formed or when a film exceeding the desired thickness is formed and repair is difficult. When it is not necessary to carry out the process, the substrate is carried out of the measurement chamber, so that it is possible to immediately shift to a post-deposition process without performing an extra process. Therefore, film formation can be performed quickly.

  According to the nineteenth aspect of the invention, when the substrate is moved, the internal pressure of the measurement chamber is set higher than the internal pressure of the film forming chamber. As a result, it is possible to prevent material particles floating in the film formation chamber from flowing into the measurement chamber and contaminating the inside of the measurement chamber, and to keep the measurement chamber clean, thus maintaining measurement accuracy. Can do.

  According to the twentieth aspect of the invention, when the substrate is carried into the measurement chamber from the carry-in / out opening, the film formation chamber is shut off from the measurement chamber. Can be taken in. Therefore, it can transfer to a subsequent film-forming process immediately, and film formation can be performed rapidly.

  According to the invention of claim 17 and claim 22, the film formation chamber for film formation and the measurement chamber for measuring the film thickness are communicated with each other, and the internal pressure can be controlled respectively. Then, in a state where the insides of the film formation chamber and the measurement chamber are decompressed, the substrate is moved back and forth between the two chambers, and film formation and measurement are repeated. In addition, film formation and measurement are performed in separate chambers, and when film formation is performed, the space between the film formation chamber and the measurement chamber can be shut off. By avoiding contamination, the measurement chamber can be kept clean and measurement accuracy can be maintained. As a result, the film thickness can be measured easily and accurately during the film forming process, and feedback to the film forming conditions can be performed. Thereby, a film having a uniform thickness and a piezoelectric actuator having a uniform film thickness and good piezoelectric characteristics can be easily manufactured.

<First Embodiment>
Hereinafter, a first embodiment of the present invention will be described in detail with reference to FIGS. FIG. 1 shows an overall schematic diagram of a film forming apparatus 1 of the present invention, and FIG. 2 shows a block diagram of the film forming apparatus 1. The film forming apparatus 1 is provided between a film forming chamber 10 for forming a film, a measuring chamber 20 for measuring the thickness of the formed film, and the film forming chamber 10 and the measuring chamber 20. An intermediate chamber 30 communicating both chambers 10 and 20, and a host computer C for automatically controlling the operation of the film forming apparatus 1 (corresponding to the pressure control section, the shutoff control section, and the apparatus control section of the present invention). And.

  The film formation chamber 10 is for forming a thin film of material particles M on the substrate B by spraying the aerosol Z toward the substrate B and attaching the material particles M contained in the aerosol Z to the substrate B. is there. Inside the film forming chamber 10, a stage 11 for placing the substrate B is installed. An injection nozzle 12 for injecting the aerosol Z is installed above the stage 11 with the injection port directed toward the stage 11 side.

  The spray nozzle 12 is movable relative to the stage 11 by a traverse mechanism (not shown), and the spray nozzle 12 can scan a desired path on the substrate B placed on the stage 11. ing. Thereby, the injection nozzle 12 can inject the aerosol Z toward a desired position on the substrate B.

  This injection nozzle 12 is connected to an aerosol generator 13. The aerosol generator 13 includes an aerosol chamber 14 that can accommodate material particles M therein, and a vibration device 15 that is attached to the aerosol chamber 14 and vibrates the aerosol chamber 14. A gas cylinder G for introducing a carrier gas is connected to the aerosol chamber 14 via an introduction pipe 16. The leading end of the introduction tube 16 is located near the bottom surface in the aerosol chamber 14 and is buried in the material particles M. As the carrier gas, for example, an inert gas such as helium, argon, or nitrogen, air, oxygen, or the like can be used.

  The aerosol chamber 14 is connected to the injection nozzle 12 through an aerosol supply pipe 17, and the aerosol Z generated in the aerosol chamber 14 is injected from the injection nozzle 12 through the aerosol supply pipe 17. ing. The injection nozzle 12, the aerosol generator 13, the gas cylinder G, the traverse mechanism, and the like described above, and the vacuum pump P that generates a differential pressure between the film formation chamber 10 and the aerosol chamber 14 described later correspond to the injection mechanism of the present invention. To do.

  On the other hand, the measurement chamber 20 is for measuring thickness unevenness and the like of the thin film formed on the substrate B in the film formation chamber 10 and is connected to the film formation chamber 10 through an intermediate chamber 30 described later. ing. Inside the measurement chamber 20, a measurement table 21 for placing the substrate B is installed. A window 22 is provided in the ceiling of the measurement chamber 20, and a laser interferometer 23 that is an optical measurement mechanism is installed above the window 22. The window portion 22 is fitted with a light-transmitting glass plate so that light emitted from the laser interferometer 23 and light reflected from the substrate B can be transmitted. Accordingly, the film formed on the substrate B can be measured by the laser interferometer 23 installed outside the measurement chamber 20.

  Between the film formation chamber 10 and the measurement chamber 20, there is provided an elongated rectangular tube-shaped intermediate chamber 30 that connects the two. The intermediate chamber 30 is provided with a gate valve 31 (corresponding to the shut-off portion of the present invention). By opening and closing the gate valve 31, the film forming chamber 10 and the measurement chamber 20 are communicated or shut off. Can be done. Between the stage 11 installed in the film formation chamber 10 and the measurement table 21 installed in the measurement chamber 20, a belt conveyor 32 (for passing the intermediate chamber 30 and transferring the substrate B between them) ( (Corresponding to the conveyor of the present invention).

  As shown in FIG. 3, the belt conveyor 32 includes an upstream belt conveyor 32A for transporting the substrate B from the measurement chamber 20 side (upper left in FIG. 3) to the film formation chamber 10 side (lower right in FIG. 3). Two rows of the downstream belt conveyor 32B that conveys the substrate B from the film formation chamber 10 side to the measurement chamber 20 side are provided in parallel, whereby the two substrates are separated from the film formation chamber 10 and the measurement chamber. It can be exchanged with 20 at a time. Therefore, for example, after forming a film on one substrate B in the film formation chamber 10 and measuring the film thickness of another substrate B in the measurement chamber 20, both substrates B are conveyed by two rows of belt conveyors 32A and 32B. The film formation process of two substrates B is performed such that the film thickness of one substrate B is measured in the measurement chamber 20 and the other substrate B is formed in the film formation chamber 10 at the same time. Can be performed simultaneously. Thereby, the improvement of production efficiency can be aimed at.

  The belt conveyors 32A and 32B in each row are divided into a film forming chamber side conveyor 33A and a measurement chamber side conveyor 33B with the gate valve 31 as a boundary. When the gate valve 31 is closed, both conveyors 33A are separated. , 33B, a valve plate (not shown) of the gate valve 31 enters. Thus, when the gate valve 31 is closed, the presence of the belt conveyor 32 becomes an obstacle and the shielding property is not impaired.

  A delivery mechanism 34 for delivering the substrate B between the conveyors 33A and 33B is provided between the film forming chamber conveyor 33A and the measurement chamber conveyor 33B. This delivery mechanism 34 is the opposite side of the conveyors 33A and 33B on the upstream side in the traveling direction (in the upstream belt conveyor 32A, the measurement chamber side conveyor 33B, and in the downstream belt conveyor 32B, the film forming chamber side conveyor 33A). In the vicinity of the end portion on the side facing the conveyors 33A and 33B, a pair of cylinder portions 35 are provided on both sides. The cylinder portion 35 includes a cylinder tube 36 and a piston rod 37 which is accommodated in the cylinder tube 36 and protrudes toward the mating conveyors 33A and 33B. The piston rod 37 is driven.

  The substrate B is transported in a state where it is placed on a work table 38 that is formed to be slightly wider than the belt width of the belt conveyor 32. When the substrate B is transferred between the conveyors 33A and 33B, both side edges of the work table 38, that is, portions protruding from the belt of the belt conveyor 32 to the side are lowered by the piston rod 37 of the cylinder portion 35. Supported from the side. In this state, when the piston rod 37 is driven toward the counterpart conveyors 33A and 33B, the work table 38 supported by the piston rod 37 is passed between the conveyors 33A and 33B.

  In the intermediate chamber 30, a cleaner 39 (corresponding to the cleaner and the second pressure adjusting mechanism of the present invention) for removing dust from the substrate B is provided at a position closer to the measurement chamber 20 than the gate valve 31. ing. This cleaner 39 is of an air blow type, and blows a purge gas from a blowing nozzle 39A provided above the belt conveyor 32 toward the substrate B conveyed on the belt conveyor 32. The purge gas is the same gas as the carrier gas that forms the aerosol Z. As a result, surplus material particles M adhering to the substrate B during film formation are removed.

  The film formation chamber 10 and the measurement chamber 20 are each connected to a vacuum pump P through an exhaust pipe 40. One end of the exhaust pipe 40 is connected to a vacuum pump P (corresponding to the pressure adjusting mechanism of the present invention), and the other end is bifurcated and connected to the film forming chamber 10 and the measuring chamber 20, respectively. Yes. Pressure control valves 41A and 41B (corresponding to the valve body of the present invention) are provided in the branched branch pipe portions 40A and 40B, respectively. Then, by controlling the opening and closing of the pressure regulating valves 41A and 41B and the gate valve 31 provided in the intermediate chamber 30, the internal pressures of the film forming chamber 10 and the measuring chamber 20 are individually controlled by one vacuum pump P. It can be adjusted.

  The measurement chamber 20 is provided with a carry-in / out port 24 so that the substrate B is carried into and out of the film forming apparatus 1 from the measurement chamber 20 side. The loading / unloading port 24 is provided with a door 25 so that the loading / unloading port 24 can be closed as necessary. The carry-in / out port 24 is provided with an open / close detection sensor 26 (corresponding to the open / close detection unit of the present invention) that detects the open / closed state of the carry-in / out port 24 by the door 25. Information on the opening / closing state of the carry-in / out port 24 obtained by the open / close detection sensor 26 is sent to the host computer C, and is controlled by the host computer C so that the gate valve 31 is always closed when the carry-in / out port 24 is in the open state. Is made. Thereby, when the inside of the measurement chamber 20 is set to normal pressure, the measurement chamber 20 and the film formation chamber 10 are shut off, and the inside of the film formation chamber 10 is always kept in a reduced pressure state. The aerosol Z ejection speed is determined by the pressure difference between the depressurized film formation chamber 10 and the pressurized aerosol chamber 14. Therefore, by reducing the pressure fluctuation in the film formation chamber 10 as much as possible, This increases the efficiency of the film process and suppresses unintended fluctuations in the film formation conditions.

  Next, the procedure for forming a film by the film forming apparatus 1 configured as described above will be described with reference to the film forming process diagrams of FIGS. 4 to 6 and the flowchart of FIG. The operation of the film forming apparatus 1 described below is automatically controlled by a program stored in the host computer C.

  First, as shown in FIG. 4A, with the pressure adjustment valve 41A on the film formation chamber side opened and the pressure adjustment valve 41B on the measurement chamber side and the gate valve 31 closed, the vacuum pump P is activated to form the film. The inside of the chamber 10 is depressurized until it is almost in a vacuum state.

  Next, when the substrate B is transferred to the carry-in / out port 24 of the measurement chamber 20 by the external transfer line L, the carry-in / out port 24 is opened. Then, the substrate B is carried into the measurement chamber 20 from the open carry-in / out opening 24. At this time, the open / close detection sensor 26 detects that the carry-in / out port 24 is open, and sends this information to the host computer C. Based on this information, the host computer C performs control so that the gate valve 31 is not opened while the carry-in / out port 24 is opened, so that the film forming chamber 10 is kept in a reduced pressure state. .

  After loading the substrate B, the loading / unloading port 24 is closed by the door portion 25. Then, the pressure adjustment valve 41B on the measurement chamber side is opened, and the pressure in the measurement chamber 20 is reduced until it becomes almost vacuum. After depressurization, the pressure adjustment valve 41B is closed.

  Next, the cleaner 39 is turned on to supply the purge gas into the intermediate chamber 30. In this state, as shown in FIG. 4B, the gate valve 31 is opened, the belt conveyor 32 is driven, and the substrate B is transferred to the film forming chamber 10. The process until the substrate B loaded from the loading / unloading port 24 of the measurement chamber 20 is transferred to the film forming chamber 10 is referred to as a substrate loading process (step S1). At this time, the pressure adjustment valve 41A is opened on the film formation chamber 10 side, and the gas supplied from the cleaner 39 is exhausted by the vacuum pump P, but the pressure adjustment valve 41B is not opened on the measurement chamber 20 side. No exhaust. Accordingly, the internal pressure of the measurement chamber 20 becomes higher than the internal pressure of the film formation chamber 10, and the air flow in the film formation apparatus 1 always moves from the measurement chamber 20 side to the film formation chamber 10 side. This prevents the aerosol and material particles M in the film forming chamber 10 from flowing into the measurement chamber 20.

  That is, the film formation in the film forming chamber 10 is performed by spraying the aerosol Z toward the substrate B and attaching the material particles M contained in the aerosol Z to the substrate B. The inside of the film forming chamber 10 may be considerably contaminated due to floating or material particles M adhering to the inner wall. Therefore, in order to prevent the contamination from flowing into the measurement chamber 20 and contaminating the inside of the measurement chamber 20 and to keep the inside of the measurement chamber 20 clean, the internal pressure of the measurement chamber 20 is set higher than the internal pressure of the film formation chamber 10. Make it high. Thereby, measurement accuracy can be maintained.

  The substrate B carried into the film forming chamber 10 is set on the stage 11. When the transfer of the substrate B is completed, the gate valve 31 is closed and the cleaner 39 is turned off. Further, since the internal pressure of the measurement chamber 20 is increased during the transfer of the substrate B, the pressure adjustment valve 41B on the measurement chamber side is opened, and the inside of the measurement chamber 20 is reduced to a pressure substantially equal to the internal pressure of the film formation chamber 10. After the adjustment, the pressure adjustment valve 41B is closed.

  Subsequently, film formation is performed as shown in FIG. 5A. First, the material particles M are introduced into the aerosol chamber 14. Then, a carrier gas is introduced from the gas cylinder G, and the material particles M are caused to rise by the gas pressure. At the same time, the aerosol chamber 14 is vibrated by the vibration device 15 to mix the material particles M and the carrier gas to generate the aerosol Z. Then, due to the pressure difference between the aerosol chamber 14 and the film forming chamber 10, the aerosol Z in the aerosol chamber 14 is ejected from the ejection nozzle 12 while being accelerated at a high speed. The material particles M contained in the sprayed aerosol Z collide with the substrate B and deposit to form a film (film forming process or piezoelectric film forming process; step S2).

  After film formation, as shown in FIG. 5B, the substrate B is moved from the film formation chamber 10 to the measurement chamber 20 (first substrate movement step; step S3). First, the cleaner 39 is turned on to supply the purge gas into the intermediate chamber 30. In this state, the gate valve 31 is opened, the belt conveyor 32 is driven, and the substrate B is conveyed to the measurement chamber 20. Then, when the substrate B passes below the cleaner 39, a purge gas supplied from the cleaner 39 is blown onto the substrate B to clean the substrate B. This prevents surplus material particles M from adhering to the substrate B and being carried into the measurement chamber 20 to contaminate the inside of the measurement chamber 20.

  Similarly to the substrate loading step S1, the pressure adjustment valve 41A is opened on the film forming chamber 10 side, and the gas supplied from the cleaner 39 is exhausted by the vacuum pump P. Since the pressure adjustment valve 41B is not opened, no exhaust is performed. Accordingly, the internal pressure of the measurement chamber 20 becomes higher than the internal pressure of the film formation chamber 10, and the air flow in the film formation apparatus 1 always moves from the measurement chamber 20 side to the film formation chamber 10 side. This prevents the aerosol and material particles M in the film forming chamber 10 from flowing into the measurement chamber 20.

  At this time, the intermediate chamber 30 and the measurement chamber 20 are filled with the purge gas. Since the purge gas is the same gas as the carrier gas forming the aerosol Z, the intermediate chamber 30 and the measurement chamber 20 are filled. Is an atmosphere close to the film formation chamber 10 during film formation. Accordingly, the movement of the substrate B between the film formation chamber 10 and the measurement chamber 20 and the measurement of the film performed in the film formation chamber 20 described later can be performed in an atmosphere close to the time of film formation. If the film formation step S2 is performed again, the re-film formation can be performed satisfactorily.

  That is, in the film forming step S2, the material particles M that collide with the substrate B are cracked, and a new surface with high adhesion is exposed, but the process up to the re-deposition is performed in an atmosphere close to the film forming chamber 10. Therefore, the exposed new surface can be maintained in a state close to new life.

  Furthermore, two rows of belt conveyors 32 are installed in the film forming apparatus 1 of the present embodiment. Therefore, a substrate (not shown) to be processed next is carried into the measurement chamber 20 in advance, and simultaneously with the movement of the substrate B from the film formation chamber 10 to the measurement chamber 20, the film formation from the measurement chamber 20 is performed. It may be moved to the chamber 10 (see also FIG. 3). In this way, it is possible to form the next substrate while measuring the film thickness distribution of the film formed on the previous substrate B in the next film thickness measurement step. As a result, two substrates can be processed simultaneously, leading to a shortening of the manufacturing process.

  The substrate B carried into the measurement chamber 20 is set on the measurement table 21. When the transfer of the substrate B is completed, the gate valve 31 is closed and the cleaner 39 is turned off. In addition, since the internal pressure of the measurement chamber 20 is high in the first substrate moving step S3, the pressure adjustment valve 41B on the measurement chamber side is opened, and the internal pressure of the measurement chamber 20 becomes substantially equal to the internal pressure of the film forming chamber 10. Adjust until. After the adjustment, the pressure adjustment valve 41B is closed.

  Subsequently, as shown in FIG. 6, the film thickness distribution of the film formed in the film forming process is measured (film thickness measuring process; step S4). When the laser interferometer 23 is operated, the light emitted from a light source (not shown) provided in the light projecting / receiving unit 23A (corresponding to the light projecting unit and the light receiving unit of the present invention) The light passes through the light-transmitting glass plate fitted in 22 and reaches the surface of the substrate B installed in the measurement chamber 20. The light that has reached the substrate B is reflected by the film formed on the substrate B, passes through the glass plate fitted in the window 22 of the measurement chamber 20 again, and is provided with a CCD camera ( (Not shown).

  As described above, the laser interferometer 23 which is a contact-type optical mechanism is used as the measurement mechanism, and the laser interferometer 23 is installed outside the measurement chamber 20. Further, a window portion 22 in which a light-transmitting glass plate is fitted is provided on the ceiling portion of the measurement chamber 20, and emitted light from the laser interferometer 23 can be irradiated into the measurement chamber 20 from the window portion 22. It is like that. Thereby, the laser interferometer 23 can be operated from the outside of the measurement chamber 20 to measure the film thickness on the substrate B inside. Therefore, it is not necessary to open and close the measurement chamber 20 for adjustment of measurement conditions, maintenance of the laser interferometer 23, etc., and the laser interferometer 23 can be operated while the measurement chamber 20 is kept under reduced pressure.

  In addition, film formation and measurement are performed in separate chambers, and the film formation chamber 10 and the measurement chamber 20 can be shut off when film formation is performed. In addition, a cleaner 39 is provided between the film formation chamber 10 and the measurement chamber 20, and the substrate B transported from the film formation chamber 10 is carried into the measurement chamber 20 in a cleaned state. Thereby, the inside of the measurement chamber 20 can be avoided from being contaminated by the aerosol Z, and the measurement accuracy can be maintained.

  The data of the reflected light received by the CCD camera is sent to the host computer C, and the film surface state is analyzed.

  If the substrate to be processed next is moved to the film forming chamber 10 in the first substrate moving step S3, the film forming chamber 10 is moved while the film thickness measuring step S4 is being performed. Film formation on the carried substrate is also performed.

  When the measurement is completed, the host computer C (determination unit of the present invention) determines whether or not a film having a predetermined reference thickness has been formed based on the transmitted data (determination step; step S5). ). When it is determined that the film has a reference thickness, or when it is determined that the film has a thickness larger than the reference thickness, the film formation is finished and the gate valve 31 is closed. Then, the carry-in / out opening 24 is opened, and the substrate B is carried out from the measurement chamber 20 (substrate carry-out step; step S6). At this time, the inside of the measurement chamber 20 is returned to the normal pressure state which is the same as the external pressure, but since the gate valve 31 is closed, the inside of the film forming chamber 10 is kept in a reduced pressure state. Similarly to when the substrate B is carried into the measurement chamber 20, the open / close detection sensor 26 detects that the carry-in / out port 24 is open, and sends this information to the host computer C. Based on this information, the host computer C performs control so that the gate valve 31 is not opened while the carry-in / out port 24 is opened.

  In this way, the loading / unloading port 24 for the substrate B is provided in the measurement chamber 20, and the space between the measurement chamber 20 and the film formation chamber 10 is closed by the gate valve 31, so that only the internal pressure of the measurement chamber 20 is taken when the substrate B is unloaded. Can be returned to normal pressure, and fluctuations in film forming conditions can be minimized. At this time, a new substrate (not shown) can be loaded simultaneously with the unloading of the substrate B after film formation, and the film formation on the new substrate can be subsequently performed. In the determination step S5, the substrate B for which it is determined that the formed film has the reference thickness is processed as a defective substrate in which film formation has failed after the substrate carry-out step S6.

  On the other hand, if it is determined that the film is less than the reference thickness, the substrate B is moved again to the film forming chamber 10 (second substrate moving step; step S7). That is, the purge gas is supplied into the intermediate chamber 30 by turning on the cleaner 39 as in the substrate loading step S1. In this state, the gate valve 31 is opened and the belt conveyor 32 is driven to transport the substrate B to the film forming chamber 10 (FIG. 4B). At this time, the internal pressure of the measurement chamber 20 is made higher than the internal pressure of the film forming chamber 10 by the purge gas supplied from the cleaner 39, as in the substrate carry-in step S1 and the first substrate movement step S3. Thereby, contamination inside the measurement chamber 20 is prevented.

  In addition, when the film formation of the next substrate is performed in the film formation chamber 10 simultaneously with the previous film thickness measurement, the substrate B is moved to the measurement chamber 20 after the film formation is completed.

  When the transfer of the substrate B is completed, the gate valve 31 is closed and the cleaner 39 is turned off. The substrate B carried into the film forming chamber 10 is set on the stage 11.

  When the substrate B is set on the stage, the host computer C (the injection condition adjusting unit of the present invention) adjusts the film forming conditions according to the analysis result in the previous film thickness measuring step S4 (adjusting step; step S8). . For example, the spraying conditions (film forming conditions) such as the scanning path of the spray nozzle 12 and the spray amount of the aerosol Z are adjusted so that the material particles M are thickly attached to the region where the film thickness is thin. Thereafter, the film formation step S2 is performed again according to the adjusted film formation conditions (FIG. 5A). Thereby, the variation in film thickness in the first film formation step S2 is eliminated.

  When film formation is completed, the substrate B is transferred again to the measurement chamber 20 (FIG. 5B), and the film thickness is measured (FIG. 6). In this manner, the substrate B is reciprocated between the film formation chamber 10 and the measurement chamber 20 until the film has a desired thickness, and film formation and measurement are repeated.

  As described above, according to the present embodiment, the film formation chamber 10 for film formation and the measurement chamber 20 for measuring the film thickness are communicated, and the internal pressure can be controlled respectively. According to such a configuration, the substrate B can be moved back and forth between the chambers 10 and 20 while the insides of the film forming chamber 10 and the measurement chamber 20 are decompressed, and film formation and measurement can be performed repeatedly. Further, the film formation and the measurement are performed in separate chambers, and when the film formation is performed, the film formation chamber 10 and the measurement chamber 20 can be shut off. Is prevented from being polluted by aerosol, the measurement chamber can be kept clean, and the measurement accuracy can be maintained. As a result, the film thickness can be measured easily and accurately during the film forming process, and feedback to the film forming conditions can be performed.

  When using the film forming apparatus 1 of the present embodiment and using piezoelectric material particles as the material particles M to manufacture a piezoelectric actuator, for example, the substrate B is made of metal so that it can be used as one electrode, and the piezoelectric actuator is used. Another electrode may be formed on the piezoelectric film formed of the material particles. According to this, a piezoelectric actuator having a uniform piezoelectric film thickness and excellent piezoelectric characteristics can be easily manufactured.

  In the substrate carrying-in process (S1), the first substrate moving process (S3), and the second substrate moving process (S7) of the present embodiment, the internal pressure of the film forming chamber 10 is always lower than the internal pressure of the measuring chamber 20. Since the state is maintained, the air flow in the film forming apparatus 1 is directed from the measurement chamber 20 side to the film forming chamber 10 side. That is, the measurement chamber 20 is always provided upstream of the film formation chamber 10.

Second Embodiment
Hereinafter, a second embodiment of the present invention will be described with reference to FIGS. The main difference between the present embodiment and the first embodiment is that the gate valve 61 is provided at two locations on the intermediate chamber 60 on the film formation chamber side and the measurement chamber side. In addition, the same code | symbol is attached | subjected to the structure similar to 1st Embodiment, and description is abbreviate | omitted.

  FIG. 8 is an overall schematic diagram of the film forming apparatus 50, and FIG. 9 is a block diagram of the film forming apparatus 50. As in the first embodiment, the film forming apparatus 50 includes a film forming chamber 10 for forming a film, a measurement chamber 20 for measuring the thickness of the formed film, and an operation of the film forming apparatus 50. And a host computer C for automatically controlling.

  Between the film formation chamber 10 and the measurement chamber 20, an elongated rectangular tube-shaped intermediate chamber 60 that connects the two is provided. In the intermediate chamber 60, gate valves 61A and 61B are provided at two locations on the film formation chamber side and the measurement chamber side. In the intermediate chamber 60, a space between the two gate valves 61A and 61B is a cleaning chamber 60A for removing dust from the substrate B. Here, a cleaner having the same configuration as that of the first embodiment is used. 39 is provided. By opening and closing the two gate valves 61A and 61B, the film formation chamber 10 and the cleaning chamber 60A, and the cleaning chamber 60A and the measurement chamber 20 can be communicated with each other or blocked.

  Further, between the stage 11 installed in the film formation chamber 10 and the measurement table 21 installed in the measurement chamber 20, as in the first embodiment, the intermediate chamber 60 is passed between the two. A belt conveyor 62 for conveying B is provided.

  The belt conveyor 62 is divided into three, a film formation chamber side conveyor 62A, an intermediate chamber side conveyor 62B, and a measurement chamber side conveyor 62C, with two gate valves 61A and 61B as a boundary. When closing the gate valves 61A and 61B, between the film forming chamber side conveyor 62A and the intermediate chamber side 62B, and between the intermediate chamber side 62B and the measuring chamber side conveyor 62C, the gate valves 61A and 61B A valve plate (not shown) enters. As a result, as in the first embodiment, when the gate valves 61A and 61B are closed, the presence of the belt conveyor 62 becomes an obstacle and the shielding performance is not impaired. Further, a delivery mechanism 34 having the same configuration as that of the first embodiment is provided between the film forming chamber side conveyor 62A and the intermediate chamber side conveyor 62B, and between the intermediate chamber side conveyor 62B and the measurement chamber side conveyor 62C. The delivery mechanism 34 can deliver the substrate B placed on the work table 38 between the conveyors 62A, 62B, and 62C.

  The intermediate chamber 60 is provided with a position detection sensor 63 (corresponding to the position detection unit of the present invention) for detecting the position of the substrate B on the belt conveyor 62. The position information of the substrate B obtained by the position detection sensor 63 is sent to the host computer C, and an instruction to open and close the gate valves 61A and 61B is issued from the host computer C based on the position information.

  The cleaning chamber 60A is connected to a vacuum pump P2 (corresponding to the intermediate chamber pressure adjusting mechanism of the present invention) via the exhaust pipe 51. The exhaust pipe 51 is provided with a pressure adjusting valve 52 so that the internal pressure of the cleaning chamber 60A can be adjusted.

  Next, a procedure for forming a film by the film forming apparatus 50 configured as described above will be described with reference to the flowchart of FIG. 7 and FIGS. 10 to 13. Note that the operation of the film forming apparatus 50 described below is automatically controlled by a program stored in the host computer C, as in the first embodiment.

  First, as shown in FIG. 10A, the pressure adjustment valve 41A on the film formation chamber side is opened, and the vacuum pump P is started with the pressure adjustment valve 41B on the measurement chamber side and the gate valve 61B on the measurement chamber closed. Then, the inside of the film forming chamber 10 is depressurized until it is almost in a vacuum state. At the same time, the pressure adjusting valve 52 on the intermediate chamber side is opened, the vacuum pump P2 is activated, and the inside of the cleaning chamber 60A is decompressed until it is almost in a vacuum state.

  Next, the loading / unloading port 24 is opened, and the substrate B is loaded into the measurement chamber 20. After loading the substrate B, the loading / unloading port 24 is closed by the door portion 25. Then, the pressure adjustment valve 41B on the measurement chamber side is opened, and the pressure in the measurement chamber 20 is reduced until it becomes almost vacuum.

  Next, as shown in FIGS. 10B and 11A, the belt conveyor 62 is driven to transport the substrate B from the measurement chamber 20 to the film formation chamber 10 (substrate loading step S1). When the belt conveyor 62 is driven, first, the position detection sensor 63 detects that the substrate B is transported from the measurement chamber 20 toward the cleaning chamber 60A of the intermediate chamber 60, and sends this information to the host computer C. . Based on this information, the host computer C opens the gate valve 61B on the measurement chamber side. Then, the substrate B is transferred between the measurement chamber side conveyor 62C and the intermediate chamber side conveyor 62B, and carried into the cleaning chamber 60A (FIG. 10B). At the same time, while the gate valve 61B on the measurement chamber side is open, control is performed so that the gate valve 61A on the film formation chamber side is always closed so that the film formation chamber 10 is kept in a reduced pressure state. .

  Next, the position detection sensor 63 detects that the substrate B is being transported from the cleaning chamber 60 </ b> A toward the film forming chamber 10, and sends this information to the host computer C. Based on this information, the host computer C switches on the cleaner 39 and supplies the purge gas into the cleaning chamber 60A. In this state, the gate valve 61A on the film forming chamber side is opened. Then, the substrate B is transferred between the intermediate chamber side conveyor 62B and the film forming chamber side conveyor 62A, and carried into the film forming chamber 10 (FIG. 11A). At the same time, control is performed so that the gate valve 61B on the measurement chamber side is always closed while the gate valve 61A on the film formation chamber side is open.

  At this time, the pressure adjusting valve 41A is opened on the film forming chamber 10 side, and the gas supplied from the cleaner 39 is exhausted by the vacuum pump P. On the cleaning chamber 60A side of the intermediate chamber 60, the pressure adjusting valve 52 is Since it is not open, exhaust is not performed. Therefore, the internal pressure of the cleaning chamber 60A becomes higher than the internal pressure of the film forming chamber 10, and the air flow in the film forming apparatus 1 always moves from the cleaning chamber 60A side to the film forming chamber 10 side. By doing so, it is possible to prevent the aerosol and material particles M in the film forming chamber 10 from flowing into the cleaning chamber 60A and eventually into the measuring chamber 20 side. That is, the inside of the measurement chamber 20 due to the aerosol Z and the material particles M can be prevented, the inside of the measurement chamber 20 can be kept clean, and the measurement accuracy can be maintained.

  When the transfer of the substrate B is completed, the gate valve 61A on the film forming chamber side is closed and the cleaner 39 is switched off. In addition, since the internal pressure of the cleaning chamber 60A is high when the substrate B is transferred, the pressure adjusting valve 52 on the intermediate chamber side is opened, and the internal pressure of the cleaning chamber 60A is substantially equal to the internal pressure of the film forming chamber 10 and the measurement chamber 20. Adjust until After the adjustment, the pressure adjustment valve 52 is closed.

  Subsequently, as shown in FIG. 11B, film formation is performed (film formation process or piezoelectric film formation process S2). Since the film forming procedure is the same as that of the first embodiment, the description thereof is omitted.

  After film formation, as shown in FIGS. 12A and 12B, the substrate B is moved from the film formation chamber 10 to the measurement chamber 20 (first substrate movement step S3). When the belt conveyor 62 is driven, the position detection sensor 63 first detects that the substrate B is being transported from the film forming chamber 10 toward the cleaning chamber 60A of the intermediate chamber 60, and this information is sent to the host computer C. send. Based on this information, the host computer C switches on the cleaner 39 and supplies the purge gas into the intermediate chamber 30. At the same time, the gate valve 61A on the film forming chamber side is opened. Then, the substrate B is transferred between the film forming chamber side conveyor 62A and the intermediate chamber side conveyor 62B, and carried into the cleaning chamber 60A (FIG. 12A). At the same time, while the gate valve 61A on the film formation chamber side is open, control is performed so that the gate valve 61B on the measurement chamber side is always closed so that the film formation chamber 10 is kept in a reduced pressure state. .

  At this time, as in the substrate loading step S1, the pressure adjustment valve 41A is opened on the film forming chamber 10 side, and the gas supplied from the cleaner 39 is exhausted by the vacuum pump P. Since the pressure adjusting valve 52 is not opened on the cleaning chamber 60A side, no exhaust is performed. Therefore, the internal pressure of the cleaning chamber 60A becomes higher than the internal pressure of the film forming chamber 10, and the air flow in the film forming apparatus 1 always moves from the cleaning chamber 60A side to the film forming chamber 10 side. By doing so, it is possible to prevent the aerosol and material particles M in the film forming chamber 10 from flowing into the cleaning chamber 60A, and consequently, from flowing into the measuring chamber 20 side. In this way, the aerosol Z and the material particles M in the film forming chamber 10 are prevented from flowing into the measuring chamber 20 and contaminating the inside of the measuring chamber 20, and the inside of the measuring chamber 20 is kept clean. Thereby, measurement accuracy can be maintained.

  In the cleaning chamber 60 </ b> A, while the substrate B passes below the cleaner 39, a purge gas is blown onto the substrate B by the cleaner 39 to clean the substrate B. This prevents surplus material particles M from adhering to the substrate B and being carried into the measurement chamber 20 to contaminate the inside of the measurement chamber 20. When the cleaning of the substrate B is completed, the cleaner 39 is stopped.

  Next, since the internal pressure of the cleaning chamber 60A is increased by the supply of the purge gas from the cleaner 39, the pressure adjusting valve 52 on the intermediate chamber side is opened, and the film forming chamber 10 and the measurement chamber 20 are opened in the cleaning chamber 60A. The pressure is reduced to approximately equal to the internal pressure. After depressurization, the pressure adjustment valve 52B is closed.

  Next, the substrate B is transferred from the cleaning chamber 60 </ b> A to the measurement chamber 20. When the belt conveyor 62 is driven, the position detection sensor 63 detects that the substrate B is being conveyed from the cleaning chamber 60 </ b> A toward the measurement chamber 20, and sends this information to the host computer C. Based on this information, the host computer C opens the gate valve 61B on the measurement chamber side. Then, the substrate B is transferred between the intermediate chamber side conveyor 62B and the measurement chamber side conveyor 62C and carried into the measurement chamber 20. At the same time, control is performed so that the gate valve 61A on the film forming chamber is always closed while the gate valve 61B on the measurement chamber side is open. In this way, the aerosol Z and the material particles M in the film forming chamber 10 are prevented from flowing into the measuring chamber 20 and contaminating the inside of the measuring chamber 20, and the inside of the measuring chamber 20 is kept clean. Thereby, measurement accuracy can be maintained.

  When the transfer of the substrate B is completed, the gate valve 31B on the measurement chamber side is closed.

  Subsequently, as shown in FIG. 13, the film thickness distribution of the film formed in the film forming process is measured (film thickness measuring process S4). Since the measurement procedure is the same as that of the first embodiment, the description thereof is omitted.

  When the measurement is completed, the host computer C determines whether a film having a predetermined reference thickness is formed based on the transmitted data (determination step S5). When it is determined that the film has a reference thickness, or when it is determined that the film has a thickness larger than the reference thickness, the film formation is finished and the gate valve 61B is closed. Then, the loading / unloading port 24 is opened, and the substrate B is unloaded from the measurement chamber 20 (substrate unloading step S6). The details of the substrate carry-out step S6 are the same as those in the first embodiment, and a description thereof will be omitted.

  On the other hand, if it is determined that the film is less than the reference thickness, the substrate B is moved again to the film forming chamber 10 (second substrate moving step S7). That is, in the same manner as when the substrate B is loaded, the gate valve 61B on the measurement chamber side is first opened and the gate valve 61A on the film formation chamber side is closed, and the substrate B is transferred from the measurement chamber 20 to the cleaning chamber 60A. Transport (FIG. 10B). Next, while supplying the purge gas from the cleaner 39, the substrate B is transferred from the cleaning chamber 60A to the film formation chamber 10 with the gate valve 61A on the film formation chamber opened and the gate valve 61B on the measurement chamber closed. (FIG. 11A). At this time, as in the first substrate moving step, the internal pressure of the cleaning chamber 60A is made higher than the internal pressure of the film forming chamber 10 by the purge gas supplied from the cleaner 39. This prevents the aerosol and material particles M in the film forming chamber 10 from flowing into the cleaning chamber 60A.

  When the substrate B is set on the stage, the host computer C adjusts the film formation conditions according to the analysis result in the previous film thickness measurement process (adjustment process S8), as in the first embodiment. Thereafter, the film formation step S2 is performed again (FIG. 11B).

  When film formation is completed, the substrate B is transferred again to the measurement chamber 20 (FIGS. 12A and 12B), and the film thickness is measured (FIG. 13). In this way, the substrate B is reciprocated between the film formation chamber 10 and the measurement chamber 20 until the film has a desired thickness, and film formation and measurement are repeated.

  When film formation is completed, similarly to the first embodiment, with the gate valves 61A and 61B closed, the carry-in / out port 24 is opened and the substrate B is carried out from the measurement chamber 20.

  As described above, according to this embodiment, the same operational effects as those of the first embodiment can be obtained.

  In addition, gate valves 61 are provided in the intermediate chamber 60 at two locations on the film formation chamber side and the measurement chamber side. And when one of the two gate valves 61A, 61B is opened, the other may be closed. As a result, even if the aerosol Z remaining in the film forming chamber 10 floats and the material particles M adhere to the inner wall portion and the inside of the film forming chamber 10 is considerably dirty, these remain in the measurement chamber. It is possible to prevent contamination of the inside of the measurement chamber 20 by flowing into the chamber 20. Thereby, the measurement accuracy in the measurement chamber 20 can be maintained.

  Even when the film forming apparatus 1 of the present embodiment is used, a piezoelectric actuator having a uniform piezoelectric film thickness and good piezoelectric characteristics can be easily manufactured. For example, piezoelectric material particles are used as the material particles M, the substrate B is made of metal so that it can be used as one electrode, and a piezoelectric film is formed on the metal substrate B with the particles of piezoelectric material. A piezoelectric element can be operated by forming another electrode thereon by screen printing or the like. That is, it can be used as a piezoelectric actuator.

  The technical scope of the present invention is not limited by the above-described embodiments, and, for example, those described below are also included in the technical scope of the present invention. In addition, the technical scope of the present invention extends to an equivalent range.

  In the substrate carrying-in process (S1), the first substrate moving process (S3), and the second substrate moving process (S7) of the first embodiment, the pressure adjustment valve 41A is opened on the film forming chamber 10 side, The gas supplied from the cleaner 39 is exhausted by the vacuum pump P. On the other hand, since the pressure adjustment valve 41B is not opened on the measurement chamber 20 side, exhaust is not performed. Accordingly, the internal pressure of the measurement chamber 20 becomes higher than the internal pressure of the film formation chamber 10, and the air flow in the film formation apparatus 1 always moves from the measurement chamber 20 side to the film formation chamber 10 side. That is, the measurement chamber 20 is always provided upstream of the film formation chamber 10 when viewed from the vacuum pump P.

In the substrate carrying-in process (S1), the first substrate moving process (S3), and the second substrate moving process (S7) of the second embodiment, the pressure adjustment valve 41A is opened on the film forming chamber 10 side. The gas supplied from the cleaner 39 is exhausted by the vacuum pump P. On the other hand, since the pressure adjustment valve 52 is not opened on the cleaning chamber 60A side, exhaust is not performed. Therefore, the internal pressure of the cleaning chamber 60A becomes higher than the internal pressure of the film forming chamber 10, and the air flow in the film forming apparatus 1 always moves from the cleaning chamber 60A side to the film forming chamber 10 side. That is, the cleaning chamber 60A is always provided upstream of the film forming chamber 10 when viewed from the vacuum pump P, and the measurement chamber 20 is further provided upstream thereof.
(1) In the first embodiment, the cleaner 39 also serves as the second pressure adjustment mechanism. However, the second pressure adjustment mechanism may be provided separately from the cleaner 39. For example, a difference in internal pressure between the film formation chamber 10 and the measurement chamber 20 may be adjusted by connecting a gas supply mechanism such as a gas cylinder to the measurement chamber 20 and supplying gas only to the measurement chamber 20. Further, for example, the difference in internal pressure between the film forming chamber 10 and the measuring chamber 20 may be adjusted by providing a difference in the opening degree of the two pressure adjusting valves 41A and 41B. Similarly, in the second embodiment, a separate gas supply mechanism may be provided in the cleaning chamber 60A, and the film formation chamber 10 or the measurement chamber 20 and the cleaning chamber 60A may be different depending on the opening degree of the pressure adjustment valves 41A, 41B, and 52. You may adjust the difference in internal pressure.
(2) In the second embodiment, while supplying the purge gas from the cleaner 39, the gate valves 61A and 61B are opened to move the substrate B between the film formation chamber 10 or the measurement chamber 20 and the cleaning chamber 60A. However, when the cleaner 39 does not serve also as the second pressure adjusting mechanism as described in the above (1), the cleaner 39 is operated with the two gate valves 61A and 61B closed to clean the substrate B. After the completion of cleaning and cleaning, the cleaner 39 is stopped and the pressure inside the cleaning chamber 60A is adjusted to be equal to the film forming chamber 10 and the measuring chamber 20, and then the gate valves 61A and 61B are opened to remove the substrate B. You may make it move. In this way, it is possible to avoid fluctuations in the internal pressure of the intermediate chamber during the removal operation and material particles removed from the substrate from affecting the film formation and measurement.
(3) In the second embodiment, the gates 61A and 61B are opened and the substrate B is cleaned with the film formation chamber 10 or the measurement chamber 20 in a state where the film formation chamber 10, the cleaning chamber 60A, and the measurement chamber 20 are all decompressed. Although it was moved between the chamber 60A and the two partition valves 61A and 61B, the intermediate chamber side pressure regulating valve 52, the vacuum pump 50, etc., by controlling the two chamber valves 61A and 61B, for example, the measurement chamber 20 is always kept at normal pressure, When the substrate B is moved between the chamber 20 and the cleaning chamber 60A, the inside of the cleaning chamber 60A is at a normal pressure, and when the substrate B is moved between the film forming chamber 10 and the cleaning chamber 60A, the cleaning chamber 60A. May be reduced in pressure. In this way, a relatively narrow space is required as compared with the film formation chamber and the measurement chamber, and the substrate can be moved only by changing the internal pressure of the intermediate chamber in which the internal pressure can be easily adjusted.
(4) In the above embodiment, one vacuum pump P is connected to both the film formation chamber 10 and the measurement chamber 20 via the pressure adjustment valves 41A and 41B. It may be connected to the film formation chamber and the measurement chamber to individually adjust the pressure.
(5) In the above embodiment, the film formation chamber 10 and the measurement chamber 20 are connected by the intermediate chambers 30 and 60. However, according to the present invention, the intermediate chamber is not necessarily required. For example, the measurement chamber is the film formation chamber. May be directly connected to each other, and may be partitioned by a shielding member such as a shutter.
(6) In the above embodiment, the laser interferometer 23 is provided outside the measurement chamber 20 and measures the film through the window portion 22, but the measurement mechanism is installed inside the measurement chamber. It doesn't matter.
(7) In the above embodiment, the belt conveyor 32 is provided in two rows, but the conveyor may be in one row.
(8) In the above embodiment, the operation of the film forming apparatuses 1 and 50 is automatically controlled by the host computer C. However, part or all of the operation of the film forming apparatus may be manually controlled by an operator or the like. Absent.
(9) In the second embodiment, when transferring from the cleaning chamber to the measurement chamber, no pressure difference is provided between them, but the internal pressure of the measurement chamber 20 is higher than the internal pressure of the cleaning chamber 60A. Pressure adjustment may be performed. In this way, for example, when the aerosol Z flows into the cleaning chamber 60A from the film forming chamber or the material particles M removed from the substrate B by the cleaning float in the cleaning chamber 60A. Can be prevented from flowing into the measurement chamber 20 and contaminating the inside of the measurement chamber 20.
(10) In the above embodiment, the adjustment step S8 is performed after the second substrate movement step S7, but may be performed anytime after the determination step S5, for example, the second substrate movement step S7. You may go in parallel.
(11) In the above embodiment, in the substrate loading step S1, the substrate B loaded from the loading / unloading port 24 of the measurement chamber 20 is moved to the film forming chamber 10 by the belt conveyor 32. However, the present invention is not limited to this. For example, the film forming chamber 10 may be provided with a loading port for the substrate B and a door for opening and closing the loading port, and the substrate B may be directly loaded from the outside.

It is the schematic of the film forming apparatus of 1st Embodiment. It is a block diagram which shows the structure of the film forming apparatus of 1st Embodiment. It is the elements on larger scale of a belt conveyor. FIG. 4A is a diagram showing how the substrate is transferred to the film forming apparatus in the film forming process of the first embodiment, and FIG. 4B is a diagram showing how the substrate is transferred from the measurement chamber to the film forming chamber in the film forming process of the first embodiment. FIG. FIG. 5A is a diagram illustrating a state in which a film is formed in the film formation chamber in the film formation step of the first embodiment, and FIG. 5B is a state in which the substrate is transferred from the film formation chamber to the measurement chamber in the film formation step of the first embodiment. FIG. It is a figure which shows a mode that a film thickness measurement is performed in a measurement chamber in the film formation process of 1st Embodiment. It is a flowchart which shows the flow of film formation in 1st Embodiment and 2nd Embodiment. It is the schematic of the film forming apparatus of 2nd Embodiment. It is a block diagram which shows the structure of the film forming apparatus of 1st Embodiment. FIG. 10A is a diagram illustrating how the substrate is transferred to the film forming apparatus in the film forming process of the second embodiment, and FIG. 10B illustrates how the substrate is transferred from the measurement chamber to the intermediate chamber in the film forming process of the second embodiment. FIG. FIG. 11A is a diagram illustrating a state in which the substrate is transferred from the intermediate chamber to the film formation chamber in the film formation step of the second embodiment, and FIG. 11B is a state in which film formation is performed in the film formation chamber in the film formation step of the second embodiment. FIG. FIG. 12A is a diagram showing how the substrate is transferred from the film forming chamber to the intermediate chamber in the film forming step of the second embodiment, and FIG. 12B is a step of transferring the substrate from the intermediate chamber to the measurement chamber in the film forming step of the second embodiment. It is a figure which shows a mode. It is a figure which shows a mode that a film thickness measurement is performed in a measurement chamber in the film formation process of 2nd Embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Film forming apparatus 10 ... Film-forming chamber 12 ... Injection nozzle (injection mechanism)
13 ... Aerosol generator (injection mechanism)
20 ... Measurement chamber 23 ... Laser interferometer (measuring mechanism)
24 ... Carry-in / out port 30 ... Intermediate chamber 31 ... Gate valve (blocking part)
32 ... Belt conveyor (conveyor)
39 ... Cleaner (Cleaner)
41A, 41B ... Pressure adjusting valve (valve element)
B ... Substrate G ... Gas cylinder (injection mechanism)
M ... Material particles P ... Vacuum pump (injection mechanism / pressure adjustment mechanism)
Z ... Aerosol

Claims (22)

A film formation chamber for film formation;
An injection mechanism for forming a film made of the material particles on the substrate by injecting an aerosol containing the material particles toward the substrate in the film forming chamber;
A measurement chamber communicated with the film formation chamber;
A measurement mechanism for measuring the thickness of the film in the measurement chamber;
A pressure adjusting mechanism connected to the film formation chamber and the measurement chamber to control the internal pressure of the film formation chamber and the measurement chamber;
A conveyor for transporting the substrate between the film formation chamber and the measurement chamber;
A blocking unit that blocks the film formation chamber and the measurement chamber;
A film forming apparatus comprising:   The film forming apparatus according to claim 1, wherein the measurement mechanism is of a non-contact type and is installed outside the measurement chamber.   The film forming apparatus according to claim 2, wherein the measurement mechanism is an optical mechanism including a light projecting unit that emits light to the substrate and a light receiving unit that receives reflected light from the substrate.   The film forming apparatus according to claim 1, wherein the film forming chamber and the measurement chamber are each connected to one pressure adjusting mechanism via a valve body.   The film forming apparatus according to claim 1, wherein a loading / unloading port for the substrate is provided in the measurement chamber.   The film forming apparatus according to claim 1, wherein a plurality of the conveyors are provided.   The intermediate chamber which connects both these chambers between the said film-forming chamber and the said measurement chamber is provided, The cleaner which removes the stain | pollution | contamination of the said board | substrate is provided in the said intermediate chamber. The film forming apparatus according to any one of the above.   The cleaner is a gas cleaner that removes dirt on the substrate by blowing gas onto the substrate, and the gas cleaner supplies gas to the intermediate chamber to communicate with the intermediate chamber. The film forming apparatus according to claim 7, which also serves as a second pressure adjustment mechanism for adjusting the pressure in the measurement chamber.   The film forming apparatus according to claim 8, wherein the gas is the same type as a gas forming the aerosol.   The film forming apparatus according to any one of claims 7 to 9, wherein the blocking portions are provided at two locations in the intermediate chamber, the film forming chamber side and the measurement chamber side.   The film forming apparatus according to claim 10, wherein the cleaner is installed between the two blocking portions in the intermediate chamber.   The film forming apparatus according to claim 10 or 11, wherein a pressure adjusting mechanism for an intermediate chamber that controls an internal pressure of a space defined by the two blocking portions is installed in the intermediate chamber.   2. A pressure control unit that controls the pressure adjusting mechanism or the valve body so that an internal pressure of the measurement chamber is higher than an internal pressure of the film forming chamber when the substrate is transported by the conveyor. 12. The film forming apparatus according to any one of 12 above.   An opening / closing part provided in the measurement chamber for opening / closing the carry-in / out opening, an open / close detection part for detecting an open / closed state of the carry-in / out opening by the opening / closing part, and the opening / closing detection part being in an open state. The film formation apparatus in any one of Claims 5-13 provided with the interruption | blocking control part which interrupts | blocks the said interruption | blocking part when detected.   A position detection unit provided on the conveyor for detecting the position of the substrate on the conveyor, and the measurement when the position detection unit detects that there is a substrate between the film formation chamber and the intermediate chamber. When the position detecting unit detects that there is a substrate between the measurement chamber and the intermediate chamber, the chamber side blocking unit is blocked and the film forming chamber side blocking unit is opened. The film formation apparatus in any one of Claims 10-14 provided with the interruption | blocking control part which open | releases the interruption | blocking part of the said measurement chamber while interrupting | blocking the interruption part of this.   A determination unit for determining whether the thickness of the film measured by the measurement mechanism is smaller than a predetermined reference thickness; and the injection mechanism based on the thickness of the film measured by the measurement mechanism When the determination unit determines that the film thickness is smaller than the reference thickness, the substrate is transferred from the measurement chamber to the film formation chamber when the determination unit determines that the film thickness is smaller than the reference thickness. And adjusting the injection condition of the injection mechanism so as to correspond to the thickness of the film, and the injection mechanism with respect to the substrate transferred to the film forming chamber according to the adjusted injection condition. The film formation apparatus in any one of Claims 1-15 provided with the apparatus control part which performs the injection of the said aerosol. A film formation chamber for forming a film, an injection mechanism for injecting an aerosol containing material particles in the film formation chamber, a measurement chamber communicated with the film formation chamber, and a film formed in the measurement chamber A method of forming a film made of the material particles on a substrate by a film forming apparatus comprising a measurement mechanism for measuring the thickness of the film, and a blocking unit that blocks between the film formation chamber and the measurement chamber,
(a) a substrate carrying-in step of carrying the substrate into the film forming chamber;
(b) a film forming step of forming the film on the substrate by spraying the aerosol from the spray mechanism in a state where the film forming chamber is shut off from the measurement chamber;
(c) a first substrate moving step of moving the substrate from the film formation chamber to the measurement chamber in a state where the film formation chamber and the measurement chamber are decompressed;
(d) a film thickness measuring step for measuring the film thickness of the film;
(e) a determination step of determining whether the film has reached a predetermined reference thickness based on a measurement result in the film thickness measurement step;
(f) re-forming step of re-forming the film when it is determined in the determining step that the film is smaller than the reference thickness,
(g) a second substrate moving step in which the re-forming step moves the substrate from the measurement chamber to the film formation chamber in a state where the film formation chamber and the measurement chamber are decompressed; and (h) the film thickness An adjustment step of adjusting the setting of film formation conditions in the film formation step based on the measurement result in the measurement step; and (i) the film formation step, the first substrate movement step, the film thickness measurement step, and the determination And a step of executing the process again.   A board unloading step of unloading the substrate from the measurement chamber instead of the re-forming step after the determination step when the film is determined to be equal to or more than the reference thickness in the determination step. 18. The film forming method according to 17.   The film forming method according to claim 17 or 18, wherein, in the first substrate moving step and the second substrate moving step, an internal pressure of the measurement chamber is made higher than an internal pressure of the film forming chamber.   In the measurement chamber, a loading / unloading port for loading / unloading the substrate into / from the apparatus is provided, and in the substrate loading / unloading step, the substrate is loaded from the loading / unloading port in a state where the film formation chamber is blocked from the measurement chamber, The film forming method according to claim 17, wherein the substrate is moved from the measurement chamber to the film forming chamber.   An intermediate chamber is provided between the film formation chamber and the measurement chamber. The intermediate chamber communicates with both chambers. In the intermediate chamber, a blocking portion is provided at two locations on the film formation chamber side and the measurement chamber side. After the carrying-in process, in the first substrate moving process and the second substrate moving process, when the substrate is moved between the film forming chamber and the intermediate chamber, the blocking portion on the measurement chamber side is closed. When the substrate is moved between the measurement chamber and the intermediate chamber, the measuring chamber is closed with the blocking portion on the film forming chamber side closed. 21. The film forming method according to claim 17, wherein the side blocking portion is opened. A film formation chamber for forming a film, an injection mechanism for injecting aerosol containing particles of piezoelectric material in the film formation chamber, a measurement chamber communicated with the film formation chamber, and a film formed in the measurement chamber A piezoelectric film made of particles of the piezoelectric material is formed on the substrate by a film forming apparatus including a measurement mechanism for measuring the thickness of the film and a blocking unit that blocks between the film formation chamber and the previous measurement chamber. A method for manufacturing a piezoelectric actuator, comprising:
(a) a substrate carrying-in step of carrying the substrate into the film forming chamber;
(b) a piezoelectric film forming step of forming the piezoelectric film on the substrate by injecting the aerosol from the injection mechanism in a state where the film formation chamber is cut off from the measurement chamber;
(c) a first substrate moving step of moving the substrate from the film formation chamber to the measurement chamber in a state where the film formation chamber and the measurement chamber are decompressed;
(d) a film thickness measuring step for measuring the film thickness of the piezoelectric film;
(e) a determination step of determining whether or not the piezoelectric film has reached a predetermined reference thickness based on a measurement result in the film thickness measurement step;
(f) a re-forming step of re-forming the film when it is determined in the determining step that the piezoelectric film is smaller than the reference thickness;
(j) a substrate unloading step of unloading the substrate from the measurement chamber when it is determined in the determination step that the film is equal to or greater than the reference thickness;
(g) a second substrate moving step in which the re-forming step moves the substrate from the measurement chamber to the film formation chamber in a state where the film formation chamber and the measurement chamber are decompressed; and (h) the film thickness An adjustment step of adjusting the setting of the film formation conditions in the film formation step based on the measurement result in the measurement step; (i) the piezoelectric film formation step, the first substrate movement step, the film thickness measurement step, and the And a step of executing the determination step again.

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