JP2007081153A - Manufacturing method of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of preventing the generation of surface voids. <P>SOLUTION: The manufacturing method includes a process for arraying a plurality of semiconductor chips 4 and 6 on a substrate 1; a process in which a mold 8 is put on the substrate 1, and resin is injected in a cavity 9 between the substrate 1 and the mold 8 so that a plurality of semiconductor chips 4 and 6 are collectively resin-sealed; and a process for cutting the substrate 1 and the resin into semiconductor chips 4 and 6. A resin injection gate 10 is formed for injecting the resin on one side of the mold 8. An air vent for degassing is formed on the side opposite to one side of the mold 8. The direction of injecting the resin is oriented toward a side where the air vent is formed from a side where the resin injection gate 10 is formed. The mold 8 comprises mold projections 8a, 8b, and 8c that extend downward in the resin injection path between the semiconductor chips 4 and 6 extending in the resin injecting direction outside a product region. The interval between the substrate 1 and the mold projections 8a, 8b, and 8c is shorter than the half of the maximum thickness of the resin. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a method of manufacturing a semiconductor device using a mold array package (hereinafter referred to as MAP).

  In the method of manufacturing a semiconductor device by MAP, a plurality of semiconductor chips are arranged on a substrate, a mold is placed on the substrate, a resin is injected into a cavity between the substrate and the mold, and the plurality of semiconductor chips are collectively collected. After the resin sealing, the substrate and the resin are cut for each semiconductor chip to manufacture individual semiconductor devices (see, for example, Patent Document 1 and Patent Document 2).

JP 2002-110718 A JP 2002-110721 A JP-A-5-136191

  However, when the resin is injected into the cavity, the flow resistance of the resin flowing over the semiconductor chips is large, and the flow resistance of the resin flowing between the semiconductor chips is small, so that a difference occurs in the flow speed of the resin and surface voids are generated. There was a problem. (For example, refer to Patent Document 2) Although Patent Document 3 does not describe MAP, the flow resistance of the resin flowing around the semiconductor chip is increased by a protrusion provided on the mold, thereby increasing the resistance on the semiconductor chip. Describes a technique for preventing the generation of voids. In recent years, semiconductor devices are remarkably reduced in size and thickness, and the volume margin is very small even in the resin-encapsulated portion. As described above, when a mold as described in Patent Document 3 is provided on the mold for forming a resin sealing portion that is reduced in size and thickness, the resin sealing portion is sealed within the resin sealing portion. There is a possibility that the yield of the semiconductor device is lowered, such as the possibility of exposing the gold wire to be stopped. Further, if the size of the protrusions is reduced to a level that does not affect the yield of the semiconductor device, there is a problem that the resin flow cannot be controlled well and it is difficult to reliably prevent voids.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to manufacture a semiconductor device that can prevent generation of surface voids even in a semiconductor device that is reduced in size and thickness. Get the method.

  A method of manufacturing a semiconductor device according to the present invention includes: a step of arranging a plurality of semiconductor chips on a substrate; a mold is placed on the substrate; and a resin is injected into a cavity between the substrate and the mold; A step of resin-sealing the chips collectively and a step of cutting the substrate and the resin for each semiconductor chip, and forming a resin injection gate for injecting the resin into one side of the mold; An air vent for venting air is formed on the opposite side, the direction from the side where the resin injection gate is formed to the side where the air vent is formed is the resin injection direction, and the mold is along the resin injection direction. In the extended resin injection path between semiconductor chips and having a mold protrusion extending downward outside the product region, the distance between the mold protrusion and the substrate is smaller than 1/2 of the maximum thickness of the resin. To. Other features of the present invention will become apparent below.

  According to the present invention, it is possible to prevent occurrence of surface voids by providing mold protrusions and controlling the flow of resin.

Embodiment 1 FIG.
Hereinafter, a method for manufacturing a semiconductor device according to the first embodiment of the present invention will be described with reference to the drawings.

  First, as shown in FIG. 1, a plurality of semiconductor chips 4 and 6 and a spacer 5 are arranged on a substrate 1. Here, a certain region including the semiconductor chips 4 and 6 and the spacer 5 is a product region 3 to be a product later. In the present embodiment, the size of the region (reference number) where the sealing portion of the wiring board is formed is 37 mm × 50 mm, and the size of the product region 3 is 10 mm × 13 mm.

  FIG. 2 is a cross-sectional view showing an example of a laminated structure of the semiconductor chips 4 and 6 and the spacer 5, and FIG. 3 is a plan view thereof. In the present embodiment, the semiconductor chip 4 includes a lower semiconductor chip 4, a spacer 5 and an upper semiconductor chip 6 stacked on the substrate 1. This stacked structure is an example, and the number of semiconductor chips, the presence or absence of spacers, and the like can be selected as appropriate. The semiconductor chips 4 and 6 are connected to the substrate 1 by wires 7 respectively. In the present embodiment, the size of the lower chip 4 is 8 mm × 8 mm, the size of the spacer 5 is 6 mm × 6 mm, and the size of the upper chip 6 is 7 mm × 7 mm.

  Next, as shown in FIGS. 4 and 5, a mold 8 is placed on the substrate 1. And resin is inject | poured into the cavity 9 between the board | substrate 1 and the metal mold | die 8, and several semiconductor chips 4 and 6 are resin-sealed collectively. Thereafter, the substrate 1 and the resin are cut into the semiconductor chips 4 and 6 to manufacture individual semiconductor devices.

  Here, FIG. 4 is a top view showing the inside of the mold, and FIG. 5 is a cross-sectional view of the mold at XX ′ in FIG. A resin injection gate 10 for injecting resin is formed on one side of the mold 8, and an air vent 11 for extracting air is formed on the side opposite to the one side of the mold 8. The direction from the side where the resin injection gate 10 is formed to the side where the air vent 11 is formed is the resin injection direction.

  Further, the region on the semiconductor chips 4 and 6 and extending along the resin injection direction is the on-chip resin injection path 12a. And the area | region between the semiconductor chips 4 and 6 adjacent on either side in FIG. 4, and the area | region extended along the resin injection | pouring direction is the interchip resin injection | pouring path | route 12b. Further, an area between the product areas 3 adjacent in the vertical direction in FIG. 4 and extending perpendicular to the resin injection direction is an inter-product area 12c.

  The mold 8 has mold protrusions 8a, 8b, and 8c extending downward. The mold protrusion 8a is provided in a region between the resin injection gate 10 and the plurality of semiconductor chips 4 and 6 in parallel with the side where the resin injection gate 10 is formed. The mold protrusion 8b is provided outside the product region 3 in the inter-chip resin injection path 12b. Further, the mold protrusion 8 c is provided in a region between the plurality of semiconductor chips 4 and 6 and the air vent 11 in parallel with the side where the air vent 11 is formed. Further, the thickness A of the resin immediately below the mold protrusions 8a, 8b, 8c is smaller than 1/2 of the maximum thickness B of the resin (A <B / 2). By thus providing the mold protrusions 8a, 8b, and 8c to control the resin flow, the resin flow resistance in the inter-chip resin injection path 12b can be made closer to the resin flow resistance in the on-chip resin injection path 12a. Therefore, the generation of surface voids can be prevented. Thus, in order to control the flow of the resin, it is necessary to provide the mold protrusions 8a, 8b, 8c having a sufficient height. As described above, the height of the mold protrusions 8a, 8b, and 8c is such that the resin thickness A just below the mold protrusions 8a, 8b, and 8c is smaller than 1/2 of the maximum thickness B of the resin. It is necessary to be safe. As described above, in order to provide a sufficiently high protrusion, avoid the product region 3 where various members constituting the semiconductor device such as the semiconductor chips 4 and 6 and the wires 7 are arranged, and a portion outside the product region. It is important to provide the mold protrusions 8a, 8b and 8c.

  Further, it is preferable to inject resin (A> 0) directly below the mold protrusion 8b. Thereby, since it is possible to prevent the resin from peeling immediately below the mold protrusion 8b, it is possible to prevent the peeling from propagating to the product region 3 starting from the peeling immediately below the mold protrusion 8b.

  Further, it is preferable that the mold protrusion 8b does not exist on the center line of the on-chip resin injection path 12a and in the inter-product region 12c. Thereby, the flow resistance of the resin flowing through the on-chip resin injection path 12a can be reduced.

  Further, it is preferable that the resin thickness A immediately below the mold protrusion 8b is smaller than the minimum resin thickness C on the upper semiconductor chip 6 (A <C). The mold protrusion 8b exists in the inter-product region 12c extending perpendicular to the resin injection direction, and the width D in the direction perpendicular to the resin injection direction of the mold protrusion 8b is equal to that of the inter-chip resin injection path 12b. It is preferable that it is larger than the width E (D> E). Thereby, the flow resistance of the resin flowing through the inter-chip resin injection path 12b can be increased.

  Specifically, as shown in FIG. 6, the cavity 9 is 50 mm × 37 mm, the distance between the product areas 3 is 3 mm, the distance between the end of the cavity 9 and the product area 3 is 1.5 mm, and the resin of the mold protrusion 8b. The width in the direction perpendicular to the injection direction is 11 mm, and the distance between the mold protrusions 8b is 5 mm. Further, as shown in FIG. 7, the resin thickness just below the mold protrusions 8a, 8b, 8c is 0.2 mm, the maximum resin thickness in the cavity 9 is 0.91 mm, and the resin on the upper semiconductor chip 6 The minimum thickness is 0.23 mm.

Embodiment 2. FIG.
FIG. 8 is a top view showing the inside of the mold according to Embodiment 2 of the present invention. Constituent elements similar to those in FIG.

  The mold 8 has a mold protrusion 8d (first mold protrusion) extending downward and a metal protrusion 8e (second metal protrusion). The mold protrusion 8d is provided in the inter-product region 12c and does not exist on the center line between the adjacent resin injection gates 10. The mold protrusion 8 e is provided in a region between the plurality of semiconductor chips 4 and 6 and the air vent 11 and does not exist at the end of the cavity 9. Further, the thickness of the resin directly below the mold protrusions 8d and 8e is smaller than 1/2 of the maximum thickness of the resin.

  By providing the mold protrusions 8d and 8e in this way, it is possible to control the resin so that the resin flows obliquely on the semiconductor chips 4 and 6, so that the generation of surface voids can be prevented.

  Similarly to the first embodiment, it is preferable to inject resin directly under the mold protrusions 8d and 8e, and the thickness of the resin directly under the mold protrusion is smaller than the minimum thickness of the resin on the semiconductor chip. Small is preferable.

  The mold protrusions 8d and 8e are preferably present outside the product area. Thus, the mold protrusions 8d and 8e can be provided without being affected by the package shape of the semiconductor device.

It is a top view which shows the state which arranged the several semiconductor chip on the board | substrate. It is sectional drawing which shows an example of a semiconductor chip. It is a top view which shows an example of a semiconductor chip. It is a top view which shows the inside of a metal mold | die. It is sectional drawing of the metal mold | die in XX 'of FIG. It is a top view which shows an example of a metal mold | die. It is sectional drawing which shows an example of a metal mold | die. It is a top view which shows the inside of the metal mold | die which concerns on Embodiment 2 of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Board | substrates 4 and 6 Semiconductor chip 3 Product area | region 8 Mold 8a-8e Mold protrusion 9 Cavity 10 Resin injection gate 11 Air vent 12a Resin injection path 12b on a semiconductor chip Resin injection path 12c between semiconductor chips Inter-product area

Claims (11)

Arranging a plurality of semiconductor chips on a substrate;
Covering the substrate with a mold, injecting resin into a cavity between the substrate and the mold, and collectively sealing the plurality of semiconductor chips;
Cutting the substrate and the resin for each semiconductor chip,
A resin injection gate for injecting the resin on one side of the mold is formed,
An air vent for venting air is formed on a side opposite to the one side of the mold,
The direction from the side where the resin injection gate is formed toward the side where the air vent is formed is the resin injection direction,
The mold has a mold projection extending into the cavity in the resin injection path between the semiconductor chips extending along the resin injection direction and outside the product region,
A method of manufacturing a semiconductor device, wherein the thickness of the resin immediately below the mold protrusion is smaller than 1/2 of the maximum thickness of the resin in the cavity.   The method of manufacturing a semiconductor device according to claim 1, wherein the resin is also injected directly under the mold protrusion.   The mold protrusion is not present in a center line of a resin injection path on a semiconductor chip extending along a resin injection direction and in an inter-product region extending perpendicular to the resin injection direction. A method for manufacturing a semiconductor device according to claim 1.   The method of manufacturing a semiconductor device according to claim 1, wherein the thickness of the resin immediately below the mold protrusion is smaller than the minimum thickness of the resin on the semiconductor chip.   2. The method of manufacturing a semiconductor device according to claim 1, wherein a width of the mold protrusion in a direction perpendicular to a resin injection direction is larger than a width of the resin injection path between the semiconductor chips.   6. The method of manufacturing a semiconductor device according to claim 5, wherein the mold protrusion is present in an inter-product region extending perpendicular to the resin injection direction. Arranging a plurality of semiconductor chips on a substrate;
Covering the substrate with a mold, injecting resin into a cavity between the substrate and the mold, and collectively sealing the plurality of semiconductor chips;
Cutting the substrate and the resin for each semiconductor chip,
A plurality of resin injection gates for injecting the resin on one side of the mold are formed,
An air vent for venting air is formed on a side opposite to the one side of the mold,
The direction from the side where the resin injection gate is formed toward the side where the air vent is formed is the resin injection direction,
The mold has a first mold protrusion extending downward in an inter-product region extending perpendicular to the resin injection direction,
The first mold protrusion does not exist on the center line between the adjacent resin injection gates,
A method of manufacturing a semiconductor device, wherein the thickness of the resin immediately below the mold protrusion is smaller than 1/2 of the maximum thickness of the resin.   The method of manufacturing a semiconductor device according to claim 7, wherein the resin is also injected directly under the mold protrusion.   The method of manufacturing a semiconductor device according to claim 7, wherein the mold protrusion is present outside a product region.   The method of manufacturing a semiconductor device according to claim 7, wherein a thickness of the resin just below the mold protrusion is smaller than a minimum thickness of the resin on the semiconductor chip. The mold has a second mold protrusion extending downward in a region between the plurality of semiconductor chips and the air vent;
The method of manufacturing a semiconductor device according to claim 7, wherein the second mold protrusion does not exist at an end of the cavity.

Images