JP2007073945A5 - - Google Patents

Download PDF

Info

Publication number
JP2007073945A5
JP2007073945A5 JP2006217002A JP2006217002A JP2007073945A5 JP 2007073945 A5 JP2007073945 A5 JP 2007073945A5 JP 2006217002 A JP2006217002 A JP 2006217002A JP 2006217002 A JP2006217002 A JP 2006217002A JP 2007073945 A5 JP2007073945 A5 JP 2007073945A5
Authority
JP
Japan
Prior art keywords
layer
columnar
semiconductor layer
dimensional
photonic crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006217002A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007073945A (ja
JP4933193B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2006217002A priority Critical patent/JP4933193B2/ja
Priority claimed from JP2006217002A external-priority patent/JP4933193B2/ja
Publication of JP2007073945A publication Critical patent/JP2007073945A/ja
Publication of JP2007073945A5 publication Critical patent/JP2007073945A5/ja
Application granted granted Critical
Publication of JP4933193B2 publication Critical patent/JP4933193B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2006217002A 2005-08-11 2006-08-09 面発光レーザ、該面発光レーザにおける二次元フォトニック結晶の製造方法 Expired - Fee Related JP4933193B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006217002A JP4933193B2 (ja) 2005-08-11 2006-08-09 面発光レーザ、該面発光レーザにおける二次元フォトニック結晶の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005233776 2005-08-11
JP2005233776 2005-08-11
JP2006217002A JP4933193B2 (ja) 2005-08-11 2006-08-09 面発光レーザ、該面発光レーザにおける二次元フォトニック結晶の製造方法

Publications (3)

Publication Number Publication Date
JP2007073945A JP2007073945A (ja) 2007-03-22
JP2007073945A5 true JP2007073945A5 (enrdf_load_stackoverflow) 2009-09-24
JP4933193B2 JP4933193B2 (ja) 2012-05-16

Family

ID=37935092

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006217002A Expired - Fee Related JP4933193B2 (ja) 2005-08-11 2006-08-09 面発光レーザ、該面発光レーザにおける二次元フォトニック結晶の製造方法

Country Status (1)

Country Link
JP (1) JP4933193B2 (enrdf_load_stackoverflow)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5089215B2 (ja) * 2007-03-28 2012-12-05 古河電気工業株式会社 窒化物化合物半導体層のエッチング方法及びその方法を用いて製造された半導体デバイス
JP5118544B2 (ja) 2007-05-15 2013-01-16 キヤノン株式会社 面発光レーザ素子
JP4350774B2 (ja) 2007-07-31 2009-10-21 キヤノン株式会社 面発光レーザ
US8194509B2 (en) 2009-07-30 2012-06-05 Tdk Corporation Thermally-assisted magnetic recording head comprising light source with photonic-band layer
EP3923352A1 (en) * 2010-01-27 2021-12-15 Yale University, Inc. Conductivity based selective etch for gan devices and applications thereof
KR101550117B1 (ko) * 2011-02-18 2015-09-03 에피스타 코포레이션 광전 소자 및 그 제조 방법
JP5836609B2 (ja) * 2011-03-04 2015-12-24 キヤノン株式会社 面発光レーザ、アレイ及び画像形成装置
JP5906108B2 (ja) * 2012-03-23 2016-04-20 キヤノン株式会社 フォトニック結晶の製造方法及び面発光レーザの製造方法
US11095096B2 (en) 2014-04-16 2021-08-17 Yale University Method for a GaN vertical microcavity surface emitting laser (VCSEL)
CN107078190B (zh) 2014-09-30 2020-09-08 耶鲁大学 用于GaN垂直微腔面发射激光器(VCSEL)的方法
US11018231B2 (en) 2014-12-01 2021-05-25 Yale University Method to make buried, highly conductive p-type III-nitride layers
EP3298624B1 (en) 2015-05-19 2023-04-19 Yale University A method and device concerning iii-nitride edge emitting laser diode of high confinement factor with lattice matched cladding layer
JP7531805B2 (ja) 2020-06-30 2024-08-13 セイコーエプソン株式会社 発光装置およびプロジェクター
CN116526294B (zh) * 2023-06-26 2023-11-10 苏州长光华芯光电技术股份有限公司 一种半导体发光结构及其制备方法、封装模组

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10284806A (ja) * 1997-04-10 1998-10-23 Canon Inc フォトニックバンド構造を有する垂直共振器レーザ
DK1371120T3 (da) * 2001-03-09 2013-07-22 Alight Photonics Aps Bølgetypekontrol ved anvendelse af transversal båndgabsstruktur i vcsels
JP2004006567A (ja) * 2002-03-26 2004-01-08 Japan Science & Technology Corp 点欠陥３次元フォトニック結晶光共振器
JP4063740B2 (ja) * 2003-08-29 2008-03-19 国立大学法人京都大学 エアブリッジ構造を有する２次元フォトニック結晶及びその製造方法
JP4602701B2 (ja) * 2004-06-08 2010-12-22 株式会社リコー 面発光レーザ及び光伝送システム

Similar Documents

Publication Publication Date Title
JP2007073945A5 (enrdf_load_stackoverflow)
JP2012037912A5 (ja) 発光装置
SG135111A1 (en) Device manufacturing method and computer program product
JP2011529626A5 (enrdf_load_stackoverflow)
JP2008066727A5 (enrdf_load_stackoverflow)
JP2010056579A5 (enrdf_load_stackoverflow)
JP2011124301A5 (enrdf_load_stackoverflow)
JP2014029476A5 (enrdf_load_stackoverflow)
MX2010004896A (es) Produccion de capas de estado solido independientes mediante procesamiento termico de sustratos con un polimero.
JP2010108591A5 (enrdf_load_stackoverflow)
JP2014509038A5 (enrdf_load_stackoverflow)
JP2010232644A5 (enrdf_load_stackoverflow)
EP1722265A8 (en) Photonic crystal semiconductor device and method for manufacturing same
JP2014189422A5 (enrdf_load_stackoverflow)
JP2008034697A5 (enrdf_load_stackoverflow)
JP2012509583A5 (enrdf_load_stackoverflow)
JP2008529825A5 (enrdf_load_stackoverflow)
JP2008034795A5 (enrdf_load_stackoverflow)
JP2011060901A5 (enrdf_load_stackoverflow)
JP2012080104A5 (enrdf_load_stackoverflow)
JP2006252772A5 (enrdf_load_stackoverflow)
JP2009048143A5 (enrdf_load_stackoverflow)
ATE512114T1 (de) Dreidimensionale struktur mit sehr hoher dichte
WO2012067469A3 (ko) 콜로이달 나노 입자를 이용한 바이오 필름 형성 방지용 기판의 제조방법, 이로부터 제조된 기판 및 상기 기판을 포함하는 수질 검사 센서
JP2014188668A5 (ja) 基板の製造方法及びキャリア