JP2007073880A - Substrate processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of controlling a pressure in its processing chamber to be maintained to a predetermined value, and of discharging a stored liquid independently of variations in an external pressure. <P>SOLUTION: The substrate processing apparatus includes: a reservoir 36 provided to an exhaust line 4 for exhausting a processing gas in the processing chamber 19, and for storing a liquid contained in the processing gas; a liquid discharge line 37 provided to a downstream side from the reservoir 36, and for discharging the liquid from the reservoir 36; a pressure control means 24 for controlling the pressure in the processing chamber 19; an absolute pressure detection means 24b for detecting the pressure in the processing chamber 19 in unit by an absolute pressure; and a differential pressure detection means 23 for detecting the pressure in the processing chamber 19 by a differential pressure from the external pressure. The substrate processing apparatus controls the liquid discharge line 37 so as not to be communicatively connected to the outer part of the apparatus, while controlling the pressure control means 24 on the basis of a detection value detected by the absolute pressure detection means 24b when processing the substrate; and controls the liquid discharge line 37 so as to be communicatively connected to the outer part of the apparatus on the basis of a detection value detected by the differential pressure detection means 23. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus for forming a film such as an oxide film on a substrate such as a silicon wafer.

  The substrate processing apparatus includes a processing furnace for processing a substrate such as a silicon wafer, stores a predetermined number of wafers in a processing chamber in the processing furnace, introduces a processing gas while heating the wafer, A film forming process or a process such as impurity diffusion is performed on the wafer surface. Also, in a substrate processing apparatus that generates an oxide film by using pure water vapor as a processing gas, for example, a processing that includes a liquefied component in the exhaust gas after processing, liquid storage means for storing the liquefied component in the exhaust system of the processing furnace It has.

  For example, Patent Document 1 shows a semiconductor manufacturing apparatus having a pyrogenic furnace 57 for generating an oxide film as shown in FIG. 7, and the exhaust system 58 captures liquefied water in the exhaust gas. Moreover, the water reservoir 59 which discharges | emits water when it becomes more than predetermined amount is shown. Further, in order to make the film formation quality constant, the exhaust system 58 is provided with an exhaust control valve device for keeping the pressure in the processing chamber at a predetermined pressure (not shown in FIG. 7). )

  2. Description of the Related Art Conventionally, an exhaust control valve device detects the pressure in a processing chamber with reference to the outside air pressure, and controls the processing chamber based on the detection result. On the other hand, the detected external air pressure varies depending on the altitude and the external air pressure at which the substrate processing apparatus is installed. Therefore, the variation in the external air pressure is taken into consideration to prevent the pressure in the processing chamber from fluctuating due to the influence. Thus, the pressure control by the exhaust control valve device has to be performed, and there is a problem that adjustment work is troublesome.

  Further, when discharging the liquid stored in the liquid storage means, it must be considered that there is no fluctuation in the pressure in the processing chamber, and further, the liquefied liquid does not remain in the piping constituting the exhaust system 58. Must be considered in the same way.

JP-A-6-326085

  In view of such circumstances, the present invention makes it possible to maintain and control the pressure in the processing chamber to a predetermined value regardless of fluctuations in the external pressure, and to discharge the stored liquid without changing the pressure in the processing chamber. It is.

  The present invention is provided in a processing chamber for processing a substrate, a gas supply line for supplying a processing gas to the processing chamber, an exhaust line for exhausting the processing gas in the processing chamber, and the exhaust line. A liquid storage device for storing the liquefied material, a drainage line provided downstream of the liquid storage device, for discharging the liquefied material from the liquid storage device to the outside, and provided in the exhaust line. A pressure control means for controlling the pressure, an absolute pressure detection means for detecting the pressure of the processing chamber as an absolute pressure, provided in the exhaust line, and a difference between the pressure of the processing chamber and the outside air provided in the exhaust line. A differential pressure detecting means for detecting pressure, and when processing a substrate, the drain line and the outside communicate with each other while controlling the pressure control means based on a detection value detected by the absolute pressure detecting means. Before discharging the liquefied material. Wherein based on a detection value detected by the differential pressure detecting means discharge line and the outside is related to a substrate processing apparatus for controlling so as to become a state of communicating.

  According to the present invention, a processing chamber is provided in the processing chamber for processing a substrate, a gas supply line for supplying a processing gas to the processing chamber, an exhaust line for exhausting the processing gas in the processing chamber, and the exhaust line. A liquid storage device for storing the liquefied material therein, a drain line provided on the downstream side of the liquid storage device, for discharging the liquefied material from the liquid storage device to the outside, and the exhaust line, A pressure control means for controlling the pressure of the chamber; an absolute pressure detection means for detecting the pressure of the processing chamber as an absolute pressure; provided in the exhaust line; Differential pressure detection means for detecting the pressure difference between the drain line and the outside while controlling the pressure control means based on the detection value detected by the absolute pressure detection means. When the liquid is discharged Since the control is performed so that the drainage line communicates with the outside based on the detection value detected by the differential pressure detecting means, the influence of the outside air from the drainage line and the fluctuation of the atmospheric pressure is prevented. This makes it possible to perform processing under a certain exhaust pressure, improve the processing quality, enable stable substrate processing, and the pressure in the exhaust line and the processing chamber is external pressure even when liquefied material is discharged. It exhibits excellent effects such as preventing negative pressure from being discharged smoothly.

  The best mode for carrying out the present invention will be described below with reference to the drawings.

  First, referring to FIG. 1, an example of an oxidation and diffusion processing furnace used in a substrate processing apparatus in which the present invention is implemented will be described.

  FIG. 1 shows a batch type processing furnace, in which a heater 10 as a heating means is erected on a heater base 21, a silicon carbide soaking tube 1 is concentrically housed in the heater 10, and the soaking tube 1 A reaction tube 2 made of silicon carbide or quartz is concentrically disposed therein, and the reaction tube 2 defines a processing chamber 19.

  An introduction port 5 is attached to the lower end of the reaction tube 2, and the introduction port 5 is connected to a processing gas supply source (not shown) (for example, a steam generator) or an inert gas such as nitrogen gas (via a gas supply line). The gas supply line is provided with a gas supply pipe 3 and a flow rate control means such as a mass flow controller 22. The mass flow controller 22 can control the flow rate of water vapor (H2 O) or gas supplied to a predetermined amount.

  An exhaust port 9 communicates with the lower end of the reaction tube 2, and the exhaust port 9 is connected to an exhaust device (not shown) via a gas exhaust line. The gas exhaust line includes a gas exhaust tube 4, a differential pressure type pressure. A sensor 23 and a pressure control valve 24 are provided.

  The pressure control valve 24 includes a vacuum generator 24a, which will be described later, and an absolute pressure detection sensor 24b. The vacuum generator 24a generates a vacuum by high-speed injection (ejector) of nitrogen gas from an N2 supply line 45, which will be described later, and the absolute pressure detection sensor 24b and an exhaust pressure detection line 49, which will be described later. The pressure difference of the gas exhaust pipe 4 obtained from the above, that is, the absolute pressure of the gas exhaust pipe 4, in other words, the absolute pressure of the processing chamber 19 is detected, and the absolute pressure detection sensor 24b has a pressure of 0 to 1330 hPa. The pressure can be detected within the range, and the detected pressure is sent to the pressure control unit 29.

  A conduit 6 communicates with the introduction port 5, the conduit 6 rises along the outer surface of the reaction tube 2, communicates with a gas reservoir 7 provided on the upper end surface of the reaction tube 2, and the gas reservoir The part 7 communicates with the processing chamber 19 through the dispersion hole 8.

  A silicon carbide or quartz boat 16 can be loaded into and withdrawn from the processing chamber 19. The boat 16 is placed on a seal cap 13 via a boat cap 15 and a base 12. 13 can airtightly close the open bottom surface of the reaction tube 2. The seal cap 13 is supported by a boat elevator 18, and the boat elevator 18 can raise and lower the boat cap 15 and the boat 16 through the seal cap 13, and the boat 16 is mounted in the processing chamber 19 by raising and lowering. It is possible to remove.

  The boat cap 15 is rotatable with respect to the base 12, and the boat cap 15 is rotatable by a rotating means 14.

  In FIG. 1, reference numeral 25 denotes a main control unit, and the main control unit 25 includes a temperature control unit 26, a gas flow rate control unit 27, a drive control unit 28, and the pressure control unit 29. The pressure control unit 29 controls the processing chamber 19 to a predetermined pressure based on a pressure detection signal from the differential pressure type pressure sensor 23 and / or a pressure detection signal from the absolute pressure detection sensor 24b.

  A detection result from the thermocouple 11 that detects the temperature of a required location in the furnace is input to the temperature control unit 26, and the temperature control unit 26 sets the processing chamber 19 to a predetermined temperature, for example, a process temperature based on the temperature detection result. The heater 10 is controlled so that The gas flow rate control unit 27 controls the reaction gas introduced from the introduction port 5 to a predetermined flow rate, and the pressure control unit 29 is input from the differential pressure type pressure sensor 23 and / or the absolute pressure detection sensor 24b. Based on the pressure, the pressure control valve 24 is controlled to control the pressure in the processing chamber 19 to a predetermined pressure, for example, a process pressure.

  The drive control unit 28 controls the rotating means 14 to rotate the boat 16 being processed at a predetermined rotational speed, and controls the boat elevator 18 to raise and lower the boat 16.

  Hereinafter, an oxidation process which is an example of a substrate process, for example, pyrogenic oxidation with water vapor will be described.

  The boat elevator 18 is driven to lower the boat 16.

  A predetermined number of wafers 17 are transferred onto the boat 16 by a wafer transfer machine (not shown). The inside of the reaction tube 2 is heated by the heater 10 via the soaking tube 1, and the temperature of the processing chamber 19 is set to a predetermined temperature based on the temperature of the processing chamber 19 detected by the thermocouple 11, for example, Controlled at 600 ° C. The processing chamber 19 is previously filled with an inert gas by being supplied with an inert gas from the inlet 5 and the conduit 6.

  Unprocessed wafers 17 are loaded into the boat 16, and the boat 16 is loaded into the reaction tube 2 by the boat elevator 18. When the boat 16 is loaded, the seal cap 13 airtightly closes the lower end opening of the reaction tube 2. The temperature of the processing chamber 19 is raised to a temperature selected from, for example, 750 ° C. to 1000 ° C. as a processing temperature, and the processing chamber is controlled by the pressure control valve 24 based on the detected pressure of the absolute pressure detection sensor 24b. The pressure of 19 is maintained at a processing pressure, for example, 950 hPa to 960 hPa.

  The rotating means 14 is driven, and the wafer 17 is rotated through the boat 16. At the same time, water vapor is supplied as a reaction gas from the gas supply pipe 3. The supplied water vapor descends the reaction tube 2 from the gas reservoir 7 through the dispersion hole 8 and is uniformly supplied to the wafer 17 to be oxidized. The exhaust gas is exhausted through the gas exhaust pipe 4 into the processing chamber 19 during the oxidation process.

  When the substrate processing is completed, the processing chamber 19 is purged with an inert gas, the boat elevator 18 is lowered by the boat elevator 18, and the processed wafers 17 are discharged.

  Unprocessed wafers 17 are transferred to the empty boat 16 and the above processing is repeated.

  Note that, up to an example, the processing conditions processed in the processing furnace of the present embodiment are as follows: in the formation of the SiO 2 film, the wafer temperature is 750 ° C., the gas species supply amount is oxygen (O 2) 8 l / min, hydrogen (H2) 8 l / min, processing pressure is 960 hPa.

  Hereinafter, the exhaust system 30 including the pressure control valve 24 will be described with reference to FIG.

  The gas exhaust pipe 4 connected to the exhaust port 9 is made of heat-resistant and corrosion-resistant synthetic resin, for example, made of fluororesin, and is connected to a duct or the like of a factory exhaust device. The exhaust system of the factory has a negative pressure of, for example, about -1000 Pa with respect to the atmosphere. The gas exhaust pipe 4 is provided with a gas cooler 31, the differential pressure sensor 23, the pressure control valve 24, a first on-off valve 32, and a first pressure detector 33 toward the downstream side. The differential pressure type pressure sensor 23 is a differential pressure type sensor and can detect a differential pressure between the processing chamber 19 and the outside air. A drain line 34 communicates with the downstream side of the gas cooler 31, and the drain line 34 is provided with a first air valve 35, a drain tank 36 as a reservoir, and a second air valve 37 toward the downstream side. A drain pipe 50 for discharging the stored liquid is connected to the tank 36. The first air valve 35, the drain tank 36, the second air valve 37, and the like constitute a liquid storage means 40. An outline of the drain tank 36 is shown in FIG.

  The drain tank 36 has a capacity capable of sufficiently storing water generated in one process, and the drain line 34 communicates with the upper and lower ends of the drain tank 36. Further, a pressure control unit drain line 43, which will be described later, communicates with the upper side of the liquid level when water generated in one process is stored.

  A bypass line 38 connects between the gas cooler 31 and the first air valve 35 in the drain line 34 and between the first on-off valve 32 and the pressure detector 33 in the gas exhaust pipe 4. The bypass line 38 is provided with a third air valve 39 and a second on-off valve 41 from the drain line 34 toward the gas exhaust pipe 4. The third air valve 39 is a normally open valve (normally open valve), which is closed when energized. The third air valve 39 is opened during a power failure so that the pressure in the processing chamber 19 is released. It has become. The third air valve 39 is opened so that the reaction tube 2 is not cracked due to overpressure when the differential pressure sensor 23 detects a pressure higher than the pressure of the outside air, and the pressure in the processing chamber 19 is increased. Is supposed to be missed.

  A required position of the gas exhaust pipe 4, in the drawing, the upstream side of the third air valve 39 in the bypass line 38 and the drain tank 36 are connected by a pressure equalizing line 42. The pressure in the processing chamber 19 and the drain tank 36 is made equal by the pressure equalization line 42, so that drainage performance is improved.

  The pressure control valve 24 and the drain tank 36 are connected by a pressure control unit drain line 43, and a fourth air valve 44 is provided in the pressure control unit drain line 43.

  An N2 supply line 45 for generating vacuum pressure is connected to the pressure control valve 24, and a pilot line 46 for driving the pressure controller is branched from the N2 supply line 45. The N2 supply line 45 is provided with a sixth air valve 53 downstream from the branch point with the pilot line 46, and the sixth air valve 53 is opened and closed by the pressure controller 29. The pilot line 46 is connected to the pressure control valve 24. The pilot line 46 is provided with a pressure regulating valve 47 and a pressure sensor 48 from the branch point to the downstream, and the pressure in the gas exhaust pipe 4 is reduced to the exhaust pressure. It is sent to the pressure control valve 24 by an atmospheric pressure detection line 49.

  Next, the operation of the exhaust system 30 associated with the substrate processing will be described with reference to FIGS.

  During substrate processing, the first on-off valve 32, the second on-off valve 41, the first air valve 35, the fourth air valve 44, and the sixth air valve 53 are opened, and the third air valve 39 and the second air valve 37 are opened. The exhaust gas exhausted from the processing chamber 19 is closed from the exhaust port 9 through the gas exhaust pipe 4 through the gas cooler 31 and the pressure control valve 24 (FIGS. 2 and 3A). It is discharged to the factory exhaust system.

  During the substrate processing, the processing pressure in the processing chamber 19 is detected by an absolute pressure detection sensor 24b. That is, the absolute pressure in the processing chamber 19 is detected by the absolute pressure detection sensor 24b. The absolute pressure detection sensor 24b has a relationship between the vacuum state generated when the sixth air valve 53 of the N2 supply line 45 is opened and a large amount of N2 flows into the vacuum generator 24a, and the pressure in the processing chamber 19. The difference, that is, the absolute pressure of the processing chamber 19 is detected.

  When the pressure control unit 29 maintains and controls the processing chamber at, for example, 950 hPa, the pressure control unit 29 determines that the pressure in the processing chamber 19 becomes 950 hPa based on the detection pressure of the absolute pressure detection sensor 24b. For example, the pressure control valve 24 is controlled. Examples of the control of the pressure control valve 24 include controlling the pilot pressure of the pilot line 46 by the pressure adjusting valve 47 and adjusting the opening degree of the valve included in the pressure control valve 24. . Since the detection pressure of the absolute pressure detection sensor 24b is based on vacuum, it is not affected even if atmospheric pressure such as weather conditions fluctuates. Accordingly, the processing pressure in the processing chamber 19 is maintained and controlled at a processing pressure of, for example, 950 hPa, regardless of atmospheric fluctuations.

  Since the differential pressure type pressure sensor 23 detects the difference between the pressure of the outside air, that is, the atmospheric pressure, the value to be detected varies depending on the weather conditions.

  In the substrate processing step, the film thickness and the film quality vary depending on the pressure in the processing chamber 19. Therefore, in order to maintain and improve the quality, the pressure in the processing chamber 19 needs to be controlled with an absolute pressure. Absolute pressure is not required for the control of the drive unit except the sequence control of the air valve, for example. Accordingly, the pressure detection for obtaining the timing for operating the pressure of the processing chamber 19 before or after the substrate processing or for operating the drive unit is executed based on the pressure detection value detected by the differential pressure sensor 23. The For example, the opening / closing timing of the drive unit such as the first air valve 35, the second air valve 37, the fourth air valve 44, and the like is executed based on the pressure detection of the differential pressure sensor 23.

  In this case, the N2 supply line 45 is closed by the sixth air valve 53, and the supply of nitrogen gas to the pressure control valve 24 is stopped. Since a large amount of nitrogen gas is used for generating a vacuum by the vacuum generator 24a, operating the vacuum generator 24a only in a substrate processing process that requires an absolute pressure reduces the consumption of nitrogen gas and reduces the running cost. Can be reduced.

  Further, during the process, the exhaust gas contains steam, and the steam is condensed by being cooled by the gas cooler 31 and is dripped and stored in the drain tank 36. At this time, water vapor in the exhaust gas that has not been condensed in the gas cooler 31 may be condensed in the pressure control valve 24, and the water condensed in the pressure control valve 24 passes through the pressure control unit drain line 43. It is stored in the drain tank 36. Since the exhaust pressure of the gas exhaust pipe 4 and the pressure in the drain tank 36 are equalized by the same pressure equalizing line 42, water from the drain line 34 and the pressure control unit drain line 43 is used. Inflow is smooth.

  When the substrate processing is completed, the processing chamber 19 is purged with nitrogen gas, the atmospheric pressure is restored based on the detected pressure value detected by the differential pressure sensor 23, and the boat 16 is lowered by the boat elevator 18. At this time, the differential pressure type pressure sensor 23 restores the atmospheric pressure not by absolute pressure but by differential pressure with the outside air, so that the pressure difference between the processing chamber 19 and the outside air can be surely equalized, It is possible to prevent the reaction tube 2 from being broken by an impact when the seal cap 13 is opened. Further, when the atmospheric pressure is restored, the first air valve 35 and the fourth air valve 44 are closed. Thereafter, the second air valve 37 is opened, and the water stored in the drain tank 36 is discharged through the second air valve 37 (FIGS. 2 and 3B). At this time, the differential pressure type pressure sensor 23 detects not the absolute pressure but the differential pressure with the outside air, and the atmospheric pressure is restored based on this differential pressure. Therefore, the differential pressure between the drain tank 36 and the outside air is surely the same. The pressure can be increased and the liquid can be drained smoothly.

  When the water in the drain tank 36 is discharged, the second air valve 37 is closed, and after the drain tank 36 is cut off (blocked) from outside air, the first air valve 35 and the fourth air valve 44 are opened. (FIG. 2, FIG. 3C). Since the inside of the drain tank 36 is made the same pressure as the exhaust pressure by the same pressure equalizing line 42, the drain line 34 and the pressure control part drain line 43 are closed when the first air valve 35 and the fourth air valve 44 are closed. The water 51 (see FIG. 3B) accumulated in the water is smoothly discharged to the drain tank 36.

  A fifth air valve 52 may be provided in the same pressure equalizing line 42. In this case, the fifth air valve 52 is configured such that the first air valve 35 and the fourth air valve 44 are closed, and the second air valve 37 is closed. It is closed before opening, and after the second air valve 37 is closed, it is opened before the first air valve 35 and the fourth air valve 44 are opened (see FIG. 4). That is, when the second air valve 37 is open, the fifth air valve 52 is closed, and when the second air valve 37 is opened, the external air pressure is applied via the pressure equalization line 42. Without affecting the processing chamber 19, it is possible to prevent outside air from flowing back through the gas exhaust pipe 4 and entering the processing chamber 19.

  The first on-off valve 32 and the second on-off valve 41 are closed in order to cut off the factory exhaust device during maintenance. Further, the pressure detector 33 detects the pressure on the factory exhaust device side so that the pressure fluctuation on the factory exhaust device side does not affect the pressure in the processing chamber 19 due to the fluctuation in pressure on the factory exhaust device side. To monitor.

  The second liquid storage means 40 will be described with reference to FIG. 5 that are the same as those shown in FIG. 2 are given the same reference numerals, and descriptions thereof are omitted.

  In the liquid storage means 40 shown in FIG. 5, the lower drain pipe 50a is connected to the drain tank 36 so as to protrude upward and the water reservoir 55 is formed in the drain tank 36. The lower end is immersed in the water reservoir 55, and when the second air valve 37 is opened, the outside air is prevented from flowing back from the lower drain pipe 50a to the upper drain pipe 50b. It is. Note that the upper end of the lower drain pipe 50a is cut obliquely to prevent surface tension from being generated at the upper end of the lower drain pipe 50a, making it difficult for water to flow.

  The third liquid storage means 40 will be described with reference to FIG. The third liquid storage means 40 includes two upper drain tanks 36a and a lower drain tank 36b.

  An upper drain pipe 50b of a drain line 34 is connected to the upper drain tank 36a, the lower drain tank 36b is connected to the upper drain tank 36a via an intermediate drain pipe 50c, and the intermediate drain pipe 50c is connected to the upper drain tank 36a. A first air valve 35 is provided. A pressure control unit drain line 43 is connected to the upper drain tank 36a.

  The lower end of the intermediate drain pipe 50c reaches near the bottom surface of the lower drain tank 36b. The upper portion of the lower drain pipe 50a protrudes through the bottom surface of the lower drain tank 36b, and a water reservoir 55 for storing liquid is formed at the bottom of the lower drain tank 36b. The lower end of the intermediate drain pipe 50c is immersed in the portion 55. A second air valve 37 is provided below the water reservoir 55 of the lower drain pipe 50a. Further, a pressure equalizing line 42 is connected to the lower drain tank 36b.

  By forming the water reservoir 55, when the second air valve 37 is opened, outside air does not flow back from the lower drain pipe 50a to the intermediate drain pipe 50c and the upper drain pipe 50b. . When it is known that a large pressure difference does not occur between the pressure in the gas exhaust pipe 4 and the external pressure, the backflow prevention function of the water reservoir 55 is sufficient, and the second air valve 37 is Can be omitted.

(Appendix)
The present invention includes the following embodiments.

  (Supplementary Note 1) A processing chamber for processing a substrate, a gas supply line for supplying a processing gas to the processing chamber, an exhaust line for exhausting the processing gas in the processing chamber, and the processing gas provided in the exhaust line. A liquid storage device for storing the liquefied material therein, a first on-off valve provided on the upstream side of the liquid storage device for opening and closing between the main line of the exhaust line and the liquid storage device, and the liquid storage device A second on-off valve provided on the further downstream side for opening and closing the liquefied material from the liquid storage device so as to be able to control discharge; and a pressure control means for controlling the pressure of the processing chamber provided in the exhaust line; An absolute pressure type pressure detecting means provided in the exhaust line for detecting the pressure in the processing chamber with an absolute pressure, and a differential pressure type pressure provided in the exhaust line for detecting the pressure in the processing chamber with a differential pressure from the outside air. And when the substrate is processed, When the second on-off valve is closed while controlling the pressure control means based on the detection value detected by the absolute pressure type pressure detection means and the liquefied material is discharged, the detection detected by the differential pressure type pressure detection means The substrate processing apparatus, wherein after the first on-off valve is closed based on the value, the second on-off valve is controlled to be opened.

It is a section schematic diagram showing a processing furnace used for an embodiment of the invention. It is explanatory drawing of the exhaust system in embodiment of this invention. (A), (B), and (C) are explanatory views of the liquid storage means in the exhaust system. It is a timing diagram which shows opening and closing of the valve | bulb in this liquid storage means. It is sectional drawing which shows a 2nd storage means. It is sectional drawing which shows a 3rd storage means. It is explanatory drawing which shows a prior art example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Soaking | uniform-heating pipe | tube 2 Reaction pipe | tube 3 Gas supply pipe | tube 4 Gas exhaust pipe 5 Inlet port 9 Exhaust port 19 Processing chamber 23 Differential pressure type pressure sensor 24 Pressure control valve 24a Vacuum generator 24b Absolute pressure detection sensor 25 Main control part 29 Pressure control part 34 Drain line 35 First air valve 36 Drain tank 37 Second air valve 38 Bypass line 42 Pressure equalization line 44 Fourth air valve 45 N2 supply line

Claims (1)

  A processing chamber for processing a substrate, a gas supply line for supplying a processing gas to the processing chamber, an exhaust line for exhausting the processing gas in the processing chamber, and an exhaust line for storing a liquefied material in the processing gas A liquid storage device that is provided downstream of the liquid storage device, a drain line that discharges liquefied material from the liquid storage device to the outside, and an exhaust line that controls the pressure in the processing chamber. A pressure control means; an absolute pressure detection means provided in the exhaust line for detecting the pressure of the processing chamber by an absolute pressure; and a pressure control means provided in the exhaust line for detecting the pressure of the processing chamber by a differential pressure from outside air. A differential pressure detecting means, and when processing a substrate, the drain control line is not in communication with the outside while controlling the pressure control means based on the detected value detected by the absolute pressure detecting means, When discharging the liquefied material, the differential pressure detection A substrate processing apparatus and the drain line and the outside based on a detection value detected by the stage and controls so as to be a state of communicating.

Images