JP2008210852A - Substrate treating equipment and method of manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To enhance throughput while using an inexpensive oxygen concentration measuring instrument by measuring the oxygen concentration of a load lock chamber under a state of reduced pressure in substrate treating equipment equipped with a load lock chamber. <P>SOLUTION: The substrate treating equipment comprises a chamber 1 for treating a substrate 8, a spare chamber 2 connected airtightly to the treating chamber, an exhaust path 15 interconnected with the spare chamber and an exhaust means 13 and at least a portion of which can be isolated airtightly, and an oxygen concentration measuring means 14 connected to the isolable portion 18 of the exhaust path. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus for performing a required process such as CVD, dry etching, sputtering, etc., on a substrate to be processed such as a silicon wafer, and more particularly to a substrate processing apparatus having a spare chamber connected to a processing chamber and the substrate. The present invention relates to a method for manufacturing a semiconductor device using a processing apparatus.

  There is a substrate processing apparatus as an apparatus for manufacturing a semiconductor device by performing required processes such as CVD, dry etching, sputtering, etc. on a substrate such as a silicon wafer, and the substrate processing apparatus is a single wafer type substrate processing apparatus that processes substrates one by one. Alternatively, there is a batch type substrate processing apparatus that processes a predetermined number of sheets at a time.

  In a batch type substrate processing apparatus, a predetermined number of substrates (hereinafter referred to as wafers) are held in a multi-stage in a horizontal posture by a substrate holder (hereinafter referred to as boats), and the boats are processed in a processing chamber by a boat loading / unloading means (hereinafter referred to as boat elevators). The boat is stored in the processing chamber by the boat elevator and the wafer is held in the boat, and the necessary processing is performed. After the processing, the boat is moved by the boat elevator. It is pulled out from the processing chamber.

  In addition, there is a substrate processing apparatus having an airtight preliminary chamber (hereinafter referred to as a load lock chamber) in order to prevent natural oxidation of the wafer during the process of loading and unloading the boat into and from the processing chamber. The load lock chamber is hermetically connected to the processing chamber, and the processing chamber and the load lock chamber can be hermetically isolated by a gate valve.

  In the load lock chamber, the inside of the load lock chamber is evacuated to discharge oxygen and water in the atmosphere to reduce the oxygen concentration, and when the pressure inside the load lock chamber is returned or returned to atmospheric pressure, an inert gas, For example, nitrogen gas is supplied to suppress an increase in the oxygen concentration in the load lock chamber.

  When processing a wafer, a cycle purge in which the above-described evacuation and supply of inert gas are repeatedly performed on the load lock chamber isolated from the processing chamber is performed, and the oxygen concentration in the load lock chamber is reduced. Measured, in a state where the oxygen concentration is below a predetermined level, the processing chamber communicates with the load lock chamber, the wafer loaded in the boat is loaded into the processing chamber together with the boat, the wafer is heated, In addition, processing gas is introduced to perform the required processing.

  If the boat is loaded and unloaded while the processing chamber and the load lock chamber are in a reduced pressure state, the time for returning the processing chamber and the load lock chamber to atmospheric pressure can be omitted, and throughput can be improved. .

  However, in order to detect the oxygen concentration in a reduced pressure state, an expensive oxygen concentration measuring device is required, and the substrate processing apparatus itself is expensive.

JP-A-4-280626

  In view of such circumstances, the present invention is a substrate processing apparatus equipped with a load lock chamber, wherein the oxygen concentration in the load lock chamber is measured at normal pressure in a reduced pressure state, and an inexpensive oxygen concentration measuring device is used. And to improve the throughput.

  The present invention relates to a processing chamber for processing a substrate, a spare chamber connected to the processing chamber in an airtight manner, an exhaust passage that communicates with the spare chamber and communicates with an exhaust means, and at least a part of which is airtightly isolated. And an oxygen concentration measuring means connected to a separable portion of the exhaust passage, and a substrate processing apparatus having an inert gas supply means connected to the separable portion It is.

  The present invention also provides a processing chamber for processing a substrate, a spare chamber connected to the processing chamber in an airtight manner and capable of storing the substrate, a first exhaust passage communicating with the spare chamber, and the spare chamber. A second exhaust path that is at least partially airtightly separable, the first exhaust path, an exhaust means for exhausting the spare chamber via the second exhaust path, and a separable part of the second exhaust path In a substrate processing apparatus, comprising: an inert gas supply means for supplying an inert gas to the substrate; and an oxygen concentration measurement means connected to a separable portion of the second exhaust passage. Exhausting the preliminary chamber through the first exhaust path and the second exhaust path, isolating the second exhaust path in an airtight manner, and supplying an inert gas to the second exhaust path; A step of measuring the oxygen concentration in the second exhaust passage, and the oxygen concentration in the second exhaust passage is less than or equal to a predetermined value. In this case, the present invention relates to a method for manufacturing a semiconductor device, comprising: a step of inserting a substrate into the processing chamber through communication between the processing chamber and the spare chamber; and a step of processing the substrate in the processing chamber. .

  According to the present invention, a processing chamber for processing a substrate, a spare chamber connected to the processing chamber in an airtight manner, a communication with the preliminary chamber and an exhaust means, and at least a part thereof can be airtightly isolated. Since the exhaust passage and the oxygen concentration measuring means connected to the separable portion of the exhaust passage are provided, the oxygen concentration measurement may be performed on a small volume of the separation portion, and return to atmospheric pressure, evacuation, etc. It can be executed in a short time and throughput is improved.

  According to the present invention, a processing chamber for processing a substrate, a spare chamber connected to the processing chamber in an airtight manner and capable of storing a substrate, a first exhaust path communicating with the spare chamber, and the spare chamber A second exhaust path that is communicated and can be at least partially hermetically isolated, an exhaust means for exhausting the preliminary chamber through the first exhaust path and the second exhaust path, and the second exhaust path can be isolated. In a substrate processing apparatus, comprising: an inert gas supply means for supplying an inert gas to such a portion; and an oxygen concentration measurement means connected to a separable portion of the second exhaust passage. Exhausting the spare chamber through the first exhaust path and the second exhaust path, isolating the second exhaust path in an airtight manner, and supplying an inert gas to the second exhaust path Measuring the oxygen concentration of the second exhaust passage, and the oxygen concentration of the second exhaust passage being a predetermined value Since the process chamber and the auxiliary chamber are communicated with each other in the case of lowering, the substrate is loaded into the process chamber, and the substrate is processed in the process chamber. It can be executed quickly and exhibits excellent effects such as improved throughput.

  The best mode for carrying out the present invention will be described below with reference to the drawings.

  First, an outline of a substrate processing apparatus according to the present invention will be described with reference to FIG.

  The processing furnace 1 is connected to the upper side of the load lock chamber 2 in an airtight manner, a processing chamber is defined inside the processing furnace 1, and a lower end opening of the processing chamber forms a furnace port. The mouth is airtightly closed by the furnace gate valve 3 and can be opened.

  The processing furnace 1 can be supplied with a gas such as a processing gas and a purge gas, and is connected to an exhaust means having a vacuum pump or the like so that the processing chamber can be exhausted.

  Inside the load lock chamber 2, a boat elevator 4, which is a boat lifting mechanism, is provided. A lifting arm 5 extends horizontally from the boat elevator 4, and a seal cap 6 is supported by the lifting arm 5. A boat 7 as a substrate holder is supported on the seal cap 6. The boat 7 holds substrates (hereinafter referred to as wafers) 8 in a horizontal posture in multiple stages.

  A gas supply pipe 9 is connected to the load lock chamber 2, and an inert gas such as nitrogen gas is supplied to the load lock chamber 2 through the gas supply pipe 9.

  A first exhaust pipe 11 is connected to the load lock chamber 2, and the first exhaust pipe 11 is connected to an exhaust means 13 having a vacuum pump or the like via a first valve 12. The exhaust means 13 is provided with an oxygen concentration detection means 14.

  The oxygen concentration detection means 14 will be described.

  A second exhaust pipe 15, which is a bypass passage branched from the first exhaust pipe 11 and joined again, is provided upstream of the exhaust means 13, and the second valve 16 is provided upstream of the branch point of the second exhaust pipe 15. A third valve 17 is provided on the downstream side of the junction. A sampling unit 18 is provided between the second valve 16 and the third valve 17 of the second exhaust pipe 15, and the sampling unit 18 is opened and closed by opening and closing the second valve 16 and the third valve 17. 1 It is possible to isolate the exhaust pipe 11 in an airtight manner.

  An oxygen concentration detection tube 19 communicates with the sampling unit 18, and an oxygen concentration detector 21 is provided in the oxygen concentration detection tube 19. The oxygen concentration detection pipe 19 is provided with a fourth valve 22 and a fifth valve 23 on the upstream side (suction path) and the downstream side (discharge path) of the oxygen concentration detector 21, respectively. The sampling unit 18 is connected with a nitrogen gas supply pipe 24 for supplying an inert gas, for example, nitrogen gas, and a pressure detector 25 for detecting the pressure inside the sampling unit 18. The detection result of the pressure detector 25 and the detection result of the oxygen concentration detector 21 are sent to the control device 65, respectively.

  Next, an example of the processing furnace 1 will be described with reference to FIG.

  The processing furnace 1 has a heater 38 as a heating means. The heater 38 has a cylindrical shape and is vertically installed by being supported by a heater base 39 as a holding plate.

  Inside the heater 38, a process tube 41 as a reaction tube is disposed concentrically with the heater 38. The process tube 41 includes an internal reaction tube 42 and an external reaction tube 43 provided concentrically on the outside thereof.

  The inner reaction tube 42 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC), and has a cylindrical shape with upper and lower ends opened, and the outer reaction tube 43 is formed of quartz or silicon carbide, for example. It has a cylindrical shape with a top end closed and a bottom end open.

  A processing chamber 44 is defined inside the internal reaction tube 42, and the wafer 8 is held by the boat 7 and can be accommodated in the processing chamber 44. The boat 7 is made of a heat-resistant material such as quartz or silicon carbide, and is configured to hold a predetermined number of wafers 8 in a horizontal posture and in a state where their centers are aligned and held in multiple stages. In the lower part of the boat 7, a plurality of heat insulating plates 31 as a heat insulating member having a disk shape made of a heat resistant material such as quartz or silicon carbide are arranged in multiple stages in a horizontal posture. It is configured so that the heat from the heat is not easily transmitted to the manifold 45 side.

  Below the external reaction tube 43, the manifold 45 is disposed concentrically with the external reaction tube 43. The manifold 45 is made of, for example, stainless steel and has a cylindrical shape with an upper end and a lower end opened. The external reaction tube 43 is installed upright on the upper end of the manifold 45 and protrudes from the inner wall of the manifold 45. The inner reaction tube 42 is erected on the inner flange 46 formed. A reaction vessel is formed by the process tube 41 and the manifold 45.

  The seal cap 6 is provided with a nozzle 50 as a gas introducing portion so as to communicate with the processing chamber 44, and a gas supply pipe 47 is connected to the nozzle 50. A processing gas supply source and an inert gas supply source (not shown) are connected to the gas supply pipe 47 through a gas flow rate controller 48. A gas flow rate controller 49 is electrically connected to the gas flow rate controller 48, and is configured to control at a desired timing so that the flow rate of the supplied gas becomes a desired amount.

  The manifold 45 is provided with an exhaust pipe 51 for exhausting the atmosphere of the processing chamber 44. The exhaust pipe 51 communicates with a lower end portion of a cylindrical space 52 formed between the internal reaction pipe 42 and the external reaction pipe 43. A vacuum exhaust device 55 such as a vacuum pump is connected to the exhaust pipe 51 via a pressure sensor 53 and a pressure adjusting device 54, and vacuum exhaust is performed so that the pressure in the processing chamber 44 becomes a predetermined pressure (degree of vacuum). It is configured to be able to.

  A pressure control unit 56 is electrically connected to the pressure adjustment device 54 and the pressure sensor 53, and the pressure control unit 56 is controlled by the pressure adjustment device 54 based on the pressure detected by the pressure sensor 53. It is configured to control at a desired timing so that the pressure in the processing chamber 44 becomes a desired pressure.

  The lower end opening of the manifold 45 forms a furnace port, and the furnace port can be hermetically closed by the seal cap 6. The seal cap 6 is made of a metal such as stainless steel and is formed in a disk shape. A rotation mechanism 57 that rotates the boat 7 is installed on the lower surface side of the seal cap 6. A rotating shaft 58 of the rotating mechanism 57 passes through the seal cap 6 and is connected to a boat pedestal 59, and is configured to rotate the wafer 8 by rotating the boat 7. The seal cap 6 is configured to be lifted and lowered in the vertical direction by the boat elevator 4, whereby the boat 7 can be loaded into and withdrawn from the processing chamber 44. A drive control unit 60 is electrically connected to the furnace port gate valve 3, the second valve 16, the third valve 17, the fourth valve 22, the fifth valve 23, the rotating mechanism 57, and the boat elevator 4. And is configured to control at a desired timing so as to perform a desired operation.

  In the cylindrical space 52, a temperature sensor 62 is erected from the lower part to the upper part of the internal reaction tube 42. A temperature control unit 63 is electrically connected to the heater 38 and the temperature sensor 62, and the temperature control unit 63 determines an energization state to the heater 38 based on temperature information detected by the temperature sensor 62. By adjusting the temperature, the temperature of the processing chamber 44 is controlled to have a desired temperature distribution.

  The gas flow rate control unit 49, the pressure control unit 56, the drive control unit 60, and the temperature control unit 63 also constitute an operation unit and an input / output unit, and are electrically connected to the main control unit 64 that controls the entire substrate processing apparatus. Connected. The gas flow rate control unit 49, the pressure control unit 56, the drive control unit 60, the temperature control unit 63, and the main control unit 64 are configured as the control device 65.

  Next, a method of forming a thin film on the wafer 8 by the CVD method as one step of the semiconductor device manufacturing process using the processing furnace 1 having the above configuration will be described. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by the control device 65.

  The furnace port gate valve 3 hermetically closes the processing chamber 44, and the processing chamber 44 is sealed in a predetermined negative pressure state.

  A gate valve (not shown) provided in the load lock chamber 2 is opened, and a predetermined number of wafers 8 are loaded into the boat 7. The gate valve is closed, and the load lock chamber 2 is sealed in a state of being isolated from the processing chamber 44.

  With the first valve 12, the second valve 16, and the third valve 17 opened, and with the fourth valve 22 and the fifth valve 23 closed, the exhaust means 13 performs the load. The lock chamber 2 is evacuated and decompressed. Next, the second valve 16 and the third valve 17 are closed, and the sampling unit 18 is isolated from the load lock chamber 2 and the first exhaust pipe 11 in an airtight state.

  Nitrogen gas is introduced from the nitrogen gas supply pipe 24 to return the sampling unit 18 to atmospheric pressure. Whether the pressure has been restored is determined by the pressure detected by the pressure detector 25.

  The fourth valve 22 and the fifth valve 23 are opened, and the oxygen concentration detector 21 measures whether the oxygen concentration in the sampling unit 18 is equal to or lower than a predetermined value.

  The oxygen concentration of the sampling unit 18 is the oxygen concentration of the load lock chamber 2, and when the oxygen concentration detector 21 measures the oxygen concentration below a predetermined value, the oxygen concentration of the load lock chamber 2 is a predetermined value. It is determined that

  If the measurement result by the sampling unit 18 does not reach a predetermined value, the fourth valve 22 and the fifth valve 23 are closed, and the load lock chamber 2 is further evacuated.

  First, the third valve 17 is opened, the inside of the sampling unit 18 is evacuated by the exhaust means 13, and then the second valve 16 is opened, and the first exhaust pipe 11 and the second exhaust pipe 15 are opened. The load lock chamber 2 is evacuated through

  After the evacuation is performed, when the sampling unit 18 is further hermetically isolated by the second valve 16 and the third valve 17, nitrogen gas is supplied to the sampling unit 18. The valve 22 and the fifth valve 23 are opened, and the oxygen concentration is measured by the oxygen concentration detector 21.

  When the oxygen concentration in the sampling unit 18 is measured to be equal to or lower than a predetermined value, the furnace gate valve 3 is opened, and the boat 7 is loaded into the processing chamber 44 by the boat elevator 4. In this state, the seal cap 6 hermetically closes the furnace port.

  The processing chamber 44 is evacuated by the evacuation device 55 so that a desired pressure (degree of vacuum) is obtained. At this time, the pressure in the processing chamber 44 is detected by the pressure sensor 53, and the pressure adjusting device 54 feedback-controls the pressure in the processing chamber 44 based on the detection result.

  Further, the processing chamber 44 is heated by the heater 38 so as to reach a desired temperature. At this time, the power supply to the heater 38 is feedback-controlled based on the temperature information detected by the temperature sensor 62 so that the processing chamber 44 has a desired temperature distribution. Subsequently, the boat 7 is rotated by the rotation mechanism 57. The wafer 8 is rotated integrally with the boat 7, and the processing for the wafer 8 is made uniform.

  Next, a processing gas is supplied from a processing gas supply source (not shown), and the gas controlled to have a desired flow rate by the gas flow rate controller 48 flows through the gas supply pipe 47 and passes through the gas supply pipe 47. It is introduced into the processing chamber 44 from the nozzle 50. The introduced gas ascends in the processing chamber 44, turns back at the upper end opening of the internal reaction tube 42, flows down the cylindrical space 52, and is exhausted from the exhaust pipe 51. The gas contacts the surface of the wafer 8 when passing through the processing chamber 44, and a thin film is formed on the surface of the wafer 8 by a thermal CVD reaction.

  When a preset processing time elapses, an inert gas is supplied from an inert gas supply source (not shown), the processing chamber 44 is replaced with the inert gas, and the pressure in the processing chamber 44 is constantly maintained. Return to pressure.

  The boat 7 is lowered by the boat elevator 4 through the seal cap 6.

  The unloading of the processed wafer 8 after processing is as described above.

  As an example, the processing conditions for processing a wafer in the processing furnace of the present embodiment include, for example, a processing temperature of 500 ° C., a processing pressure of 200 Pa, and a gas type in the formation of a Poly-Si film. SiH4 and a gas supply flow rate of 2000 sccm are exemplified, and the wafer is processed by keeping each processing condition constant at a certain value within each range.

  As described above, in the substrate processing step, there is a step of reducing the pressure of the load lock chamber 2 to a predetermined oxygen concentration or less. In the present invention, the atmosphere of the load lock chamber 2 is sampled by the sampling unit 18. Then, the sampling unit 18 is returned to atmospheric pressure with an inert gas, and the oxygen concentration is measured.

  Therefore, the oxygen concentration detector 21 may be for normal pressure, and an inexpensive oxygen concentration detector 21 can be used. The sampling unit 18 is a limited part of the piping, and the flow rate of the inert gas necessary for returning to the atmospheric pressure may be small, and the atmospheric pressure can be returned in a short time.

  For example, when the volume of the load lock chamber 2 of the substrate processing apparatus for processing a wafer 8 having a diameter of 300 mm is 800 L, the volume of the sampling unit 18 may be about 10 L, and the atmospheric pressure is restored with nitrogen gas at the same flow rate. This time can be reduced to 1/80, and the throughput can be greatly reduced.

  In addition, not only oxygen concentration but the density | concentration detection about various gas is possible, For example, it is the same also about water concentration.

  FIG. 3 shows a second embodiment. In the second embodiment, the second exhaust pipe 15 is not branched from the first exhaust pipe 11 but directly communicated with the load lock chamber 2. is there.

  FIG. 4 shows a third embodiment. In the third embodiment, the exhaust means 13 includes an exhaust device 13a and an exhaust device 13b, and the exhaust device 13a, The exhaust device 13b is individually connected to the second exhaust pipe 15, and exhaust is individually performed by the exhaust device 13a and the exhaust device 13b.

  FIG. 5 shows a fourth embodiment. In the fourth embodiment, the second exhaust pipe 15 is not branched from the first exhaust pipe 11 in the third embodiment. It is in direct communication with the load lock chamber 2.

  Further, the oxygen concentration detector 21 may be provided directly between the second valve 16 and the third valve 17 of the second exhaust pipe 15. By providing directly, the oxygen concentration detection pipe | tube 19, the 4th valve | bulb 22, and the 5th valve | bulb 23 are omissible.

  In the above-described embodiment, a part of the second exhaust pipe 15 is the sampling unit 18, but a chamber as the sampling unit 18 may be provided in the middle of the second exhaust pipe 15.

  The present invention is not limited to a substrate processing apparatus for a semiconductor device, but can be implemented as long as the substrate processing apparatus includes a load lock chamber 2. For example, the present invention can also be applied to a substrate processing apparatus for manufacturing an LCD device. It can also be applied to a horizontal substrate processing apparatus. Needless to say, substrate processing can be applied to all processing using gas.

(Appendix)
The present invention includes the following embodiments.

  (Appendix 1) A processing chamber for processing a substrate, a spare chamber provided adjacent to the processing chamber, an exhaust passage for exhausting the spare chamber, a bypass passage for bypassing the exhaust passage, and at least one of the bypass passages A first and second opening / closing means provided in the bypass path for isolating a part from the exhaust path, and a bypass path between the first opening / closing means and the second opening / closing means. A substrate processing apparatus comprising an oxygen concentration measuring means.

  (Supplementary note 2) The substrate processing apparatus according to supplementary note 1, wherein a capacity of a space enclosed by the first and second opening / closing means in the bypass path is smaller than a capacity in the spare chamber.

  (Supplementary note 3) The substrate according to supplementary note 1, wherein the oxygen concentration measuring means has a suction passage and an exhaust passage connected to the bypass passage, and third and fourth opening / closing means are provided in the suction passage and the exhaust passage, respectively. Processing equipment.

  (Additional remark 4) If the measurement result of the said oxygen concentration measuring means is below a predetermined oxygen concentration, it further comprises the control means which controls so that the gate valve which isolates the said process chamber and the said preliminary | backup chamber may be opened. Substrate processing equipment.

  (Additional remark 5) The substrate processing apparatus of additional remark 1 which opens the gate valve which isolates the said process chamber and the said preliminary | backup chamber if the measurement result of the said oxygen concentration measurement means is below a predetermined oxygen concentration.

  (Appendix 6) A step of opening first and second opening / closing means provided in the bypass passage to isolate at least a part of the bypass passage bypassing the exhaust passage from the exhaust passage; An inert gas supply connected to a bypass path between the first opening and closing means and the second opening and closing means; and a step of exhausting from the bypass path, a step of closing the first and second opening and closing means Means for supplying an inert gas into the bypass passage by means, and oxygen concentration measuring means connected to the bypass passage between the first opening and closing means and the second opening and closing means. A step of measuring the concentration, a step of opening a processing chamber provided adjacent to the preliminary chamber by opening a gate valve, a step of loading a substrate into the processing chamber, and a step of processing the substrate in the processing chamber And have The method of manufacturing a semiconductor device according to claim Rukoto.

It is a schematic block diagram which shows the outline of the substrate processing apparatus which concerns on embodiment of this invention. It is sectional drawing which shows an example of the processing furnace used for this substrate processing apparatus. It is explanatory drawing which shows the principal part of 2nd Embodiment. It is explanatory drawing which shows the principal part of 3rd Embodiment. It is explanatory drawing which shows the principal part of 4th Embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Processing furnace 2 Load lock chamber 3 Furnace gate valve 4 Boat elevator 7 Boat 8 Wafer 11 1st exhaust pipe 13 Exhaust means 14 Oxygen concentration detection means 15 2nd exhaust pipe 18 Sampling part 19 Oxygen concentration detection pipe 21 Oxygen concentration detector 24 Nitrogen gas supply pipe

Claims (3)

  A processing chamber for processing a substrate; a preliminary chamber connected in an airtight manner to the processing chamber; an exhaust passage communicating with the preliminary chamber and in communication with an exhaust means; A substrate processing apparatus comprising: an oxygen concentration measuring means connected to a separable portion of the path.   The substrate processing apparatus according to claim 1, wherein an inert gas supply means is connected to the separable portion.   A processing chamber for processing the substrate; a spare chamber that is hermetically connected to the processing chamber and capable of storing the substrate; a first exhaust passage that communicates with the spare chamber; and the spare chamber. A second exhaust path that can be airtightly isolated, an exhaust means that exhausts the preliminary chamber through the first exhaust path and the second exhaust path, and an inert gas in the separable portion of the second exhaust path In a substrate processing apparatus comprising an inert gas supply means for supplying and an oxygen concentration measuring means connected to a separable portion of the second exhaust passage, the preliminary chamber isolated from the processing chamber is the first chamber. A step of exhausting through one exhaust passage, the second exhaust passage, a step of airtightly isolating the second exhaust passage, a step of supplying an inert gas to the second exhaust passage, and the second exhaust passage The step of measuring the oxygen concentration of the gas and when the oxygen concentration of the second exhaust passage is below a predetermined value A step of loading a substrate to serial processing chamber and said reserve chamber into the processing chamber in communication, a method of manufacturing a semiconductor device characterized by a step of treating the substrate in the processing chamber.

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