JP2007073880A5 - - Google Patents

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JP2007073880A5
JP2007073880A5 JP2005262122A JP2005262122A JP2007073880A5 JP 2007073880 A5 JP2007073880 A5 JP 2007073880A5 JP 2005262122 A JP2005262122 A JP 2005262122A JP 2005262122 A JP2005262122 A JP 2005262122A JP 2007073880 A5 JP2007073880 A5 JP 2007073880A5
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Japan
Prior art keywords
liquid storage
pressure
processing chamber
storage means
processing
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JP2005262122A
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Japanese (ja)
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JP4813854B2 (en
JP2007073880A (en
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Priority claimed from JP2005262122A external-priority patent/JP4813854B2/en
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Publication of JP2007073880A5 publication Critical patent/JP2007073880A5/ja
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基板を処理する処理室と、該処理室に処理ガスを供給するガス供給ラインと、前記処理室の処理ガスを排気する排気ラインと、該排気ラインに設けられ、処理ガス中の液化物を貯溜する貯液手段と、該貯液具より下流側に設けられ、前記貯液手段からの液化物を外部に排出する排液ラインと、前記排気ラインに設けられ、前記処理室の圧力を制御する圧力制御手段と、前記排気ラインに設けられ、前記処理室の圧力を絶対圧で検出する絶対圧検出手段と、前記排気ラインに設けられ、前記処理室の圧力を外気との差圧で検出する差圧検出手段と、前記処理室で基板を処理する際は、前記絶対圧検出手段の検出する検出値に基づき前記圧力制御手段を制御しつつ前記貯液手段と前記外部とを連通しない状態となる様に前記貯液手段を制御し、前記貯液手段に貯溜された液化物を排出する際には、前記差圧検出手段の検出する検出値に基づき前記排液ラインと外部とが連通する状態となる様に前記貯液手段を制御する制御部とを特徴とする基板処理装置。 A processing chamber for processing a substrate, a gas supply line for supplying a processing gas to the processing chamber, an exhaust line for exhausting the processing gas in the processing chamber, and an exhaust line for storing a liquefied material in the processing gas Liquid storage means , a drain line provided on the downstream side of the liquid storage device for discharging the liquefied material from the liquid storage means to the outside, and an exhaust line for controlling the pressure in the processing chamber. A pressure control means, an absolute pressure detection means provided in the exhaust line for detecting the pressure in the processing chamber by an absolute pressure, and a pressure control means provided in the exhaust line for detecting the pressure in the processing chamber by a differential pressure from the outside air; a differential pressure detecting means, when processing a substrate in the processing chamber, a state of not communicating the said liquid storage means external while controlling said pressure control means based on a detection value detected by the absolute pressure detecting means consisting of said liquid storage means to control as, before When discharging the reservoir has been liquefied material in the liquid storage means, said drain line and the outside based on a detection value detected by the differential pressure detection means for controlling said liquid storage means so as to be a state in communication A substrate processing apparatus characterized by a control unit . ガス供給ラインから処理室へ供給された処理ガスを排気する排気ラインに設けられた絶対圧検出手段が検出する検出値に基づき、前記排気ラインに設けられた貯液手段と外部とを連通しない状態となる様に前記貯液手段を制御し、圧力制御手段で前記処理室の圧力を制御しつつ前記処理室で基板を処理する工程と、Based on the detection value detected by the absolute pressure detection means provided in the exhaust line for exhausting the processing gas supplied from the gas supply line to the processing chamber, the liquid storage means provided in the exhaust line is not in communication with the outside Controlling the liquid storage means so that the substrate is processed in the processing chamber while controlling the pressure in the processing chamber with the pressure control means;
前記排気ラインに設けられた差圧検出手段で前記処理室の圧力を外気との差圧で検出する検出値に基づき、前記貯液手段と外部とが連通する状態となる様に前記貯液手段を制御し、前記貯液手段に貯溜された前記処理ガス中の液化物を前記外部へ排出する工程とを有する半導体の製造方法。The liquid storage means is arranged so that the liquid storage means communicates with the outside based on a detection value detected by the differential pressure detection means provided in the exhaust line with the pressure difference between the processing chamber and the outside air. And a step of discharging the liquefied material in the processing gas stored in the liquid storage means to the outside.


JP2005262122A 2005-09-09 2005-09-09 Substrate processing apparatus and semiconductor manufacturing method Active JP4813854B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005262122A JP4813854B2 (en) 2005-09-09 2005-09-09 Substrate processing apparatus and semiconductor manufacturing method

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Application Number Priority Date Filing Date Title
JP2005262122A JP4813854B2 (en) 2005-09-09 2005-09-09 Substrate processing apparatus and semiconductor manufacturing method

Publications (3)

Publication Number Publication Date
JP2007073880A JP2007073880A (en) 2007-03-22
JP2007073880A5 true JP2007073880A5 (en) 2008-10-16
JP4813854B2 JP4813854B2 (en) 2011-11-09

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ID=37935045

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JP2005262122A Active JP4813854B2 (en) 2005-09-09 2005-09-09 Substrate processing apparatus and semiconductor manufacturing method

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JP (1) JP4813854B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100883768B1 (en) * 2008-08-22 2009-02-18 주식회사 미래보 Apparatus for protecting over-flow of reactive gas into liquid collector in manufacturing process of semi-conductors
JP6342370B2 (en) * 2015-09-07 2018-06-13 株式会社東芝 Semiconductor manufacturing apparatus and removal apparatus for semiconductor manufacturing apparatus
JP7175782B2 (en) * 2019-01-25 2022-11-21 株式会社東芝 Silicon-containing material forming device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3592923B2 (en) * 1998-02-13 2004-11-24 東京エレクトロン株式会社 Exhaust device
JP3396431B2 (en) * 1998-08-10 2003-04-14 東京エレクトロン株式会社 Oxidation treatment method and oxidation treatment device
JP3543949B2 (en) * 1999-11-09 2004-07-21 東京エレクトロン株式会社 Heat treatment equipment
JP3554847B2 (en) * 2001-07-30 2004-08-18 東京エレクトロン株式会社 Heat treatment equipment
JP2003318172A (en) * 2002-04-19 2003-11-07 Tokyo Electron Ltd Film forming method, deducing method for film forming and processing time correction expression, film forming device, and program

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