JP2007067300A - Light emitting device and method of manufacturing same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device capable of preventing the invasion of moisture from sealing glass and a boundary surface between the sealing glass and a substrate, wiring metal, and to provide a method of manufacturing the same. <P>SOLUTION: The light emitting device 1 comprises wiring 4 which is formed on the substrate 2, and including a first glass component, an LED 3 to be electrically connected to the wiring 4, and the sealing glass 7 for sealing the LED 3. The sealing glass 7, the substrate 2, and the wiring 4 are connected with an adhesive 8 containing a second glass component. When the first glass component is the same as the second glass component, it is preferable that their softening points are higher than the softening point of the sealing glass 7. When the first glass component is different from the second glass component, it is preferable that the following relation is satisfied, i.e., T<SB>1</SB>>T<SB>2</SB>>T<SB>3</SB>among the softening point T<SB>1</SB>of the first glass component, the softening point T<SB>2</SB>of the second glass component, and the softening point T<SB>3</SB>of the sealing glass 7. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a light emitting device and a method for manufacturing the same, and more particularly to a light emitting device in which a light emitting element is sealed with glass and a method for manufacturing the same.

  Currently, lighting devices using white light emitting diodes (hereinafter referred to as LEDs) as light emitting elements are being put into practical use. Advantages of using white LEDs for lighting are: 1) lower power consumption and lower running costs compared to incandescent and fluorescent lamps, 2) long life, saving time for replacement, and 3) miniaturization 4) Do not use harmful substances such as mercury in fluorescent lamps.

  A general white LED has a structure in which the LED is sealed with a resin. For example, in a typical one-chip white LED, an LED having a light emitting layer of InGaN in which In is added to GaN is sealed with a resin containing a YAG phosphor. When current is passed through the LED, blue light is emitted from the LED. Next, the YAG phosphor is excited by part of the blue light, and yellow light is emitted from the phosphor. Since blue light and yellow light are in a complementary color relationship, when they are mixed, they are recognized as white light by human eyes.

  However, in a resin-sealed LED, moisture penetrates into the resin due to long-term use, and the operation of the LED is hindered, or the resin is discolored by ultraviolet rays emitted from the LED, and the light transmittance of the resin is reduced. There were problems such as lowering.

  Further, the LED can be used at a higher ambient temperature and a larger input as the heat resistance from the mounting substrate to the light emitting portion is smaller and the heat resistant temperature is higher. Therefore, thermal resistance and heat resistance are key points for increasing the output of the LED. However, when a resin is used for sealing an LED, the heat resistance of the resin is low (for example, an epoxy resin turns yellow at a temperature of 130 ° C. or higher), so that it is not suitable for use at high output. There was a problem.

  On the other hand, LED sealed with the glass produced by the sol gel method is proposed conventionally (for example, refer patent document 1). According to this LED, it is possible to reduce the hygroscopicity through the sealing material and the decrease in light transmittance due to discoloration of the sealing material, and it is also possible to improve the heat resistance.

Japanese Patent Laid-Open No. 2002-203989

  However, the sol-gel glass tends to have pores, and there is a problem that the operation of the LED is hindered when moisture enters the pores. In general, glass is inferior in adhesiveness to a substrate or a wiring metal compared to a resin, so that there is a problem that moisture enters from the interface between the sealing glass and the substrate or the wiring metal.

  The present invention has been made in view of these problems. That is, an object of the present invention is to provide a sealing glass, a light emitting device capable of preventing moisture from entering from the interface between the sealing glass, a substrate, and a wiring metal, and a method for manufacturing the same.

  Other objects and advantages of the present invention will become apparent from the following description.

  According to a first aspect of the present invention, any one of a substrate selected from the group consisting of a ceramic substrate, a glass ceramic substrate, and a silica-coated silicon substrate, a wiring formed on the substrate, an LED, and a semiconductor laser On the other hand, a light-emitting device including a light-emitting element having an electrode electrically connected to the wiring and a glass member that is manufactured by a melting method and covers the light-emitting element, the wiring being the first glass An adhesive material including a second glass component is provided between the glass member, the substrate, and the wiring.

  In the 1st aspect of this invention, when the 1st glass component and the 2nd glass component are the same, it is preferable that these softening points are higher than the softening point of the glass which comprises a glass member.

In the first aspect of the present invention, when the first glass component and the second glass component are different, the softening point of the first glass component is T ₁ , and the softening point of the second glass component is T ₂ , when the softening point of the glass constituting the glass member is T ₃ ,
T ₁ > T ₂ > T ₃
It is preferable that the relationship is established.

In any of the above cases, the first glass component is preferably contained in the wiring in the range of 0.5 wt% to 5 wt%. Further, the glass member is TeO ₂ —B ₂ O ₃ —ZnO-based glass, and preferably contains 10 mol% or more of TeO ₂ . Moreover, it is preferable that wiring and an electrode contain gold | metal | money and these are connected through the electroconductive member containing gold | metal | money. Further, the main emission peak wavelength of the light emitting element is preferably 500 nm or less. In this case, the light emitting element can be a GaN-based compound semiconductor.

  The second aspect of the present invention includes a step of preparing any one substrate selected from the group consisting of a ceramic substrate, a glass ceramic substrate, and a silica-coated silicon substrate, and a first glass component is included on the substrate. A step of forming a wiring pattern made of a wiring material, a step of forming an adhesive pattern containing a second glass component in a predetermined region on the substrate, and a step of heat-treating the wiring material after forming the wiring pattern And a step of electrically connecting one of the LED and the semiconductor laser to the wiring pattern after the heat treatment, a step of placing a glass material on the light emitting device, and heating at a temperature of 550 ° C. to 700 ° C. And a step of melting a glass material to form a glass member that seals the light-emitting element and is bonded to the substrate through an adhesive pattern. It is an butterfly.

  In the 2nd aspect of this invention, when the 1st glass component and the 2nd glass component are the same, it is preferable that these softening points are higher than the softening point of the glass which comprises a glass member.

In the second aspect of the present invention, when the first glass component and the second glass component are different, the softening point of the first glass component is T ₁ , and the softening point of the second glass component is T ₂ , when the softening point of the glass constituting the glass member is T ₃ ,
T ₁ > T ₂ > T ₃
It is preferable that the relationship is established.

  According to the first aspect of the present invention, since the light emitting element is covered with the glass member manufactured by the melting method, the problem of pores in the sol-gel glass can be solved. Moreover, since the adhesive is provided in order to improve the adhesive force between the glass member, the substrate and the wiring, it is possible to prevent moisture from entering from these interfaces.

  According to the second aspect of the present invention, it is possible to prevent light from entering from the glass member that seals the light emitting element and to prevent water from entering from the interface between the glass member, the substrate, and the wiring. A device can be obtained.

  FIG. 1 is a perspective view of the light emitting device according to the present embodiment. FIG. 2 is a cross-sectional view taken along the line AA ′ of FIG.

  As shown in FIGS. 1 and 2, the light emitting device 1 includes an LED 3 as a light emitting element provided on a substrate 2. Here, the LED 3 is electrically connected to the wiring 4 on the substrate 2 through bumps 5 as conductive members. In FIG. 2, reference numeral 6 denotes an electrode provided on the LED 3. In the example of FIGS. 1 and 2, the LED 3 and the wiring 4 are bonded by the flip chip method, but the present invention is not limited to this. For example, other wireless bonding using a non-conductive film (Non-Conductive Film) or the like may be applied, and wire bonding using a gold thin wire may be applied.

  In the present embodiment, the light emitting device 1 has a structure in which the LED 3 is sealed with a sealing glass 7 as a glass member. For example, by mounting the light emitting device 1 on a wiring board made of glass epoxy resin or the like, it is used for an illumination system or the like.

  As LED3 in this Embodiment, what does not deteriorate by the heat processing at the time of sealing with the sealing glass 7 is used. In general, since the heat resistance becomes higher as the band gap is larger, an LED whose emitted light is blue is preferably used. For example, an LED having a main emission peak wavelength of 500 nm or less, more specifically, an LED using a nitride semiconductor such as GaN and InGaN or an II-VI group compound semiconductor such as ZnO and ZnS can be used.

  The light emitting device of the present invention can also be applied to a case where a semiconductor laser is used instead of an LED. As the semiconductor laser, a laser diode that does not deteriorate due to heat treatment during sealing with sealing glass is used as in the case of LEDs. That is, a semiconductor laser having a main emission peak wavelength of 500 nm or less, more specifically, a semiconductor laser using a nitride semiconductor such as GaN and InGaN or a II-VI group compound semiconductor such as ZnO and ZnS is used. Can do.

  The substrate 2 is preferably a heat resistant substrate. This is because when the LED is sealed with glass, it is necessary to heat it to the melting temperature of the glass. Therefore, a resin substrate made of an epoxy resin or the like is not preferable because thermal degradation is expected. As a heat-resistant substrate applicable to the present embodiment, for example, a ceramic substrate such as an alumina substrate, an aluminum nitride substrate, and a silicon carbide substrate, a glass ceramic substrate, or a silicon substrate having a silicon oxide film formed on the surface (silica) Coated silicon substrate) can be used.

  As the sealing glass 7, glass that is not produced by the sol-gel method, that is, glass other than sol-gel glass is used. Specifically, a molten glass obtained by melting a glass raw material is used.

  The molten glass can be obtained, for example, by putting a glass raw material in a gold crucible, heating and melting it, and stirring and homogenizing with a gold stirrer. Then, the glass piece obtained by pouring the molten glass into a carbon mold and forming it into a plate shape is placed on the LED chip, and heated in this state at a temperature above the softening point of the glass to melt the glass piece again. Let Then, the LED can be sealed with a sealing glass in which at least a part of the surface shape is curved, and preferably the whole is substantially spherical due to the aggregation action of the glass itself.

  In this embodiment, the LED may be sealed by placing molten glass directly on the LED chip and cooling it.

  According to the present embodiment, the problem of pores as in sol-gel glass can be solved by using glass produced by a melting method as sealing glass.

The sealing glass 7 has a softening point of 500 ° C. or less, an average linear expansion coefficient at a temperature of 50 ° C. to 300 ° C. of 65 × 10 ⁻⁷ / ° C. to 95 × 10 ⁻⁷ / ° C., and a thickness for light having a wavelength of 405 nm. The internal transmittance at 1 mm is 80% or more, and the refractive index with respect to this light is preferably 1.8 or more. With such a glass, the refractive index is large and the difference in thermal expansion coefficient from the substrate 2 is small, so that the LED 3 can be covered without impairing the extraction efficiency of the light emitted from the LED 3. Specifically, TeO ₂ —B ₂ O ₃ —ZnO-based glass that contains 10 mol% or more of TeO ₂ is preferably used. The refractive index can be increased by increasing the TeO ₂ content.

  The sealing glass 7 can contain a phosphor. For example, a phosphor that emits yellow light can be added to the sealing glass. Thereby, the blue light emitted from the LED and the yellow light emitted when the phosphor is excited by a part of the blue light are mixed to obtain white light.

  Moreover, it is preferable that the sealing glass 7 is a thing which does not contain lead substantially from the point of an environmental problem. Furthermore, it is preferable that it is a thing which does not contain an alkali substantially from the point which prevents the electrical property of the light-emitting device 1 from falling.

  As a material for forming the electrode 6 and the wiring 4, for example, gold (Au), platinum (Pt), silver (Ag), aluminum (Al), or the like can be used. Of these, gold is preferably used because it has a high melting point and is not easily oxidized. This is because when the LED is sealed with glass, it is heat-treated at high temperature in the atmosphere, so that it is necessary to prevent the electrodes and wiring from being deformed or oxidized by heat. For the same reason, gold is preferably used as a material for forming the bump 5. When energized under high temperature and high humidity, there is no problem when the electrodes 6, the bumps 5 and the wiring 4 are all gold, but there is a possibility that corrosion occurs when different kinds of metals are used.

  In the present embodiment, in order to improve the adhesive force between the wiring 4 and the sealing glass 7 and the substrate 2, the material forming the wiring 4 includes a glass component (hereinafter referred to as a first glass component). Make it. Although the mechanism for improving the adhesive force is not necessarily clear, the adhesive force between the substrate 2 and the wiring 4 is improved by the anchor effect, while the adhesive force between the sealing glass 7 and the wiring 4 is formed by forming a chemical bond. It is thought to improve. Therefore, it is preferable that the first glass component is uniformly dispersed inside the wiring 4.

  The first glass component is preferably included in the wiring 4 in the range of 0.5 wt% to 5 wt%, and more preferably in the range of 0.5 wt% to 3 wt%. If it is less than 0.5% by weight, the adhesiveness between the wiring 4 and the sealing glass 7 is lowered. On the other hand, if it exceeds 5% by weight, the adhesion to the bumps 5 will decrease.

Examples of the first glass component include those containing SiO ₂ , Bi ₂ O ₃ , ZnO, and B ₂ O ₃ . Moreover, it is preferable that a 1st glass component is a thing which does not contain lead substantially from the point of an environmental problem. Furthermore, it is preferable that it is a thing which does not contain an alkali substantially from the point which prevents the electrical property of the light-emitting device 1 from falling.

  The material for forming the wiring 4 can also contain other components other than the first glass component. For example, when a wiring pattern is formed by screen printing, varnish can be added for the purpose of adjusting the viscosity and the purpose of uniformly dispersing the first glass component in gold. In this case, the varnish is preferably decomposed and evaporated by heating. Specifically, an organic varnish or the like can be used.

  Further, the present embodiment is characterized in that an adhesive material 8 containing a second glass component is provided in order to improve the adhesive force between the sealing glass 7 and the substrate 2 and the wiring 4. Thereby, it is possible to prevent moisture from entering from the interface between the sealing glass 7 and the substrate 2 and the wiring 4. Here, the second glass component may be the same as the first glass component, but preferably the second glass component is different as described later. Moreover, it is preferable that a 2nd glass component is a thing which does not contain lead substantially from the point of an environmental problem. Furthermore, it is preferable that it is a thing which does not contain an alkali substantially from the point which prevents the electrical property of the light-emitting device 1 from falling.

When the softening point of the first glass component is T ₁ (° C.), the softening point of the second glass component is T ₂ (° C.), and the softening point of the sealing glass is T ₃ (° C.), the first glass component When the second glass component and the second glass component are the same, the relationship of the formula (1) is preferably established, and when they are different, the relationship of the equation (2) is preferably established.

T ₁ = T ₂ > T ₃ (1)

T ₁ > T ₂ > T ₃ (2)

The time of sealing with glass is an LED, it is necessary to heat the sealing glass at T ₃ or higher. At this time, if T ₁ <T ₃ , the first glass component is melted prior to the sealing glass and is drawn toward the sealing glass, so that the adhesive force between the substrate and the wiring metal is reduced, Defects such as wiring floating from the substrate occur. In addition, when T ₂ <T ₃ , the adhesive pattern is deformed by melting the second glass component, leading to a decrease in the adhesive force between the sealing glass and the substrate or wiring. Therefore, when the 1st glass component and the 2nd glass component are the same, it is preferred that the relation of a formula (1) is materialized.

Moreover, the adhesive force of sealing glass, a board | substrate, and wiring is expressed when a 2nd glass component fuse | melts. Here, if T ₁ <T ₂ , the first glass component is melted before the second glass component, whereby the first glass component is drawn toward the adhesive, There is a possibility that the adhesive force between the substrate and the wiring metal is lowered. Therefore, it is preferable that the relationship of T ₁ > T ₂ is established between the first glass component and the second glass component, and therefore it is preferable that these are different components. The second glass component, for example, Asahi Glass Co., Ltd. of _{B 2 O 3 · ZnO · Bi} 2 O 3 based glass powder (trade name 1099) and the like can be used.

  The adhesive 8 can contain gold. Since gold has a high thermal conductivity, the heat dissipation effect from the adhesive 8 can be enhanced by including gold in the adhesive 8.

  In addition, the material forming the adhesive 8 can further contain other components. For example, when forming an adhesive material pattern by screen printing, a varnish can be added for the purpose of viscosity adjustment. In this case, the varnish is preferably decomposed and evaporated by heating. Specifically, an organic varnish or the like can be used.

  Next, the manufacturing method of the LED in this Embodiment is demonstrated using FIG.

  First, a wiring pattern composed of an anode and a cathode is formed on a substrate (step 1). For example, a desired wiring pattern can be formed by screen-printing a material obtained by adding a first glass component and an organic varnish to gold.

  Subsequently, an adhesive material pattern is formed in a predetermined region on the substrate (step 2). For example, an adhesive material pattern can be provided in a donut shape in a region surrounding the LED between the substrate and the wiring pattern and the sealing glass formed in a later process. Moreover, an adhesive material pattern can be formed by screen-printing what added the organic varnish to the 2nd glass component.

  Next, by performing heat treatment under predetermined conditions, the wiring material is baked to form the wiring (step 3).

  Next, the LED is mounted on the substrate (step 4). Specifically, an electrode provided on the LED and a wiring are electrically connected. The connection method may be either a wire bonding method or a wireless bonding method.

  Thereafter, the LED is sealed with sealing glass (step 5). For example, an appropriately shaped glass piece is prepared as a glass material, and this glass piece is placed on the LED chip. And by heating in this state and melting a glass piece, LED is sealed with sealing glass through an adhesive material pattern. At this time, the heat treatment temperature is preferably low from the viewpoint of not deteriorating the operation function of the LED. Specifically, it is in the range of 550 ° C. to 700 ° C., preferably in the range of 550 ° C. to 610 ° C. At a temperature of 550 ° C. or lower, it becomes difficult to melt the sealing glass and seal the LED. On the other hand, at a temperature of 700 ° C. or higher, the light emitting function of the LED may be impaired.

  At a certain temperature, glass tends to become a shape (spherical shape) determined by its surface energy and substrate wettability. However, in reality, the final shape, ie, equilibrium, is obtained by adding deformation due to its own weight. The shape obtained in the state is determined. Moreover, since the viscosity of glass changes with temperature, in the situation where temperature changes with time, the viscosity of glass changes with time. Therefore, when the holding time at a certain temperature is shorter than the time required for the deformation of the glass, the shape of the glass is determined before reaching the shape obtained in the equilibrium state. For this reason, in the present invention, in order to make the shape of the glass member into a shape in which at least a part of the surface shape is a curved surface, preferably a substantially spherical shape as a whole, the molten glass material is held in an appropriate viscosity state. It is desirable. Specifically, the glass material is preferably held at a glass transition point (100 ° C. to 220 ° C., preferably 120 ° C. to 200 ° C.).

  Through the above steps, the light-emitting device shown in FIGS. 1 and 2 can be obtained. According to the light emitting device of the present invention, since the LED is sealed with glass produced by a melting method, the problem of pores in the sol-gel glass can be solved and moisture can be prevented from entering from the sealing material. it can. In addition, since an adhesive is provided to improve the adhesive force between the sealing glass, the substrate, and the wiring, it is possible to prevent moisture from entering from these interfaces.

  Further, the light emitting device according to the present invention has higher heat resistance than the resin-sealed light emitting device. Further, the glass constituting the glass member used in the present invention has a refractive index of 1.8 or more, and generally has a high refractive index with respect to a resin having a refractive index of 1.5 or less. For this reason, according to the light emitting device of the present invention, compared with a resin-sealed light emitting device, the efficiency of extracting emitted light can be increased, and it is expected that high luminance can be obtained without providing a heat sink. Therefore, it is possible to operate with higher light extraction efficiency by connecting bare chips with high density.

  The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention.

  For example, in the above-described embodiment, an LED is placed on a heat-resistant substrate, a glass piece is placed on the LED, and heated and cooled to coat the LED with spherical glass. However, the present invention is not limited to this. For example, an LED is placed on a heat-resistant substrate provided with a release material layer, and a glass piece is placed on the LED to be heated and cooled. The LED can be coated with spherical glass. In order to obtain a glass member having a shape in which at least a part of the surface shape is a curved surface, preferably a substantially spherical shape as a whole, it is preferable to provide a release material layer.

  Moreover, in this invention, after forming the preform of a glass member, this may be mounted on LED and LED may be sealed with glass by fuse | melting again. In order to cover the LED with a sealing glass having a shape in which at least a part of the surface shape is a curved surface, preferably a substantially spherical shape as a whole in a short time, it is preferable to carry out after forming a preform. In this case, the preform may be formed on either a heat-resistant substrate provided with a release material layer or a heat-resistant substrate provided with no release material layer. In order to obtain a glass member having a shape in which at least a part of the shape is a curved surface, preferably a substantially spherical shape as a whole, it is preferable to provide a release material layer.

  Examples of the present invention will be described below.

Example 1.
<Formation of wiring and adhesive>
As the substrate, an alumina substrate having a purity of 99.6% and a thickness of 1 mm was used. Next, a gold paste for wiring formation was prepared. Specifically, gold (80% by weight), first glass component (2% by weight) and organic varnish (18% by weight) are mixed, kneaded in a magnetic mortar for 1 hour, and then used with three rolls. Dispersion was performed three times to obtain a gold paste.

As the gold, spherical fine powder having an average particle diameter of 2 μm was used. As the first glass _{component, SiO 2 (44.65mol%),} B 2 O 3 (13.13mol%), ZnO (18.44mol%), Li 2 O (6.58mol%), Na 2 _{O (7.06mol%), K 2} O (0.71mol%), TiO 2 (3.15mol%), Bi 2 O 3 (5.28mol%) and consists _CeO 2 _(1.0mol%), average A flaky glass powder having a particle size of 1 μm was used. The softening point of the first glass component was 550 ° C. As the organic varnish, an ethyl cellulose resin having a polymerization degree of 7 dissolved in α-terpineol so as to have a concentration of 20% by weight was used.

  Next, a gold paste was screen printed on the surface of the alumina substrate to form a wiring pattern.

  Subsequently, an adhesive pattern was formed. Specifically, the same material as the first glass component was used as the second glass component, and an organic varnish was mixed with the second glass component to prepare an adhesive paste. Next, this adhesive paste was screen printed at a predetermined position on the surface of the alumina substrate to form an adhesive pattern.

  Next, after performing heat treatment at 120 ° C. for 10 minutes, gold wiring and an adhesive were provided on the alumina substrate by baking at 800 ° C. for 30 minutes.

<LED>
E1C60-0B011-03 (trade name) manufactured by Toyoda Gosei Co., Ltd. was used.

<Bonding>
First, LEDs were die-bonded at predetermined positions on the alumina substrate. Specifically, die bonding was performed with a silver paste (T-303ON (trade name) manufactured by Sumitomo Metal Mining Co., Ltd.) using a manual die bonder (product name 7200CR) manufactured by West Bond. At this time, the heating condition was 150 ° C. for 30 minutes.

  Next, the electrode provided in LED and the gold wiring were wire-bonded. Specifically, using a manual wire bonder (product name: 7700D) manufactured by West Bond, wire bonding was performed using a gold wire having a diameter of 25 μm (SGH-25 (product name) manufactured by Sumitomo Metal Mining Co., Ltd.). At this time, the thermocompression bonding temperature was 240 ° C.

<Glass sealing>
The LED mounted on the alumina substrate was sealed with glass. The sealing _{glass, TeO 2 (45.0mol%),} TiO 2 (1.0mol%), GeO 2 (5.0mol%), B 2 O 3 (18.0mol%), Ga 2 O 3 (6 _{.0mol%), Bi 2 O 3} (3.0mol%), ZnO (15mol%), Y 2 O 3 (0.5mol%), La 2 O 3 (0.5mol%), Gd 2 O 3 (3 0.0 mol%) and Ta ₂ O ₅ (3.0 mol%). In addition, the softening point of this sealing glass was 490 degreeC.

  First, 7.61 g of cullet of the sealing glass was put in a mortar and pulverized with a pestle, and then mixed with 381 mg of a yellow phosphor (P46-Y3 (trade name) manufactured by Kasei Optonics Co., Ltd.). 16 mg of the obtained glass frit containing a phosphor was placed on an LED and heat-treated in an electric furnace (product name FP41) manufactured by Daiwa Science Co., Ltd. Specifically, the temperature was raised from 25 ° C. at a rate of 5 ° C./min, and then held at 610 ° C. for 15 minutes. Thereafter, the temperature was lowered to 25 ° C. at a rate of 5 ° C./min. Thereby, LED was able to be sealed with spherical glass. The obtained light-emitting device had good adhesion between the sealing glass, the alumina substrate, and the gold wiring. Moreover, when the voltage was applied to LED, white emitted light was able to be confirmed.

Example 2
<Wiring formation>
In the same manner as in Example 1, a gold wiring and an adhesive material pattern were formed on an alumina substrate.

<LED>
E1C31-0B001-03 (trade name) manufactured by Toyoda Gosei Co., Ltd. was used.

<Bonding>
First, bumps were formed on the LED electrodes. Specifically, using a manual wire bonder (product name: 7700D) manufactured by West Bond, gold bumps were formed with a gold wire having a diameter of 25 μm (SGH-25 (product name) manufactured by Sumitomo Metal Mining Co., Ltd.). The formed gold bumps had a diameter of 100 μm and a height of 25 μm.

  Next, the electrode provided in LED and the gold wiring were bonded through the gold bump. Specifically, the LED was flip-chip mounted on an alumina substrate using a flip chip bonder (product name MOA-500) manufactured by Hisol. The diameter of the gold bump after mounting was about 100 μm, and the height was about 15 μm to 20 μm.

<Glass sealing>
The LED mounted on the alumina substrate was sealed with glass. Specifically, the same sealing glass as in Example 1 was processed into a block shape, placed on a flip-chip mounted LED, and heat-treated with an electric furnace (product name FP41) manufactured by Yamato Science Co., Ltd. . The temperature profile is shown in FIG. Thereby, sealing glass was softened and LED was able to be sealed with spherical glass. The obtained light-emitting device had good adhesion between the sealing glass, the alumina substrate, and the gold wiring. Moreover, when the voltage was applied to LED, the blue emitted light was confirmed.

It is a perspective view of the light emitting device of the present invention. It is sectional drawing of the light-emitting device of this invention. It is a flowchart explaining the manufacturing method of the light-emitting device of this invention. It is a temperature profile of the glass sealing process in Example 2.

Explanation of symbols

1 Light Emitting Device 2 Substrate 3 LED
4 Wiring 5 Bump 6 Electrode 7 Sealing glass 8 Adhesive

Claims (11)

Any one substrate selected from the group consisting of a ceramic substrate, a glass ceramic substrate, and a silica-coated silicon substrate;
Wiring formed on the substrate;
A light-emitting element that is one of an LED and a semiconductor laser and includes an electrode electrically connected to the wiring;
A light emitting device manufactured by a melting method and having a glass member covering the light emitting element,
The wiring includes a first glass component;
A light-emitting device, wherein an adhesive material including a second glass component is provided between the glass member, the substrate, and the wiring. The first glass component and the second glass component are the same,
The light emitting device according to claim 1, wherein the softening point is higher than the softening point of the glass constituting the glass member. The first glass component and the second glass component are different,
T ₁ The softening point of the first glass _component, T ₂ the softening point of the second glass _component, the softening point of the glass constituting the glass member and T _3,
T ₁ > T ₂ > T ₃
The light emitting device according to claim 1, wherein the relationship is established.   4. The light emitting device according to claim 1, wherein the first glass component is included in the wiring in a range of 0.5 wt% to 5 wt%. 5. The light emitting device according to claim 1, wherein the glass member is TeO ₂ —B ₂ O ₃ —ZnO-based glass, and contains 10 mol% or more of TeO ₂ . The wiring and the electrode include gold,
These are connected through the electroconductive member containing gold | metal | money, The light-emitting device of any one of Claims 1-5 characterized by the above-mentioned.   The light emitting device according to claim 1, wherein a main light emission peak wavelength of the light emitting element is 500 nm or less.   The light-emitting device according to claim 7, wherein the light-emitting element is a GaN-based compound semiconductor. Preparing any one substrate selected from the group consisting of a ceramic substrate, a glass ceramic substrate and a silica-coated silicon substrate;
Forming a wiring pattern made of a wiring material containing a first glass component on the substrate;
Forming an adhesive pattern containing a second glass component in a predetermined region on the substrate;
A step of heat-treating the wiring material after forming the wiring pattern;
Electrically connecting one of the LED and the semiconductor laser to the wiring pattern after the heat treatment;
Placing a glass material on the light emitting element;
And a step of melting the glass material by heating at a temperature of 550 ° C. to 700 ° C., sealing the light emitting element, and forming a glass member bonded to the substrate through the adhesive pattern. A method of manufacturing a light emitting device. The first glass component and the second glass component are the same,
The method for manufacturing a light-emitting device according to claim 9, wherein the softening point is higher than the softening point of the glass constituting the glass member. The first glass component and the second glass component are different,
T ₁ The softening point of the first glass _component, T ₂ the softening point of the second glass _component, the softening point of the glass constituting the glass member and T _3,
T ₁ > T ₂ > T ₃
The manufacturing method of the light emitting device according to claim 9, wherein the relationship is established.

Images