JP2007067073A - Manufacturing method of tape carrier for tab - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a tape carrier for TAB which can form a feed hole, while making it possible to form a conductive pattern which causes neither a short circuit nor disconnection easily, or to form a cover insulating layer which does not generate easily a pinhole. <P>SOLUTION: A cover insulating layer 12 is formed such that a base insulating layer 2 is formed on a reinforcement layer 4, a conductive pattern 7 is formed on the base insulating layer 2, and the conductive pattern 7 is covered. After that, a feed hole 15 is perforated. Even if punched waste is produced when perforating the feed hole 15, it does not become a foreign substance in an exposure process at the time of forming the conductive pattern 7 and the cover insulating layer 12. Therefore, the feed hole 15 can be formed, at the same time by making it possible to form the conductive pattern 7 which causes neither a short circuit nor disconnection, and the cover insulating layer 12 which does not generate a pinhole by poor exposure resulting from the foreign substance. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a TAB tape carrier, and more particularly to a method for manufacturing a TAB tape carrier including a step of punching a transport hole.

The TAB tape carrier is a tape carrier on which a semiconductor element is mounted by a TAB (Tape Automated Bonding) method, and is widely used in the field of electronic components.
The tape carrier for TAB includes a base insulating layer, a conductor pattern formed as a wiring circuit pattern on the base insulating layer, a cover insulating layer formed on the base insulating layer so as to cover the conductor pattern, It has.

In such a TAB tape carrier, sprocket holes and perforations such as sprocket holes provided at intervals in the longitudinal direction are formed on both side edges of the base insulating layer by punching such as pressing or punching. Is formed.
In the manufacturing process of such a TAB tape carrier, usually, first, a transport hole is formed in the insulating base layer, and then a conductor pattern is formed on the insulating base layer.

For example, first, a sprocket hole is formed in a reinforcing insulating film by pressing, and then a conductive layer is bonded to the reinforcing insulating film, and the wiring layer is formed by etching the conductive layer. Has been proposed (see, for example, Patent Document 1).
In addition, for example, it has been proposed to first form perforation on a copper foil and a base film by punching, and then etch the copper foil to form a wiring pattern (see, for example, Patent Document 2). ).
Japanese Patent Laid-Open No. 9-172041 JP 2000-332062 A

  However, when the above-described transport hole is formed in the base insulating layer, punching waste is generated in the perforating process. In the method of forming a conductor pattern after forming a transport hole as described in Patent Documents 1 and 2, punching dust generated when forming the transport hole is used as a photoresist when the conductor pattern is subsequently formed. It becomes a foreign substance in the exposure process. Then, since the exposure failure of the photoresist is caused, there is a possibility that a short circuit or a disconnection may occur in the conductor pattern formed by the exposure failure.

In addition, when the insulating cover layer is formed after forming the transport hole in the insulating base layer, it becomes a foreign substance in the exposure process of the photosensitive resin when forming the insulating cover layer. Then, since the exposure failure of the photoresist is caused, a pinhole may be generated in the insulating cover layer formed by the exposure failure.
The objective of this invention provides the manufacturing method of the tape carrier for TAB which can form a conveyance hole, being able to form the cover insulating layer which is hard to produce the conductor pattern and pinhole which are hard to produce a short circuit or a disconnection. There is.

In order to achieve the above object, a method for manufacturing a TAB tape carrier of the present invention includes a step of continuously forming a plurality of conductor patterns on a base insulating layer at intervals, and a step of forming the conductor patterns. And a step of drilling a transport hole for transporting the base insulating layer later.
The method for producing a TAB tape carrier of the present invention includes a step of forming an insulating cover layer on the insulating base layer so as to cover the conductive pattern, and the transport hole is formed on the insulating cover layer. It is preferred to perforate after the forming step.

  According to the method for manufacturing a TAB tape carrier of the present invention, a punching hole is generated when forming the transport hole to punch the transport hole for transporting the base insulating layer after the conductor pattern forming step. It does not become a foreign substance in the exposure process of the photoresist when forming the conductor pattern, and therefore, it is possible to form the transport hole while being able to form a conductor pattern that is unlikely to cause a short circuit or disconnection.

  Further, in the method for manufacturing a TAB tape carrier of the present invention, if the transport hole is drilled after the cover insulating layer forming step, punching dust is generated when the transport hole is formed after the cover insulating layer is formed. However, it does not become a foreign substance in the exposure process when forming the insulating cover layer, and therefore, it is possible to form the transport hole while forming the insulating cover layer that is unlikely to generate pinholes.

FIG. 1 is a partial plan view showing an embodiment of a TAB tape carrier manufactured by the method for manufacturing a TAB tape carrier of the present invention, and FIG. 2 is an enlarged plan view of a wiring portion of the TAB tape carrier shown in FIG. 3 is a partial bottom view of the TAB tape carrier shown in FIG. 1, and FIG. 5J is a cross-sectional view of the TAB tape carrier shown in FIG.
In FIG. 1, a TAB tape carrier 1 includes a base insulating layer 2 as a tape-like base material extending continuously in the longitudinal direction, and a plurality of conductor patterns 7 formed on the surface of the base insulating layer 2. Wiring portion 3, reinforcing layer 4 (see FIG. 3) formed on the back surface of insulating base layer 2, and transport portion 5 for transporting TAB tape carrier 1.

On the surface of the insulating base layer 2, the wiring portions 3 are spaced apart from each other in the longitudinal direction of the insulating base layer 2 (same as the longitudinal direction of the TAB tape carrier 1, hereinafter, sometimes simply referred to as the longitudinal direction). A plurality of them are continuously provided.
As shown in FIG. 2, each wiring portion 3 is provided with a mounting portion 6 having a substantially rectangular shape in plan view for mounting (mounting) a semiconductor element at the center thereof. Conductive patterns 7 are formed on both sides of the mounting portion 6 in the longitudinal direction.

The conductor pattern 7 is composed of a plurality of wirings 8 spaced from each other on the surface of the base insulating layer 2, and each wiring 8 integrally includes an inner lead 9, an outer lead 10 and a relay lead 11. Yes.
Each inner lead 9 faces the mounting portion 6, extends along the longitudinal direction, and is spaced apart from each other in the width direction of the TAB tape carrier 1 (a direction orthogonal to the longitudinal direction, hereinafter simply referred to as a width direction). .) Are arranged in parallel. The pitch of each inner lead 9 (that is, the total length of the width (bottom width) of one inner lead 9 and the width (interval) between two inner leads 9) IP is 40 μm or less, preferably 30 μm In the following, it is usually set to 20 μm or more.

The width (bottom width) of each inner lead 9 is 5 to 15 μm, preferably 10 to 15 μm, and the width (interval) between the two inner leads 9 is set to 5 to 35 μm, preferably 10 to 20 μm. Has been.
Each outer lead 10 faces both ends in the longitudinal direction of the wiring portion 3, extends along the longitudinal direction, and is arranged in parallel in the width direction at intervals. The pitch of each outer lead 10 (that is, the total length of the width (bottom width) of one outer lead 10 and the width (interval) between two outer leads 10) OP is relative to the pitch IP of each inner lead 9. For example, it is set to about 100 to 1000%. That is, the pitch OP of each outer lead 10 may be set wider than the pitch IP of each inner lead 9, or can be set substantially the same width as the pitch IP of each inner lead 9. .

  Each relay lead 11 relays each inner lead 9 and each outer lead 10 so that each inner lead 9 and each outer lead 10 are continuous, and the pitch OP of each outer lead 10 is the pitch IP of each inner lead 9. If the width is set wider than the inner lead 9 having a small pitch, the outer leads 10 are arranged in a radial pattern that gradually spreads in the width direction from the outer lead 10 having a large pitch.

In addition, a cover insulating layer 12 such as a solder resist is provided at a portion where each relay lead 11 is disposed. That is, the insulating cover layer 12 is formed in a substantially rectangular frame shape in plan view so as to surround the mounting portion 6, and is provided so as to cover all the relay leads 11.
When the conductor pattern 7 is formed by the additive method, a metal thin film 16 is interposed between the base insulating layer 2 and the conductor pattern 7 as shown in FIG.

A metal plating layer (not shown) is formed on the inner lead 9 and the outer lead 10 exposed from the insulating cover layer 12.
The reinforcing layer 4 is laminated on the back surface of the base insulating layer 2 as shown in FIG. As shown in FIGS. 1 and 3, an opening 14 is formed in the reinforcing layer 4 at a position facing each wiring portion 3. Each opening portion 14 is formed by opening the reinforcing layer 4 in a substantially rectangular shape in a bottom view corresponding to each wiring portion 3. The reinforcing layer 4 reinforces the base insulating layer 2 from below.

As shown in FIGS. 1 and 3, the transport unit 5 is provided along the longitudinal direction at both side edges in the width direction of the TAB tape carrier 1. A feed hole 15 as a transport hole is opened in the transport unit 5.
The feed hole 15 is formed so that a sprocket or the like can be engaged with the TAB tape carrier 1 to convey it. The feed hole 15 is formed of a base hole 21 and a reinforcing hole 22 as shown in FIG.

As shown in FIG. 1 and FIG. 5 (j), a plurality of base holes 21 are formed at equal intervals along the longitudinal direction at both side edges in the width direction of the base insulating layer 2. Each base hole 21 is formed to face each other in the width direction. Each feed hole 15 is formed by opening the base insulating layer 2 in a substantially rectangular shape in plan view.
A plurality of the reinforcing holes 22 are formed at equal intervals along the longitudinal direction at both side edges in the width direction of the reinforcing layer 4. Each reinforcing hole 22 is disposed to face each base hole 21, and the reinforcing layer 4 is formed by opening in the same shape as each base hole 21.

4 and 5 are production process diagrams showing an embodiment of a method for producing a TAB tape carrier of the present invention.
Next, a method for manufacturing the TAB tape carrier 1 will be described with reference to FIGS.
In this method, first, a reinforcing layer 4 is prepared as shown in FIG. As the reinforcement layer 4, metal foil, such as copper foil and stainless steel foil, is used, for example, Preferably, stainless steel foil is used. As the stainless steel foil, for example, SUS301, SUS304, SUS305, SUS309, SUS310, SUS316, SUS317, SUS321, SUS347 or the like is used based on the standard of AISI (American Iron and Steel Institute). Moreover, the thickness of the reinforcement layer 4 is 3-100 micrometers, for example, Furthermore, 5-30 micrometers, More preferably, it is 8-20 micrometers.

  1 to 3, one row of TAB tape carriers 1 is shown. Usually, after a plurality of rows of TAB tape carriers 1 are simultaneously formed in the width direction of the reinforcing layer 4, one row is formed. Slit every time. For example, in the reinforcing layer 4 having a width of 250 mm, four rows of TAB tape carriers 1 having a width of 48 mm are produced simultaneously, and in the reinforcing layer 4 having a width of 300 mm, four rows of TAB tape carriers 1 having a width of 70 mm are produced simultaneously.

Next, as shown in FIG. 4B, the base insulating layer 2 is formed on the reinforcing layer 4.
The base insulating layer 2 can be formed by applying a resin solution containing a polyimide resin precursor on the reinforcing layer 4 and heating and curing it after drying.
As the polyimide resin precursor, for example, a polyamic acid resin obtained by a reaction between an aromatic tetracarboxylic acid and an aromatic diamine is used. For example, the resin solution is prepared as a varnish by dissolving a polyamic acid resin in an organic solvent.

The resin solution is applied by a known method such as a doctor blade method or a spin coating method. Then, after drying, the base insulating layer 2 made of polyimide resin is formed on the reinforcing layer 4 by heating and curing at 200 to 600 ° C., for example.
In addition, if a well-known photosensitive agent is mix | blended with a resin solution, after apply | coating a resin solution on the reinforcement layer 4, it can also form the base insulating layer 2 as a pattern by exposing and developing.

The base insulating layer 2 can also be formed by sticking a preprocessed polyimide resin dry film on the reinforcing layer 4 with an adhesive if necessary.
The insulating base layer 2 thus formed has a thickness of, for example, 50 μm or less, preferably 30 μm or less, more preferably 15 μm or less, usually 3 μm or more.
Next, in this method, as shown in FIG. 4C, a metal thin film 16 serving as a seed film (underlying) is formed on the entire surface of the base insulating layer 2.

  The metal thin film 16 is formed by a vacuum vapor deposition method, preferably a sputter vapor deposition method. The metal forming the metal thin film 16 is preferably chromium or copper. More specifically, for example, a chromium thin film and a copper thin film are sequentially formed on the entire surface of the base insulating layer 2 by sputtering deposition. In forming the metal thin film 16, for example, the thickness of the chromium thin film is set to 100 to 600 mm and the thickness of the copper thin film is set to 500 to 2000 mm.

Next, in this method, a plating resist 17 is formed on the front surface of the metal thin film 16 and the back surface of the reinforcing layer 4 as shown in FIG. The plating resist 17 is formed as a resist pattern that is reversed to the wiring 8 on the metal thin film 16 by a known method of exposure and development using, for example, a dry film resist.
Next, in this method, as shown in FIG. 4E, a conductor pattern 7 made of wiring 8 is formed on the surface of the metal thin film 16 exposed from the plating resist 17 by plating. The conductor pattern 7 is formed from, for example, copper, nickel, gold, solder, or an alloy thereof. Preferably, it is formed from copper. Moreover, in order to form the conductor pattern 7, electrolytic plating or electroless plating, preferably electrolytic plating, more preferably electrolytic copper plating is used. As a result, the conductor pattern 7 is formed on the insulating base layer 2 as a pattern of the wiring 8 in which the inner lead 9, the outer lead 10, and the relay lead 11 are integrally formed. The thickness of the conductor pattern 7 formed in this way is, for example, 5 μm or more, preferably 8 to 15 μm.

Next, in this method, as shown in FIG. 5F, the plating resist 17 is removed by a known etching method such as chemical etching (wet etching) or peeling.
Next, in this method, as shown in FIG. 5G, the metal thin film 16 exposed from the wiring 8 (that is, the metal thin film 16 where the plating resist 17 is formed) is also chemically etched (wet etching). And the like by a known etching method.

  Next, in this method, as shown in FIG. 5 (h), the cover insulating layer 12 covering the relay lead 11 of each wiring 8 is formed in a substantially rectangular frame shape in plan view so as to surround the mounting portion 6. The insulating cover layer 12 is formed from a photosensitive solder resist or the like by a known method of exposing and developing. The insulating cover layer 12 has a thickness of, for example, 5 to 30 μm, or preferably 5 to 20 μm.

Next, in this method, although not shown, metal plating layers are formed on the surfaces of the inner lead 9 and the outer lead 10 of each wiring 8. As the metal plating layer, for example, nickel, gold or the like is used. The metal plating layer is formed, for example, by electroless metal plating so as to cover the surfaces of the inner lead 9 and the outer lead 10 of each wiring 8.
Next, in this method, an opening 14 is formed in the reinforcing layer 4 as shown in FIG.

  In order to form the opening 14 in the reinforcing layer 4, the portion of the reinforcing layer 4 that faces the wiring portion 3 is opened by a known method such as drilling, punching, or chemical etching (wet etching). For example, in the case of etching, the portion other than the portion where the opening 14 is formed is covered with an etching resist, and after etching using an etching solution such as a ferric chloride solution, the etching resist is removed.

Next, in this method, as shown in FIG. 5 (j), a feed hole 15 is drilled in the transport unit 5 to obtain the TAB tape carrier 1.
In order to drill the feed hole 15, the base hole of the base insulating layer 2 is formed so that both the base insulating layer 2 and the reinforcing layer 4 penetrate along the longitudinal direction at both side edges in the width direction of the base insulating layer 2. 21 and the reinforcing hole 22 of the reinforcing layer 4 are perforated and opened. For punching the feed hole 15, for example, a known processing method such as drilling, laser processing, punching, or the like can be used, and punching using a mold is preferably used.

In the manufacturing method of the TAB tape carrier 1 described above, the conductor pattern 7 is formed by an additive method in which the metal thin film 16 and the plating resist 17 are formed and electroplated. However, the conductor pattern 7 is formed of the conductor layer 18 and the etching resist. 19 may be formed by a subtractive diving method in which 19 is formed and etched.
FIG. 6 is a production process diagram showing another embodiment of the method for producing a TAB tape carrier of the present invention.

Next, a method for manufacturing a TAB tape carrier when the TAB tape carrier 1 is manufactured by the subtractive method will be described with reference to FIG.
In this method, first, as shown in FIG. 6A, a reinforcing layer 4, a base insulating layer 2 formed on the reinforcing layer 4, a conductor layer 18 formed on the base insulating layer 2, A three-layer base material is prepared.

For the reinforcing layer 4 forming the three-layer base material, a metal foil similar to the above is used, and a stainless steel foil is preferably used. The thickness is the same as described above, preferably 5 to 30 μm, and more preferably 8 to 20 μm.
For the insulating base layer 2 forming the three-layer base material, the same synthetic resin as described above is used, and preferably, a polyimide resin is used. The thickness is the same as described above, preferably 10 to 40 μm, and more preferably 20 to 30 μm.

The conductor layer 18 forming the three-layer base material is made of the same metal as described above, and preferably made of copper. The thickness is the same as described above, and preferably 8 to 15 μm.
Next, in this method, an etching resist 19 is formed on the conductor layer 18 as shown in FIG.
The etching resist 19 is formed as the same resist pattern as the wiring 8 by a known method of exposing and developing using, for example, a dry film resist.

Next, in this method, as shown in FIG. 6C, the conductor layer 18 exposed from the etching resist 19 is etched to form the conductor pattern 7 composed of the wiring 8 with the above-described pattern. For the etching of the conductor layer 18, for example, chemical etching (wet etching) is used.
Next, in this method, as shown in FIG. 6D, the etching resist 19 is removed by a known etching method such as chemical etching (wet etching) or peeling.

  Next, in this method, as shown in FIG. 6E, the insulating cover layer 12 that covers the relay lead 11 of each wiring 8 is formed in a substantially rectangular frame shape in plan view so as to surround the mounting portion 6. The insulating cover layer 12 is formed from the same photosensitive solder resist as described above by the same method as described above. The thickness of the cover insulating layer 12 is the same as described above, and is preferably 5 to 20 μm.

Next, in this method, although not shown, metal plating layers are formed on the surfaces of the inner lead 9 and the outer lead 10 of each wiring 8. As the metal plating layer, the same metal as described above is used. The metal plating layer is formed, for example, by electroless metal plating so as to cover the surfaces of the inner lead 9 and the outer lead 10 of each wiring 8 as described above.
Next, in this method, as shown in FIG. 6 (f), the opening 14 is formed at a position overlapping the wiring portion 3 in the reinforcing layer 4.

In order to form the opening 14 in the reinforcing layer 4, the portion of the reinforcing layer 4 facing the wiring portion 3 is opened by the same method as described above.
Next, in this method, as shown in FIG. 6G, a feed hole 15 is drilled in the transport section 5 to obtain a method for manufacturing a TAB tape carrier.
In order to drill the feed hole 15, the plurality of feed holes 15 described above are formed along the longitudinal direction at both side edges in the width direction of the insulating base layer 2 in the same manner as described above, the insulating base layer 2, the reinforcing layer 4, and the like. Perforate so that they penetrate. For punching the feed hole 15, the same method as described above is used, and preferably punching using a mold is used.

  In the manufacturing method of the TAB tape carrier 1 described above, the feed hole 15 is punched after the step of forming the conductor pattern 7. Therefore, even if punch scraps are generated when the feed hole 15 is formed by punching, the punch scraps are not removed. In the exposure process of the photoresist when forming the conductor pattern 7, that is, in the exposure process of the plating resist 17 in the above-described additive method, and in the exposure process of the etching resist 19 in the above-described subtractive method, it becomes a foreign substance. There is no. As a result, it is possible to form the feed hole 15 while being able to form the conductor pattern 7 that does not cause a short circuit or disconnection due to an exposure failure caused by the foreign matter.

  Moreover, in the manufacturing method of the TAB tape carrier 1 described above, the feed hole 15 is drilled after the cover insulating layer 12 is formed. Therefore, even if punching waste is generated when the feed hole 15 is formed by drilling, the cover is covered. In the exposure process when forming the insulating layer 12, that is, the exposure process of the photosensitive solder resist, no foreign matter is formed. As a result, the feed hole 15 can be formed while the cover insulating layer 12 can be formed without causing pinholes due to poor exposure due to foreign matter.

  In the above description, the reinforcing layer 4 is provided on the TAB tape carrier 1, but the reinforcing layer 4 may not be provided depending on the purpose and application.

It is a partial top view which shows one Embodiment of the TAB tape carrier manufactured by the manufacturing method of the TAB tape carrier of this invention. It is an enlarged plan view of the wiring part of the TAB tape carrier shown in FIG. FIG. 2 is a partial bottom view of the TAB tape carrier shown in FIG. 1. It is a manufacturing process figure which shows one Embodiment of the manufacturing method of the tape carrier for TAB of this invention, (a) is a process which prepares a reinforcement layer, (b) forms a base insulating layer on a reinforcement layer. (C) is a step of forming a metal thin film on the entire surface of the base insulating layer, (d) is a step of forming a plating resist on the surface of the metal thin film and the back surface of the reinforcing layer, (e) These show the process of forming a conductor pattern on the metal thin film exposed from a plating resist. FIG. 5 is a process diagram showing an embodiment of a method for manufacturing a TAB tape carrier following FIG. 4, wherein (f) is a process for removing a plating resist, and (g) is a process for removing a metal thin film exposed from a wiring. (H) shows a step of forming a cover insulating layer, (i) shows a step of forming an opening in the reinforcing layer, and (j) shows a step of punching a feed hole in the transport unit. It is a manufacturing process figure which shows other embodiment of the manufacturing method of the tape carrier for TAB of this invention, (a) is the process of preparing the three-layer base material which consists of a reinforcement layer, a base insulating layer, and a conductor layer, (B) is a step of forming an etching resist on the conductor layer, (c) is a step of etching the conductor layer exposed from the etching resist to form a conductor pattern, and (d) is a step of forming an etching resist. (E) is a step of forming a cover insulating layer, (f) is a step of forming an opening in the reinforcing layer, and (g) is a step of punching a feed hole in the transport portion. .

Explanation of symbols

1 TAB tape carrier 2 Base insulating layer 7 Conductor pattern 12 Cover insulating layer 15 Feed hole

Claims (2)

A step of continuously forming a plurality of conductor patterns on the base insulating layer at intervals from each other;
A method for manufacturing a TAB tape carrier, comprising a step of drilling a transport hole for transporting the base insulating layer after the step of forming the conductive pattern. Forming a cover insulating layer on the insulating base layer so as to cover the conductor pattern;
The method for manufacturing a TAB tape carrier according to claim 1, wherein the transport hole is perforated after the step of forming the insulating cover layer.

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