JP2007059524A - Substrate cutting method and substrate cutting apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To work on an addition part to form uniform thickness even if the thickness of a substrate except for the addition is not uniform for cutting the addition part made of such as metal or resin formed on the surface of the substrate such as a semiconductor wafer. <P>SOLUTION: A suction face 15a of a chuck table parallel to a cut plane formed of a rotation track of a byte 26 is set to be a reference face. Parallelism of the surface of the semiconductor wafer 1 with respect to the reference face is measured by a height measurement unit 50. The facing angle of the chuck table 15 with respect to the byte 26 is adjusted so that the surface of the addition 5 becomes parallel to the reference face based on a measurement value. A uniform amount is cut from the surface of the addition 5. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a technique for cutting the surface of a semiconductor wafer used as a substrate of an electronic device and other thin plate-like substrates having, for example, a resin layer or a metal layer, and in particular, from a material such as metal or resin on the surface. The present invention relates to a technique for cutting a thickness of the additional portion uniformly on a substrate on which the additional portion is formed.

  A semiconductor chip having an electronic circuit such as an IC or LSI formed on its surface has a rectangular rectangular area defined by a cut line called street on the surface of a disk-shaped semiconductor wafer, and the electronic circuit is formed in these rectangular areas. Thereafter, the semiconductor wafer is manufactured through a process of dividing along a street.

  Some semiconductor wafers have a plurality of metal protrusions formed on the surface or a resin film formed as an insulating means, and some semiconductor wafers have both the metal and the resin film on the surface. For example, as a metal, there is a metal called a bump having a height of about 15 to 100 μm that serves as a wiring that is electrically connected to a semiconductor element and a connection terminal for mounting on a mounting substrate. In a semiconductor wafer having a plurality of protruding bumps formed on the surface, it is necessary for the height to be uniform in order to make all the bumps abut against the terminals of the substrate to be connected. For that purpose, as described in Patent Documents 1 and 2, for example, a method of scraping the tip of the bump by cutting can be employed.

Japanese Patent Application Laid-Open No. 2000-173954 JP 2004-319697 A

  The above document describes a method in which a wafer is adsorbed and held on a vacuum chuck table, and a surface bump or a resin in which the bump is buried is scraped off with a cutting tool such as a rotating carbide tool. . In such a method, the suction surface of the suction table serves as a reference surface, and the surface of the wafer is processed to be flat. Accordingly, the thickness of the metal or resin portion becomes uniform. Therefore, when it is assumed that the suction surface of the suction table and the cutting plane formed by the rotation trajectory of the cutting tool are parallel, the wafer is processed to have a uniform thickness.

  However, in the case of wafers made of materials, the surface of the wafer, excluding the metal and resin parts, is not parallel to the back surface, but is inclined, and the degree of inclination is different. There may be. When the thickness of the wafer is not uniform, the surface of the metal or resin is processed in parallel with the back surface, but the height is not uniform. That is, the metal and resin portions on the surface are uneven in thickness, and there is a problem that when these portions are required to have a uniform thickness, it cannot be met.

  Therefore, according to the present invention, when the additional portion such as metal or resin formed on the surface of the substrate such as the semiconductor wafer is cut, even if the thickness of the substrate excluding the additional portion is not uniform, the additional portion is not thick. An object of the present invention is to provide a substrate cutting method and a cutting apparatus capable of uniformly processing the substrate.

  According to the substrate cutting method of the present invention, a substrate having an additional portion made of metal, resin, or the like formed on the surface is adsorbed and held by aligning the back surface of the substrate with the adsorption surface of the adsorption table, and disposed opposite to the adsorption table. A substrate cutting method in which the surface of the additional portion is cut by pressing the applied cutting tool against the additional portion while rotating, and the suction table is swingably supported so that the facing angle with respect to the cutting tool can be adjusted. Then, the height of the surface of the additional portion of the substrate held on the suction surface of this suction table is measured at at least three measurement points, and based on these height measurements, the surface of the additional portion is measured by the cutting tool. The suction table is swung so as to be parallel to the cutting plane formed by the rotation trajectory, and the facing angle of the suction table to the cutting tool is adjusted. Thereafter, the surface of the additional portion of the substrate is moved by the cutting tool. It is characterized in that cut.

  The present invention uses the cutting plane formed by the rotation trajectory of the cutting tool as a reference plane, measures the parallelism of the surface of the additional portion with respect to the reference plane, and based on the measured value, the surface of the additional portion is parallel to the reference plane. Thus, after adjusting the facing angle of the suction table with respect to the cutting tool, the additional portion is cut. By this method, a uniform amount can be cut from the surface of the additional portion, and the thickness of the additional portion can be made uniform.

  The substrate cutting apparatus that can suitably carry out the cutting method of the present invention is also the present invention and is characterized by the following configuration. A substrate cutting device that cuts the surface of a substrate having an additional portion made of metal, resin, or the like on the surface, and a suction table that is supported in a swingable manner and has a suction surface that sucks and holds the substrate, and A rotary cutting tool arranged to face the suction surface of the suction table and cutting the surface of the substrate held by the suction table and the suction table are swung to adjust the facing angle of the suction surface to the cutting tool. A suction table angle adjusting means and a height measuring means for measuring the height of the surface of the substrate held on the suction table at at least three measurement points.

  Specific examples of the suction table angle adjusting means of the cutting apparatus according to the present invention include support means for supporting the suction table at appropriately spaced three support points set on the back surface of the suction table, and these support means Among them, at least two of them have a movable mechanism for moving the suction table back and forth with respect to the cutting tool. This adjustment means has the simplest configuration in which the suction table is supported by one support means so as to be swingable, and the suction table is supported by two support means having a movable mechanism. A position that is a vertex of an equilateral triangle is preferable because a measurement value with less bias can be obtained. According to this adjusting means, by operating the movable mechanism, the suction table swings with one fixed supporting means as a fulcrum, and the facing angle with respect to the cutting tool is adjusted.

  When the support point of the suction table by the suction table angle adjusting means is set at a position corresponding to the measurement point of the height measuring means, the adjustment amount based on the measurement value is directly reflected in the operation amount of the movable mechanism. This is preferable because the angle of the suction table can be easily adjusted.

  In the cutting device of the present invention, the operation can be automated by adjusting the angle of the suction table by the control means. The control means, based on the measurement value of the surface height of the substrate at each measurement point measured by the height measurement means, the surface of the substrate held by the suction table is a cutting plane consisting of the rotation trajectory of the cutting tool. The amount of advancement / retraction with respect to the cutting tool of the suction table by the movable mechanism is calculated so as to be parallel, and the movable mechanism is operated according to the calculated value.

  According to the present invention, the cutting plane formed by the rotation trajectory of the cutting tool is used as a reference plane, the parallelism of the surface of the additional portion of the substrate with respect to the reference plane is measured, and based on the measured value, the surface of the additional portion is the cutting plane. Since the additional part is cut after adjusting the facing angle of the suction table to the cutting tool so that it is parallel to the cutting tool, even if the thickness of the substrate excluding the additional part is not uniform, it is uniform from the surface of the additional part It is possible to make the thickness of the additional part uniform by cutting a small amount

Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
[1] Semiconductor wafer (substrate)
Reference numeral 1 in FIG. 1 indicates a disk-shaped semiconductor wafer (hereinafter, abbreviated as a wafer) on which cutting is performed in one embodiment. As shown in the figure, a plurality of semiconductor chips 2 are formed in a lattice pattern on the surface of the wafer 1. On the surface of each semiconductor chip 2, as shown in the enlarged portion of FIG. 1 and FIG. 2, a plurality of bumps 3 having a fine pin shape are formed protrudingly. These bumps 3 are bonded to electrodes of an electronic circuit formed on the semiconductor chip 2. Further, as shown in FIG. 2, a resin film 4 covering the bumps 3 is formed on the surface of the wafer 1. The resin film 4 is formed leaving a slight outer peripheral portion of the surface of the wafer 1. In the following description, both the bump 3 and the resin film 4 may be collectively referred to as an additional portion 5. The thickness of the additional portion 5 is substantially uniform.

[2] Configuration of Cutting Device The bumps 3 formed on the surface of the wafer 1 are scraped off together with the resin film 4 to make the height uniform, and the resin film 4 is processed flat accordingly. FIG. 3 shows a cutting device 10 according to an embodiment of the present invention suitable for the machining. Reference numeral 11 in FIG. 3 is a base mainly composed of a rectangular parallelepiped portion having a horizontal upper surface. The base 11 has a wall portion 12 standing perpendicular to the upper surface at one end portion in the longitudinal direction. In FIG. 3, the longitudinal direction, the width direction, and the vertical direction of the base 11 are indicated by arrows Y, X, and Z, respectively.

The upper surface of the base 11 has a processing area 11A from the substantially central portion in the longitudinal direction to the wall 12 side, and the opposite side supplies the unprocessed wafer 1 to the processing area 11A and collects the processed wafer 1. Supply / recovery area 11B.
Hereinafter, various mechanisms provided in the cutting apparatus 10 will be described separately for those provided in the processing area 11A and those provided in the supply / recovery area 11B.

(A) Mechanism of processing area As shown in FIG. 3, a rectangular recess 13 is formed in the processing area 11 </ b> A, and a disc-shaped chuck is placed in the recess 13 via a movable table 14. A table (suction table) 15 is provided to be movable in the Y direction. The moving table 14 is slidably attached to a guide rail that extends in the Y direction and is arranged in the base 11, and is reciprocated in the same direction by an appropriate drive mechanism (not shown).

  One end of bellows-like covers 16 and 17 is attached to both ends of the moving table 14 in the moving direction, and the other ends of the covers 16 and 17 are opposed to the inner surface of the wall portion 12 and the wall portion 12. It is attached to the inner wall surface of the recess 13 to be respectively. These covers 16 and 17 cover the moving path of the moving table 14 and prevent cutting chips and the like from falling on the moving path, and expand and contract as the moving table 14 moves.

  The chuck table 15 is provided on the movable table 14 so as to be swingable and non-rotatable with the suction surface 15a facing upward. The wafer 1 is sucked and held on the chuck table 15 by a vacuum chuck method with the surface on which the additional portion 5 is formed facing upward. The chuck table 15 moves to the wall 12 side and is positioned at a predetermined processing position. A cutting unit (cutting means) 20 is disposed above the processing position. The cutting unit 20 is attached to the wall portion 12 via a moving plate 32 and a guide rail 31 so as to be movable up and down, and is moved up and down by a feed mechanism 30.

  As shown in FIGS. 4 and 5, the chuck table 15 is supported by one fixed shaft 40 </ b> A and two movable shafts: a first movable shaft 40 </ b> B and a second movable shaft 40 </ b> C incorporated in the movable table 14. Each of the shafts 40 </ b> A to 40 </ b> C has an axial direction extending in the Z direction, and is arranged at a position that is a vertex of an equilateral triangle centering on the rotation center of the chuck table 15.

  As shown in FIG. 4 (A), the fixed shaft 40A has a pivot 41 formed on the upper end thereof fitted in a bearing hole 19a formed on the lower surface side of the chuck table 15, and the pivot 41 is used as a fulcrum. The chuck table 15 swings. The first and second movable shafts 40B and 40C are mounted on the movable table 14 in a state where the first and second movable shafts 40B and 40C are rotatable and restricted in movement in the axial direction. These movable shafts 40B and 40C have screw portions 42 formed on the upper ends thereof screwed into screw holes 43 formed on the lower surface side of the chuck table 15, and through a reduction gear train 44 provided on the lower end portions. It is rotated by motors 45B and 45C, respectively. The operation of these motors 45B and 45C is controlled by the control unit 70.

  When the first movable shaft 40B and the second movable shaft 40C rotate, the movable shaft mounting portion of the chuck table 15 moves up and down according to the rotation direction, and the chuck table 15 as a whole uses the pivot 41 of the fixed shaft 40A as a fulcrum. Swing. The chuck table 15 has a basic state where the suction surface 15a is horizontal, and swings by appropriately operating the two movable shafts 45B and 45C, thereby adjusting the facing angle of the suction surface 15a with respect to the cutting unit 20. Is done.

  The cutting unit 20 includes a cylindrical housing 22 whose axial direction extends in the Z direction, a rotary shaft 23 that is coaxially and rotatably supported by the housing 22, and a servo motor 24 that rotationally drives the rotary shaft 23. And a disc-shaped wheel mount 25 coaxially fixed to the lower end of the rotating shaft 23, and the housing 22 is fixed to the moving plate 32 via a block 34. The wheel mount 25 is rotated by the servo motor 24 in the direction of the arrow in FIG. 3 (described on the upper surface of the wheel mount 25). As shown in FIG. 6, a cutting tool 26 having a blade portion made of diamond or the like is detachably attached to the lower surface of the wheel mount 25, and the workpiece is cut by the cutting tool 26. The cutting plane formed by the rotation trajectory of the cutting tool 26 that rotates together with the wheel mount 25 is set to be horizontal or nearly horizontal.

  The chuck table 15 is moved between a machining position immediately below the cutting unit 20 and a wafer attaching / detaching position that is separated from the wall 12 by a predetermined distance. The chuck table 15 and the cutting unit 20 are in a positional relationship in which the movement trajectory of the center of the chuck table 15 intersects the Z-axis direction line passing through the rotation center of the wheel mount 25 at a right angle.

  At the wafer attaching / detaching position, the wafer 1 to be cut is placed on the chuck table 15, and the wafer 1 after the cutting is removed from the chuck table 15. At the wafer attaching / detaching position, a height measuring unit 50 (height measuring means) for measuring the height of the chuck table 15 at the wafer attaching / detaching position and the height of the wafer 1 held by the chuck table 15 is disposed. ing.

  As shown in FIG. 3, the height measuring unit 50 includes a frame 51 fixed to the base 11 and three length measuring devices 52 attached to the frame 51. As shown in FIG. 7, in the length measuring device 52, a thin rod-shaped measuring terminal 52b protrudes from a lower end portion of a cylindrical main body 52a fixed to the frame 51 in a state where the axial direction is parallel to the Z direction. It is what.

  The measurement terminal 52b can be moved up and down, and the measurement point of the object to be measured is brought into contact with the tip thereof, and the height of the object at that time is measured by the length measuring device 52. Specifically, as this length measuring device 52, a contact type linear gauge: DG-10B (manufactured by Sony Manufacturing Systems) or the like is preferably used. As the length measuring device 52, a non-contact type laser displacement meter, a back pressure sensor, a capacitance sensor, and the like can be used in addition to such a contact type.

  The height of the surface of the wafer 1 on the chuck table 15 at the attachment / detachment position is measured by the three length measuring devices 52 of the height measuring unit 50. The measuring points of these length measuring devices 52 are shown in FIG. Thus, the position corresponding to the fixed shaft 40A and the two movable shafts 40B and 40C, that is, the position immediately above the fixed shaft 40A and the movable shafts 40B and 40C is set. A, B, and C in FIG. 5 indicate measurement points. Therefore, the three length measuring devices 52 are arranged to form an equilateral triangle. In FIG. 7, the length measuring devices 52 arranged on the fixed shaft 40A and the movable shafts 40B and 40C are denoted by reference numerals 52A, 52B and 52C corresponding to the measurement points A, B and C, respectively.

  Measurement values obtained by the length measuring devices 52A to 52C are supplied to the control unit 70 and stored in a storage unit included in the control unit 70. Based on the measurement value, the controller 70 moves the chuck table 15 up and down by the movable shafts 40B and 40C so that the surface of the wafer 1 is parallel to the cutting plane formed by the rotating tool 26 of the cutting unit 20. Further, an operation signal is output to each of the motors 45B and 45C so that a rotation operation (rotation direction and number of rotations) according to the calculated value is performed.

(B) Mechanism of Supply / Recovery Area As shown in FIG. 3, a rectangular recess 18 is formed in the supply / recovery area 11 </ b> B. A transfer mechanism 60 in which a fork 60b is mounted is installed at the tip of a node link type horizontal turning arm 60a.

  A supply arm 63 having a suction plate 63b attached to the front end of the cassette 61, the alignment table 62, and the horizontal turning arm 63a of the first node is disposed around the recess 18 counterclockwise as viewed from above. The recovery arm 64 having the same structure as the supply arm 63, the horizontal turning arm 64a and the suction plate 64b, the spinner type cleaning device 65, and the cassette 66 are arranged.

  The cassette 61, the alignment table 62 and the supply arm 63 are means for supplying the wafer 1 to the chuck table 15, and the recovery arm 64, the cleaning device 65 and the cassette 66 recover the processed wafer 1 from the chuck table 15. Means. Although the two cassettes 61 and 66 have the same structure, they will be referred to as a supply cassette 61 and a recovery cassette 66 according to applications. These cassettes 61 and 66 are for accommodating and carrying a plurality of wafers 1 and are set at predetermined positions on the base 11.

  A plurality of unprocessed wafers 1 are accommodated in the supply cassette 61 in a stacked state. The transfer mechanism 60 takes out one wafer 1 from the supply cassette 61 by raising / lowering and turning the arm 60a and gripping the fork 60b, and further raises the wafer 1 on the surface on which the additional portion 5 is formed. And has a function of being placed on the alignment table 62 in a state of being directed to.

  On the alignment table 62, the wafer 1 is placed in a fixed state. The supply arm 63 sucks the wafer 1 on the alignment table 62 to the suction plate 63b, turns the arm 63a, places the wafer 1 on the chuck table 15, lowers the horizontal turning arm 63a, and then sucks it. By stopping the operation, it has a function of placing the wafer 1 on the chuck table 15.

  The recovery arm 64 has a function of sucking the processed wafer 1 from the chuck table 15 onto the suction plate 64b, turning the arm 64a, and transferring the wafer 1 into the cleaning device 65. The cleaning device 65 has a function of rotating the wafer 1 and shaking off the water after the wafer 1 is washed with water. The wafer 1 cleaned by the cleaning device 65 is transferred and accommodated in the collection cassette 66 by the transfer mechanism 60.

  When the wafer 1 is attached to or detached from the chuck table 15 by the supply arm 63 and the recovery arm 64, the movable table 14 is stopped at the wafer attachment / detachment position. In addition, a nozzle 67 that cleans the chuck table 15 by spraying high-pressure air onto the chuck table 15 is disposed between the supply arm 63 and the recovery arm 64. Cleaning of the chuck table 15 by the nozzle 67 is performed on the chuck table 15 at the wafer attachment / detachment position.

[3] Cutting of Wafer by Cutting Device Next, a method of using and operating the cutting device 10 having the above configuration will be described below. In the operation described here, the step of measuring the height of the surface of the wafer 1 with the length measuring devices 52A to 52C of the height measuring unit 50 and cutting the surface of the wafer 1 based on the measured value is the present invention. This is a specific example of the cutting method.

  First, prior to cutting the wafer 1, the space between the cutting tool 20 of the cutting unit 20 and the suction surface 15 a of the chuck table 15 is made uniform so that the cutting plane by the cutting tool 26 and the suction surface 15 a are parallel to each other. Self-cutting is performed in which the surface 15a is cut by the cutting unit 20 itself.

  In self-cutting, first, the cutting unit 20 is lowered by the feed mechanism 30 to rotate the wheel mount 25 and the cutting tool 26 until the cutting tool 26 can cut the entire surface of the chuck table 15 to a predetermined thickness. From this state, the chuck table 15 is moved from the attachment / detachment position toward the machining position, and the chuck table 15 is moved in the direction of the wall 12 until the entire surface of the chuck table 15 is cut by the cutting tool 26. When the self-cutting of the chuck table 15 is finished, the chuck table 15 is returned to the attaching / detaching position.

  Next, the height of the suction surface 15a of the chuck table 15 is measured by each of the length measuring devices 52A to 52C of the height measuring unit 50. These measured values are supplied to the control unit 70 and stored as reference values (a, b, c). Since the suction surface 15a of the chuck table 15 at this time is parallel to the cutting plane of the cutting tool 26 by the self-cutting, the measured reference value is regarded as a value representing the cutting plane of the cutting tool 26, that is, the reference plane.

  On the other hand, in the supply / recovery area, one wafer 1 is taken out by the transfer mechanism 60 from the supply cassette 61 in which a plurality of wafers 1 are accommodated, and the wafer 1 is directed upward by the transfer mechanism 60. In this state, it is moved to the alignment table 62 and positioned. Next, the wafer 1 is moved from the alignment table 62 by the supply arm 63 to the center of the chuck table 15 with its surface facing up. Then, the air suction operation of the chuck table 15 is started, and the wafer 1 is sucked and held on the chuck table 15.

  When the wafer 1 is held on the chuck table 15 in the attaching / detaching position in this way, the measuring points A, The heights at B and C are measured. These measured values (Δa, Δb, Δc) are supplied to the control unit 70, and the control unit 70 determines the reference value (a, b, c) and the measured value (Δa, Δb) for each measurement point A, B, C. , [Delta] c) (a- [Delta] a, b- [Delta] b, c- [Delta] c) are calculated, and the calculated values are common to the measurement point A corresponding to the fixed shaft 40A. Correction values of the measurement points B and C corresponding to the axes 40B and 40C are obtained.

  For example, when (a−Δa, b−Δb, c−Δc) is (−3 μm, +2 μm, 0 μm), the correction value is (0 μm) in order to set the common value of the differences to −3 μm of the measurement point A. , −5 μm, −3 μm). As for the correction values + and-, + is ascending and-is descending, and the control unit 70 controls each motor 45B, so that a rotation operation (rotation direction and number of rotations) corresponding to the amount of elevation is performed. An operation signal is output to 45C. As a result, the chuck table 15 swings and tilts, and the surface of the additional portion 5 of the wafer 1 is parallel to the suction surface 15a of the chuck table 15, that is, the cutting plane of the cutting tool 26.

  Next, the chuck table 15 is moved to the processing position, and the cutting unit 20 on which the wheel mount 25 rotates is lowered, and the surface of the wafer 1, that is, the surface of the bump 3 and the resin film 4 constituting the additional portion 5 by the cutting tool 26. Is cut to a predetermined thickness. Since the surface of the additional portion 5 is set parallel to the cutting plane of the cutting tool 26 by the above control, the thickness of the additional portion 5 after cutting is kept uniform.

  Next, the height of the cutting unit 20 is adjusted by the feed mechanism 30 so that the cutting amount of the additional portion 5 by the cutting tool 26 becomes a predetermined amount, and the wheel mount 25 is rotated. From this state, the moving table 14 is moved in the direction of the machining position, and the wafer 1 held on the chuck table 15 is sent to the machining position at a predetermined speed. Thereby, the surface of the additional portion 5 of the wafer 1 is gradually scraped off from the outer peripheral edge side on the wall portion 12 side by the rotating cutting tool 26. When the cutting starts and the distance corresponding to the diameter of the wafer 1 moves, the entire surface of the additional portion 5 is cut. As an example of suitable cutting conditions, the rotational speed of the cutting tool 26 by the servo motor 24 is about 2000 RPM, and the feed speed of the wafer 1 by the movement of the stage 14 is 0.66 mm / second.

  When the additional portion 5 is cut to a predetermined thickness, the cutting unit 20 is raised to finish cutting. Subsequently, the chuck table 15 is moved to the attachment / detachment position, and the height of the three points of the additional portion 5 is again measured by the length measuring devices 52A to 52C while the wafer 1 is continuously held on the chuck table 15. The parallelism of the part 5 is confirmed. If the heights of the three measurement points A, B, and C are uniform, the cutting is completed. If not, the tilt operation of the chuck table 15 is performed once again from the three height measurements, and again. Cut. When the cutting is completed, the suction operation is stopped and the holding state of the wafer 1 on the chuck table 15 is released.

The wafer 1 released from the chuck table 15 is moved from the attachment / detachment position to the cleaning device 65 by the recovery arm 64, and then washed with water and then the water is removed. Then, the transfer mechanism 60 puts the wafer 1 into the recovery cassette 66. Moved and contained.
The above is a cycle in which the additional portion 5 is cut with respect to one wafer 1 and then washed and collected. This cycle is repeated.

[4] Effect The method of cutting the surface of the wafer 1 as described above uses the suction surface 15a of the chuck table 15 parallel to the cutting plane formed by the rotation trajectory of the cutting tool 26 as a reference surface, and the surface of the additional portion 5 is parallel to this reference surface. After measuring the degree, and adjusting the facing angle of the chuck table 15 to the cutting tool 26 so that the surface of the additional portion 5 is parallel to the cutting plane, the additional portion 5 is cut. is there. By this method, a uniform amount can be cut from the surface of the additional portion 5, and the thickness of the additional portion 5 can be made uniform.

  In the present embodiment, the measurement points A, B, and C for measuring the height of the wafer 1 are located at the vertices of an equilateral triangle that is evenly distributed on the surface of the wafer 1, so that a measurement value with little deviation can be obtained. In addition, since the fixed shaft 40A, the first movable shaft 40B, and the second movable shaft 40C that support the chuck table 15 are positioned directly below the measurement points A, B, and C, the chuck table 15 based on the measured values. Can be directly reflected in the motors 45B and 45C. For example, if it is determined that a 3 μm increase is required at the measurement point B, for example, the motor 45B may be rotated so that the first movable shaft 40B is increased by 3 μm. In the case where the first movable shaft 40B is located at the above position, the rising amount of the first movable shaft 40B is obtained by complicated calculation. Therefore, the angle of the chuck table 15 can be adjusted relatively easily by making the measurement points A, B, and C correspond to the fixed shaft 40A and the movable shafts 40B and 40C as in this embodiment.

  In the above embodiment, a semiconductor wafer is taken up as a substrate. However, the substrate handled in the present invention is not limited to this. For example, a wiring is formed on a ceramic base material or an electronic component is mounted. Various types of substrates, such as sushi, can be targeted.

It is a top view of the semiconductor wafer by which the surface is cut by one Embodiment of this invention. It is an expanded sectional view of the semiconductor wafer shown in FIG. 1 is an overall perspective view of a cutting device according to an embodiment of the present invention. 4A and 4B are partial cross-sectional side views showing a support structure of the chuck table of the cutting apparatus shown in FIG. 3, in which FIG. 3A shows a state in which a wafer is held on an initially set chuck table, and FIG. The state after the angle adjustment made parallel to is shown. FIG. 4 is a plan view showing a state in which the semiconductor wafer is held on the chuck table of the cutting apparatus shown in FIG. 3, and shows an arrangement of three measurement points by the height measurement unit and a fixed shaft and a movable shaft that support the chuck table from the back side. . It is a side view which shows the state which cuts a semiconductor wafer with the cutting device shown in FIG. It is a side view which shows the state which is measuring the surface of a wafer with three length measuring devices of the height measurement unit which the cutting device shown in FIG. 3 comprises.

Explanation of symbols

1 ... Semiconductor wafer (substrate)
3 ... Bump (metal)
DESCRIPTION OF SYMBOLS 4 ... Resin film 5 ... Additional part 10 ... Cutting device 15 ... Chuck table (adsorption table)
20 ... Cutting unit 26 ... Bite (cutting tool)
40B... First movable shaft (suction table angle adjusting means, support means, movable mechanism)
40C ... second movable shaft (suction table angle adjusting means, support means, movable mechanism)
50 ... Height measuring unit (height measuring means)
52 (52A, 52B, 52C) ... length measuring device 70 ... control unit (control means)
A, B, C ... Measurement points

Claims (5)

The substrate on which an additional portion made of metal, resin, or the like is formed on the surface is adsorbed and held by aligning the back surface of the substrate with the adsorption surface of the adsorption table, and the cutting tool disposed opposite to the adsorption table is rotated while rotating the cutting tool. A method of cutting a substrate by cutting the surface of the additional portion by pressing against the additional portion,
The suction table is supported so as to be swingable so that a facing angle with respect to the cutting tool can be adjusted,
The height of the surface of the additional portion of the substrate held on the suction surface of the suction table is measured at at least three measurement points,
Based on these height measurement values, the suction table is swung so that the surface of the additional portion is parallel to the cutting plane formed by the rotation trajectory of the cutting tool, and the cutting tool of the suction table is moved. Adjust the facing angle with respect to
Thereafter, the surface of the additional portion of the substrate is cut with the cutting tool. A substrate cutting device for cutting the surface of a substrate on which an additional portion made of metal, resin, or the like is formed on the surface,
A suction table supported in a swingable manner and having a suction surface for sucking and holding the substrate;
A rotary cutting tool arranged to face the suction surface of the suction table and cut the surface of the substrate held by the suction table;
A suction table angle adjusting means for adjusting a facing angle of the suction surface to the cutting tool by swinging the suction table;
A substrate cutting apparatus, comprising: a height measuring unit that measures the height of the surface of the substrate held on the suction table at at least three measurement points.   The suction table angle adjusting means includes support means for supporting the suction table at at least three support points that are appropriately spaced apart set on the back surface of the suction table, and at least two of these support means are provided with suction The substrate cutting apparatus according to claim 2, further comprising a movable mechanism that moves the table forward and backward with respect to the cutting tool.   4. The substrate cutting apparatus according to claim 3, wherein the support point of the suction table angle adjusting means is set at a position corresponding to the measurement point of the height measuring means. Based on the measurement value of the surface height of the substrate at each measurement point measured by the height measuring means, the surface of the substrate held on the suction table is a cutting plane formed by a rotation trajectory of the cutting tool; 4. A control unit that calculates an advance / retreat amount of the suction table by the movable mechanism with respect to the cutting tool so as to be parallel, and causes the movable mechanism to perform an operation according to the calculated value. Or the substrate cutting apparatus according to 4.

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