JP2007053355A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2007053355A JP2007053355A JP2006199839A JP2006199839A JP2007053355A JP 2007053355 A JP2007053355 A JP 2007053355A JP 2006199839 A JP2006199839 A JP 2006199839A JP 2006199839 A JP2006199839 A JP 2006199839A JP 2007053355 A JP2007053355 A JP 2007053355A
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- channel formation
- formation region
- insulating film
- electrode
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- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
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- 238000005070 sampling Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Landscapes
- Shift Register Type Memory (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006199839A JP2007053355A (ja) | 2005-07-22 | 2006-07-21 | 半導体装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
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| JP2005212200 | 2005-07-22 | ||
| JP2006199839A JP2007053355A (ja) | 2005-07-22 | 2006-07-21 | 半導体装置 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2012202525A Division JP2012256940A (ja) | 2005-07-22 | 2012-09-14 | 半導体装置 |
| JP2013238604A Division JP2014044439A (ja) | 2005-07-22 | 2013-11-19 | 表示装置 |
Publications (2)
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| JP2007053355A true JP2007053355A (ja) | 2007-03-01 |
| JP2007053355A5 JP2007053355A5 (enExample) | 2009-09-03 |
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| JP2006199839A Withdrawn JP2007053355A (ja) | 2005-07-22 | 2006-07-21 | 半導体装置 |
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| JP (1) | JP2007053355A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014014039A1 (en) * | 2012-07-20 | 2014-01-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device including the display device |
| JP2018028663A (ja) * | 2016-08-18 | 2018-02-22 | 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． | ディスプレイ装置 |
| JP2020038376A (ja) * | 2013-10-10 | 2020-03-12 | 株式会社半導体エネルギー研究所 | 液晶表示装置及び発光装置 |
| WO2026153070A1 (zh) * | 2025-01-15 | 2026-07-23 | 荣耀终端股份有限公司 | 晶体管、驱动背板、显示屏和电子设备 |
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| JPH0982969A (ja) * | 1995-09-12 | 1997-03-28 | Toshiba Corp | 薄膜トランジスタおよび液晶表示装置 |
| JPH09251996A (ja) * | 1995-06-20 | 1997-09-22 | Semiconductor Energy Lab Co Ltd | 半導体装置の製造方法 |
| JPH10268335A (ja) * | 1997-03-27 | 1998-10-09 | Semiconductor Energy Lab Co Ltd | コンタクト構造 |
| JP2003031587A (ja) * | 2001-07-17 | 2003-01-31 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP2005159368A (ja) * | 2003-11-27 | 2005-06-16 | Samsung Sdi Co Ltd | 平板表示装置 |
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| JPH09251996A (ja) * | 1995-06-20 | 1997-09-22 | Semiconductor Energy Lab Co Ltd | 半導体装置の製造方法 |
| JPH0982969A (ja) * | 1995-09-12 | 1997-03-28 | Toshiba Corp | 薄膜トランジスタおよび液晶表示装置 |
| JPH10268335A (ja) * | 1997-03-27 | 1998-10-09 | Semiconductor Energy Lab Co Ltd | コンタクト構造 |
| JP2003031587A (ja) * | 2001-07-17 | 2003-01-31 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP2005159368A (ja) * | 2003-11-27 | 2005-06-16 | Samsung Sdi Co Ltd | 平板表示装置 |
Cited By (14)
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|---|---|---|---|---|
| US11209710B2 (en) | 2012-07-20 | 2021-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device including the display device |
| US12210257B2 (en) | 2012-07-20 | 2025-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device including the display device |
| US11899328B2 (en) | 2012-07-20 | 2024-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device including the display device |
| US10514579B2 (en) | 2012-07-20 | 2019-12-24 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device including the display device |
| US10514580B2 (en) | 2012-07-20 | 2019-12-24 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device including the display device |
| US9298057B2 (en) | 2012-07-20 | 2016-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device including the display device |
| US11531243B2 (en) | 2012-07-20 | 2022-12-20 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device including the display device |
| WO2014014039A1 (en) * | 2012-07-20 | 2014-01-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device including the display device |
| JP2020038376A (ja) * | 2013-10-10 | 2020-03-12 | 株式会社半導体エネルギー研究所 | 液晶表示装置及び発光装置 |
| US11764074B2 (en) | 2013-10-10 | 2023-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2018028663A (ja) * | 2016-08-18 | 2018-02-22 | 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． | ディスプレイ装置 |
| US12127450B2 (en) | 2016-08-18 | 2024-10-22 | Samsung Display Co., Ltd. | Display apparatus having reduced defects |
| JP7117833B2 (ja) | 2016-08-18 | 2022-08-15 | 三星ディスプレイ株式會社 | ディスプレイ装置 |
| WO2026153070A1 (zh) * | 2025-01-15 | 2026-07-23 | 荣耀终端股份有限公司 | 晶体管、驱动背板、显示屏和电子设备 |
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