JP2007053195A5 - - Google Patents

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Publication number
JP2007053195A5
JP2007053195A5 JP2005236591A JP2005236591A JP2007053195A5 JP 2007053195 A5 JP2007053195 A5 JP 2007053195A5 JP 2005236591 A JP2005236591 A JP 2005236591A JP 2005236591 A JP2005236591 A JP 2005236591A JP 2007053195 A5 JP2007053195 A5 JP 2007053195A5
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JP
Japan
Prior art keywords
tab
semiconductor device
manufacturing
groove
semiconductor chip
Prior art date
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Granted
Application number
JP2005236591A
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Japanese (ja)
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JP4668729B2 (en
JP2007053195A (en
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Publication date
Application filed filed Critical
Priority to JP2005236591A priority Critical patent/JP4668729B2/en
Priority claimed from JP2005236591A external-priority patent/JP4668729B2/en
Publication of JP2007053195A publication Critical patent/JP2007053195A/en
Publication of JP2007053195A5 publication Critical patent/JP2007053195A5/ja
Application granted granted Critical
Publication of JP4668729B2 publication Critical patent/JP4668729B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Claims (15)

(a)一方の面にダイアタッチフィルムを貼り付けた半導体チップと、
(b)前記半導体チップを、前記ダイアタッチフィルムを介して搭載するタブと、
(c)前記タブの周囲に配置された複数のリードと、
(d)前記複数のリードと前記半導体チップを接続する複数のワイヤと、
(e)前記半導体チップを封止する樹脂とを備え、
前記タブは枠形状をしていることを特徴とする半導体装置。
(A) a semiconductor chip having a die attach film attached to one surface;
(B) a tab for mounting the semiconductor chip via the die attach film;
(C) a plurality of leads disposed around the tab;
(D) a plurality of wires connecting the plurality of leads and the semiconductor chip;
(E) a resin for sealing the semiconductor chip;
2. The semiconductor device according to claim 1, wherein the tab has a frame shape.
前記タブの主面には、溝が形成されていることを特徴とする請求項1記載の半導体装置。   The semiconductor device according to claim 1, wherein a groove is formed in a main surface of the tab. 前記溝は、エッチングにより形成されていることを特徴とする請求項2記載の半導体装置。   The semiconductor device according to claim 2, wherein the groove is formed by etching. 前記タブは、長方形の枠形状をしており、前記タブの長辺側に前記溝が形成されていることを特徴とする請求項2記載の半導体装置。   The semiconductor device according to claim 2, wherein the tab has a rectangular frame shape, and the groove is formed on a long side of the tab. 枠形状をした前記タブの四辺に前記溝が形成されていることを特徴とする請求項2記載の半導体装置。   3. The semiconductor device according to claim 2, wherein the groove is formed on four sides of the tab having a frame shape. 前記タブは、少なくとも前記半導体チップに形成されたボンディングパッドの直下に形成されていることを特徴とする請求項1記載の半導体装置。   2. The semiconductor device according to claim 1, wherein the tab is formed at least immediately below a bonding pad formed on the semiconductor chip. 前記複数のリードおよび前記タブは、銅を主成分とする材料から構成されていることを特徴とする請求項1記載の半導体装置。   2. The semiconductor device according to claim 1, wherein the plurality of leads and the tab are made of a material mainly composed of copper. (a)枠形状のタブを有するリードフレームを用意する工程と、
(b)ダイアタッチフィルムを貼り付けた半導体チップを前記タブ上に搭載する工程と、
(c)前記タブの周囲に配置された複数のリードと前記半導体チップとを複数のワイヤで接続する工程と、
(d)前記半導体チップを封止する工程とを備えることを特徴とする半導体装置の製造方法。
(A) preparing a lead frame having a frame-shaped tab;
(B) mounting a semiconductor chip with a die attach film on the tab;
(C) connecting a plurality of leads arranged around the tab and the semiconductor chip with a plurality of wires;
(D) A method for manufacturing a semiconductor device, comprising: sealing the semiconductor chip.
前記タブの主面には、溝が形成されていることを特徴とする請求項8記載の半導体装置の製造方法。   9. The method of manufacturing a semiconductor device according to claim 8, wherein a groove is formed on a main surface of the tab. 前記溝はエッチングにより形成されていることを特徴とする請求項9記載の半導体装置の製造方法。   The method of manufacturing a semiconductor device according to claim 9, wherein the groove is formed by etching. 前記タブは、長方形の枠形状をしており、前記タブの長辺側に前記溝が形成されていることを特徴とする請求項9記載の半導体装置の製造方法。   The method for manufacturing a semiconductor device according to claim 9, wherein the tab has a rectangular frame shape, and the groove is formed on a long side of the tab. 前記(d)工程は、前記タブの長辺側から樹脂を流入することを特徴とする請求項11記載の半導体装置の製造方法。   12. The method of manufacturing a semiconductor device according to claim 11, wherein in the step (d), resin is introduced from a long side of the tab. 枠形状をした前記タブの四辺に前記溝が形成されていることを特徴とする請求項記載の半導体装置の製造方法。 10. The method of manufacturing a semiconductor device according to claim 9 , wherein the groove is formed on four sides of the tab having a frame shape. 前記(d)工程は、前記タブの角部から樹脂を流入することを特徴とする請求項13記載の半導体装置の製造方法。   14. The method of manufacturing a semiconductor device according to claim 13, wherein in the step (d), a resin is introduced from a corner portion of the tab. さらに、
(e)前記半導体チップを封止することにより形成された半導体装置を、鉛を含有しない半田を介して実装基板に実装することを特徴とする請求項8記載の半導体装置の製造方法。
further,
9. The method of manufacturing a semiconductor device according to claim 8, wherein the semiconductor device formed by sealing the semiconductor chip is mounted on a mounting substrate via solder not containing lead.
JP2005236591A 2005-08-17 2005-08-17 Manufacturing method of semiconductor device Expired - Fee Related JP4668729B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005236591A JP4668729B2 (en) 2005-08-17 2005-08-17 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005236591A JP4668729B2 (en) 2005-08-17 2005-08-17 Manufacturing method of semiconductor device

Publications (3)

Publication Number Publication Date
JP2007053195A JP2007053195A (en) 2007-03-01
JP2007053195A5 true JP2007053195A5 (en) 2008-10-02
JP4668729B2 JP4668729B2 (en) 2011-04-13

Family

ID=37917443

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005236591A Expired - Fee Related JP4668729B2 (en) 2005-08-17 2005-08-17 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JP4668729B2 (en)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6215844A (en) * 1985-07-15 1987-01-24 Hitachi Ltd Semiconductor lead frame
JPS63248155A (en) * 1987-04-03 1988-10-14 Mitsubishi Electric Corp Semiconductor device
US5233222A (en) * 1992-07-27 1993-08-03 Motorola, Inc. Semiconductor device having window-frame flag with tapered edge in opening
JPH06236899A (en) * 1992-09-29 1994-08-23 Toshiba Corp Resin sealed type semiconductor device
JPH06268146A (en) * 1993-03-15 1994-09-22 Toshiba Corp Semiconductor device
JPH10303352A (en) * 1997-04-22 1998-11-13 Toshiba Corp Semiconductor device and manufacture of semiconductor device
JP3605651B2 (en) * 1998-09-30 2004-12-22 日立化成工業株式会社 Method for manufacturing semiconductor device
JP3062691B1 (en) * 1999-02-26 2000-07-12 株式会社三井ハイテック Semiconductor device
JP3895570B2 (en) * 2000-12-28 2007-03-22 株式会社ルネサステクノロジ Semiconductor device
JP2003332522A (en) * 2002-05-17 2003-11-21 Mitsubishi Electric Corp Semiconductor device
JP2005203401A (en) * 2004-01-13 2005-07-28 Sumitomo Bakelite Co Ltd Semiconductor device and manufacturing method thereof

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