JP2007048304A - Contact/non-contact type data carrier module - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a contact/non-contact type data carrier module which is excellent in versatility and can satisfactorily meet requirements on security. <P>SOLUTION: The data carrier module has a base member, a semiconductor chip mounted on the base member, a coil connected to the semiconductor chip and to perform communication in a non-contact manner by electromagnetic coupling with an external booster antenna and contact terminals connected to the semiconductor chip and subjected to contact connection to external contacts. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a data carrier module used by being incorporated in an IC card or the like, and in particular, exchanges information with an external read / write device (reader / writer) in both a contact type and a non-contact type. The present invention relates to a data carrier module for both contact type and non-contact type.

  While IC cards are gradually spreading from the viewpoint of information confidentiality, non-contact type IC cards that exchange information without contacting an external reader / writer have been proposed in recent years.

  In a non-contact type IC card, a system in which signal exchange with an external reader / writer, or both signal exchange and power supply is performed by electromagnetic waves is generally used.

Both non-contact type IC cards and reader / writers of this type have built-in antennas for transmitting and receiving electromagnetic waves to each other, and in non-contact type IC cards, operating power is generated by electromagnetic induction from the electromagnetic waves received from the reader / writer. In addition, signals are exchanged with reader / writers using electromagnetic waves.

  Such a non-contact type IC card has no contact with the reader / writer, so there is no contact failure, and it can be used at a location several centimeters to several tens of centimeters away from the reader / writer. Due to the characteristics such as being resistant to static electricity, the demand is expected to increase more and more in the future.

  On the other hand, various types of non-contact IC tags in the form of sheets or bills, in which an antenna coil is connected to an IC chip (semiconductor chip) in which data is stored, have been recently proposed for products and packaging boxes. As a result, it has been used to prevent shoplifting and improve logistics systems.

  Under such circumstances, recently, a test product of a so-called coil-on-chip type semiconductor chip module in which an antenna is provided on an IC chip itself as a data carrier for storing data has been provided. Research on contactless IC cards and IC tags using such test products is also underway.

  Such a non-contact type data carrier device such as a non-contact type IC card or IC tag is usually used for a booster antenna coil for exchanging signals with the outside, and this is used as a primary coil and electromagnetically coupled thereto. And a data carrier module such as a coil-on-chip semiconductor chip provided with the secondary coil. In the present specification, the term “data carrier module” is used as a general term for a module having a fine coil as a secondary coil and connected to a data carrier portion such as a semiconductor chip.

  In this case, the booster antenna coil as the primary coil and the secondary coil of the data carrier module are not directly connected but are relatively aligned and used. Specifically, for example, a coil dense portion is provided on the booster antenna coil (primary coil) side, and the data carrier module is mounted so that the secondary coil overlaps thereon. At this time, the efficiency of electromagnetic coupling is increased by substantially matching the shape of the coil dense portion of the booster antenna coil (primary coil) with the shape of the secondary coil of the data carrier module.

  By the way, in recent years, wireless cellular phone devices such as PHS (Personal Handyphone System) and mobile phones, portable computer terminals, and the like have spread rapidly, and many people carry them. Attempts have also been made to add various added values to mobile phone devices and the like.

  For example, in Japanese Patent Laid-Open No. 8-87655, an IC card in which information on a bank is recorded is inserted into a mobile phone device, and the owner of the IC card (owner of the mobile phone device) purchases goods or pays for services. An information processing system is disclosed in which, when receiving provision, an article providing device acquires record information of an IC card through a mobile phone device, and automatically performs electronic payment using the acquired record information. . An IC card used in such an information processing system is generally a contact IC card, and a contact reader / writer having electrical contacts is provided on the mobile phone device side.

  As described above, the non-contact type IC card as described above is widely used as the IC card, but security is required like an electronic payment card or an identification card in electric commerce. In some cases, a contact IC card having an electrical contact, which is superior in terms of security compared to a non-contact IC card, is generally put into practical use. Note that a contact-type IC card has a structure in which it is electrically connected directly to a reader / writer through a contact, so that the operation is generally stable.

  In addition, the non-contact type IC card as described above is used in units of cards by embedding a data carrier module (non-contact IC module) such as a coil-on-chip type semiconductor chip in a card-like medium. The non-contact type IC media on which such a data carrier module is mounted does not have to be limited to conventional usage forms. Moreover, it can be expected that the application is used not only in a specific field but also in various fields where information transmission is involved.

  The present invention has been made in view of the above points, and is a contact-type and non-contact-type data carrier module that is excellent in versatility and can sufficiently meet security requirements. The purpose is to provide.

  The present invention includes a base substrate, a semiconductor chip mounted on the base substrate, a coil connected to the semiconductor chip and performing non-contact communication by electromagnetic coupling with an external booster antenna unit, Provided is a contact-type and non-contact-type data carrier module characterized by comprising a contact terminal portion connected to the semiconductor chip and in contact connection with an external contact.

  1st aspect of this invention WHEREIN: The said semiconductor chip is arrange | positioned on one surface of the said base base material so that the terminal surface in which the terminal was provided faces outside, The said contact terminal part is the said semiconductor chip. The semiconductor chip and the contact terminal portion are disposed on the other surface opposite to the one surface disposed, and the contact terminal portion passes through the contact terminal portion opening formed in the base substrate. It is preferable that they are connected to each other by the connecting portion for part. Here, the contact terminal portion connection portion is preferably a bonding wire that connects the terminal of the semiconductor chip and the contact terminal portion. The contact terminal connecting portion includes a bonding wire that connects the terminal of the semiconductor chip and the connecting wiring portion, and a connecting wiring portion disposed on the one surface of the base substrate. Preferably, the base substrate includes a via portion formed in the contact terminal portion opening and connecting the connection wiring portion and the contact terminal portion.

  In the first aspect of the present invention, it is preferable that the coil is disposed on the terminal surface of the semiconductor chip, and the semiconductor chip and the coil are connected to each other by a coil connecting portion. . Here, the coil connection portion is preferably a bonding wire that connects a terminal of the semiconductor chip and an end portion of the coil.

  Furthermore, in the first aspect of the present invention, the coil is disposed on the one surface of the base substrate, and the semiconductor chip and the coil are connected to each other by a coil connecting portion. Is preferred. Here, the coil connection portion is preferably a bonding wire that connects a terminal of the semiconductor chip and an end portion of the coil. The coil is preferably disposed in the vicinity of the periphery of the semiconductor chip on the one surface of the base substrate.

  In the second aspect of the present invention, the semiconductor chip is disposed on one surface of the base substrate so that a terminal surface provided with a terminal faces the base substrate side, and the contact terminal portion includes: The semiconductor chip and the contact terminal portion are disposed on the other surface opposite to the one surface on which the semiconductor chip is disposed, and the contact terminal portion opening formed in the base substrate It is preferable that the contact terminals are connected to each other through. Here, the connection portion for the contact terminal portion is formed in the connection wiring portion disposed on the one surface of the base substrate, and the contact terminal portion opening of the base substrate, and the connection It is preferable that the wiring portion and the contact terminal portion are connected to each other, and the terminal of the semiconductor chip is flip-chip connected to the connecting wiring portion.

  In the second aspect of the present invention, it is preferable that the coil is disposed on the terminal surface of the semiconductor chip, and the semiconductor chip and the coil are connected to each other by a coil connecting portion. . Here, the coil is disposed via a wiring layer formed on the terminal surface of the semiconductor chip and an insulating layer formed to cover the wiring layer, and the wiring layer is formed on the semiconductor chip. Preferably, the coil connection portion is connected to a terminal and includes the wiring layer and a via portion that is formed in the insulating layer and connects the wiring layer and the end of the coil.

  Furthermore, in the second aspect of the present invention, the coil is disposed on the one surface of the base substrate, and the semiconductor chip and the coil are a pair of coils formed on the base substrate. It is preferable that the coils are connected to each other through the coil opening. Here, the coil connection portion includes a connection wiring portion disposed on the other surface of the base substrate and a connection terminal portion disposed on the one surface of the base substrate. And a pair of vias that are formed in the pair of coil openings of the base substrate and connect one end of the coil and the connection wiring portion, and the connection wiring portion and the connection terminal portion. The terminal of the semiconductor chip is preferably flip-chip connected to the connection terminal connected to one side terminal of the coil and the other side terminal of the coil.

  In addition, in this invention, it is preferable to further provide the resin layer for sealing which resin-seals the said semiconductor chip, the said coil, and the said wiring part.

  The data carrier module according to the present invention is preferably used as a SIM for a booster card or a SIM (Subscriber Identity Module) for a mobile phone device.

  Furthermore, the semiconductor chip of the data carrier module according to the present invention is used for downloading various types of information via the Internet using a personal authentication function circuit for performing an authentication process of the owner and a communication device that can be connected to the Internet. It is preferable to have a non-contact communication function circuit.

  According to the present invention, the coil can communicate with an external device or external medium provided with a booster antenna coil in a non-contact manner, and an external device or external medium having an electrical contact can be communicated with the contact terminal portion. Signals can be made in contact with the contacts. For this reason, the use is wide, it is excellent in versatility, and it can fully respond to security requirements.

  According to the present invention, it is possible to provide a data carrier module for both a contact type and a non-contact type that is excellent in versatility and can sufficiently meet the demand for security.

BEST MODE FOR CARRYING OUT THE INVENTION

  Embodiments of the present invention will be described below with reference to the drawings.

First Embodiment First, referring to FIG. 1, a first embodiment of a data carrier module for both contact type and non-contact type according to the present invention will be described.

  As shown in FIG. 1, in the data carrier module 101 according to the first embodiment of the present invention, a semiconductor chip 110 is mounted on one surface 120a of a base substrate 120. The semiconductor chip 110 is disposed on one surface 120a of the base substrate 120 so that the terminal surface 110a provided with the terminals 111a, 111b, 111c, and 111d faces outward. Here, the coil 115 is disposed on the terminal surface 110 a of the semiconductor chip 110. The semiconductor chip 110 and the coil 115 constitute a coil-on-chip type semiconductor chip module 106.

  Further, contact terminal portions 131 and 132 are disposed on the other surface 120b of the base substrate 120 opposite to the one surface 120a on which the semiconductor chip 110 is disposed.

  Here, the semiconductor chip 110 and the contact terminal portions 131 and 132 connect the terminals 111a and 111b of the semiconductor chip 110 and the contact terminal portions 131 and 132 with bonding wires (contact terminal portion connection portions) 145 and 146, respectively. Are connected to each other. Note that holes (contact terminal portion openings) 125 and 125 are formed in the base substrate 120, and the bonding wires 145 and 146 are connected to the holes 125 and 146 from the terminals 111 a and 111 b of the semiconductor chip 110, respectively. 125, extending so as to reach the surface of the contact terminal portions 131 and 132 on the base substrate 120 side.

  The semiconductor chip 110 and the coil 115 are connected to each other by connecting the terminals 111c and 111d of the semiconductor chip 110 and the ends 115a and 115b of the coil 115 with bonding wires (coil connection portions) 141 and 142, respectively. ing.

  Here, the semiconductor chip 110 exchanges data with an external reader / writer (not shown) via a coil 115 electrically connected to the semiconductor chip 110, and includes a control unit, a memory And a receiving circuit and a transmitting circuit.

  The coil 115 is a secondary coil for performing non-contact communication by electromagnetic coupling with an external device or a booster antenna coil (primary coil) of an external medium. Generally, the coil 115 is densely integrated and has a fine line width. Is used. The coil 115 is in an electromagnetically exposed state so as to exchange electromagnetic waves with a booster antenna coil as a primary coil, and constitutes a resonance circuit with the primary coil.

  The alignment of the booster antenna coil as the primary coil and the secondary coil will be described with reference to FIG. 6A. The booster antenna coil 621 of the booster card 620 as an external medium is provided with a coil dense portion (see reference numeral 650). Then, the data carrier module 610 is mounted so that the coil 611 (corresponding to the coil 115 in FIG. 1) overlaps the coil dense portion.

  The line width and density of the coil 115 are not necessarily matched with the line width and density of the booster antenna coil, but the efficiency of electromagnetic coupling is increased by matching the line width and density of both as much as possible. be able to.

  Here, as the coil-on-chip type semiconductor chip module 106 composed of the semiconductor chip 110 and the coil 115, various types manufactured, cut and separated at the wafer level have been proposed as will be described later. In addition, from the viewpoints of conductivity and cost, the coil 115 is not limited to a single copper layer, but a copper layer is used as a main layer and a nickel (Ni) layer, a gold (Au) layer, or the like is used. Can do.

  The base substrate 120 holds the semiconductor chip 110 and the contact terminal portions 131 and 132, and an electromagnetic wave transmitting insulating material generally used as a communication device material can be used. Examples of such an insulating material include an epoxy resin, a polyimide resin, and a fluororesin.

  The contact terminal portions 131 and 132 are electrically connected to the semiconductor chip 110 and function as contacts for contact connection with contacts of external devices and external media. In addition, it is preferable that the contact terminal portions 131 and 132 have basically the same form as that of a contact terminal portion generally used in an IC card or the like. In addition, as the contact terminal portions 131 and 132, those having a copper layer as a main layer and a nickel (Ni) layer or a gold (Au) layer provided on the surface thereof can be used.

  Next, an example of a method for manufacturing the data carrier module 101 having such a configuration will be described.

  First, the coil-on-chip type semiconductor chip module 106 including the semiconductor chip 110 and the coil 115 is manufactured.

  Specifically, after the semiconductor chip 110 is formed at the wafer level, a power feeding layer for electrolytic plating is formed on the entire surface of the semiconductor chip 110 on the terminal surface 110a side, and a photosensitive insulating layer is formed on the entire surface. . Next, the photosensitive insulating layer is exposed by photolithography to form a plating resistant resist layer having an opening corresponding to the shape of the coil 115 to be formed. Then, electrolytic plating is performed on the power supply layer exposed from the opening of the plating-resistant resist layer, the coil wiring layer (coil 115) is provided on the power supply layer, and then the plating-resistant resist layer is peeled and removed. Thereafter, the power feeding layer exposed by peeling and removing the plating-resistant resist layer is etched away by soft etching so as not to damage the coil wiring layer. As a result, a coil wiring layer (coil 115) is formed on the terminal surface 110 a of the semiconductor chip 110. Finally, the wafer is diced and separated for each semiconductor chip 110 to obtain the coil-on-chip type semiconductor chip module 106 in which the coil 115 is disposed on the terminal surface 110a.

  On the other hand, after forming the holes 125, 125 in the base substrate 120, the semiconductor chip module 106 is disposed on one surface 120a of the base substrate 120 via an adhesive layer (not shown) as necessary. Set up.

  Further, the contact terminal portions 131 and 132 are pressure-bonded or bonded to the other surface 120b of the base substrate 120 through an adhesive layer (not shown) as necessary.

  Thereafter, the terminals 111a and 111b of the semiconductor chip 110 and the contact terminal portions 131 and 132 are connected by the bonding wires 145 and 146 through the hole portions 125 and 125 by wire bonding, and the terminals 111c and 111d of the semiconductor chip 110 are connected. The ends 115 a and 115 b of the coil 115 are connected by bonding wires 141 and 142.

  As a result, the data carrier module 101 as shown in FIG. 1 is finally manufactured.

  In the first embodiment described above, the semiconductor chip module 106 side of the data carrier module 101 is resin-sealed to cover the semiconductor chip 110, the coil 115, and the bonding wires 141, 142, 145, and 146. A resin layer 190 may be provided.

Second Embodiment Next, referring to FIG. 2, a second embodiment of the data carrier module for both contact type and non-contact type according to the present invention will be described. The second embodiment of the present invention is substantially the same as the first embodiment shown in FIG. 1 except that the connection method between the terminal of the semiconductor chip and the contact terminal portion is different. In the second embodiment of the present invention, the same parts as those in the first embodiment shown in FIG.

  As shown in FIG. 2, in the data carrier module 102 according to the second embodiment of the present invention, connection wiring portions 151 and 152 are disposed on one surface 120 a of the base substrate 120. The semiconductor chip 110 is disposed on the connection wiring portion 152. Further, contact terminal portions 131 and 132 are disposed on the other surface 120 b of the base substrate 120.

  Here, holes (contact terminal portion openings) 126 and 126 are formed in the base substrate 120, and the connection wiring portions 151 and 152 and the contact terminal portion 131 are formed in the holes 126 and 126. , 132 are connected to via portions (via hole portions) 155, 156, respectively. Further, the terminals 111 a and 111 b of the semiconductor chip 110 and the connection wiring portions 151 and 152 are connected by bonding wires 145 and 146. As a result, the semiconductor chip 110 and the contact terminal portions 131 and 132 connect the semiconductor chip terminals 111a and 111b and the contact terminal portions 131 and 132 to the bonding wires 145 and 146, the connection wiring portions 151 and 152, and the via portions 155, respectively. By connecting by 156, they are connected to each other. The bonding wires 145, 146, the connection wiring portions 151, 152, and the via portions 155, 156 constitute a contact terminal portion connection portion.

  Next, an example of a method for manufacturing the data carrier module 102 having such a configuration will be described.

  First, the coil-on-chip type semiconductor chip module 106 in which the coil 115 is disposed on the terminal surface 110a of the semiconductor chip 110 is manufactured by the same method as in the first embodiment described above.

  On the other hand, a double-sided copper-clad laminate is prepared as the base substrate 120, the connection wiring portions 151 and 152 are provided on one surface 120a of the base substrate 120, and the contact terminal portions 131 and 132 are provided on the other surface 120b. Etching is performed by a photoetching method. Here, holes 126 and 126 are formed in the base substrate 120 before or after photoetching.

  Then, the via portions 155 and 156 are formed in the holes 126 and 126 of the base substrate 120 by electroless plating and electrolytic plating, and then the connection wiring portion 152 formed on the one surface 120a of the base substrate 120. A semiconductor chip 106 is disposed on the top. In this case, it is preferable to perform gold (Au) plating or the like on the surfaces of the contact terminal portions 131 and 132 as necessary before electroless plating or electrolytic plating.

  Thereafter, the terminals 111a and 111b of the semiconductor chip 110 and the connection wiring portions 151 and 152 are connected by bonding wires 145 and 146 by wire bonding, and the terminals 111c and 111d of the semiconductor chip 110 and the end portions 115a of the coil 115 are connected. 115b is connected by bonding wires 141 and 142.

  As a result, the data carrier module 102 as shown in FIG. 2 is finally manufactured.

  In addition to the method described above, the following method can be used as a method for manufacturing the data carrier module 102.

  That is, after forming the holes 126, 126 in the base substrate 120, a plating-resistant resist layer is formed on one surface 120a and the other surface 120b of the base substrate 120 by a photolithography method. After both surfaces 120a and 120b and the holes 126 and 126 are activated and electroless plating is performed, connection wiring portions 151 and 152, contact terminal portions 131 and 132, and via portions 155 and 156 are formed by electrolytic plating.

  Then, after soft etching the base substrate 120 thus obtained, the semiconductor chip 106 is disposed on the connection wiring portion 152 formed on one surface 120a of the base substrate 120. Also in this case, it is preferable to perform gold (Au) plating or the like on the surfaces of the contact terminal portions 131 and 132 as necessary before the soft etching.

  Thereafter, the terminals 111a and 111b of the semiconductor chip 110 and the connection wiring portions 151 and 152 are connected by bonding wires 145 and 146 by wire bonding, and the terminals 111c and 111d of the semiconductor chip 110 and the end portions 115a of the coil 115 are connected. 115b is connected by bonding wires 141 and 142.

  Thus, the data carrier module 102 as shown in FIG. 2 is finally manufactured in the same manner as described above.

  In the second embodiment described above, the semiconductor chip module 106 side of the data carrier module 102 is resin-sealed as in the first embodiment shown in FIG. A sealing resin layer may be provided so as to cover the bonding wires 141, 142, 145, 146 and the connection wiring portions 151, 152.

Third Embodiment Next, referring to FIG. 3, a third embodiment of the data carrier module for both contact type and non-contact type according to the present invention will be described. The third embodiment of the present invention is substantially the same as the first embodiment shown in FIG. 1 except that the arrangement positions of the coils are different. In the third embodiment of the present invention, the same parts as those in the first embodiment shown in FIG.

  As shown in FIG. 3, in the data carrier module 103 according to the third embodiment of the present invention, the coil 160 as the secondary coil is not on the terminal surface 110 a of the semiconductor chip 110 but on one side of the base substrate 120. Is disposed on the surface 120a. The semiconductor chip 110 and the coil 160 are connected to each other by connecting the terminals 111 c and 11 d of the semiconductor chip 110 and the ends 160 a and 160 b of the coil 160 by bonding wires (coil connection portions) 141 and 142. ing. As shown in FIG. 3, the coil 160 is disposed in the vicinity of the periphery of the semiconductor chip 110 on one surface 120 a of the base substrate 120.

  Next, an example of a method for manufacturing the data carrier module 103 having such a configuration will be described.

  First, a single-sided copper-clad laminate is prepared as the base substrate 120, and a coil 160 is formed by etching on one surface 120a by a photoetching method. Here, the holes 125 and 125 are formed in the base substrate 120 before or after photoetching.

  Next, the semiconductor chip 110 is disposed on one surface 120a of the base substrate 120 obtained in this way, with an adhesive layer (not shown) as necessary.

  Further, the contact terminal portions 131 and 132 are pressure-bonded or bonded to the other surface 120b of the base substrate 120 through an adhesive layer (not shown) as necessary.

  Thereafter, the terminals 111a and 111b of the semiconductor chip 110 and the contact terminal portions 131 and 132 are connected by the bonding wires 145 and 146 through the hole portions 125 and 125 by wire bonding, and the terminals 111c and 111d of the semiconductor chip 110 are connected. The ends 160 a and 160 b of the coil 160 are connected by bonding wires 141 and 142.

  As a result, the data carrier module 103 as shown in FIG. 3 is finally manufactured.

  In the third embodiment described above, as in the first embodiment shown in FIG. 1, the semiconductor chip 110 side of the data carrier module 103 is resin-sealed, and the semiconductor chip 110, coil 160, and bonding are bonded. A sealing resin layer may be provided so as to cover the wires 141, 142, 145, and 146.

Fourth Embodiment Next, referring to FIGS. 4 (a) and 4 (b), a fourth embodiment of the data carrier module for both contact and non-contact use according to the present invention will be described. 4A is a schematic sectional view showing a data carrier module according to the fourth embodiment of the present invention, and FIG. 4B is an enlarged schematic view showing the IVB portion of FIG. 4A. is there. The fourth embodiment of the present invention is different from the fourth embodiment except that the arrangement state of the semiconductor chip, the method of connecting the terminals of the semiconductor chip and the contact terminal portions, and the method of connecting the terminals of the semiconductor chip and the coils are different. This is substantially the same as the first embodiment shown in FIG. In the fourth embodiment of the present invention, the same parts as those in the first embodiment shown in FIG.

  As shown in FIGS. 4A and 4B, in the data carrier module 104 according to the fourth embodiment of the present invention, the semiconductor chip 110 has a terminal surface 110a provided with terminals 111a, 111b, 111c, and 111d. Is arranged on one surface 120a of the base substrate 120 so as to face the base substrate 120 side.

  As shown in FIG. 4B, wiring layers 171 and 172 connected to the terminals 111c and 111d of the semiconductor chip 110 are formed on the terminal surface 110a of the semiconductor chip 110, and the wiring layers 171 and 172 are formed on the wiring layers 171 and 172. The insulating layer 180 is formed so as to cover the wiring layers 171 and 172. Further, the coil 115 is disposed on the surface 180 a of the insulating layer 180. The semiconductor chip 110 and the coil 115 constitute a coil-on-chip type semiconductor chip module 107.

  Here, via portions 157a and 157b are formed in the insulating layer 180, so that the wiring layers 171 and 172 and the end portions 115a and 115b of the coil 115 can be connected to each other. Thus, the semiconductor chip 110 and the coil 115 are connected to each other by the wiring layers 171 and 172 and the via portions 157a and 157b. The wiring layers 171 and 172 and the via portions 157a and 157b constitute a coil connection portion.

  In addition, via portions 158a and 158b are formed in the insulating layer 180, and the terminals 111a and 111b of the semiconductor chip 110 are connected to the convex terminals 112a and 112b disposed on the surface 180a of the insulating layer 180, respectively. Be able to.

  On the other hand, as shown in FIG. 4A, connection wiring portions 151 and 152 are disposed on one surface 120a of the base substrate 120, and contact terminal portions 131 and 132 are disposed on the other surface 120b. It is arranged.

  Here, holes (contact terminal portion openings) 126 and 126 are formed in the base substrate 120, and the connection wiring portions 151 and 152 and the contact terminal portion 131 are formed in the holes 126 and 126. , 132 are connected to via portions (via hole portions) 155, 156, respectively. The convex terminals 112 a and 112 b connected to the terminals 111 a and 111 b of the semiconductor chip 110 are flip-chip connected to the connection wiring portions 151 and 152. Thus, the semiconductor chip 110 and the contact terminal portions 131 and 132 are connected to each other by the via portions 158a and 158b, the convex terminals 112a and 112b, the connection wiring portions 151 and 152, and the via portions 155 and 156. The via terminal portions 158a and 158b, the convex terminals 112a and 112b, the connecting wiring portions 151 and 152, and the via portions 155 and 156 constitute a contact terminal portion connecting portion.

  Next, an example of a method for manufacturing the data carrier module 104 having such a configuration will be described.

  First, the coil-on-chip type semiconductor chip module 107 including the semiconductor chip 110 and the coil 115 is manufactured.

  Specifically, after the semiconductor chip 110 is formed at the wafer level, a power feeding layer for electrolytic plating is formed on the entire surface of the semiconductor chip 110 on the terminal surface 110a side, and a photosensitive insulating layer is formed on the entire surface. . Next, the photosensitive insulating layer is exposed by photolithography to form a plating-resistant resist layer having openings corresponding to the shapes of the wiring layers 171 and 172 to be formed. Then, electrolytic plating is performed on the power feeding layer exposed from the opening of the plating resistant resist layer, and the wiring layers 171 and 172 are provided on the power feeding layer, and then the plating resistant resist layer is peeled off. Thereafter, the power feeding layer exposed by peeling and removing the plating-resistant resist layer is etched away by soft etching so as not to damage the wiring layers 171 and 172. Thereby, wiring layers 171 and 172 are formed on the terminal surface 110 a of the semiconductor chip 110.

  Next, photosensitive polyimide is applied to the entire surface of the semiconductor chip 110 on the terminal surface 110a side so as to cover the wiring layers 171 and 172, and openings for forming the via portions 157 and 158 are formed by photolithography. The entire surface of the photosensitive polyimide film is activated and electroless plating is performed to form a power feeding layer.

  Next, a photosensitive insulating layer is formed on the entire surface of the power feeding layer, and the photosensitive insulating layer is exposed by a photolithography method, thereby forming the formed coil 115, via portions 157a and 157b, via portions 158a and 158b, and convex terminals. A plating-resistant resist layer having openings corresponding to the shapes of 112a and 112b is formed. Then, electrolytic plating is performed on the power feeding layer exposed from the opening of the plating resistant resist layer, and the wiring layers 171 and 172 are provided on the power feeding layer, and then the plating resistant resist layer is peeled off. Thereafter, the power feeding layer exposed by peeling off the plating-resistant resist layer is etched away by soft etching so as not to damage the coil 115, the via portions 157a and 157b, the via portions 158a and 158b, and the convex terminals 112a and 112b. Thereby, wiring layers 171 and 172 are formed on the terminal surface 110 a of the semiconductor chip 110.

  Finally, the wafer is diced and separated for each semiconductor chip 110 to obtain the coil-on-chip type semiconductor chip module 107 in which the coil 115 is disposed on the surface 180a of the insulating layer 180.

  On the other hand, a double-sided copper-clad laminate is prepared as the base substrate 120, the connection wiring portions 151 and 152 are provided on one surface 120a of the base substrate 120, and the contact terminal portions 131 and 132 are provided on the other surface 120b. Etching is performed by a photoetching method. Here, holes 126 and 126 are formed in the base substrate 120 before or after photoetching.

  Then, via portions 155 and 156 are formed in the holes 126 and 126 of the base substrate 120 by electroless plating and electrolytic plating, and then the convex terminals 112a and 112b connected to the terminals 111a and 111b of the semiconductor chip 110 are formed. Then, flip chip connection is made to the connection wiring portions 151 and 152. If necessary, bumps may be formed at positions corresponding to the convex terminals 112a and 112b in the connection wiring portions 151 and 152.

  As a result, the data carrier module 104 as shown in FIGS. 4A and 4B is finally manufactured.

  In addition to the method described above, the following method can be used as a method for manufacturing the data carrier module 104.

  That is, after forming the holes 126, 126 in the base substrate 120, a plating-resistant resist layer is formed on one surface 120a and the other surface 120b of the base substrate 120 by a photolithography method. After both surfaces 120a and 120b and the holes 126 and 126 are activated and electroless plating is performed, connection wiring portions 151 and 152, contact terminal portions 131 and 132, and via portions 155 and 156 are formed by electrolytic plating.

  After the base substrate 120 thus obtained is soft-etched, the convex terminals 112a and 112b connected to the terminals 111a and 111b of the semiconductor chip 110 are flip-chip connected to the connection wiring portions 151 and 152. To do. If necessary, bumps may be formed at positions corresponding to the convex terminals 112a and 112b in the connection wiring portions 151 and 152.

  As a result, the data carrier module 104 as shown in FIGS. 4A and 4B is finally manufactured in the same manner as described above.

  In the fourth embodiment described above, as in the first embodiment shown in FIG. 1, the semiconductor chip module 107 side of the data carrier module 104 is sealed with resin, and the semiconductor chip 110, the coil 115, and A sealing resin layer may be provided so as to cover the connection wiring portions 151 and 152.

Fifth Embodiment Next, referring to FIG. 5, a fifth embodiment of the data carrier module for both contact type and non-contact type according to the present invention will be described. The fifth embodiment of the present invention is the same as the fourth embodiment shown in FIGS. 4 (a) and 4 (b) except that the arrangement position of the coil and the connection method between the terminal of the semiconductor chip and the coil are different. This is substantially the same as the embodiment. In the fifth embodiment of the present invention, the same parts as those of the fourth embodiment shown in FIGS. 4 (a) and 4 (b) are denoted by the same reference numerals, and detailed description thereof is omitted.

  As shown in FIG. 5, in the data carrier module 105 according to the fifth embodiment of the present invention, the coil 160 as the secondary coil is not on the terminal surface 110a of the semiconductor chip 110 but on one side of the base substrate 120. Is disposed on the surface 120a.

  On one surface 120a of the base substrate 120, connection terminal portions (rounds) 165, 166, and 167 connected to the terminals 111a, 111b, and 111c are disposed. Further, contact terminal portions 131 and 132 and a connection wiring portion 159 are disposed on the other surface 120 b of the base substrate 120.

  Here, holes (coil openings) 127 and 127 are formed in the base substrate 120, and one side end 160 a of the coil 160 and the connection wiring portion 159 are formed in the holes 127 and 127. And a pair of via portions 157a and 157b for connecting the connection wiring portion 159 and the connection terminal portion 167 are provided. The convex terminals 112c and 112d connected to the terminals 111c and 111d of the semiconductor chip 110 are the connection terminal part 167 finally connected to the one end 160a of the coil 160 and the other part of the coil 160, respectively. It is flip-chip connected to the side end 160b.

As a result, the semiconductor chip 110 and the coil 160 have the terminal 111c of the semiconductor chip 110 and the end 160a of the coil 160 connected to the terminals 111c and 111d of the semiconductor chip 110, and the connection terminal portion 167. In addition, the via part 157b, the connecting wiring part 159 and the via part 157a are connected to each other, and the terminal 111d of the semiconductor chip 110 and the end part 160b of the coil 160 are connected to each other by the convex terminal 112d. The convex terminals 112c and 112d, the connection terminal part 167, the via parts 157a and 157b, and the connection wiring part 159 constitute a coil connection part.

  In addition, holes (openings for contact terminal portions) 126, 126 are formed in the base substrate 120. In the holes 126, 126, connection terminal portions 165, 166 and contact terminal portions 131, 126 are formed. Via portions 155 and 156 are provided for connecting to the H.132. The convex terminals 112a and 112b connected to the terminals 111a and 111b of the semiconductor chip 110 are flip-chip connected to the connection terminal portions 165 and 166, respectively. Thereby, the semiconductor chip 110 and the contact terminal portions 131 and 132 are connected by connecting the terminals 111a and 111b of the semiconductor chip and the contact terminal portions 131 and 132 by the connection terminal portions 165 and 166 and the via portions 155 and 156, respectively. Are connected to each other. The connection terminal portions 165 and 166 and the via portions 155 and 156 constitute a contact terminal portion connection portion.

  Next, a method for manufacturing the data carrier module 105 having such a configuration will be described.

  First, a double-sided copper-clad laminate is prepared as the base substrate 120, the coil 160 and connection terminal portions 165, 166, and 167 are provided on one surface 120a of the base substrate 120, and the contact terminal portion is provided on the other surface 120b. 131 and 132 and connection wiring part 159 are formed by etching using a photoetching method. Here, holes 126, 126, 127, 127 are formed in the base substrate 120 before or after photoetching.

  Then, via portions 155, 156, 157a, 157b are formed in the holes 126, 126, 127, 127 of the base substrate 120 by electroless plating and electrolytic plating, and terminals 111a, 111b, 111c, 111d of the semiconductor chip 110 are formed. The convex terminals 112a, 112b, 112c, and 112d connected to are connected to the connection terminal portions 165, 166, and 167 and the other terminal 160b of the coil 160 by flip-chip connection.

  Thereby, the data carrier module 105 as shown in FIG. 5 is finally manufactured.

  In addition to the method described above, the following method can be used as a method for manufacturing the data carrier module 105.

  That is, after forming the holes 126, 126, 127, 127 in the base substrate 120, a plating-resistant resist layer is formed on one surface 120a and the other surface 120b of the base substrate 120 by photolithography, and the base After activating the both surfaces 120a, 120b and the holes 126, 126, 127, 127 of the base material 120 and performing electroless plating, the coil 160, the connection terminal portions 165, 166, 167, and the contact terminal portions are obtained by electrolytic plating. 131, 132, connection wiring part 159 and via parts 155, 156, 157a, 157b are formed.

  Then, after soft etching the base substrate 120 obtained in this way, the protruding terminals 112a, 112b, 112c, and 112d connected to the terminals 111a, 111b, 111c, and 111d of the semiconductor chip 110 are connected to the connection terminals. The parts 165, 166, and 167 and the other terminal 160b of the coil 160 are flip-chip connected.

  Thereby, the data carrier module 105 as shown in FIG. 5 is finally manufactured.

  In the fifth embodiment described above, as in the first embodiment shown in FIG. 1, the semiconductor chip 110 side of the data carrier module 105 is resin-sealed, and the semiconductor chip 110, the coil 160, and the connection are connected. A sealing resin layer may be provided to cover the terminal portions 165, 166, and 167 for use.

Usage Mode Next, with reference to FIGS. 6A, 6B, and 6C, usage modes of the contact-type and non-contact-type data carrier modules according to the first to fifth embodiments described above will be described.

  As shown in FIG. 6 (a), the data carrier module 610 (corresponding to the data carrier modules 101 to 105 shown in FIGS. 1 to 5) is a booster card SIM (Subscriber Identity Module) or a mobile phone device. It can be used as a SIM.

  As shown in FIG. 6A, when the data carrier module 610 is used as a SIM for the booster card 620, it is inserted into the slot 650 of the booster card 620 and used.

  In this case, the booster antenna coil (primary coil) 621 of the booster card 620 is provided with a coil dense portion at the position of the slot 650, and the data carrier so that the coil (secondary coil) 611 overlaps the coil dense portion. A module 610 is mounted. At this time, the efficiency of electromagnetic coupling can be increased by substantially matching the shape of the coil dense portion of the booster antenna coil 621 and the shape of the coil 611 of the data carrier module 610.

  In this way, when the data carrier module 610 is inserted into the slot 650 of the booster card 620, a contact-type and non-contact-type data carrier is supplied from an external read / write device (reader / writer) via the booster antenna coil 621. The semiconductor chip of the module 610 can be accessed without contact.

  Here, the semiconductor chip of the data carrier module 610 includes a control unit, a memory, a reception circuit, and a transmission circuit, and an input signal from the coil 611 is accessed to the memory via the reception circuit and the control unit, The signal is sent to the transmission circuit via the control unit, and sent to the external reader / writer via the coil 611 and the booster antenna coil 621 of the booster card 620. The semiconductor chip memory stores various information necessary for the data carrier device.

  Here, a frequency band of 125 kHz (medium wave), 13.56 MHz, 2.45 GHz (microwave), or the like is used for communication between the booster card 620 and an external reader / writer. The communication distance is about 20 cm at 13.56 MHz, but the actual communication distance varies greatly depending on the antenna area and the output power of the reader / writer.

  The booster card 620 is provided with a plurality of slots so that a plurality of data carrier modules 610 are inserted, and communication is performed between the data carrier module 610 and an external reader / writer for each slot. Also good.

  On the other hand, as shown in FIG. 6B, when the data carrier module 610 is used as a SIM for the mobile phone device 630, it is inserted into the slot 650 of the mobile phone device 630 and used.

  In this case, a booster antenna coil (primary coil, not shown) of the cellular phone device 630 is provided with a coil dense portion at the position of the slot 650, and a coil (secondary coil) 611 overlaps with the coil dense portion. Thus, the data carrier module 610 is mounted. At this time, the efficiency of electromagnetic coupling can be increased by making the shape of the coil dense portion of the booster antenna coil substantially coincide with the shape of the coil 611 of the data carrier module 610. Note that in the cellular phone device 630, the booster antenna coil is preferably formed on the back side of the cellular phone device 630.

  Thus, when the data carrier module 610 is inserted into the slot 650 of the mobile phone device 630, the data carrier module 610 for both contact and non-contact use is connected to the mobile phone device 630 via the booster antenna coil. As shown in FIG. 6 (b), Internet communication is performed through the mobile phone device 630, and information is exchanged with the personal computer 641 as shown in FIG. 6 (c). You can give and receive. 6B and 6C, reference numeral 631 denotes a display portion of the cellular phone device 630, reference numeral 632 denotes a communication antenna, reference numeral 634 denotes an electromagnetic wave emitted from the communication antenna 632, and reference numeral 641 denotes a personal computer 640. It is a display unit.

  The semiconductor chip of the contact-type and non-contact-type data carrier module according to the first to fifth embodiments described above can be connected to the personal authentication function circuit for performing owner authentication processing and the Internet. It is preferable to provide a non-contact communication function circuit for downloading various information via the Internet using a simple communication device.

  In this case, as shown in FIGS. 6B and 6C, a contact-type and non-contact-type data carrier module 610 is inserted into a slot of a communication device such as a mobile phone device 630 that can be connected to the Internet. Thus, the owner can selectively download various kinds of information via the Internet and can be charged for the price.

  In such a contact-type and non-contact-type data carrier module 610, after writing information to the data carrier module 610 via the Internet, (1) using the data carrier module 610 as a non-contact IC module, Communicate in a contactless manner with a reader / writer, or (2) communicate in a contactless manner with an external reader / writer using the antenna booster coil of the cellular phone device 630 in which the data carrier module 610 is inserted. Or (3) exchange signals with another memory device such as a personal computer 640 via the mobile phone device 630 in which the data carrier module 610 is inserted.

1 is a schematic cross-sectional view showing a first embodiment of a data carrier module for both contact and non-contact use according to the present invention. The schematic sectional drawing which shows 2nd Embodiment of the data carrier module for both contact type and non-contact type by this invention. The schematic sectional drawing which shows 3rd Embodiment of the data carrier module for both contact type and non-contact type by this invention. The figure which shows 4th Embodiment of the data carrier module for both contact type and non-contact type by this invention. FIG. 5 is a schematic cross-sectional view showing a fifth embodiment of the contact-type and non-contact-type data carrier module according to the present invention; It is the schematic for demonstrating the usage condition of the data carrier module for both contact type and non-contact type by this invention.

Explanation of symbols

101-105 Data carrier modules 106, 107 Coil-on-chip type semiconductor chip module 110 Semiconductor chip 110a Terminal surfaces 111a, 111b, 111c, 111d Terminals 112a, 112b Convex terminal 115 Coil (secondary coil)
115a, 115b end portion 120 base material 125, 125 hole (opening for contact terminal portion)
126, 126 hole (opening for contact terminal)
127, 127 hole (coil opening)
131,132 Contact terminal part 141,142 Bonding wire (coil connection part)
145,146 Bonding wire (contact terminal connection)
151,152 Connection wiring part 155,156 Via part (via hole part)
157a, 157b Via part 158a, 158b Via part 159 Connection wiring part 160 Coil (secondary coil)
160a, 160b Ends 165, 166, 167 Terminals for connection (round)
171, 172 Wiring layer 180 Insulating layer 190 Resin layer for sealing 610 Data carrier module 611 Coil (secondary coil)
620 Booster card 621 Booster antenna coil (primary coil)
630 Mobile phone device 631 Display unit 632 Communication antenna 634 Electromagnetic wave 640 Personal computer 641 Display unit 650 Slot

Claims (19)

A base substrate;
A semiconductor chip mounted on the base substrate;
A coil connected to the semiconductor chip for performing contactless communication by electromagnetic coupling with an external booster antenna unit;
A contact-type and non-contact-type data carrier module comprising a contact terminal portion connected to the semiconductor chip for contact connection with an external contact.   The semiconductor chip is disposed on one surface of the base substrate so that a terminal surface provided with terminals faces outward, and the contact terminal portion includes the one surface on which the semiconductor chip is disposed. The semiconductor chip and the contact terminal portion are disposed on the other surface on the opposite side, and are connected to each other by the contact terminal portion connection portion through the contact terminal portion opening formed in the base substrate. The data carrier module according to claim 1, wherein:   3. The data carrier module according to claim 2, wherein the contact terminal portion connection portion is a bonding wire that connects a terminal of the semiconductor chip and the contact terminal portion.   The contact terminal portion connecting portion includes a bonding wire for connecting the terminal of the semiconductor chip and the connecting wiring portion, a connecting wiring portion disposed on the one surface of the base substrate, 3. The data carrier module according to claim 2, comprising a via portion that is formed in the contact terminal portion opening of the base substrate and connects the connection wiring portion and the contact terminal portion.   3. The data carrier module according to claim 2, wherein the coil is disposed on the terminal surface of the semiconductor chip, and the semiconductor chip and the coil are connected to each other by a coil connecting portion. .   The data carrier module according to claim 5, wherein the coil connection portion is a bonding wire that connects a terminal of the semiconductor chip and an end portion of the coil.   3. The data according to claim 2, wherein the coil is disposed on the one surface of the base substrate, and the semiconductor chip and the coil are connected to each other by a coil connecting portion. Carrier module.   The data carrier module according to claim 7, wherein the coil connection portion is a bonding wire that connects a terminal of the semiconductor chip and an end portion of the coil.   The data carrier module according to claim 7, wherein the coil is disposed in the vicinity of the periphery of the semiconductor chip on the one surface of the base substrate.   The semiconductor chip is disposed on one surface of the base substrate so that a terminal surface provided with terminals faces the base substrate side, and the contact terminal portion is disposed on the semiconductor chip. The semiconductor chip and the contact terminal portion are disposed on the other surface opposite to the one surface, and the contact terminal portion connection portion is formed through the contact terminal portion opening formed in the base substrate. The data carrier module according to claim 1, wherein the data carrier modules are connected to each other.   The contact terminal portion connecting portion is formed in the connection wiring portion disposed on the one surface of the base substrate, and the contact terminal portion opening portion of the base substrate, and the connection wiring portion. 11. The data carrier module according to claim 10, further comprising a via portion connecting the contact terminal portion and the contact terminal portion, wherein the terminal of the semiconductor chip is flip-chip connected to the connection wiring portion.   11. The data carrier module according to claim 10, wherein the coil is disposed on the terminal surface of the semiconductor chip, and the semiconductor chip and the coil are connected to each other by a coil connecting portion. .   The coil is disposed via a wiring layer formed on the terminal surface of the semiconductor chip and an insulating layer formed to cover the wiring layer, and the wiring layer is connected to a terminal of the semiconductor chip. 13. The data according to claim 12, wherein the coil connection portion includes the wiring layer and a via portion that is formed in the insulating layer and connects the wiring layer and an end portion of the coil. Carrier module.   The coil is disposed on the one surface of the base substrate, and the semiconductor chip and the coil are connected to each other by a coil connection portion through a pair of coil openings formed in the base substrate. 11. Data carrier module according to claim 10, characterized in that it is connected.   The coil connection portion includes a connection wiring portion disposed on the other surface of the base substrate, a connection terminal portion disposed on the one surface of the base substrate, Formed in the pair of coil openings of the base substrate, from one end of the coil and the connection wiring portion, and from the pair of via portions connecting the connection wiring portion and the connection terminal portion The terminal of the semiconductor chip is flip-chip connected to the terminal part for connection connected to one side terminal of the coil and the other side terminal of the coil. Data carrier module.   16. The data carrier module according to claim 1, further comprising a sealing resin layer for resin-sealing the semiconductor chip, the coil, and the wiring portion.   The data carrier module according to any one of claims 1 to 16, wherein the data carrier module is used as a SIM for a booster card.   The data carrier module according to claim 1, wherein the data carrier module is used as a SIM for a mobile phone device.   The semiconductor chip has a personal authentication function circuit for performing an owner authentication process, and a non-contact communication function circuit for downloading various types of information via the Internet using a communication device connectable to the Internet. The data carrier module according to claim 1, characterized in that:

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