JP2007035441A - Manufacturing method of electro-optical device and electro-optical device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an electro-optical device and an electro-optical device with improvement made in aspects of environment and cost with processes simplified, by applying an image formation technology of carrying out toner development like electronic photograph. <P>SOLUTION: In forming an organic film on a substrate for the electro-optical device by applying the image formation technology of carrying out toner development like electronic photograph, an electrostatic latent image written on an image carrier is put under a development process ST4 of visualizing it with a development material capable of forming the organic film, a transfer process ST5 of transferring the development material from the image carrier to the substrate for the electro-optical device, and a fixing process ST3 of fixing the development material on the substrate for the electro-optical device. At that time, after a transfer process ST, with the use of the image carrier capable of storing the electrostatic latent image written, the electrostatic latent image stored in the image carrier is again visualized at the development process ST4, and then, the transfer process ST5 is carried out on another substrate for the electro-optical device. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an electro-optical device manufacturing method and an electro-optical device. More specifically, the present invention relates to a technique for manufacturing an electro-optical device using an image forming technique based on electrophotographic toner development.

  An organic electroluminescence (EL / Electroluminescence) device or a liquid crystal device is used as a display device used in an electronic device such as a mobile phone, a personal computer, or a PDA (Personal Digital Assistant). In addition, light emitting devices such as organic EL devices have attracted attention as exposure heads in image forming apparatuses such as digital copying machines and printers.

  In order to manufacture this type of electro-optical device, conventionally, a plurality of types of films are formed by repeatedly performing a film forming process and a patterning process using a photolithography technique on a substrate. In some cases, a predetermined region on the substrate is surrounded by a partition wall, and a liquid material is filled inside the partition wall by an ink jet method to form a light-emitting layer of an organic EL element. Is formed by selectively leaving the photosensitive resin layer in a predetermined region. (For example, refer to Patent Document 1).

  Such a manufacturing process requires waste liquid treatment of the organic solvent used in the photolithography process, which is not preferable in terms of environment and cost.

On the other hand, as an image forming technique based on electrophotographic toner development, a technique capable of storing an electrostatic latent image obtained by writing for a long period of time has been proposed (for example, see Patent Document 2). ).
JP 2003-249375 A Japanese Patent Laid-Open No. 5-221139

  Here, the inventor of the present application does not need conventional organic solvent waste liquid treatment by applying an image forming technique that has not been attracting attention in the field of electro-optical devices to the electro-optical device manufacturing process. And propose to improve the environment and cost.

  That is, an object of the present invention is to provide an electro-optical device manufacturing method capable of improving the environmental and cost aspects and simplifying the process by applying an electrophotographic toner developing image forming technique. And providing an electro-optical device.

  In order to solve the above problems, in the present invention, an electrostatic latent image is stored in an image carrier, and a developer pattern corresponding to the stored electrostatic latent image is applied to a plurality of electro-optical device substrates. Transfer and fix. That is, according to the present invention, in a method of manufacturing an electro-optical device in which one or more organic films are formed on a substrate for an electro-optical device, a writing process for storing an electrostatic latent image on an image carrier, and a developer, A first developing step of forming a first developer pattern corresponding to the formation pattern of the electrostatic latent image on the image carrier, and the first developer pattern from the image carrier to a first electricity A first transfer step for transferring to the optical device substrate; a fixing step for fixing the first developer pattern on the first electro-optical device substrate; and the development after the first transfer step. A second developing step of forming on the image carrier a second developer pattern corresponding to the formation pattern of the electrostatic latent image stored in the image carrier by the material; and the second development. The material pattern is transferred from the image carrier to the second electric light. Characterized in that it comprises a second transfer step of transferring to the device substrate.

  In the present invention, an organic film is selectively formed on a substrate for an electro-optical device by applying an image forming technique in which toner development is performed electrophotographically. Therefore, it is necessary to perform a photolithography process when forming the organic film. Absent. Therefore, in order to form such an organic film, the waste liquid treatment of the organic solvent conventionally used in the photolithography process becomes unnecessary. Therefore, environmental and cost improvements can be achieved. In the present invention, since the electrostatic latent image stored in the image carrier is repeatedly used, it is not necessary to write an electrostatic image again after the transfer process. Therefore, a large number of substrates for the electro-optical device can be processed continuously, and the process can be simplified.

  In the present invention, after the first transfer step, it is preferable to further perform the first development step for the image carrier and the first transfer step for the first electro-optical device substrate. . With this configuration, an organic film having an arbitrary film thickness can be formed on the electro-optical device substrate. In this case as well, the electrostatic latent image stored in the image carrier is repeatedly used. Thereafter, there is no need to write an electrostatic image again.

  In the present invention, in the image carrier, for example, a ferroelectric layer containing a ferroelectric is formed on a conductive support, and the electrostatic latent image is changed depending on the arrangement direction of the dipoles of the ferroelectric. The image is defined. In this case, before the first development step and the second development step, a latent image developing step of heating the ferroelectric layer and then cooling it to develop the electrostatic latent image may be performed. preferable.

  In the present invention, it is preferable that in the latent image developing step, the ferroelectric layer is heated and then cooled after performing a charge removal process from the image carrier.

  In the present invention, for example, before performing the writing step, an alignment step of arranging the ferroelectric dipoles in one direction is performed, and in the writing step, a ferroelectric region in a predetermined region of the ferroelectric is formed. Invert the body dipole.

  In the present invention, the ferroelectric layer is, for example, an organic ferroelectric layer or an inorganic ferroelectric dispersed polymer layer in which an inorganic ferroelectric is dispersed in a polymer.

  In the present invention, when a plurality of types of organic films are formed on one electro-optical device substrate, for example, the first developing step and the first transfer step are performed on one electro-optical device substrate. And after the fixing step, the first developing step, the first transfer step, and the electro-optical device substrate using another image carrier and a different type of developer. The fixing step may be performed.

  In the present invention, when a plurality of types of organic films are formed on one electro-optical device substrate, the first developing step and the first transfer step are performed on one electro-optical device substrate. Thereafter, the first development step and the first transfer step are performed on the electro-optical device substrate using another image carrier and a different type of developer. It is preferable that the plurality of first developer patterns transferred to the optical device substrate are fixed simultaneously.

  In the present invention, the electro-optical device substrate is, for example, an organic EL device substrate or a liquid crystal device substrate. Here, in the organic EL device substrate, there is a case where a predetermined region on the substrate is surrounded by a partition, and the inside thereof is filled with a liquid material by an ink jet method to form a light emitting layer of the organic EL element. Such a partition may be formed as an organic film to which the present invention is applied. In the substrate for liquid crystal devices, the color filter, black matrix, unevenness forming layer for imparting light scattering property to the reflective layer, planarization film, liquid crystal layer thickness adjustment layer, etc. are composed of organic films in a predetermined area on the substrate. Therefore, at least one of such organic films may be formed as an organic film to which the present invention is applied. Such an electro-optical device is used as a display device in electronic devices such as a mobile phone, a personal computer, and a PDA. The organic EL device to which the present invention is applied is used as an exposure head in an image forming apparatus such as a digital copying machine or a printer.

  Embodiments of the present invention will be described below with reference to the drawings.

[Embodiment 1]
1A and 1B are explanatory diagrams of an image carrier used in the method for manufacturing an electro-optical device according to the invention. FIG. 2 is a process diagram showing a method for manufacturing an electro-optical device according to the present invention.

  In the method for manufacturing an electro-optical device according to the present invention, an image is formed by electrophotographic toner development using the flat or roll image carrier 1 shown in FIGS. An organic film is formed on the electro-optical device substrate.

  Here, in the image carrier 1, a ferroelectric layer 3 containing a ferroelectric is formed on a conductive support 2 such as aluminum with a thickness of 300 nm to 300 μm. The written electrostatic latent image can be stored.

  In such an image carrier 1, the ferroelectric layer 3 is an organic ferroelectric layer or an inorganic ferroelectric dispersed polymer layer in which an inorganic ferroelectric is dispersed in a polymer. Examples of the material constituting the organic ferroelectric layer include a polymer mainly composed of vinylidene fluoride and ethylene fluoride, and a copolymer of vinylidene fluoride and ethylene fluoride.

On the other hand, examples of the inorganic ferroelectric dispersed polymer layer include those obtained by dispersing the following ferroelectrics disclosed in JP-A-5-221139 in a polymer. That is, on the conductive support 2, the following general formula (1)
(Bi ₂ O ₂ ) ²⁺ (XY ₂ O ₇ ) ²⁻ ·· Formula (1)
However, X: Sr, Pb, Na _0.5 Bi _0.5 , Y: Ta, Nb
Or the following general formula (2)
X _n Bi ₄ Ti _{n + 3} O _{3n + 12} .. Formula (2)
However, X; Sr, Ba, Pb, Na _0.5 Bi _0.5 , n; 1, 2
A ferroelectric layer 3 containing an inorganic oxide ferroelectric represented by the following formula is formed. Here, oxide ferroelectrics include Sr—Bi—Ti—O, Sr—Bi—Nb—O, Sr—Bi—Ta—O, Ba—Bi—Ti—O, and Pb—Bi. -Nb-O system, Pb-Bi-Ta-O system, Pb-Bi-Ti-O system, Na-Bi-Nb-O system, Na-Bi-Ta-O system, Na-Bi-Ti-O system Can be used.

  Such an image carrier 1 is formed by, for example, a method in which the ferroelectric layer 3 is formed on the conductive support 2 or a method in which the ferroelectric layer 3 and the conductive support 2 are separately manufactured and then bonded together. Etc. As the former method, a ferroelectric material, a resin and a solvent are mixed and dissolved, and this mixed solution is applied to the conductive support 2 by dipping, bar coating, roll coating, spray coating, spin coating, or the like. Then, the solvent is removed to form the ferroelectric layer 3. Further, as the latter method, there is a method in which a film-like ferroelectric layer 3 manufactured by a similar method is bonded to the conductive support 2 using a conductive adhesive. Examples of the resin material used for forming the ferroelectric layer 3 include polyvinyl butyral, polyester, polycarbonate, epoxy resin, and polymethyl methacrylate.

  In order to form an organic film on the electro-optical device substrate using the image carrier 1 configured as described above, as shown in FIG. 2, first, in the alignment step ST1, one ferroelectric dipole is formed. Arrange in the direction. For this purpose, for example, a negative corona pulse having a predetermined voltage is repeatedly applied to substantially the entire surface of the image carrier 1 with a predetermined pulse width. Instead of corona charging, a charging method using roller electrodes may be employed.

  Next, in the writing step ST2, writing is performed on the image carrier 1 with a predetermined pattern, and the dipole of the ferroelectric material in a predetermined region of the dielectric is inverted. For this purpose, for example, by applying a positive corona pulse having a predetermined voltage with a predetermined pulse width to the ferroelectric layer 3 through a predetermined mask, the polarization of only the ferroelectric in a predetermined region is inverted. As a result, in the image carrier 1, an electrostatic latent image is defined by the arrangement direction of the ferroelectric dipoles. Note that ion flow may be used for inversion of polarization.

  Next, in the latent image developing step ST3, the ferroelectric layer 3 is heated to, for example, about 150 ° C. by a heater or light irradiation, and then cooled to develop an electrostatic latent image. Here, since the orientation of the ferroelectric dipole is canceled when the ferroelectric-paraelectric phase transition point is exceeded, the heating temperature needs to be lower than the ferroelectric-paraelectric phase transition point. In addition, when the ferroelectric layer 3 is heated, the spontaneous polarization of the ferroelectric decreases, the bound surface charge becomes free charge, and the electric resistance of the ferroelectric layer 3 decreases, so that this free charge leaks. To do. In addition, by cooling from the heated state, the spontaneous polarization reversibly returns to the original magnitude, but since the leaked surface charge is irreversible, a potential due to the spontaneous polarization is generated. Therefore, in the latent image developing step ST, it is preferable that the ferroelectric layer 3 is heated and then cooled after performing a charge removal process from the image carrier 1 using an ionizer or the like.

  Next, in the development step ST4, the electrostatic latent image written on the image carrier 1 is visualized with a liquid, powder, or microcapsule developer capable of forming an organic film. At that time, if a positive powder developer is used, the developer adheres only to the portion where the polarization is reversed, and the electrostatic latent image is visualized as a developer pattern.

  Next, in the transfer step ST5, the developer pattern is transferred from the image carrier 1 to the electro-optical device substrate.

  Next, in the fixing step ST6, the electro-optical device substrate is heated to about 200 ° C. to fix the developer on the electro-optical device substrate, thereby forming an organic film.

  In manufacturing the electro-optical device using such a process, in this embodiment, after performing the alignment process ST1 and the writing process ST2 on the image carrier 1, the developer supports the electrostatic latent image formation pattern. A first developing step for forming the first developer pattern on the image carrier 1, and a first transfer for transferring the first developer pattern from the image carrier 1 to the first electro-optical device substrate. After the step and the first transfer step, a second developer pattern corresponding to the formation pattern of the electrostatic latent image stored in the image carrier 1 is formed on the image carrier 1 by the developer. And a second transfer step of transferring the second developer pattern from the image carrier 1 to the second electro-optical device substrate.

  That is, after the organic film is formed on the first electro-optical device substrate, the alignment process ST1 and the writing process ST2 for the image carrier 1 are not performed, and the process returns to the latent image developing process ST3 to perform another electro-optical process. An organic film is formed on the device substrate. In other words, the alignment step ST1 and the writing step ST2 are not performed on the first electro-optical device substrate and the second electro-optical device substrate, and the first electro-optical device substrate is not performed. After the latent image developing step ST4 (first latent image developing step), the developing step ST4 (first developing step), and the transfer step ST5 (first transferring step), the second electro-optical device substrate is formed. On the other hand, a latent image developing step ST4 (second latent image developing step), a developing step ST4 (second developing step), and a transferring step ST5 (second transferring step) are performed.

  When processing a plurality of electro-optical device substrates, the first electro-optical device substrate (first electro-optical device substrate) is subjected to the fixing step ST6 and then another electro-optical device. For the device substrate (second electro-optical device substrate), a latent image developing step ST4 (second latent image developing step), a developing step ST4 (second developing step), and a transferring step ST5 (second transferring) Step) and fixing step ST6 may be performed, but after performing up to transfer step ST5 on each of the plurality of electro-optical device substrates, fixing is performed on the plurality of electro-optical device substrates at once. Step ST6 may be performed.

(Effect of this embodiment)
As described above, in this embodiment, an organic film is selectively formed on the substrate for the electro-optical device by applying the image forming technology for developing the toner in an electrophotographic manner. Therefore, when the organic film is formed, a photolithography process is performed. There is no need to do it. Therefore, in order to form such an organic film, the waste liquid treatment of the organic solvent conventionally used in the photolithography process becomes unnecessary. Therefore, environmental and cost improvements can be achieved.

  In this embodiment, since the image carrier 1 capable of storing the written electrostatic latent image is used, it is not necessary to write the electrostatic image again after the transfer step ST5. Therefore, after the transfer step ST5, the electrostatic latent image stored in the image carrier 1 is visualized again in the latent image development step ST3 and the development step ST4, and then transferred to another electro-optical device substrate. ST5 can be performed. Therefore, a large number of substrates for the electro-optical device can be processed continuously, and the process can be simplified.

[Embodiment 2]
In the method according to the first embodiment, if the organic film formed in one transfer step 5 is thin, writing to the image carrier 1 is performed after forming the first organic film. Instead, the process returns to the latent image developing step ST3, the second organic film is formed on the same electro-optical device substrate, and the organic films are formed in multiple layers. That is, after the transfer process ST5 (first transfer process), the electrostatic latent image stored in the image carrier 1 is again converted into the latent image developing process ST3 (first latent image developing process) and the developing process ST4 ( After visualization in the first development step), the transfer step ST5 (first transfer step) is performed on the same electro-optical device substrate.

  At that time, the first organic film may be formed after the fixing step ST6, and then the second organic film may be formed. However, after the first organic film transfer step ST5 is performed, the second layer is formed. The organic film of the eye is formed, and then the fixing step ST6 may be performed to fix the first and second organic films at the same time.

[Embodiment 3]
The first and second embodiments are examples in which one type of organic film is formed on one electro-optical device substrate. However, when a plurality of types of organic films are formed, different image carriers are used. The process described with reference to FIG. 2 may be performed using a type of developer. That is, after the latent image developing step ST3, the developing step ST4, the transfer step ST5, and the fixing step ST6 are performed on one electro-optical device substrate, another image carrier is applied to the electro-optical device substrate. The latent image development step ST3, the development step ST4, the transfer step ST5, and the fixing step ST6 may be performed again using different types of developers.

  Also in this case, after processing a plurality of electro-optical device substrates, the first electro-optical device substrate (first electro-optical device substrate) is subjected to the fixing step ST6, and then another process is performed. For the electro-optical device substrate (second electro-optical device substrate), the latent image developing step ST4 (second latent image developing step), the developing step ST4 (second developing step), and the transfer step ST5 (second) The transfer step ST6 and the fixing step ST6 may be performed, but after performing the transfer step ST5 on each of the plurality of electro-optical device substrates, the plurality of electro-optical device substrates are collectively performed. Then, the fixing step ST6 may be performed.

[Embodiment 4]
The second embodiment is a method of forming another organic film after forming one type of organic film when forming a plurality of types of organic films on one electro-optical device substrate. In the fixing step shown in FIG. 4, a plurality of developers may be fixed together. That is, after performing the development process and the transfer process on one electro-optical device substrate, the development process and the transfer process are performed on the electro-optical device substrate using another image carrier and developer, In the fixing step, a plurality of developers transferred to the electro-optical device substrate may be fixed simultaneously.

  Also in this case, after performing the transfer process ST5 on the first electro-optical device substrate, the electrostatic latent image stored in the image carrier 1 is visualized again in the latent image developing process ST3 and the developing process ST4. Thereafter, the transfer process ST5 and the fixing process ST6 may be performed on another electro-optical device substrate.

[Specific application example to electro-optical device]
Hereinafter, an example in which the manufacturing method according to the present invention is applied to a manufacturing method of an organic EL device and a liquid crystal device will be described. In the drawings used for the following description, the scales are different for each layer and each member in order to make each layer and each member large enough to be recognized on the drawing.

(Overall configuration of organic EL device)
FIG. 3 is a block diagram showing an electrical configuration of the organic EL device. 4A and 4B are a plan view and a cross-sectional view of one pixel of the organic EL device.

  In FIG. 3, an organic EL device 10 (electro-optical device) is a light-emitting device that drives and controls an organic EL element 14 that emits light when a drive current flows through an organic functional film with thin film transistors 6 and 7, and this type of light-emitting device. Is used as a display device, since the organic EL element 14 emits light by itself, there is an advantage that a backlight is not required and the viewing angle dependency is small. In the organic EL device 10 shown here, a plurality of scanning lines 63, a plurality of data lines 64 extending in a direction intersecting with the extending direction of the scanning lines 63, and the data lines 64 are arranged in parallel. A plurality of common power supply lines 65 and pixels 15 corresponding to the intersections of the data lines 64 and the scanning lines 63 are configured, and the pixels 15 are arranged in a matrix in the image display area. A data line driving circuit 51 including a shift register, a level shifter, a video line, and an analog switch is configured for the data line 64. A scanning line driving circuit 54 including a shift register and a level shifter is configured for the scanning line 63. Each pixel 15 holds a pixel switching thin film transistor 6 to which a scanning signal is supplied to the gate electrode via the scanning line 63 and an image signal supplied from the data line 64 via the thin film transistor 6. The storage capacitor 33, the current control thin film transistor 7 to which the image signal held by the storage capacitor 33 is supplied to the gate electrode, and the common power supply line when electrically connected to the common power supply line 65 via the thin film transistor 7 The organic EL element 14 into which a drive current flows from 65 is comprised. When color display is performed by the organic EL device 10, each pixel 15 corresponds to red (R), green (G), and blue (B).

  More specifically, as shown in FIGS. 4A and 4B, such an organic EL device 10 has a base protection made of a silicon oxide film on a substrate 20 made of a glass substrate or the like constituting an element substrate. A film (not shown) is formed, and a semiconductor film 9a for forming the thin film transistor 7 and the like is formed in an island shape on the base protective film. Source / drain regions 9b and 9c are formed in the semiconductor film 9a by introducing impurities, and a portion where no impurities are introduced becomes a channel region 9d. A gate insulating film 21 is formed on an upper layer side of the base protective film and the semiconductor film 9a, and a scanning line 63 and a gate electrode 43 made of Al, Mo, Ta, Ti, W, or the like are formed on the gate insulating film 21. Yes. A first interlayer insulating film 22 and a second interlayer insulating film 23 are stacked in this order on the upper side of the scanning line 63, the gate electrode 43 and the gate insulating film 21.

  A source / drain electrode 26 connected to the source / drain regions 9b and 9c via the contact holes 221 and 222 of the first interlayer insulating film 22 and the gate insulating film 21 and a common supply are formed on the first interlayer insulating film 22, respectively. An electric wire 65 is formed. A data line 64 is also formed in the upper layer of the first interlayer insulating film 22.

  A light-transmissive pixel electrode 11 (anode) made of an ITO layer is formed on the second interlayer insulating film 23, and the pixel electrode 11 is connected to the source / drain via the contact hole 221 of the second interlayer insulating film 23. The electrode 26 is electrically connected. Accordingly, when the pixel electrode 11 is electrically connected to the common power supply line 65 via the thin film transistor 7, a drive current flows from the common power supply line 65.

  Each pixel 15 is formed with an organic EL element 14 in which a pixel electrode 11 as an anode, an organic functional layer 13, and a counter electrode 12 as a cathode are laminated in this order. The organic functional layer 13 includes, for example, a hole injection layer 13a stacked on the pixel electrode 11 and a light emitting layer 13b formed on the hole injection layer 13a. An electron injection layer or an electron transport layer may be formed between the light emitting layer 13b and the counter electrode 12, and a hole transport layer or the like is formed between the light emitting layer 13b and the hole injection layer 13a. There is also a case. The hole injection layer 13a has a function of injecting holes into the light emitting layer 13b. In the light emitting layer 13b, holes injected from the hole injection layer 13a and the counter electrode 12 are injected. The electrons recombine and light emission is obtained. Here, the large number of pixels 15 correspond to each color of red (R), green (G), and blue (B), and the correspondence of such colors is defined by the type of material constituting the functional layer 13. Has been. In addition, the organic EL element 14 is configured to emit white light, while red (R), green (G), and blue (B) color filters may be formed for each pixel 15. is there.

  The organic EL device 10 of this embodiment is a bottom emission type that emits display light toward the substrate side, and the counter electrode 12 is made of a thin calcium layer, an aluminum film, or the like and has light reflectivity. When the organic EL device 10 is a top emission type that emits display light toward the side opposite to the substrate, the counter electrode 12 includes a thin calcium layer and a light-transmitting cathode layer made of an ITO layer or the like. A light reflection layer made of an aluminum film or the like is formed on the lower layer side of the pixel electrode 11 so as to overlap substantially the entire pixel electrode 11.

  In this embodiment, in the boundary region between the adjacent pixels 15, the partition walls 5 made of an organic film are formed as a bank so as to surround the periphery of the pixel electrode 11. The partition wall 5 defines an application region of a liquid material to be applied when a liquid phase process such as an ink jet method (liquid ejection method) or a spin coat method is used when forming the organic functional layer 13. The liquid is formed with a uniform thickness by the tension. As an ink jet type droplet discharge device, a piezoelectric jet droplet discharge device that discharges a fluid by changing the volume of a piezoelectric element, a droplet discharge device that uses an electrothermal transducer as an energy generating element, and the like are adopted. The

  A sealing resin (not shown) is formed on the element forming surface side of the substrate 20 to prevent the cathode layer or the functional layer from being oxidized by preventing intrusion of water or oxygen. (Not shown) may be affixed.

(Method for manufacturing organic EL device)
5A to 5K are process cross-sectional views illustrating a method for manufacturing an organic EL device to which the present invention is applied.

  In order to manufacture the organic EL device 10 of this embodiment, first, as shown in FIG. 5A, a substrate 20 is prepared. Here, when the organic EL device 10 is a bottom emission type, a transparent or translucent material such as glass, quartz, or resin is used as the substrate 20, but glass is particularly preferably used. Further, a color filter film, a color conversion film containing a fluorescent material, or a dielectric reflection film may be disposed on the substrate 20 to control the emission color. On the other hand, when the organic EL device 10 is a top emission type, the substrate 20 may be opaque. In this case, a ceramic sheet such as alumina or a metal sheet such as stainless steel is subjected to an insulation treatment such as surface oxidation. A thing, a thermosetting resin, a thermoplastic resin, etc. can be used.

  Next, a base protective film (not shown) made of a silicon oxide film having a thickness of about 200 to 500 nm is formed on the substrate 20 by a plasma CVD method using TEOS (tetraethoxysilane) or oxygen gas as a raw material if necessary. Form.

Next, the temperature of the substrate 20 is set to about 350 ° C., and a semiconductor film 9 made of an amorphous silicon film having a thickness of about 30 to 70 nm is formed on the surface of the base protective film by plasma CVD. Next, a crystallization process such as laser annealing or solid phase growth is performed on the semiconductor film 9 to crystallize the semiconductor film 9 into a polysilicon film. In the laser annealing method, for example, a line beam having a long beam length of 400 mm is used with an excimer laser, and the output intensity is set to 200 mJ / cm ² , for example. With respect to the line beam, the line beam is scanned so that a portion corresponding to 90% of the peak value of the laser intensity in the short dimension direction overlaps each region.

  Next, as shown in FIG. 5B, the semiconductor film (polysilicon film) 9 is patterned to form an island-shaped semiconductor film 9a, and a plasma CVD method using TEOS, oxygen gas, or the like as a raw material on the surface thereof. Thus, a gate insulating film 21 made of a silicon oxide film or nitride film having a thickness of about 60 to 150 nm is formed. The semiconductor film 9a serves as a channel region and a source / drain region of the thin film transistor 7 shown in FIG. 3, but semiconductor films serving as a channel region and a source / drain region of the thin film transistor 6 are also formed at different cross-sectional positions. ing. That is, in the organic EL device 10, two types of thin film transistors 6 and 7 are formed in the same layer or in different layers, but are formed in substantially the same procedure. Therefore, in the following description, only the thin film transistor 7 will be described. The description of the thin film transistor 6 is omitted.

  Next, as shown in FIG. 5C, a conductive film made of a metal film such as aluminum, tantalum, molybdenum, titanium, or tungsten is formed by sputtering, and then patterned to form a gate electrode 43 or the like. . Next, impurities such as phosphorus are implanted in this state, and source / drain regions 9b and 9c are formed in the semiconductor film 9a in a self-aligned manner with respect to the gate electrode 43. Note that a portion where no impurity is introduced becomes the channel region 9d.

  Next, as shown in FIG. 5D, after the first interlayer insulating film 22 is formed, contact holes 221 and 222 are formed, and source / drain regions 9b and 9c are formed through these contact holes 221 and 222. The source / drain electrode 26 and the common power supply line 65 that are electrically connected to each other are formed. At this time, the data line 64 and the like are also formed.

Next, as shown in FIG. 5 (E), so as to cover the upper surface of each wiring, after forming the second interlayer insulating film 23 made of an inorganic insulating film such as SiO _2, TiO _2, the second interlayer insulating film 23, contact holes 231 are formed at positions corresponding to the source / drain electrodes 26.

  Next, as shown in FIG. 5E, after forming an ITO film on the second interlayer insulating film 23, the ITO film is patterned and surrounded by the data lines 64, the scanning lines 63, and the common power supply lines 65. The pixel electrode 11 is formed at the predetermined position.

Next, plasma processing using oxygen as a processing gas (O ₂ plasma processing) is performed in an air atmosphere, so that a portion of the pixel electrode 11 and the second interlayer insulating film 23 exposed from the pixel electrode 11 is positively exposed. A lyophilic property is imparted to the liquid material for forming the hole injection layer 13a and the light emitting layer 13b. Here, since the second interlayer insulating film 23 is made of an inorganic insulating film such as SiO ₂ or TiO ₂ , plasma treatment is performed depending on the composition of the liquid material for forming the hole injection layer 13a and the light emitting layer 13b. Even if not, it may be lyophilic, and in this case, the plasma treatment can be omitted.

  Next, in the partition formation step shown in FIG. 5F, the partition 5 is formed so as to surround the formation site of the hole injection layer 13a and the light emitting layer 13b. As a result, a recess 51 is formed inside the partition wall 5. The partition wall 5 functions as a partition member, and the partition wall 5 is formed to have a thickness of, for example, 1 to 2 μm.

  In forming this partition wall 5, in this embodiment, a developer capable of forming the partition wall 5 is used in the organic film forming method described in the first, second, third, and fourth embodiments.

Next, the partition wall 5 is subjected to fluorination treatment to impart liquid repellency to the liquid material for forming the hole injection layer 13a and the light emitting layer 13b. In order to impart such liquid repellency, for example, a method of surface-treating the surface of the partition wall 5 with a fluorine compound or the like is employed. Examples of the fluorine compound, for example CF _4, SF _6, CHF ₃ include, as the surface treatment, for example plasma treatment, and the like UV irradiation treatment.

  Next, in the first droplet discharge step shown in FIG. 5G, the liquid hole injection layer forming material 40a (liquid material) is discharged with the upper surface of the substrate 20 facing upward. From the droplet discharge head of the apparatus, the recess 51 surrounded by the partition wall 5 is selectively filled. At that time, the hole injection layer forming material 40a tends to spread in the horizontal direction because of its high fluidity. However, since the partition walls 5 are formed surrounding the applied position, the hole injection layer forming material 40a It does not extend beyond the partition wall 5. Here, as the hole injection layer forming material 40a, for example, 3,4-polyethylenediosithiophene / polystyrene sulfonic acid (PEDOT / PSS), which is a polyolefin derivative, is used as the hole injection material, and this is mainly composed of an organic solvent. A dispersion liquid dispersed as a solvent is preferably used. However, the hole injecting material is not limited to those described above, but polyphenylene vinylene whose polymer precursor is polytetrahydrothiophenylphenylene, 1,1-bis- (4-N, N-ditolylaminophenyl) ) Cyclohexane, tris (8-hydroxyquinolinol) aluminum, and the like can also be used.

  In this way, after the hole injection layer forming material 40a is discharged from the droplet discharge head and disposed at a predetermined position, the liquid hole injection layer forming material 40a is subjected to a drying process, and the hole injection layer forming material is thus obtained. The dispersion medium in 40a is evaporated, and the hole injection layer forming material 40a is solidified. As a result, a hole injection layer 13a is formed on the pixel electrode 11 as shown in FIG.

  Next, in the second droplet discharge step shown in FIG. 5I, the light emitting layer is formed as a liquid from the droplet discharge head of the droplet discharge device described above with the upper surface of the substrate 20 facing upward. The material 40 b (liquid material) is selectively filled into the recess 51 surrounded by the partition walls 5. As the light emitting material, for example, a polymer material having a molecular weight of 1000 or more is used. Specifically, a polyfluorene derivative, a polyphenylene derivative, a polyvinyl carbazole, a polythiophene derivative, or a polymer material thereof, a perylene dye, a coumarin dye, a rhodamine dye such as rubrene, perylene, 9,10-diphenylanthracene, What doped tetraphenyl butadiene, Nile red, coumarin 6, quinacridone, etc. is used. As such a polymer material, a π-conjugated polymer material in which π electrons of a double bond are non-polarized on a polymer chain is also a conductive polymer, and thus has excellent light emitting performance. Preferably used. In particular, a compound having a fluorene skeleton in the molecule, that is, a polyfluorene compound is more preferably used. In addition to such materials, for example, a composition for an organic EL device disclosed in JP-A-11-40358, that is, a precursor of a conjugated polymer organic compound, and at least one kind for changing light emission characteristics A composition for an organic EL device comprising the above fluorescent dye can also be used as a light emitting layer forming material. As an organic solvent that dissolves or disperses such a light emitting material, a nonpolar solvent is suitable. In particular, since the light emitting layer is formed on the hole injection layer 13a, Insoluble materials are used. Specifically, xylene, cyclohexylbenzene, dihydrobenzofuran, trimethylbenzene, tetramethylbenzene and the like are preferably used. The formation of the light emitting layer by discharging the light emitting layer forming material 40b includes the light emitting layer forming material that emits red colored light, the light emitting layer forming material that emits green colored light, and the light emitting that emits blue colored light. The layer forming material is discharged and applied to the corresponding pixels. Further, the pixels corresponding to the respective colors are determined in advance so that they are regularly arranged.

  After discharging the light emitting layer forming material 40b of each color in this manner, the liquid light emitting layer forming material 40b is dried to evaporate the dispersion medium in the light emitting layer forming material 40b. Solidify. As a result, as shown in FIG. 5J, a solid light emitting layer 13b is formed on the hole injection layer 13a. Thereby, the functional layer 13 including the hole injection layer 13a and the light emitting layer 13b is formed.

  In addition, about the drying process of the light emitting layer forming material 40b, it is preferable to dry by heating at the temperature below the glass transition point of the light emitting layer forming material 40b, for example, the temperature of less than 100 degrees. By drying at such a temperature, the evaporation rate of the solvent in the light emitting layer forming material 40b can be kept relatively low, and the flow due to liquefaction of the light emitting layer forming material 40b can also be suppressed. The resulting light emitting layer 13b can also be sufficiently planarized. Further, the thermal damage caused by the drying process in forming the light emitting layer is reduced not only for the light emitting layer light emitting layer 13b but also for the hole injection layer 13a, and the display performance is prevented from being deteriorated due to a decrease in initial luminance. The Here, in the case of forming a hole transport layer, an electron injection layer, and an electron transport layer in addition to the hole injection layer 13a and the light-emitting layer 13b, they can be formed by the same method, and thus description thereof is omitted. To do.

  Next, as shown in FIG. 5 (K), LiF / Al (a laminated film of LiF and Al), MgAg, or LiF / Ca / Al (LiF and Ca) are formed on the entire surface of the substrate 20 or in a stripe pattern. A counter electrode 12 is formed by depositing a film of Al and Al) by vapor deposition or the like. Then, after sealing, the organic EL device 10 provided with the organic EL element 14 in each pixel 15 is manufactured by further forming various elements such as wiring.

(Other Embodiments of Organic EL Device)
In the manufacturing method of the organic EL device 10, the organic film forming method described in the first, second, third, and fourth embodiments is applied when the partition wall 5 is formed. You may apply this invention to manufacture of a color filter. Further, the present invention may be applied to the formation of the hole injection layer 13a and the light emitting layer 13b.

  Since the organic EL device 10 is a bottom emission type, light is emitted from the substrate 20 through the pixel electrode 11. In such a case, the emitted light is blocked by the source / drain electrode 26, the thin film transistor 7, etc., and the amount of emitted light decreases. When such a decrease in the amount of emitted light becomes a problem, a part of the pixel electrode 11 is extended to a region overlapping the partition wall 5 in a plane, and a contact hole 221 is formed in the region overlapping the partition wall 5 in a plane. Also good.

  In the above embodiment, the liquid phase process for forming the functional layer 13 is a configuration in which droplets are discharged and filled into the recesses 51 formed by the partition walls 5 by an inkjet method. The present invention may be applied to the case where the liquid material is filled in the recess 51 formed by the partition wall 5 by application.

(Application to liquid crystal devices)
FIG. 6 is a block diagram showing an electrical configuration of the liquid crystal device (electro-optical device). 7 and 8 are a plan view and a cross-sectional view illustrating a pixel configuration of a transflective liquid crystal device, respectively. 8 corresponds to a cross-sectional view of a part of the pixel of the liquid crystal device taken along line CC ′ in FIG.

  In the liquid crystal device 100 (electro-optical device) illustrated in FIG. 6, a pixel electrode 115 and a pixel switching TFT 130 for controlling the pixel electrode 115 are formed in each of a plurality of pixels formed in a matrix. In addition, a data line 106 a for supplying a pixel signal is electrically connected to the source of the TFT 130. Pixel signals S1, S2,... Sn written to the data line 106a are supplied line-sequentially in this order. Further, the scanning line 103a is electrically connected to the gate of the TFT 130, and the scanning signals G1, G2,... Gm are applied to the scanning line 103a in a pulse-sequential manner in this order at a predetermined timing. It is configured. The pixel electrode 115 is electrically connected to the drain of the TFT 130. By turning on the TFT 130 for a certain period, the pixel signals S1, S2,... Sn supplied from the data line 106a are supplied to each pixel. Write at a predetermined timing. In this way, the pixel signals S1, S2,... Sn at a predetermined level written in the liquid crystal through the pixel electrode 115 are held for a certain period with a counter electrode formed on a counter substrate described later. Here, in order to prevent the held image signal from leaking, a storage capacitor 160 may be added in parallel with the liquid crystal capacitor formed between the pixel electrode 115 and the counter electrode. As a method for forming the storage capacitor 160, the storage capacitor 160 may be formed between the storage line 160 and the scanning line 103a in the previous stage, in addition to the structure formed between the storage line 160 and the capacitor line 103b.

  7 and 8, the transflective liquid crystal device 100 is used in a state where the element substrate 105 (TFT array substrate) and the counter substrate 20 (see FIG. 8) are arranged to face each other. A pixel electrode 115 made of a plurality of transparent ITO (Indium Tin Oxide) films is formed in a matrix on the element substrate 105, and a pixel switching TFT 130 is connected to each pixel electrode 115. . A data line 106a, a scanning line 103a, and a capacitor line 103b are formed along the vertical and horizontal boundaries of the pixel electrode 115, and the TFT 130 is connected to the data line 106a and the scanning line 103a. That is, the data line 106 a is electrically connected to the source region of the TFT 130 through the contact hole, and the protruding portion of the scanning line 103 a constitutes the gate electrode of the TFT 130. The storage capacitor 160 has a structure in which the extended portion of the semiconductor film 101a for forming the pixel switching TFT 130 is made into a lower electrode, and the capacitor line 103b overlaps the lower electrode as the upper electrode. ing.

  A cross section taken along the line C-C 'of the pixel region configured as described above is expressed as shown in FIG. 8, and the base protection made of a silicon oxide film (insulating film) is formed on the surface of the transparent substrate as the base of the element substrate 105. A film 111 is formed, and an island-shaped semiconductor film 101 a is formed on the surface of the base protective film 111. A gate insulating film 102 made of a silicon oxide film is formed on the surface of the semiconductor film 101a, and a scanning line 103a is formed on the surface of the gate insulating film 102. In the semiconductor film 101a, a region facing the scanning line 103a through the gate insulating film 102 is a channel region. A source region including a low concentration source region and a high concentration source region is formed on one side of the channel region, and a drain region including a low concentration drain region and a high concentration drain region is formed on the other side. .

  An interlayer insulating film 104 made of a silicon oxide film and / or a silicon nitride film is formed on the surface side of the pixel switching TFT 130. A data line 106 a is formed on the surface of the interlayer insulating film 104, and the data line 106 a is electrically connected to the high concentration source region through a contact hole formed in the interlayer insulating film 104. A drain electrode 106b formed simultaneously with the data line 106a is formed on the surface of the interlayer insulating film 104. The drain electrode 106b is electrically connected to the high concentration drain region through a contact hole formed in the interlayer insulating film 104. Connected.

  A concavo-convex forming layer 113 is formed on the interlayer insulating film 104 with a resin, and a light reflecting layer 150 made of an aluminum film or the like is formed on the surface of the concavo-convex forming layer 113. Therefore, the unevenness of the unevenness forming layer 113 is reflected on the surface of the light reflecting layer 150.

  A pixel electrode 115 made of an ITO film is formed on the light reflecting layer 150. The pixel electrode 115 is directly laminated on the surface of the light reflecting layer 150, and the pixel electrode 115 and the light reflecting layer 150 are electrically connected. Further, the pixel electrode 115 is electrically connected to the drain electrode 106 b through a contact hole formed in the unevenness forming layer 113 and the interlayer insulating film 104. An alignment film 112 made of a polyimide film is formed on the surface side of the pixel electrode 115. The alignment film 112 is a film obtained by performing a rubbing process on a polyimide film.

  The capacitor line 103b is opposed to the extended portion (lower electrode) from the high concentration drain region as an upper electrode through an insulating film (dielectric film) formed simultaneously with the gate insulating film 102. A storage capacitor 160 is configured.

  Furthermore, in this embodiment, a plurality of columnar protrusions 140 each having a height of 2 μm to 3 μm made of transparent polyimide resin or the like are formed on the upper layer side of the capacitor line 103b for each pixel. A distance between the substrate 105 and the counter substrate 205 is defined.

  In the counter substrate 205, a light shielding film 123 called a black matrix or black stripe is formed in a region facing the vertical and horizontal boundary regions of the pixel electrode 115 formed on the element substrate 105, and an ITO layer is formed on the upper layer side. A counter electrode 121 made of a film is formed. An alignment film 122 made of a polyimide film is formed on the upper layer side of the counter electrode 121. The alignment film 122 is a film obtained by performing a rubbing process on the polyimide film. In the counter substrate 205, R, G, and B color filters 124 are formed on the lower layer side of the counter electrode 121 to a thickness of 1 μm to several μm. In addition, an insulating film 129 as a planarizing film or an overcoat film is formed on the lower layer side of the counter electrode 121 as necessary. Here, in the counter substrate 205, the substrate interval in the reflection region where the light reflection layer 150 is formed between the counter electrode 121 and the color filter 124 is made larger than the substrate interval in the transmission region corresponding to the opening 151. A layer thickness adjusting layer 125 to be thinned is formed. Such a layer thickness adjusting layer 125 is made of a resin having a thickness of 2 μm to 3 μm. With this configuration, the transmissive display light passes through the liquid crystal layer 170 once and is emitted, whereas the reflected display light passes through the liquid crystal layer 170 twice. The retardation can be optimized for both the reflected display light and the reflected display light. Note that the layer thickness adjustment layer 125 may not be formed in the transmission region corresponding to the opening 151.

  In the liquid crystal device configured as described above, since the light reflection layer 150 is formed on the element substrate 105, external light incident from the counter substrate 205 side passes through the liquid crystal layer 170 as indicated by an arrow LR. The light reaches the reflective layer 150, is reflected by the light reflective layer 150, passes through the liquid crystal layer 170 again, and is emitted as reflected display light from the counter substrate 205 side to display an image. In addition, since the light reflecting layer 150 has an opening 151 that allows light emitted from a backlight device (not shown) to pass therethrough and display an image in the transmission mode, the light reflecting layer 150 has an opening 151. Of the emitted light, light incident on the opening 151 is incident on the liquid crystal layer 170 from the element substrate 105 side as indicated by an arrow LT, and after being light-modulated by the liquid crystal layer 170, the light is incident on the counter substrate 205 side. Is emitted as transmissive display light to display an image (transmission mode).

  In the liquid crystal device 100 having such a configuration, the unevenness forming layer 113 is formed as an organic film on the element substrate 105, and the color filter 124, the light shielding layer 123, the insulating film 129, and the layer thickness adjusting layer 125 are formed on the counter substrate 205. Is formed as an organic film. Therefore, when the liquid crystal device 100 is manufactured, the organic film forming method described in the first, second, third, and fourth embodiments may be applied when forming at least one of these organic films.

(Another embodiment of the liquid crystal device)
The above embodiment is an example in which the present invention is applied to an active matrix liquid crystal device using TFT as a nonlinear element. However, an active matrix liquid crystal device using TFD as a nonlinear element or a passive matrix type without using a nonlinear element. The present invention may be applied to a liquid crystal device.

[Another embodiment of the electro-optical device]
The technical scope of the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention, and the specific materials and configurations described in the embodiment are included. These are merely examples, and can be changed as appropriate. Therefore, the present invention can be applied to various electro-optical devices such as an organic EL device and a liquid crystal device as well as a device using a plasma display device and an electron-emitting device (Field Emission Display and Surface-Conduction Electron-Emitter Display). Good.

[Application example to electronic equipment]
The electro-optical device to which the present invention is applied can be used as a display device in various electronic devices such as a mobile phone, a personal computer, and a PDA. The light emitting device to which the present invention is applied can also be used as an exposure head in an image forming apparatus such as a digital copying machine or a printer.

(A) and (B) are explanatory views of an image carrier used in the method for manufacturing an electro-optical device according to the present invention. FIG. 6 is a process diagram illustrating a method for manufacturing an electro-optical device according to the invention. It is a block diagram which shows the electric constitution of an organic EL apparatus. (A), (B) is the top view and sectional drawing for 1 pixel of an organic electroluminescent apparatus. (A)-(K) are process sectional drawings which show the manufacturing method of the organic electroluminescent apparatus to which this invention is applied. It is a block diagram which shows the electrical constitution of a liquid crystal device (electro-optical device). It is a top view which shows the pixel structure of a transflective liquid crystal device. FIG. 8 is a cross-sectional view when a part of a pixel of the liquid crystal device is cut along a line CC ′ in FIG. 7.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Image carrier, 2 Conductive support body, 3 Ferroelectric layer, 5 Partition (organic film), 10 Organic EL apparatus (electro-optical apparatus), 20 Substrate (electro-optical apparatus substrate), 100 Liquid crystal apparatus (Electro-optical) Device), 105 element substrate (substrate for electro-optical device), 113 unevenness forming layer (organic film), 123 light shielding layer (organic film), 124 color filter (organic film), 125 layer thickness adjusting layer (organic film), 129 Insulating film (organic film), 205 Counter substrate (substrate for electro-optical device)

Claims (10)

In a method for manufacturing an electro-optical device in which one or more organic films are formed on a substrate for an electro-optical device,
A writing step of storing an electrostatic latent image on the image carrier;
A first developing step of forming a first developer pattern corresponding to the formation pattern of the electrostatic latent image on the image carrier with a developer;
A first transfer step of transferring the first developer pattern from the image carrier to a first electro-optical device substrate;
A fixing step of fixing the first developer pattern on the first electro-optical device substrate;
After the first transfer step, a second developer pattern corresponding to the formation pattern of the electrostatic latent image stored on the image carrier is formed on the image carrier by the developer. Two development steps;
A second transfer step of transferring the second developer pattern from the image carrier to a second electro-optical device substrate.   2. The method according to claim 1, wherein after the first transfer step, the first developing step for the image carrier and the first transfer step for the first electro-optical device substrate are performed. A method for manufacturing an electro-optical device. 3. The image carrier according to claim 1, wherein a ferroelectric layer containing a ferroelectric is formed on a conductive support, and the electrostatic dipole is arranged in accordance with the arrangement direction of the dipoles of the ferroelectric. A latent image is defined,
Before performing the first development step and the second development step, the ferroelectric layer is heated and then cooled to perform a latent image developing step for developing the electrostatic latent image. Manufacturing method of electro-optical device.   4. The method of manufacturing an electro-optical device according to claim 3, wherein, in the latent image developing step, the ferroelectric layer is heated and then cooled after performing a charge removal process from the image carrier. In claim 3 or 4, before performing the writing step, performing an alignment step of arranging the ferroelectric dipoles in one direction,
The method of manufacturing an electro-optical device, wherein in the writing step, a ferroelectric dipole in a predetermined region of the ferroelectric is inverted.   6. The ferroelectric layer according to claim 3, wherein the ferroelectric layer is an organic ferroelectric layer or an inorganic ferroelectric dispersed polymer layer in which an inorganic ferroelectric is dispersed in a polymer. A method for manufacturing an electro-optical device.   7. The electro-optical device substrate according to claim 1, wherein the electro-optical device substrate is subjected to the first developing step, the first transfer step, and the fixing step. On the other hand, a method of manufacturing an electro-optical device, wherein the first developing step, the first transfer step, and the fixing step are performed using another image carrier and different types of developers.   7. The electro-optical device substrate according to claim 1, wherein after the first developing step and the first transfer step are performed on one electro-optical device substrate, another electro-optical device substrate is provided. The first development step and the first transfer step are performed using an image carrier and a different type of developer. In the fixing step, the plurality of first developments transferred to the electro-optical device substrate. A method of manufacturing an electro-optical device, wherein a material pattern is fixed simultaneously.   9. The method of manufacturing an electro-optical device according to claim 1, wherein the electro-optical device substrate is an organic electroluminescence device substrate or a liquid crystal device substrate.   An electro-optical device manufactured by the manufacturing method according to claim 1.

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