JP2007031622A - Polyimide resin and film with conductor using the same - Google Patents
Polyimide resin and film with conductor using the same Download PDFInfo
- Publication number
- JP2007031622A JP2007031622A JP2005219679A JP2005219679A JP2007031622A JP 2007031622 A JP2007031622 A JP 2007031622A JP 2005219679 A JP2005219679 A JP 2005219679A JP 2005219679 A JP2005219679 A JP 2005219679A JP 2007031622 A JP2007031622 A JP 2007031622A
- Authority
- JP
- Japan
- Prior art keywords
- film
- conductor
- polyimide resin
- layer
- conductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920001721 polyimide Polymers 0.000 title claims abstract description 59
- 239000004020 conductor Substances 0.000 title claims abstract description 56
- 239000009719 polyimide resin Substances 0.000 title claims abstract description 40
- 229920005989 resin Polymers 0.000 claims description 14
- 239000011347 resin Substances 0.000 claims description 14
- -1 polyethylene terephthalate Polymers 0.000 claims description 11
- 238000007772 electroless plating Methods 0.000 claims description 10
- 238000009713 electroplating Methods 0.000 claims description 10
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 3
- 239000004760 aramid Substances 0.000 claims description 3
- 229920003235 aromatic polyamide Polymers 0.000 claims description 3
- 229920006122 polyamide resin Polymers 0.000 claims description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 3
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 3
- 229920000417 polynaphthalene Polymers 0.000 claims description 3
- 229920001955 polyphenylene ether Polymers 0.000 claims description 3
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 3
- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 claims description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 2
- 229920000106 Liquid crystal polymer Polymers 0.000 claims description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 11
- YAAWASYJIRZXSZ-UHFFFAOYSA-N pyrimidine-2,4-diamine Chemical compound NC1=CC=NC(N)=N1 YAAWASYJIRZXSZ-UHFFFAOYSA-N 0.000 abstract description 4
- 150000008065 acid anhydrides Chemical class 0.000 abstract description 2
- ZZYXNRREDYWPLN-UHFFFAOYSA-N pyridine-2,3-diamine Chemical compound NC1=CC=CN=C1N ZZYXNRREDYWPLN-UHFFFAOYSA-N 0.000 abstract description 2
- 238000010292 electrical insulation Methods 0.000 abstract 3
- WEWFIUPOLKEEJP-UHFFFAOYSA-N triazine-4,6-diamine Chemical compound NC1=CC(N)=NN=N1 WEWFIUPOLKEEJP-UHFFFAOYSA-N 0.000 abstract 1
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 31
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 18
- 239000004642 Polyimide Substances 0.000 description 18
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 14
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 14
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 13
- 150000004985 diamines Chemical class 0.000 description 13
- 239000008096 xylene Substances 0.000 description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- 239000002904 solvent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 8
- 125000005442 diisocyanate group Chemical group 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000003786 synthesis reaction Methods 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 150000003949 imides Chemical class 0.000 description 7
- 238000003756 stirring Methods 0.000 description 7
- 229920006259 thermoplastic polyimide Polymers 0.000 description 7
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 6
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 6
- BKDVBBSUAGJUBA-UHFFFAOYSA-N bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic acid Chemical compound C1=CC2C(C(O)=O)C(C(=O)O)C1C(C(O)=O)C2C(O)=O BKDVBBSUAGJUBA-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000002329 infrared spectrum Methods 0.000 description 6
- VZXTWGWHSMCWGA-UHFFFAOYSA-N 1,3,5-triazine-2,4-diamine Chemical compound NC1=NC=NC(N)=N1 VZXTWGWHSMCWGA-UHFFFAOYSA-N 0.000 description 5
- DKKYOQYISDAQER-UHFFFAOYSA-N 3-[3-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=C(OC=3C=C(N)C=CC=3)C=CC=2)=C1 DKKYOQYISDAQER-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 239000002798 polar solvent Substances 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- VHNQIURBCCNWDN-UHFFFAOYSA-N pyridine-2,6-diamine Chemical compound NC1=CC=CC(N)=N1 VHNQIURBCCNWDN-UHFFFAOYSA-N 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- ZBMISJGHVWNWTE-UHFFFAOYSA-N 3-(4-aminophenoxy)aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(N)=C1 ZBMISJGHVWNWTE-UHFFFAOYSA-N 0.000 description 3
- LFBALUPVVFCEPA-UHFFFAOYSA-N 4-(3,4-dicarboxyphenyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)C(C(O)=O)=C1 LFBALUPVVFCEPA-UHFFFAOYSA-N 0.000 description 3
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229920005575 poly(amic acid) Polymers 0.000 description 3
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 3
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical group CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 3
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 3
- MISVBCMQSJUHMH-UHFFFAOYSA-N pyrimidine-4,6-diamine Chemical class NC1=CC(N)=NC=N1 MISVBCMQSJUHMH-UHFFFAOYSA-N 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 2
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 2
- SWELIMKTDYHAOY-UHFFFAOYSA-N 2,4-diamino-6-hydroxypyrimidine Chemical compound NC1=CC(=O)N=C(N)N1 SWELIMKTDYHAOY-UHFFFAOYSA-N 0.000 description 2
- VOZKAJLKRJDJLL-UHFFFAOYSA-N 2,4-diaminotoluene Chemical compound CC1=CC=C(N)C=C1N VOZKAJLKRJDJLL-UHFFFAOYSA-N 0.000 description 2
- HXVNBWAKAOHACI-UHFFFAOYSA-N 2,4-dimethyl-3-pentanone Chemical compound CC(C)C(=O)C(C)C HXVNBWAKAOHACI-UHFFFAOYSA-N 0.000 description 2
- MXPYJVUYLVNEBB-UHFFFAOYSA-N 2-[2-(2-carboxybenzoyl)oxycarbonylbenzoyl]oxycarbonylbenzoic acid Chemical compound OC(=O)C1=CC=CC=C1C(=O)OC(=O)C1=CC=CC=C1C(=O)OC(=O)C1=CC=CC=C1C(O)=O MXPYJVUYLVNEBB-UHFFFAOYSA-N 0.000 description 2
- NUIURNJTPRWVAP-UHFFFAOYSA-N 3,3'-Dimethylbenzidine Chemical group C1=C(N)C(C)=CC(C=2C=C(C)C(N)=CC=2)=C1 NUIURNJTPRWVAP-UHFFFAOYSA-N 0.000 description 2
- NBAUUNCGSMAPFM-UHFFFAOYSA-N 3-(3,4-dicarboxyphenyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C1=CC=CC(C(O)=O)=C1C(O)=O NBAUUNCGSMAPFM-UHFFFAOYSA-N 0.000 description 2
- RNLHGQLZWXBQNY-UHFFFAOYSA-N 3-(aminomethyl)-3,5,5-trimethylcyclohexan-1-amine Chemical compound CC1(C)CC(N)CC(C)(CN)C1 RNLHGQLZWXBQNY-UHFFFAOYSA-N 0.000 description 2
- SYBYTAAJFKOIEJ-UHFFFAOYSA-N 3-Methylbutan-2-one Chemical compound CC(C)C(C)=O SYBYTAAJFKOIEJ-UHFFFAOYSA-N 0.000 description 2
- UCQABCHSIIXVOY-UHFFFAOYSA-N 3-[4-[4-(3-aminophenoxy)phenyl]phenoxy]aniline Chemical group NC1=CC=CC(OC=2C=CC(=CC=2)C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 UCQABCHSIIXVOY-UHFFFAOYSA-N 0.000 description 2
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 2
- QYIMZXITLDTULQ-UHFFFAOYSA-N 4-(4-amino-2-methylphenyl)-3-methylaniline Chemical group CC1=CC(N)=CC=C1C1=CC=C(N)C=C1C QYIMZXITLDTULQ-UHFFFAOYSA-N 0.000 description 2
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- OMHOXRVODFQGCA-UHFFFAOYSA-N 4-[(4-amino-3,5-dimethylphenyl)methyl]-2,6-dimethylaniline Chemical compound CC1=C(N)C(C)=CC(CC=2C=C(C)C(N)=C(C)C=2)=C1 OMHOXRVODFQGCA-UHFFFAOYSA-N 0.000 description 2
- QJENIOQDYXRGLF-UHFFFAOYSA-N 4-[(4-amino-3-ethyl-5-methylphenyl)methyl]-2-ethyl-6-methylaniline Chemical compound CC1=C(N)C(CC)=CC(CC=2C=C(CC)C(N)=C(C)C=2)=C1 QJENIOQDYXRGLF-UHFFFAOYSA-N 0.000 description 2
- DZIHTWJGPDVSGE-UHFFFAOYSA-N 4-[(4-aminocyclohexyl)methyl]cyclohexan-1-amine Chemical compound C1CC(N)CCC1CC1CCC(N)CC1 DZIHTWJGPDVSGE-UHFFFAOYSA-N 0.000 description 2
- AJYDKROUZBIMLE-UHFFFAOYSA-N 4-[2-[2-[2-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=CC=C(OC=2C=CC(N)=CC=2)C=1C(C)(C)C1=CC=CC=C1OC1=CC=C(N)C=C1 AJYDKROUZBIMLE-UHFFFAOYSA-N 0.000 description 2
- WUPRYUDHUFLKFL-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=CC(N)=CC=2)=C1 WUPRYUDHUFLKFL-UHFFFAOYSA-N 0.000 description 2
- UTDAGHZGKXPRQI-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(S(=O)(=O)C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 UTDAGHZGKXPRQI-UHFFFAOYSA-N 0.000 description 2
- KIFDSGGWDIVQGN-UHFFFAOYSA-N 4-[9-(4-aminophenyl)fluoren-9-yl]aniline Chemical compound C1=CC(N)=CC=C1C1(C=2C=CC(N)=CC=2)C2=CC=CC=C2C2=CC=CC=C21 KIFDSGGWDIVQGN-UHFFFAOYSA-N 0.000 description 2
- XPAQFJJCWGSXGJ-UHFFFAOYSA-N 4-amino-n-(4-aminophenyl)benzamide Chemical compound C1=CC(N)=CC=C1NC(=O)C1=CC=C(N)C=C1 XPAQFJJCWGSXGJ-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- NJYZCEFQAIUHSD-UHFFFAOYSA-N acetoguanamine Chemical compound CC1=NC(N)=NC(N)=N1 NJYZCEFQAIUHSD-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 2
- TUQQUUXMCKXGDI-UHFFFAOYSA-N bis(3-aminophenyl)methanone Chemical compound NC1=CC=CC(C(=O)C=2C=C(N)C=CC=2)=C1 TUQQUUXMCKXGDI-UHFFFAOYSA-N 0.000 description 2
- ZLSMCQSGRWNEGX-UHFFFAOYSA-N bis(4-aminophenyl)methanone Chemical compound C1=CC(N)=CC=C1C(=O)C1=CC=C(N)C=C1 ZLSMCQSGRWNEGX-UHFFFAOYSA-N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- QPJVMBTYPHYUOC-UHFFFAOYSA-N methyl benzoate Chemical compound COC(=O)C1=CC=CC=C1 QPJVMBTYPHYUOC-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- XNLICIUVMPYHGG-UHFFFAOYSA-N pentan-2-one Chemical compound CCCC(C)=O XNLICIUVMPYHGG-UHFFFAOYSA-N 0.000 description 2
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 2
- AVQQQNCBBIEMEU-UHFFFAOYSA-N 1,1,3,3-tetramethylurea Chemical compound CN(C)C(=O)N(C)C AVQQQNCBBIEMEU-UHFFFAOYSA-N 0.000 description 1
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- MNUHUVIZSPCLFF-UHFFFAOYSA-N 1-methylhept-6-ene-1,2,4,5-tetracarboxylic acid Chemical compound OC(=O)C(C)C(C(O)=O)CC(C(O)=O)C(C=C)C(O)=O MNUHUVIZSPCLFF-UHFFFAOYSA-N 0.000 description 1
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 description 1
- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical compound CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 1
- ZGDMDBHLKNQPSD-UHFFFAOYSA-N 2-amino-5-(4-amino-3-hydroxyphenyl)phenol Chemical group C1=C(O)C(N)=CC=C1C1=CC=C(N)C(O)=C1 ZGDMDBHLKNQPSD-UHFFFAOYSA-N 0.000 description 1
- ZPVFWPFBNIEHGJ-UHFFFAOYSA-N 2-octanone Chemical compound CCCCCCC(C)=O ZPVFWPFBNIEHGJ-UHFFFAOYSA-N 0.000 description 1
- GPXCORHXFPYJEH-UHFFFAOYSA-N 3-[[3-aminopropyl(dimethyl)silyl]oxy-dimethylsilyl]propan-1-amine Chemical compound NCCC[Si](C)(C)O[Si](C)(C)CCCN GPXCORHXFPYJEH-UHFFFAOYSA-N 0.000 description 1
- WECDUOXQLAIPQW-UHFFFAOYSA-N 4,4'-Methylene bis(2-methylaniline) Chemical compound C1=C(N)C(C)=CC(CC=2C=C(C)C(N)=CC=2)=C1 WECDUOXQLAIPQW-UHFFFAOYSA-N 0.000 description 1
- JCRRFJIVUPSNTA-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 JCRRFJIVUPSNTA-UHFFFAOYSA-N 0.000 description 1
- HHLMWQDRYZAENA-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)(C(F)(F)F)C(F)(F)F)C=C1 HHLMWQDRYZAENA-UHFFFAOYSA-N 0.000 description 1
- KMKWGXGSGPYISJ-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=CC(N)=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(N)C=C1 KMKWGXGSGPYISJ-UHFFFAOYSA-N 0.000 description 1
- HYDATEKARGDBKU-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenyl]phenoxy]aniline Chemical group C1=CC(N)=CC=C1OC1=CC=C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 HYDATEKARGDBKU-UHFFFAOYSA-N 0.000 description 1
- VGVHNLRUAMRIEW-UHFFFAOYSA-N 4-methylcyclohexan-1-one Chemical compound CC1CCC(=O)CC1 VGVHNLRUAMRIEW-UHFFFAOYSA-N 0.000 description 1
- WOYZXEVUWXQVNV-UHFFFAOYSA-N 4-phenoxyaniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC=C1 WOYZXEVUWXQVNV-UHFFFAOYSA-N 0.000 description 1
- GZVHEAJQGPRDLQ-UHFFFAOYSA-N 6-phenyl-1,3,5-triazine-2,4-diamine Chemical compound NC1=NC(N)=NC(C=2C=CC=CC=2)=N1 GZVHEAJQGPRDLQ-UHFFFAOYSA-N 0.000 description 1
- MLXZJTOHRMYVQE-UHFFFAOYSA-N 6-pyridin-2-yl-1h-pyridine-2,2-diamine Chemical group C1=CC(N)(N)NC(C=2N=CC=CC=2)=C1 MLXZJTOHRMYVQE-UHFFFAOYSA-N 0.000 description 1
- AXPZDYVDTMMLNB-UHFFFAOYSA-N Benzyl ethyl ether Chemical compound CCOCC1=CC=CC=C1 AXPZDYVDTMMLNB-UHFFFAOYSA-N 0.000 description 1
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004812 Fluorinated ethylene propylene Substances 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- 229920001774 Perfluoroether Polymers 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 1
- 239000003377 acid catalyst Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229920006026 co-polymeric resin Polymers 0.000 description 1
- WQPDQJCBHQPNCZ-UHFFFAOYSA-N cyclohexa-2,4-dien-1-one Chemical compound O=C1CC=CC=C1 WQPDQJCBHQPNCZ-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 1
- 239000003759 ester based solvent Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 description 1
- 239000004210 ether based solvent Substances 0.000 description 1
- JBTWLSYIZRCDFO-UHFFFAOYSA-N ethyl methyl carbonate Chemical compound CCOC(=O)OC JBTWLSYIZRCDFO-UHFFFAOYSA-N 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000003205 fragrance Substances 0.000 description 1
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- PHTQWCKDNZKARW-UHFFFAOYSA-N isopentyl alcohol Natural products CC(C)CCO PHTQWCKDNZKARW-UHFFFAOYSA-N 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 1
- 229940095102 methyl benzoate Drugs 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920009441 perflouroethylene propylene Polymers 0.000 description 1
- DLRJIFUOBPOJNS-UHFFFAOYSA-N phenetole Chemical compound CCOC1=CC=CC=C1 DLRJIFUOBPOJNS-UHFFFAOYSA-N 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- NUMQCACRALPSHD-UHFFFAOYSA-N tert-Butyl ethyl ether Natural products CCOC(C)(C)C NUMQCACRALPSHD-UHFFFAOYSA-N 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000004260 weight control Methods 0.000 description 1
Abstract
Description
本発明は新規なポリイミド樹脂に関し、更にフレキシブルプリント配線板として使用でき、絶縁性フィルムと導体層との密着性及び微細配線での密着力に優れた該ポリイミド樹脂を用いた導体付きフィルムに関する。 The present invention relates to a novel polyimide resin, and further relates to a film with a conductor using the polyimide resin which can be used as a flexible printed wiring board and has excellent adhesion between an insulating film and a conductor layer and adhesion in fine wiring.
ポリイミド樹脂は、優れた耐熱性を有し、機械的、電気的及び化学的特性も良好であり、フレキシブルプリント回路基板(FPC)、テープ自動ボンディング(TAB)用基板等の絶縁材料として用いられている。従来、芳香族ポリイミドフィルムと銅箔とをエポキシ系、アクリル系、ポリアミド系、フェノール系等を使用した接着剤によって貼り合せたフレキシブルプリント配線板がよく知られているが、該配線板の耐熱性や前記フィルムと銅箔からなる導体層の密着性は接着剤の特性によって決まってしまい、特に耐熱性の点で問題があった。また、耐熱性を向上させる接着剤として熱可塑性ポリイミドの前駆体又は熱可塑性ポリイミド樹脂を用い、銅箔等の金属箔を高温で熱圧着させたフレキシブルプリント配線板が知られているが、金属箔を高温で熱圧着しなければならないため加工後に残留歪みの問題が生じ、圧着に用いる金属箔の厚さが通常10μm以上であるのでピッチの狭いパターニングが困難であるという問題があった(例えば特許文献1、2、3、4参照)。 Polyimide resin has excellent heat resistance and good mechanical, electrical and chemical properties, and is used as an insulating material for flexible printed circuit boards (FPC), automatic tape bonding (TAB) substrates, etc. Yes. Conventionally, a flexible printed wiring board in which an aromatic polyimide film and a copper foil are bonded together with an adhesive using epoxy, acrylic, polyamide, phenol, or the like is well known. In addition, the adhesion between the film and the conductor layer made of copper foil is determined by the characteristics of the adhesive, and there is a problem particularly in terms of heat resistance. In addition, a flexible printed wiring board is known in which a thermoplastic polyimide precursor or a thermoplastic polyimide resin is used as an adhesive for improving heat resistance, and a metal foil such as a copper foil is thermocompression bonded at a high temperature. Since there is a problem of residual distortion after processing since the metal must be thermocompression bonded at a high temperature, there is a problem that patterning with a narrow pitch is difficult because the thickness of the metal foil used for pressure bonding is usually 10 μm or more (for example, patents) References 1, 2, 3, 4).
また、絶縁性フィルム、例えば非熱可塑性ポリイミドフィルムやアラミドフィルムに直接金属をスパッタリング又は無電解メッキした後、電解メッキにて金属層を形成する2層構造のフレキシブルプリント配線板も知られているが、一般に密着性が低く特に熱負荷後の密着性の低下が大きいという問題があった。また、非熱可塑性ポリイミドに熱可塑性ポリイミド層を設け、その面上に銅をスパッタリング或いは無電解メッキした後、電解メッキにより金属層を形成するフレキシブルプリント配線板も知られているが(例えば特許文献5、6)微細配線における密着力が低くなる問題があった。
本発明の目的は新規なポリイミド樹脂を提供し、該ポリイミド樹脂を用いることによって、耐熱性及び導体層と絶縁性フィルムとの密着性に優れた、微細配線形成可能なフレキシブルプリント配線板用の導体付きフィルムを提供するものである。 An object of the present invention is to provide a novel polyimide resin, and by using the polyimide resin, a conductor for a flexible printed wiring board that is excellent in heat resistance and adhesion between a conductor layer and an insulating film and capable of forming fine wiring. A film with a cover is provided.
本発明者は、上記課題を解決すべく鋭意検討した結果、絶縁性フィルムの少なくとも片面に特定のポリイミド樹脂層を設け、該ポリイミド樹脂層上に無電解メッキ、次いで電解メッキによって導体層を形成することにより、耐熱性及び密着性に優れた、微細配線形成可能なフレキシブルプリント配線板用の導体付きフィルムが得られることを見出し、本発明に到達した。すなわち、本発明は、下記式(1)乃至(5)で示される構造の少なくとも1種を繰り返し単位に有することを特徴とするポリイミド樹脂である。 As a result of intensive studies to solve the above problems, the present inventor provided a specific polyimide resin layer on at least one surface of the insulating film, and formed a conductor layer on the polyimide resin layer by electroless plating and then electrolytic plating. As a result, it was found that a film with a conductor for a flexible printed wiring board excellent in heat resistance and adhesion and capable of forming fine wiring was obtained, and the present invention was achieved. That is, this invention is a polyimide resin characterized by having at least one of the structures represented by the following formulas (1) to (5) as a repeating unit.
また、本発明は、絶縁性フィルムの少なくとも片面に導体層を形成した導体付きフィルムにおいて、前記絶縁性フィルムと導体層との間に、上記ポリイミド樹脂の層を設けたことを特徴とする導体付きフィルムである。
また、本発明の導体付きフィルムは、前記絶縁性フィルムが、ポリエチレンテレフタレート、ポリナフタレンテレフタレート、ポリフェニレンスルフィド、ポリフェニレンエーテル系樹脂、ポリアミド系樹脂、芳香族ポリアミド系樹脂、ポリイミド系樹脂、フッ素系樹脂、液晶ポリマーのいずれかであって、厚さが1〜200μmであることが好ましい。
また、本発明の導体付きフィルムは、前記ポリイミド樹脂層の厚さが、0.1〜10μmであることが好ましい。
また、本発明の導体付きフィルムは、前記ポリイミド樹脂層の繰り返し単位の40モル%以上が、前記式(1)乃至(5)で示される構造の少なくとも1種であることが好ましい。
また、本発明の導体付きフィルムは、前記導体層の厚さが1〜20μmであって、無電解メッキと電解メッキによって形成されたものが好ましい。
In addition, the present invention provides a film with a conductor in which a conductor layer is formed on at least one side of an insulating film, wherein the polyimide resin layer is provided between the insulating film and the conductor layer. It is a film.
Further, in the film with conductor of the present invention, the insulating film is made of polyethylene terephthalate, polynaphthalene terephthalate, polyphenylene sulfide, polyphenylene ether resin, polyamide resin, aromatic polyamide resin, polyimide resin, fluorine resin, liquid crystal It is any polymer and preferably has a thickness of 1 to 200 μm.
Moreover, it is preferable that the film with a conductor of this invention is 0.1-10 micrometers in thickness of the said polyimide resin layer.
Moreover, as for the film with a conductor of this invention, it is preferable that 40 mol% or more of the repeating unit of the said polyimide resin layer is at least 1 sort (s) of the structure shown by said Formula (1) thru | or (5).
Moreover, the film with a conductor of the present invention preferably has a thickness of the conductor layer of 1 to 20 μm and is formed by electroless plating and electrolytic plating.
本発明のポリイミド樹脂は、導体層と絶縁性フィルムとを強固に密着させることができ、耐熱性も優れている。また、本発明で得られた導体付きフィルムは、耐熱性及び導体層と絶縁性フィルムとの密着性に優れ、微細配線形成後も導体層の密着性に優れるため、微細回路を有する高密度フレキシブルプリント配線板として好適に使用されることから、本発明の導体付きフィルムの工業的な実用性は極めて高いものである。 The polyimide resin of the present invention can firmly adhere the conductor layer and the insulating film and has excellent heat resistance. In addition, the film with a conductor obtained in the present invention is excellent in heat resistance and adhesion between the conductor layer and the insulating film, and excellent in adhesion of the conductor layer even after the fine wiring is formed. Since it is suitably used as a printed wiring board, the industrial utility of the film with a conductor of the present invention is extremely high.
[ポリイミド樹脂]
本発明のポリイミド樹脂は、前記式(1)乃至(5)で示される構造を該樹脂の繰り返し単位の一部に有するものであって、何れの構造もポリイミドの形で構成されることによって機械的強度、耐熱性、密着性の優れた樹脂を形成することができる。
[Polyimide resin]
The polyimide resin of the present invention has a structure represented by the above formulas (1) to (5) as a part of the repeating unit of the resin, and any structure is formed in the form of polyimide. Resins with excellent mechanical strength, heat resistance, and adhesion can be formed.
より具体的には、式(1)の構造を有する樹脂はビシクロ[2,2,2]オクト−7−エン−2,3,5,6−テトラカルボン酸二無水物とジアミン又はジイソシアナートから、式(2)はジアミノピリジンとテトラカルボン酸二無水物とから、式(3)はジアミノ−1,3,5−トリアジン又はジアミノ−1,3,5−トリアジン誘導体とテトラカルボン酸二無水物とから、式(4)はジアミノジピリジルとテトラカルボン酸二無水物とから、式(5)はジアミノピリミジン又はジアミノピリミジン誘導体とテトラカルボン酸二無水物とから、各々得ることが出来る。これ等のポリイミドは、極性溶媒中で上記のモノマー成分とその他必要に応じて、テトラカルボン酸二無水物やジアミン又はジイソシアナートを加え、加熱反応させる事によって得ることができる。その際に、その他のテトラカルボン酸二無水物やジアミン又は、ジイソシアナートを使用する全テトラカルボン酸二無水物や全ジアミン又は全ジイソシアナートの40モル%以内で混合して用いることも可能である。また、10モル%以下の範囲でテトラカルボン酸二無水物とジアミン又はジイソシアナートの比率をずらして分子量を調整して本発明に用いることが可能である。 More specifically, the resin having the structure of formula (1) is bicyclo [2,2,2] oct-7-ene-2,3,5,6-tetracarboxylic dianhydride and diamine or diisocyanate. Formula (2) is from diaminopyridine and tetracarboxylic dianhydride, and Formula (3) is from diamino-1,3,5-triazine or a diamino-1,3,5-triazine derivative and tetracarboxylic dianhydride. Formula (4) can be obtained from diaminodipyridyl and tetracarboxylic dianhydride, and formula (5) can be obtained from diaminopyrimidine or a diaminopyrimidine derivative and tetracarboxylic dianhydride. These polyimides can be obtained by adding a tetracarboxylic dianhydride, a diamine, or a diisocyanate in a polar solvent and, if necessary, a heat reaction. At that time, other tetracarboxylic dianhydrides, diamines, or all tetracarboxylic dianhydrides that use diisocyanates, all diamines, or all diisocyanates can be mixed and used within 40 mol%. It is. Further, the molecular weight can be adjusted by shifting the ratio of tetracarboxylic dianhydride and diamine or diisocyanate within the range of 10 mol% or less, and can be used in the present invention.
式(1)の構造を形成するビシクロ[2,2,2]オクト−7−エン−2,3,5,6−テトラカルボン酸二無水物と反応させるジアミンとして、1,4−ジアミノベンゼン、1,3−ジアミノベンゼン、2,4−ジアミノトルエン、4,4’−ジアミノジフェニルメタン、3,4’−ジアミノジフェニルエーテル、4,4’−ジアミノジフェニルエーテル、3,3’−ジメチル−4,4’−ジアミノビフェニル、2,2’−ジメチル−4,4’−ジアミノビフェニル、4,4’−ジアミノベンゾフェノン、3,3’−ジアミノベンゾフェノン、4,4’−ビス(4−アミノフェニル)スルフィド、4,4’−ジアミノジフェニルスルホン、4,4’−ジアミノベンズアニリド、9,9−ビス(4−アミノフェニル)フルオレン、1,4−ビス(4−アミノフェノキシ)ベンゼン、1,3−ビス(4−アミノフェノキシ)ベンゼン、4,4’−ビス(4−アミノフェノキシ)ビフェニル、4,4’−ビス(3−アミノフェノキシ)ビフェニル、2,2−ビス(4−アミノフェノキシフェニル)プロパン、ビス[4−(4−アミノフェノキシ)フェニル]スルホン、2,2−ビス[4−(4−アミノフェノキシ)フェニル]ヘキサフルオロプロパン、3,3’−ジカルボキシ−4,4’−ジアミノジフェニルメタン、3,3’,5,5’−テトラメチル−4,4’−ジアミノジフェニルメタン、3,3’,5,5’−テトラエチル−4,4’−ジアミノジフェニルメタン、3,3’−ジエチル−5,5’−ジメチル−4,4’−ジアミノジフェニルメタン、3,3’−ジヒドロキシ−4,4’−ジアミノビフェニル、ヘキサメチレンジアミン、イソホロンジアミン、ビス(4−アミノシクロヘキシル)メタン、メチレンビス(2−メチル−4−アミノシクロヘキシル)、1,3−ビス(3−アミノプロピル)−1,1,3,3−テトラメチルジシロキサン、α,ω−ビス(3−アミノプロピル)ポリジメチルシロキサン、2,6−ジアミノピリジン、2,4−ジアミノ−6−メチル−1,3,5−トリアジン、2,4−ジアミノ−6−フェニル−1,3,5−トリアジン、2,4−ジアミノ−6−ヒドロキシピリミジン、4,4'−メチレンビス(シクロヘキシルアミン)、4,4'−ジアミノ−3,3'−ジメチルジフェニルメタン、1,3−ビス(3−アミノフェノキシ)ベンゼン、6,6−ジアミノビピリジル、5(6)−1−(4'−アミノフェニル)−1,3,3−トリメチルインダン等が挙げられる。 As a diamine to be reacted with bicyclo [2,2,2] oct-7-ene-2,3,5,6-tetracarboxylic dianhydride forming the structure of formula (1), 1,4-diaminobenzene, 1,3-diaminobenzene, 2,4-diaminotoluene, 4,4′-diaminodiphenylmethane, 3,4′-diaminodiphenyl ether, 4,4′-diaminodiphenyl ether, 3,3′-dimethyl-4,4′- Diaminobiphenyl, 2,2′-dimethyl-4,4′-diaminobiphenyl, 4,4′-diaminobenzophenone, 3,3′-diaminobenzophenone, 4,4′-bis (4-aminophenyl) sulfide, 4, 4'-diaminodiphenyl sulfone, 4,4'-diaminobenzanilide, 9,9-bis (4-aminophenyl) fluorene, 1,4-bi (4-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) benzene, 4,4′-bis (4-aminophenoxy) biphenyl, 4,4′-bis (3-aminophenoxy) biphenyl, 2 , 2-bis (4-aminophenoxyphenyl) propane, bis [4- (4-aminophenoxy) phenyl] sulfone, 2,2-bis [4- (4-aminophenoxy) phenyl] hexafluoropropane, 3,3 '-Dicarboxy-4,4'-diaminodiphenylmethane, 3,3', 5,5'-tetramethyl-4,4'-diaminodiphenylmethane, 3,3 ', 5,5'-tetraethyl-4,4' -Diaminodiphenylmethane, 3,3'-diethyl-5,5'-dimethyl-4,4'-diaminodiphenylmethane, 3,3'-dihydroxy- , 4′-diaminobiphenyl, hexamethylenediamine, isophoronediamine, bis (4-aminocyclohexyl) methane, methylenebis (2-methyl-4-aminocyclohexyl), 1,3-bis (3-aminopropyl) -1,1 , 3,3-tetramethyldisiloxane, α, ω-bis (3-aminopropyl) polydimethylsiloxane, 2,6-diaminopyridine, 2,4-diamino-6-methyl-1,3,5-triazine, 2,4-diamino-6-phenyl-1,3,5-triazine, 2,4-diamino-6-hydroxypyrimidine, 4,4'-methylenebis (cyclohexylamine), 4,4'-diamino-3,3 '-Dimethyldiphenylmethane, 1,3-bis (3-aminophenoxy) benzene, 6,6-diaminobipyridyl, 5 (6)- - (4'-aminophenyl) -1,3,3-trimethyl indane, and the like.
式(2)乃至(5)の構造を形成するジアミン又はジイソシアナートと反応させるテトラカルボン酸二無水物としては3,4,3’,4’−ビフェニルテトラカルボン酸二無水物、3,4,2’,3’−ビフェニルテトラカルボン酸二無水物、3,4,3’,4’−ジフェニルエーテルテトラカルボン酸二無水物、3,4,3’,4’−ジフェニルスルホンテトラカルボン酸二無水物、ベンゾフェノンテトラカルボン酸二無水物、ビス(ジカルボキシフェニル)プロパン無水物、無水ピロメリト酸、4,4’−(2,2−イソプロピリデン)ジフタル酸二無水物、ビシクロ[2,2,2]オクト−7−エン−2,3,5,6−テトラカルボン酸二無水物等があげられる。 The tetracarboxylic dianhydride to be reacted with the diamine or diisocyanate forming the structure of the formulas (2) to (5) is 3,4,3 ′, 4′-biphenyltetracarboxylic dianhydride, 3,4 , 2 ′, 3′-biphenyltetracarboxylic dianhydride, 3,4,3 ′, 4′-diphenyl ether tetracarboxylic dianhydride, 3,4,3 ′, 4′-diphenylsulfonetetracarboxylic dianhydride , Benzophenonetetracarboxylic dianhydride, bis (dicarboxyphenyl) propane anhydride, pyromellitic anhydride, 4,4 ′-(2,2-isopropylidene) diphthalic dianhydride, bicyclo [2,2,2 Oct-7-ene-2,3,5,6-tetracarboxylic dianhydride and the like.
式(1)と式(2)乃至(5)とを組み合わせた樹脂繰り返し単位の100モル%は望ましい形態の一つである。また、加工の形成し易さを増すために、他のポリイミド構造を含有することも可能である。ここで他のポリイミド構造とは、式(1)を構成する酸二無水物であるビシクロ[2,2,2]オクト−7−エン−2,3,5,6−テトラカルボン酸二無水物以外のテトラカルボン酸二無水物や、式(2)乃至(5)を構成するジアミンとして挙げられたジアミノピリジン、ジアミノ−1,3,5−トリアジン、ジアミノ−1,3,5−トリアジン誘導体、ジアミノジピリジル、ジアミノピリミジン、ジアミノピリミジン誘導体以外のジアミン乃至それに由来するジイソシアナートを用いることで形成可能な構造のことである。この場合、ポリイミド樹脂層の繰り返し単位の40モル%以上が、前記式(1)乃至(5)で示される構造の少なくとも1種であることが、下記で述べる絶縁性フィルムや導体層との密着性及び耐熱性のために好ましい。 100 mol% of the resin repeating unit in which the formula (1) and the formulas (2) to (5) are combined is one of desirable forms. Moreover, in order to increase the ease of forming the process, it is possible to contain other polyimide structures. Here, the other polyimide structure is a bicyclo [2,2,2] oct-7-ene-2,3,5,6-tetracarboxylic dianhydride which is an acid dianhydride constituting the formula (1). Other than tetracarboxylic dianhydrides, diaminopyridines, diamino-1,3,5-triazines, diamino-1,3,5-triazine derivatives mentioned as diamines constituting the formulas (2) to (5), It is a structure that can be formed by using a diamine other than diaminodipyridyl, diaminopyrimidine, or a diaminopyrimidine derivative or a diisocyanate derived therefrom. In this case, 40 mol% or more of the repeating unit of the polyimide resin layer is at least one of the structures represented by the above formulas (1) to (5), and is in close contact with the insulating film and conductor layer described below. Is preferable because of its heat resistance and heat resistance.
前述のテトラカルボン酸二無水物とジアミン又はジイソシアナートの組み合わせによっては、ポリイミドの状態では溶剤に不溶となる場合がある。その様な場合は、ポリイミドの前駆体であるポリアミド酸の状態で例えば絶縁性フィルム等の基体に塗布乾燥し、150〜250℃に加熱し乃至は無水酢酸とピリジンを含む溶液に漬けるなりして脱水閉環してイミド化することで、本発明のポリイミド樹脂を形成することが可能である。 Depending on the combination of the aforementioned tetracarboxylic dianhydride and diamine or diisocyanate, the polyimide may be insoluble in the solvent. In such a case, it is coated and dried on a substrate such as an insulating film in the state of polyamic acid which is a polyimide precursor, heated to 150 to 250 ° C. or immersed in a solution containing acetic anhydride and pyridine. The polyimide resin of the present invention can be formed by dehydrating and ring-closing and imidizing.
上記ポリイミド樹脂を直接得るため乃至は上記ポリイミドの前駆体を得るために乾燥させた極性溶媒が使用される。極性溶媒としてはN−メチル−2−ピロリドン、ジメチルアセトアミド、ジメチルホルムアミド、ジメチルスルホキシド、スルホラン、テトラメチル尿素、γ−ブチロラクトン、m−クレゾール等、ポリイミドを溶解する極性溶媒が挙げられる。また、エステル系又はケトン系又はエーテル系の溶媒を混合して使用する事も可能であり、エステル系溶媒としては安息香酸メチル等が、ケトン系溶媒としては、メチルエチルケトン、メチルプロピルケトン、メチルイソプロピルケトン、メチルブチルケトン、メチルイソブチルケトン、メチル−n−ヘキシルケトン、ジエチルケトン、ジイソプロピルケトン、ジイソブチルケトン、シクロペンタノン、シクロヘキサノン、メチルシクロヘキサノン、アセチルアセトン、ジアセトンアルコール、シクロヘキセン−n−オン等が、エーテル系溶媒としてはジプロピルエーテル、ジイソプロピルエーテル、ジブチルエーテル、テトラヒドロフラン、テトラヒドロピラン、エチルイソアミルアルコール、エチル−t−ブチルエーテル、エチルベンジルエーテル、ジエチレングリコールジメチルエーテル、クレジルメチルエーテル、アニソール、フェネトール等が使用可能である。この時、ポリイミドが該溶媒に溶解する場合には、該溶媒中でイミド化反応をさせることができる。イミドが反応時に生成する水を除去するために、トルエンやキシレン等の水と共沸する溶媒を添加し、系外に取り除く必要がある。また、反応を促進するために、p−トルエンスルホン酸等の酸触媒、ピリジン等のアミン系触媒が好適に用いられる。一方、ポリイミドが該溶媒に溶解しない場合は前述の溶媒中で前駆体であるポリアミド酸を調製し、例えば絶縁性フィルム等の基体に塗布してポリアミド酸の層を形成する。その後、この層を例えば加熱し、或いは無水酢酸とピリジンに浸漬することでイミド化して本発明のポリイミド樹脂を形成することが出来る。 To obtain the polyimide resin directly or to obtain the polyimide precursor, a dried polar solvent is used. Examples of the polar solvent include polar solvents that dissolve polyimide, such as N-methyl-2-pyrrolidone, dimethylacetamide, dimethylformamide, dimethylsulfoxide, sulfolane, tetramethylurea, γ-butyrolactone, and m-cresol. It is also possible to use a mixture of ester, ketone or ether solvents, such as methyl benzoate as the ester solvent, methyl ethyl ketone, methyl propyl ketone, methyl isopropyl ketone as the ketone solvent. , Methyl butyl ketone, methyl isobutyl ketone, methyl-n-hexyl ketone, diethyl ketone, diisopropyl ketone, diisobutyl ketone, cyclopentanone, cyclohexanone, methylcyclohexanone, acetylacetone, diacetone alcohol, cyclohexene-n-one, etc. Solvents include dipropyl ether, diisopropyl ether, dibutyl ether, tetrahydrofuran, tetrahydropyran, ethyl isoamyl alcohol, ethyl tert-butyl ether, ethyl benzyl Ether, diethylene glycol dimethyl ether, cresyl methyl ether, anisole, phenetole and the like can be used. At this time, when the polyimide is dissolved in the solvent, an imidization reaction can be performed in the solvent. In order to remove water generated by the imide during the reaction, it is necessary to add a solvent azeotropically with water, such as toluene and xylene, and remove it from the system. In order to accelerate the reaction, an acid catalyst such as p-toluenesulfonic acid and an amine catalyst such as pyridine are preferably used. On the other hand, when polyimide does not dissolve in the solvent, a polyamic acid as a precursor is prepared in the above-described solvent, and applied to a substrate such as an insulating film to form a polyamic acid layer. Thereafter, this layer can be imidized, for example, by heating or dipping in acetic anhydride and pyridine to form the polyimide resin of the present invention.
式(1)乃至(5)を構成するビシクロ[2,2,2]オクト−7−エン−2,3,5,6−テトラカルボン酸二無水物、ジアミノピリジン、ジアミノ−1,3,5−トリアジン、ジアミノ−1,3,5−トリアジン誘導体、ジアミノジピリジル、ジアミノピリミジン、ジアミノピリミジン誘導体以外に用いられるモノマーとしては、以下の様なテトラカルボン酸二無水物やジアミンが挙げられる。テトラカルボン酸二無水物としては、3,4,3’,4’−ビフェニルテトラカルボン酸二無水物、3,4,2’,3’−ビフェニルテトラカルボン酸二無水物、3,4,3’,4’−ジフェニルエーテルテトラカルボン酸二無水物、3,4,3’,4’−ジフェニルスルホンテトラカルボン酸二無水物、ベンゾフェノンテトラカルボン酸二無水物、ビス(ジカルボキシフェニル)プロパン無水物、ピロメリト酸、4,4’−(2,2−イソプロピリデン)ジフタル酸二無水物等があげられる。ジアミンとしては1,4−ジアミノベンゼン、1,3−ジアミノベンゼン、2,4−ジアミノトルエン、4,4’−ジアミノジフェニルメタン、3,4’−ジアミノジフェニルエーテル、4,4’−ジアミノジフェニルエーテル、3,3’−ジメチル−4,4’−ジアミノビフェニル、2,2’−ジメチル−4,4’−ジアミノビフェニル、4,4’−ジアミノベンゾフェノン、3,3’−ジアミノベンゾフェノン、4,4’−ビス(4−アミノフェニル)スルフィド、4,4’−ジアミノジフェニルスルホン、4,4’−ジアミノベンズアニリド、9,9−ビス(4−アミノフェニル)フルオレン、1,4−ビス(4−アミノフェノキシ)ベンゼン、1,3−ビス(4−アミノフェノキシ)ベンゼン、4,4’−ビス(4−アミノフェノキシ)ビフェニル、4,4’−ビス(3−アミノフェノキシ)ビフェニル、2,2−ビス(4−アミノフェノキシフェニル)プロパン、ビス[4−(4−アミノフェノキシ)フェニル]スルホン、2,2、−ビス[4−(4−アミノフェノキシ)フェニル]ヘキサフルオロプロパン、3,3’−ジカルボキシ−4,4’−ジアミノジフェニルメタン、3,3’,5,5’−テトラメチル−4,4’−ジアミノジフェニルメタン、3,3’,5,5’−テトラエチル−4,4’−ジアミノジフェニルメタン、3,3’−ジエチル−5,5’−ジメチル−4,4’−ジアミノジフェニルメタン、3,3’−ジヒドロキシ−4,4’−ジアミノビフェニル、ヘキサメチレンジアミン、イソホロンジアミン、1,3−ビス(3−アミノプロピル)−1,1,3,3−テトラメチルジシロキサン、α,ω−ビス(3−アミノプロピル)ポリジメチルシロキサン等が挙げられる。 Bicyclo [2,2,2] oct-7-ene-2,3,5,6-tetracarboxylic dianhydride constituting formulas (1) to (5), diaminopyridine, diamino-1,3,5 -Monomers used in addition to triazine, diamino-1,3,5-triazine derivatives, diaminodipyridyl, diaminopyrimidine, and diaminopyrimidine derivatives include the following tetracarboxylic dianhydrides and diamines. Examples of the tetracarboxylic dianhydride include 3,4,3 ′, 4′-biphenyltetracarboxylic dianhydride, 3,4,2 ′, 3′-biphenyltetracarboxylic dianhydride, 3,4,3. ', 4'-diphenyl ether tetracarboxylic dianhydride, 3,4,3', 4'-diphenylsulfone tetracarboxylic dianhydride, benzophenone tetracarboxylic dianhydride, bis (dicarboxyphenyl) propane anhydride, Examples include pyromellitic acid and 4,4 ′-(2,2-isopropylidene) diphthalic dianhydride. Examples of the diamine include 1,4-diaminobenzene, 1,3-diaminobenzene, 2,4-diaminotoluene, 4,4′-diaminodiphenylmethane, 3,4′-diaminodiphenyl ether, 4,4′-diaminodiphenyl ether, 3, 3'-dimethyl-4,4'-diaminobiphenyl, 2,2'-dimethyl-4,4'-diaminobiphenyl, 4,4'-diaminobenzophenone, 3,3'-diaminobenzophenone, 4,4'-bis (4-aminophenyl) sulfide, 4,4′-diaminodiphenyl sulfone, 4,4′-diaminobenzanilide, 9,9-bis (4-aminophenyl) fluorene, 1,4-bis (4-aminophenoxy) Benzene, 1,3-bis (4-aminophenoxy) benzene, 4,4′-bis (4-aminophenoxy) ) Biphenyl, 4,4′-bis (3-aminophenoxy) biphenyl, 2,2-bis (4-aminophenoxyphenyl) propane, bis [4- (4-aminophenoxy) phenyl] sulfone, 2,2, − Bis [4- (4-aminophenoxy) phenyl] hexafluoropropane, 3,3′-dicarboxy-4,4′-diaminodiphenylmethane, 3,3 ′, 5,5′-tetramethyl-4,4′- Diaminodiphenylmethane, 3,3 ′, 5,5′-tetraethyl-4,4′-diaminodiphenylmethane, 3,3′-diethyl-5,5′-dimethyl-4,4′-diaminodiphenylmethane, 3,3′- Dihydroxy-4,4′-diaminobiphenyl, hexamethylenediamine, isophoronediamine, 1,3-bis (3-aminopropyl) -1, , 3,3-tetramethyldisiloxane, alpha, .omega.-bis (3-aminopropyl) polydimethylsiloxane and the like.
式(1)乃至(5)で示される構造を繰り返し単位に有するポリイミド樹脂は、膜性の観点から重量平均分子量は50000以上が望ましく、塗料粘度の観点から重量平均分子量は300000以下が好ましい。また、分子量制御のために、用いるテトラカルボン酸二無水物とジアミンの比率は必ずしも等モルである必要はない。また、樹脂末端をマレイン酸無水物やフタル酸無水物のような酸無水物、あるいは、アニリン等のモノアミンで封止してもよい。 The polyimide resin having the structure represented by formulas (1) to (5) as a repeating unit preferably has a weight average molecular weight of 50000 or more from the viewpoint of film properties, and preferably has a weight average molecular weight of 300000 or less from the viewpoint of paint viscosity. Moreover, the ratio of the tetracarboxylic dianhydride and diamine used for the molecular weight control does not necessarily need to be equimolar. Further, the resin terminal may be sealed with an acid anhydride such as maleic anhydride or phthalic anhydride, or a monoamine such as aniline.
[導体付きフィルム]
次に本発明の導体付きフィルムについて詳述する。
本発明の導体付きフィルムに用いられる絶縁性フィルムには、ポリエチレンテレフタレート、ポリナフタレンテレフタレート、ポリフェニレンスルフィド、ポリフェニレンエーテル系樹脂、ポリアミド系樹脂、商品名「アラミカ」(帝人アドバンストフィルム株式会社製)等の芳香族ポリアミド系樹脂、商品名「カプトン」(東レデュポン株式会社製、デュポン株式会社製)の非熱可塑性ポリイミドシリーズ、商品名「ユーピレックス」(宇部興産株式会社製)の非熱可塑性ポリイミドシリーズ、商品名「アピカル」(株式会社カネカ製)の非熱可塑性ポリイミドシリーズ等のポリイミド系樹脂、テトラフルオロエチレン樹脂、フッ化エチレンプロピレン共重合樹脂、パーフルオロアルコキシ樹脂等のフッ素系樹脂、商品名「ベクスター」(クラレ株式会社製)等の液晶ポリマー等の何れかが用いられる。絶縁性フィルムの厚さは1〜200μmであることが好ましい。
[Film with conductor]
Next, the conductor-equipped film of the present invention will be described in detail.
Examples of the insulating film used for the conductor-coated film of the present invention include fragrances such as polyethylene terephthalate, polynaphthalene terephthalate, polyphenylene sulfide, polyphenylene ether resin, polyamide resin, and trade name “Aramika” (manufactured by Teijin Advanced Films Ltd.). Non-thermoplastic polyimide series of trade name "Kapton" (manufactured by Toray DuPont Co., Ltd., manufactured by DuPont Co., Ltd.) Non-thermoplastic polyimide series such as Apical (manufactured by Kaneka Corporation), fluororesin such as tetrafluoroethylene resin, fluorinated ethylene propylene copolymer resin, perfluoroalkoxy resin, trade name “BEXTER” ( Any such a liquid crystal polymer is Ltd.) and the like. The thickness of the insulating film is preferably 1 to 200 μm.
本発明を構成するポリイミド樹脂層は、前記のポリイミド樹脂におけるポリイミド溶液を絶縁性フィルムの表面に塗工、乾燥することで、容易に形成することができる。塗工の方式は、リバースロール、ロッド(バー)、ブレード、ナイフ、コンマ、ダイ、リップ、グラビア、ロータリースクリーン等の種々の方式が可能である。乾燥には、熱風乾燥機や赤外線乾燥機等、使用する溶媒の除去に充分な温度をかける事が出来るものであれば特に限定されるものではない。ポリイミド樹脂層の厚さは0.1〜10μmが好ましく、厚さが0.1μm未満では導体層との充分な密着が得られにくく、一方10μmを超えると耐熱性や吸湿時の耐熱性に問題が有る場合がある。ポリイミド樹脂層のより好ましい厚さは0.5〜5μmである。 The polyimide resin layer constituting the present invention can be easily formed by coating and drying the polyimide solution in the polyimide resin on the surface of the insulating film. As the coating method, various methods such as reverse roll, rod (bar), blade, knife, comma, die, lip, gravure, and rotary screen are possible. The drying is not particularly limited as long as it can apply a temperature sufficient to remove the solvent to be used, such as a hot air dryer or an infrared dryer. The thickness of the polyimide resin layer is preferably 0.1 to 10 μm. If the thickness is less than 0.1 μm, it is difficult to obtain sufficient adhesion to the conductor layer, while if it exceeds 10 μm, there is a problem in heat resistance and heat resistance during moisture absorption. There may be. A more preferable thickness of the polyimide resin layer is 0.5 to 5 μm.
本発明において導体層を構成する金属としては、銅、ステンレス、アルミニウム、ニッケル、スチール等が挙げられる。この中でも銅が好適に用いられる。導体層の形成には上記金属の箔及びメッキ、スパッタリング等の手段が本発明に適用できる。その中でも前記ポリイミド樹脂層の上に無電解メッキ、次いで電解メッキを行うことで形成することが、密着性が優れているため好ましい。本発明において無電解メッキ及び電解メッキは公知の何れの方法を用いる事が可能である。導体層は、導体付きフィルムの用途に応じて絶縁性フィルムの片面のみに設けられていてもよいし、両面に設けられていてもよい。絶縁性フィルムの両面に導体層を設ける場合では、絶縁性フィルムの両面に前記ポリイミド樹脂層を形成した後、導体層を形成すればよい。 Examples of the metal constituting the conductor layer in the present invention include copper, stainless steel, aluminum, nickel, and steel. Among these, copper is preferably used. For the formation of the conductor layer, means such as the above metal foil and plating, sputtering, etc. can be applied to the present invention. Among these, formation by electroless plating and then electrolytic plating on the polyimide resin layer is preferable because of excellent adhesion. In the present invention, any known method can be used for electroless plating and electrolytic plating. The conductor layer may be provided only on one side of the insulating film or may be provided on both sides according to the use of the film with a conductor. When providing a conductor layer on both surfaces of an insulating film, after forming the said polyimide resin layer on both surfaces of an insulating film, what is necessary is just to form a conductor layer.
以下に実施例、比較例で本発明を具体的に説明するが、本発明がこれ等のみに限定されるものではない。
合成例1
ビシクロ[2,2,2]オクト−7−エン−2,3,5,6−テトラカルボン酸二無水物12.41g(50ミリモル)と3,4,3’、4’−ジフェニルスルホンテトラカルボン酸二無水物17.91g(50ミリモル)と2,6−ジアミノピリジン5.46g(50ミリモル)と1,3−ビス(3−アミノフェノキシ)ベンゼン14.62g(50ミリモル)とをm−クレゾール250mlに溶解し、25℃で1時間撹拌の後、キシレン50mlを加え180℃で3時間撹拌しながら、キシレンと共沸した水を除去して、本発明のポリイミドの溶液を得た。溶液の一部を10倍量のメタノールに投入し、生成物を洗浄、乾燥し、IRスペクトルを測定したところ1781、1722cm−1にイミド特有の吸収ピークが見られた。得られた溶液はそのまま塗工に用いた。
EXAMPLES The present invention will be specifically described below with reference to examples and comparative examples, but the present invention is not limited to these examples.
Synthesis example 1
12.41 g (50 mmol) of bicyclo [2,2,2] oct-7-ene-2,3,5,6-tetracarboxylic dianhydride and 3,4,3 ′, 4′-diphenylsulfonetetracarboxylic 17.91 g (50 mmol) of acid dianhydride, 5.46 g (50 mmol) of 2,6-diaminopyridine and 14.62 g (50 mmol) of 1,3-bis (3-aminophenoxy) benzene were mixed with m-cresol. After dissolving in 250 ml and stirring at 25 ° C. for 1 hour, 50 ml of xylene was added and water azeotroped with xylene was removed while stirring at 180 ° C. for 3 hours to obtain a polyimide solution of the present invention. A part of the solution was added to 10 times the amount of methanol, and the product was washed and dried. When the IR spectrum was measured, absorption peaks peculiar to imides were observed at 1781 and 1722 cm −1 . The obtained solution was used for coating as it was.
合成例2
3,4,3’、4’−ビフェニルテトラカルボン酸二無水物29.42g(100ミリモル)と2,4−ジアミノ−6−メチル−1,3,5−トリアジン12.52g(100ミリモル)とをm−クレゾール250mlに溶解し、25℃で1時間撹拌の後、キシレン50mlを加え180℃で3時間撹拌しながら、キシレンと共沸した水を除去して、本発明のポリイミドの溶液を得た。溶液の一部を10倍量のメタノールに投入し、生成物を洗浄、乾燥し、IRスペクトルを測定したところ1782、1723cm−1にイミド特有の吸収ピークが見られた。得られた溶液はそのまま塗工に用いた。
Synthesis example 2
29.42 g (100 mmol) of 3,4,3 ′, 4′-biphenyltetracarboxylic dianhydride and 12.52 g (100 mmol) of 2,4-diamino-6-methyl-1,3,5-triazine Was dissolved in 250 ml of m-cresol, stirred at 25 ° C. for 1 hour, 50 ml of xylene was added, and the water azeotroped with xylene was removed while stirring at 180 ° C. for 3 hours to obtain a polyimide solution of the present invention. It was. A part of the solution was added to 10 times the amount of methanol, the product was washed and dried, and the IR spectrum was measured. As a result, absorption peaks peculiar to imide were observed at 1782 and 1723 cm −1 . The obtained solution was used for coating as it was.
合成例3
3,4,3’、4’−ベンゾフェノンテトラカルボン酸二無水物32.22g(100ミリモル)と6,6’−ジアミノ−2,2’−ジピリジル11.17g(60ミリモル)と2,2−ビス[4−(4−アミノフェノキシ)フェニル]プロパン16.42g(40ミリモル)とをm−クレゾール250mlに溶解し、25℃で1時間撹拌の後、キシレン50mlを加え180℃で3時間撹拌しながら、キシレンと共沸した水を除去して、本発明のポリイミドの溶液を得た。溶液の一部を10倍量のメタノールに投入し、生成物を洗浄、乾燥し、IRスペクトルを測定したところ1781、1723cm−1にイミド特有の吸収ピークが見られた。得られた溶液はそのまま塗工に用いた。
Synthesis example 3
3,4,3 ′, 4′-benzophenonetetracarboxylic dianhydride 32.22 g (100 mmol), 6,6′-diamino-2,2′-dipyridyl 11.17 g (60 mmol) and 2,2- 16.42 g (40 mmol) of bis [4- (4-aminophenoxy) phenyl] propane was dissolved in 250 ml of m-cresol, stirred for 1 hour at 25 ° C., added with 50 ml of xylene, and stirred for 3 hours at 180 ° C. While the water azeotroped with xylene was removed, the polyimide solution of the present invention was obtained. A part of the solution was added to 10 times the amount of methanol, and the product was washed and dried. When the IR spectrum was measured, absorption peaks peculiar to imide were observed at 1781 and 1723 cm −1 . The obtained solution was used for coating as it was.
合成例4
3,4,3’、4’−ジフェニルエーテルテトラカルボン酸二無水物31.02g(100ミリモル)と2,4−ジアミノ−6−ヒドロキシピリミジン10.09g(80ミリモル)と3,4’−ジアミノジフェニルエーテル4.00g(20ミリモル)とをm−クレゾール250mlに溶解し、25℃で1時間撹拌の後、キシレン50mlを加え180℃で3時間撹拌しながら、キシレンと共沸した水を除去して、本発明のポリイミドの溶液を得た。溶液の一部を10倍量のメタノールに投入し、生成物を洗浄、乾燥し、IRスペクトルを測定したところ1780、1721cm−1にイミド特有の吸収ピークが見られた。得られた溶液はそのまま塗工に用いた。
Synthesis example 4
3,4,3 ′, 4′-diphenyl ether tetracarboxylic dianhydride 31.02 g (100 mmol), 2,4-diamino-6-hydroxypyrimidine 10.09 g (80 mmol) and 3,4′-diaminodiphenyl ether 4.00 g (20 mmol) was dissolved in 250 ml of m-cresol, stirred at 25 ° C. for 1 hour, 50 ml of xylene was added, and the water azeotroped with xylene was removed while stirring at 180 ° C. for 3 hours. A polyimide solution of the present invention was obtained. A part of the solution was added to 10 times the amount of methanol, and the product was washed and dried. When the IR spectrum was measured, absorption peaks peculiar to imide were observed at 1780 and 1721 cm −1 . The obtained solution was used for coating as it was.
合成例5
ビシクロ[2,2,2]オクト−7−エン−2,3,5,6−テトラカルボン酸二無水物7.45g(30ミリモル)と3,4,3’、4’−ジフェニルスルホンテトラカルボン酸二無水物18.08g(70ミリモル)と1,3−ビス(3−アミノフェノキシ)ベンゼン29.23g(100ミリモル)とをm−クレゾール250mlに溶解し、25℃で1時間撹拌の後、キシレン50mlを加え180℃で3時間撹拌しながら、キシレンと共沸した水を除去して、本発明のポリイミドの溶液を得た。溶液の一部を10倍量のメタノールに投入し、生成物を洗浄、乾燥し、IRスペクトルを測定したところ1779、1721cm−1にイミド特有の吸収ピークが見られた。得られた溶液はそのまま塗工に用いた。
Synthesis example 5
7.45 g (30 mmol) of bicyclo [2,2,2] oct-7-ene-2,3,5,6-tetracarboxylic dianhydride and 3,4,3 ′, 4′-diphenylsulfonetetracarboxylic 18.08 g (70 mmol) of acid dianhydride and 29.23 g (100 mmol) of 1,3-bis (3-aminophenoxy) benzene were dissolved in 250 ml of m-cresol, stirred at 25 ° C. for 1 hour, While adding 50 ml of xylene and stirring at 180 ° C. for 3 hours, water azeotroped with xylene was removed to obtain a polyimide solution of the present invention. A part of the solution was added to 10 times the amount of methanol, and the product was washed and dried. When the IR spectrum was measured, absorption peaks peculiar to imide were observed at 1779 and 1721 cm −1 . The obtained solution was used for coating as it was.
比較合成例1
3,4,3’、4’−ジフェニルスルホンテトラカルボン酸二無水物35.83g(100ミリモル)と1,3−ビス(3−アミノフェノキシ)ベンゼン29.23g(100ミリモル)とをm−クレゾール250mlに溶解し、25℃で1時間撹拌の後、キシレン50mlを加え180℃で3時間撹拌しながら、キシレンと共沸した水を除去して、ポリイミドの溶液を得た。溶液の一部を10倍量のメタノールに投入し、生成物を洗浄、乾燥し、IRスペクトルを測定したところ1781、1722cm−1にイミド特有の吸収ピークが見られた。得られた溶液はそのまま塗工に用いた。
Comparative Synthesis Example 1
35.83 g (100 mmol) of 3,4,3 ′, 4′-diphenylsulfonetetracarboxylic dianhydride and 29.23 g (100 mmol) of 1,3-bis (3-aminophenoxy) benzene were mixed with m-cresol. After dissolving in 250 ml and stirring at 25 ° C. for 1 hour, 50 ml of xylene was added and water azeotroped with xylene was removed while stirring at 180 ° C. for 3 hours to obtain a polyimide solution. A part of the solution was added to 10 times the amount of methanol, and the product was washed and dried. When the IR spectrum was measured, absorption peaks peculiar to imides were observed at 1781 and 1722 cm −1 . The obtained solution was used for coating as it was.
[実施例1〜5および比較例1、2]
合成例1から5及び比較合成例1で得られたポリイミド溶液を表1に示すようにして各実施例及び比較例の導体付きフィルムを作製した。具体的には、絶縁性フィルムとして商品名:カプトン150EN(東レデュポン社製)にバーコーターで塗布し、200℃で3時間乾燥し、3μmのポリイミド樹脂層を形成した。ついで(1)サーキュポジット・コンディショナー/ニュートラライザー3320、(2)キャタプリップ404、(3)キャタポジット44、(4)アクセレレイター19E、(5)キューポジットカッパーミックス328L(上記(1)から(5)は何れもシプレイ・ファーイースト社製)の各無電解メッキ用の薬品を用いて、この順に処理を行ない銅の無電解メッキを形成した。更に該無電解メッキ上に銅の電解メッキを形成して厚さ9μmの導体層を形成し本発明及び比較用のフレキシブルプリント配線板用の導体付きフィルムを得た。電解メッキ条件は、CuSO4・5H2Oを100g/リットル、H2SO4を150g/リットル含むメッキ浴、メッキ温度25℃、メッキ時間30分とした。
[Examples 1 to 5 and Comparative Examples 1 and 2]
The polyimide solutions obtained in Synthesis Examples 1 to 5 and Comparative Synthesis Example 1 were prepared as shown in Table 1 to prepare films with conductors of Examples and Comparative Examples. Specifically, a product name: Kapton 150EN (manufactured by Toray DuPont) was applied as an insulating film with a bar coater, and dried at 200 ° C. for 3 hours to form a 3 μm polyimide resin layer. Next, (1) Circposite Conditioner / Neutralizer 3320, (2) Caterpill 404, (3) Cataposit 44, (4) Accelerator 19E, (5) Cueposit Copper Mix 328L (from (1) to (5 ) Were processed in this order using each of the electroless plating chemicals manufactured by Shipley Far East Co.) to form an electroless plating of copper. Further, copper electroplating was formed on the electroless plating to form a conductor layer having a thickness of 9 μm to obtain a film with a conductor for the present invention and a flexible printed wiring board for comparison. The electrolytic plating conditions were a plating bath containing 100 g / liter of CuSO 4 .5H 2 O and 150 g / liter of H 2 SO 4 , a plating temperature of 25 ° C., and a plating time of 30 minutes.
また、ポリイミド樹脂層を設けていない絶縁性フィルム、商品名:カプトン150EN(東レデュポン社製)で前述の無電解メッキ、電解メッキの工程を施して比較例2のフレキシブルプリント配線板用の導体付きフィルムを得た。 Insulating film not provided with a polyimide resin layer, trade name: Kapton 150EN (manufactured by Toray DuPont Co., Ltd.) is subjected to the above-mentioned electroless plating and electrolytic plating steps, and with a conductor for the flexible printed wiring board of Comparative Example 2 A film was obtained.
前記で得られた実施例1〜5及び比較例1、2の導体付きフィルムにおいて、導体層の密着性及び吸湿ハンダ耐熱性の評価を行い、その結果を表1に示した。その結果、実施例1〜5と比較例1のポリイミド樹脂層における常態での密着力(ORIENTEC社製 テンシロン万能試験機を用いた導体層の90度ピール強度、線幅1mm、以後同様)について差は見られないが、150℃で168時間処理後、或いは85℃、85%RHで168時間処理後の導体層の密着力は各実施例の導体付きフィルムが優れていることが確認された。更に85℃、85%RHで168時間処理後280℃のハンダ浴に60秒つけて吸湿ハンダ耐熱性を確認したところ、本発明の実施例1〜5では外観は良好であったが、比較例1ではフクレが発生し、比較例2では微小な発泡が発生して実用上問題であることが確認された。 The films with conductors of Examples 1 to 5 and Comparative Examples 1 and 2 obtained above were evaluated for adhesion of the conductor layer and moisture-absorbing solder heat resistance, and the results are shown in Table 1. As a result, there is a difference in the normal adhesion strength between the polyimide resin layers of Examples 1 to 5 and Comparative Example 1 (90 degree peel strength of conductor layer using TENENTON universal testing machine manufactured by ORIENTEC, line width of 1 mm, and so on). However, the adhesion strength of the conductor layer after treatment at 150 ° C. for 168 hours or after treatment at 85 ° C. and 85% RH for 168 hours was confirmed to be excellent in the film with conductor of each example. Furthermore, after treating for 168 hours at 85 ° C. and 85% RH, and applying it to a solder bath at 280 ° C. for 60 seconds to confirm the heat resistance of the hygroscopic solder, the appearance was good in Examples 1 to 5 of the present invention. In Example 1, blistering occurred, and in Comparative Example 2, minute foaming occurred, which was confirmed as a practical problem.
Claims (7)
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