JP2007027237A - 露光装置、光源装置及びデバイス製造方法 - Google Patents

露光装置、光源装置及びデバイス製造方法 Download PDF

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Publication number
JP2007027237A
JP2007027237A JP2005204090A JP2005204090A JP2007027237A JP 2007027237 A JP2007027237 A JP 2007027237A JP 2005204090 A JP2005204090 A JP 2005204090A JP 2005204090 A JP2005204090 A JP 2005204090A JP 2007027237 A JP2007027237 A JP 2007027237A
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JP
Japan
Prior art keywords
light source
exposure
exposure apparatus
light
chamber
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005204090A
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English (en)
Japanese (ja)
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JP2007027237A5 (enExample
Inventor
Hajime Kanazawa
元 金沢
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2005204090A priority Critical patent/JP2007027237A/ja
Publication of JP2007027237A publication Critical patent/JP2007027237A/ja
Publication of JP2007027237A5 publication Critical patent/JP2007027237A5/ja
Pending legal-status Critical Current

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  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2005204090A 2005-07-13 2005-07-13 露光装置、光源装置及びデバイス製造方法 Pending JP2007027237A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005204090A JP2007027237A (ja) 2005-07-13 2005-07-13 露光装置、光源装置及びデバイス製造方法

Applications Claiming Priority (1)

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JP2005204090A JP2007027237A (ja) 2005-07-13 2005-07-13 露光装置、光源装置及びデバイス製造方法

Publications (2)

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JP2007027237A true JP2007027237A (ja) 2007-02-01
JP2007027237A5 JP2007027237A5 (enExample) 2008-08-28

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ID=37787652

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JP2005204090A Pending JP2007027237A (ja) 2005-07-13 2005-07-13 露光装置、光源装置及びデバイス製造方法

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JP (1) JP2007027237A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008107166A1 (de) * 2007-03-07 2008-09-12 Carl Zeiss Smt Ag Verfahren zum reinigen einer euv-lithographievorrichtung, verfahren zur messung der restgasatmosphäre bzw. der kontamination sowie euv-lithographievorrichtung
JP2013179330A (ja) * 2013-04-25 2013-09-09 Gigaphoton Inc 極端紫外光源装置

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0855774A (ja) * 1994-08-10 1996-02-27 Nikon Corp 露光装置用のフィルタ装置
JPH1187230A (ja) * 1997-09-01 1999-03-30 Canon Inc 露光装置およびデバイス製造方法
JP2000298200A (ja) * 1999-04-13 2000-10-24 Agency Of Ind Science & Technol レーザー励起型ｘ線源
JP2000346817A (ja) * 1999-06-07 2000-12-15 Nikon Corp 測定装置、照射装置および露光方法
JP2001110698A (ja) * 1999-10-04 2001-04-20 Canon Inc 光学装置及びデバイス製造方法
JP2002174700A (ja) * 2000-08-23 2002-06-21 Trw Inc レーザプラズマ極紫外光源及びレーザプラズマ極紫外光線の発生方法
JP2002261001A (ja) * 2000-12-09 2002-09-13 Carl-Zeiss-Stiftung Trading As Carl Zeiss Ｅｕｖリソグラフィ装置の除染をする方法および装置
JP2004061177A (ja) * 2002-07-25 2004-02-26 Canon Inc 光学装置及び測定方法、半導体デバイスの製造方法
JP2004193468A (ja) * 2002-12-13 2004-07-08 Canon Inc 露光装置
JP2005094018A (ja) * 2003-09-18 2005-04-07 Asml Netherlands Bv リソグラフィック装置及びデバイス製造方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0855774A (ja) * 1994-08-10 1996-02-27 Nikon Corp 露光装置用のフィルタ装置
JPH1187230A (ja) * 1997-09-01 1999-03-30 Canon Inc 露光装置およびデバイス製造方法
JP2000298200A (ja) * 1999-04-13 2000-10-24 Agency Of Ind Science & Technol レーザー励起型ｘ線源
JP2000346817A (ja) * 1999-06-07 2000-12-15 Nikon Corp 測定装置、照射装置および露光方法
JP2001110698A (ja) * 1999-10-04 2001-04-20 Canon Inc 光学装置及びデバイス製造方法
JP2002174700A (ja) * 2000-08-23 2002-06-21 Trw Inc レーザプラズマ極紫外光源及びレーザプラズマ極紫外光線の発生方法
JP2002261001A (ja) * 2000-12-09 2002-09-13 Carl-Zeiss-Stiftung Trading As Carl Zeiss Ｅｕｖリソグラフィ装置の除染をする方法および装置
JP2004061177A (ja) * 2002-07-25 2004-02-26 Canon Inc 光学装置及び測定方法、半導体デバイスの製造方法
JP2004193468A (ja) * 2002-12-13 2004-07-08 Canon Inc 露光装置
JP2005094018A (ja) * 2003-09-18 2005-04-07 Asml Netherlands Bv リソグラフィック装置及びデバイス製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008107166A1 (de) * 2007-03-07 2008-09-12 Carl Zeiss Smt Ag Verfahren zum reinigen einer euv-lithographievorrichtung, verfahren zur messung der restgasatmosphäre bzw. der kontamination sowie euv-lithographievorrichtung
US7911598B2 (en) 2007-03-07 2011-03-22 Carl Zeiss Smt Ag Method for cleaning an EUV lithography device, method for measuring the residual gas atmosphere and the contamination and EUV lithography device
JP2013179330A (ja) * 2013-04-25 2013-09-09 Gigaphoton Inc 極端紫外光源装置

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