JP2007023326A5 - - Google Patents

Download PDF

Info

Publication number
JP2007023326A5
JP2007023326A5 JP2005205786A JP2005205786A JP2007023326A5 JP 2007023326 A5 JP2007023326 A5 JP 2007023326A5 JP 2005205786 A JP2005205786 A JP 2005205786A JP 2005205786 A JP2005205786 A JP 2005205786A JP 2007023326 A5 JP2007023326 A5 JP 2007023326A5
Authority
JP
Japan
Prior art keywords
processed
substrate
discharge
chemical
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2005205786A
Other languages
Japanese (ja)
Other versions
JP2007023326A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2005205786A priority Critical patent/JP2007023326A/en
Priority claimed from JP2005205786A external-priority patent/JP2007023326A/en
Publication of JP2007023326A publication Critical patent/JP2007023326A/en
Publication of JP2007023326A5 publication Critical patent/JP2007023326A5/ja
Abandoned legal-status Critical Current

Links

Claims (14)

無電解めっき法により金属薄膜が形成される被処理基板の処理面にめっき処理用の薬液からなる層を形成する金属薄膜形成装置であって前記被処理面を下方にして前記被処理基板を保持・操作するための保持機構と、前記被処理面と間隔をおいてかつ対向して配置される前記薬液を上方に吐出するための吐出手段とを具備することを特徴とする、金属薄膜形成装置。   A metal thin film forming apparatus for forming a layer made of a chemical for plating on a processing surface of a substrate to be processed on which a metal thin film is formed by an electroless plating method, and holding the substrate to be processed with the surface to be processed downward A metal thin film forming apparatus comprising: a holding mechanism for operation; and a discharge means for discharging the chemical solution disposed at an interval and opposite to the surface to be processed. . 前記吐出手段に前記薬液を供給するための薬液供給源と、
前記被処理基板の被処理面に対して前記吐出手段を相対的に移動させるための移動手段とを具備することを特徴とする、請求項1に記載の金属薄膜形成装置。
A chemical supply source for supplying the chemical to the discharge means;
The metal thin film forming apparatus according to claim 1, further comprising a moving unit configured to move the discharge unit relative to a processing surface of the substrate to be processed.
前記吐出手段は、細長い吐出口を有することを特徴とする、請求項1又は2に記載の金属薄膜形成装置。   The metal thin film forming apparatus according to claim 1, wherein the discharge unit has an elongated discharge port. 前記被処理基板は幅寸法を有し、前記吐出手段の吐出口は前記被処理基板の幅寸法より大きい長さ寸法を有することを特徴とする、請求項3に記載の金属薄膜形成装置。   4. The metal thin film forming apparatus according to claim 3, wherein the substrate to be processed has a width dimension, and the discharge port of the discharge means has a length dimension larger than the width dimension of the substrate to be processed. 前記吐出手段の吐出口はその長手方向に2以上に分割されていることを特徴とする、請求項3又は4に記載の金属薄膜形成装置。   5. The metal thin film forming apparatus according to claim 3, wherein the discharge port of the discharge means is divided into two or more in the longitudinal direction. 前記被処理基板の被処理面に対する前記薬液以外の薬液、洗浄液および気体の吐出のためにそれぞれ用いられる他の複数の吐出手段を有することを特徴とする、請求項1〜5のいずれか1項に記載の金属薄膜形成装置。   6. The apparatus according to claim 1, further comprising a plurality of other ejection units respectively used for ejecting a chemical liquid other than the chemical liquid, a cleaning liquid, and a gas to the surface to be processed of the substrate to be processed. The metal thin film forming apparatus described in 1. 前記供給源は、
異なる薬液をそれぞれ貯留するための複数のタンクと、
前記タンクからの薬液の供給を切り替えるための切替手段とを具備することを特徴とする、請求項2に記載の金属薄膜形成装置。
The source is
A plurality of tanks for storing different chemical solutions,
The metal thin film forming apparatus according to claim 2, further comprising switching means for switching supply of the chemical solution from the tank.
前記被処理基板の被処理面と、この被処理面の下方に設けられる吐出手段の吐出口と間隔が、接触することなく無電解めっき用薬液の吐出距離以内となるように前記被処理基板および前記吐出手段の吐出口位置を位置合せする位置合せ機構を設けてなることを特徴とする、請求項1に記載の金属薄膜形成装置。   The substrate to be processed and the substrate to be processed so that the distance between the surface to be processed and the discharge port of the discharge means provided below the surface to be processed is within the discharge distance of the electroless plating chemical without contact. 2. The metal thin film forming apparatus according to claim 1, further comprising an alignment mechanism for aligning an ejection port position of the ejection means. 前記被処理基板の被処理面と、この被処理面の下方に設けられる吐出手段の吐出口と間隔が、接触することなく無電解めっき用薬液の吐出距離以内となるように前記吐出手段に薬液の吐出力を制御する吐出力制御機構を設けてなることを特徴とする、請求項1に記載の金属薄膜形成装置。   A chemical solution is supplied to the discharge means such that the processing surface of the substrate to be processed and the discharge port of the discharge means provided below the processing surface are within the discharge distance of the electroless plating chemical solution without contact. 2. The metal thin film forming apparatus according to claim 1, further comprising a discharge force control mechanism for controlling the discharge force of the metal thin film. 無電解めっき法により金属膜が形成される被処理基板の被処理面の下方にこれと間隔をおいてかつ対向するように配置された吐出手段の細長い吐出口からめっき処理用の薬液を吐出させ、前記薬液を前記吐出口に溜める工程と、
前記吐出手段の吐出口に溜められた薬液を前記被処理基板の表面に接触させる工程と、
前記被処理基板の被処理面に前記薬液を接触させる間に、前記被処理基板又は前記吐出手段を移動させ、これにより前記被処理基板の被処理面に前記薬液からなる層を形成する工程とを具備することを特徴とする、金属薄膜形成方法。
The chemical solution for the plating process is discharged from the elongated discharge port of the discharge means disposed below the surface to be processed of the substrate to be processed on which the metal film is formed by the electroless plating method so as to be opposed to and spaced from the surface. , A step of storing the chemical liquid in the discharge port;
Bringing the chemical stored in the discharge port of the discharge means into contact with the surface of the substrate to be processed;
A step of moving the substrate to be processed or the discharging means while bringing the chemical solution into contact with the surface to be processed of the substrate to be processed, thereby forming a layer made of the chemical on the surface to be processed of the substrate to be processed; A method for forming a metal thin film, comprising:
前記被処理基板の被処理面に前記薬液層を形成するに先立つ前処理又はその後の後処理のため、前記被処理基板の被処理面に向けて前記吐出手段から前記薬液以外の液体を吐出することを特徴とする、請求項10に記載の金属薄膜形成方法。   A liquid other than the chemical liquid is discharged from the discharge means toward the surface to be processed of the substrate to be processed for pre-processing or subsequent post-processing prior to forming the chemical layer on the surface to be processed of the substrate to be processed. The method for forming a metal thin film according to claim 10, wherein: 前記被処理基板の被処理面に前記薬液層を形成するに先立つ前処理又はその後の後処理のため、前記被処理基板の被処理面に向けて前記吐出手段以外の吐出手段から前記薬液以外の液体を吐出することを特徴とする、請求項10に記載の金属薄膜形成方法。   For pre-processing prior to the formation of the chemical solution layer on the surface to be processed of the substrate to be processed or subsequent post-processing, from the discharge means other than the discharge means toward the surface to be processed of the substrate to be processed other than the chemical liquid The metal thin film forming method according to claim 10, wherein a liquid is discharged. 被処理基板の被処理面を下方に向けて設ける工程と、
前記被処理面に塗布するための薬液を吐出する吐出ノズルと前記被処理面との距離を薬液の吐出距離以内に設定する工程と、
前記吐出ノズルから薬液を吐出させた状態で前記吐出ノズルと前記被処理面とを相対的に移動させる工程とを具備してなることを特徴とする、金属薄膜形成方法。
Providing the substrate surface to be processed facing downward;
A step of setting a distance between a discharge nozzle for discharging a chemical for applying to the surface to be processed and the surface to be processed within a discharge distance of the chemical,
A method of forming a metal thin film, comprising: a step of relatively moving the discharge nozzle and the surface to be processed in a state where a chemical is discharged from the discharge nozzle.
無電解めっき液を上方に吐出するように設けられた吐出手段の吐出口の上方でかつ吐出距離以内に被処理基板のめっき被処理面を位置合せして設ける工程と、
前記被処理基板および前記吐出手段を相対的に移動させると共に前記吐出口から無電解めっき用薬液を上方に吐出する工程とを具備してなることを特徴とする、無電解めっき法。
A step of providing the plating target surface of the substrate to be processed above the discharge port of the discharge means provided so as to discharge the electroless plating solution upward and within the discharge distance;
And a step of relatively moving the substrate to be processed and the discharge means and discharging a chemical solution for electroless plating upward from the discharge port.
JP2005205786A 2005-07-14 2005-07-14 Metal thin film formation device, metal thin film formation method, and electroless plating method Abandoned JP2007023326A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005205786A JP2007023326A (en) 2005-07-14 2005-07-14 Metal thin film formation device, metal thin film formation method, and electroless plating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005205786A JP2007023326A (en) 2005-07-14 2005-07-14 Metal thin film formation device, metal thin film formation method, and electroless plating method

Publications (2)

Publication Number Publication Date
JP2007023326A JP2007023326A (en) 2007-02-01
JP2007023326A5 true JP2007023326A5 (en) 2008-07-03

Family

ID=37784496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005205786A Abandoned JP2007023326A (en) 2005-07-14 2005-07-14 Metal thin film formation device, metal thin film formation method, and electroless plating method

Country Status (1)

Country Link
JP (1) JP2007023326A (en)

Similar Documents

Publication Publication Date Title
US8980114B2 (en) Film removing method, nozzle for removing film, and film removing device
JP5313684B2 (en) Apparatus and method for treating the surface of a substrate
JP2013202948A5 (en) Recording apparatus and recording apparatus control method
JP2008155591A5 (en)
KR20100053518A (en) Single phase proximity head having a controlled meniscus for treating a substrate
CN101499408A (en) Substrate processing apparatus and substrate processing method
JP5362623B2 (en) Substrate processing equipment
TW201501814A (en) Exhaust valve system
CN102950087A (en) Coating device
TW200901303A (en) Substrate processing apparatus
US20150072075A1 (en) Film-forming apparatus and film-forming method
JP2005296854A (en) Membrane formation apparatus and membrane formation method
KR20150041378A (en) Chemical liquid supply device and substrate processing apparatus having the same
JP2007023326A5 (en)
JP2019166522A5 (en)
KR20160032966A (en) Apparatus for removing polluter
JP5202400B2 (en) Substrate processing apparatus and substrate processing method
KR101831187B1 (en) Method for treating substrate
TWI601191B (en) Wet chemistry process apparatus
JP2003225600A (en) Functional thin film forming apparatus and functional thin film forming method
JP2009544489A5 (en)
JP2009032868A (en) Substrate processing apparatus
JP5031348B2 (en) Manufacturing method of display device
JP2007229607A5 (en)
TWI439197B (en) Etching apparatus and etching method