JP2007012960A - High dielectric-constant sheet, its manufacturing method, and wiring board - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a high dielectric-constant sheet which is easily made high in capacity and equipped with a double-sided conductive structure. <P>SOLUTION: A high dielectric-constant sheet 20 is equipped with a dielectric layer 21 which is composed of dielectric particles 22, conductive particles 25, and a fixing material 23. The dielectric particles 22 and the conductive particles 25 are to each other by the fixing material 23. The dielectric particles 22 and the conductive particles 25 are arranged two dimensionally in a monolayer manner in a horizontal direction. Therefore, only the dielectric particles 22 are arranged in the thickness direction of the dielectric layer 21 in the area of the dielectric layer 21 where the dielectric particles 22 are present, and only the conductive particles 25 are arranged in the thickness direction of the dielectric layer 21 in the area of the dielectric layer 21 where the conductive particles 25 are present. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a high dielectric constant material sheet including a dielectric layer, a method for manufacturing the same, and a wiring board in which the high dielectric constant material sheet is embedded.

  In recent years, there has been a high demand for high performance and miniaturization of electronic devices, and the demand for higher density and higher functionality of electronic components has been steadily increasing as such demands have increased. Therefore, in order to increase the mounting efficiency of electronic components on the wiring board, for example, various electronic parts (capacitors, etc.) for embedding the wiring board have been proposed.

  Incidentally, a capacitor for embedding a wiring board generally has a structure in which a high dielectric constant sheet made of a ceramic sintered body is sandwiched between electrodes (see, for example, Patent Document 1). The high dielectric constant sheet is manufactured by firing a green sheet containing an unsintered dielectric ceramic. In this way, the dielectric constant of the high dielectric constant material sheet can be relatively easily increased, and a high-capacitance capacitor can be easily manufactured. However, in the above wiring board, after the green sheet is fired together with the electrode forming metal at a high temperature for a predetermined time to produce a high dielectric constant material sheet, the high dielectric constant material sheet on which the electrode is formed is placed in the insulating layer of the wiring board It is manufactured by embedding. However, since the ratio of firing shrinkage and the coefficient of thermal expansion differ between metal and ceramic, warping or peeling is likely to occur during production. Therefore, a highly reliable wiring board with a built-in capacitor cannot be manufactured.

As a capacitor (capacitor layer) manufactured without firing at a high temperature, for example, a capacitor (capacitor layer) in which high dielectric particles are dispersed in an organic resin material has been conventionally proposed (for example, Patent Document 2). 3). For example, as illustrated in FIG. 35, the capacitor 121 includes a dielectric layer 122 and electrodes 123 formed on the upper and lower surfaces of the dielectric layer 122. The dielectric layer 122 is formed by mixing dielectric particles 124 made of barium titanate and an interlayer insulating material 125 made of an organic material. Note that the capacitor 121 is required to have as high a capacitance as possible. For this purpose, for example, it is considered preferable to use a dielectric particle 124 having a high relative dielectric constant.
Japanese Patent Publication No. 6-14580 JP 2003-292733 A Japanese Unexamined Patent Publication No. 2004-292848 (FIG. 3 etc.)

  However, in the conventional capacitor 121, not only the dielectric particles 124 having a high dielectric constant are interposed between both electrodes 123, but also the interlayer insulating material 125 having a dielectric constant relatively lower than that of the dielectric particles 124. Intervene. As a result, a portion having a low dielectric constant exists between both electrodes 123, so that even if dielectric particles 124 having a high dielectric constant are used, the dielectric constant of the entire capacitor 121 can be increased as expected. Can not. Therefore, it is difficult to increase the capacity of the entire capacitor 121.

  Further, when the capacitor 121 is formed, it is necessary to form the electrodes 123 on both surfaces, but it is convenient that the electrodes 123 can be electrically connected to the electrode 123 from the same surface side when mounted on the wiring board. . For this purpose, for example, a hole is formed in the dielectric layer 122 after mounting the wiring board, a via conductor is formed by a method such as plating, and the conduction with the inner layer side electrode of the wiring board is made through the via conductor. There are many difficulties in the process.

  Further, as the capacitor 121, a capacitor having a structure in which both surfaces of the dielectric layer 122 are electrically connected is desired, and a method for easily forming the capacitor 121 is being sought.

  The present invention has been made in view of the above problems, and a first object of the present invention is to provide a high dielectric constant material sheet that is easy to increase in capacity and has a sheet double-sided conductive structure. . The second object is to provide a method for producing a high dielectric constant material sheet capable of easily and reliably obtaining the above excellent high dielectric constant material sheet. A third object is to provide a wiring board in which the above-described excellent high dielectric constant material sheet is embedded.

  And as a means (means 1) for solving the above-mentioned problem, a dielectric layer having a first main surface and a second main surface and comprising a plurality of dielectric particles, conductive particles and a fixing material is used. A high dielectric constant material sheet provided, wherein the plurality of dielectric grains and the conductive grains are arranged two-dimensionally and in a single layer along a plane direction of the dielectric layer, and the fixing material is the plurality of the fixing grains. There is a high dielectric constant material sheet in which the dielectric grains and the conductive grains are fixed to each other.

  Therefore, according to the high dielectric constant material sheet of the above means 1, the plurality of dielectric grains are arranged two-dimensionally and in a single layer along the plane direction of the dielectric layer. For the portion where the grains are present, only the dielectric grains can be arranged along the thickness direction of the dielectric layer. For this reason, it becomes easy to raise the dielectric constant of the whole high dielectric constant material sheet, and it becomes easy to increase the capacity of the high dielectric constant material sheet.

  In addition, for the portion where the conductive particles exist in the dielectric layer, only the conductive particles are arranged along the thickness direction of the dielectric layer. Therefore, since the conductive particles can function as a suitable sheet double-sided conductive structure, for example, the first main surface and the second main surface can be connected through the conductive particles.

  The dielectric particles according to the means 1 are granular materials whose main component is an inorganic material (for example, ceramic) having a dielectric constant higher than that of the fixing material. Further, the dielectric particles may be composed of a single particle or a plurality of particles. In the case of dielectric particles composed of a plurality of particles, the dielectric particles include those formed by sintering (chemically bonding) the plurality of particles in a pressed state. Examples of the ceramic include zirconia, alumina, silicon nitride, boron nitride, silicon carbide, aluminum nitride, barium titanate, and strontium titanate. In particular, a high dielectric constant ceramic is preferable. Here, the high dielectric constant ceramic means a ceramic having a relative dielectric constant of 10 or more, and it is particularly preferable that the relative dielectric constant is 100 or more. In this way, since the dielectric constant of the entire high dielectric constant material sheet is further increased, it is easier to increase the capacity of the high dielectric constant material sheet. Examples of the high dielectric constant ceramic include barium titanate, strontium titanate, and perovskite oxide having a perovskite crystal structure. Specific examples of the perovskite oxide include compounds composed of one or more selected from barium titanate, lead titanate, and strontium titanate.

  Moreover, the conductive particle concerning means 1 means the granular material which is comprised including an electroconductive material and can flow electricity at least on the surface. Examples of preferable conductive particles include metal particles made of a conductive metal such as copper, silver, gold, nickel, titanium, tungsten, and molybdenum. Furthermore, it is better to select metal particles made of a good conductor metal such as copper, silver, gold, etc., and it is particularly preferable to select copper particles from the viewpoint of cost reduction. Note that all of the conductive particles may not be formed using a conductive material such as metal. That is, grains having a structure in which a surface layer portion of a nonconductive material such as resin or ceramic is covered with a conductive material such as metal can be used.

  The high dielectric constant material sheet of the means 1 may include only one such conductive particle, or may include two or more. When two or more conductive grains are present, they may be arranged adjacent to each other or separated from each other as necessary.

  Further, the plurality of dielectric particles and conductive particles may be substantially spherical (for example, a perfect sphere, an elliptical sphere, etc.), a substantially columnar shape (for example, a substantially cylindrical shape, a substantially quadrangular prism shape, a substantially triangular prism shape, etc.), etc. Although it may be a non-spherical shape, in particular, it is preferably a substantially spherical shape. In this way, when the high dielectric constant material sheet is manufactured, when the plurality of dielectric grains and the conductive grains are held by the plurality of positioning portions of the jig, the orientation of the dielectric grains and the conductive grains is taken into consideration. You don't have to. Therefore, a high dielectric constant material sheet can be manufactured efficiently. The plurality of dielectric particles and conductive particles preferably have a high sphericity, and preferably have a uniform particle size. In this way, it becomes easy to hold the dielectric particles and the conductive particles with respect to the positioning portion, so that it becomes easy to manufacture a high dielectric constant material sheet. The dielectric particles and the conductive particles may have the same shape or size, but may be different.

  Further, the particle diameter of the plurality of dielectric grains and the grain diameter of the conductive grains are preferably larger than the maximum thickness of the fixing material, and specifically, set to substantially equal values within a range of 10 μm to 50 μm. It is preferred that If the particle diameters of the dielectric particles and the conductive particles are less than 10 μm, it is difficult to hold the dielectric particles and the conductive particles with respect to the positioning portion. On the other hand, when the particle size of the dielectric particles and the conductive particles is larger than 50 μm, the entire high dielectric constant material sheet becomes thick. In particular, when the dielectric grains and the conductive grains are not spherical but elliptical, the length (thickness diameter) of the dielectric layer in the dielectric grains and the conductive grains is greater than the maximum thickness of the fixing material. Is also preferably large.

  As a method of arranging a plurality of dielectric grains and conductive grains two-dimensionally and in a single layer along the planar direction of the dielectric layer, the plurality of dielectric grains and conductive grains are arranged on the dielectric layer. For example, they may be arranged in a lattice or zigzag pattern along the plane direction. When configured in this manner, the dielectric grains and the conductive grains are uniformly arranged along the planar direction of the dielectric layer, so that the mechanical strength of the high dielectric constant material sheet can be increased uniformly. In addition, when manufacturing a so-called multi-piece high dielectric constant material sheet and dividing the multi-piece high dielectric constant material sheet to obtain a high dielectric constant material sheet, the volume of dielectric particles for each high dielectric constant material sheet The variation in the ratio is reduced. Therefore, it is possible to prevent variation in capacitance between the high dielectric constant material sheets.

  Further, a part of the plurality of dielectric grains and a part of the conductive grains can be exposed on at least one of the first main surface and the second main surface. In this case, another layer (such as a metal layer serving as an electrode) can be bonded to the exposed portion of the dielectric grains or the exposed portion of the conductive grains. Note that “exposed” means a state in which a part of the dielectric grains and a part of the conductive grains appear on at least one of the first main surface and the second main surface. The exposed portions of the grains and the conductive grains may be covered with another layer. In addition, it is preferable that a part of the plurality of dielectric grains is exposed on both the first main surface and the second main surface. If it does in this way, another layer can be joined to the exposed part of a dielectric grain also in the 1st principal surface and the 2nd principal surface.

  Furthermore, it is preferable that the plurality of dielectric grains protrude from the surface of the fixing material so that at least one of the first main surface and the second main surface is uneven. In this way, the physical coupling force acting on the interface between the dielectric layer and the other layer is increased, and the adhesion of the other layer to the dielectric layer is improved. Therefore, it is possible to realize a high dielectric constant material sheet excellent in reliability. Specifically, in the first main surface and / or the second main surface on which the irregularities are formed, the height difference between the dielectric grains and the fixing material and the height difference between the conductive grains and the fixing material are: It is preferable that they are 1 micrometer or more and 10 micrometers or less. The reason for this is that if these height differences become too large, the other layers do not enter the concave portions, so that sufficient physical adhesion cannot be obtained. Further, since the thickness of the dielectric layer is substantially increased, for example, when a capacitor is formed of a high dielectric constant material sheet, the capacitance is reduced.

  In the high dielectric constant material sheet, the height difference between the dielectric grains and the fixing material and the height difference between the conductive grains and the fixing material on the first main surface and / or the second main surface where the irregularities are formed. The difference is set to be larger than 1 μm. The reason is that when these height differences are less than this value, the dielectric layer does not lead to improvement in adhesion, and sufficient physical adhesion cannot be obtained. Of course, these height differences do not exceed the effective diameters of the dielectric grains and the conductive grains.

  The thickness of the fixing material is preferably set to 5 μm or more and 45 μm or less. By setting the thickness of the fixing material to 5 μm or more, high mechanical strength of the high dielectric constant material sheet can be secured and the high dielectric constant material sheet can be enlarged in the thickness direction (Z direction). Can be prevented. On the other hand, by setting the thickness of the fixing material to 45 μm or less, a part of the dielectric grains and a part of the conductive grains can be easily exposed on at least one of the first main surface and the second main surface. Become. In order to expose a part of the dielectric grains and a part of the conductive grains on both the first main surface and the second main surface, the thickness of the fixing material is such that the thickness of the plurality of dielectric grains and It is good that it is smaller than the particle size of the conductive particles.

  The fixing material can be appropriately selected in consideration of cost, bonding properties, insulation properties, mechanical strength, and the like. In addition, when dielectric particles are made of ceramic and a plating layer (metal layer) is directly formed on at least one of the first main surface and the second main surface, the plating adhesion strength is low on the dielectric particles. In this case, it is preferable to use an organic resin material having high plating adhesion strength as the fixing material. In addition, when manufacturing a high dielectric constant material sheet, when carrying out a grain exposure process in which the fixing material is ground to expose part of the dielectric grains and part of the conductive grains, an organic resin material that is easy to grind is used. It is preferable to use it. Note that the reason why the organic resin material is more likely to adhere to the plating than the ceramic may be the difference in the surface state when roughened. When the ceramic is roughened, only a valley-shaped back portion is formed on the surface. However, when the organic resin material is roughened, an anchor portion having a shape entering the back is formed. As a result, since the plating enters the anchor portion of the organic resin material, a strong adhesion can be obtained. The organic resin material is preferably a material having a large force for fixing a plurality of dielectric particles and conductive particles to each other, and suitable examples thereof include an epoxy resin, a polyimide resin, a polyamideimide resin, and a polyamide resin. is there. In addition, composite materials of these resins and glass fibers (glass woven fabric or glass nonwoven fabric) or organic fibers such as polyamide fibers may be used.

  In addition, it is preferable that the relative dielectric constant of the fixing material (low dielectric constant material) is as high as possible. However, since the fixing material is often an organic resin material in consideration of cost, the actual relative dielectric constant is considerably lower than the relative dielectric constant of the dielectric grains (high dielectric constant material) ( For example, 5 or less). Therefore, it is preferable that the volume ratio of the high dielectric constant material in the dielectric layer be as large as possible than the volume ratio of the low dielectric constant material in the dielectric layer. For example, the volume ratio of the high dielectric constant material is preferably set to 60% or more, and the remaining portion is preferably made of the low dielectric constant material. In particular, the volume ratio of the high dielectric constant material is preferably set to 70% or more, and the remaining portion is preferably a low dielectric constant material. In this way, since the dielectric constant of the entire high dielectric constant material sheet is increased, it is easier to increase the capacity of the high dielectric constant material sheet.

  The high dielectric constant material sheet can be a material for forming a laminated electronic component formed by laminating a metal layer and a dielectric portion. Specific examples include capacitors. The total thickness of the high dielectric constant material sheet is not particularly limited, but may be, for example, 1 μm or more and 100 μm or less, and preferably 5 μm or more and 75 μm or less. If the overall thickness is too thin, it becomes difficult to handle as a single sheet. On the other hand, if the overall thickness is too thick, there is a risk of hindering the achievement of high density and miniaturization of the wiring board when the high dielectric constant material sheet is embedded in the wiring board. Moreover, since the level | step difference will arise easily if the whole thickness is too thick, there exists a possibility that it may become difficult to ensure the smoothness of the substrate surface. That is, the high dielectric constant material sheet may be a material for forming an electronic component for embedding a wiring board.

  Furthermore, it is preferable that the high dielectric constant material sheet further includes a carrier material that adheres to at least one of the first main surface and the second main surface to protect the dielectric layer. In this way, it is possible to prevent the dielectric layer from being damaged when the high dielectric constant material sheet is manufactured. Further, even if the dielectric layer is thin, the carrier layer becomes thick due to adhesion, so that the handleability of the dielectric layer is improved.

  In the high dielectric constant material sheet, a metal layer may be directly formed on at least one of the first main surface and the second main surface. According to this configuration, the metal layer as the other layer can be a high dielectric constant material sheet in close contact with the dielectric layer without using other materials such as an adhesive. Therefore, since the dielectric grains and other materials do not exist in series along the thickness direction of the dielectric layer, it is easy to achieve a high dielectric constant.

  Such a metal layer may be directly formed on one surface (one of the first main surface and the second main surface) of the dielectric layer, or both surfaces (the first main surface and the second main surface). (Both) may be formed directly. When the metal layer directly formed on both the first main surface and the second main surface is provided, the high dielectric constant material sheet is, for example, a capacitor.

  When the high dielectric constant material sheet includes a metal layer, the metal layer is preferably formed using a material having excellent conductivity. Specifically, silver, gold, platinum, copper, titanium, aluminum, It may be formed using one or more alloys selected from palladium, nickel, tungsten and the like. In particular, it is preferable to use, for example, copper or silver as the material for forming the metal layer. This is because copper and silver have high conductivity and are suitable as electrode materials.

  The thickness of the metal layer is preferably, for example, from 0.1 μm to 50 μm. This is because if the metal layer is too thin, it may be difficult to ensure electrical reliability. On the other hand, if the metal layer becomes too thick, the thickness of the high dielectric constant material sheet may increase. In that respect, if the thickness is set within a range of 0.1 μm or more and 50 μm or less, it is possible to prevent an increase in the thickness of the entire high dielectric constant material sheet while ensuring electrical reliability.

  Examples of the metal layer include a plating layer, a metal paste layer, a metal foil sticking layer, a sputtering layer, a vapor deposition layer, and an ion plating layer. Among these, a plating layer is preferable. This is because the plating layer can be formed in a short time and is advantageous in reducing the cost of the high dielectric constant material sheet.

  The conductive particles are preferably electrically connected to the metal layers on both sides of the sheet. If it does in this way, it will become easy to make a conductive grain function as a suitable sheet both sides conduction structure. In order to form a capacitor with a high dielectric constant material sheet, the metal layer on one side of the sheet is divided into a conductive grain side region in contact with the conductive grains and a dielectric grain side region in contact with the dielectric grains, It is necessary to prevent the conductive grain side region and the dielectric grain side region from contacting each other. The conductive particles may be electrically connected only to the metal layer on one side of the sheet. Furthermore, the conductive particles may be electrically connected to a conductor other than the high dielectric constant material sheet without being electrically connected to the metal layers on both sides of the sheet. In this case, the metal layer and the conductive particles may be electrically insulated as necessary.

  The high dielectric constant material sheet may be a material for forming an active component such as a semiconductor integrated circuit chip, a transistor, or a diode, or may be an active component itself. The high dielectric constant material sheet may be a material for forming a passive component such as a resistor, a capacitor, an inductor, or a coil, or may be a passive component itself. Note that the high dielectric constant material sheet referred to here does not only refer to the finished product of the high dielectric constant material sheet, but only after a metal layer is formed later (for example, after being embedded in a wiring board). The completed high dielectric constant material sheet is also included.

  Further, as another means (means 2) for solving the above problem, there is a wiring board characterized in that the high dielectric constant material sheet of the means 1 is embedded.

  Therefore, according to the wiring board of the above means 2, since the high-permittivity material sheet having a high capacity is embedded, when the high-permittivity material sheet is a capacitor, noise can be removed efficiently and the IC chip. It is possible to stabilize the power to be supplied to the IC chip and to supply power to the IC chip and the like. Further, as a result of the high dielectric constant material sheet being embedded in the wiring board, the component mountable area on the surface of the wiring board is increased, so that other electronic components can be mounted there. In addition, since the high dielectric constant material sheet has a sheet double-sided conductive structure, when the wiring board has a conductor layer, the conductor layer on the upper side of the sheet and the conductor layer on the lower side of the sheet are electrically connected via conductive particles. It is also possible. Therefore, since it is not necessary to bypass the wiring connecting the conductor layers so as to avoid the high dielectric constant material sheet, it is possible to secure an area capable of wiring in the side portion of the high dielectric constant material sheet in the wiring board. it can. Therefore, it is convenient to construct many circuits in the wiring board.

  In addition, since the dielectric grains are arranged two-dimensionally and in a single layer along the plane direction of the dielectric layer, the thickness direction of the dielectric layer in the portion where the dielectric grains exist in the dielectric layer Only the dielectric grains can be arranged along. For this reason, it becomes easy to raise the dielectric constant of the whole high dielectric constant material sheet, and it becomes easy to increase the capacity of the high dielectric constant material sheet.

  The wiring substrate has a configuration in which, for example, an insulating layer and a conductor layer are formed on a core substrate. In this case, the high dielectric constant material sheet may be embedded in the core substrate, may be embedded between the core substrate and the insulating layer, or may be embedded in the insulating layer. In addition, other components such as resistance elements and inductors may be embedded in the wiring board.

  The material for forming the core substrate is not particularly limited, and can be appropriately selected in consideration of cost, workability, insulation, mechanical strength, and the like. Examples of the core substrate include a resin substrate, a ceramic substrate, and a metal substrate. Specific examples of the resin substrate include an EP resin (epoxy resin) substrate, a PI resin (polyimide resin) substrate, a BT resin (bismaleimide-triazine resin) substrate, and a PPE resin (polyphenylene ether resin) substrate. In addition, a substrate made of a composite material of these resins and organic fibers such as glass fibers (glass woven fabric or glass nonwoven fabric) or polyamide fibers may be used. Alternatively, a substrate made of a resin-resin composite material obtained by impregnating a thermosetting resin such as an epoxy resin with a three-dimensional network fluorine-based resin base material such as continuous porous PTFE may be used. Specific examples of the ceramic substrate include an alumina substrate, a beryllia substrate, a glass ceramic substrate, and a substrate made of a low-temperature fired material such as crystallized glass. Specific examples of the metal substrate include a copper substrate, a copper alloy substrate, a substrate made of a single metal other than copper, and a substrate made of an alloy of a metal other than copper.

  An example of a suitable insulating layer formed on the core substrate is a resin insulating layer. The reason is that the resin insulating layer is preferable as a support for the high dielectric constant material sheet, and therefore, for example, a structure in which the high dielectric constant material sheet is embedded can be easily realized. Therefore, the mass productivity and the ability to cope with costs are increased. Further, it is advantageous for increasing the size of the wiring board. The resin insulating layer is formed using, for example, a thermosetting resin such as an EP resin (epoxy resin), a PI resin (polyimide resin), a BT resin (bismaleidotriazine resin), a phenol resin, a xylene resin, or a polyester resin. The

  The conductor layer is patterned on the core substrate or the insulating layer by a known method such as a subtractive method, a semi-additive method, or a full additive method. Examples of the metal material used for forming the conductor layer include copper, a copper alloy, nickel, a nickel alloy, tin, and a tin alloy. A built-up layer in which conductor layers and insulating layers are alternately laminated may be formed on one or both surfaces of the core substrate.

  As a preferable method (means 3) for relatively easily and reliably manufacturing the high dielectric constant material sheet described in means 1, a structure in which a plurality of positioning portions are two-dimensionally arranged along the jig main surface And a plurality of dielectric grains and conductive grains are held in the plurality of positioning portions in a two-dimensional manner along the jig main surface. A positioning step of arranging in a single layer, a transfer step of preparing a carrier material having an adhesion layer, and transferring the plurality of dielectric particles and conductive particles positioned on the jig onto the adhesion layer; There is a method for producing a high dielectric constant material sheet, comprising a fixing step of fixing the plurality of dielectric particles and the conductive particles to each other with an organic resin material to form a dielectric layer.

  Therefore, according to the means 3, since the plurality of dielectric particles and the conductive particles are held in the plurality of positioning portions of the jig in the positioning step, the plurality of dielectric particles and the conductive particles can be reliably arranged. When the transfer step is performed, the plurality of dielectric particles and the conductive particles are temporarily fixed to the carrier material, so that the positional relationship between the plurality of dielectric particles and the conductive particles can be maintained. Thereafter, if a fixing step is performed, a plurality of dielectric particles and conductive particles can be fixed to each other while maintaining the positional relationship, so that the high dielectric constant material sheet of the means 1 can be obtained relatively easily. it can.

  In addition, since the dielectric grains are arranged in a single layer along the plane direction of the dielectric layer, the dielectric layer is formed along the thickness direction of the dielectric layer in the portion where the dielectric grains exist in the dielectric layer. Only grains can be placed. For this reason, it becomes easy to raise the dielectric constant of the whole high dielectric constant material sheet, and it becomes easy to increase the capacity of the high dielectric constant material sheet. In addition, since the conductive particles are arranged in a single layer along the plane direction of the dielectric layer, only the conductive particles are provided along the thickness direction of the dielectric layer in the portion where the conductive particles exist in the dielectric layer. Can be placed. As a result, since the high dielectric constant material sheet has a sheet double-sided conductive structure, when the wiring board has a conductor layer, the conductor layer on the upper side of the sheet and the conductor layer on the lower side of the sheet are electrically connected via the conductive particles. It is also possible to do. Therefore, since it is not necessary to bypass the wiring connecting the conductor layers so as to avoid the high dielectric constant material sheet, it is possible to secure an area capable of wiring in the side portion of the high dielectric constant material sheet in the wiring board. it can. Therefore, it is convenient to construct many circuits in the wiring board.

  Hereinafter, the manufacturing method of the high dielectric constant material sheet described in the means 3 will be described.

  First, a jig having a structure in which a plurality of positioning portions are two-dimensionally arranged along the jig main surface is prepared, and a positioning step is performed. In addition, as the jig used in the positioning step, a jig having a concave portion that supports a plurality of dielectric grains and conductive grains, a grain size of the plurality of dielectric grains, and a grain size of the conductive grains Although a jig | tool (mesh member) etc. which have a small mesh | network are mentioned, It is preferable that it is a mesh member. This is because the mesh member has a small mesh, and the mesh can be used as a suitable positioning portion for holding the dielectric particles and the conductive particles. Moreover, it is because the printing screen of a commercially available screen printing machine can also be used as a jig.

  The mesh member is more preferably made of metal. Since the mesh member made of metal has high strength, when holding a plurality of dielectric particles and conductive particles in each positioning portion, for example, even if evacuation is performed through the plurality of positioning portions, the mesh member is not deformed. This is because it can be prevented. In addition, since the metal mesh member is not easily affected by static electricity, movement of a plurality of dielectric particles due to static electricity can be prevented.

  In the positioning step, a plurality of dielectric grains and conductive grains are held in a plurality of positioning portions of the jig. As the dielectric grains, compounds composed of one or more selected from the above-mentioned barium titanate, lead titanate and strontium titanate are suitable. Moreover, as the conductive particles, metal particles made of a good conductor metal such as copper, silver, and gold are suitable.

  Next, a carrier material having an adhesion layer is prepared and a transfer process is performed. Here, the carrier material used in the transfer step is preferably a resin film having an adhesion layer. If it does in this way, a commercially available resin film can be used as a carrier material. The resin film is preferably transparent. If it does in this way, the fixed situation of a plurality of dielectric particles and conductive particles can be checked via a resin film. The adhesion layer may be an adhesive layer or an adhesive layer, but is preferably an adhesive layer. If it is an adhesive layer, it is easier to peel off the carrier material than if it is an adhesive layer. Also, the carrier material can be reused. The carrier material used in the transfer step may be a conductive metal foil that has an adhesive layer and should be used later as an electrode. In this way, it is not necessary to perform the metal layer forming step of directly forming the metal layer on the dielectric layer, so that a high dielectric constant material sheet can be manufactured efficiently. Examples of the conductive metal foil include copper foil, nickel foil, silver foil, and gold foil.

  In the transfer step, the adhesion layer side of the carrier material is disposed above the jig, and the adhesion layer is brought into contact with a plurality of dielectric particles and conductive particles held on the jig. In this state, a pressing force is applied in the vertical direction. As a result, the plurality of dielectric particles and conductive particles positioned on the jig are transferred onto the adhesion layer. In the transfer step, when transferring the plurality of dielectric grains and conductive grains onto the adhesion layer, a part of the plurality of dielectric grains and a part of the conduction grains are embedded in the adhesion layer. It is preferable to make it. In this way, the contact area between the dielectric particles and the adhesion layer is increased, so that a plurality of dielectric particles can be reliably temporarily fixed at desired positions. In addition, since the adhesion area between the conductive particles and the adhesion layer increases, the conductive particles can be securely fixed at a desired position. Further, when the carrier material is peeled off, a part of the plurality of dielectric grains and a part of the conductive grains can be exposed from the organic resin material.

  Next, a fixing step is performed in which the transferred dielectric particles and conductive particles are fixed to each other with an organic resin material to form a dielectric layer. More specifically, for example, a sheet-like organic resin material is disposed on a carrier material adhesion layer onto which a plurality of dielectric particles and conductive particles are transferred, and in this state, a pressing force is applied in the same direction as the vertical direction. As a result, a part of the organic resin material penetrates between the dielectric grains or between the dielectric grains and the conductive grains, and the plurality of dielectric grains and the conductive grains are fixed to each other. The thermally melted organic resin material is poured between each dielectric particle or between the dielectric particles and the conductive particles and cooled, so that the plurality of dielectric particles and the conductive particles are fixed to each other. Also good.

  Note that, after the fixing step, a grain exposing step of exposing a part of the plurality of dielectric grains and a part of the conductive grains may be performed. The grain exposing step is a concavo-convex forming step of forming concavo-convex on the surface of the dielectric layer by projecting part of the plurality of dielectric grains and part of the conductive grains from the organic resin material. Is preferred. As a method of exposing or projecting a part of the dielectric grains and a part of the conductive grains, for example, by removing the surface layer of the organic resin material by surface grinding, the part of the plurality of dielectric grains and the conductive grains are removed. A physical method in which a part of the grains is exposed or protruded from the organic resin material can be used. Further, as another method of exposing or projecting part of the dielectric grains and part of the conductive grains, for example, by removing the surface layer of the organic resin material by plasma ashing or etching treatment, the plurality of dielectrics A chemical method in which a part of the grains and a part of the conductive grains are exposed or protruded from the organic resin material can be used. According to the plasma ashing or etching treatment, when removing the surface layer of the organic resin material, physical stress is not applied to the dielectric particles and conductive particles. The shape can be maintained. This is considered preferable for improving the adhesion.

  In the grain exposing step (the unevenness forming step), it is preferable that a part of the plurality of dielectric grains and a part of the conductive grains are protruded from the organic resin material by peeling the carrier material. . In this way, a part of the plurality of dielectric grains and a part of the conductive grains can be easily exposed (protruded) from the organic resin material, so that a high dielectric constant material sheet can be produced efficiently.

  In addition, after the fixing step, the grain exposing step, and the unevenness forming step, a metal layer forming step of directly forming a metal layer on the dielectric layer may be performed. Examples of the method for directly forming the metal layer include plating, printing and baking of metal paste, sticking of metal foil, sputtering, vapor deposition, ion plating, and the like. When it is desired to form a very thin metal layer of 0.1 μm or more and 10 μm or less, it is particularly preferable to select a method such as plating, sputtering, CVD, PVD, or ion plating. In particular, the plating method enables a large amount of processing, which is advantageous for reducing the cost of the high dielectric constant material sheet.

  As another preferable method (means 4) suitable for manufacturing the high dielectric constant material sheet described in means 1, a jig having a structure in which a plurality of positioning portions are two-dimensionally arranged along the jig main surface is prepared. A positioning step of holding the plurality of dielectric grains in the plurality of positioning portions so that the plurality of dielectric grains are arranged two-dimensionally and in a single layer along the jig main surface; A transfer step of transferring the plurality of dielectric particles positioned on the jig onto the adhesion layer, and a part of the transferred dielectric particles being conductive particles. And a fixing step of fixing the plurality of dielectric particles transferred onto the adhesion layer and the conductive particles with an organic resin material to form a dielectric layer. There is a method for producing a dielectric material sheet.

  As another preferred method (means 5) suitable for the production of the high dielectric constant material sheet described in means 1, it has a plurality of meshes smaller than the particle diameters of the plurality of dielectric grains and the conductive grains. Preparing a mesh member that becomes a closed portion in which a part of the plurality of meshes is blocked, and holding the plurality of dielectric particles in a portion that is not the closed portion of the plurality of meshes, A positioning step of arranging a plurality of dielectric grains two-dimensionally and in a single layer along the plane direction of the mesh member, and preparing a carrier material having an adhesion layer, the plurality of the positioning members on the mesh member A first transfer step of transferring the dielectric particles onto the adhesion layer; a second transfer step of transferring the conductive particles to a location where the plurality of dielectric particles are not transferred on the adhesion layer; A plurality of dielectric grains and the conductive Some have high dielectric constant sheet manufacturing method which comprises a fixing step to be fixed by an organic resin material dielectric layer to each other.

  Further, another preferable method (means 6) suitable for manufacturing the high dielectric constant material sheet described in means 1 includes a plurality of meshes smaller than the particle diameter of the plurality of dielectric grains, and the plurality of meshes. By preparing a first mesh member to be a first closed portion that is partially closed, and holding the plurality of dielectric particles in a portion that is not the first closed portion of the plurality of meshes, A first positioning step in which the plurality of dielectric grains are arranged two-dimensionally and in a single layer along a plane direction of the mesh member; and a plurality of meshes smaller than the grain size of the conductive grains; 2nd mesh member used as the 2nd obstruction | occlusion part obstruct | occluded among these is prepared, and the said electroconductive particle is hold | maintained in the location which is not the said 2nd obstruction | occlusion part among these meshes. A two-dimensional and single layer along the plane direction of the mesh member A second positioning step for arranging, a carrier material having an adhesion layer, a first transfer step for transferring the plurality of dielectric particles positioned on the first mesh member onto the adhesion layer; A second transfer step of transferring the conductive particles positioned on the second mesh member to a portion on the adhesion layer where the plurality of dielectric particles are not transferred; and the transferred plurality of dielectric particles And a method of manufacturing a high dielectric constant material sheet, comprising: a fixing step in which the conductive particles are fixed to each other with an organic resin material to form a dielectric layer.

  The high dielectric constant material sheet of the means 1 can be obtained relatively easily also by the methods of the means 4, 5, and 6. Moreover, since only dielectric grains can be arranged along the thickness direction of the dielectric layer, it is easy to increase the capacity of the high dielectric constant material sheet. Moreover, since only the conductive particles can be arranged along the thickness direction of the dielectric layer, the high dielectric constant material sheet has a sheet double-sided conductive structure.

[First Embodiment]

  Hereinafter, a ceramic capacitor built-in wiring board according to a first embodiment of the present invention and a method for manufacturing the same will be described with reference to FIGS.

  As shown in FIG. 1, this ceramic capacitor built-in wiring board 71 (wiring board) is formed by forming a buildup layer 73 on one side of a core board 72 made of glass epoxy. The build-up layer 73 includes four resin insulating layers 81, 82, 83, and 84 (so-called interlayer insulating layers) that are also made of an epoxy resin. On the interface between the core substrate 72 and the resin insulating layer 81, a conductor layer 90 made of copper is patterned. Conductor layers 91, 92, 93 made of copper are patterned at the interfaces between the resin insulating layers 81, 82, 83, 84. In addition, terminal pads 94 in which copper is coated with nickel-gold plating are formed at a plurality of locations on the surface of the outermost resin insulation layer 84. Each terminal pad 94 can be electrically connected to an IC chip 97 having a function as an MPU. Further, via conductors 96 are provided in the core substrate 72 and the resin insulating layers 81, 82, 83, 84, respectively. Most of these via conductors 96 are arranged on the same axis, and the conductor layers 91, 92, 93 and the terminal pads 94 are electrically connected to each other through them.

  As shown in FIG. 1, BGA pads 55 electrically connected to the via conductors 96 are formed in a lattice shape at a plurality of locations on the lower surface of the core substrate 72. Further, the lower surface of the core substrate 72 is almost entirely covered with the solder resist 52. An opening 53 for exposing the BGA pad 55 is formed at a predetermined position of the solder resist 52. On the surface of the BGA pad 55, a plurality of solder bumps 49 are provided for electrical connection with a mother board (not shown). The solder bump 49 is made of tin-lead solder having a composition of 90 Pb / 10 Sn.

  The ceramic capacitor built-in wiring board 71 shown in FIG. 1 is mounted on the mother board by the solder bumps 49. The ceramic capacitor built-in wiring board 71 of this embodiment is a BGA (ball grid array). The form of the wiring board 71 with a built-in ceramic capacitor is not limited to BGA alone, and may be, for example, LGA (land grid array), PGA (pin grid array), or the like.

  Inside the build-up layer 73 (specifically, the interface between the first resin insulating layer 81 and the second resin insulating layer 82) is the ceramic capacitor 10 (capacitor) shown in FIGS. It is implemented in an embedded state. The ceramic capacitor 10 is formed by a high dielectric constant material sheet 20 including a dielectric layer 21. A first metal electrode layer 11 (metal layer) made of copper plating is formed on the first main surface 117 of the dielectric layer 21, and a second metal made of copper plating is formed on the second main surface 118 of the dielectric layer 21. A metal electrode layer 31 (metal layer) is formed.

  The dielectric layer 21 includes a plurality of dielectric grains 22, one conductive grain 25, and an interlayer insulating material 23. The dielectric grains 22 are made of a sintered body of barium titanate, which is a kind of high dielectric constant ceramic, and function as a dielectric between the first metal electrode layer 11 and the second metal electrode layer 31. The conductive particles 25 are metal particles made of copper and have a function of electrically connecting the first metal electrode layer 11 and the second metal electrode layer 31. As shown in FIG. 3, the first metal electrode layer 11 is divided into a dielectric particle side region 12 that contacts the plurality of dielectric particles 22 and a conductive particle side region 13 that contacts the conductive particles 25. ing. Further, the first metal electrode layer 11 is not formed on the dielectric particles 22 adjacent to the conductive particles 25. For this reason, the dielectric grain side region 12 and the conductive grain side region 13 are spaced apart so as not to contact each other. Note that only one conductive particle 25 of the present embodiment is provided in the dielectric layer 21, but in order to reduce the electric resistance generated between the first metal electrode layer 11 and the second metal electrode layer 31. Two or more may be provided.

  As shown in FIGS. 1 and 2, the interlayer insulating material 23 is made of an epoxy resin which is a kind of organic resin material, and fixes a plurality of dielectric particles 22 to each other, and the dielectric particles 22 and the conductive particles 25. Have the function of adhering to each other. Further, the interlayer insulating material 23 has a function of insulating the dielectric particles 22 from each other and insulating the dielectric particles 22 and the conductive particles 25. The interlayer insulating material 23 also functions as a dielectric between the first metal electrode layer 11 and the second metal electrode layer 31, similarly to the dielectric particles 22.

  As shown in FIGS. 1 to 3, the dielectric grains 22 and the conductive grains 25 are two-dimensionally arranged in a single layer along the planar direction of the dielectric layer 21. Specifically, the dielectric particles 22 and the conductive particles 25 are arranged in a lattice shape (array shape) along the planar direction of the dielectric layer 21. And the dielectric material part 24 is formed by arrange | positioning the interlayer insulation material 23 around each dielectric material grain 22. As shown in FIG. The dielectric portion 24 is a region (see FIG. 3) where the dielectric particles 22 are densely packed. Thereby, in the dielectric part 24, the dielectric grains 22 and the interlayer insulating material 23 are alternately and regularly arranged along the planar direction of the dielectric layer 21. Each dielectric particle 22 has a substantially spherical shape in which the degree of contour is equal to or less than the thickness of the first metal electrode layer 11 and the second metal electrode layer 31 (about 0.5 μm to 1.5 μm), and the particle size thereof is 30 μm. Is set to Similarly, the conductive particles 25 have a substantially spherical shape in which the degree of contour is equal to or less than the thickness of the first metal electrode layer 11 and the second metal electrode layer 31, and the particle size is set to 30 μm. That is, the particle size of each dielectric particle 22 and the particle size of the conductive particle 25 are set to be substantially equal to each other. Further, the distance (pitch) between the centers of the adjacent dielectric particles 22 is set to 30 μm, which is the same as the particle size of the dielectric particles 22 and the conductive particles 25, and the center between the adjacent dielectric particles 22 and the conductive particles 25 is set. The inter-distance is also set to 30 μm. Therefore, the dielectric particles 22 are in contact with each other, and the dielectric particles 22 and the conductive particles 25 are also in contact with each other. As shown in FIG. 3, the pitch between the dielectric grains 22 and the pitch between the dielectric grains 22 and the conductive grains 25 are also lateral (in the vertical direction in FIG. 3) It is also equal in the left-right direction in FIG.

In this embodiment, the volume ratio of the dielectric grains 22 in the dielectric portion 24 is 70%, which is larger than the volume ratio (30%) of the interlayer insulating material 23 in the dielectric portion 24. Moreover, the dielectric constant of the dielectric particles 22 is 3000, and the relative dielectric constant of the interlayer insulating material 23 is 3. Therefore, the relative dielectric constant of the interlayer insulating material 23 is relatively lower than the relative dielectric constant of the dielectric grains 22. In addition, the maximum thickness of the dielectric portion 24 is 30 μm, which is the same as the particle size of the dielectric particles 22 and the conductive particles 25. Therefore, the capacitance density of the dielectric part 24 in this embodiment is 0.056 μF / cm ² , and the capacitance coefficient of the dielectric part 24 in this embodiment is 168 pF / cm. The “capacitance coefficient” is the product of the capacitance density and the thickness of the dielectric portion 24.

  As shown in FIGS. 1 and 2, the particle size of each dielectric particle 22 is larger than the maximum thickness (about 20 μm) of the interlayer insulating material 23. For this reason, the upper end portion of each dielectric particle 22 protrudes from the first main surface 117, and the lower end portion of each dielectric particle 22 protrudes from the second main surface 118. The particle diameter of the conductive particles 25 is also larger than the maximum thickness of the interlayer insulating material 23. For this reason, the upper end portion of the conductive particles 25 protrudes from the first main surface 117, and the lower end portion of the conductive particles 25 protrudes from the second main surface 118. As a result, irregularities are formed on both the first main surface 117 and the second main surface 118. Thereby, in the 1st main surface 117 and the 2nd main surface 118, the height difference of the dielectric particle 22 and the interlayer insulation material 23, and the height difference of the electrically conductive particle 25 and the interlayer insulation material 23 are about 3 micrometers-7 micrometers. Is set to The thickness of the first metal electrode layer 11 and the second metal electrode layer 31 is set to about 30 μm. For this reason, the thickness of the entire ceramic capacitor 10 is about 90 μm, which is extremely thin.

  As shown in FIG. 1, since the first metal electrode layer 11 is in an upward state when mounted on the wiring board, the first metal electrode layer 11 is electrically connected to the via conductor 96 in the second resin insulating layer 82. On the other hand, since the second metal electrode layer 31 is in a downward state when mounted on the wiring board, the second metal electrode layer 31 is electrically connected to the via conductor 96 in the resin insulating layer 82 via the conductive particles 25. The via conductor 96 in the resin insulating layer 82 is electrically connected to the conductive particles 25 via the first metal electrode layer 11 (conductive particle side region 13), but the first metal electrode layer 11 ( It may be directly connected to the conductive particles 25 without passing through the conductive particle side region 13).

  Then, when the ceramic capacitor 10 having such a configuration is energized and a predetermined voltage is applied between the first metal electrode layer 11 and the second metal electrode layer 31, a positive charge is accumulated on one electrode, Negative charges accumulate on the electrodes. As a result, the ceramic capacitor 10 functions as a capacitor. In the present embodiment, the ceramic capacitor 10 has a function of removing noise and stabilizing the power to be supplied to the IC chip 97, and is involved in improving the operability of the IC chip 97.

  Next, a method for manufacturing the ceramic capacitor 10 will be described with reference to FIGS.

  First, a mesh member 100 (jig) as shown in FIGS. 4 and 5 is prepared, and a positioning step is performed. The mesh member 100 is configured by orthogonally crossing a plurality of metal wires arranged in parallel with each other along the vertical direction and a plurality of metal wires arranged in parallel with each other along the horizontal direction. The mesh member 100 has a plurality of positioning portions 101 arranged in a lattice shape along the plane direction (the jig main surface direction) of the mesh member 100. Each positioning portion 101 is a space (mesh) configured in a square shape by four metal wires, and the mesh width is smaller than the particle size of the dielectric particles 22 and the particle size of the conductive particles 25 (30 μm). (About 25 μm). In addition, one mesh among the plurality of meshes is a closed block 106. For this reason, the dielectric particles 22 are reliably supported by the positioning portion 101 (metal wire) that is not the closed portion 106. In the present embodiment, a printing screen of a commercially available screen printing machine is used as the mesh member 100.

  In the positioning step, vacuuming is performed from one side of the mesh member 100 through the plurality of positioning portions 101, so that the plurality of dielectric particles 22 are fitted into the positioning portions 101. Thereby, the plurality of dielectric grains 22 are held in the plurality of positioning portions 101, and the respective dielectric grains 22 are arranged in a substantially lattice shape along the planar direction of the mesh member 100. In this embodiment, since the vacuuming is performed, the plurality of dielectric grains 22 can be quickly held by the plurality of positioning portions 101. In addition, it is possible to prevent displacement and dropout of each dielectric particle 22 due to vibration or the like.

  Next, a metal foil 111 (carrier material) as shown in FIG. 6 is prepared, and the first transfer process and the second transfer process are performed. In addition, the metal foil 111 of this embodiment has the adhesion layer 112 on one side. The adhesion layer 112 is formed of an epoxy resin adhesive.

  In the first transfer step, the adhesion layer 112 side of the metal foil 111 is disposed above the mesh member 100, and the adhesion layer 112 is brought into contact with the plurality of dielectric particles 22 positioned on the mesh member 100 (FIG. 7). reference). In this state, a pressing force is applied in the vertical direction (downward in FIG. 7). As a result, each dielectric particle 22 is transferred onto the adhesion layer 112. At this time, since a part of the plurality of dielectric particles 22 is embedded in the adhesion layer 112, the contact area between each dielectric particle 22 and the adhesion layer 112 is increased, so that each dielectric particle 22 is more reliably secured. Can be positioned. Further, in the second transfer step, the conductive particles 25 are brought into contact with a portion of the adhesion layer 112 where the dielectric particles 22 are not transferred (see FIG. 8). As a result, the conductive particles 25 are transferred onto the adhesion layer 112. At this time, since a part of the conductive particles 25 is embedded in the adhesion layer 112, a contact area between the conductive particles 25 and the adhesion layer 112 is increased, so that the conductive particles 25 can be positioned more reliably. Thereafter, a first curing step of heating at a predetermined temperature and for a predetermined time is performed, and the adhesion layer 112 is slightly cured by heat. As a result, the dielectric particles 22 and the conductive particles 25 are temporarily fixed to the metal foil 111 via the adhesion layer 112.

  Next, a fixing process is performed, and the plurality of dielectric particles 22 and the conductive particles 25 are fixed to each other with an interlayer insulating material 23 made of an epoxy resin. More specifically, a sheet-like interlayer insulating material 23 is disposed on the adhesion layer 112 side of the metal foil 111 onto which the plurality of dielectric grains 22 and conductive grains 25 have been transferred (see FIG. 9). A pressing force is applied in the same direction (downward in FIG. 9). Specifically, in this embodiment, a pressing force (0.7 MPa) is applied in the same direction as the vertical direction while heating to a temperature of 100 ° C. or higher under a vacuum of 20 Torr (≈2666 Pa) or less (vacuum heat press). Along with this, the metal foil 111, the adhesion layer 112, each dielectric particle 22, the conductive particle 25, and the interlayer insulating material 23 are pressed along the stacking direction, and the metal foil 111 and the interlayer insulating material 23 are interposed through the adhesion layer 112. Joined (thermocompression bonding). At this time, a part of the interlayer insulating material 23 enters between the dielectric grains 22 or between the dielectric grains 22 and the conductive grains 25 (see FIG. 10).

  Further, a second curing step of heating at a predetermined temperature and a predetermined time is performed to thermally cure the adhesion layer 112. As a result, the plurality of dielectric particles 22 and the conductive particles 25 are fixed to each other, and the respective dielectric particles 22 and the conductive particles 25 cannot be moved. Since the adhesion layer 112 is made of the same epoxy resin as the interlayer insulating material 23, it is integrated with the interlayer insulating material 23 by heat. As a result, the dielectric layer 21 is obtained (see FIG. 11).

After the fixing step, a first unevenness forming step (grain exposure step) is performed. Specifically, a part of the plurality of dielectric particles 22 and a part of the conductive particles 25 are protruded from the interlayer insulating material 23 to form irregularities on the surface of the dielectric layer 21, and the surface is defined as the second main surface. 118 (see FIG. 12). In this embodiment, the surface layer of the interlayer insulating material 23 is removed by performing surface grinding using a conventionally known buffing apparatus, lapping apparatus, polishing apparatus, blast apparatus, O ₂ plasma, etc. Part of the dielectric grains 22 and part of the conductive grains 25 are projected from the interlayer insulating material 23. Note that the amount of protrusion of each dielectric particle 22 and conductive particle 25 can be adjusted by changing the grinding time or changing the hardness of the abrasive.

  After the first unevenness forming step, a first metal layer forming step (metal layer forming step) is performed. Specifically, the electroless copper plating is performed on the second main surface 118 of the dielectric layer 21 based on a conventionally known technique, and then the electrolytic copper plating is further performed to form a second metal electrode having a thickness of about 30 μm. Layer 31 is formed directly (see FIG. 13). If the second metal electrode layer 31 is formed by electroless copper plating and electrolytic copper plating, a large amount of processing can be performed, so that the ceramic capacitor 10 can be manufactured at low cost.

  Next, a core substrate 72 on which a conductor layer 90 and a first resin insulation layer 81 are formed is prepared, and a dielectric with the second metal electrode layer 31 facing downward on the first resin insulation layer 81 is prepared. The body layer 21 is mounted (see FIG. 14). At the time of mounting, the ceramic capacitor 10 of the present embodiment is an intermediate product before completion.

  More specifically, an uncured film material for forming the first resin insulation layer 81 is prepared, and is pasted on the surface of the core substrate 72 with a laminator or the like. As said film material, what consists of uncured thermosetting resin is suitable, for example. Next, the dielectric layer 21 in the state of FIG. 13 is mounted on the film material and pressed with a predetermined pressure. At this time, since the film material is still uncured, a part of the dielectric layer 21 can be easily embedded in the film material. Next, heating is performed to cure the film material, and the intermediate product of the ceramic capacitor 10 is supported and fixed to the first resin insulating layer 81.

  Next, the metal foil 111 is removed by etching or the like (see FIG. 15), and a second unevenness forming step (grain exposure step) is performed. Specifically, the same process as the first unevenness forming process (surface grinding in this embodiment) is performed. That is, a part of the plurality of dielectric grains 22 and a part of the conductive grains 25 are protruded from the interlayer insulating material 23 to form irregularities on the surface of the dielectric layer 21, and the surface is used as the first main surface 117. (See FIG. 16).

  Next, a second metal layer forming step (metal layer forming step) is performed. Specifically, electroless copper plating is performed on the first main surface 117 of the dielectric layer 21 based on a conventionally known method, and then electrolytic copper plating is further performed to form a first metal electrode having a thickness of about 30 μm. Layer 11 is formed directly (see FIG. 17). Thereafter, exposure and development are performed to form a plating resist 115 on the first metal electrode layer 11 (see FIG. 18). At this time, the plating resist 115 is formed so as not to cover the dielectric grains 22 adjacent to the conductive grains 25. Next, the first metal electrode layer 11 present in the non-resist formation portion is removed by etching to form the first metal electrode layer 11 divided into the dielectric grain side region 12 and the conductive grain side region 13 (FIG. 19). reference). The ceramic capacitor 10 of this embodiment is completed at this point.

  Thereafter, the conductor layer 91 in the first resin insulation layer 81 is formed in accordance with a conventionally known method. Next, the above-mentioned uncured film material is pasted on the first resin insulating layer 81 with a laminator or the like, and then thermally cured to form the second resin insulating layer 82. At this point, the ceramic capacitor 10 is completely embedded.

  Next, after drilling a via hole in the second resin insulating layer 82, further filling with copper plating or copper paste and printing to form a via conductor 96 and a second conductor layer 92 are formed. To do.

  Thereafter, the resin insulation layers 83 and 84 of the third layer and the fourth layer (the outermost layer) are formed by the same method, and the BGA pad 55 is formed on the lower surface side of the core substrate 72 according to a conventionally known method. A solder resist 52 and solder bumps 49 are formed. As a result, the ceramic capacitor built-in wiring board 71 of FIG. 1 is completed.

  Therefore, according to the present embodiment, the following effects can be obtained.

  (1) According to the ceramic capacitor 10 of the present embodiment, only the conductive particles 25 are arranged along the thickness direction of the dielectric layer 21 in the portion where the conductive particles 25 exist in the dielectric layer 21. Therefore, since the conductive particles 25 function as a suitable sheet double-sided conductive structure, the first main surface 117 and the second main surface 118 can be electrically connected via the conductive particles 25. As a result, electrical connection is made to either the first metal electrode layer 11 or the second metal electrode layer 31 from either the first resin insulation layer 81 side or the second resin insulation layer 82 side. be able to. In addition, the conductive layer 90 of the resin insulating layer 81 and the conductive layer 92 of the resin insulating layer 83 can be electrically connected via the conductive particles 25 and the via conductor 96. In this way, the wiring connecting the conductor layer 90 and the conductor layer 92 does not have to be detoured so as to avoid the ceramic capacitor 10, so that wiring is possible on the side portion of the ceramic capacitor 10 in the buildup layer 73. A large area can be secured. That is, the degree of freedom of wiring in the ceramic capacitor built-in wiring board 71 is increased.

  (2) In general, in the conventional ceramic capacitor, the dielectric grains 22 having a relatively high relative dielectric constant and the interlayer insulating material 23 having a relatively low relative dielectric constant are formed in the thickness direction of the dielectric layer 21. (See, for example, the relationship between the dielectric particles 124 and the interlayer insulating material 125 shown in FIG. 35).

  In this case, the relative dielectric constant ε1 of the entire ceramic capacitor can be obtained from the equation 1 / ε1 = V1 × 1 / ε2 + V2 × 1 / ε3. Here, ε2 is the relative dielectric constant of the dielectric particles 22, ε3 is the relative dielectric constant of the interlayer insulating material 23, V1 is the volume ratio (%) of the dielectric particles 22 in the dielectric portion 24, and V2 is This is the volume ratio (%) of the interlayer insulating material 23 in the dielectric portion 24.

  However, for example, even when the relative dielectric constant ε1 is calculated by setting the relative dielectric constant ε2 to 3000, the relative dielectric constant ε3 to 3, the volume ratio V1 to 70%, and the volume ratio V2 to 30%, ε1 = 10.0 is obtained. The rate ε1 is not so high.

  On the other hand, in the ceramic capacitor 10 of the present embodiment, the dielectric grains 22 and the interlayer insulating material 23 exist in parallel along the thickness direction of the dielectric layer 21. Therefore, the dielectric grains 22 and the interlayer insulating material 23 do not exist in series along the thickness direction of the dielectric layer 21.

  In this case, the relative dielectric constant ε1 of the entire ceramic capacitor 10 is obtained from the equation ε1 = V1 × ε2 + V2 × ε3 (from Nielsen's compound law). Here, if the relative permittivity ε1 is calculated under the same conditions as in the prior art, ε1 = 70 (%) × 3000 + 30 (%) × 3 = 2100.9, so the relative permittivity ε1 is considerably higher than in the prior art. Become. Therefore, it is easy to increase the capacity of the ceramic capacitor 10 of this embodiment.

  (3) The dielectric particles 22 and the conductive particles 25 of the present embodiment are substantially spherical. Therefore, since the plurality of dielectric particles 22 and the conductive particles 25 can be easily aligned, the manufacture of the ceramic capacitor 10 is facilitated. Further, when the ceramic capacitor 10 is manufactured, it is not necessary to consider the orientation of the dielectric particles 22 when the dielectric particles 22 are held on the positioning portion 101 of the mesh member 100. Furthermore, when the conductive particles 25 are transferred onto the adhesion layer 112, the direction of the conductive particles 25 need not be taken into consideration. Therefore, the ceramic capacitor 10 can be manufactured efficiently.

  (4) In the present embodiment, the ceramic capacitor 10 is embedded in the ceramic capacitor built-in wiring board 71, and the IC chip 97 is mounted on the upper surface of the ceramic capacitor built-in wiring board 71. The ceramic capacitor 10 and the IC chip 97 are electrically connected to each other. Connected. As a result, the length of the wiring connecting the ceramic capacitor 10 and the IC chip 97 is shortened, so that the signal speed between the ceramic capacitor 10 and the IC chip 97 can be increased.

(5) In the manufacturing method of the ceramic capacitor 10 (high-dielectric-constant material sheet 20) of the present embodiment, a process that has been essential in the past (for example, a process of firing a green sheet containing an unsintered dielectric material for a predetermined time). It is not necessary to carry out. Therefore, the ceramic capacitor 10 can be manufactured efficiently.
[Second Embodiment]

  Next, the manufacturing method of the ceramic capacitor 10 of 2nd Embodiment is demonstrated based on FIGS. Here, the description will focus on the parts that are different from the first embodiment, and the common parts will not be described in place of the same member numbers.

  The manufacturing method of this embodiment differs from the manufacturing method of 1st Embodiment by the point which uses the resin film 113 (carrier material) shown, for example in FIG. In the present embodiment, the resin film 113 is a commercially available adhesive tape having an adhesive layer 114 (adhesion layer) on one side.

  First, in the first transfer process and the second transfer process, the plurality of dielectric particles 22 and conductive particles 25 are transferred onto the adhesive layer 114 of the resin film 113. (See FIG. 21). At this time, a part of the plurality of dielectric grains 22 and a part of the conductive grains 25 are embedded in the adhesive layer 114. Next, a fixing process is performed, and the plurality of dielectric grains 22 and the conductive grains 25 are fixed to each other with the interlayer insulating material 23. More specifically, a sheet-like interlayer insulating material 23 is disposed on the adhesive layer 114 side of the resin film 113 to which a plurality of dielectric particles 22 and conductive particles 25 are transferred (see FIG. 22), and heating is performed in this state. Apply joining force. Thereby, the resin film 113 and the interlayer insulating material 23 are bonded (thermocompression bonding) via the adhesive layer 114. At this time, a part of the interlayer insulating material 23 enters between the dielectric grains 22 or between the dielectric grains 22 and the conductive grains 25 (see FIG. 23). Furthermore, when a curing step of heating at a predetermined temperature and for a predetermined time is performed to thermally cure the interlayer insulating material 23, the plurality of dielectric particles 22 and the conductive particles 25 are fixed to each other, and the dielectric layer 21 is obtained.

  After the fixing process, a first unevenness forming process (grain exposure process) is performed, and a part of the plurality of dielectric grains 22 and a part of the conductive grains 25 are projected from the interlayer insulating material 23 (see FIG. 24). Further, after the first unevenness forming step, the first metal layer forming step (metal layer forming step) is performed to directly form the second metal electrode layer 31 on the second main surface 118 of the dielectric layer 21 (FIG. 25). reference).

  Next, a core substrate 72 on which a conductor layer 90 and a first resin insulation layer 81 are formed is prepared, and a dielectric with the second metal electrode layer 31 facing downward on the first resin insulation layer 81 is prepared. The body layer 21 is mounted (see FIG. 26). Next, a 2nd uneven | corrugated formation process (grain exposure process) is implemented. Specifically, a step different from the first unevenness forming step is performed. That is, by peeling the resin film 113, a part of the plurality of dielectric grains 22 and a part of the conductive grains 25 are protruded from the interlayer insulating material 23 (see FIG. 27). The adhesive layer 114 of the present embodiment is made of a material (Intellimer manufactured by Nitta Co., Ltd.) whose adhesive strength is reduced by heat. Since the adhesive strength is reduced when the curing process is performed, the resin film 113 is used. Can be easily peeled off.

  Next, a second metal layer forming step (metal layer forming step) is performed to directly form the first metal electrode layer 11 on the first main surface 117 of the dielectric layer 21 (see FIG. 28). Thereafter, exposure and development are performed to form a plating resist on the first metal electrode layer 11, and the first metal electrode layer 11 present in the resist non-formation portion is removed by etching, whereby the first metal electrode layer 11 is divided into a dielectric grain side region 12 and a conductive grain side region 13 (see FIG. 29). As a result, the ceramic capacitor 10 is completed. Thereafter, the second to fourth (outermost) resin insulation layers 82, 83, 84, etc. are formed in accordance with a conventionally known technique, thereby completing the ceramic capacitor built-in wiring board 71 of FIG.

  Therefore, according to the manufacturing method of the present embodiment, even when the adhesive layer 114 performs the curing process, the dielectric particles 22 and the conductive particles 25 are continuously held. It can be prevented more reliably. Therefore, since the plurality of dielectric particles 22 and the conductive particles 25 can be fixed at desired positions, the ceramic capacitor 10 having excellent reliability can be manufactured. Further, in the second unevenness forming step, a part of each dielectric grain 22 and a part of the conductive grain 25 can be protruded from the interlayer insulating material 23 only by peeling off the resin film 113. Can be manufactured efficiently. Furthermore, it is not necessary to perform etching or the like when removing the resin film 113. Therefore, since the number of steps is reduced, the manufacturing cost of the ceramic capacitor 10 can be reduced.

  In addition, you may change embodiment of this invention as follows.

  In the above embodiment, a part of the plurality of dielectric grains 22 and a part of the conductive grains 25 protrude from both the first main surface 117 and the second main surface 118. However, a part of each dielectric particle 22 and a part of the conductive particle 25 may protrude from either the first main surface 117 or the second main surface 118, or the first main surface 117 and the second main surface 118 may be protruded. It is not necessary to project from the two main surfaces 118.

  In the above embodiment, the dielectric particles 22 and the conductive particles 25 are substantially spherical. However, the dielectric particles 22 and the conductive particles 25 may be aspherical (for example, substantially columnar as shown in FIG. 30). In this case, a part of the plurality of dielectric particles 22 and the conductive particles 25 may be protruded from one of the first main surface 117 and the second main surface 118, or the first main surface 117 and the second main surface 118. You may make it protrude in both the main surfaces 118 (FIG. 31). The shape of the dielectric particles 22 and the shape of the conductive particles 25 may be different from each other.

  -The mesh member 100 of the said embodiment has the some positioning part 101 arranged in the grid | lattice form along the plane direction of the mesh member 100, and the some dielectric particle 22 follows the plane direction of the mesh member 100. It was arranged in a grid. However, as shown in FIG. 32, the plurality of positioning portions 101 are arranged in a zigzag pattern along the plane direction of the mesh member 100, and the plurality of dielectric grains 22 are arranged in a zigzag pattern along the plane direction. You may do it. By doing so, the gap between the plurality of dielectric particles 22 becomes smaller, so that the volume ratio of the dielectric particles 22 becomes even larger than the volume ratio of the interlayer insulating material 23. Therefore, the capacitance of the ceramic capacitor 10 can be further increased.

  In the above embodiment, the mesh member 100 having a mesh smaller than the particle diameter of the plurality of dielectric particles 22 and the particle diameter of the conductive particles 25 is used as a jig used in the positioning step. However, a vacuum chuck 102 as shown in FIGS. 33 and 34 may be used as a jig. The vacuum chuck 102 includes a plurality of grain holding recesses 103 (positioning parts) that support the plurality of dielectric grains 22 and the conductive grains 25. The grain holding recesses 103 are arranged in a lattice shape along the support surface 104 (jig main surface). A vacuum pulling path 105 communicates with the particle holding recess 103, and the dielectric particles 22 and the conductive particles 25 are adsorbed and held in the particle holding recess 103 by performing vacuuming through the vacuum pulling path 105. The vacuum chuck 102 can be manufactured by a conventionally known semiconductor manufacturing process.

  The shape of the particle holding recess 103 is preferably set as appropriate in accordance with the shapes of the dielectric particles 22 and the conductive particles 25. For example, when the dielectric particles 22 and the conductive particles 25 are substantially spherical, the particle holding recess 103 may be formed in a mortar shape (see FIG. 33). In addition, when the dielectric particles 22 and the conductive particles 25 are substantially columnar, the particle holding recess 103 is preferably formed in a substantially U-shaped cross section (see FIG. 34).

  In the above embodiment, the mesh member 100 having the blocking portion 106 is used. After the plurality of dielectric particles 22 positioned in the positioning portion 101 of the mesh member 100 are transferred onto the adhesion layer 112, the adhesion layer 112 is used. In FIG. 2, the conductive particles 25 were transferred to the places where the dielectric particles 22 were not transferred. That is, the dielectric particles 22 were not transferred to the portions where the conductive particles 25 were transferred. However, the dielectric particles 22 may also be transferred to locations where the conductive particles 25 are transferred. In this case, for example, the mesh member 100 that does not have the blocking portion 106 is used. Then, after transferring the plurality of dielectric particles 22 positioned on the mesh member 100 onto the adhesion layer 112, a replacement step is performed in which a part of each transferred dielectric particle 22 is replaced with the conductive particles 25.

  In the above embodiment, the mesh member 100 is used only when the dielectric particles 22 are transferred, and the mesh member is not used when the conductive particles 25 are transferred. However, a mesh member may be used not only when transferring the dielectric particles 22 but also when transferring the conductive particles 25. Specifically, a first mesh member having a first closing portion is prepared, and a plurality of dielectric particles 22 positioned on the positioning portion 101 of the first mesh member are transferred onto the adhesion layer 112. In addition, a second mesh member having a second closing portion is prepared, and the conductive particles 25 positioned on the positioning portion 101 of the second mesh member are transferred to a location where the dielectric particles 22 are not transferred in the adhesion layer 112. .

  In the above embodiment, the first metal electrode layer 11 is formed in advance and then etched to divide the first metal electrode layer 11 into the dielectric grain side region 12 and the conductive grain side region 13. It was. However, a part of the first main surface 117 is masked with a tape or the like, and after plating is performed, the tape is peeled off, thereby dividing the first metal electrode into the dielectric grain side region 12 and the conductive grain side region 13. The layer 11 may be formed.

  Next, the technical ideas grasped by the embodiment described above are listed below.

  (1) A high dielectric constant material sheet having a first principal surface and a second principal surface, and comprising a dielectric layer composed of a plurality of dielectric particles, conductive particles, and an organic resin material, The dielectric grains and the conductive grains are arranged two-dimensionally and in a single layer along the planar direction of the dielectric layer, and the organic resin material fixes the plurality of dielectric grains and the conductive grains to each other. A high dielectric constant material sheet.

  (2) A jig having a structure in which a plurality of positioning portions are two-dimensionally arranged along the jig main surface is prepared, and a plurality of dielectric grains are held in the plurality of positioning portions, whereby the plurality of dielectrics A plurality of dielectric particles positioned on the jig by preparing a positioning step for arranging body particles two-dimensionally and in a single layer along the jig main surface and a carrier material having an adhesion layer; A transfer step of transferring a portion of the transferred plurality of dielectric particles to conductive particles, a plurality of dielectric particles transferred onto the attachment layer, and the conductive layer. A method of manufacturing a high dielectric constant material sheet, comprising: a step of fixing grains to each other with an organic resin material to form a dielectric layer.

  (3) preparing a mesh member having a plurality of meshes smaller than the particle size of the plurality of dielectric particles and the particle size of the conductive particles, and serving as a closed portion in which a part of the plurality of meshes is closed; The plurality of dielectric grains are arranged two-dimensionally and in a single layer along the plane direction of the mesh member by holding the plurality of dielectric grains in a portion of the plurality of meshes that is not the closed portion. A positioning step; a first transfer step of preparing a carrier material having an adhesion layer; and transferring the plurality of dielectric particles positioned on the mesh member onto the adhesion layer; and the plurality of the plurality of dielectric particles on the adhesion layer. A second transfer step of transferring the conductive particles to a portion where the dielectric particles are not transferred, and fixing the transferred plurality of dielectric particles and the conductive particles with an organic resin material to form a dielectric layer And characterized by including a process Method of manufacturing a conductivity material sheet.

  (4) preparing a first mesh member having a plurality of meshes smaller than the particle diameters of the plurality of dielectric particles and serving as a first closed portion in which a part of the plurality of meshes is closed; By holding the plurality of dielectric particles in a portion of the mesh that is not the first closed portion, the plurality of dielectric particles are arranged two-dimensionally and in a single layer along the plane direction of the mesh member Preparing a second mesh member having a first positioning step and a plurality of meshes smaller than the particle size of the conductive particles, and serving as a second closed portion in which a part of the plurality of meshes is closed; A second positioning step of arranging the conductive particles two-dimensionally and in a single layer along the plane direction of the mesh member by holding the conductive particles in a portion that is not the second closed portion of the mesh of A carrier material having an adhesion layer is prepared, and the first mesh A first transfer step of transferring the plurality of dielectric particles positioned on the member onto the adhesion layer; and the plurality of conductive particles positioned on the second mesh member on the adhesion layer. A second transfer step of transferring the dielectric particles to a portion where the dielectric particles are not transferred, and a fixing step of fixing the transferred dielectric particles and the conductive particles to each other with an organic resin material to form a dielectric layer. A method for producing a high dielectric constant material sheet, comprising:

  (5) A first dielectric layer having a first main surface and a second main surface and comprising a plurality of dielectric particles, conductive particles and an organic resin material, and a first layer formed on the first main surface. A metal layer and a second metal layer formed on the second main surface, wherein the plurality of dielectric grains and the conductive grains are two-dimensionally and single along the planar direction of the dielectric layer. The organic resin material is arranged in layers, the plurality of dielectric particles and the conductive particles are fixed to each other, and the first metal layer and the second metal layer are connected to the conductive particles. A wiring board embedded capacitor.

The schematic sectional drawing which shows the ceramic capacitor built-in wiring board of this invention. The schematic sectional drawing which shows the ceramic capacitor of this invention. The top view which shows the ceramic capacitor of this invention. Sectional drawing which shows a mesh member and dielectric material grain. The top view which shows a mesh member. The schematic sectional drawing for demonstrating the manufacturing method of 1st Embodiment. The schematic sectional drawing for demonstrating the manufacturing method of 1st Embodiment. The schematic sectional drawing for demonstrating the manufacturing method of 1st Embodiment. The schematic sectional drawing for demonstrating the manufacturing method of 1st Embodiment. The schematic sectional drawing for demonstrating the manufacturing method of 1st Embodiment. The schematic sectional drawing for demonstrating the manufacturing method of 1st Embodiment. The schematic sectional drawing for demonstrating the manufacturing method of 1st Embodiment. The schematic sectional drawing for demonstrating the manufacturing method of 1st Embodiment. The schematic sectional drawing for demonstrating the manufacturing method of 1st Embodiment. The schematic sectional drawing for demonstrating the manufacturing method of 1st Embodiment. The schematic sectional drawing for demonstrating the manufacturing method of 1st Embodiment. The schematic sectional drawing for demonstrating the manufacturing method of 1st Embodiment. The schematic sectional drawing for demonstrating the manufacturing method of 1st Embodiment. The schematic sectional drawing for demonstrating the manufacturing method of 1st Embodiment. The schematic sectional drawing for demonstrating the manufacturing method of 2nd Embodiment. The schematic sectional drawing for demonstrating the manufacturing method of 2nd Embodiment. The schematic sectional drawing for demonstrating the manufacturing method of 2nd Embodiment. The schematic sectional drawing for demonstrating the manufacturing method of 2nd Embodiment. The schematic sectional drawing for demonstrating the manufacturing method of 2nd Embodiment. The schematic sectional drawing for demonstrating the manufacturing method of 2nd Embodiment. The schematic sectional drawing for demonstrating the manufacturing method of 2nd Embodiment. The schematic sectional drawing for demonstrating the manufacturing method of 2nd Embodiment. The schematic sectional drawing for demonstrating the manufacturing method of 2nd Embodiment. The schematic sectional drawing for demonstrating the manufacturing method of 2nd Embodiment. The schematic sectional drawing which shows the ceramic capacitor of other embodiment. The schematic sectional drawing which shows the ceramic capacitor of other embodiment. The top view which shows the mesh member of other embodiment. The schematic sectional drawing which shows the vacuum chuck of other embodiment. The schematic sectional drawing which shows the vacuum chuck of other embodiment. The schematic sectional drawing which shows the capacitor of a prior art.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Ceramic capacitor 11 as a capacitor ... 1st metal electrode layer 20 as a metal layer ... High dielectric material sheet 21 ... Dielectric layer 22 ... Dielectric grain 23 ... Interlayer insulation material 25 as a fixing material and organic resin material ... Conductive grains 31 ... second metal electrode layer 71 as a metal layer ... wiring board 100 with a built-in ceramic capacitor as a wiring board ... mesh member 101 as a jig ... positioning part 102 ... vacuum chuck 103 as a jig ... as positioning part Grain holding recess 104 ... Support surface 111 as jig main surface ... Metal foil 112 as carrier material ... Adhesion layer 113 ... Resin film 114 as carrier material ... Adhesion layer 117 as adhesion layer ... First main surface 118 ... first 2 main surface

Claims (8)

A high dielectric constant material sheet having a first principal surface and a second principal surface, and comprising a dielectric layer composed of a plurality of dielectric grains, conductive grains, and a fixing material,
The plurality of dielectric grains and the conductive grains are arranged two-dimensionally and in a single layer along the planar direction of the dielectric layer, and the fixing material includes the plurality of dielectric grains and the conductive grains. A high dielectric constant material sheet characterized by being fixed.   2. The high dielectric constant material sheet according to claim 1, wherein a particle diameter of the plurality of dielectric particles and a particle diameter of the conductive particles are set to substantially equal values within a range of 10 μm to 50 μm.   3. A part of the plurality of dielectric grains and a part of the conductive grains are exposed on at least one of the first main surface and the second main surface. The high dielectric constant material sheet described in 1.   3. The high dielectric constant material sheet according to claim 1, wherein a part of the plurality of dielectric grains is exposed on both the first main surface and the second main surface. 4.   5. The high dielectric constant according to claim 1, wherein a metal layer is directly formed on at least one of the first main surface and the second main surface. 6. Material sheet.   The high dielectric constant material sheet according to any one of claims 1 to 5, wherein the high dielectric constant material sheet is a material for forming a capacitor.   A wiring board, wherein the high dielectric constant material sheet according to claim 1 is embedded. A jig having a structure in which a plurality of positioning portions are two-dimensionally arranged along the jig main surface is prepared, and the plurality of dielectric particles and conductive particles are held in the plurality of positioning portions, thereby the plurality of dielectrics. A positioning step of arranging body grains and conductive grains two-dimensionally and in a single layer along the jig main surface;
Preparing a carrier material having an adhesion layer, and transferring the plurality of dielectric particles and conductive particles positioned on the jig onto the adhesion layer;
A method for producing a high dielectric constant material sheet, comprising: a fixing step in which the transferred dielectric particles and the conductive particles are fixed to each other with an organic resin material to form a dielectric layer.

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