JP2007012692A - Substrate treatment equipment - Google Patents

Substrate treatment equipment Download PDF

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JP2007012692A
JP2007012692A JP2005188435A JP2005188435A JP2007012692A JP 2007012692 A JP2007012692 A JP 2007012692A JP 2005188435 A JP2005188435 A JP 2005188435A JP 2005188435 A JP2005188435 A JP 2005188435A JP 2007012692 A JP2007012692 A JP 2007012692A
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substrate
liquid
substrate surface
suction
opening
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JP4488965B2 (en
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Takahiro Kimura
貴弘 木村
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Dainippon Screen Manufacturing Co Ltd
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Dainippon Screen Manufacturing Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate treatment equipment in which liquid adhering to the surface of a substrate can be removed stably while preventing the scattering of mist. <P>SOLUTION: A substrate W is carried in the moving direction (+X) with the facing surface 33 of a suction head 31 opposing the surface WS of the substrate such that treatment liquid adhering to the surface WS of the substrate is located lower than the liquid LL. The treatment liquid partitioned below the upstream side 35 and sandwiched by the facing surface 33 and the surface WS of the substrate has a thickness defined depending on the interval G between the facing surface 33 and the surface WS of the substrate. The quantity of liquid held between the head body 32 and the substrate W is made constant and the liquid is sucked and removed through suction openings 61 and 62. On the other hand, treatment liquid partitioned above the upstream side 35 and scratched by the side face 34 is introduced to a suction opening 63 and sucked and removed therefrom. When a part of the treatment liquid cannot be sucked, it does not adhere again to the surface WS of the substrate but is discharged limitedly to the outside of the substrate. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

この発明は、液体が付着する基板表面から該液体を除去する基板処理装置に関する。なお、基板には半導体ウエハ、フォトマスク用ガラス基板、液晶表示用ガラス基板、プラズマ表示用ガラス基板、光ディスク用基板等が含まれる。   The present invention relates to a substrate processing apparatus that removes liquid from a substrate surface to which the liquid adheres. The substrate includes a semiconductor wafer, a photomask glass substrate, a liquid crystal display glass substrate, a plasma display glass substrate, an optical disk substrate, and the like.

従来、例えば液晶表示装置の製造工程においては、水平方向に敷設された搬送ローラによって基板を搬送しながら、搬送される基板表面に現像液、エッチング液、剥離液、洗浄液などの液層を形成することによって湿式処理が施される。これらの湿式処理が施された基板表面には湿式処理に使用された液体が付着しているため、液体が処理室から持ち出されることを防ぐため、基板表面に付着した液体を各湿式処理工程ごとに除去しておく必要がある。   Conventionally, for example, in the manufacturing process of a liquid crystal display device, a liquid layer such as a developing solution, an etching solution, a stripping solution, and a cleaning solution is formed on the surface of a substrate to be conveyed while the substrate is conveyed by a conveying roller laid horizontally. Thus, a wet process is performed. Since the liquid used in the wet process adheres to the substrate surface that has been subjected to these wet processes, the liquid adhered to the substrate surface is removed for each wet process step in order to prevent the liquid from being taken out of the process chamber. It is necessary to remove it.

このような基板表面に付着した液体を該基板表面から除去するものとして、基板表面に向かってエアナイフ等から窒素ガスなどのガスを噴出し、ガスの圧力で基板表面の液体を液切りする基板処理装置がある(特許文献1参照)。この特許文献1に記載の装置では、搬送ローラにより搬送される基板の両面に付着する剥離液を上下一対のエアナイフから基板の両面に対して高圧ガスを噴出することにより除去している。   Substrate processing in which a gas such as nitrogen gas is ejected from an air knife or the like toward the substrate surface, and the liquid on the substrate surface is drained by the pressure of the gas, as the liquid attached to the substrate surface is removed from the substrate surface. There exists an apparatus (refer patent document 1). In the apparatus described in Patent Document 1, the peeling liquid adhering to both surfaces of the substrate conveyed by the conveying roller is removed by ejecting high-pressure gas from the upper and lower pair of air knives to both surfaces of the substrate.

また、基板表面に付着する液体をノズルによって吸引することで除去する基板処理装置がある(特許文献2参照)。この特許文献2に記載の装置では、吸引ノズルの先端部が吸引口となっており、該吸引口を基板表面の直上に位置させた状態で吸引動作させながら基板の一端辺から他端辺に移動させることで、基板表面に付着する現像液を除去している。   In addition, there is a substrate processing apparatus that removes the liquid adhering to the substrate surface by sucking with a nozzle (see Patent Document 2). In the apparatus described in Patent Document 2, the tip of the suction nozzle is a suction port, and the suction port is positioned from directly above the substrate surface while performing a suction operation from one end of the substrate to the other end. The developer attached to the substrate surface is removed by the movement.

特開2004−146414号公報(図1)JP 2004-146414 A (FIG. 1) 特開平6−342782号公報(図1)Japanese Patent Laid-Open No. 6-342882 (FIG. 1)

しかしながら、特許文献1に記載の装置では、基板表面に付着する液体をガスの圧力によって吹き飛ばすため、ミスト(ミスト状の液体)の飛散が避けられず、飛散したミストが基板搬送方向の下流側において基板に再付着することによって処理の不均一やムラの原因となっていた。さらに、エアナイフによる液切りでは、液切りされた液体は基板搬送方向の上流側に吹き飛ばされるため、液切りされた液体を十分に回収することが容易ではなかった。   However, in the apparatus described in Patent Document 1, since the liquid adhering to the substrate surface is blown off by the gas pressure, the mist (mist-like liquid) is unavoidably scattered, and the scattered mist is downstream in the substrate transport direction. Re-adhering to the substrate caused non-uniform processing and unevenness. Further, in the liquid cutting with an air knife, the liquid that has been drained is blown off to the upstream side in the substrate transport direction, so that it has not been easy to sufficiently recover the liquid that has been drained.

また、特許文献2に記載の装置では、基板表面に付着する液体量が変動すると、液体量に応じて基板表面から液体を吸引することができず、その結果、基板表面から液体を十分に除去することができない場合があった。さらに、基板の処理内容によっては基板表面に液体を所定の厚みで残しながら基板表面から除去する場合もあるが、この場合に基板表面に付着する液体量が変動すると、基板表面に残留する液体の厚みが不均一となってしまう。このように特許文献2に記載の装置では、基板表面から液体を安定して除去することが困難となっていた。   Further, in the apparatus described in Patent Document 2, if the amount of liquid adhering to the substrate surface fluctuates, the liquid cannot be sucked from the substrate surface according to the liquid amount, and as a result, the liquid is sufficiently removed from the substrate surface. There was a case that could not be done. Furthermore, depending on the processing contents of the substrate, the liquid may be removed from the substrate surface while leaving the liquid with a predetermined thickness. In this case, if the amount of liquid adhering to the substrate surface fluctuates, the liquid remaining on the substrate surface may be changed. The thickness becomes non-uniform. Thus, in the apparatus described in Patent Document 2, it has been difficult to stably remove the liquid from the substrate surface.

この発明は上記課題に鑑みなされたものであり、ミストの飛散を防止しながら基板表面に付着する液体を安定して除去することのできる基板処理装置を提供することを目的とする。   The present invention has been made in view of the above problems, and an object of the present invention is to provide a substrate processing apparatus capable of stably removing liquid adhering to the substrate surface while preventing mist from scattering.

この発明は、液体が付着する基板の表面から該液体を除去する基板処理装置であって、基板表面に対向する対向面を有し、該対向面が基板表面に付着する液体の液面に対して下方側に位置するように基板表面から離間配置されたヘッド本体と、ヘッド本体を基板に対して所定の移動方向に相対移動させる駆動手段と、基板表面に付着する液体をヘッド本体より吸引して基板表面から除去する吸引手段とを備え、ヘッド本体は、対向面に開口され対向面と基板表面との間から液体を吸引する第1開口部と、対向面を規定する辺部のうち移動方向の上流側に位置する上流辺部に接続されるとともに該上流辺部から対向面に対して移動方向の上流側を臨みながら基板表面から離れる方向に延設された傾斜面と、該傾斜面に開口され傾斜面上の液体を吸引する第2開口部とをさらに有している。   The present invention relates to a substrate processing apparatus for removing a liquid from the surface of a substrate to which a liquid adheres, the substrate processing apparatus having a facing surface facing the substrate surface, and the facing surface against the liquid surface of the liquid adhered to the substrate surface. A head body spaced from the substrate surface so as to be positioned on the lower side, drive means for moving the head body relative to the substrate in a predetermined movement direction, and liquid adhering to the substrate surface is sucked from the head body. And a suction means for removing the liquid from the substrate surface. The head body is opened in the opposing surface and moves between a first opening that sucks liquid from between the opposing surface and the substrate surface, and a side that defines the opposing surface. An inclined surface which is connected to an upstream side located on the upstream side in the direction and extends from the upstream side in a direction away from the substrate surface while facing the upstream side in the moving direction with respect to the opposing surface, and the inclined surface The liquid on the inclined surface is opened Further includes a second opening that argument.

このように構成された発明では、ヘッド本体の対向面が基板表面に付着する液体の液面よりも下方側に位置するように基板表面から離間配置されるとともにヘッド本体が基板に対して所定の移動方向に相対移動する。これにより、基板表面に付着する液体はヘッド本体の上流辺部によって上下方向に仕切られる。そのため、上流辺部より下方に位置する液体は対向面と基板表面との間隙に応じて厚み(液体量)が所定量に規定されるとともに、所定の厚みに規定された液体が対向面に開口された第1開口部より吸引される。このため、基板表面に付着する液体量にかかわらず、ヘッド本体と基板とに挟まれる液体量を一定として確実に液体を吸引除去することができる。一方で、上流辺部より上方に位置する液体は、傾斜面によって掻き取られて傾斜面に開口された第2開口部に導かれ該第2開口部より吸引除去される。このとき、液体量、液体の種類や吸引量などの諸条件によっては、液体の一部が吸引されずに滞留する場合もあるが、対向面と基板表面との間は液密状態とされていることから、滞留する液体は基板表面に再付着することなく、基板表面から排出される。つまり、第1開口部より安定的に液体を吸引除去しながら、基板表面に付着する液体量に応じて第2開口部より液体を吸引除去するとともに、吸引しきれない場合に限定的に基板外に排出している。したがって、基板表面に付着する液体量にかかわらず、基板表面に付着する液体を安定して除去することができる。   In the invention configured as described above, the head main body is spaced apart from the substrate surface so that the facing surface of the head main body is located below the liquid level of the liquid adhering to the substrate surface, and the head main body is fixed to the substrate. Move relative to the direction of movement. Thereby, the liquid adhering to the substrate surface is partitioned in the vertical direction by the upstream side portion of the head body. For this reason, the liquid located below the upstream side is defined to have a predetermined thickness (liquid amount) according to the gap between the opposing surface and the substrate surface, and the liquid having the predetermined thickness is opened to the opposing surface. Suction is performed through the first opening. Therefore, regardless of the amount of liquid adhering to the substrate surface, the liquid can be reliably removed by suction with the amount of liquid sandwiched between the head body and the substrate being constant. On the other hand, the liquid located above the upstream side portion is scraped off by the inclined surface, guided to the second opening portion opened in the inclined surface, and sucked and removed from the second opening portion. At this time, depending on various conditions such as the amount of liquid, the type of liquid, and the amount of suction, a part of the liquid may stay without being sucked, but the space between the opposing surface and the substrate surface is in a liquid-tight state. Therefore, the staying liquid is discharged from the substrate surface without reattaching to the substrate surface. That is, while the liquid is stably sucked and removed from the first opening, the liquid is sucked and removed from the second opening according to the amount of liquid adhering to the substrate surface, and the outside of the substrate is limited to the case where the liquid cannot be sucked. Is discharged. Therefore, the liquid adhering to the substrate surface can be stably removed regardless of the amount of liquid adhering to the substrate surface.

また、上記したようにガスの吹き付けによって基板表面に付着する液体を除去している訳ではないことから、液体がミスト(ミスト状の液体)となって飛散することがない。したがって、ミストの再付着を防止して、処理の均一化を図ることができる。さらに、対向面に開口された第1開口部と傾斜面に開口された第2開口部とにより吸引することで、液体を散逸させることなく、効率良く回収することができる。   Further, as described above, since the liquid adhering to the substrate surface is not removed by gas blowing, the liquid does not scatter as a mist (mist-like liquid). Therefore, it is possible to prevent the mist from reattaching and to make the process uniform. Furthermore, the liquid can be efficiently recovered without being dissipated by sucking with the first opening opened on the opposing surface and the second opening opened on the inclined surface.

ここで、基板表面に対して平行でかつ移動方向に対して直交する方向を幅方向としたとき、ヘッド本体において、対向面および傾斜面の幅方向の幅を少なくとも基板の幅方向の幅以上に形成するとともに、第1開口部および第2開口部をそれぞれ幅方向に延びるスリットを形成するように構成するのが好ましい。この構成によれば、ヘッド本体を基板に対して相対移動させることにより、上記した作用効果を基板の幅方向の全体にわたって得つつ、基板表面全体から一度に液体を除去することができ、スループットを向上させることができる。   Here, when the direction parallel to the substrate surface and perpendicular to the moving direction is the width direction, in the head body, the width in the width direction of the facing surface and the inclined surface is at least greater than the width in the width direction of the substrate. It is preferable to form the first opening and the second opening so as to form slits extending in the width direction. According to this configuration, by moving the head main body relative to the substrate, it is possible to remove the liquid from the entire surface of the substrate at a time while obtaining the above-described effects over the entire width direction of the substrate. Can be improved.

また、第1開口部は、移動方向に沿って互いに所定の間隔をあけながら対向面に開口された複数の吸引口を有するように構成してもよい。例えば、移動方向に沿って吸引口を2段にして構成するようにしてもよい。この構成によれば、ヘッド本体と基板表面とに挟まれた液体をより確実に吸引除去することができる。しかも、移動方向上流側に位置する吸引口(上流側吸引口)より液体が吸引除去される結果、移動方向下流側に位置する吸引口(下流側吸引口)より吸引する液体量は、上流側吸引口により吸引する液体量に比較して確実に減少している。したがって、下流側吸引口より吸引する液体の厚みは、対向面と基板表面との間隙よりも確実に小さくなっており、より安定して基板表面から液体を吸引除去することができる。   Moreover, you may comprise a 1st opening part so that it may have a some suction opening opened to the opposing surface, keeping predetermined space | interval mutually along the moving direction. For example, the suction port may be configured in two stages along the moving direction. According to this configuration, the liquid sandwiched between the head body and the substrate surface can be sucked and removed more reliably. Moreover, as a result of the liquid being sucked and removed from the suction port (upstream suction port) located upstream in the movement direction, the amount of liquid sucked from the suction port (downstream suction port) located downstream in the movement direction is the upstream side. The amount is surely reduced as compared with the amount of liquid sucked by the suction port. Therefore, the thickness of the liquid sucked from the downstream suction port is surely smaller than the gap between the facing surface and the substrate surface, and the liquid can be sucked and removed from the substrate surface more stably.

さらに、このように移動方向に沿って吸引口を多段に構成することにより、基板表面から高効率で液体を回収・再利用することができる。一方で、基板表面から液体を確実に吸引することが可能となることから、ヘッド本体と基板とを高速に相対移動させながら液体を除去することができる。その結果、装置のスループットを向上させることができる。   Furthermore, by configuring the suction ports in multiple stages along the moving direction in this way, it is possible to recover and reuse the liquid from the substrate surface with high efficiency. On the other hand, since the liquid can be reliably sucked from the substrate surface, the liquid can be removed while relatively moving the head body and the substrate at a high speed. As a result, the throughput of the apparatus can be improved.

また、第2開口部は、傾斜面に上流辺部に近接して設けるのが好ましい。このように構成することで、第2開口部が液面下に位置され外部雰囲気に露出する機会が低減される。これにより、外部雰囲気であるエア等の気体の巻き込みを抑制して、液体の吸引効率の低下を防止することができる。   In addition, the second opening is preferably provided on the inclined surface in the vicinity of the upstream side. By comprising in this way, the opportunity which a 2nd opening part is located under a liquid level and exposed to external atmosphere is reduced. Thereby, entrainment of gas, such as air which is external atmosphere, can be suppressed, and the fall of the suction efficiency of a liquid can be prevented.

また、ヘッド本体の上流側端部の形状については、対向面と傾斜面とが鋭角をなすように構成するのが好ましい。このように構成することで、上流辺部によって上方側に仕切られた液体を確実に傾斜面に担持させて、ヘッド本体の上流側端部に液体が滞留するのを防止することができる。さらに、傾斜面上の液体を確実に第2開口部に導いて第2開口部より吸引させることができる。   In addition, the shape of the upstream end portion of the head body is preferably configured so that the opposing surface and the inclined surface form an acute angle. With this configuration, the liquid partitioned upward by the upstream side portion can be reliably supported on the inclined surface, and the liquid can be prevented from staying at the upstream end portion of the head body. Furthermore, the liquid on the inclined surface can be reliably guided to the second opening and sucked from the second opening.

また、ヘッド本体を駆動して基板表面に対するヘッド本体の高さ位置を調整する位置調整手段を設けて、位置調整手段を制御してヘッド本体の対向面と基板表面との間隙を調整し、基板表面と対向面とに挟まれる液体の厚みを制御するようにしてもよい。この構成によれば、基板表面に付着する液体のうち基板表面と対向面とに挟まれる液体量と傾斜面によって掻き取られる液体量との配分比率を自在にコントロールすることが可能となる。このため、基板表面に付着する液体の種類(例えば液体の粘性)、ヘッド本体と基板との相対移動速度、その他のプロセス条件に応じて、第1および第2開口部からの最適な吸引状態を実現して基板表面から液体を良好に除去することができる。   Further, a position adjusting means for adjusting the height position of the head main body with respect to the substrate surface by driving the head main body is provided, and the position adjusting means is controlled to adjust the gap between the facing surface of the head main body and the substrate surface. The thickness of the liquid sandwiched between the surface and the opposing surface may be controlled. According to this configuration, it is possible to freely control the distribution ratio between the amount of liquid adhering to the substrate surface and the amount of liquid sandwiched between the substrate surface and the facing surface and the amount of liquid scraped off by the inclined surface. For this reason, the optimum suction state from the first and second openings is selected according to the type of liquid adhering to the substrate surface (for example, the viscosity of the liquid), the relative movement speed between the head body and the substrate, and other process conditions. The liquid can be satisfactorily removed from the substrate surface.

この発明によれば、ヘッド本体の対向面が基板表面に付着する液体の液面よりも下方側に位置するように基板表面から離間配置されるとともにヘッド本体が基板に対して所定の移動方向に相対移動される。このため、ヘッド本体の上流辺部により下方側に仕切られ、対向面と基板表面とに挟まれた液体は対向面と基板表面との間隙に応じて厚みが規定されることで、液体量が一定とされ第1開口部により確実に液体が吸引除去される。一方で、ヘッド本体の上流辺部により上方側に仕切られ、傾斜面によって掻き取られた液体は第2開口部に導かれ吸引除去されるとともに、その一部が吸引しきれない場合に基板表面に再付着することなく限定的に基板外に排出される。その結果、基板表面に付着する液体量にかかわらず、基板表面に付着する液体を安定して除去することができる。しかも、ガスの吹き付けによって液体を除去している訳ではないことから、液体がミストとなって飛散することがない。したがって、ミストの再付着を防止して、処理の均一化を図ることができる。   According to the present invention, the head body is disposed away from the substrate surface so that the facing surface of the head body is located below the liquid level of the liquid adhering to the substrate surface, and the head body is in a predetermined movement direction with respect to the substrate. It is moved relative. For this reason, the liquid that is partitioned downward by the upstream side of the head body and sandwiched between the facing surface and the substrate surface is regulated in accordance with the gap between the facing surface and the substrate surface. The liquid is surely removed by suction through the first opening. On the other hand, the liquid that is partitioned upward by the upstream side portion of the head body and scraped off by the inclined surface is guided to the second opening and is removed by suction, and the substrate surface is not fully sucked. It is discharged out of the substrate without being attached again. As a result, the liquid adhering to the substrate surface can be stably removed regardless of the amount of liquid adhering to the substrate surface. Moreover, since the liquid is not removed by gas blowing, the liquid does not scatter as a mist. Therefore, it is possible to prevent the mist from reattaching and to make the process uniform.

<基板処理装置の全体構成>
図1は、この発明にかかる基板処理装置の一実施形態を示す側断面図である。また、図2は図1の基板処理装置の制御構成を示すブロック図である。この基板処理装置は基板W(具体的には、液晶表示装置用の矩形ガラス基板)を水平搬送しながらエッチング液などの処理液(本発明の「液体」に相当)によって基板Wに対してエッチング処理を行うものであり、前工程より基板Wを受け入れる搬入部10と、基板Wにエッチング処理を施す処理部20と、基板Wの表面WSに残存した処理液を除去する液切り部30とが一体に形成されている。また、処理液を貯留する受槽40が設けられている。
<Overall configuration of substrate processing apparatus>
FIG. 1 is a side sectional view showing an embodiment of a substrate processing apparatus according to the present invention. FIG. 2 is a block diagram showing a control configuration of the substrate processing apparatus of FIG. This substrate processing apparatus etches the substrate W with a processing liquid such as an etching liquid (corresponding to “liquid” in the present invention) while horizontally transporting the substrate W (specifically, a rectangular glass substrate for a liquid crystal display device). A carry-in unit 10 that receives the substrate W from the previous process, a processing unit 20 that performs an etching process on the substrate W, and a liquid draining unit 30 that removes the processing liquid remaining on the surface WS of the substrate W. It is integrally formed. Moreover, the receiving tank 40 which stores a process liquid is provided.

一体に形成された各構成部10,20,30の槽内部には、複数の搬送ローラ1が水平方向Xに列設されており、各構成部10,20,30を横断する水平搬送路を形成している。そして、装置全体を制御する制御部50(制御手段)からの制御指令に応じてローラ駆動部2が本発明の「駆動手段」として搬送ローラ1の一部(あるいは全て)を回転させることで基板Wを(+X)方向に直線的に搬送する。このように、この実施形態では、水平方向(+X)が本発明の「所定の移動方向」に相当しており、以下の説明においては、水平方向(+X)を単に「移動方向」と称する。複数の搬送ローラ1は水平方向Xと略直交する方向に配設された支持軸(図示せず)に軸支され、基板Wをほぼ水平姿勢で支持して搬送する。   A plurality of conveying rollers 1 are arranged in the horizontal direction X in the tank of each of the component parts 10, 20, 30 formed integrally, and a horizontal conveyance path crossing each component part 10, 20, 30 is formed. Forming. The roller drive unit 2 rotates a part (or all) of the transport roller 1 as the “drive unit” of the present invention in accordance with a control command from the control unit 50 (control unit) that controls the entire apparatus. W is conveyed linearly in the (+ X) direction. Thus, in this embodiment, the horizontal direction (+ X) corresponds to the “predetermined movement direction” of the present invention, and in the following description, the horizontal direction (+ X) is simply referred to as the “movement direction”. The plurality of transport rollers 1 are supported by a support shaft (not shown) disposed in a direction substantially perpendicular to the horizontal direction X, and support and transport the substrate W in a substantially horizontal posture.

さらに、各構成部10,20,30の槽壁には、搬送路上を搬送される基板Wが通過できるようにそれぞれ透孔3a,3b,3c,3dが設けられている。また、処理部20の槽壁に設けられた透孔3b,3cには各々、処理液の流出を防ぐための扉4a,4bが設けられており、制御部50からの動作指令に応じて開閉される。   Further, through holes 3a, 3b, 3c, and 3d are provided in the tank walls of the respective components 10, 20, and 30 so that the substrate W that is transported on the transport path can pass therethrough. In addition, doors 4a and 4b are provided in the through holes 3b and 3c provided in the tank wall of the processing unit 20 to prevent the processing liquid from flowing out, and can be opened and closed according to an operation command from the control unit 50. Is done.

処理部20は、その内部が処理液を貯留可能な処理槽を構成しており、基板Wにエッチング処理を施す際には、搬送路上を搬送される基板Wを浸漬させる程に処理部20の槽内に処理液が貯留される。処理部20は、基板Wの搬送路を上下から挟み込むように、その内部に上下に分かれてそれぞれ水平方向Xに沿って配設された複数のノズル21,22を備えている。これらのノズル21,22は受槽40と接続されており、受槽40から送液される処理液を基板Wに供給する。   The processing unit 20 constitutes a processing tank in which the processing liquid can be stored. When the etching process is performed on the substrate W, the processing unit 20 is immersed to the extent that the substrate W transported on the transport path is immersed. The processing liquid is stored in the tank. The processing unit 20 includes a plurality of nozzles 21 and 22 that are divided into upper and lower portions and arranged along the horizontal direction X so as to sandwich the transport path of the substrate W from above and below. These nozzles 21 and 22 are connected to the receiving tank 40, and supply the processing liquid sent from the receiving tank 40 to the substrate W.

液切り部30は、基板Wの表面WSに近接しながら対向可能な吸引ヘッド31を備えている。この吸引ヘッド31は移動方向において固定して配置されている。吸引ヘッド31は排液ポンプ5aが介挿された回収管41によって受槽40と連通されている。これにより、制御部50が排液ポンプ5aを作動させることで吸引ヘッド31から基板表面WSに付着する処理液を吸引して受槽40に回収することが可能となっている。また、吸引ヘッド31にはアクチュエータ7が連結されており、制御部50からの動作指令に応じてアクチュエータ7が作動することで基板表面WSからの吸引ヘッド31の高さ位置を調整して、吸引ヘッド31と基板表面WSとの間隙を制御することが可能となっている。このように、この実施形態では、排液ポンプ5aが本発明の「吸引手段」として、アクチュエータ7が本発明の「位置調整手段」として機能している。なお、吸引ヘッド31の構成および動作については後で詳述する。   The liquid draining unit 30 includes a suction head 31 that can face the surface W of the substrate W while being close to the surface. The suction head 31 is fixedly arranged in the moving direction. The suction head 31 is communicated with the receiving tank 40 by a recovery pipe 41 in which a drainage pump 5a is inserted. As a result, the control unit 50 operates the drainage pump 5 a to suck the processing liquid adhering to the substrate surface WS from the suction head 31 and collect it in the receiving tank 40. Further, the actuator 7 is connected to the suction head 31, and the height position of the suction head 31 from the substrate surface WS is adjusted by operating the actuator 7 in accordance with an operation command from the control unit 50, and suction is performed. It is possible to control the gap between the head 31 and the substrate surface WS. Thus, in this embodiment, the drainage pump 5a functions as the “suction unit” of the present invention, and the actuator 7 functions as the “position adjusting unit” of the present invention. The configuration and operation of the suction head 31 will be described in detail later.

受槽40は、その内部に処理液を貯留しており、送液ポンプ5bが介挿された送液管42によってノズル21,22と連通されている。詳しくは、受槽40を起点として送液ポンプ5bを介挿した送液管42は、管路途中からノズル21,22に向けてそれぞれ分岐しており、これら分岐管42a,42bには開閉弁43a,43bが各々介挿されている。これにより、制御部50が送液ポンプ5bを作動させるとともに開閉弁43a,43bを開閉制御することで各ノズル21,22から独立して処理部20に処理液を噴出することが可能となっている。   The receiving tank 40 stores the processing liquid therein, and communicates with the nozzles 21 and 22 through a liquid feeding pipe 42 in which a liquid feeding pump 5b is inserted. Specifically, the liquid supply pipe 42 inserted from the receiving tank 40 through the liquid supply pump 5b is branched from the middle of the pipe toward the nozzles 21 and 22, and the branch pipes 42a and 42b include an on-off valve 43a. , 43b are respectively inserted. As a result, the control unit 50 activates the liquid feed pump 5b and controls the opening / closing valves 43a and 43b so that the processing liquid can be ejected from the nozzles 21 and 22 to the processing unit 20 independently. Yes.

また、各構成部10,20,30は、それぞれ回収管44a,44b,44cを介して受槽40と連通されている。処理部20に接続された回収管44bには開閉弁45が介挿されており、開閉弁45を開とすることで処理部20に貯留されている処理液を排出することが可能となっている。   Moreover, each component 10, 20, and 30 is connected with the receiving tank 40 via the collection pipes 44a, 44b, and 44c, respectively. An opening / closing valve 45 is inserted in the collection pipe 44b connected to the processing unit 20, and the processing liquid stored in the processing unit 20 can be discharged by opening the opening / closing valve 45. Yes.

次に基板処理装置の動作について説明する。基板Wは、搬送ローラ1によって搬送されて、搬入部10、処理部20、液切り部30を順次通過しながら各処理が施される。なお、扉4a,4b、開閉弁43a,43b,45はすべて閉じられた状態とされている。   Next, the operation of the substrate processing apparatus will be described. The substrate W is transported by the transport roller 1 and subjected to each process while sequentially passing through the carry-in unit 10, the processing unit 20, and the liquid draining unit 30. The doors 4a and 4b and the on-off valves 43a, 43b and 45 are all closed.

先ず、透孔3aから搬入部10に基板Wが搬入されると、扉4aが一時的に開放されることで基板Wは透孔3bを通過して処理部20に搬入される。このとき、処理部20に貯留される処理液の液面の高さ位置は透孔3bよりも低い位置とされている。そして、基板Wが処理部20に搬入され扉4aが閉鎖されると、ノズル21から処理部20に処理液が供給され、基板Wを浸漬させる程に処理部20の槽内に処理液が貯留される。これにより、透孔3bから処理部20の槽内の処理液が流出するのが防止される。   First, when the substrate W is carried into the carry-in unit 10 from the through-hole 3a, the door 4a is temporarily opened, so that the substrate W passes through the through-hole 3b and is carried into the processing unit 20. At this time, the height position of the liquid level of the processing liquid stored in the processing unit 20 is set to a position lower than the through hole 3b. When the substrate W is carried into the processing unit 20 and the door 4a is closed, the processing liquid is supplied from the nozzle 21 to the processing unit 20, and the processing liquid is stored in the tank of the processing unit 20 as the substrate W is immersed. Is done. Thereby, it is prevented that the process liquid in the tank of the process part 20 flows out from the through-hole 3b.

但し、透孔3bの開口面積は基板Wの通過に支障がない範囲で小さくされており、また処理液の液面と透孔3bとの高低差は比較的小さいものとされている。そのため、基板Wを浸漬させる程に処理部20に処理液を貯留した状態で扉4aを一時的に開放することも可能である。この場合、透孔4bからの処理液の流出量は限定的であり、しかも流出した処理液は回収管44aを介して受槽40に回収される。   However, the opening area of the through-hole 3b is made small as long as there is no obstacle to the passage of the substrate W, and the height difference between the liquid surface of the processing liquid and the through-hole 3b is relatively small. Therefore, it is possible to temporarily open the door 4a in a state where the processing liquid is stored in the processing unit 20 as the substrate W is immersed. In this case, the outflow amount of the processing liquid from the through-hole 4b is limited, and the outflowing processing liquid is recovered in the receiving tank 40 through the recovery pipe 44a.

処理部20に搬入された基板Wは処理液によって浸されながら所定時間搬送路に沿って往復運動を行うことによって基板Wにエッチング処理が施される。なお、浸潰処理に変えて、または加えて、ノズル22から処理液を基板Wの表面WSに直接に供給することによってエッチング処理を行うようにしてもよい。   The substrate W carried into the processing unit 20 is subjected to an etching process by reciprocating along the transport path for a predetermined time while being immersed in the processing liquid. Note that the etching process may be performed by directly supplying the processing liquid from the nozzle 22 to the surface WS of the substrate W instead of or in addition to the immersing process.

処理部20で所定のエッチング処理を施された基板Wは、扉4bが開放されることで透孔3cを通過して液切り部30に搬入される。このとき、扉4bが開放される前に開閉弁45を開くことによって基板Wが処理液から露出する程度に処理液が受槽40に回収される。この場合においても、入口側の透孔3bの場合と同様の理由で、処理液を受槽40に回収することなく扉4bを開放してもよい。なお、透孔3b,3cより溢流した処理液は、搬入部10および液切り部30の底部から、回収管44a,44cを介して受槽40に還流されることにより循環利用される。   The substrate W that has been subjected to the predetermined etching process in the processing unit 20 is carried into the liquid draining unit 30 through the through hole 3c when the door 4b is opened. At this time, the processing liquid is collected in the receiving tank 40 to such an extent that the substrate W is exposed from the processing liquid by opening the on-off valve 45 before the door 4b is opened. Also in this case, the door 4b may be opened without collecting the processing liquid in the receiving tank 40 for the same reason as in the case of the through hole 3b on the inlet side. Note that the processing liquid overflowing from the through holes 3b and 3c is circulated and used by being returned to the receiving tank 40 through the recovery pipes 44a and 44c from the bottoms of the carry-in unit 10 and the liquid draining unit 30.

そして、基板Wが液切り部30に搬入され扉4bが閉鎖されると、基板Wに対して所定の液切り処理が実行される。なお、液切り部30における液切り処理においては後で詳述する。こうして、液切り処理が実行されると、基板Wは透孔3dから搬出される。   Then, when the substrate W is carried into the liquid draining unit 30 and the door 4b is closed, a predetermined liquid draining process is performed on the substrate W. The liquid draining process in the liquid draining unit 30 will be described in detail later. Thus, when the liquid draining process is executed, the substrate W is unloaded from the through hole 3d.

<吸引ヘッド>
次に、液切り部30に装備された吸引ヘッド31の構成および動作について図3および図4を参照しつつ詳述する。図3は、図1の基板処理装置の液切り部の構成を示す斜視図である。さらに、図4は、図1の基板処理装置の液切り部に装備された吸引ヘッドの断面図である。吸引ヘッド31はヘッド本体32を備え、ヘッド本体32が搬送路上を搬送されてくる基板Wの表面WSに近接しながら対向配置されている。このヘッド本体32は、図4に示すように、垂直断面形状が略台形となって移動方向に直交する方向に延びる柱体であり、その一側面(下面)33が基板表面WSと平行して対向しながら面状に拡がる対向面となっている。また、他の側面34が移動方向の上流側(−X)で、かつ上方を向いた面となっている。詳しくは、側面34が対向面33を規定する辺部のうち移動方向の上流側(−X)に位置する上流辺部35と接続されるとともに該上流辺部35から移動方向の上流側(−X)を臨みながら基板表面WSから離れる方向に傾斜して延設されており、本発明の「傾斜面」に相当している。ヘッド本体32の上流側端部では、対向面33と側面34とが鋭角θをなしている。例えば対向面33と側面34とがなす角θは、15度〜30度とされる。
<Suction head>
Next, the configuration and operation of the suction head 31 provided in the liquid draining unit 30 will be described in detail with reference to FIGS. 3 and 4. FIG. 3 is a perspective view showing a configuration of a liquid draining part of the substrate processing apparatus of FIG. Further, FIG. 4 is a cross-sectional view of the suction head provided in the liquid draining part of the substrate processing apparatus of FIG. The suction head 31 includes a head main body 32, and the head main body 32 is disposed so as to face the surface WS of the substrate W being transported on the transport path. As shown in FIG. 4, the head main body 32 is a columnar body having a substantially trapezoidal vertical cross section and extending in a direction perpendicular to the moving direction, and one side surface (lower surface) 33 thereof is parallel to the substrate surface WS. It is a facing surface that spreads in a planar shape while facing. Further, the other side surface 34 is an upstream side (−X) in the movement direction and faces upward. Specifically, the side surface 34 is connected to the upstream side portion 35 positioned on the upstream side (−X) in the moving direction among the side portions that define the facing surface 33, and from the upstream side portion 35 to the upstream side in the moving direction (− Inclined in a direction away from the substrate surface WS while facing X), and corresponds to the “inclined surface” of the present invention. At the upstream end of the head body 32, the facing surface 33 and the side surface 34 form an acute angle θ. For example, the angle θ formed by the facing surface 33 and the side surface 34 is 15 degrees to 30 degrees.

そして、ヘッド本体32の対向面33が基板表面WSに付着する処理液の液面LLに対して下方側に位置するように基板表面WSから僅かに離間するように配置されることで、処理液がヘッド本体32の上流辺部35によって上下方向(Z方向)に仕切られる。これにより、上流辺部35より下方に位置する処理液は対向面33と基板表面WSとで挟まれた空間SPに入り込んで液密状態とされる一方、上流辺部35より上方に位置する処理液が側面34によって掻き取られる。なお、基板表面WSに対して平行でかつ移動方向に直交する方向(Y方向;本発明の「幅方向」に相当)における、これら対向面33と側面34の幅W1は基板WのY方向の幅W2以上の大きさで形成されており、基板Wが搬送路に沿って搬送されることで、吸引ヘッド31により基板表面全体を処理することが可能となっている。   Then, the processing liquid is disposed by being slightly spaced from the substrate surface WS so that the facing surface 33 of the head body 32 is positioned below the liquid level LL of the processing liquid adhering to the substrate surface WS. Is partitioned in the vertical direction (Z direction) by the upstream side portion 35 of the head body 32. As a result, the processing liquid positioned below the upstream side portion 35 enters the space SP sandwiched between the facing surface 33 and the substrate surface WS to be in a liquid-tight state, while the processing solution positioned above the upstream side portion 35. Liquid is scraped off by the side surfaces 34. The width W1 of the facing surface 33 and the side surface 34 in the direction parallel to the substrate surface WS and perpendicular to the moving direction (Y direction; corresponding to the “width direction” of the present invention) is the Y direction of the substrate W. The substrate W is formed with a size equal to or larger than the width W2, and the entire surface of the substrate can be processed by the suction head 31 when the substrate W is transported along the transport path.

ヘッド本体32の上面には、つまり側面34の下流側に隣接する側面には1本または複数本(この実施形態では2本)の吸引用ポート36が取り付けられている。これらの吸引用ポート36はヘッド本体32の内部に設けられたマニホールド37に連通されている。また、対向面33には移動方向に並んで、Y方向にスリット状に延びる2つの吸引口61,62(本発明の「第1開口部」に相当)が互いに所定の間隔をあけながら開口されており、これら吸引口61,62がマニホールド37に連通されている。一方で、側面34には上流辺部35に近接して、移動方向と直交する方向(Y方向)にスリット状に延びる吸引口63(本発明の「第2開口部」に相当)が開口されており、吸引口63がマニホールド37に連通されている。このため、制御部50からの動作指令に応じて排液ポンプ5aが作動することで各吸引口61〜63から処理液を吸引して吸引用ポート36を介して受槽40に回収することが可能となっている。なお、この実施形態では、ヘッド本体32の上面から上方(Z方向)に処理液を回収しているが、ヘッド本体32の側面から側方(Y方向)に処理液を回収するように構成してもよい。   One or a plurality of (two in this embodiment) suction ports 36 are attached to the upper surface of the head body 32, that is, on the side surface adjacent to the downstream side of the side surface 34. These suction ports 36 are communicated with a manifold 37 provided inside the head body 32. In addition, two suction ports 61 and 62 (corresponding to the “first opening” of the present invention) that are aligned in the movement direction and extend in a slit shape in the Y direction are opened on the facing surface 33 with a predetermined interval therebetween. These suction ports 61 and 62 communicate with the manifold 37. On the other hand, a suction port 63 (corresponding to the “second opening” of the present invention) that opens in a slit shape in the direction orthogonal to the moving direction (Y direction) is opened on the side surface 34 in the vicinity of the upstream side portion 35. The suction port 63 communicates with the manifold 37. For this reason, the drainage pump 5a is operated according to the operation command from the control unit 50, so that the processing liquid can be sucked from the suction ports 61 to 63 and collected in the receiving tank 40 via the suction port 36. It has become. In this embodiment, the processing liquid is collected upward (Z direction) from the upper surface of the head main body 32. However, the processing liquid is collected from the side surface of the head main body 32 to the side (Y direction). May be.

吸引口61,62は上流辺部35から下流側(+X)に離れた位置に対向面33に開口されている。これにより、上流辺部35より下方側に仕切られ対向面33と基板表面WSとに挟まれた処理液は対向面33と基板表面WSとの間隙Gに応じて厚み(液体量)が所定量に規定された上で、吸引口61,62より吸引除去される。一方、吸引口63は上流辺部35に近接した位置に側面34に開口されている。具体的には、上流辺部35から側面34に沿って吸引口63(吸引口63の移動方向下流側の開口端)までの距離をDとした場合に、下記の不等式(1)を満足するように吸引口63を設けることが好ましい。ここで、THは液切り処理前の基板表面WSに付着する液体の厚みを、Gは対向面33と基板表面WSとの間隙を、θは対向面33と側面34とがなす角を表す。
Dsinθ<TH−G・・・・・・(1)
The suction ports 61 and 62 are opened on the facing surface 33 at positions away from the upstream side 35 to the downstream side (+ X). As a result, the processing liquid partitioned below the upstream side 35 and sandwiched between the facing surface 33 and the substrate surface WS has a predetermined thickness (liquid amount) according to the gap G between the facing surface 33 and the substrate surface WS. And then removed by suction from the suction ports 61 and 62. On the other hand, the suction port 63 is opened on the side surface 34 at a position close to the upstream side portion 35. Specifically, the following inequality (1) is satisfied, where D is the distance from the upstream side 35 to the suction port 63 (opening end on the downstream side in the movement direction of the suction port 63) along the side surface 34. It is preferable to provide the suction port 63 as described above. Here, TH represents the thickness of the liquid adhering to the substrate surface WS before the liquid draining process, G represents the gap between the facing surface 33 and the substrate surface WS, and θ represents the angle formed by the facing surface 33 and the side surface 34.
Dsinθ <TH-G (1)

このように構成することで、吸引口63が処理液の液面LLより下方に位置することとなり、吸引口63が処理液中に埋もれることとなる。これにより、外部雰囲気であるエアの入り込みを抑制して、除去対象である処理液の吸引効率の低下を防止することができる。   With this configuration, the suction port 63 is positioned below the processing liquid level LL, and the suction port 63 is buried in the processing liquid. Thereby, it is possible to suppress the entry of air that is an external atmosphere, and to prevent a reduction in the suction efficiency of the treatment liquid that is a removal target.

次に、上記のように構成された吸引ヘッド31の動作について説明する。処理部20において処理液中に浸漬されエッチング処理を受けた基板Wの表面WSには多量の処理液が付着している。そして、搬送ローラ1によって基板Wが液切り部30に搬入されると、制御部50は排液ポンプ5aを作動させる。また、制御部50は処理液の種類(例えば処理液の粘性)、基板Wの搬送速度などのプロセス条件に応じて、アクチュエータ7を予め作動させることで基板表面WSからの吸引ヘッド31の高さ位置を調整しておく。これにより、対向面33と基板表面WSとの間隙Gが調整され、基板表面WSと対向面33とに挟まれる処理液の厚みが間隙Gに制御される。その結果、基板表面WSに付着する処理液(厚みTH)のうち基板表面WSと対向面33とに挟まれる処理液の液量と側面34によって掻き取られる処理液の液量との配分比率がコントロールされ、プロセス条件に応じて各吸引口61〜63からの最適な吸引状態を実現できる。この場合、液切り処理の内容を規定する処理レシピ、対向面33と基板表面WSとの間隙Gおよび各種プロセス条件とを相互に関連付けたジョブデータを複数個、制御部50に記憶させておき、処理内容に応じて処理レシピに対応するジョブデータを制御部50から読み出し、吸引ヘッド31を移動させて高さ位置を制御するようにしてもよい。   Next, the operation of the suction head 31 configured as described above will be described. A large amount of the processing liquid is attached to the surface WS of the substrate W that has been immersed in the processing liquid and subjected to the etching process in the processing unit 20. And when the board | substrate W is carried in into the liquid draining part 30 by the conveyance roller 1, the control part 50 will operate the drainage pump 5a. Further, the control unit 50 operates the actuator 7 in advance according to the process conditions such as the type of the processing liquid (for example, the viscosity of the processing liquid) and the conveyance speed of the substrate W, thereby height of the suction head 31 from the substrate surface WS. Adjust the position. Thereby, the gap G between the facing surface 33 and the substrate surface WS is adjusted, and the thickness of the processing liquid sandwiched between the substrate surface WS and the facing surface 33 is controlled to the gap G. As a result, the distribution ratio between the amount of the processing liquid adhering to the substrate surface WS (thickness TH) and the amount of the processing liquid sandwiched between the substrate surface WS and the facing surface 33 and the amount of the processing liquid scraped off by the side surface 34 is It is controlled, and an optimum suction state from each of the suction ports 61 to 63 can be realized according to the process conditions. In this case, the control unit 50 stores a plurality of job data that correlates the process recipe that defines the content of the liquid draining process, the gap G between the opposing surface 33 and the substrate surface WS, and various process conditions, The job data corresponding to the processing recipe may be read from the control unit 50 according to the processing content, and the height position may be controlled by moving the suction head 31.

基板Wが吸引ヘッド31の配設位置に達すると、基板表面WSに付着する処理液は上流辺部35によって上下方向に仕切られる。これにより、上流辺部35より下方側に仕切られた処理液は、対向面33と基板表面WSとの間に液密状態となって挟まれ、その間隙Gに応じて厚み(液体量)が所定量に規定される。そして、所定の厚みGに規定された処理液が対向面33に開口された吸引口61、62から吸引除去される。ここで、先ず上流側(−X)に配設された上流側吸引口61より処理液が吸引除去される結果、下流側(+X)に配設された下流側吸引口62より吸引される処理液の液量は、上流側吸引口61より吸引する液量に比較して確実に減少している。したがって、下流側吸引口62より吸引する処理液の厚みは、対向面33と基板表面WSとの間隙Gよりも確実に小さくなっており、安定して処理液が基板表面WSから吸引除去される。   When the substrate W reaches the position where the suction head 31 is disposed, the processing liquid adhering to the substrate surface WS is partitioned in the vertical direction by the upstream side portion 35. As a result, the processing liquid partitioned downward from the upstream side portion 35 is sandwiched between the facing surface 33 and the substrate surface WS in a liquid-tight state, and the thickness (liquid amount) depends on the gap G. It is prescribed to a predetermined amount. Then, the processing liquid having a predetermined thickness G is removed by suction from the suction ports 61 and 62 opened in the facing surface 33. Here, the processing liquid is first sucked and removed from the upstream suction port 61 disposed on the upstream side (−X), and as a result, is sucked from the downstream suction port 62 disposed on the downstream side (+ X). The liquid volume is surely reduced as compared with the liquid volume sucked from the upstream suction port 61. Therefore, the thickness of the processing liquid sucked from the downstream suction port 62 is surely smaller than the gap G between the opposing surface 33 and the substrate surface WS, and the processing liquid is stably sucked and removed from the substrate surface WS. .

その一方で、上流辺部35より上方側に仕切られた処理液は、側面34によって掻き取られて側面34に開口された吸引口63に導かれ該吸引口63より吸引除去される。このとき、処理液の液量、処理液の種類や吸引量などの諸条件によっては、処理液の一部が吸引されずにヘッド本体32の上流側端部に滞留する場合もあるが、対向面33と基板表面WSとの間は液密状態とされていることから、滞留する処理液は基板表面WSに再付着することなく、基板表面WSから側方に緩やかに排出される。こうして、基板WのY方向の全体にわたって処理液が基板表面WSから除去されながら、搬送ローラ1によって移動方向に基板Wが搬送されることで基板表面WSの全体から処理液が除去される。   On the other hand, the processing liquid partitioned above the upstream side portion 35 is scraped off by the side surface 34 and guided to the suction port 63 opened in the side surface 34, and is sucked and removed from the suction port 63. At this time, depending on various conditions such as the amount of the processing liquid, the type of the processing liquid, and the suction amount, a part of the processing liquid may stay in the upstream end of the head body 32 without being sucked. Since the space between the surface 33 and the substrate surface WS is in a liquid-tight state, the staying processing liquid is gently discharged laterally from the substrate surface WS without reattaching to the substrate surface WS. In this way, the processing liquid is removed from the entire substrate surface WS by being transported in the moving direction by the transport roller 1 while the processing liquid is being removed from the substrate surface WS over the entire Y direction of the substrate W.

また、上記のように基板表面WSから処理液を除去することにより、基板表面WSから全ての処理液を可能なかぎり除去するほか、基板表面WSに所定量の処理液を残すように基板表面WSに残留させる液量をコントロールすることも容易となる。すなわち、エッチング処理後のエッチングむらを防止するために基板表面WSに所定の厚みで液膜を残す場合には、基板表面WSに付着する処理液の液量にかかわらず、ヘッド本体32と基板表面WSとに挟まれる液量が一定量とされることで安定した処理液の吸引除去が実現され、基板表面WSに残留させる処理液の厚みを均一にすることができる。さらに、吸引ヘッド31の高さ位置や吸引量を設定変更することで、基板表面WSに残留させる処理液の厚みを微細にコントロールすることも可能である。   Further, by removing the processing liquid from the substrate surface WS as described above, all the processing liquid is removed from the substrate surface WS as much as possible, and the substrate surface WS is left so as to leave a predetermined amount of the processing liquid on the substrate surface WS. It is also easy to control the amount of liquid remaining in the liquid. That is, when a liquid film is left with a predetermined thickness on the substrate surface WS in order to prevent the etching unevenness after the etching process, the head main body 32 and the substrate surface regardless of the amount of the processing liquid adhering to the substrate surface WS. Since the amount of liquid sandwiched between WSs is fixed, stable removal of the processing liquid is realized, and the thickness of the processing liquid remaining on the substrate surface WS can be made uniform. Furthermore, the thickness of the processing liquid remaining on the substrate surface WS can be finely controlled by changing the setting of the height position and suction amount of the suction head 31.

以上のように、この実施形態によれば、ヘッド本体32の対向面33を基板表面WSに付着する処理液の液面LLよりも下方側に位置するように基板表面WSに対向させながら基板Wを移動方向(+X)に搬送させている。そして、この状態で対向面33に開口された吸引口61,62と側面34に開口された吸引口63より処理液を吸引している。このため、上流辺部35より下方側に仕切られ、対向面33と基板表面WSに挟まれた処理液は対向面33と基板表面WSとの間隔Gに応じて厚みが規定され、ヘッド本体32と基板Wとに挟まれる液体量を一定として吸引口61,62により確実に液体が吸引除去される。その一方で、上流辺部35より上方側に仕切られ、側面34によって掻き取られた処理液は吸引口63に導かれ吸引口63より吸引除去されるとともに、その一部が吸引しきれない場合に基板表面WSに再付着することなく限定的に基板外に排出される。その結果、基板表面WSに付着する処理液の液量にかかわらず、処理液を安定して除去することができる。   As described above, according to this embodiment, the substrate W while facing the substrate surface WS so that the facing surface 33 of the head main body 32 is positioned below the liquid level LL of the processing liquid adhering to the substrate surface WS. In the moving direction (+ X). In this state, the processing liquid is sucked from the suction ports 61 and 62 opened in the facing surface 33 and the suction port 63 opened in the side surface 34. Therefore, the thickness of the processing liquid that is partitioned below the upstream side 35 and is sandwiched between the facing surface 33 and the substrate surface WS is regulated according to the gap G between the facing surface 33 and the substrate surface WS, and the head body 32. The liquid is surely removed by suction through the suction ports 61 and 62 with the amount of liquid sandwiched between the substrate W and the substrate W fixed. On the other hand, the processing liquid that is partitioned above the upstream side portion 35 and scraped off by the side surface 34 is guided to the suction port 63 and removed by suction from the suction port 63, and a part of the processing liquid cannot be sucked. Without being reattached to the substrate surface WS, it is discharged out of the substrate in a limited manner. As a result, the processing liquid can be stably removed regardless of the amount of the processing liquid adhering to the substrate surface WS.

また、ガスの吹き付けによって基板表面WSに付着する処理液を除去している訳ではないことから、処理液がミスト(ミスト状の処理液)となって飛散することがない。したがって、ミストの基板Wの下流側への再付着を防止して処理の均一化を図ることができる。   Further, since the processing liquid adhering to the substrate surface WS is not removed by gas blowing, the processing liquid does not scatter as a mist (mist-like processing liquid). Therefore, it is possible to prevent the mist from re-adhering to the downstream side of the substrate W and to achieve uniform processing.

また、この実施形態によれば、移動方向に沿って2つの吸引口61,62を対向面33に並べて開口させている。このため、基板表面WSから安定して処理液を吸引除去するとともに、高効率で処理液を回収・再利用することができる。一方で、基板表面WSから処理液を確実に除去することが可能となることから、基板Wを高速搬送させながら処理液を除去することができる。その結果、装置のスループットを向上させることができる。   Further, according to this embodiment, the two suction ports 61 and 62 are opened on the opposing surface 33 along the moving direction. For this reason, the processing liquid can be stably removed from the substrate surface WS, and the processing liquid can be recovered and reused with high efficiency. On the other hand, since the processing liquid can be reliably removed from the substrate surface WS, the processing liquid can be removed while transporting the substrate W at a high speed. As a result, the throughput of the apparatus can be improved.

また、ヘッド本体32の上流側端部では、対向面33と側面34とが鋭角θをなすように構成しているので、上流辺部35によって上方側に仕切られた処理液を側面34に担持させて、ヘッド本体32の上流側端部に処理液が滞留するのを防止することができる。さらに、処理液を吸引口63に確実に導いて吸引口63より吸引除去させる点で有利である。   Further, since the opposing surface 33 and the side surface 34 form an acute angle θ at the upstream end portion of the head body 32, the processing liquid partitioned upward by the upstream side portion 35 is supported on the side surface 34. Thus, the treatment liquid can be prevented from staying at the upstream end of the head body 32. Further, it is advantageous in that the processing liquid is surely guided to the suction port 63 and sucked and removed from the suction port 63.

また、吸引口63は上流辺部35に近接して側面34に開口されているので、吸引口63が処理液の液面LLより下方に位置され外部雰囲気に露出する機会が低減される。したがって、外部雰囲気であるエア等の気体の巻き込みを抑制して、処理液の吸引効率の低下を防止することができる。   Further, since the suction port 63 is opened on the side surface 34 in the vicinity of the upstream side portion 35, the opportunity for the suction port 63 to be positioned below the processing liquid level LL and exposed to the external atmosphere is reduced. Therefore, entrainment of gas such as air that is an external atmosphere can be suppressed, and a reduction in the suction efficiency of the processing liquid can be prevented.

また、上記実施形態では、吸引ヘッド31の高さ位置を制御して対向面33と基板表面WSとで挟まれる処理液の厚みを調整しているので、基板表面WSと対向面33とに挟まれる処理液の液量と、側面である傾斜面によって掻き取られる処理液の液量の配分比率を自在にコントロールすることができる。このため、処理液の粘性などのプロセス条件に応じて吸引口61,62および吸引口63からの最適な吸引状態を実現して、処理液を効率良く吸引除去することができる。   In the above embodiment, the height position of the suction head 31 is controlled to adjust the thickness of the processing liquid sandwiched between the opposing surface 33 and the substrate surface WS. It is possible to freely control the distribution ratio between the amount of the processing liquid to be collected and the amount of the processing liquid scraped off by the inclined surface that is the side surface. For this reason, an optimum suction state from the suction ports 61 and 62 and the suction port 63 can be realized in accordance with process conditions such as the viscosity of the processing liquid, and the processing liquid can be efficiently suctioned and removed.

なお、本発明は上記した実施形態に限定されるものではなく、その趣旨を逸脱しない限りにおいて上述したもの以外に種々の変更を行うことが可能である。例えば、上記実施形態では、本発明の「第1開口部」として2つの吸引口61,62を移動方向に並べて対向面33に開口させているが、単数あるいは3つ以上の吸引口を移動方向に多段に並べて開口させるようにしてもよい。また、本発明の「第2開口部」についても同様に1つの吸引口63に限らず、複数の吸引口を移動方向に並べて側面34に開口させるようにしてもよい。   The present invention is not limited to the above-described embodiment, and various modifications other than those described above can be made without departing from the spirit of the present invention. For example, in the above-described embodiment, the two suction ports 61 and 62 are arranged in the movement direction and opened on the facing surface 33 as the “first opening” of the present invention, but one or more suction ports are arranged in the movement direction. Alternatively, the openings may be arranged in multiple stages. Similarly, the “second opening” of the present invention is not limited to the single suction port 63, and a plurality of suction ports may be arranged in the movement direction and opened on the side surface 34.

また、各吸引口61〜63を幅方向(Y方向)に延びるスリット形状の単一の開口としているが、幅方向に複数の開口を配列させるように構成してもよい。このように、対向面33と側面34とにそれぞれ吸引口を開口させているかぎり、吸引口の形状、数、配置等については任意である。   Moreover, although each suction port 61-63 is made into the slit-shaped single opening extended in the width direction (Y direction), you may comprise so that several opening may be arranged in the width direction. As described above, as long as the suction ports are respectively opened on the opposing surface 33 and the side surface 34, the shape, number, arrangement, and the like of the suction ports are arbitrary.

また、図5に示すように、側面34に開口された吸引口63の開口形状を変更するようにしてもよい。具体的には、吸引口63を形成する上側開口面63a(上側内壁面)と下側開口面63b(下側内壁面)のうち、上側開口面63aのX方向における長さを下側開口面63bの同方向の長さに対して長く形成するようにしてもよい。このように、上側開口面63aを移動方向の上流側に向けて延設することで、外部雰囲気からの吸引口63へのエアの侵入を防止するとともに、上側開口面63aより下方に広がる空間を処理液で満たすことができる。これにより、吸引口63へのエアの巻き込みを抑えて処理液の吸引効率を高めることができる。なお、上側開口面63aの延設方向はX方向に限らず、上側開口面63aをそのままに下側開口面63bより下方に位置する側面34を移動方向下流側(+X)に後退させるように形成することで、上側開口面63aを下側開口面63bに対して相対的に延設させるようにしてもよい。   Further, as shown in FIG. 5, the opening shape of the suction port 63 opened in the side surface 34 may be changed. Specifically, of the upper opening surface 63a (upper inner wall surface) and the lower opening surface 63b (lower inner wall surface) that form the suction port 63, the length in the X direction of the upper opening surface 63a is defined as the lower opening surface. You may make it form long with respect to the length of the same direction of 63b. In this way, by extending the upper opening surface 63a toward the upstream side in the moving direction, air can be prevented from entering the suction port 63 from the external atmosphere, and a space extending below the upper opening surface 63a can be provided. Can be filled with processing solution. Thereby, the entrainment of air into the suction port 63 can be suppressed and the suction efficiency of the processing liquid can be increased. The extending direction of the upper opening surface 63a is not limited to the X direction, and the side surface 34 located below the lower opening surface 63b is moved backward with respect to the movement direction (+ X) without changing the upper opening surface 63a. Thus, the upper opening surface 63a may be extended relative to the lower opening surface 63b.

また、上記実施形態では、吸引口61〜63はそれぞれヘッド本体32の内部に設けられた1つのマニホールド37に連通され、排液ポンプ5aを作動させることで各吸引口61〜63から一括して処理液の吸引を実行するように構成しているが、各吸引口61〜63ごとに独立して吸引量を調整可能に構成するようにしてもよい。このように構成することで、吸引ヘッドの高さ位置調整と併せて、プロセス条件に応じて各吸引口からの最適な吸引状態を実現することができる。   Moreover, in the said embodiment, the suction ports 61-63 are each connected by the one manifold 37 provided in the inside of the head main body 32, and it operates collectively from each suction port 61-63 by operating the drainage pump 5a. Although the processing liquid is sucked, the suction amount may be adjusted independently for each of the suction ports 61 to 63. By configuring in this way, it is possible to realize an optimum suction state from each suction port in accordance with the process conditions together with the height position adjustment of the suction head.

また、上記実施形態では、一方向(+X方向)に搬送される基板Wの表面WSから該基板表面WSに付着する処理液を除去しているが、これに限定されない。例えば回転される半導体ウエハやガラス基板等の表面WSから処理液の除去を行う基板処理装置にも適用することができる。   Moreover, in the said embodiment, although the process liquid adhering to this board | substrate surface WS is removed from the surface WS of the board | substrate W conveyed in one direction (+ X direction), it is not limited to this. For example, the present invention can also be applied to a substrate processing apparatus that removes a processing liquid from a surface WS such as a rotated semiconductor wafer or glass substrate.

また、上記実施形態では、吸引ヘッド31を移動方向に固定して基板Wを搬送しながら液切り処理するようにしているが、これに限定されない。例えば基板Wを固定して吸引ヘッド31を移動させながら液切り処理するようにしてもよいし、基板Wと吸引ヘッド31の双方を移動させながら液切り処理するようにしてもよい。   Moreover, in the said embodiment, although the suction head 31 is fixed to a moving direction and it carries out the liquid drain process while conveying the board | substrate W, it is not limited to this. For example, the substrate W may be fixed, and the liquid draining process may be performed while moving the suction head 31, or the liquid draining process may be performed while moving both the substrate W and the suction head 31.

また、上記実施形態では、エッチング処理後に基板表面WSに付着するエッチング液の液切りを行っているが、これに限定されない。例えば、「液体」として現像液、剥離液、洗浄液などの液切りを行うようにしてもよい。   In the above embodiment, the etching solution adhering to the substrate surface WS after the etching process is drained, but the present invention is not limited to this. For example, the developer, stripping solution, cleaning solution or the like may be removed as “liquid”.

この発明は、半導体ウエハ、液晶表示装置用ガラス基板、PDP(プラズマ・ディスプレイ・パネル)用基板、あるいは磁気ディスク用のガラス基板やセラミック基板などを含む基板全般の表面から湿式処理後に該基板表面に付着する液体を除去する基板処理装置に適用することができる。   The present invention applies a wet process from the surface of a general substrate including a semiconductor wafer, a glass substrate for a liquid crystal display device, a substrate for a plasma display panel (PDP), or a glass substrate or a ceramic substrate for a magnetic disk. The present invention can be applied to a substrate processing apparatus that removes adhering liquid.

この発明にかかる基板処理装置の一実施形態を示す側断面図である。It is a sectional side view which shows one Embodiment of the substrate processing apparatus concerning this invention. 図1の基板処理装置の制御構成を示すブロック図である。It is a block diagram which shows the control structure of the substrate processing apparatus of FIG. 図1の基板処理装置の液切り部の構成を示す斜視図である。It is a perspective view which shows the structure of the liquid draining part of the substrate processing apparatus of FIG. 図1の基板処理装置の液切り部に装備された吸引ヘッドの断面図である。FIG. 2 is a cross-sectional view of a suction head provided in a liquid draining part of the substrate processing apparatus of FIG. 1. 吸引ヘッドの変形形態を示す図である。It is a figure which shows the deformation | transformation form of a suction head.

符号の説明Explanation of symbols

2…ローラ駆動部(駆動手段)
5a…排液ポンプ(吸引手段)
7…アクチュエータ(位置調整手段)
32…ヘッド本体
33…対向面
34…側面(傾斜面)
35…上流辺部
61…吸引口(第1開口部)
62…吸引口(第1開口部)
63…吸引口(第2開口部)
G…対向面と基板表面との間隙
LL…基板表面に付着する液体の液面
W…基板
W1…対向面および傾斜面の幅方向の幅
W2…基板の幅方向の幅
WS…基板表面
X…移動方向
Y…幅方向
θ…鋭角
2 ... Roller drive section (drive means)
5a ... Drainage pump (suction means)
7. Actuator (position adjustment means)
32 ... Head body 33 ... Opposing surface 34 ... Side surface (inclined surface)
35 ... Upstream side 61 ... Suction port (first opening)
62 ... Suction port (first opening)
63 ... Suction port (second opening)
G: Gap between the opposing surface and the substrate surface LL: Liquid level of the liquid adhering to the substrate surface W ... Substrate W1: Width in the width direction of the opposing surface and the inclined surface W2: Width in the substrate width direction WS ... Substrate surface X ... Movement direction Y ... Width direction θ ... Acute angle

Claims (6)

液体が付着する基板の表面から該液体を除去する基板処理装置において、
前記基板表面に対向する対向面を有し、該対向面が前記基板表面に付着する前記液体の液面に対して下方側に位置するように前記基板表面から離間配置されたヘッド本体と、
前記ヘッド本体を前記基板に対して所定の移動方向に相対移動させる駆動手段と、
前記基板表面に付着する前記液体を前記ヘッド本体より吸引して前記基板表面から除去する吸引手段と
を備え、
前記ヘッド本体は、前記対向面に開口され前記対向面と前記基板表面との間から前記液体を吸引する第1開口部と、前記対向面を規定する辺部のうち前記移動方向の上流側に位置する上流辺部に接続されるとともに該上流辺部から前記対向面に対して前記移動方向の上流側を臨みながら前記基板表面から離れる方向に延設された傾斜面と、該傾斜面に開口され前記傾斜面上の前記液体を吸引する第2開口部とをさらに有する
ことを特徴とする基板処理装置。
In the substrate processing apparatus for removing the liquid from the surface of the substrate to which the liquid adheres,
A head body having a facing surface facing the substrate surface, the head main body being spaced apart from the substrate surface so that the facing surface is positioned below the liquid surface of the liquid adhering to the substrate surface;
Drive means for moving the head body relative to the substrate in a predetermined movement direction;
A suction means for sucking out the liquid adhering to the substrate surface from the head body and removing it from the substrate surface;
The head main body is opened on the facing surface and is disposed on the upstream side in the moving direction among a first opening for sucking the liquid from between the facing surface and the substrate surface, and a side portion defining the facing surface. An inclined surface that is connected to the upstream side portion that is positioned and extends from the upstream side portion in a direction away from the substrate surface while facing the upstream side in the movement direction with respect to the facing surface, and an opening in the inclined surface And a second opening for sucking the liquid on the inclined surface.
前記基板表面に対して平行でかつ前記移動方向に対して直交する方向を幅方向としたとき、
前記ヘッド本体では、前記対向面および前記傾斜面の前記幅方向の幅は少なくとも前記基板の前記幅方向の幅以上に形成され、
前記第1開口部および前記第2開口部はそれぞれ前記幅方向に延びるスリットを形成する請求項1記載の基板処理装置。
When the direction parallel to the substrate surface and perpendicular to the moving direction is the width direction,
In the head body, the width in the width direction of the facing surface and the inclined surface is at least equal to or greater than the width in the width direction of the substrate,
The substrate processing apparatus according to claim 1, wherein each of the first opening and the second opening forms a slit extending in the width direction.
前記第1開口部は、前記移動方向に沿って互いに所定の間隔をあけながら前記対向面に開口された複数の吸引口を有する請求項1または2記載の基板処理装置。   3. The substrate processing apparatus according to claim 1, wherein the first opening has a plurality of suction ports opened in the facing surface while being spaced apart from each other along the movement direction. 前記第2開口部は、前記上流辺部に近接して前記傾斜面に開口されている請求項1ないし3のいずれかに記載の基板処理装置。   The substrate processing apparatus according to claim 1, wherein the second opening is opened in the inclined surface in the vicinity of the upstream side. 前記ヘッド本体の上流側端部では、前記対向面と前記傾斜面とが鋭角をなしている請求項1ないし4のいずれかに記載の基板処理装置。   The substrate processing apparatus according to claim 1, wherein the opposing surface and the inclined surface form an acute angle at an upstream end portion of the head body. 前記ヘッド本体を駆動して前記基板表面に対する前記ヘッド本体の高さ位置を調整する位置調整手段と、前記位置調整手段を制御して前記ヘッド本体の対向面と前記基板表面との間隙を調整し、前記基板表面と前記対向面とに挟まれる前記液体の厚みを制御する制御手段とをさらに備える請求項1ないし5のいずれかに記載の基板処理装置。   Position adjustment means for adjusting the height position of the head body relative to the substrate surface by driving the head body; and controlling the position adjustment means to adjust a gap between the facing surface of the head body and the substrate surface. 6. The substrate processing apparatus according to claim 1, further comprising control means for controlling a thickness of the liquid sandwiched between the substrate surface and the facing surface.
JP2005188435A 2005-06-28 2005-06-28 Substrate processing equipment Expired - Fee Related JP4488965B2 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009170624A (en) * 2008-01-16 2009-07-30 Sumitomo Metal Mining Co Ltd Photoresist removing method and photoresist removing device for photoetching

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR200477433Y1 (en) * 2013-12-27 2015-06-09 엔티피 주식회사 vacuum suction device for efficient substrate transfer

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JPH06342782A (en) * 1993-05-31 1994-12-13 Dainippon Screen Mfg Co Ltd Substrate surface treating apparatus
JPH1050650A (en) * 1996-07-30 1998-02-20 Nec Corp Substrate surface treating apparatus
JP2001284312A (en) * 2000-03-29 2001-10-12 Semiconductor Leading Edge Technologies Inc Wet processor and chemical removing method

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JPH06342782A (en) * 1993-05-31 1994-12-13 Dainippon Screen Mfg Co Ltd Substrate surface treating apparatus
JPH1050650A (en) * 1996-07-30 1998-02-20 Nec Corp Substrate surface treating apparatus
JP2001284312A (en) * 2000-03-29 2001-10-12 Semiconductor Leading Edge Technologies Inc Wet processor and chemical removing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009170624A (en) * 2008-01-16 2009-07-30 Sumitomo Metal Mining Co Ltd Photoresist removing method and photoresist removing device for photoetching

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