JP2007009241A - Plating device, and plating method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plating device and a plating method where a plating film easy to be subjected to a CMP (chemical mechanical polishing) process is formed, and a load upon the CMP process in the following stage can be reduced. <P>SOLUTION: The plating device is provided with: a substrate holding part 36 of holding a substrate W; a cathode part provided with a cathode electrode 88 contacted with the substrate W hold by the substrate holding part 36 and energizing the same; an anode 98 arranged at a position confronted with the surface of the substrate W; and a contact material 112 arranged between the substrate W held by the substrate holding part 36 and the anode 98 freely movably to a direction to be approached/separated to the substrate W, and having through holes 112a linearly piercingly elongating to the same moving direction. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a plating apparatus and a plating method, and in particular, forms a wiring by embedding a metal (wiring material) such as copper in a fine wiring recess (circuit pattern) formed on the surface of a substrate such as a semiconductor substrate. The present invention relates to a plating apparatus and a plating method used in the above.

  In recent years, as a metal material for forming a wiring circuit on a semiconductor substrate, a movement of using copper (Cu) having a low electrical resistivity and a high electromigration resistance instead of aluminum or an aluminum alloy has become prominent. This type of copper wiring is generally formed by embedding copper in a fine wiring recess provided on the surface of the substrate. As a method of forming this copper wiring, there are methods such as CVD, sputtering, and plating, but in any case, copper is formed on almost the entire surface of the substrate, which is unnecessary by chemical mechanical polishing (CMP). Copper is removed.

FIG. 1 shows a manufacturing example of this type of copper wiring board in the order of steps. First, as shown in FIG. 1A, an insulating layer 2 such as an oxide film made of SiO ₂ or a Low-K material film is deposited on a conductive layer 1a on a semiconductor substrate 1 on which a semiconductor element is formed, Inside the insulating layer 2, a contact hole 3 and a trench 4 are formed as wiring recesses by lithography / etching technology. A barrier layer 5 made of TaN, TiN, or the like is further formed thereon, and a seed layer 7 is formed thereon as a power feeding layer for electrolytic plating by sputtering, CVD, or the like.

  Then, as shown in FIG. 1B, the surface of the seed layer 7 of the substrate W is plated with copper, so that the contact holes 3 and the trenches 4 are filled with copper, and the copper film 6 is formed on the insulating layer 2. To deposit. Thereafter, the copper film 6, the seed layer 7 and the barrier layer 5 on the insulating layer 2 are removed by chemical mechanical polishing (CMP), and the surface of the copper film 6 filled in the contact hole 3 and the trench 4 The surface of the insulating layer 2 is substantially flush with the surface. As a result, as shown in FIG. 1C, a wiring made of the copper film 6 is formed inside the insulating layer 2.

  By using a Low-K material having a high dielectric constant as the insulating layer for forming the wiring therein, the reliability of the miniaturized wiring can be improved. However, the Low-K material is generally weak in mechanical strength. Therefore, if copper is buried in the trench formed inside the insulating layer made of the Low-K material by plating, and then an unnecessary copper on the insulating layer is removed in the CMP process, dishing is performed on the surface of the insulating layer. If an attempt is made to suppress the occurrence of dishing, copper remains uncut and it becomes difficult to completely remove unnecessary copper. In order to reduce the burden on the CMP process as much as possible, in the plating process, it is required to make a plating film that does not burden the CMP process as much as possible.

  However, it is generally difficult to make a plating film that does not impose a burden on the CMP process while deteriorating the film quality of the plating film or preventing scratches on the surface of the plating film. Is currently unfinished.

  The present invention has been made in view of the above circumstances, and provides a plating apparatus and a plating method capable of forming a plating film that is easy to perform a CMP process and reducing the burden on the CMP process of the next step. Objective.

  According to the first aspect of the present invention, there is provided a substrate holding portion that holds a substrate, a cathode portion that includes a cathode electrode that contacts and energizes the substrate held by the substrate holding portion, and a position facing the surface of the substrate. An anode to be disposed, and a through-hole extending in a straight line along the moving direction between the anode and the substrate held by the substrate holding unit and the anode so as to be movable in a moving direction. It is a plating apparatus characterized by having a contact material.

  When a contact material having a through-hole extending linearly between the anode and the substrate is inserted between the anode and the substrate and the contact material is brought into contact with the surface of the substrate, plating is performed. In the wiring forming part, the surface of the substrate is in direct contact with the contact material except for the part facing the through hole provided in the contact material, and the plating solution is excluded from this contact part, so that it grows along the through hole. A columnar plated film (columnar portion) is formed. In the wiring forming portion, the interior of the recess for wiring such as the trench is not in contact with the contact material, and the interior of the recess is filled with the plating solution. When the plating film reaches the contact surface of the contact material and grows so as to fill the inside, it grows in a columnar shape along the through hole of the contact material. At this time, the bases of the columnar plating films (columnar portions) formed in the non-wiring forming portion and the wiring forming portion are aligned at the same height.

  By polishing the surface of the plating film having such a shape by CMP, innumerable columnar plating films on the surface can be easily removed with a relatively small force. As a result, the surface of the plating film after eliminating the innumerable columnar plating film is a flat surface with less unevenness, and the CMP has a shape that is easier to polish than a conventional uneven plating film.

The invention according to claim 2 has a pressing mechanism that presses a contact surface of the contact material facing the surface of the substrate held by the substrate holding portion against the surface of the substrate. This is a plating apparatus.
Thus, the contact surface facing the surface of the substrate held by the substrate holding portion of the contact material can be brought into contact with the surface of the substrate while being pressed through the pressing mechanism.

The invention described in claim 3 is characterized in that a pressing material for pressing the contact surface of the contact material against the surface of the substrate is disposed between the contact material and the anode. It is a plating apparatus of description.
Thus, the contact surface of the contact material can be brought into contact with the surface of the substrate through the pressing material. The pressing material is made of, for example, a porous body in order to pass electricity, in other words, to pass the plating solution.

The invention according to claim 4 is characterized in that a cushioning material having flexibility to press the contact surface of the contact material uniformly against the surface of the substrate is disposed between the contact material and the anode. It is a plating apparatus in any one of Claims 1 thru | or 3.
As a result, the contact surface of the contact material is pressed by the cushion material while pressing the contact surface of the contact material over the entire surface of the substrate with a uniform pressing force, and the contact surface of the contact material is locally lifted from the surface of the substrate. Can be prevented.

According to a fifth aspect of the present invention, the through hole provided in the contact material has a circular cross section with a diameter of 12 μm or less, and 1.0 × 10 ^{5 to} 1.0 × 10 ⁹ pieces / cm ² . The plating apparatus according to any one of claims 1 to 4, wherein the plating apparatus is distributed in density.
Thereby, the columnar plating film formed on the surface of the substrate has a diameter of 12 μm or less and becomes a cylindrical shape distributed at a density of 1.0 × 10 ^{5 to} 1.0 × 10 ⁹ pieces / cm ^2. The cylindrical plating film can be easily dropped by CMP. Moreover, it is possible to prevent a situation in which the columnar plating film is too large compared to the wiring recesses such as the trench and the columnar plating film is not formed in the wiring forming portion.

The invention according to claim 6 is the plating apparatus according to any one of claims 1 to 5, wherein the Ra value of the surface roughness of the contact surface of the contact material is 1 μm or less.
By making the Ra value (centerline average roughness) of the surface roughness of the contact surface of the contact material in contact with the surface of the substrate 1 μm or less, the adhesion of the contact surface to the surface of the substrate is improved. When the surface is brought into contact with the surface of the substrate, it is possible to prevent a gap from being formed between them, thereby forming an extra plating film on the non-wiring forming portion and placing a burden on the subsequent CMP process. Can be prevented.

The invention according to claim 7 is the plating apparatus according to any one of claims 1 to 6, wherein the contact material is made of an insulator.
The invention according to claim 8 is the plating apparatus according to claim 7, wherein the contact material is made of polycarbonate, ceramics, carbon, polyester, glass, silicon, a resist material, or a fluororesin.
Resist materials for photolithography and X-ray lithography can be used. For example, by using PMMA (acrylic resin) or SU-8 (trade name, manufactured by Kayaku Microchem Co., Ltd.), a high aspect ratio can be used. The fine pattern processing at the ratio becomes possible, and a thick film (contact material) having fine through holes can be obtained.
Examples of the fluororesin contact material include PFA as a material and a fine through hole formed by applying a lithography technique.

The invention according to claim 9 is the plating apparatus according to any one of claims 1 to 8, further comprising an etching mechanism for etching a plating film formed on the surface of the substrate.
By removing the columnar plating film formed on the surface of the substrate by etching using an etching mechanism, the burden on the subsequent CMP process can be further reduced. Specific examples of this etching mechanism include, for example, a power source capable of reversing the polarity, an equivalent circuit, or etching using chemicals (chemical etching).

According to a tenth aspect of the present invention, the through hole provided in the contact material has a tapered shape in which a cross-sectional area gradually decreases in a direction away from the contact surface. The plating apparatus according to any one of the above.
Thus, when a pillar-shaped plating film having a sharp point is formed on the surface of the substrate, for example, when a through-hole having a large diameter is provided in the contact material and the plating film is formed in the through-hole, plating is performed. Later, the plating film can be easily pulled out from the through hole of the contact material.

According to an eleventh aspect of the present invention, a substrate having a wiring recess formed on the surface is prepared, an anode is disposed at a position facing the surface of the substrate, and a linear shape is formed between the substrate and the anode. A contact material having a through-hole extending in contact with a surface of the contact material facing the surface of the substrate and pressing the contact material against the surface of the substrate; filling the plating solution between the anode and the substrate; And plating the surface of the substrate by flowing a plating current between the substrate and the surface of the substrate.
A twelfth aspect of the present invention is the plating method according to the eleventh aspect, wherein the surface of the substrate is plated while the contact material is stationary with respect to the substrate.

The invention according to claim 13 is characterized in that after the surface of the substrate is plated, the relative position of the contact surface of the contact material to the surface of the substrate is changed, and the surface of the substrate is plated again. The plating method according to claim 11 or 12.
As a result, for example, when the depth of the recess for wiring such as a trench is deep and it takes a long time for plating, the columnar plating film grows too much and cannot be easily removed from the through hole provided in the contact material. Can be prevented.

  The invention according to claim 14 is characterized in that after the contact material is separated from the surface of the substrate, the relative position of the contact surface of the contact material with respect to the surface of the substrate is changed. It is.

  As a result, when the contact material is separated from the surface of the substrate and pressed again, the column-shaped plating film formed so far is pushed down, and in the next plating, the column-shaped plating film is further applied to the surface of the pushed-down plating film. Can be grown. By repeating this, the difference in level of unevenness on the surface of the plating film is gradually reduced without breaking the contact material, and finally, a columnar plating film that can be formed on the surface when all the recesses for wiring are embedded The columnar plating film can be pulled out from the porous body without breaking the contact material in such a way as to be relatively low. The method of changing the relative position includes not only active movement of the contact material and the substrate but also the case of changing the relative position due to a design dimensional error or play.

The invention according to claim 15 is the plating method according to claim 13 or 14, wherein the plating film formed on the surface of the substrate is etched before the surface of the substrate is plated again.
The invention described in claim 16 is characterized in that the etching is performed while filling the plating between the anode and the substrate and reversing the polarities of the surfaces of the anode and the substrate from those during plating. Item 16. The plating method according to Item 15.

The invention according to claim 17 is the plating method according to claim 16, wherein the etching is performed by separating the contact material from the surface of the substrate.
When etching is performed in this manner, electricity concentrates and flows at a sharp point, so that the columnar plating film is preferentially etched over the plating film embedded in the wiring recess. Then, by repeating the operation of performing the next plating when the columnar plating film is exhausted, the unevenness of the plating film surface unevenness is gradually reduced without breaking the contact material. The columnar plating film formed on the surface when all the recesses are buried can be made relatively low, and the columnar plating film can be pulled out from the contact material without breaking the contact material. In addition, electrolysis (reverse electrolysis) opposite to that during plating is performed between the anode and the surface of the substrate under conditions that are isotropically etched, and the thickness corresponding to half the thickness of the columnar plating film. By etching, the columnar plating film can be removed by etching without depending on its height.

According to an eighteenth aspect of the present invention, after the substrate is plated by the plating method according to any of the eleventh to seventeenth aspects, the surface of the substrate is polished by a CMP apparatus to remove excess plating film other than the wiring portion. This is a substrate processing method.
In the invention according to claim 19, after plating the substrate by the plating method according to any one of claims 11 to 17, after removing the columnar portion of the substrate surface with an etching apparatus to obtain a flat surface, A substrate processing method comprising polishing a substrate surface with a CMP apparatus and removing an excessive plating film other than a wiring portion.

The invention according to claim 20 grows linearly along the through-hole obtained by plating the contact material having a through-hole extending linearly inside while contacting the surface of the substrate. It is a plating film having an infinite number of columnar portions.
The invention according to claim 21 is the plating film according to claim 20, wherein the columnar shape is a columnar shape having a diameter of 12 μm or less.

  According to the present invention, it is possible to form a columnar plating film having a relatively flat base at a base level while embedding a plating film in a wiring recess such as a trench. The columnar plating film can be easily removed by the CMP process in the next step, and the surface of the plating film after the removal of the columnar plating film is relatively flat. The burden can be reduced.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. This embodiment shows an example in which copper is embedded in a fine wiring recess provided on the surface of a semiconductor substrate to form a wiring made of copper.
FIG. 2 shows an overall layout of a substrate processing apparatus provided with a plating apparatus according to an embodiment of the present invention. As shown in FIG. 2, this substrate processing apparatus includes two load / unload units 10 that are located in the same facility and house a plurality of substrates W therein, and two platings that perform plating. A transport robot 14 for delivering the substrate W between the apparatus 12, the load / unload unit 10 and the plating apparatus 12, and a plating solution supply facility 18 having a plating solution tank 16 are provided.

  As shown in FIG. 3, the plating apparatus 12 includes a substrate processing unit 20 that performs a plating process and an incidental process thereof, and a plating solution tray 22 that stores a plating solution is disposed adjacent to the substrate processing unit 20. ing. Further, an electrode arm portion 30 having an electrode head 28 that is held at the tip of a swing arm 26 that swings about the rotation shaft 24 and swings between the substrate processing unit 20 and the plating solution tray 22 is provided. Yes. Further, a pre-coat / recovery arm 32 and a fixed nozzle 34 for injecting a chemical solution such as pure water or ionic water, gas, or the like toward the substrate are disposed on the side of the substrate processing unit 20. In this embodiment, three fixed nozzles 34 are provided, and one of them is used for supplying pure water.

  As shown in FIG. 4, the substrate processing unit 20 includes a substrate holding unit 36 that holds the substrate W with the substrate surface (surface to be plated) facing upward, and the substrate holding unit 36 above the substrate holding unit 36. The cathode part 38 arrange | positioned so that the peripheral part may be enclosed. Further, a substantially cylindrical cup 40 with a bottom that surrounds the periphery of the substrate holding part 36 and prevents scattering of various chemicals used during processing is arranged to be movable up and down via an air cylinder (not shown). Yes.

  The substrate holding unit 36 is moved up and down between a lower substrate delivery position A, an upper plating position B, and an intermediate pretreatment / cleaning position C by an air cylinder 44, and a rotation motor and a belt (not shown) are mounted. Thus, the cathode unit 38 rotates integrally with an arbitrary acceleration and speed. Opposite to the substrate delivery position A, a substrate carry-in / out port (not shown) is provided on the side of the transfer robot 14 on the side of the frame of the plating apparatus 12, and when the substrate holding part 36 is raised to the plating position B, The sealing material 90 and the cathode electrode 88 described below are in contact with the peripheral edge of the substrate W held by the substrate holder 36. On the other hand, the upper end of the cup 40 is located below the substrate carry-in / out port, and as shown by the phantom line in FIG.

  The plating solution tray 22 is used to wet the following pressing member 110, cushion material 111, contact material 112, and anode 98 of the electrode arm 30 with the plating solution when the plating process is not being performed. It is set to a size that can accommodate the contact material 110 and the like, and has a plating solution supply port and a plating solution drain port (not shown). In addition, a photo sensor is attached to the plating solution tray 22 so that the plating solution in the plating solution tray 22 is fully filled, that is, overflow and drainage can be detected.

  In this example, the electrode arm section 30 moves up and down via a vertical movement motor 132 composed of a servo motor and a ball screw 134 as described below, and the plating solution tray 22 and the electrode arm section 30 via a turning motor (not shown). The substrate processing unit 20 is swung (oscillated). A pneumatic actuator may be used instead of the motor.

  As shown in FIG. 5, the precoat / recovery arm 32 is connected to the upper end of a support shaft 58 extending in the vertical direction, pivots (swings) via a rotary actuator 60, and passes through an air cylinder (not shown). Move up and down. The precoat / collection arm 32 holds a precoat nozzle 64 for discharging a precoat liquid on the free end side, and a plating solution recovery nozzle 66 for collecting a plating liquid on the base end side. The precoat nozzle 64 is connected to, for example, a syringe driven by an air cylinder, and the precoat liquid is intermittently discharged from the precoat nozzle 64. The plating solution recovery nozzle 66 is connected to, for example, a cylinder pump or an aspirator, and the plating solution on the substrate is sucked from the plating solution recovery nozzle 66.

  As shown in FIGS. 6 to 8, the substrate holding unit 36 includes a disk-shaped substrate stage 68, and the substrate W is horizontally placed on the upper surface at six locations along the circumferential direction of the peripheral portion of the substrate stage 68. A support arm 70 is erected to be placed and held on the head. A positioning plate 72 is fixed to one upper end of the support arm 70 to be positioned in contact with the end surface of the substrate W, and a substrate is fixed to the upper end of the support arm 70 facing the support arm 70 to which the positioning plate 72 is fixed. A pressing piece 74 is pivotally supported so as to be rotated in contact with the end face of W and press the substrate W against the positioning plate 72 side. In addition, chuck claws 76 that pivot and press the substrate W downward from above are rotatably supported at the upper ends of the other four support arms 70.

Here, the lower end of the pressing piece 74 and the chuck claw 76 is connected to the upper end of the pressing bar 80 biased downward via the coil spring 78, and the pressing piece 74 and the chuck are moved along with the downward movement of the pressing bar 80. A claw 76 is pivoted inwardly and closed, and a support plate 82 is disposed below the substrate stage 68 so as to abut the lower surface of the pressing rod 80 and push it upward.
As a result, when the substrate holder 36 is positioned at the substrate delivery position A shown in FIG. 4, the pressing rod 80 contacts the support plate 82 and is pushed upward, so that the pressing piece 74 and the chuck pawl 76 rotate outward. When the substrate stage 68 is raised by moving, the pressing rod 80 is lowered by the elastic force of the coil spring 78, and the pressing piece 74 and the chuck pawl 76 are rotated inward and closed.

  As shown in FIGS. 9 and 10, the cathode portion 38 includes an annular frame 86 fixed to the upper end of a column 84 erected on the peripheral edge of a support plate 82 (see FIG. 8 and the like), and the frame 86. In this example, the cathode electrode 88 divided into six is attached to the lower surface and protrudes inward, and an annular seal member 90 is attached to the upper surface of the frame 86 so as to cover the upper side of the cathode electrode 88. Yes. The seal member 90 is configured such that an inner peripheral edge thereof is inclined downward inward and gradually becomes thin, and an inner peripheral end portion hangs downward.

As a result, as shown in FIG. 4, when the substrate holding portion 36 is raised to the plating position B, the cathode electrode 88 is pressed against the peripheral edge of the substrate W held by the substrate holding portion 36 and energized, and at the same time, the sealing material The inner peripheral end of 90 is pressed against the upper surface of the peripheral edge of the substrate W, and this is sealed in a watertight manner, so that the plating solution supplied to the upper surface (surface to be plated) of the substrate exudes from the end of the substrate W. And prevents the plating solution from contaminating the cathode electrode 88.
In this example, the cathode portion 38 cannot move up and down and rotates integrally with the substrate holding portion 36. However, the cathode portion 38 is movable up and down, and when it is lowered, the sealing material 90 is placed on the surface of the substrate W to be plated. You may comprise so that it may press-contact.

  11 to 13, the electrode head 28 of the electrode arm portion 30 covers the housing 94 connected to the free end of the swing arm 26 via a ball bearing 92 and the lower end opening of the housing 94. It has the flat pressing member 110 which consists of a porous body and is arrange | positioned. That is, an inward projecting portion 94a projecting inward is provided at the lower portion of the housing 94, and a flange portion 110a is provided at the upper portion of the pressing member 110, and the flange portion 110a is hooked on the inward projecting portion 94a. Further, the pressing member 110 is held in the housing 94 by interposing the spacer 96. As a result, a hollow plating solution chamber 100 is defined in the housing 94.

  A flat cushioning material 111 made of a porous material is attached to the lower surface of the pressing material 110 by sticking or the like, and the lower surface of the cushioning material 111 is made of a porous material and is vertically A flat contact material 112 having a large number of through holes 112a extending linearly therethrough is attached by sticking or the like. As a result, the contact surface (lower surface) 112 b facing the surface of the substrate W held by the substrate holding portion 36 of the contact material 112 is brought into contact with the surface (upper surface) of the substrate W through the pressing material 110. be able to.

  The pressing member 110 is made of, for example, a porous ceramic such as alumina, SiC, mullite, zirconia, titania, cordierite, or a hard porous body such as a sintered body of polypropylene or polyethylene, or a composite thereof, or a woven cloth or the like. It is composed of non-woven fabric. For example, in the case of alumina-based ceramics, the pore diameter is 30 to 200 μm, and in the case of SiC, the pore diameter is 30 μm or less, the porosity is 20 to 95%, the thickness is 1 to 20 mm, preferably 5 to 20 mm, and more preferably 8 to About 15 mm is used. In this example, for example, the porous ceramic plate is made of alumina with a porosity of 30% and an average pore diameter of 100 μm. And, by containing the plating solution inside this, that is, the porous ceramic plate itself is an insulator, by allowing the plating solution to enter inside intricately and by following a fairly long path in the thickness direction, It is comprised so that it may have an electrical conductivity smaller than the electrical conductivity of a plating solution.

  Thus, by placing the pressing material 110 in the plating solution chamber 100 and generating a large resistance by the pressing material 110, the influence of the resistance of the seed layer 7 (see FIG. 1) can be ignored. The in-plane uniformity of the plating film can be improved by reducing the in-plane difference of the current density due to the electric resistance of the surface of the substrate W.

  The cushion material 111 is made of, for example, polyurethane, polyethylene, or polyvinyl alcohol. For example, Soflas manufactured by Aion Co., Ltd., SUBA manufactured by Nita Co., Ltd., or the like is used as the cushion material 111. By interposing the cushioning material 111 having flexibility between the pressing material 110 and the contact material 112, the contact surface 112b of the contact material 112 is more uniform over the entire surface of the contact surface 112b than the surface of the substrate W. It is possible to prevent the contact surface 112b of the contact material 112 from locally floating from the surface of the substrate W by making contact while pressing with a small pressing force.

The contact material 112 is made of, for example, an insulator such as polycarbonate, ceramics, carbon, polyester, glass, silicon, a resist material, or a fluororesin, and whatman filter paper, an osmonics Nykuripore filter, or the like is used as the contact material 112. used. Inside, a large number of through-holes 112a penetrating vertically are provided, for example, having a circular cross section and a diameter of 12 μm or less and distributed at a density of 1.0 × 10 ^{5 to} 1.0 × 10 ⁹ holes / cm ^2. ing. Thereby, the columnar plating film formed on the surface of the substrate has a columnar shape with a diameter of 12 μm or less, and the columnar plating film can be easily dropped by subsequent CMP. In addition, the density of the through holes is set to 1.0 × 10 ^{5 to} 1.0 × 10 ⁹ holes / cm ^2, and all the recesses for wiring are plated by selecting an appropriate combination of the diameter and density of the holes. Can do.

As the contact material 112, it is possible to use a resist material such as PMMA which has been subjected to fine processing (formation of a through hole) on the submicron order by lithography technique. In this case, the film thickness is several hundred μm. The following contact materials can be produced.
Furthermore, the Ra value (centerline average roughness) of the surface roughness of the contact surface 112b of the contact material 112 is set to 1 μm or less. This improves the adhesion of the contact surface 112b of the contact material 112 to the surface of the substrate W, and prevents the formation of a gap between the two when the contact surface 112b is brought into contact with the surface of the substrate W. Thus, it is possible to prevent an excessive plating film from being formed on the non-wiring forming portion and placing a burden on the subsequent CMP process.

  Although not shown, the through hole provided inside the contact material may have a tapered shape in which the cross-sectional area gradually decreases in a direction away from the contact surface, that is, upward. Thus, when a pillar-shaped plating film having a sharp point is formed on the surface of the substrate, for example, when a through-hole having a large diameter is provided in the contact material and the plating film is formed in the through-hole, plating is performed. Later, the columnar plating film can be easily pulled out from the through hole of the contact material.

  In the plating solution chamber 100, an anode 98 is disposed on the lower surface of the plating solution introduction pipe 104 disposed above the pressing material 110 and is disposed above the pressing material 110. The plating solution introduction pipe 104 is provided with a plating solution introduction port 104a, and a plating solution supply pipe 102 extending from the plating solution supply facility 18 (see FIG. 2) is connected to the plating solution introduction port 104a. Further, a plating solution discharge pipe 106 communicating with the plating solution chamber 100 is connected to a plating solution discharge port 94 b provided on the upper surface of the housing 94.

  The plating solution introduction pipe 104 has a manifold structure so that the plating solution can be supplied uniformly to the surface (surface to be plated) of the substrate W. That is, a large number of thin tubes 116 communicating with the interior are connected to a predetermined position along the longitudinal direction. Fine pores are provided at positions corresponding to the thin tubes 116 of the anode 98, and the thin tubes 116 extend downward in the fine pores.

  As a result, the plating solution introduced from the plating solution supply pipe 102 into the plating solution introduction pipe 104 passes through the narrow tube 116 and reaches above the pressing material 110, fills the plating solution chamber 100, and fills the anode 98 with the plating solution. In addition to being immersed therein, it passes through the inside of the pressing material 110, the cushion material 111, and the contact material 112, reaches the lower surface of the contact material 112, and sucks the plating solution discharge tube 106, whereby the plating solution discharge tube 106. Discharged from.

  Here, the anode 98 is made of copper (phosphorus-containing copper) containing phosphorus having a content of 0.03 to 0.05% in order to suppress generation of slime. It may be an insoluble metal such as platinum or titanium, or an insoluble electrode obtained by plating platinum or the like on a metal, and is preferably an insoluble metal or an insoluble electrode because replacement or the like is unnecessary. . Further, a net-like shape may be used for ease of distribution of the plating solution. However, an insoluble one may be used.

  When performing plating, the cathode electrode 88 is electrically connected to the cathode of the plating power source 114, and the anode 98 is electrically connected to the anode of the plating power source 114. In this example, the plating power supply 114 can arbitrarily change the direction of the flowing current, and thus the plating apparatus has an etching function for etching the plating film. In other words, in the presence of the plating solution, the plating film can be etched via the plating power supply 114 such that the cathode electrode 88 becomes the anode and the anode 98 becomes the cathode.

  A pressing mechanism 122 that presses the contact surface 112 b of the contact material 112 toward the surface of the substrate W is provided between the ball bearing 92 and the swing arm 26. In other words, the pressing mechanism 122 has a compression coil spring 128 disposed between a pair of plates 124 and 126 disposed at positions separated from each other, and one end fixed to one plate 124 and provided at the other end. And a stopper 130 that restricts the distance between the pair of plates 124 and 126 from being increased by bringing the head 130a into contact with the other plate 126. On the other hand, the swing arm 26 is configured to move up and down via a vertical movement motor 132 formed of a servo motor and a ball screw 134. This vertical mechanism may be a pneumatic actuator.

  Thus, while the contact material 112 does not contact the surface of the substrate W, the electrode head 28 moves up and down (and swings) integrally with the swing arm 26 through the elastic force of the compression coil spring 128. When the swing arm 26 is further lowered after the contact member 112 comes into contact with the surface of the substrate W, the compression coil spring 128 is further contracted along with the lowering, and the elastic force of the compression coil spring 128 is reduced by the cushion material. This pressing force is applied to the contact material 112 via 111 to press the contact surface 112b of the contact material 112 against the surface of the substrate W and to control the amount of contraction (displacement) of the compression coil spring 128. Can be adjusted.

Next, the operation of the substrate processing apparatus provided with the plating apparatus of this embodiment will be described.
First, the substrate W before plating processing is taken out from the load / unload unit 10 by the transfer robot 14, and one plating apparatus is provided from the substrate loading / unloading port provided on the side surface of the frame with the surface (surface to be plated) facing upward. 12 to the inside. At this time, the substrate holding unit 36 is at the lower substrate delivery position A, and the transport robot 14 lowers the hand after the hand reaches just above the substrate stage 68, thereby supporting the substrate W on the support arm 70. Place on top. Then, the hand of the transfer robot 14 is retreated through the substrate carry-in / out entrance.

  After the removal of the hand of the transfer robot 14 is completed, the cup 40 is raised, and at the same time, the substrate holding part 36 that was in the substrate delivery position A is raised to the pretreatment / cleaning position C. At this time, with this rise, the substrate placed on the support arm 70 is positioned by the positioning plate 72 and the pressing piece 74 and is securely gripped by the chuck claws 76.

  On the other hand, the electrode head 28 of the electrode arm portion 30 is at a normal position on the plating solution tray 22 at this time, and the contact material 112 and the like are located in the plating solution tray 22, and the cup 40 is raised in this state. At the same time, supply of the plating solution to the plating solution tray 22 and the electrode head 28 is started. Then, a new plating solution is supplied until the substrate plating process is started, and at the same time, suction through the plating solution discharge pipe 106 is performed to replace the plating solution contained in the pressing material 110, the cushion material 111, and the contact material 112. And defoam. When the raising of the cup 40 is completed, the substrate loading / unloading port on the side surface of the frame is closed and closed by the cup 40, and the atmosphere inside and outside the frame is cut off.

  When the cup 40 moves up, the precoat process is started. That is, the substrate holding part 36 that has received the substrate W is rotated, and the precoat / collection arm 32 that has been in the retracted position is moved to a position facing the substrate. When the rotation speed of the substrate holding unit 36 reaches the set value, a precoat liquid made of, for example, a surfactant is intermittently discharged from the precoat nozzle 64 provided at the tip of the precoat / collection arm 32 onto the surface of the substrate. To do. At this time, since the substrate holding part 36 is rotating, the precoat liquid spreads over the entire surface of the substrate W. Next, the precoat / collection arm 32 is returned to the retracted position, the rotational speed of the substrate holding part 36 is increased, and the precoat liquid on the surface of the substrate W is shaken off by the centrifugal force and dried.

  After pre-coating is completed, the process proceeds to plating. First, the substrate holding unit 36 is raised to the plating position B where plating is performed in a state where the rotation is stopped or the rotation speed is reduced to the plating speed. Then, the peripheral portion of the substrate W comes into contact with the cathode electrode 88 and can be energized. At the same time, the sealing material 90 is pressed against the upper surface of the peripheral portion of the substrate W, and the peripheral portion of the substrate W is sealed watertight. .

  On the other hand, based on the signal that the precoat process of the loaded substrate W has been completed, the electrode arm unit 30 is swung horizontally from above the plating solution tray 22 so that the electrode head 28 is positioned above the position where the electrolytic process is performed. After reaching this position, the electrode head 28 is lowered toward the cathode portion 38. Then, when the contact surface 112b of the contact material 112 does not contact the surface of the substrate W and approaches, for example, about 0.1 mm to 3 mm, the electrode head 28 is stopped. Next, the plating solution is supplied from the plating solution supply pipe 102 to the inside of the electrode head 28, and as shown in FIG. 12, while the plating solution is contained in the pressing material 110, the cushion material, and the contact material 112, the substrate W The inside of the plating solution chamber 100 is filled with the plating solution from the upper surface (surface to be plated).

  Then, the electrode head 28 is further lowered to bring the contact surface 112b of the contact material 112 into close contact with the surface of the substrate W as shown in FIG. Thereby, as shown in detail in FIG. 14, the contact surface 112 b of the contact material 112 is in close contact with the surface of the seed layer 7 covering the insulating layer 2 deposited on the substrate W. At this time, the cushioning material 111 having flexibility is interposed between the pressing material 110 and the contact material 112, so that the contact surface 112b of the contact material 112 is locally from the surface of the substrate W (seed layer 7). The contact surface 112b of the contact material 112 can be brought into close contact with the surface of the substrate W without any gaps. In this state, the cathode electrode 88 is connected to the cathode of the plating power source 114 and the anode 98 is connected to the anode of the plating power source 114 to perform plating on the surface of the substrate W (the surface of the seed layer 7).

  As described above, when plating is performed while the contact surface 112b of the contact material 112 having a large number of through holes 112a penetrating vertically is brought into close contact with the seed layer 7 on the surface of the substrate W, the non-wiring forming portion on the surface of the substrate W is formed. In this case, as shown in FIG. 15A, the surface of the seed layer 7 is in direct contact with the contact surface 112b of the contact material 112 except for a portion facing the through hole 112a provided in the contact material 112, and this contact The plating solution is removed from the part. For this reason, as shown in FIGS. 15B to 15C, a columnar plating film (columnar portion) 6a grown along the through hole 112a is formed and grown. Then, after plating, as shown in FIG. 15 (d), the columnar plating film 6 a is extracted from the through hole 112 a of the contact material 112 so that the columnar plating film 6 a remains on the surface of the seed layer 7.

  On the other hand, for example, in the wiring formation portion on the surface of the substrate W, the interior of the wiring recess such as the trench 4 formed in the insulating layer 2 is formed on the contact surface 112b of the contact material 112 as shown in FIG. There is no contact, and the inside of the trench 4 and the like is filled with the plating solution. Therefore, as shown in FIG. 16B, first, a plating film (copper film) 6b grown so as to fill the inside of the recess for wiring such as the trench 4 is formed. When the plating film 6b reaches the contact surface 112b of the contact material 112, as shown in FIG. 16C, a columnar plating film grown on the surface of the plating film 6b along the through hole 112a of the contact material 112. (Columnar part) 6c is formed. Then, after plating, as shown in FIG. 16 (d), the columnar plating film 6 c is extracted from the through hole 112 a of the contact material 112, and thereby embedded in the wiring recess such as the trench 4. A columnar plating film 6c is left on the surface of 6b.

  At this time, the bases of the columnar plating films (columnar portions) 6a and 6c formed in the non-wiring forming portion and the wiring forming portion of the substrate are aligned at the same height. Further, by providing a through-hole 112a having a circular cross section with a diameter of 12 μm or less inside the contact material 112, the columnar plating films 6a and 6c formed on the surface of the substrate have a cylindrical shape with a diameter of 12 μm or less. It becomes. As a result, the cylindrical plating films 6a and 6c can be easily dropped by subsequent CMP, and the cylindrical plating film 6c is too large compared to the wiring recesses such as the trench 4 so that the wiring forming portion has a circular shape. It is possible to prevent a situation in which the columnar plating film 6c is not formed.

  23 and 24, when a plating film is formed on the surface of the substrate by plating the surface with the contact material having a linearly extending through hole in contact with the surface of the substrate, as described above. The schematic diagram of is shown. From FIG. 23 and FIG. 24, it can be seen that a plating film in which a large number of columnar plating films (columnar portions) are formed can be obtained.

  When the plating process is completed, the electrode arm part 30 is raised and turned to return to the upper part of the plating solution tray 22 and lowered to the normal position. Next, the precoat / recovery arm 32 is moved from the retracted position to a position facing the substrate W and lowered, and the plating solution remaining solution on the substrate W is recovered from the plating solution recovery nozzle 66. After the collection of the remaining liquid is completed, the precoat / collection arm 32 is returned to the retracted position, and pure water is discharged from the fixed nozzle 34 for pure water onto the central portion of the substrate W in order to rinse the plating surface of the substrate. At the same time, the substrate holder 36 is rotated at an increased speed to replace the plating solution on the surface of the substrate W with pure water. Thus, by rinsing the substrate W, when the substrate holding part 36 is lowered from the plating position B, the plating solution is prevented from splashing and the cathode electrode 88 of the cathode part 38 is prevented from being contaminated.

  After rinsing, the water washing process is started. That is, the substrate holding part 36 is lowered from the plating position B to the pretreatment / cleaning position C, and the substrate holding part 36 and the cathode part 38 are rotated while supplying pure water from the fixed nozzle 34 for pure water, and water washing is performed. To do. At this time, the sealing material 90 and the cathode electrode 88 can also be cleaned simultaneously with the substrate by pure water supplied directly to the cathode portion 38 or pure water scattered from the surface of the substrate W.

  After the water washing is completed, the drying process is started. That is, the supply of pure water from the fixed nozzle 34 is stopped, the rotation speed of the substrate holding part 36 and the cathode part 38 is increased, and the pure water on the substrate surface is shaken off by the centrifugal force and dried. At the same time, the sealing material 90 and the cathode electrode 88 are also dried. When the drying process is completed, the rotation of the substrate holding part 36 and the cathode part 38 is stopped, and the substrate holding part 36 is lowered to the substrate delivery position A. Then, the grip of the substrate W by the chuck claws 76 is released, and the substrate W is placed on the upper surface of the support arm 70. At the same time, the cup 40 is also lowered.

  Thus, the plating process and all the pre-processing and cleaning / drying processes incidental thereto are completed, and the transfer robot 14 inserts the hand into the lower part of the substrate W from the substrate loading / unloading port and lifts the substrate as it is, thereby holding the substrate. The processed substrate W is received from the unit 36. Then, the transfer robot 14 returns the processed substrate W received from the substrate holding unit 36 to the load / unload unit 10.

  Thereafter, the substrate W is transported to a CMP apparatus, and the surface of the substrate W is polished by the CMP apparatus. First, the innumerable columnar plating films (columnar portions) 6a and 6c shown in FIG. As a result, the surface of the substrate W is flattened as shown in FIG. The roots of the innumerable pillar-shaped plating films 6a and 6b are aligned at the same height. For this reason, the plating films 6a and 6b are easily removed with a relatively small force, that is, by a low-pressure and high-speed CMP process. be able to. As a result, the surface of the plating film after eliminating the innumerable columnar plating films 6a and 6c is a flat surface with less unevenness, and has a shape that is easier to polish than conventional plating films with unevenness. .

  The above example shows an example applied when the depth of the recess for wiring such as the trench 4 is relatively small. However, when the depth of the wiring recess such as the trench 4 is relatively large, the columnar plating film grows to a considerable height before the inside of the wiring recess is filled with copper or the like, and the anchor effect is strong. Since the contact between the contact material and the surface of the substrate becomes strong, the contact material may be broken when the columnar plating film is extracted from the contact material.

  FIG. 18 shows that even when the depth of the wiring recess such as the trench 4 is relatively large, the wiring recess is filled with copper or the like, and the column-shaped plating film is formed from the contact material without destroying the contact material. The example which enabled it to draw out is shown in order of a process.

  First, similarly to the above-described example, plating is performed while bringing the contact surface 112b of the contact material 112 having a large number of through holes 112a into close contact with the seed layer 7 on the surface of the substrate W, and as shown in FIG. As described above, the columnar plating film (columnar portion) 6a is formed in the non-wiring forming portion, and the plating film 6b is formed in the wiring recess such as the trench 4 so as to fill the recess. Then, if necessary, the cathode electrode 88 and the anode 98 are disconnected from the plating power source 114, and then, as shown in FIG. 18 (b), the electrode head 28 is raised to form the columnar plating film 6a as the contact material. Pull out from 112. Then, for example, at least one of the electrode head 28 or the substrate holder 36 is rotated to change the relative position between the contact surface 112 b of the contact material 112 and the surface of the substrate W.

  Next, as shown in FIG. 18C, the electrode head 28 is lowered again, and the contact surface 112b of the contact material 112 is again brought into close contact with the seed layer 7 on the surface of the substrate W, whereby a columnar plating film is formed. 6a is pushed down with the contact material 112. In this state, the cathode electrode 88 and the anode 98 are connected to the plating power source 114 to perform plating. As a result, as shown in FIG. 18 (d), a columnar shape is formed on the surface of the depressed columnar plating film 6a. A second plating film (columnar portion) 6d is formed, and at the same time, a plating film 6b buried in a wiring recess such as the trench 4 is grown. In this example, the column-shaped plating film 6a is pushed down with the contact material 112 and the operation of further plating is performed once, but this operation may be repeated a plurality of times as necessary. Thereby, the level difference of the unevenness on the surface of the plating film can be gradually reduced without breaking the contact material 112.

  As shown in FIG. 18D, the plating film 6b formed in the wiring recess such as the trench 4 reaches the surface of the contact material 112, and further, the contact material 112 is formed on the surface of the plating film 6b. When the columnar plating film 6c grown along the through-hole 112a is formed, the plating is finished. Then, after plating, the columnar plated films 6c and 6d are pulled out from the through holes 112a of the contact material 112 as shown in FIG.

  According to this method, the height of the columnar plating films 6c and 6d formed on the surface of the plating film becomes relatively low when the wiring recess such as the trench 4 is completely filled with the plating film such as a copper film. The columnar plating films 6 c and 6 d can be pulled out from the contact material 112 without breaking the contact material 112. In the case of this method, the plating film 6b formed in the wiring recess such as the trench 4 becomes dense, and the plating films 6a and 6d formed in the non-wiring forming portion are formed when the columnar plating film 6a is tilted. Since some gaps are created, voids may be included. However, there is no problem because the plating film formed in the non-wiring forming portion is scraped off by the next CMP process.

  When the plating power source 114 that can arbitrarily change the direction of the flowing current is used as in the plating apparatus of this embodiment and the etching function for etching the plating film is provided, the number of platings is several. The plating film may be removed by etching every time plating is completed.

  That is, for example, as shown in FIG. 18B, the electrode head 28 is raised, and the columnar plating film 6a is pulled out from the contact material 112, as shown in FIG. Then, the plating films 6a and 6b are etched through the plating power source 114 so that the cathode electrode 88 becomes the anode and the anode 98 becomes the cathode. When etching is performed in this manner, electricity concentrates and flows at a sharp point. Therefore, the columnar plating film 6a has priority over the plating film 6b embedded in the wiring recess such as the trench 4 or the like. As a result of the etching, as shown in FIG. 19B, even if the columnar plating film 6a disappears, most of the plating film 6b embedded in the wiring recess such as the trench 4 remains.

  Then, when the column-shaped plating film 6a disappears, the next plating process is repeated a plurality of times as necessary, thereby gradually reducing the unevenness of the unevenness of the plating film surface without breaking the contact material 112. When the recesses for wiring such as the trench 4 are all filled with a plating film such as a copper film, the height of the columnar plating film formed on the surface of the plating film is relatively low, The columnar plating film can be pulled out from the contact material without breaking.

  As shown in FIG. 20 (a), for example, when the columnar plating film 6a has a cylindrical shape with a diameter d, the anode and the plating film on the surface of the substrate are formed under conditions that etch the plating film isotropically. Electrolysis (reverse electrolysis) opposite to that at the time of plating is performed in the middle, and the plating film is etched by an amount corresponding to half the thickness of the columnar plating film 6a, that is, d / 2. As shown, the columnar plating film 6a can be removed by etching without depending on its height.

  FIG. 21 shows a main part of a plating apparatus according to another embodiment of the present invention. In the plating apparatus of this example, as shown in FIG. 21 (a), the contact material 112 having a large number of through holes 112a inside is used alone to be positioned between the anode 98 and the substrate W, and FIG. As shown in b), the contact surface (lower surface) 112b of the contact material 112 is brought into close contact with the surface of the substrate W, that is, the surface of the seed layer 7 covering the insulating layer 2 to perform plating.

FIG. 22 shows a main part of a plating apparatus according to still another embodiment of the present invention. In the plating apparatus of this example, the contact material 112 having a large number of through holes 112a therein is directly attached to the lower surface of the pressing material 110 without using a cushion material.
In the above example, copper is used as the wiring material, but copper alloy, silver, or a silver alloy may be used instead of copper.

It is a figure which shows the example which forms a copper wiring by plating process in order of a process. It is a top view which shows the whole substrate processing apparatus provided with the plating apparatus of embodiment of this invention. It is a top view which shows the plating apparatus of embodiment of this invention. It is an expanded sectional view of the board | substrate holding | maintenance part and electrode part of the plating apparatus shown in FIG. It is a front view which shows the precoat and collection | recovery arm of the plating apparatus shown in FIG. It is a top view of the board | substrate holding part of the plating apparatus shown in FIG. It is the BB sectional view taken on the line of FIG. It is CC sectional view taken on the line of FIG. It is a top view of the electrode part of the plating apparatus shown in FIG. FIG. 10 is a sectional view taken along line D-D in FIG. 9. It is a top view of the electrode arm part of the plating apparatus shown in FIG. It is sectional drawing at the time of the electroplating which shows schematically the electrode head and board | substrate holding | maintenance part of the plating apparatus shown in FIG. It is sectional drawing at the time of the electrolytic etching which shows schematically the electrode head and board | substrate holding | maintenance part of the plating apparatus shown in FIG. It is a principal part enlarged view which expands and shows the principal part of FIG. It is a figure which shows the process in which a plating film is formed in a non-wiring formation part by the plating method of embodiment of this invention. It is a figure which shows the process in which a plating film is formed in a wiring formation part by the plating method of embodiment of this invention. It is a figure which shows the process of removing the column-shaped plating film formed by the plating method of embodiment of this invention by CMP process. It is a figure which shows the process in which a plating film is formed on the surface of a board | substrate by the plating method of other embodiment of this invention. It is a figure which shows the process of removing a column-shaped plating film by an etching in the middle of plating. It is a figure which shows the process of removing a column-shaped plating film by isotropic etching in the middle of plating. It is sectional drawing which shows the principal part of the plating apparatus of other embodiment of this invention. It is sectional drawing which shows the principal part of the plating apparatus of other embodiment of this invention. It is the schematic diagram which looked at the plating film obtained by plating on the surface, contacting the contact material which has the through-hole extended linearly inside on the surface from diagonally upward. It is the schematic diagram which looked at the plating film obtained by plating on this surface, making the contact material which has the through-hole extended linearly inside contact the surface of a board | substrate from the front.

Explanation of symbols

2 Insulating layer 4 Trench (recess for wiring)
5 Barrier layers 6a to 6d Plating film 6 Copper film 7 Seed layer 12 Plating apparatus 16 Plating solution tank 18 Plating solution supply equipment 20 Substrate processing unit 22 Plating solution tray 28 Electrode head 30 Electrode arm unit 32 Precoat / recovery arm 34 Fixed nozzle 36 Substrate holding portion 38 Cathode portion 68 Substrate stage 70 Support arm 76 Chuck claw 88 Cathode electrode 90 Sealing material 94 Housing 94b Plating solution outlet 98 Anode 100 Plating solution chamber 102 Plating solution supply pipe 104a Plating solution introduction port 104 Plating solution introduction tube 106 Plating solution discharge pipe 110 Pressing material 111 Cushioning material 112 Contact material 112a Through hole 114 Plating power supply 122 Pressing mechanism

Claims (21)

A substrate holder for holding the substrate;
A cathode portion provided with a cathode electrode that is brought into contact with and energized with the substrate held by the substrate holding portion;
An anode disposed at a position facing the surface of the substrate;
A contact material is provided between the substrate held by the substrate holding portion and the anode so as to be movable in a direction in which the substrate comes into contact with and separates from the anode, and has a through hole extending linearly along the moving direction. A plating apparatus characterized by   The plating apparatus according to claim 1, further comprising a pressing mechanism that presses a contact surface of the contact material facing the surface of the substrate held by the substrate holding portion against the surface of the substrate.   The plating apparatus according to claim 1, wherein a pressing material that presses the contact surface of the contact material against a surface of the substrate is disposed between the contact material and the anode.   The cushion material which has the softness | flexibility which presses the said contact surface of the said contact material uniformly on the surface of a board | substrate between the said contact material and the said anode is arrange | positioned. The plating apparatus as described. The through holes provided in the contact material have a circular cross section with a diameter of 12 μm or less and are distributed at a density of 1.0 × 10 ^{5 to} 1.0 × 10 ⁹ pieces / cm ^2. The plating apparatus according to any one of claims 1 to 4.   The plating apparatus according to claim 1, wherein an Ra value of the surface roughness of the contact surface of the contact material is 1 μm or less.   The plating apparatus according to claim 1, wherein the contact material is made of an insulator.   The plating apparatus according to claim 7, wherein the insulator is polycarbonate, ceramics, carbon, polyester, glass, silicon, a resist material, or a fluororesin.   The plating apparatus according to claim 1, further comprising an etching mechanism that etches a plating film formed on the surface of the substrate.   The plating apparatus according to claim 1, wherein the through hole provided in the contact material has a tapered shape in which a cross-sectional area gradually decreases in a direction away from the contact surface. Prepare a substrate with a wiring recess on the surface,
An anode is disposed at a position facing the surface of the substrate,
Between the substrate and the anode, a contact material having a through-hole extending linearly therein is pressed against the surface of the substrate and the contact surface facing the surface of the substrate is disposed,
A plating method comprising plating a surface of a substrate by flowing a plating current between the anode and the surface of the substrate while filling a plating solution between the anode and the substrate.   The plating method according to claim 11, wherein the surface of the substrate is plated in a state where the contact material is stationary with respect to the substrate.   The plating method according to claim 11 or 12, wherein after plating the surface of the substrate, the surface of the substrate is plated again by changing a relative position of the contact surface of the contact material with respect to the surface of the substrate. .   The plating method according to claim 13, wherein after the contact material is separated from the surface of the substrate, the relative position of the contact surface of the contact material with respect to the surface of the substrate is changed.   The plating method according to claim 13 or 14, wherein the plating film formed on the surface of the substrate is etched before the surface of the substrate is plated again.   The plating method according to claim 15, wherein the etching is performed while filling the plating between the anode and the substrate and reversing the polarities of the surfaces of the anode and the substrate from those during plating.   The plating method according to claim 16, wherein the etching is performed by separating the contact material from the surface of the substrate.   A substrate processing comprising: plating a substrate by the plating method according to claim 11, polishing a substrate surface with a CMP apparatus, and removing an excessive plating film other than a wiring portion. Method.   The substrate is plated by the plating method according to claim 11, the columnar portion of the substrate surface is removed by an etching device to form a flat surface, and then the substrate surface is polished by a CMP device. A method for treating a substrate, characterized in that an excess plating film other than the wiring portion is removed.   Plating having innumerable columnar portions grown linearly along the through-hole obtained by plating on the surface of a contact material having a through-hole extending linearly inside while contacting the surface of the substrate film. 21. The plating film according to claim 20, wherein the columnar shape is a columnar shape having a diameter of 12 μm or less.

Images