JP2006518270A - マイクロ構造及びその製造方法 - Google Patents
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- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
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- B—PERFORMING OPERATIONS; TRANSPORTING
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Abstract
Description
本願は、2002年10月31日出願の出願番号60/422,530号を有する「MEMS用マイクロエアチャンネルの製造における非相容性の問題を解決するための構造材料としての二酸化珪素(Silicon-di-oxide as a Structural Material to Resolve Incompatibility Issues in the Fabrication of Micro-Airchannels for MEMS)」というタイトルの同時係属の米国仮出願の優先権を主張するものであり、この出願は全て本願に援用される。
米国政府は、本発明において払込済ライセンスを持つことができ、限られた状況下で米国政府の国立科学財団(認可番号DMI−9980804)によって与えられるMDAの条件により提供されるような適当な条件で他者に使用を許可することを特許権者に要求する権利がある。
Claims (24)
- 基板と、
前記基板上に配置されたオーバーコート層と、
前記オーバーコート層の少なくとも一部分内にある空気領域と、
内側表面で前記空気領域の少なくとも一部分と係合し、外側表面で前記オーバーコート層と係合するフレーミング材料層と、
を含むマイクロ構造。 - 前記オーバーコート層が、ポリイミド、ポリノルボルネン、エポキシド、ポリアリーレンエーテル、ポリアリーレン、無機ガラス及びこれらの組み合わせから選択される、請求項1のマイクロ構造。
- 前記フレーミング材料が、SiO2、Si3N4、SiOxNy、ここでxは0.01乃至2であり、yは0.01乃至1.33である、及びAl2Oから選択される、請求項1のマイクロ構造。
- 前記空気領域は高さが約0.01乃至100マイクロメートルであり、幅が約0.1乃至10,000マイクロメートルである、請求項1のマイクロ構造。
- 前記フレーミング材料の厚さが約0.001乃至10マイクロメートルである、請求項1のマイクロ構造。
- 前記フレーミング材料の厚さが約0.01乃至2マイクロメートルである、請求項1のマイクロ構造。
- 前記オーバーコート層内に配置された複数の空気領域を更に含み、該複数の空気領域の各々の前記フレーミング材料層が該フレーミング材料層の内側表面で各空気領域の少なくとも一部分と係合し、前記フレーミング材料層の外側表面で前記オーバーコート層と係合する、請求項1のマイクロ構造。
- 前記空気領域が前記オーバーコート層内の複数の高さレベルに配置される、請求項7のマイクロ構造。
- 第1の空気領域が、第2の空気領域の上方で前記第2の空気領域とほぼ一列に並んで配置される、請求項8のマイクロ構造。
- 第1の空気領域が、第2の空気領域の上方で前記第2の空気領域からほぼオフセットして配置される、請求項8のマイクロ構造。
- 基板と、
基板上に配置されたオーバーコート層と、
前記オーバーコート層の少なくとも一部分内に配置された犠牲ポリマー層と、
内側表面で前記犠牲ポリマー層の少なくとも一部分と係合し、外側表面で前記オーバーコート層と係合するフレーミング材料層と、
を含むマイクロ構造。 - 前記オーバーコート層が、ポリイミド、ポリノルボルネン、エポキシド、ポリアリーレンエーテル、パリレン、無機ガラス及びこれらの組み合わせから選択される、請求項11のマイクロ構造。
- 前記フレーミング材料が、SiO2、Si3N4、SiOxNy、ここでxは0.01乃至2であり、yは0.01乃至1.33である、及びAl2Oから選択される、請求項11のマイクロ構造。
- 前記犠牲層ポリマーが、ポリイミド、ポリノルボルネン、エポキシド、ポリアリーレンエーテル、パリレン、無機ガラス及びこれらの組み合わせから選択される、請求項11のマイクロ構造。
- 前記犠牲層ポリマーが前記オーバーコートに対して溶媒非相容性である、請求項11のマイクロ構造。
- 前記犠牲層ポリマーは高さが約0.01乃至100マイクロメートルであり、幅が約0.1乃至10,000マイクロメートルである、請求項11のマイクロ構造。
- 前記フレーミング材料の厚さが約0.001乃至10マイクロメートルである、請求項11のマイクロ構造。
- 犠牲ポリマー層が配置された基板を提供することと、
前記犠牲ポリマー層の少なくとも一部分の上にフレーミング材料を配置することと、
前記フレーミング材料の上にオーバーコート層を配置し、前記フレーミング材料が前記犠牲ポリマー層を前記オーバーコート層から実質的に分離させることと、
を含むマイクロ構造の製造方法。 - 前記犠牲層を除去して前記オーバーコート層内に空気領域を画定することを更に含み、前記フレーミング材料が該フレーミング材料の内側表面で前記空気領域の少なくとも一部分と係合しており、前記フレーミング材料の外側表面で前記オーバーコート層と係合している、請求項18の方法。
- 前記オーバーコート層が、ポリイミド、ポリノルボルネン、エポキシド、ポリアリーレンエーテル、パリレン、無機ガラス及びこれらの組み合わせから選択される、請求項18の方法。
- 前記フレーミング材料が、SiO2、Si3N4、SiOxNy、ここでxは0.01乃至2であり、yは0.01乃至1.33である、及びAl2Oから選択される、請求項18の方法。
- 前記犠牲層ポリマーが、ポリイミド、ポリノルボルネン、エポキシド、ポリアリーレンエーテル、パリレン、無機ガラス及びこれらの組み合わせから選択される、請求項18の方法。
- 基板、オーバーコート層、前記オーバーコート層内の一領域にある犠牲ポリマー層、及び前記犠牲ポリマー層の少なくとも一部分と前記オーバーコート層との間にあるフレーミング材料を有する構造を提供することと、
前記犠牲ポリマー層を除去し、犠牲材料によって画定された領域内に空気領域を形成することと、
を含むマイクロ構造の製造方法。 - 前記犠牲層ポリマーが前記オーバーコートに対して溶媒非相容性である、請求項23の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US42253002P | 2002-10-31 | 2002-10-31 | |
PCT/US2003/034198 WO2004041918A2 (en) | 2002-10-31 | 2003-10-28 | Microstructures and methods of fabrication thereof |
US10/695,591 US7182875B2 (en) | 2002-10-31 | 2003-10-28 | Microstructures and methods of fabrication thereof |
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JP2006518270A true JP2006518270A (ja) | 2006-08-10 |
JP2006518270A5 JP2006518270A5 (ja) | 2007-02-22 |
JP4606168B2 JP4606168B2 (ja) | 2011-01-05 |
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Application Number | Title | Priority Date | Filing Date |
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JP2004550154A Expired - Fee Related JP4606168B2 (ja) | 2002-10-31 | 2003-10-28 | マイクロ構造及びその製造方法 |
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US (2) | US7182875B2 (ja) |
EP (1) | EP1562742A4 (ja) |
JP (1) | JP4606168B2 (ja) |
KR (1) | KR101078113B1 (ja) |
AU (1) | AU2003284197A1 (ja) |
WO (1) | WO2004041918A2 (ja) |
Cited By (1)
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JP2010248373A (ja) * | 2009-04-15 | 2010-11-04 | Sumitomo Bakelite Co Ltd | 樹脂組成物およびそれを用いた半導体装置 |
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US6622519B1 (en) * | 2002-08-15 | 2003-09-23 | Velocys, Inc. | Process for cooling a product in a heat exchanger employing microchannels for the flow of refrigerant and product |
US7294934B2 (en) * | 2002-11-21 | 2007-11-13 | Intel Corporation | Low-K dielectric structure and method |
US7294734B2 (en) * | 2003-05-02 | 2007-11-13 | Velocys, Inc. | Process for converting a hydrocarbon to an oxygenate or a nitrile |
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- 2003-10-28 AU AU2003284197A patent/AU2003284197A1/en not_active Abandoned
- 2003-10-28 JP JP2004550154A patent/JP4606168B2/ja not_active Expired - Fee Related
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US8637137B2 (en) | 2014-01-28 |
WO2004041918A2 (en) | 2004-05-21 |
US20040131829A1 (en) | 2004-07-08 |
JP4606168B2 (ja) | 2011-01-05 |
AU2003284197A1 (en) | 2004-06-07 |
KR101078113B1 (ko) | 2011-10-28 |
AU2003284197A8 (en) | 2004-06-07 |
US20100112277A1 (en) | 2010-05-06 |
WO2004041918A3 (en) | 2005-02-10 |
EP1562742A2 (en) | 2005-08-17 |
KR20050070077A (ko) | 2005-07-05 |
EP1562742A4 (en) | 2008-08-06 |
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