JP2006511929A - 複数の金属化平面を持つ集積キャパシタンス構造を有する半導体構成要素 - Google Patents
複数の金属化平面を持つ集積キャパシタンス構造を有する半導体構成要素 Download PDFInfo
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- JP2006511929A JP2006511929A JP2003586939A JP2003586939A JP2006511929A JP 2006511929 A JP2006511929 A JP 2006511929A JP 2003586939 A JP2003586939 A JP 2003586939A JP 2003586939 A JP2003586939 A JP 2003586939A JP 2006511929 A JP2006511929 A JP 2006511929A
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- metallization
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- semiconductor component
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- 238000001465 metallisation Methods 0.000 title claims abstract description 142
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims description 56
- 239000003990 capacitor Substances 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (11)
- 半導体構成要素にして
− 半導体基板と前記半導体基板上に形成された絶縁層を有し、そして
− 前記絶縁層中に形成されたキャパシタンス構造(K)を有し、前記キパシタンス構造(K)は縦方向に互いから離れて、前記基板表面に本質的に並行に延長し、おのおのが二つの接続線の一つに電気的に接続された、二つ以上の金属化平面(1、2、3、6、8)を有するものにおいて、
− 前記金属化平面(1、2、3、6、8)の一つが格子状形態をなし、
− 第一金属化平面(1、2、3、6、8)が、一つ以上の電気的伝導性の非等質構造(1aから1l;10aから10b)に電気的に接続されて、部分的に前記金属化平面(1、2、3、6、8)間を、そして部分的に前記格子状金属化平面(1、2、3、6、8)のカットアウト内に伸びていること
を特徴とする半導体構成要素。 - 前記非等質構造(1aから1l;10aから10b)が棒形状であること
を特徴とする請求項1で請求の前記半導体構成要素。 - 前記非等質構造(1aから1l;10aから10b)が前記金属化平面(1、2、3、6、8)に対してほぼ直角に配列され、一つ以上の金属領域(2a、3a...;2l、3l;6aから6h)と、特に棒構造での、前記金属領域(2a、3a...;2l、3l;6aから6h)と前記第一金属化平面(1、2、3、6、8)との間に形成される電気的伝導性接続領域(5aから5l)を有すること
を特徴とする請求項1および2で請求の前記半導体構成要素。 - 前記非等質構造(1aから1l;10aから10b)が前記格子状金属化平面(1、2、3、6、8)中のカットアウト中に配列されて、前記格子状金属化平面(1、2、3、6、8)と前記金属領域(2a、3a...;2l、3l;6aから6h)が一水平面中に配列されること
を特徴とする請求項3で請求の前記半導体構成要素。 - 第二格子状金属化平面(3)が前記第一格子状金属化平面(2)に関して合同に配列され、かつ前記第一格子状金属化平面(2)から離れて配列され、前記二つの格子状金属化平面(2、3)が電気的接続(4;4l)によって接続されていること
を特徴とする前に述べた請求項の一つで請求の前記半導体構成要素。 - 前記第二格子状金属化平面(3)中の前記カットアウトが、前記第一格子状金属化平面(2)中のカットアウトと同じ寸法であるか、このカットアウトより大なる寸法であるか、またはこのカットアウトより小なる寸法であること
を特徴とする請求項5で請求の前記半導体構成要素。 - 前記非等質構造(1aから1l)が、一つ以上の第二金属領域(3aから3l)および一つ以上の第二接続領域(4aから4l)を有し、前記金属領域(3aから3l)と前記接続領域(4aから4l)が交互に配列され、かつ前記二つの金属領域(3aから3l)が同じまたは異なる寸法を有すること
を特徴とする請求項6で請求の前記半導体構成要素。 - 前記電気的接続(4;4l)が接続平面中に形成され、前記接続平面(4)が前記第二格子状金属化平面(2、3)に本質的に整列してパタン化され得、かつ前記接続平面(4)中の前記カットアウトが前記格子状金属化平面(2、3)と同じ寸法、より大なる寸法、またはより小なる寸法にあること
を特徴とする請求項5で請求の前記半導体構成要素。 - 前記キャパシタンス構造(K)がさらなる格子状金属化平面(8)を有し、これが他の金属化平面(1、2、3、6)に平行に配列され、前記第一金属化平面(1)の前記第一格子状金属化平面(2)から離れた側上に形成されていること
を特徴とする前に述べた請求項の一つで請求の前記半導体構成要素。 - 一つ以上の第二電気的伝導性非等質構造(10a、10b)が第一金属化平面(1)上の前記第一非等質構造から離れた側に形成されること、そしてこの側に形成された前記格子状金属化平面(8)中のカットアウトに少なくとも部分的に伸びること
を特徴とする請求項9で請求の前記半導体構成要素。 - 非等質構造(1aから1l)と格子状金属化平面(2、3、6)が、前記金属化平面(1)の両側の上に前記金属化平面(1)に関して対称的に縦方向に配列されること
を特徴とする前に述べた請求項の一つで請求の前記半導体構成要素。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10217566A DE10217566A1 (de) | 2002-04-19 | 2002-04-19 | Halbleiterbauelement mit integrierter, eine Mehrzahl an Metallisierungsebenen aufweisende Kapazitätsstruktur |
PCT/DE2003/001304 WO2003090283A2 (de) | 2002-04-19 | 2003-04-17 | Halbleiterbauelement mit integrierter, eine mehrzahl an metallisierungsebenen aufweisende kapazitätsstruktur |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006511929A true JP2006511929A (ja) | 2006-04-06 |
JP4225921B2 JP4225921B2 (ja) | 2009-02-18 |
Family
ID=29224605
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003586939A Expired - Fee Related JP4225921B2 (ja) | 2002-04-19 | 2003-04-17 | 複数の金属化平面を持つ集積キャパシタンス構造を有する半導体構成要素 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7061746B2 (ja) |
EP (1) | EP1497869B1 (ja) |
JP (1) | JP4225921B2 (ja) |
DE (1) | DE10217566A1 (ja) |
WO (1) | WO2003090283A2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007273689A (ja) * | 2006-03-31 | 2007-10-18 | Denso Corp | 半導体装置 |
JP2009206427A (ja) * | 2008-02-29 | 2009-09-10 | Fujitsu Ltd | キャパシタ |
JP2010141314A (ja) * | 2008-12-09 | 2010-06-24 | Magnachip Semiconductor Ltd | キャパシタ構造体 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005340518A (ja) * | 2004-05-27 | 2005-12-08 | Sanyo Electric Co Ltd | 容量素子 |
JP2006179620A (ja) * | 2004-12-21 | 2006-07-06 | Sharp Corp | 半導体集積回路 |
DE102005045060B4 (de) * | 2005-09-21 | 2007-07-05 | Infineon Technologies Ag | Integrierte Schaltungsanordnung mit mehreren Leitstrukturlagen und Verfahren zu ihrer Herstellung |
DE102005046734B4 (de) * | 2005-09-29 | 2011-06-16 | Infineon Technologies Ag | Halbleiterbauelement mit integrierter Kapazitätsstruktur |
TWI271754B (en) * | 2006-02-16 | 2007-01-21 | Jmicron Technology Corp | Three-dimensional capacitor structure |
US7990676B2 (en) * | 2007-10-10 | 2011-08-02 | Advanced Micro Devices, Inc. | Density-conforming vertical plate capacitors exhibiting enhanced capacitance and methods of fabricating the same |
US8378450B2 (en) | 2009-08-27 | 2013-02-19 | International Business Machines Corporation | Interdigitated vertical parallel capacitor |
US20110261500A1 (en) * | 2010-04-22 | 2011-10-27 | Freescale Semiconductor, Inc. | Back end of line metal-to-metal capacitor structures and related fabrication methods |
WO2015191641A1 (en) * | 2014-06-10 | 2015-12-17 | Smart Hybrid Systems Incorporated | High energy density capacitor with micrometer structures and nanometer components |
CA3122602C (en) * | 2019-10-11 | 2023-04-04 | 10644137 Canada Inc. | Metacapacitors and power-electronic converters for power-electronic systems |
Family Cites Families (17)
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US4802951A (en) * | 1986-03-07 | 1989-02-07 | Trustees Of Boston University | Method for parallel fabrication of nanometer scale multi-device structures |
US5208725A (en) * | 1992-08-19 | 1993-05-04 | Akcasu Osman E | High capacitance structure in a semiconductor device |
US5583359A (en) * | 1995-03-03 | 1996-12-10 | Northern Telecom Limited | Capacitor structure for an integrated circuit |
DE19623517C1 (de) * | 1996-06-12 | 1997-08-21 | Siemens Ag | MOS-Transistor für biotechnische Anwendungen |
US6298500B1 (en) * | 1996-12-19 | 2001-10-09 | Jimmie L. Sollami | Ventilated toilet seat |
US6542352B1 (en) * | 1997-12-09 | 2003-04-01 | Daniel Devoe | Ceramic chip capacitor of conventional volume and external form having increased capacitance from use of closely spaced interior conductive planes reliably connecting to positionally tolerant exterior pads through multiple redundant vias |
JP3407020B2 (ja) * | 1998-05-25 | 2003-05-19 | Necエレクトロニクス株式会社 | 半導体装置 |
US6972436B2 (en) * | 1998-08-28 | 2005-12-06 | Cree, Inc. | High voltage, high temperature capacitor and interconnection structures |
DE19840032C1 (de) * | 1998-09-02 | 1999-11-18 | Siemens Ag | Halbleiterbauelement und Herstellungsverfahren dazu |
US6208500B1 (en) * | 1998-11-25 | 2001-03-27 | Microchip Technology Incorporated | High quality factor capacitor |
JP3489729B2 (ja) * | 1999-11-19 | 2004-01-26 | 株式会社村田製作所 | 積層コンデンサ、配線基板、デカップリング回路および高周波回路 |
US20020072189A1 (en) * | 1999-12-17 | 2002-06-13 | Haroun Baher S. | Via capacitor |
US6297524B1 (en) * | 2000-04-04 | 2001-10-02 | Philips Electronics North America Corporation | Multilayer capacitor structure having an array of concentric ring-shaped plates for deep sub-micron CMOS |
US6411492B1 (en) * | 2000-05-24 | 2002-06-25 | Conexant Systems, Inc. | Structure and method for fabrication of an improved capacitor |
US6570210B1 (en) * | 2000-06-19 | 2003-05-27 | Koninklijke Philips Electronics N.V. | Multilayer pillar array capacitor structure for deep sub-micron CMOS |
DE10217565A1 (de) * | 2002-04-19 | 2003-11-13 | Infineon Technologies Ag | Halbleiterbauelement mit integrierter gitterförmiger Kapazitätsstruktur |
US6885539B1 (en) * | 2003-12-02 | 2005-04-26 | Presidio Components, Inc. | Single layer capacitor |
-
2002
- 2002-04-19 DE DE10217566A patent/DE10217566A1/de not_active Ceased
-
2003
- 2003-04-17 JP JP2003586939A patent/JP4225921B2/ja not_active Expired - Fee Related
- 2003-04-17 US US10/511,189 patent/US7061746B2/en not_active Expired - Lifetime
- 2003-04-17 WO PCT/DE2003/001304 patent/WO2003090283A2/de active Search and Examination
- 2003-04-17 EP EP03724870A patent/EP1497869B1/de not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007273689A (ja) * | 2006-03-31 | 2007-10-18 | Denso Corp | 半導体装置 |
JP2009206427A (ja) * | 2008-02-29 | 2009-09-10 | Fujitsu Ltd | キャパシタ |
US8107215B2 (en) | 2008-02-29 | 2012-01-31 | Fujitsu Limited | Capacitor |
JP2010141314A (ja) * | 2008-12-09 | 2010-06-24 | Magnachip Semiconductor Ltd | キャパシタ構造体 |
Also Published As
Publication number | Publication date |
---|---|
WO2003090283A2 (de) | 2003-10-30 |
EP1497869A2 (de) | 2005-01-19 |
JP4225921B2 (ja) | 2009-02-18 |
EP1497869B1 (de) | 2012-03-14 |
DE10217566A1 (de) | 2003-11-13 |
WO2003090283A3 (de) | 2004-01-15 |
US20050219790A1 (en) | 2005-10-06 |
US7061746B2 (en) | 2006-06-13 |
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