JP2006509219A5 - - Google Patents

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Publication number
JP2006509219A5
JP2006509219A5 JP2005508481A JP2005508481A JP2006509219A5 JP 2006509219 A5 JP2006509219 A5 JP 2006509219A5 JP 2005508481 A JP2005508481 A JP 2005508481A JP 2005508481 A JP2005508481 A JP 2005508481A JP 2006509219 A5 JP2006509219 A5 JP 2006509219A5
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JP
Japan
Prior art keywords
optical device
target
imaging
reflectometer
polarization
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Application number
JP2005508481A
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English (en)
Japanese (ja)
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JP2006509219A (ja
JP4746987B2 (ja
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Priority claimed from PCT/US2003/038784 external-priority patent/WO2004053426A1/en
Publication of JP2006509219A publication Critical patent/JP2006509219A/ja
Publication of JP2006509219A5 publication Critical patent/JP2006509219A5/ja
Application granted granted Critical
Publication of JP4746987B2 publication Critical patent/JP4746987B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005508481A 2002-12-05 2003-12-05 散乱計測を用いてオーバレイ誤差を検出する装置および方法 Expired - Fee Related JP4746987B2 (ja)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US43131402P 2002-12-05 2002-12-05
US60/431,314 2002-12-05
US44097003P 2003-01-17 2003-01-17
US60/440,970 2003-01-17
US44949603P 2003-02-22 2003-02-22
US60/449,496 2003-02-22
US49852403P 2003-08-27 2003-08-27
US60/498,524 2003-08-27
US50409303P 2003-09-19 2003-09-19
US60/504,093 2003-09-19
PCT/US2003/038784 WO2004053426A1 (en) 2002-12-05 2003-12-05 Apparatus and methods for detecting overlay errors using scatterometry

Publications (3)

Publication Number Publication Date
JP2006509219A JP2006509219A (ja) 2006-03-16
JP2006509219A5 true JP2006509219A5 (enExample) 2007-01-25
JP4746987B2 JP4746987B2 (ja) 2011-08-10

Family

ID=32512688

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005508481A Expired - Fee Related JP4746987B2 (ja) 2002-12-05 2003-12-05 散乱計測を用いてオーバレイ誤差を検出する装置および方法

Country Status (4)

Country Link
EP (1) EP1570232B1 (enExample)
JP (1) JP4746987B2 (enExample)
AU (1) AU2003298003A1 (enExample)
WO (1) WO2004053426A1 (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
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US7317531B2 (en) 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US7541201B2 (en) 2000-08-30 2009-06-02 Kla-Tencor Technologies Corporation Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
US7440105B2 (en) 2002-12-05 2008-10-21 Kla-Tencor Technologies Corporation Continuously varying offset mark and methods of determining overlay
US7019835B2 (en) * 2004-02-19 2006-03-28 Molecular Imprints, Inc. Method and system to measure characteristics of a film disposed on a substrate
US20080144036A1 (en) 2006-12-19 2008-06-19 Asml Netherlands B.V. Method of measurement, an inspection apparatus and a lithographic apparatus
US7791727B2 (en) 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US7532305B2 (en) * 2006-03-28 2009-05-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method using overlay measurement
US7391513B2 (en) * 2006-03-29 2008-06-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method using overlay measurement quality indication
US7616313B2 (en) * 2006-03-31 2009-11-10 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US7898662B2 (en) 2006-06-20 2011-03-01 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
FR2902877B1 (fr) * 2006-06-22 2008-09-12 Centre Nat Rech Scient Procede de caracterisation de l'anisotropie d'un milieu diffusant et dispositif pour la mise en oeuvre d'un tel procede
US7564555B2 (en) * 2006-08-15 2009-07-21 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
WO2008035685A1 (fr) * 2006-09-19 2008-03-27 Olympus Medical Systems Corporation Dispositif de mesure de polarisation
US7570358B2 (en) * 2007-03-30 2009-08-04 Asml Netherlands Bv Angularly resolved scatterometer, inspection method, lithographic apparatus, lithographic processing cell device manufacturing method and alignment sensor
SG152187A1 (en) * 2007-10-25 2009-05-29 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
WO2010013325A1 (ja) * 2008-07-30 2010-02-04 株式会社ニレコ 分光測光装置
US8329360B2 (en) * 2009-12-04 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus of providing overlay
NL2010734A (en) 2012-05-29 2013-12-02 Asml Netherlands Bv Metrology method and apparatus, substrate, lithographic system and device manufacturing method.
JP6102230B2 (ja) * 2012-12-07 2017-03-29 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
TWI479141B (zh) * 2012-12-27 2015-04-01 Metal Ind Res & Dev Ct Ellipsometry and polarization modulation ellipsometry method for the
US9784690B2 (en) * 2014-05-12 2017-10-10 Kla-Tencor Corporation Apparatus, techniques, and target designs for measuring semiconductor parameters
TWI755987B (zh) * 2015-05-19 2022-02-21 美商克萊譚克公司 具有用於疊對測量之形貌相位控制之光學系統
US10451412B2 (en) 2016-04-22 2019-10-22 Kla-Tencor Corporation Apparatus and methods for detecting overlay errors using scatterometry
WO2019068459A1 (en) 2017-10-05 2019-04-11 Stichting Vu METROLOGY SYSTEM AND METHOD FOR DETERMINING A CHARACTERISTIC OF ONE OR MORE STRUCTURES ON A SUBSTRATE
US10801953B2 (en) * 2019-01-11 2020-10-13 Kla-Tencor Corporation Semiconductor metrology based on hyperspectral imaging
US11640117B2 (en) 2019-06-25 2023-05-02 Kla Corporation Selection of regions of interest for measurement of misregistration and amelioration thereof
EP4111495A4 (en) * 2020-04-15 2024-04-10 KLA Corporation MISREGISTRATION TARGET WITH DEVICE-SCALED FEATURES FOR MEASURING MISREGISTRATION OF SEMICONDUCTOR DEVICES
US11454894B2 (en) 2020-09-14 2022-09-27 Kla Corporation Systems and methods for scatterometric single-wavelength measurement of misregistration and amelioration thereof
US11378394B1 (en) * 2020-12-11 2022-07-05 Kla Corporation On-the-fly scatterometry overlay metrology target
CN113296365B (zh) * 2020-12-29 2024-04-02 杭州广立微电子股份有限公司 一种测量套刻误差的方法及测试结构
US12131959B2 (en) 2021-04-22 2024-10-29 Kla Corporation Systems and methods for improved metrology for semiconductor device wafers
KR102750985B1 (ko) * 2023-03-29 2025-01-09 (주) 오로스테크놀로지 파장 가변형 광섬유 광원 및 이를 구비한 오버레이 측정 장치

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US5712707A (en) * 1995-11-20 1998-01-27 International Business Machines Corporation Edge overlay measurement target for sub-0.5 micron ground rules
US6483580B1 (en) 1998-03-06 2002-11-19 Kla-Tencor Technologies Corporation Spectroscopic scatterometer system
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EP1314198B1 (en) * 2000-08-30 2017-03-08 KLA-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US6486954B1 (en) 2000-09-01 2002-11-26 Kla-Tencor Technologies Corporation Overlay alignment measurement mark
IL138552A (en) 2000-09-19 2006-08-01 Nova Measuring Instr Ltd Lateral shift measurement using an optical technique
US7139083B2 (en) 2000-09-20 2006-11-21 Kla-Tencor Technologies Corp. Methods and systems for determining a composition and a thickness of a specimen
WO2002065545A2 (en) * 2001-02-12 2002-08-22 Sensys Instruments Corporation Overlay alignment metrology using diffraction gratings
US6699624B2 (en) * 2001-02-27 2004-03-02 Timbre Technologies, Inc. Grating test patterns and methods for overlay metrology
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US7804994B2 (en) * 2002-02-15 2010-09-28 Kla-Tencor Technologies Corporation Overlay metrology and control method
US6778275B2 (en) * 2002-02-20 2004-08-17 Micron Technology, Inc. Aberration mark and method for estimating overlay error and optical aberrations
KR20060014063A (ko) * 2003-05-28 2006-02-14 가부시키가이샤 니콘 위치 정보 계측 방법 및 장치, 그리고 노광 방법 및 장치

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