JP2006503185A - 銅層の２段階原子層沈着 - Google Patents

銅層の２段階原子層沈着 Download PDF

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Publication number
JP2006503185A
JP2006503185A JP2004545398A JP2004545398A JP2006503185A JP 2006503185 A JP2006503185 A JP 2006503185A JP 2004545398 A JP2004545398 A JP 2004545398A JP 2004545398 A JP2004545398 A JP 2004545398A JP 2006503185 A JP2006503185 A JP 2006503185A
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JP
Japan
Prior art keywords
copper
oxide layer
precursor
copper oxide
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2004545398A
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English (en)
Japanese (ja)
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JP2006503185A5 (https=
Inventor
佳秀 千崎
Original Assignee
アヴィザ テクノロジー インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アヴィザ テクノロジー インコーポレイテッド filed Critical アヴィザ テクノロジー インコーポレイテッド
Publication of JP2006503185A publication Critical patent/JP2006503185A/ja
Publication of JP2006503185A5 publication Critical patent/JP2006503185A5/ja
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2004545398A 2002-10-17 2003-10-17 銅層の２段階原子層沈着 Abandoned JP2006503185A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US41963302P 2002-10-17 2002-10-17
US10/686,898 US6933011B2 (en) 2002-10-17 2003-10-15 Two-step atomic layer deposition of copper layers
PCT/US2003/032843 WO2004036624A2 (en) 2002-10-17 2003-10-17 Two-step atomic layer deposition of copper layers

Publications (2)

Publication Number Publication Date
JP2006503185A true JP2006503185A (ja) 2006-01-26
JP2006503185A5 JP2006503185A5 (https=) 2006-08-10

Family

ID=32930282

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004545398A Abandoned JP2006503185A (ja) 2002-10-17 2003-10-17 銅層の２段階原子層沈着

Country Status (5)

Country Link
US (1) US6933011B2 (https=)
EP (1) EP1558783A2 (https=)
JP (1) JP2006503185A (https=)
AU (1) AU2003287156A1 (https=)
WO (1) WO2004036624A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013219380A (ja) * 2007-06-04 2013-10-24 Tokyo Electron Ltd 成膜方法及び成膜装置

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60330896D1 (de) * 2002-11-15 2010-02-25 Harvard College Atomlagenabscheidung (ald) mit hilfe von metallamidinaten
US20050227007A1 (en) 2004-04-08 2005-10-13 Bradley Alexander Z Volatile copper(I) complexes for deposition of copper films by atomic layer deposition
US9029189B2 (en) * 2003-11-14 2015-05-12 President And Fellows Of Harvard College Bicyclic guanidines, metal complexes thereof and their use in vapor deposition
WO2006015200A1 (en) 2004-07-30 2006-02-09 E.I. Dupont De Nemours And Company Copper (ii) complexes for deposition of copper films by atomic layer deposition
US20060110525A1 (en) * 2004-11-19 2006-05-25 Robert Indech Nanotechnological processing to a copper oxide superconductor increasing critical transition temperature
US7692222B2 (en) * 2006-11-07 2010-04-06 Raytheon Company Atomic layer deposition in the formation of gate structures for III-V semiconductor
US8758867B2 (en) 2007-09-17 2014-06-24 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés George Claude Neutral ligand containing precursors and methods for deposition of a metal containing film
DE102007058571B4 (de) * 2007-12-05 2012-02-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrat mit einer Kupfer enthaltenden Beschichtung und Verfahren zu deren Herstellung mittels Atomic Layer Deposition und Verwendung des Verfahrens
US20130143402A1 (en) * 2010-08-20 2013-06-06 Nanmat Technology Co., Ltd. Method of forming Cu thin film
US9005705B2 (en) 2011-09-14 2015-04-14 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Method for the production of a substrate having a coating comprising copper, and coated substrate and device prepared by this method
US9583337B2 (en) 2014-03-26 2017-02-28 Ultratech, Inc. Oxygen radical enhanced atomic-layer deposition using ozone plasma
EP3663433A1 (en) * 2018-12-04 2020-06-10 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Method and system for depositing a p-type oxide layer on a substrate
CN112670173A (zh) * 2020-12-29 2021-04-16 光华临港工程应用技术研发(上海)有限公司 用于形成铜金属层的方法及半导体结构
CN115874165A (zh) * 2022-11-18 2023-03-31 深圳市原速光电科技有限公司 一种铜薄膜的低温原子层沉积制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4977516A (en) * 1987-04-10 1990-12-11 Shepherd James E Data acquisition device for balancing rotating components of large machinery
US4997722A (en) * 1989-07-10 1991-03-05 Edward Adler Composition and method for improving adherence of copper foil to resinous substrates
US4997516A (en) * 1989-07-10 1991-03-05 Edward Adler Method for improving adherence of copper foil to resinous substrates
US5925403A (en) * 1994-01-31 1999-07-20 Matsushita Electric Works, Ltd. Method of coating a copper film on a ceramic substrate
US5753309A (en) * 1995-12-19 1998-05-19 Surface Tek Specialty Products, Inc. Composition and method for reducing copper oxide to metallic copper
WO2001088972A1 (en) * 2000-05-15 2001-11-22 Asm Microchemistry Oy Process for producing integrated circuits

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013219380A (ja) * 2007-06-04 2013-10-24 Tokyo Electron Ltd 成膜方法及び成膜装置

Also Published As

Publication number Publication date
AU2003287156A1 (en) 2004-05-04
AU2003287156A8 (en) 2004-05-04
US6933011B2 (en) 2005-08-23
US20040175502A1 (en) 2004-09-09
WO2004036624A2 (en) 2004-04-29
EP1558783A2 (en) 2005-08-03
WO2004036624A3 (en) 2004-10-21

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