JP2006352052A - Chip-shaped led - Google Patents

Chip-shaped led Download PDF

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Publication number
JP2006352052A
JP2006352052A JP2005206164A JP2005206164A JP2006352052A JP 2006352052 A JP2006352052 A JP 2006352052A JP 2005206164 A JP2005206164 A JP 2005206164A JP 2005206164 A JP2005206164 A JP 2005206164A JP 2006352052 A JP2006352052 A JP 2006352052A
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JP
Japan
Prior art keywords
led
melting point
case
chip
epoxy resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005206164A
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Japanese (ja)
Inventor
Shinichi Kobayashi
真一 小林
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Individual
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Individual
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Publication date
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Priority to JP2005206164A priority Critical patent/JP2006352052A/en
Publication of JP2006352052A publication Critical patent/JP2006352052A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

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  • Led Device Packages (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To resolve problems (1) because a prior LED chip is not well in radiation state, the temperature of the LED chip rises and it leads to breakage when supplying a large amount current; (2) because the temperature rise involves a drop of an light emitting efficiency, a high brightness can not be obtained, and when running a large mount of current in series and a radiation board is needed, each of them should be insulated; (3) because silicon and epoxy resin have moisture permeability, its life is short when used outdoor directly; and (4) because the melting point of silicon and epoxy resin is 260°C or lower, control of its soldering is strict. <P>SOLUTION: In order to obtain an LED of a high brightness, a case having a good reflectance is located, and an insulating layer of a good heat transfer is provided under an electrode. In addition, an LED bare chip is mounted on a case with a radiation board fitted, and a low melting point glass of a melting point higher than 300°C is filled into it. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

屋外向け及び高輝度を有する発光ダイオード（ＬＥＤ）  Light emitting diode (LED) for outdoor use and high brightness

図１及び図２の様に従来のＬＥＤはアルミナセラミックケースにシリコン又はエポキシ樹脂を充填したもの及びリードフレームがエポキシ樹脂に覆われているものが用いられている。  As shown in FIGS. 1 and 2, the conventional LED uses an alumina ceramic case filled with silicon or epoxy resin and a lead frame covered with epoxy resin.

シリコン及びエポキシ樹脂は透湿性が有り、直接屋外での使用に当り劣化が早い。  Silicone and epoxy resins are moisture permeable and are subject to rapid deterioration when used directly outdoors.

アルミナセラミックケース及びリードフレーム方式では反射効率良くない上、放熱効率が良くないため大量の電流を流せないので高輝度に出来ない。  The alumina ceramic case and the lead frame method have poor reflection efficiency, and the heat radiation efficiency is not good, so that a large amount of current cannot be flown, so high brightness cannot be achieved.

課題を解決しようとする手段Means to solve the problem

本発明は図４、図５の如くシリコン及びエポキシ樹脂の代わりに低融点ガラスを用いる。  In the present invention, low melting point glass is used instead of silicon and epoxy resin as shown in FIGS.

ケースは低融点ガラスを収めるに耐える、反射効率の良い物質及び構造を用いる。  The case is made of a material and structure having a high reflection efficiency that can withstand the low melting point glass.

電極には熱伝導率の良い金属を用いる。  A metal with good thermal conductivity is used for the electrode.

放熱板を設ける。電極と放熱板の間の薄い絶縁層は絶縁が良く、熱伝導を良くするために熱伝導の良いアルミナセラミック粒子等を封止用ガラスに混ぜた物にする。  Provide a heat sink. The thin insulating layer between the electrode and the heat sink has good insulation, and in order to improve heat conduction, a ceramic glass or the like having good heat conduction is mixed with sealing glass.

発明の効果The invention's effect

樹脂に比べて耐湿に優れる低融点ガラスを用いることによって屋外での使用に当り長寿命の発光が得られる。  By using a low melting point glass that is superior in moisture resistance compared to a resin, light emission with a long lifetime can be obtained when used outdoors.

放熱効果を良くする事によって、多くの電流を流せる又反射効率の良い構造のケースによって高輝度が得られる。  By improving the heat dissipation effect, high brightness can be obtained by a case having a structure capable of flowing a large amount of current and having good reflection efficiency.

放熱板と電極を絶縁することによって、１個の放熱板上で多数のＬＥＤの直列接続が可能になる。  By insulating the heat sink and the electrodes, a large number of LEDs can be connected in series on one heat sink.

本発明でフリップチップＬＥＤの場合は図４の如く構成されている。
不透明で反射率の良いセラミックで出来たケース１に電極４及び５を設け、さらに放熱板７を設ける。電極と放熱板の間に薄い絶縁層６を設ける。
これにフリップチップＬＥＤベアチップ３を接続し、低融点ガラス２を充填する。In the present invention, the flip chip LED is configured as shown in FIG.
Electrodes 4 and 5 are provided on a case 1 made of an opaque and highly reflective ceramic, and a heat sink 7 is further provided. A thin insulating layer 6 is provided between the electrode and the heat sink.
The flip chip LED bare chip 3 is connected to this, and the low melting point glass 2 is filled.

図５の如く、ワイヤーボンド形ＬＥＤチップの場合、金線１１で接続する。
さらに蛍光発色剤１２を設けることによって、青色ＬＥＤを効率の良い白色ＬＥＤに出来る。この形態は図４と互換性を保つ。In the case of a wire bond type LED chip as shown in FIG.
Further, by providing the fluorescent color former 12, the blue LED can be converted into an efficient white LED. This configuration is compatible with FIG.

図４に於いてケース１が金属の場合は電極４及び５の間に絶縁層を設ける。  In FIG. 4, when case 1 is a metal, an insulating layer is provided between electrodes 4 and 5.

図５に於いてケース８が透明、半透明或いは反射率の悪い場合、反射層９を設ける。
この層は反射率の良い金属メッキ又は金属板或いは耐熱性の金又は銀色塗料（セラミックを含む）で構成されている。In FIG. 5, when the case 8 is transparent, translucent, or has a low reflectance, a reflective layer 9 is provided.
This layer is composed of a highly reflective metal plating or metal plate, or heat-resistant gold or silver paint (including ceramic).

図５に於いて電極１３は放熱板と電極が共用されている場合を示す。  In FIG. 5, the electrode 13 shows the case where a heat sink and an electrode are shared.

図３に於いてケースが円形を示すが電極構造によって長方形にする。  In FIG. 3, the case is circular, but it is made rectangular by the electrode structure.

図４及び５に於いて、直径を１〜２ｍｍにすることによって、高密度に放熱器に取り付けられるため、小型で高輝度の照明器。又小型のむらのない照明器を作れる  In FIGS. 4 and 5, since the diameter is set to 1 to 2 mm, the illuminator is small and has high brightness because it can be attached to the radiator with high density. Also, you can make a small and uniform illuminator

本発明により屋外の照明及び明るいディスプレー装置に利用される。即ち照明器として自動車、室内照明器及び外灯のランプとして利用される。ディスプレー装置として屋外広告塔等に利用される。  The present invention is used for outdoor lighting and bright display devices. That is, it is used as a lamp for automobiles, indoor illuminators and outdoor lamps as illuminators. Used as an outdoor advertising tower as a display device.

従来のセラミックケースによるＬＥＤチップの断面図を示す。  Sectional drawing of the LED chip by the conventional ceramic case is shown. 従来のリードフレームによるＬＥＤチップの断面図を示す。  Sectional drawing of the LED chip by the conventional lead frame is shown. 本発明の平面図を示す。  The top view of this invention is shown. 本発明のフリップチップＬＥＤベアチップをＬＥＤチップにしたの断面図を示す。  Sectional drawing which made the flip chip LED bare chip of this invention into the LED chip is shown. 本発明のワイヤーボンドＬＥＤベアチップの場合及び白色ＬＥＤチップの断面図を示す。  Sectional drawing of the case of the wire bond LED bare chip of this invention and a white LED chip is shown.

符号の説明Explanation of symbols

１．本発明によるＬＥＤチップのケース
２．本発明によるＬＥＤチップの低融点ガラス
３．フリップチップＬＥＤベアチップ
４．本発明による電極
５．本発明による電極
６．本発明による薄い絶縁層
７．本発明による放熱板
８．本発明に於ける変形したケース
９．本発明による光の反射層
１０．ワイヤーボンド形ＬＥＤベアチップ
１１．本発明による金細線
１２．本発明による蛍光発色剤
１３．本発明による放熱板を兼ねた電極
１４．本発明による電極
１５．本発明による絶縁層
１６．本発明による熱伝導の良い接着剤
２０．従来のセラミックケース方式によるケース
２１．従来のシリコン又はエポキシ樹脂
２２．ＬＥＤベアチップ
２３．従来の電極
２４．従来の金細線
２５．従来のリードフレーム式ＬＥＤベアチップ
２６．従来のリードフレーム電極
２７．従来のエポキシ樹脂
２８．従来の金細線1. 1. Case of LED chip according to the present invention 2. Low melting point glass of LED chip according to the present invention. 3. Flip chip LED bare chip 4. Electrode according to the invention 5. Electrode according to the present invention 6. Thin insulating layer according to the present invention 7. Heat sink according to the present invention 8. Deformed case in the present invention. 9. Light reflecting layer according to the present invention 10. Wire bond type LED bare chip 11. Gold wire according to the present invention 12. Fluorescent color formers according to the invention 13. Electrode serving also as a heat sink according to the present invention 15. Electrode according to the present invention 15. Insulating layer according to the invention. 20. Adhesive with good thermal conductivity according to the present invention Case 21 by conventional ceramic case method Conventional silicon or epoxy resin22. LED bare chip 23. Conventional electrode 24. Conventional gold wire 25. Conventional lead frame type LED bare chip 26. Conventional lead frame electrode 27. Conventional epoxy resin 28. Conventional gold wire

Claims (1)

本文記載のように反射効率の良いケースに、電極を設けさらに放熱板及び熱伝導率の良い絶縁層を設けた器にＬＥＤベアチップを取付け、この上に低融点ガラスを充填し、白色にするため蛍光発色剤層を設けたＬＥＤチップ  In order to make the case white by filling the LED bare chip in a container with electrodes and a heat sink and an insulating layer with good thermal conductivity, and filling it with low melting point glass as described in the text. LED chip provided with a fluorescent color former layer
JP2005206164A 2005-06-17 2005-06-17 Chip-shaped led Pending JP2006352052A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005206164A JP2006352052A (en) 2005-06-17 2005-06-17 Chip-shaped led

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005206164A JP2006352052A (en) 2005-06-17 2005-06-17 Chip-shaped led

Publications (1)

Publication Number Publication Date
JP2006352052A true JP2006352052A (en) 2006-12-28

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005206164A Pending JP2006352052A (en) 2005-06-17 2005-06-17 Chip-shaped led

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009033081A (en) * 2007-07-25 2009-02-12 Yiguang Electronic Ind Co Ltd Light emitting diode device
WO2011060618A1 (en) * 2009-11-19 2011-05-26 深圳市光峰光电技术有限公司 Method and structure for encapsulating solid-state lighting chip and light sources using the encapsulating structure

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009033081A (en) * 2007-07-25 2009-02-12 Yiguang Electronic Ind Co Ltd Light emitting diode device
US7872277B2 (en) 2007-07-25 2011-01-18 Everlight Electronics Co., Ltd. Light emitting diode device
WO2011060618A1 (en) * 2009-11-19 2011-05-26 深圳市光峰光电技术有限公司 Method and structure for encapsulating solid-state lighting chip and light sources using the encapsulating structure

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