JP2006339594A5 - - Google Patents

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Publication number
JP2006339594A5
JP2006339594A5 JP2005165768A JP2005165768A JP2006339594A5 JP 2006339594 A5 JP2006339594 A5 JP 2006339594A5 JP 2005165768 A JP2005165768 A JP 2005165768A JP 2005165768 A JP2005165768 A JP 2005165768A JP 2006339594 A5 JP2006339594 A5 JP 2006339594A5
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JP
Japan
Prior art keywords
pamphlet
examples
japanese patent
international publication
international
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2005165768A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006339594A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005165768A priority Critical patent/JP2006339594A/ja
Priority claimed from JP2005165768A external-priority patent/JP2006339594A/ja
Priority to PCT/JP2006/309578 priority patent/WO2006132055A1/ja
Priority to KR1020077025527A priority patent/KR20080012864A/ko
Priority to CNA2006800195183A priority patent/CN101189706A/zh
Priority to EP06732559A priority patent/EP1890321A1/en
Priority to TW095118884A priority patent/TW200712185A/zh
Publication of JP2006339594A publication Critical patent/JP2006339594A/ja
Priority to US11/951,540 priority patent/US20080086950A1/en
Publication of JP2006339594A5 publication Critical patent/JP2006339594A5/ja
Withdrawn legal-status Critical Current

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JP2005165768A 2005-06-06 2005-06-06 半導体用研磨剤 Withdrawn JP2006339594A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2005165768A JP2006339594A (ja) 2005-06-06 2005-06-06 半導体用研磨剤
PCT/JP2006/309578 WO2006132055A1 (ja) 2005-06-06 2006-05-12 半導体用研磨剤
KR1020077025527A KR20080012864A (ko) 2005-06-06 2006-05-12 반도체용 연마제
CNA2006800195183A CN101189706A (zh) 2005-06-06 2006-05-12 半导体用研磨剂
EP06732559A EP1890321A1 (en) 2005-06-06 2006-05-12 Semiconductor abrasive
TW095118884A TW200712185A (en) 2005-06-06 2006-05-26 Abrasive agent for semiconductor
US11/951,540 US20080086950A1 (en) 2005-06-06 2007-12-06 Semiconductor polishing compound

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005165768A JP2006339594A (ja) 2005-06-06 2005-06-06 半導体用研磨剤

Publications (2)

Publication Number Publication Date
JP2006339594A JP2006339594A (ja) 2006-12-14
JP2006339594A5 true JP2006339594A5 (enExample) 2008-04-10

Family

ID=37498261

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005165768A Withdrawn JP2006339594A (ja) 2005-06-06 2005-06-06 半導体用研磨剤

Country Status (7)

Country Link
US (1) US20080086950A1 (enExample)
EP (1) EP1890321A1 (enExample)
JP (1) JP2006339594A (enExample)
KR (1) KR20080012864A (enExample)
CN (1) CN101189706A (enExample)
TW (1) TW200712185A (enExample)
WO (1) WO2006132055A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004010487A1 (ja) * 2002-07-22 2004-01-29 Seimi Chemical Co., Ltd. 半導体用研磨剤、その製造方法及び研磨方法
US8759216B2 (en) * 2006-06-07 2014-06-24 Cabot Microelectronics Corporation Compositions and methods for polishing silicon nitride materials
KR20090049067A (ko) * 2006-09-11 2009-05-15 아사히 가라스 가부시키가이샤 반도체 집적 회로 장치용 연마제, 연마 방법 및 반도체 집적 회로 장치의 제조 방법
JP5157908B2 (ja) * 2006-09-13 2013-03-06 旭硝子株式会社 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法
DE102007062572A1 (de) * 2007-12-22 2009-06-25 Evonik Degussa Gmbh Ceroxid und kolloidales Siliciumdioxid enthaltende Dispersion
KR101075491B1 (ko) 2009-01-16 2011-10-21 주식회사 하이닉스반도체 반도체 소자의 제조방법
US8551887B2 (en) 2009-12-22 2013-10-08 Air Products And Chemicals, Inc. Method for chemical mechanical planarization of a copper-containing substrate
JP4784694B1 (ja) * 2010-05-27 2011-10-05 横浜ゴム株式会社 液状凝固剤およびタイヤパンクシール材セット
CN103189457B (zh) * 2010-09-08 2015-12-09 巴斯夫欧洲公司 用于化学机械抛光电子、机械和光学器件用基底材料的含水抛光组合物和方法
JP5333571B2 (ja) * 2010-12-24 2013-11-06 日立化成株式会社 研磨液及びこの研磨液を用いた基板の研磨方法
JP6051632B2 (ja) * 2011-07-20 2016-12-27 日立化成株式会社 研磨剤及び基板の研磨方法
US10287457B2 (en) * 2012-11-02 2019-05-14 Lawrence Livermore National Security, Llc Polishing slurry preventing agglomeration of charged colloids without loss of surface activity
CN104726028A (zh) * 2013-12-18 2015-06-24 安集微电子（上海）有限公司 一种化学机械抛光液及其使用方法
CN105778774A (zh) * 2014-12-23 2016-07-20 安集微电子（上海）有限公司 一种化学机械抛光液
KR102514041B1 (ko) * 2015-12-09 2023-03-24 삼성전자주식회사 반도체 소자 제조 방법
JP6602720B2 (ja) * 2016-04-04 2019-11-06 グローバルウェーハズ・ジャパン株式会社 半導体基板の保護膜形成方法
CN107369618B (zh) * 2017-07-07 2020-02-21 上海华虹宏力半导体制造有限公司 晶圆的平坦化方法
WO2019043890A1 (ja) * 2017-08-31 2019-03-07 株式会社Sumco 半導体ウェーハの製造方法
US10759970B2 (en) * 2018-12-19 2020-09-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same
US10763119B2 (en) * 2018-12-19 2020-09-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
US6432828B2 (en) * 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
JP2002198331A (ja) * 2000-12-26 2002-07-12 Jsr Corp 研磨方法
DE60332881D1 (de) * 2002-04-30 2010-07-15 Hitachi Chemical Co Ltd Poliermittel und Polierverfahren
WO2004010487A1 (ja) * 2002-07-22 2004-01-29 Seimi Chemical Co., Ltd. 半導体用研磨剤、その製造方法及び研磨方法
JP2004123931A (ja) * 2002-10-03 2004-04-22 Hitachi Chem Co Ltd 研磨液及び研磨方法
JP2004273547A (ja) * 2003-03-05 2004-09-30 Kao Corp 研磨速度選択比向上剤

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