JP2006332609A5 - - Google Patents

Download PDF

Info

Publication number
JP2006332609A5
JP2006332609A5 JP2006112082A JP2006112082A JP2006332609A5 JP 2006332609 A5 JP2006332609 A5 JP 2006332609A5 JP 2006112082 A JP2006112082 A JP 2006112082A JP 2006112082 A JP2006112082 A JP 2006112082A JP 2006332609 A5 JP2006332609 A5 JP 2006332609A5
Authority
JP
Japan
Prior art keywords
conductive layer
organic compound
phase
data
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006112082A
Other languages
English (en)
Japanese (ja)
Other versions
JP5089074B2 (ja
JP2006332609A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2006112082A priority Critical patent/JP5089074B2/ja
Priority claimed from JP2006112082A external-priority patent/JP5089074B2/ja
Publication of JP2006332609A publication Critical patent/JP2006332609A/ja
Publication of JP2006332609A5 publication Critical patent/JP2006332609A5/ja
Application granted granted Critical
Publication of JP5089074B2 publication Critical patent/JP5089074B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2006112082A 2005-04-28 2006-04-14 記憶装置 Expired - Fee Related JP5089074B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006112082A JP5089074B2 (ja) 2005-04-28 2006-04-14 記憶装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005132816 2005-04-28
JP2005132816 2005-04-28
JP2006112082A JP5089074B2 (ja) 2005-04-28 2006-04-14 記憶装置

Publications (3)

Publication Number Publication Date
JP2006332609A JP2006332609A (ja) 2006-12-07
JP2006332609A5 true JP2006332609A5 (fr) 2009-05-28
JP5089074B2 JP5089074B2 (ja) 2012-12-05

Family

ID=37553921

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006112082A Expired - Fee Related JP5089074B2 (ja) 2005-04-28 2006-04-14 記憶装置

Country Status (1)

Country Link
JP (1) JP5089074B2 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5252827B2 (ja) * 2006-04-28 2013-07-31 株式会社半導体エネルギー研究所 記憶素子
JP2007324314A (ja) * 2006-05-31 2007-12-13 Univ Of Yamanashi メモリ素子、データ記録方法及びｉｃタグ
JP5291894B2 (ja) * 2007-05-23 2013-09-18 国立大学法人山梨大学 メモリ素子、データ記録方法及びｉｃタグ
US7692975B2 (en) 2008-05-09 2010-04-06 Micron Technology, Inc. System and method for mitigating reverse bias leakage
CN102231424B (zh) * 2011-06-24 2014-04-30 清华大学 相变存储单元及相变存储器

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61280046A (ja) * 1985-06-06 1986-12-10 Nec Corp 光記録方式
JP2815101B2 (ja) * 1991-06-10 1998-10-27 シャープ株式会社 不揮発性記録装置
JP3201863B2 (ja) * 1993-03-23 2001-08-27 シャープ株式会社 不揮発性記録装置およびその製造方法
JP4074719B2 (ja) * 1999-01-08 2008-04-09 大日本印刷株式会社 情報記録媒体
JP2001291594A (ja) * 2000-04-07 2001-10-19 Canon Inc 導電性液晶素子
JP2002170685A (ja) * 2000-11-29 2002-06-14 Canon Inc 導電性液晶素子及びこれを用いた有機エレクトロルミネッセンス素子
JP4585209B2 (ja) * 2003-03-19 2010-11-24 大日本印刷株式会社 有機双安定性メモリ装置
JP4883381B2 (ja) * 2004-03-29 2012-02-22 大日本印刷株式会社 液晶性有機半導体材料およびそれを用いた有機半導体構造物

Similar Documents

Publication Publication Date Title
US8424175B2 (en) Process for fabricating piezoelectrically actuated ultrananocrystalline diamond tip array integrated with ferroelectric or phase change media for high-density memory
Garcia et al. Inside story of ferroelectric memories
JP2006332609A5 (fr)
Waser et al. Pushing towards the digital storage limit
KR101584099B1 (ko) 자성층을 구비한 트랙 및 이를 포함하는 자성소자
JP5321991B2 (ja) 磁気メモリー素子及びその駆動方法
US8371128B2 (en) Thermal management with electrocaloric effect layer
JP5057254B2 (ja) 磁気メモリー素子、その駆動方法及び不揮発性記憶装置
SG135056A1 (en) Data storage device using two types of storage medium
US8488377B2 (en) Mass storage device with solid-state memory components capable of increased endurance
JP2012146727A5 (fr)
WO2008123307A1 (fr) Dispositif d'enregistrement/reproduction d'information
TW201103016A (en) Systems and methods for tiered non-volatile storage
CN104115131B (zh) 存储控制器、数据存储装置以及存储器的控制方法
JP2012146726A5 (fr)
JP2016009753A5 (fr)
EP1688940A3 (fr) Support d'enregistrement ferroélectrique et son procédé d'enregistrement
JP2006080247A5 (fr)
WO2009037910A1 (fr) Mémoire vive magnétique, son procédé d'écriture, et élément à effet magnétorésistif
ATE528762T1 (de) Schneller remanenter resistiver ferroelektrischer speicher
CN105977258B (zh) 一种高性能非易失性铁电晶体管存储器制备
WO2021035799A1 (fr) Moyen de stockage efficace pour enregistreur
CN110534143A (zh) 一种基于磁性格明子的赛道存储器的多电极写入方法
Dolinšek et al. A thermal memory cell
US20150097254A1 (en) Memory element, method of manufacturing the same, and memory device