JP2006319201A5 - - Google Patents

Download PDF

Info

Publication number
JP2006319201A5
JP2006319201A5 JP2005141555A JP2005141555A JP2006319201A5 JP 2006319201 A5 JP2006319201 A5 JP 2006319201A5 JP 2005141555 A JP2005141555 A JP 2005141555A JP 2005141555 A JP2005141555 A JP 2005141555A JP 2006319201 A5 JP2006319201 A5 JP 2006319201A5
Authority
JP
Japan
Prior art keywords
substrate
processing chamber
cooling gas
gas supply
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005141555A
Other languages
Japanese (ja)
Other versions
JP2006319201A (en
JP4498210B2 (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2005141555A priority Critical patent/JP4498210B2/en
Priority claimed from JP2005141555A external-priority patent/JP4498210B2/en
Publication of JP2006319201A publication Critical patent/JP2006319201A/en
Publication of JP2006319201A5 publication Critical patent/JP2006319201A5/ja
Application granted granted Critical
Publication of JP4498210B2 publication Critical patent/JP4498210B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Claims (2)

複数枚の基板を保持した基板保持体を収容して複数枚の基板を処理する処理室と、前記処理室周りに設置されて前記基板を加熱するヒータユニットと、
前記処理室内に収容された前記基板保持体の基板保持領域よりも高い位置に噴出口が位置するように配置されており、この噴出口が前記処理室の天井に向けて冷却ガスを流すように開口されている冷却ガス供給手段と、
この冷却ガス供給手段と前記基板を挟んで対向する位置に、前記処理室内に収容された少なくとも前記ボートの基板載置領域に噴出孔が位置するように配置されており、この噴出孔は前記基板の主面に対して水平方向に冷却ガスを流すように開口されている冷却ガス供給具と、前記処理室の下部に配置された排気口によって前記処理室を排気する排気手段と、
を備えていることを特徴とする基板処理装置。
A processing chamber that houses a substrate holder holding a plurality of substrates and processes the plurality of substrates; a heater unit that is installed around the processing chamber and heats the substrates;
The processing is arranged so as ejection opening is located at a position higher than the substrate holding area of the room to the contained the substrate holding member, so that the spout is flowing cooling gas toward the ceiling of the processing chamber An open cooling gas supply means;
The cooling gas supply means is disposed at a position opposite to the substrate with the substrate interposed therebetween so that an ejection hole is located at least in the substrate placement region of the boat accommodated in the processing chamber. A cooling gas supply tool that is opened so as to flow a cooling gas in a horizontal direction with respect to the main surface, and an exhaust means that exhausts the processing chamber by an exhaust port disposed at a lower portion of the processing chamber,
A substrate processing apparatus comprising:
処理室内に複数枚の基板を保持した基板保持体を収容して前記処理室周りに設置されたヒータユニットで前記基板を加熱する工程と、前記基板保持体の基板保持領域よりも高い位置に噴出口が位置するように配置されている冷却ガス供給手段の噴出口から前記処理室の天井に向けて冷却ガスを流し、この冷却ガス供給手段と前記基板を挟んで対向する位置に、前記処理室内に収容された少なくとも前記ボートの基板載置領域に噴出孔が位置するように配置されている冷却ガス供給具の噴出孔から前記基板の主面に対して水平方向に冷却ガスを流し、前記処理室の下部に配置された排気口によって前記処理室を排気する工程と、A step of accommodating a substrate holder holding a plurality of substrates in a processing chamber and heating the substrate with a heater unit installed around the processing chamber, and spraying to a position higher than the substrate holding region of the substrate holder. A cooling gas is allowed to flow from the outlet of the cooling gas supply means arranged so that the outlet is located toward the ceiling of the processing chamber, and the processing chamber is located at a position facing the cooling gas supply means across the substrate. The cooling gas is caused to flow in a horizontal direction with respect to the main surface of the substrate from the ejection holes of the cooling gas supply tool arranged so that the ejection holes are positioned at least in the substrate placement region of the boat housed in the boat. Evacuating the processing chamber by an exhaust port disposed at the bottom of the chamber;
を有することを特徴とするICの製造方法。 A method of manufacturing an IC, comprising:
JP2005141555A 2005-05-13 2005-05-13 Substrate processing apparatus and IC manufacturing method Active JP4498210B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005141555A JP4498210B2 (en) 2005-05-13 2005-05-13 Substrate processing apparatus and IC manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005141555A JP4498210B2 (en) 2005-05-13 2005-05-13 Substrate processing apparatus and IC manufacturing method

Publications (3)

Publication Number Publication Date
JP2006319201A JP2006319201A (en) 2006-11-24
JP2006319201A5 true JP2006319201A5 (en) 2008-05-29
JP4498210B2 JP4498210B2 (en) 2010-07-07

Family

ID=37539589

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005141555A Active JP4498210B2 (en) 2005-05-13 2005-05-13 Substrate processing apparatus and IC manufacturing method

Country Status (1)

Country Link
JP (1) JP4498210B2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8148271B2 (en) * 2005-08-05 2012-04-03 Hitachi Kokusai Electric Inc. Substrate processing apparatus, coolant gas supply nozzle and semiconductor device manufacturing method
JP5612266B2 (en) * 2009-02-10 2014-10-22 光洋サーモシステム株式会社 Cooling system
JP6695975B2 (en) * 2016-07-05 2020-05-20 株式会社Kokusai Electric Substrate processing apparatus, gas nozzle, and method for manufacturing semiconductor device
JP7055075B2 (en) * 2018-07-20 2022-04-15 東京エレクトロン株式会社 Heat treatment equipment and heat treatment method
CN113451183B (en) * 2020-06-03 2023-03-31 重庆康佳光电技术研究院有限公司 Wafer box

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61241916A (en) * 1985-04-18 1986-10-28 Deisuko Saiyaa Japan:Kk Semiconductor heat treatment apparatus
JPH0322523A (en) * 1989-06-20 1991-01-30 Fujitsu Ltd Vapor growth device
JP3435111B2 (en) * 1999-12-15 2003-08-11 株式会社半導体先端テクノロジーズ Semiconductor wafer heat treatment equipment

Similar Documents

Publication Publication Date Title
TWI427679B (en) Film forming apparatus and film forming method
JP2006319201A5 (en)
TW200721316A (en) Substrate processing apparatus, cooling gas feed nozzle and method for manufacturing semiconductor device
MY138431A (en) Proximity head heating method and apparatus
JP2009283699A5 (en)
TW200717660A (en) Heating device and coating and developing apparatus
TW200741159A (en) Heat processing apparatus and heat processing method
JP2005328038A5 (en)
JP2017512379A5 (en)
JP2006310857A5 (en)
JP2009524244A5 (en)
EP2088616A3 (en) Substrate mounting table, substrate processing apparatus and substrate temperature control method
TW200746339A (en) Substrate supporting unit, and substrate temperature control apparatus and method
WO2006017596A3 (en) Heated gas box for pecvd applications
JP2006269920A5 (en)
WO2011094143A3 (en) Apparatus for controlling temperature uniformity of a showerhead
JP2010080614A5 (en)
MY144358A (en) Cloths dryer
TWI400418B (en) Heat treatment apparatus and heat treatment method
JP2009543354A5 (en)
JP2007095879A5 (en)
JP2005286051A5 (en)
US20130312661A1 (en) Barrier type deposition apparatus
JP2021027069A (en) Fluid supply unit
JP2008227143A5 (en) Substrate processing apparatus and method of manufacturing semiconductor device