JP2006319201A5 - - Google Patents
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- JP2006319201A5 JP2006319201A5 JP2005141555A JP2005141555A JP2006319201A5 JP 2006319201 A5 JP2006319201 A5 JP 2006319201A5 JP 2005141555 A JP2005141555 A JP 2005141555A JP 2005141555 A JP2005141555 A JP 2005141555A JP 2006319201 A5 JP2006319201 A5 JP 2006319201A5
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- JP
- Japan
- Prior art keywords
- substrate
- processing chamber
- cooling gas
- gas supply
- substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Claims (2)
前記処理室内に収容された前記基板保持体の基板保持領域よりも高い位置に噴出口が位置するように配置されており、この噴出口が前記処理室の天井に向けて冷却ガスを流すように開口されている冷却ガス供給手段と、
この冷却ガス供給手段と前記基板を挟んで対向する位置に、前記処理室内に収容された少なくとも前記ボートの基板載置領域に噴出孔が位置するように配置されており、この噴出孔は前記基板の主面に対して水平方向に冷却ガスを流すように開口されている冷却ガス供給具と、前記処理室の下部に配置された排気口によって前記処理室を排気する排気手段と、
を備えていることを特徴とする基板処理装置。 A processing chamber that houses a substrate holder holding a plurality of substrates and processes the plurality of substrates; a heater unit that is installed around the processing chamber and heats the substrates;
The processing is arranged so as ejection opening is located at a position higher than the substrate holding area of the room to the contained the substrate holding member, so that the spout is flowing cooling gas toward the ceiling of the processing chamber An open cooling gas supply means;
The cooling gas supply means is disposed at a position opposite to the substrate with the substrate interposed therebetween so that an ejection hole is located at least in the substrate placement region of the boat accommodated in the processing chamber. A cooling gas supply tool that is opened so as to flow a cooling gas in a horizontal direction with respect to the main surface, and an exhaust means that exhausts the processing chamber by an exhaust port disposed at a lower portion of the processing chamber,
A substrate processing apparatus comprising:
を有することを特徴とするICの製造方法。 A method of manufacturing an IC, comprising:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005141555A JP4498210B2 (en) | 2005-05-13 | 2005-05-13 | Substrate processing apparatus and IC manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005141555A JP4498210B2 (en) | 2005-05-13 | 2005-05-13 | Substrate processing apparatus and IC manufacturing method |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006319201A JP2006319201A (en) | 2006-11-24 |
JP2006319201A5 true JP2006319201A5 (en) | 2008-05-29 |
JP4498210B2 JP4498210B2 (en) | 2010-07-07 |
Family
ID=37539589
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005141555A Active JP4498210B2 (en) | 2005-05-13 | 2005-05-13 | Substrate processing apparatus and IC manufacturing method |
Country Status (1)
Country | Link |
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JP (1) | JP4498210B2 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8148271B2 (en) * | 2005-08-05 | 2012-04-03 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, coolant gas supply nozzle and semiconductor device manufacturing method |
JP5612266B2 (en) * | 2009-02-10 | 2014-10-22 | 光洋サーモシステム株式会社 | Cooling system |
JP6695975B2 (en) * | 2016-07-05 | 2020-05-20 | 株式会社Kokusai Electric | Substrate processing apparatus, gas nozzle, and method for manufacturing semiconductor device |
JP7055075B2 (en) * | 2018-07-20 | 2022-04-15 | 東京エレクトロン株式会社 | Heat treatment equipment and heat treatment method |
CN113451183B (en) * | 2020-06-03 | 2023-03-31 | 重庆康佳光电技术研究院有限公司 | Wafer box |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61241916A (en) * | 1985-04-18 | 1986-10-28 | Deisuko Saiyaa Japan:Kk | Semiconductor heat treatment apparatus |
JPH0322523A (en) * | 1989-06-20 | 1991-01-30 | Fujitsu Ltd | Vapor growth device |
JP3435111B2 (en) * | 1999-12-15 | 2003-08-11 | 株式会社半導体先端テクノロジーズ | Semiconductor wafer heat treatment equipment |
-
2005
- 2005-05-13 JP JP2005141555A patent/JP4498210B2/en active Active
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