JP2005286051A5 - - Google Patents

Claims (4)

A processing chamber for processing the substrate; a heater unit for heating the processing chamber; a plurality of exhaust ports provided in the heater unit for exhausting between the processing chamber and the heater unit; and outside the heater unit. An exhaust connection port arranged; a communication path that connects the plurality of exhaust ports and the exhaust connection port; and a rectifying plate that is disposed at a portion of the communication path where the plurality of exhaust ports gather. A substrate processing apparatus. Open ends of the plurality of exhaust ports are arranged on a ceiling portion substantially directly above a cylindrical space between the processing chamber and the heater unit, and the exhaust ports are located in the center of the heater unit as they move away from the open ends. 2. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is disposed so as to go away from the shaft. And a sub-heater unit installed so as to be suspended from the ceiling unit independently of the heater unit, wherein the heater unit has a cylindrical space between the processing chamber and the heater unit, with open ends of a plurality of exhaust ports. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is disposed on the outside of the sub-heater unit. A method of manufacturing a semiconductor device using the substrate processing apparatus according to claim 1,
Storing the substrate in the processing chamber;
Heating the processing chamber with the heater unit;
Exhausting between the processing chamber and the heater unit through the plurality of exhaust ports;
The atmosphere exhausted from the plurality of exhaust ports flows through the communication path and is rectified and collected by the rectifying plate; and
And a step of causing the atmosphere rectified and gathered by the rectifying plate to flow through the exhaust connection port.