JP2006314905A - Method and apparatus for treating gas containing fluorine compound - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To remove fluorine compounds from a gas containing silicon compounds and fluorine compounds with a high decomposition rate by the use of a fluorine compound decomposition catalyst. <P>SOLUTION: A gas to-be-treated containing fluorine compounds and silicon compounds is wet-treated with water or an aqueous solution to dissolve and remove most of the silicon compounds. Since part of the silicon compounds are entrained with the gas in mist form and discharged, the silicon compounds are removed before treatment with a fluorine compound decomposition catalyst. They are typically removed by absorption decomposition with a basic oxide or hydrolytic decomposition removal with a capturing material based on activated alumina. The gas after removal of silicon compounds is passed through a fluorine compound decomposition catalyst to decompose the fluorine compounds. The method enables control of catalyst poisoning by silicon compounds and retention of the decomposition performance of the catalyst for fluorine compounds. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an exhaust gas treatment method and a treatment apparatus, and more particularly to a treatment method and a treatment apparatus for treating a gas containing a fluorine compound and a silicon compound discharged from a semiconductor or liquid crystal manufacturing factory.

In a semiconductor or liquid crystal manufacturing process, a fluorine compound gas, particularly a perfluoro compound (hereinafter referred to as PFC) is usually used for etching or cleaning. An example of a PFC is CF ₄ , C ₂ F ₆ , C ₃ F ₈ , CHF ₃ ,
There are C ₄ F ₈ , SF ₆ , NF _{3 and the} like. PFC is a global warming gas that has an infrared absorptivity several thousand to several tens of thousands times that of carbon dioxide (CO ₂ ), and its emission reduction has been determined by the World Warming Conference (COP3). In the etching or cleaning process, only a part of the introduced PFC is used, and most of the PFC is discharged as exhaust gas. Therefore, it is necessary to remove or decompose the PFC before exhausting.

  As a PFC treatment method, a catalyst method, a combustion method, a plasma method, a drug method, and the like are known. Currently, a PFC decomposition method using a catalytic method is widespread in terms of simple maintenance, low running cost, and high PFC decomposition rate. When the treatment method using a catalyst is applied to a PFC-containing gas used in a semiconductor or liquid crystal manufacturing process, the gas contains a gaseous or solid silicon compound in addition to the PFC. This measure is necessary because it is poisoned. Therefore, it has been studied to provide a water scrubber in front of the catalytic reactor to remove the silicon compound (Patent Document 1, etc.).

Japanese Patent No. 3269456 (paragraph number 0036)

  An object of the present invention is to further increase the decomposition rate of a fluorine compound in a fluorine compound-containing gas treatment method in which a silicon compound is removed in advance by providing a wet treatment apparatus such as a water scrubber, a spray tower or a packed tower. There is.

  A feature of the present invention that solves the above-described problems is that a wet treatment process in which a gas containing a fluorine compound and a silicon compound is wet treated to dissolve and remove the silicon compound, and then the fluorine compound is decomposed by contacting with a fluorine compound decomposition catalyst. A fluorine compound-containing gas treatment method having a fluorine compound decomposition step, comprising: a silicon compound removal step of removing from the gas a silicon compound discharged together with the gas after the treatment in the wet treatment step; In the method for treating a fluorine compound-containing gas, the gas that has undergone the treatment in the silicon compound removal step is treated in the fluorine compound decomposition step.

  The wet process apparatus includes a wet processing apparatus that contacts a gas containing a silicon compound and a fluorine compound with water or an aqueous solution to dissolve and remove the silicon compound, and a catalytic reaction apparatus that decomposes the fluorine compound by contacting with a catalyst. In the fluorine compound-containing gas processing apparatus in which the gas processed in the processing apparatus is processed in the catalytic reactor, silicon for removing silicon compounds accompanying the gas that has been processed in the wet processing apparatus A fluorine compound-containing gas processing apparatus comprising a compound removing apparatus, wherein the gas removed by the silicon compound removing apparatus is treated by the catalytic reactor.

  And a wet processing apparatus for dissolving and removing the silicon compound by bringing the gas containing the silicon compound and the fluorine compound into contact with water or an aqueous solution, and a catalytic reactor for decomposing the fluorine compound by contacting with the catalyst, In the fluorine compound-containing gas processing apparatus in which the gas processed by the wet processing apparatus is processed by the catalytic reaction apparatus, a silicon compound capturing material is provided inside the catalytic reaction apparatus, and the capturing material is provided. In the apparatus for treating a fluorine compound-containing gas, the gas that has passed is in contact with the catalyst.

  Furthermore, a wet processing apparatus that dissolves and removes the silicon compound by bringing a gas containing a silicon compound and a fluorine compound into contact with water or an aqueous solution, a preheating apparatus that heats the gas discharged from the wet processing apparatus to a predetermined temperature, and fluorine In a fluorine compound-containing gas processing apparatus, comprising a catalytic reactor for decomposing a compound in contact with a catalyst, wherein the gas processed by the wet processing apparatus is processed by the catalytic reactor, An apparatus for treating a fluorine compound-containing gas is characterized in that a capturing material is applied to the inner surface of the substrate and the silicon compound and the fluorine compound-containing gas are removed by contact with the capturing material.

  ADVANTAGE OF THE INVENTION According to this invention, the removal performance of a silicon compound is improved, the performance fall of a fluorine compound decomposition catalyst can be suppressed, and the decomposition rate of a fluorine compound can be raised.

The fluorine compound-containing exhaust gas used in the semiconductor or liquid crystal manufacturing process usually contains SiF ₄ as a silicon compound. SiF ₄ reacts with water or an aqueous solution in the wet processing step, and finally dissolves in water as SiO ₂ by the reaction of (Formula 1). However, some of H ₂ SiF ₆ , Si (OH) ₄ , and H ₂ SiO ₃ which are intermediate products of the reaction of (Formula 1) are discharged from the wet processing step as mist together with the fluorine compound-containing gas. The silicon compound discharged from the wet processing step undergoes thermal decomposition and reacts with HF in the gas in a preheating tank at the upper part of the subsequent catalytic reactor to produce SiF ₄ . Thereafter, the produced SiF ₄ undergoes hydrolysis on the catalyst and adheres as SiO ₂ on the catalyst.
SiF ₄ + 2H ₂ O → SiO ₂ + 4HF (Formula 1)

If the gaseous SiF ₄ generated in the preheating tank can be captured and removed before contacting the PFC decomposition catalyst, the catalyst is prevented from being poisoned by SiO ₂ and the PFC decomposition rate is increased. It is done.

In the silicon compound removal step, it is desirable to remove the silicon compound using a trapping material. As a capturing method, there is a method of absorbing and removing SiF ₄ which is an acidic gas with a basic substance, or a method of removing it as SiO ₂ by hydrolysis.

The capture material that can be absorbed and removed is preferably an oxide of alkali metal or alkaline earth metal. Examples include calcium oxide, strontium oxide, magnesium oxide, copper oxide, and sodium oxide. Among these substances, the reaction between calcium oxide and SiF ₄ is as shown in (Formula 2). In addition, HF present in the processing gas also reacts with calcium oxide as a capturing material (Formula 3) to generate calcium fluoride. Therefore, when the above-described trapping material is used for the purpose of absorption removal, it is suitable that the amount of acidic gas in the gas to be treated is small.
2CaO + SiF ₄ → SiO ₂ + CaF ₂ (Formula 2)
CaO + 2HF → H ₂ O + CaF ₂ (Formula 3)

As a capturing material for removing SiF ₄ as SiO ₂ by hydrolysis, a material having a high specific surface area and high hydrolysis performance is preferable. Examples of the material having a high specific surface area include alumina, silica, and carbon. Among the aluminas, the γ-form activated alumina is a very suitable material because it has a high specific surface area and has a high hydrolysis performance when mixed with other components. As other components to be mixed with the activated alumina, those which improve the solid acid property of the trapping material are good, for example, zirconium, cobalt, iron, titanium, nickel, cerium, tin, copper, magnesium, tungsten and the like. Of these, a mixture of at least one with alumina is recommended as a capture material.

The shape of the trapping material installed inside the silicon compound removing device or the catalytic reactor may be various shapes such as granular, extruded rod, pellet, and honeycomb. However, H ₂ SiO ₃ which is a hydrate of SiO ₂ is also included in the gas after the wet processing apparatus, and clogging may occur if the particle size of the trapping material is small. Accordingly, the granular, rod-shaped, and pellet-shaped trapping material preferably has a particle size of 1.0 mm to 5.0 mm, and more preferably 2.8 mm to 4.0 mm. Similarly, a honeycomb-shaped trapping material may be clogged if it is fine, so that a honeycomb cell size of 400 cpsi or less is desirable.

  Alternatively, a silicon compound scavenger may be applied to the inner surface of a preheating device installed at the top of the catalytic reactor. Accordingly, the silicon compound-containing gas discharged from the wet processing apparatus can be heated in the preheating apparatus coated with the trapping material, and at the same time, the silicon compound can be removed. It is desirable to promote the contact between the silicon compound-containing gas discharged from the wet processing apparatus and the trapping material applied to the inner surface of the preheating apparatus. For example, there is a method of introducing gas from the side of the preheating device so that the silicon compound-containing gas introduced into the preheating device causes a swirling flow. Other than this method, any method may be used as long as the contact between the silicon compound-containing gas and the capturing material applied to the inner surface of the preheating device is promoted.

  The treatment method and treatment apparatus of the present invention are not limited to PFC treatment and can be widely applied to treatment of fluorine compound-containing gas.

FIG. 1 is a system flow showing an example of the processing method of the present invention. This system consists of a wet treatment process, a silicon compound removal process, a fluorine compound decomposition process, and an acid gas removal process. Silicon compounds such as SiF ₄ , solids, and acid gases in the fluorine compound-containing gas discharged from the semiconductor or liquid crystal manufacturing process are removed in a wet processing step. The gas processed in the wet processing step includes a fluorine compound such as PFC and a mist-like silicon compound. This exhaust gas is introduced into the silicon compound removal step, and the silicon compound in the exhaust gas is removed by a capturing material or the like under heating conditions.

  In the exhaust gas after the silicon compound removal step, the fluorine compound is decomposed by hydrolysis in the fluorine compound decomposition step. When the fluorine compound is hydrolyzed, acid fluorides such as hydrogen fluoride, SOx, and NOx are generated. The generated acidic gas is sent to an acidic gas removing step after the fluorine compound decomposition step to be removed.

A typical reaction formula in the hydrolysis reaction of PFC which is a fluorine compound is shown below.
CF ₄ + 2H ₂ O → CO ₂ + 4HF (Formula 4)
C ₂ F ₆ + 3H ₂ O → CO + CO ₂ + 6HF (Formula 5)
CHF ₃ + H ₂ O → CO + 3HF (Formula 6)
SF ₆ + 3H ₂ O → SO ₃ + 6HF (Formula 7)
2NF ₃ + 3H ₂ O → NO + NO ₂ + 6HF (Formula 8)

  FIG. 2 shows an example of the processing apparatus of the present invention. In this example, a packed tower 120 is used as a wet processing apparatus. Moreover, the reaction tower 140 is installed as a catalytic reaction apparatus provided with the preheating apparatus 130, and the reaction tower 140 is heated by the heater 150 from the outside. A fluorine compound decomposition catalyst 141 is installed in the lower part of the reaction tower 140, and a silicon compound trap 131 is installed in the upper part thereof. A cooling chamber 160 is installed downstream of the reaction tower 140. A spray tower 170 is installed as an acidic gas removal device downstream thereof, and the gas after removal of the acidic gas is discharged using an exhaust device 180 such as an ejector or a blower.

The fluorine compound-containing gas 100 discharged from the semiconductor or liquid crystal manufacturing plant is a part of a solid compound or silicon compound such as SiF ₄ contained in the gas by the packed tower 120, such as BCl ₃ , S ₂ Cl ₂ , and WF ₆ . Acid gas is removed. The gas after the wet processing is heated to a predetermined temperature by the preheating device 130. The gas after the wet treatment contains a mist-like silicon compound that could not be removed by the packed tower 120 in addition to a fluorine compound such as PFC. H ₂ SiF ₆ in the preheater 130
Becomes SiF ₄ , and solid Si (OH) ₄ and H ₂ SiO ₃ become SiO ₂ by a dehydration reaction. The generated SiO ₂ is deposited on the silicon compound trap 131 and the gaseous SiF ₄ is removed by the trap 131 by absorption or hydrolysis removal. The fluorine compound in the gas from which the silicon compound has been removed is decomposed by the fluorine compound decomposition catalyst 141. Since the removal of the silicon compound and the decomposition reaction of the fluorine compound are hydrolysis, the reaction water 102 is vaporized in the preheating device and is passed through the fluorine compound decomposition catalyst 141 as water vapor, and the reaction of (Expression 4) to (Expression 8) is performed. Decompose. Since CO is generated in the reactions of (Equation 5) and (Equation 6), CO can be changed to CO ₂ by flowing in air 101. Further, if the CO oxidation catalyst is installed at the subsequent stage of the fluorine compound decomposition catalyst, CO can be oxidized to CO ₂ in the reaction tower. Hydrolysis of fluorine compounds such as PFC generates acidic gases such as hydrogen fluoride, SOx, and NOx. These acid gases are removed and exhausted by a spray tower 170 which is an acid gas removing device.

  As a wet processing apparatus other than the packed tower, there are a spray tower, a shelf type gas-liquid contact apparatus, a scrubber and the like. In any case, it is desirable that gas-liquid contact is sufficient. Further, when the inner diameter of the apparatus is small, the gas linear velocity in the apparatus increases, and the amount of mist accompanying the gas increases. Therefore, it is desirable to design the gas flow rate in the apparatus to be 18 m / min or less. In addition, tap water or circulating water in the apparatus can be used as inflow water to the wet treatment apparatus, but if only circulating water is used, a large amount of silicon compound dissolved in the circulating water may be discharged as mist. There is. Therefore, it is desirable to make tap water flow from the uppermost nozzle installed in the packed tower and the spray tower, and also make tap water flow into the inflow water from the shelf and the scrubber so that the silicon compound concentration in the inflow water is lowered. . Moreover, as inflow water, you may use alkaline aqueous solution etc. other than a tap water and circulating water.

The catalyst used for the decomposition of the fluorine compound is a catalyst for hydrolysis or oxidative decomposition. For example, Al and Zn, Ni, Ti, Fe, Sn, Co, Zr, Ce, Si, W, Pt,
A catalyst containing at least one selected from Pd. The catalyst component is included in the form of an oxide, metal, composite oxide or the like. In particular, a catalyst of Al and at least one selected from Ni, Zn, Ti, and W is preferable because it has high PFC decomposition performance.

  The amount of water vapor added to the reaction tower during the hydrolysis of the fluorine compound is preferably 2 to 50 times the theoretical amount of water vapor required for hydrolysis, usually 3 to 30 times. When the silicon compound is hydrolyzed and removed by the scavenger, it is desirable to supply more than the theoretical water vapor amount required for hydrolysis of the fluorine compound, preferably 2 to 60 times, usually 5 to 50 times. .

  The hydrolysis temperature of the fluorine compound and silicon compound is preferably 500 to 850 ° C. When the fluorine compound concentration is high, the reaction temperature is raised, and when the fluorine compound concentration is 1% or less, the reaction temperature is preferably lowered. When the reaction temperature is higher than 850 ° C., the catalyst tends to deteriorate and the reaction tower material also tends to corrode. On the other hand, when the reaction temperature is lower than 500 ° C., the decomposition rate of the fluorine compound decreases.

  In this apparatus example, a cooling chamber 160 is installed downstream of the reaction tower 140. In the cooling chamber 160, for example, water is sprayed by the nozzle 161 to lower the gas temperature to a predetermined temperature. A general heat exchanger of water cooling type or gas cooling type may be used. Further, compressed air or the like may be introduced into the gas and controlled to a predetermined temperature.

  As the acid gas removing device, general wet and dry removing devices can be used. Examples of wet methods include spray towers, packed towers, scrubbers, and shelf-type gas-liquid contact devices. Examples of the dry type include a fixed bed, a moving bed, and a fluidized bed type dry removal apparatus using an acid gas remover. Also, a bug filter method is good. As acid gas removal agent, basic salts of alkali metals and alkaline earth metals such as calcium hydroxide, sodium hydroxide, potassium hydroxide, magnesium hydroxide, sodium hydrogen carbonate, sodium carbonate, calcium carbonate, calcium oxide are used. it can.

  FIG. 3 shows another example of the processing apparatus according to the present invention. In this example, the silicon compound scavenger 131 is not installed upstream of the fluorine compound decomposition catalyst 141, but the scavenger is applied to the inner surface of the preheating device, and the processing gas from the wet processing device 210 enters the preheating device 130. The silicon compound in the processing gas is removed by contacting with the applied scavenger 131. In this example, it is desirable that the processing gas from the wet processing apparatus 210 and the scavenger 131 are efficiently contacted. For example, the processing gas is introduced from the side surface of the preheating apparatus 130 to form a swirl flow in the preheating apparatus. There is a method for promoting the contact between the processing gas and the scavenger. Moreover, you may install a baffle plate etc. in a preheating apparatus, and may control a gas flow.

In this example, SiF ₄ was bubbled into water to prepare an aqueous solution containing a silicon compound, and the aqueous solution was allowed to flow into a reaction tube filled with a fluorine compound decomposition catalyst. It installed in the upper part and measured the decomposition rate of PFC in coexisting gas. The configuration of the test apparatus is shown in FIG.

CF ₄ as N ₂ , Air, and PFC was adjusted with a mass flow controller and supplied to the reaction tube 20. The supply amount was such that CF ₄ was about 0.48 vol%, and Air was such that the O ₂ concentration was about 2.12 vol%. Moreover, the silicon compound containing aqueous solution was supplied to the upper part of the reaction tube 20 using the microtube pump, and was gasified. The silicon compound-containing aqueous solution was supplied so that the inflow Si amount was 3.6 mg / min. The water vapor amount under these conditions was 25 times the CF ₄ hydrolysis reaction equivalent ratio. This reaction gas was brought into contact with the fluorine compound decomposition catalyst 24 at a space velocity of 1230 per hour. The reaction tube 20 was heated by an electric furnace 21 so that the trapping material 25 and the fluorine compound decomposition catalyst 24 became about 700 ° C. The reaction tube 20 is made of Inconel having an inner diameter of 32 mm. Calcium oxide was used as the silicon compound scavenger 25. The trapping material was granular and the particle size was 2.0-4.5 mm. The filling amount was 25% of the filling amount of the fluorine compound decomposition catalyst. Since hydrogen fluoride is contained in the gas decomposed by the fluorine compound decomposition catalyst, after removing hydrogen fluoride by the exhaust gas cleaning tank 40 containing 800 ml of water, the mist is removed by passing through the mist catcher 50. . A gas sampling port 60 was provided after the mist catcher 50, a part of the exhaust gas was sampled, and the amount of CF ₄ in the exhaust gas was measured. The decomposition rate of CF ₄ was determined by the following equation using a TCD gas chromatograph.
Decomposition rate (%) = (1- (CF 4 weight / the supplied CF ₄ of the outlet)) × 100
The CF ₄ decomposition rate after continuous aeration for 5 hours was 90.75%. Further, when the amount of Si contained in the silicon compound trapping material after the test was analyzed, about 20% of the inflowing Si amount was adhered to the trapping material.

As a comparative example, the CF ₄ decomposition rate was measured when the silicon compound capturing material 25 was not installed. The supply gas, the silicon compound, the amount of water, the fluorine compound decomposition catalyst, and the filling amount of the silicon compound trapping material were the same as described above. The CF ₄ decomposition rate after continuous aeration for 5 hours was 86.55%, and the decomposition rate was lower than when calcium oxide was installed as the silicon compound-trapping material.

In this embodiment, a silicon compound trapping material in which TiO ₂ is mixed with γAl ₂ O ₃ which is activated alumina is used. The adjustment method of the capturing material is as follows. A 30 wt% TiO ₂ sol manufactured by Ishihara Sangyo Co., Ltd. was mixed with 100 g of γAl ₂ O ₃ manufactured by Sumitomo Chemical Co., Ltd. so that the molar ratio of Al: Ti was 9: 1 and kneaded. After kneading, it was dried at 120 ° C. for 2 hours. The dried powder was fired at 700 ° C. for 2 hours. After firing, the adjustment was completed by forming, crushing, and classifying to a particle size of 2.0 to 4.5 mm. The test apparatus configuration, gas, silicon compound, water supply amount, fluorine compound decomposition catalyst, and filling amount of the silicon compound trapping material were the same as in Example 1. The CF ₄ decomposition rate after continuous aeration for 5 hours was 95.12%. Moreover, when the amount of Si contained in the silicon compound trapping material after the test was analyzed in the same manner as in Example 1, about 73% of the inflowing Si amount was adhered to the trapping material, indicating high Si trapping performance.

In this example, another component was added to γAl ₂ O ₃ —TiO ₂ which is the silicon compound trapping material prepared in Example 2 to improve performance. Tungsten was added as a third component to improve the solid acid properties of the capture material. The adjustment method is as follows. TiO ₂ sol and a commercially available WO ₃ aqueous solution were mixed and kneaded with 100 g of γAl ₂ O _{3 so} that the molar ratio of Al: Ti: W was 8: 1: 1. The preparation method after kneading is the same as in Example 2. The prepared capture material was installed in the test apparatus of FIG. 4 to evaluate the CF ₄ decomposition rate. The test apparatus configuration, gas, silicon compound, water supply amount, fluorine compound decomposition catalyst, and filling amount of the silicon compound trapping material were the same as in Example 1. The CF ₄ decomposition rate after continuous aeration for 5 hours was 96.41%, indicating a high CF ₄ decomposition rate. Further, when the amount of Si contained in the silicon compound trapping material after the test was analyzed, about 85% of the inflowing Si amount was adhered to the trapping material, and extremely high Si trapping performance was shown.

  The result of the 5-hour continuous ventilation test of the silicon compound trapping material used in Examples 1 to 3 is shown in FIG. 5 together with the case where the trapping material is not installed as a comparative example.

  According to the present invention, it has become possible to treat the fluorine compound contained in the exhaust gas used in the etching process or cleaning process of the semiconductor or liquid crystal manufacturing process at a high decomposition rate.

It is a system flow figure showing an example of the processing method of the present invention. It is a system configuration figure showing an example of a processing device of the present invention. It is a system block diagram which shows the other example of the processing apparatus by this invention. It is the schematic of the apparatus used for experiment. It is a test result figure which shows the installation effect of a capturing material.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 13 ... Mass flow controller, 30 ... Silicon compound containing aqueous solution, 31 ... Microtube pump, 40 ... Exhaust gas washing tank, 50 ... Mist catcher, 120 ... Packing tower, 130 ... Preheating apparatus, 131 ... Silicon compound trapping material, 140 ... Reaction tower 141 ... Fluorine compound decomposition catalyst, 150 ... Heater, 160 ... Cooling chamber, 210 ... Wet processing device, 211 ... Spray nozzle.

Claims (16)

A wet treatment step of removing a silicon compound by contacting a gas containing a fluorine compound and a silicon compound with water or an aqueous solution, and a fluorine compound decomposition step of decomposing the fluorine compound,
A method for treating a fluorine compound-containing gas, comprising a silicon compound removal step of removing a silicon compound from a gas after the wet treatment step and before the fluorine compound decomposition step.   The method for treating a fluorine compound-containing gas according to claim 1, wherein the silicon compound removing step is a step of removing the silicon compound using a silicon compound-trapping material. .   3. The method for treating a fluorine compound-containing gas according to claim 2, wherein the trapping material is a mixture of at least one of zirconium, cobalt, iron, titanium, nickel, cerium, tin, copper, magnesium, tungsten and alumina. The processing method of the fluorine compound containing gas characterized by these.   4. The method for treating a fluorine compound-containing gas according to claim 2, wherein the trapping material is used in a layered manner on the wall surface of the tubular part.   The method for treating a fluorine compound-containing gas according to any one of claims 1 to 4, wherein the silicon compound removing step is performed under heating.   2. The method for treating a fluorine compound-containing gas according to claim 1, wherein the fluorine compound contains PFC as the fluorine compound.   2. The method for treating a fluorine compound-containing gas according to claim 1, wherein the fluorine compound decomposition step is a catalytic decomposition step. A wet processing apparatus that removes the silicon compound by bringing a gas to be processed containing a silicon compound and a fluorine compound into contact with water or an aqueous solution, a preheating apparatus that heats the gas discharged from the wet processing apparatus to a predetermined temperature, and the fluorine A catalytic reactor that decomposes the compound by contacting it with a catalyst; and a silicon compound removing device that removes a silicon compound that is installed upstream of the catalytic reactor and downstream of the wet processing apparatus,
An apparatus for processing a fluorine compound-containing gas, wherein the gas to be processed passes through the wet processing apparatus, the silicon compound removing apparatus, and the catalytic reaction apparatus in this order. A wet processing apparatus that removes the silicon compound by bringing a gas to be processed containing a silicon compound and a fluorine compound into contact with water or an aqueous solution, a preheating apparatus that heats the gas discharged from the wet processing apparatus to a predetermined temperature, and the fluorine A treatment apparatus for a fluorine compound-containing gas, comprising a catalytic reactor for decomposing a compound in contact with a catalyst,
A treatment of a fluorine compound-containing gas having a silicon compound scavenger for removing a silicon compound inside the catalytic reactor and arranged so that a gas that has passed through the scavenger contacts the catalyst apparatus. A wet processing apparatus that removes the silicon compound by bringing a gas to be processed containing a silicon compound and a fluorine compound into contact with water or an aqueous solution, a preheating apparatus that heats the gas discharged from the wet processing apparatus to a predetermined temperature, and the fluorine A treatment apparatus for a fluorine compound-containing gas, comprising a catalytic reactor for decomposing a compound in contact with a catalyst,
An apparatus for treating a fluorine compound-containing gas, comprising a silicon compound trapping material for removing a silicon compound inside the preheating device. The apparatus for treating a fluorine compound-containing gas according to claim 8,
The fluorine compound processing apparatus is characterized in that the silicon compound removing apparatus removes a silicon compound with a trapping material. The apparatus for treating a fluorine compound-containing gas according to claim 8,
The fluorine compound treatment apparatus is characterized in that the silicon compound removal apparatus removes a silicon compound with a capturing material under heating. The apparatus for treating a fluorine compound-containing gas according to any one of claims 9 to 12,
An apparatus for treating a fluorine compound-containing gas, wherein the trapping material is a mixture of at least one of zirconium, cobalt, iron, titanium, nickel, cerium, tin, copper, magnesium, and tungsten and alumina. The apparatus for treating a fluorine compound-containing gas according to claim 10,
The apparatus for treating a fluorine compound-containing gas, wherein the capturing material is layered on an inner wall surface of the preheating device. The apparatus for treating a fluorine compound-containing gas according to any one of claims 8 to 14,
An apparatus for treating a fluorine compound-containing gas, comprising an exhaust gas cleaning device for removing hydrogen fluoride from the gas at a subsequent stage of the catalytic reactor. The apparatus for treating a fluorine compound-containing gas according to claim 13,
An apparatus for treating a fluorine compound-containing gas, wherein the capturing material is a mixture of alumina containing titanium and tungsten.

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