JP2006303853A - High-frequency line waveguide converter - Google Patents

High-frequency line waveguide converter Download PDF

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JP2006303853A
JP2006303853A JP2005121949A JP2005121949A JP2006303853A JP 2006303853 A JP2006303853 A JP 2006303853A JP 2005121949 A JP2005121949 A JP 2005121949A JP 2005121949 A JP2005121949 A JP 2005121949A JP 2006303853 A JP2006303853 A JP 2006303853A
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line
conductor
layer
frequency
waveguide
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Takayuki Shirasaki
隆行 白崎
Tomoya Tabuchi
智也 田淵
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Kyocera Corp
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Kyocera Corp
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<P>PROBLEM TO BE SOLVED: To provide a high-frequency line waveguide converter with a high conversion efficiency. <P>SOLUTION: The high-frequency line waveguide converter includes a high-frequency line 1 comprising a line conductor 3 formed on the upper face of a dielectric layer 2 and a same plane grounding conductor layer 4; slots 5 formed to the same planar grounding conductor layer 4 in a way of being orthogonal to one-ends of the line conductor 3; a grounding conductor layer 9 formed to the inner layer or the lower side of the dielectric layer 2; shielding conductors 7 for surrounding the slots 5 in planar perspective view and electrically connecting the same plane grounding conductor layer 4 and the grounding conductor layer 9; and a waveguide 6 electrically connected to the grounding conductor layer 4; and if the distance between the coplanar grounding conductor layer 4 and the grounding conductor layer 9 is L, the interval between the shielding conductors 7 at both sides of the line conductor 3 and adjacent to the line conductor 3, respectively is G, and the effective wavelength of a high-frequency signal transmitted through the high frequency line 1 is λ, then equation (G+2×L)≤λ/2 holds. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、マイクロ波やミリ波の領域において使用される、高周波回路を形成するコプレーナ線路等の高周波線路を導波管に変換し、高周波回路とアンテナあるいは高周波回路間の接続を導波管で行なうことにより、システムの実装、評価を容易に行なえる高周波線路−導波管変換器に関するものである。   The present invention converts a high-frequency line such as a coplanar line that forms a high-frequency circuit used in a microwave or millimeter wave region into a waveguide, and connects the high-frequency circuit and the antenna or the high-frequency circuit with the waveguide. The present invention relates to a high-frequency line-waveguide converter that can easily implement and evaluate a system.

近年、情報伝達に用いられる高周波信号は、マイクロ波領域からミリ波領域の周波数までを活用することが検討されている。例えば、ミリ波の高周波信号を用いた応用システムとして車間レーダーが提案されている。このような高周波用のシステムにおいては、高周波信号の周波数が高いことにより、回路を構成するマイクロストリップ線路構造等の高周波線路による高周波信号の減衰が大きくなるという問題点がある。   In recent years, high-frequency signals used for information transmission have been studied to utilize frequencies from the microwave region to the millimeter wave region. For example, an inter-vehicle radar has been proposed as an application system using millimeter-wave high-frequency signals. In such a high-frequency system, there is a problem that the high-frequency signal is attenuated by a high-frequency line such as a microstrip line structure constituting the circuit due to the high frequency of the high-frequency signal.

このようなマイクロストリップ線路構造等の高周波線路に比較して、導波管では高周波信号の伝送損失は小さいことが知られている。例えば、マイクロストリップ線路等による通常の高周波線路のインピーダンス(50Ω)に比較して、導波管のインピーダンス(周波数によって変化するが概略500Ωのオーダーで設計される)は大きく、通常の高周波線路では伝送される信号に対して誘電体中を伝送する電界の寄与が大きいのに対し、導波管ではその誘電体として誘電正接がほぼ0の空気を用いていること、相対的に小さい磁気エネルギーのもととなる導波管の管壁を流れる電流が小さくて良いこと、かつその電流が導波管の管壁の比較的広い面積に流れるため電気抵抗が小さくなり導体損が小さくなる構造になっていることによるものである。   It is known that a transmission loss of a high-frequency signal is small in a waveguide as compared with a high-frequency line such as a microstrip line structure. For example, compared to the impedance (50Ω) of a normal high-frequency line such as a microstrip line, the impedance of the waveguide (which varies depending on the frequency but is designed on the order of about 500Ω) is large. The contribution of the electric field transmitted through the dielectric to the generated signal is large, whereas the waveguide uses air having a dielectric loss tangent of almost zero as its dielectric, The current flowing through the waveguide tube wall can be small, and since the current flows in a relatively large area of the waveguide tube wall, the electrical resistance is reduced and the conductor loss is reduced. Is due to being.

また、導波管同士は通常、ねじで接続される。そのため着脱を容易に行なうことができるため、高周波回路モジュールとアンテナとの接続に導波管を用いれば、組み立て前にそれぞれの導波管ポートを用いてそれぞれの検査を行ない、良品同士を組み合わせて高周波フロントエンドを組み立てることができ、その製造の歩留まりを上げることができる。これらのことから従来、特に伝送距離が長くなることが多い高周波回路モジュールとアンテナとの間の伝送に導波管を用いたフロントエンドが多く採用されてきた。   The waveguides are usually connected with screws. Therefore, since it can be easily attached and detached, if a waveguide is used for the connection between the high-frequency circuit module and the antenna, each inspection is performed using each waveguide port before assembly, and non-defective products are combined. A high-frequency front end can be assembled, and the manufacturing yield can be increased. For these reasons, a front end using a waveguide for transmission between a high-frequency circuit module and an antenna, which often has a long transmission distance, has been conventionally used.

このような高周波フロントエンドとしては、誘電体層と、その表面に形成した線路導体およびその両側に配置された同一面接地導体層から成るコプレーナ線路と、このコプレーナ線路の先端に形成したアンテナとして機能するスロットと、誘電体層の裏面のスロットと対向する位置に接続した導波管と、誘電体層の内部に導波管および同一面接地導体層を接続するように形成したシールド導体部とを具備する高周波線路−導波管変換器が提案されている(下記の特許文献1参照)。   Such a high-frequency front end functions as a dielectric layer, a coplanar line composed of a line conductor formed on the surface of the dielectric layer, and a coplanar ground conductor layer disposed on both sides of the dielectric layer, and an antenna formed on the tip of the coplanar line. And a waveguide connected to a position facing the slot on the back surface of the dielectric layer, and a shield conductor portion formed so as to connect the waveguide and the same-surface grounded conductor layer inside the dielectric layer. A high-frequency line-waveguide converter is proposed (see Patent Document 1 below).

この変換器によれば、スロットから誘電体層と導波管内部との界面までの距離を誘電体層を伝送する電磁波の波長の1/4に設定することにより、スロットから放射され、誘電体層と導波管内部との界面で反射して同一面接地導体層で再度反射して界面に到達した反射波と、スロットから直接界面まで伝送してきた電磁波(直接波)との行路差が電磁波の波長の1/2と等しくなり、反射波の磁界が誘電体層と導波管内部との界面で反射する際に位相が反転することから、界面では直接波と反射波が同位相になって強め合い、導波管へ伝播していくこととなる。   According to this converter, by setting the distance from the slot to the interface between the dielectric layer and the inside of the waveguide to be ¼ of the wavelength of the electromagnetic wave transmitted through the dielectric layer, The path difference between the reflected wave reflected at the interface between the layer and the inside of the waveguide, reflected again from the ground conductor layer on the same plane and reaching the interface, and the electromagnetic wave transmitted directly from the slot to the interface (direct wave) Since the phase is inverted when the reflected wave magnetic field is reflected at the interface between the dielectric layer and the inside of the waveguide, the direct wave and the reflected wave are in phase at the interface. Will propagate to the waveguide.

すなわち、スロットと導波管との間に介在する、厚さを電磁波の波長の1/4に設定した誘電体層は、インピーダンスが互いに異なるスロットと導波管との整合器として機能することになる。
特開2004−32321号公報
That is, the dielectric layer interposed between the slot and the waveguide and having a thickness set to ¼ of the wavelength of the electromagnetic wave functions as a matching unit between the slot and the waveguide having different impedances. Become.
JP 2004-32321 A

しかしながら、上記従来の高周波線路−導波管変換器において、スロットを取り囲むように配されたシールド導体部は、線路導体を避ける必要があり、その間隔のためにスロットの伝送モードが不安定となり、その結果、反射損失が増加して変換効率が劣化するという問題があった。   However, in the conventional high-frequency line-waveguide converter, the shield conductor portion arranged so as to surround the slot needs to avoid the line conductor, and due to the interval, the transmission mode of the slot becomes unstable, As a result, there is a problem in that the reflection loss increases and the conversion efficiency deteriorates.

本発明は上記問題点を鑑み案出されたもので、その目的は変換効率の高い高周波線路−導波管変換器を提供することにある。   The present invention has been devised in view of the above problems, and an object thereof is to provide a high-frequency line-waveguide converter having high conversion efficiency.

本発明の高周波線路−導波管変換器は、誘電体層の上面に形成された線路導体および前記誘電体層の上面で前記線路導体の一端部を取り囲むように形成された同一面接地導体層から成る高周波線路と、前記同一面接地導体層に前記線路導体の前記一端部と直交するように形成されて前記線路導体と電磁的に結合されたスロットと、前記誘電体層の内層または下面に形成され、平面透視して前記スロットを取り囲む枠状の接地導体層と、平面透視して前記スロットを取り囲むとともに前記同一面接地導体層および前記接地導体層を電気的に接続するシールド導体部と、誘電体層の下面側に開口を前記スロットに対向させて配され、前記接地導体層と電気的に接続された導波管とを具備する高周波線路−導波管変換器であって、前記同一面接地導体層と前記接地導体層との間の距離をL、前記線路導体の両側にそれぞれ前記線路導体に隣接して設けられた前記シールド導体部同士の間隔をGとし、さらに前記高周波線路により伝送される高周波信号の実効波長をλとしたときに、(G+2×L)≦λ/2としたことを特徴とする。   The high-frequency line-waveguide converter of the present invention includes a line conductor formed on an upper surface of a dielectric layer and a coplanar ground conductor layer formed so as to surround one end portion of the line conductor on the upper surface of the dielectric layer. A high-frequency line comprising: a slot formed on the same-surface ground conductor layer so as to be orthogonal to the one end of the line conductor and electromagnetically coupled to the line conductor; and an inner layer or a lower surface of the dielectric layer A frame-like ground conductor layer that is formed in a plan view and surrounds the slot; and a shield conductor portion that surrounds the slot in a plan view and electrically connects the same-surface ground conductor layer and the ground conductor layer; A high-frequency line-waveguide converter comprising a waveguide disposed on a lower surface side of a dielectric layer so as to face the slot and electrically connected to the ground conductor layer, Ground contact L is the distance between the layer and the ground conductor layer, G is the distance between the shield conductor portions provided on both sides of the line conductor and adjacent to the line conductor, and is further transmitted by the high-frequency line. When the effective wavelength of the high-frequency signal is λ, (G + 2 × L) ≦ λ / 2.

本発明の高周波線路−導波管変換器は、同一面接地導体層と接地導体層との間の距離をL、線路導体の両側にそれぞれ線路導体に隣接して設けられたシールド導体部同士の間隔をGとし、さらに高周波線路により伝送される高周波信号の実効波長をλとしたときに、(G+2×L)≦λ/2としたことから、線路導体の両側の同一面接地導体層をほぼ同電位にすることができ、高周波線路およびスロットの電気特性を安定化させることができる。その結果、反射損失を抑制して変換効率を非常に向上させることができる。   In the high-frequency line-waveguide converter of the present invention, the distance between the coplanar ground conductor layer and the ground conductor layer is L, and the shield conductor portions provided on both sides of the line conductor adjacent to the line conductor are respectively When the interval is G and the effective wavelength of the high-frequency signal transmitted through the high-frequency line is λ, (G + 2 × L) ≦ λ / 2 is satisfied. The electric potential can be made the same, and the electric characteristics of the high-frequency line and the slot can be stabilized. As a result, reflection loss can be suppressed and conversion efficiency can be greatly improved.

すなわち、線路導体がスロットに挿入されていることによりスロットが途切れた形状となり、この途切れた部分において、線路導体の両側の同一面接地導体層同士は、長さがLの一方のシールド導体部、線路導体の両側に配されたシールド導体部間に位置する長さがGの接地導体層、および長さがLの他方のシールド導体部を介して電気的に接続されている。よって、この合計の距離であるL+G+L、つまり(G+2×L)を高周波線路により伝送される高周波信号の実行波長λのλ/2以下とすることにより、線路導体の両側の同一面接地導体層同士をほぼ同電位とすることができ、スロットの電気特性を安定化することができる。   That is, when the line conductor is inserted into the slot, the slot is cut off, and in the cut off part, the same-surface ground conductor layers on both sides of the line conductor are one shield conductor part having a length L, They are electrically connected via a ground conductor layer having a length of G located between shield conductor portions disposed on both sides of the line conductor and the other shield conductor portion having a length of L. Therefore, L + G + L, that is, (G + 2 × L), which is the total distance, is equal to or less than λ / 2 of the effective wavelength λ of the high-frequency signal transmitted through the high-frequency line. Can be made substantially the same potential, and the electrical characteristics of the slot can be stabilized.

以下、本発明を添付図面に基づき詳細に説明する。   Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

図1は本発明の高周波線路−導波管変換器の実施の形態の一例を示す図であり、(a)は平面図、(b)は(a)の高周波線路−導波管変換器のA−AA線における断面図である。図1において、1は高周波線路、2は誘電体層、3は線路導体、4は同一面接地導体層、5は同一面接地導体層4に形成されたスロット、6は導波管、7はシールド導体部、9は接地導体層である。   FIG. 1 is a diagram showing an example of an embodiment of a high-frequency line-waveguide converter of the present invention, where (a) is a plan view, and (b) is a high-frequency line-waveguide converter of (a). It is sectional drawing in the A-AA line. In FIG. 1, 1 is a high-frequency line, 2 is a dielectric layer, 3 is a line conductor, 4 is a ground conductor layer on the same plane, 5 is a slot formed in the ground conductor layer 4 on the same plane, 6 is a waveguide, The shield conductor portion 9 is a ground conductor layer.

これら本発明の高周波線路−導波管変換器の例においては、誘電体層2と、誘電体層2の上面に配された線路導体3と、線路導体3の一端部を取り囲むように同一面(誘電体層2の上面)に配された同一面接地導体層4とによって高周波線路1としてのコプレーナ線路が形成されている。また、誘電体層2の上面の同一面接地導体層4には線路導体3の一端部と直交するように形成されたスロット5が配されており、高周波線路1の一端と電磁気的に結合されている。これにより、高周波線路1に伝送された高周波信号は、スロット5から、誘電体層2の下面側に開口を線路導体3の一端部およびスロット5に対向させて配され、下方に延びるように配置された導波管6内に電磁波として放射される。   In these examples of the high-frequency line-waveguide converter of the present invention, the dielectric layer 2, the line conductor 3 disposed on the upper surface of the dielectric layer 2, and the same surface so as to surround one end of the line conductor 3. A coplanar line serving as the high-frequency line 1 is formed by the coplanar ground conductor layer 4 disposed on (the upper surface of the dielectric layer 2). In addition, a slot 5 formed so as to be orthogonal to one end of the line conductor 3 is disposed in the same grounded conductor layer 4 on the upper surface of the dielectric layer 2 and is electromagnetically coupled to one end of the high-frequency line 1. ing. Thus, the high-frequency signal transmitted to the high-frequency line 1 is arranged to extend downward from the slot 5 on the lower surface side of the dielectric layer 2 with the opening facing the one end of the line conductor 3 and the slot 5. It is radiated as electromagnetic waves into the waveguide 6 formed.

また誘電体層2には、線路導体3の一端部およびスロット5を取り囲むようにして、図1の例に示すように誘電体層2の内部または側面に配されたシールド導体部7によりシールドされており、スロット5から誘電体層2に放射された電磁波および誘電体層2と導波管6との境界で反射した電磁波が漏れ出すことを防ぎ、変換効率が低下することを防止している。   Further, the dielectric layer 2 is shielded by a shield conductor portion 7 disposed inside or on the side surface of the dielectric layer 2 so as to surround one end of the line conductor 3 and the slot 5 as shown in the example of FIG. Thus, the electromagnetic wave radiated from the slot 5 to the dielectric layer 2 and the electromagnetic wave reflected at the boundary between the dielectric layer 2 and the waveguide 6 are prevented from leaking and the conversion efficiency is prevented from being lowered. .

また、高周波線路1とスロット5とが同一面内に形成されることとなり、その結果、両者の相対的な位置関係が変動しにくく、スロット5に対する高周波線路1の突出部分であるスタブの長さのばらつきを小さくすることができるため、電磁結合の特性のばらつきを小さくすることができる。   In addition, the high-frequency line 1 and the slot 5 are formed in the same plane, and as a result, the relative positional relationship between the two is less likely to vary, and the length of the stub that is the protruding portion of the high-frequency line 1 with respect to the slot 5 Therefore, the variation in electromagnetic coupling characteristics can be reduced.

そして本発明の高周波線路−導波管変換器は、同一面接地導体層4と接地導体層9との間の距離をL、線路導体3の両側にそれぞれ線路導体3に隣接して設けられたシールド導体部7同士の間隔をGとし、さらに高周波線路1により伝送される高周波信号の実効波長をλとしたときに、(G+2×L)≦λ/2としている。これにより、線路導体3の両側の同一面接地導体層4をほぼ同電位にすることができ、高周波線路1およびスロット5の電気特性を安定化させることができる。その結果、反射損失を抑制して変換効率を非常に向上させることができる。   In the high-frequency line-waveguide converter of the present invention, the distance between the same-surface ground conductor layer 4 and the ground conductor layer 9 is L, and the line conductor 3 is provided on both sides adjacent to the line conductor 3. When the interval between the shield conductor portions 7 is G and the effective wavelength of the high-frequency signal transmitted through the high-frequency line 1 is λ, (G + 2 × L) ≦ λ / 2. Thereby, the same-surface grounding conductor layer 4 on both sides of the line conductor 3 can be set to substantially the same potential, and the electrical characteristics of the high-frequency line 1 and the slot 5 can be stabilized. As a result, reflection loss can be suppressed and conversion efficiency can be greatly improved.

すなわち、線路導体3がスロット5に挿入されていることによりスロット5が途切れた形状となり、この途切れた部分において、線路導体3の両側の同一面接地導体層4同士は、長さがLの一方のシールド導体部7、線路導体3の両側に配されたシールド導体部7間に位置する長さがGの接地導体層9、および長さがLの他方のシールド導体部7を介して電気的に接続されている。よって、この合計の距離であるL+G+L、つまり(G+2×L)を高周波線路1により伝送される高周波信号の実行波長λのλ/2以下とすることにより、線路導体3の両側の同一面接地導体層4同士をほぼ同電位とすることができ、スロット5の電気特性を安定化することができる。   That is, when the line conductor 3 is inserted into the slot 5, the slot 5 is cut off, and in this cut-off portion, the same-surface ground conductor layers 4 on both sides of the line conductor 3 have one length L. Through the ground conductor layer 9 having a length of G located between the shield conductor portions 7 disposed on both sides of the line conductor 3 and the other shield conductor portion 7 having a length of L. It is connected to the. Therefore, by setting L + G + L that is the total distance, that is, (G + 2 × L), to be equal to or less than λ / 2 of the effective wavelength λ of the high-frequency signal transmitted through the high-frequency line 1, the same plane ground conductors on both sides of the line conductor 3 are used. The layers 4 can have substantially the same potential, and the electrical characteristics of the slot 5 can be stabilized.

誘電体層2を形成する誘電体材料としては、酸化アルミニウム,窒化アルミニウム,窒化珪素,ムライト等を主成分とするセラミック材料,ガラス,あるいはガラスとセラミックフィラーとの混合物を焼成して形成されたガラスセラミック材料,エポキシ樹脂,ポリイミド樹脂,四フッ化エチレン樹脂を始めとするフッ素系樹脂等の有機樹脂系材料,有機樹脂−セラミック(ガラスも含む)複合系材料等が用いられる。   As a dielectric material for forming the dielectric layer 2, ceramic material mainly composed of aluminum oxide, aluminum nitride, silicon nitride, mullite, glass, or glass formed by firing a mixture of glass and ceramic filler Ceramic materials, epoxy resins, polyimide resins, organic resin materials such as fluorine resins such as tetrafluoroethylene resin, and organic resin-ceramic (including glass) composite materials are used.

線路導体3,同一面接地導体層4,貫通導体等から成るシールド導体部7を形成する導体材料としては、タングステン,モリブデン,金,銀,銅等を主成分とするメタライズ、あるいは金,銀,銅,アルミニウム等を主成分とする金属箔等が用いられる。   As a conductor material for forming the shield conductor portion 7 composed of the line conductor 3, the same-surface ground conductor layer 4, the through conductor, etc., metallization mainly composed of tungsten, molybdenum, gold, silver, copper or the like, or gold, silver, A metal foil or the like mainly composed of copper, aluminum or the like is used.

特に、高周波線路−導波管変換器を、高周波部品を搭載する配線基板に内蔵する場合は、誘電体層2を形成する誘電体材料としては、誘電正接が小さく、かつ気密封止が可能であることが望ましい。特に望ましい誘電体材料としては、酸化アルミニウム,窒化アルミニウム,ガラスセラミック材料の群から選ばれる少なくとも1種の無機材料が挙げられる。このような硬質系材料で構成すれば、誘電正接が小さく、かつ搭載した高周波部品を気密に封止することができるので、搭載した高周波部品の信頼性を高める上で好ましい。この場合、導体材料としては、誘電体材料との同時焼成が可能なメタライズ導体を用いることが、気密封止性と生産性の上で望ましい。   In particular, when the high-frequency line-waveguide converter is built in a wiring board on which high-frequency components are mounted, the dielectric material forming the dielectric layer 2 has a small dielectric loss tangent and can be hermetically sealed. It is desirable to be. A particularly desirable dielectric material includes at least one inorganic material selected from the group of aluminum oxide, aluminum nitride, and glass ceramic material. Such a hard material is preferable in terms of improving the reliability of the mounted high-frequency component because the dielectric loss tangent is small and the mounted high-frequency component can be hermetically sealed. In this case, it is desirable to use a metallized conductor that can be fired simultaneously with the dielectric material as the conductor material in terms of hermetic sealing and productivity.

本発明の高周波線路−導波管変換器は以下のようにして作製される。例えば誘電体材料に酸化アルミニウム質焼結体を用いる場合であれば、まず酸化アルミニウム,酸化珪素,酸化マグネシウム,酸化カルシウム等の原料粉末に適当な有機溶剤,溶媒を添加混合してスラリー状にし、これを従来周知のドクターブレード法やカレンダーロール法によりシート状に成形してセラミックグリーンシートを作製する。また、タングステンやモリブデン等の高融点金属,酸化アルミニウム,酸化珪素,酸化マグネシウム,酸化カルシウム等の原料粉末に適当な有機溶剤,溶媒を添加混合してメタライズペーストを作製する。   The high-frequency line-waveguide converter of the present invention is manufactured as follows. For example, when an aluminum oxide sintered body is used as a dielectric material, first, an appropriate organic solvent or solvent is added to and mixed with raw material powders such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide to form a slurry. This is formed into a sheet shape by a conventionally known doctor blade method or calendar roll method to produce a ceramic green sheet. Further, a metallized paste is prepared by adding and mixing an appropriate organic solvent and solvent to a raw material powder such as a high melting point metal such as tungsten or molybdenum, aluminum oxide, silicon oxide, magnesium oxide, calcium oxide or the like.

次に、セラミックグリーンシートに、例えば打ち抜き法によりシールド導体部7としての貫通導体を形成するための貫通孔を形成し、例えば印刷法により、その貫通孔にメタライズペーストを埋め込み、続いて線路導体3、スロット5を有する同一面接地導体層4の形状にメタライズペーストを印刷する。誘電体層2が複数の誘電体層の積層構造からなる場合には、これら導体が埋め込み,印刷されたセラミックグリーンシートを積層し、加圧して圧着し、高温(約1600℃)で焼成する。さらに、線路導体3、同一面接地導体層4等の表面に露出する導体の表面には、ニッケルめっきおよび金めっきを被着させる。   Next, a through hole for forming a through conductor as the shield conductor portion 7 is formed in the ceramic green sheet by, for example, a punching method, and a metallized paste is embedded in the through hole by, for example, a printing method. The metallized paste is printed in the shape of the same-surface grounded conductor layer 4 having the slots 5. When the dielectric layer 2 has a laminated structure of a plurality of dielectric layers, ceramic green sheets embedded and printed with these conductors are laminated, pressed and pressed, and fired at a high temperature (about 1600 ° C.). Furthermore, nickel plating and gold plating are applied to the surface of the conductor exposed on the surface of the line conductor 3, the same-surface ground conductor layer 4, and the like.

シールド導体部7は線路導体3の一端部およびスロット5を取り囲むように誘電体層2の側面または内部に配され、同一面接地導体層4に電気的に接続されて接地される。   The shield conductor portion 7 is disposed on the side surface or inside of the dielectric layer 2 so as to surround one end portion of the line conductor 3 and the slot 5, and is electrically connected to the same-surface ground conductor layer 4 and grounded.

なお、シールド導体部7を構成するシールド用貫通導体は、貫通孔の内壁に導体層が被着されたいわゆるスルーホール導体であってもよく、貫通孔の内部が導体で充填されたいわゆるビア導体であってもよい。また、シールド導体部7は誘電体層2の側面に形成された側面導体やキャスタレーション導体でもよい。   The shield through conductor constituting the shield conductor portion 7 may be a so-called through-hole conductor in which a conductor layer is attached to the inner wall of the through-hole, or a so-called via conductor in which the inside of the through-hole is filled with a conductor. It may be. Further, the shield conductor portion 7 may be a side conductor or castellation conductor formed on the side surface of the dielectric layer 2.

また、接地導体層9は図1に示すように誘電体層2の内層に平面透視してスロット5を取り囲むような枠状に形成されていてもよく、あるいは、誘電体層2の下面に平面透視してスロット5を取り囲むような枠状に形成されていてもよい。   Further, as shown in FIG. 1, the ground conductor layer 9 may be formed in a frame shape so as to surround the slot 5 in a plan view through the inner layer of the dielectric layer 2, or may be formed on the lower surface of the dielectric layer 2. It may be formed in a frame shape so as to surround the slot 5 as seen through.

導波管6の形状は特に制約はなく、例えば方形導波管として規格化されているWRシリーズを用いると、測定用校正キットが充実しているので種々の特性評価が容易になるが、使用する高周波信号の周波数に応じてシステムの小型軽量化のために導波管のカットオフが発生しない範囲で小型化した方形導波管を用いてもよい。また、円形導波管を用いてもよい。   The shape of the waveguide 6 is not particularly limited. For example, when a WR series standardized as a rectangular waveguide is used, a variety of measurement calibration kits are available, so that various characteristics can be easily evaluated. In order to reduce the size and weight of the system in accordance with the frequency of the high-frequency signal, a rectangular waveguide that is miniaturized within a range in which the waveguide is not cut off may be used. A circular waveguide may be used.

導波管6は、金属で構成し、管内壁を電流による導体損低減や腐食防止のために金,銀等の貴金属で被覆するとよい。また、樹脂を必要な導波管形状に成型し、金属の場合と同様に管内壁を金,銀等の貴金属で被覆したものであってもよい。導波管6の高周波線路−導波管変換器への取り付けは、ろう材による接合やねじによる締め付け等によって行なわれる。   The waveguide 6 is made of metal, and the inner wall of the tube may be covered with a noble metal such as gold or silver in order to reduce conductor loss due to current or prevent corrosion. Alternatively, the resin may be molded into a necessary waveguide shape, and the inner wall of the tube may be covered with a noble metal such as gold or silver as in the case of metal. The waveguide 6 is attached to the high-frequency line-waveguide converter by joining with a brazing material or fastening with a screw.

接地導体層9が誘電体層2の下面に形成されている場合、導波管6はこの接地導体層9にろう材等の導電性接合材を介して接合される。また、図1のように接地導体層9が誘電体層2の内層に形成されている場合、ろう材による接合によって導波管6を高周波線路−導波管変換器へ取り付けるためには、接地導体層9と電気的に接続された導波管接続用導体10を、取り付けられる導波管6の開口に合わせて形成しておくとよい。例えば、図1に示したように、誘電体層2の下層に設置導体層9と電気的に接続されたシールド用導体7’を形成し、このシールド用導体7’と電気的に接続されたメタライズ層から成る導波管接続用導体10を形成しておくとよい。このような導波管接続用導体10を形成しておくと、導波管6を高周波線路−導波管変換器へ取り付けた際の導波管6と接地導体層9との電気的接続がより確実なものとなるので、信頼性の高い高周波線路−導波管変換器を構成することができる点で好ましいものとなる。   When the ground conductor layer 9 is formed on the lower surface of the dielectric layer 2, the waveguide 6 is joined to the ground conductor layer 9 via a conductive joining material such as a brazing material. When the ground conductor layer 9 is formed in the inner layer of the dielectric layer 2 as shown in FIG. 1, in order to attach the waveguide 6 to the high-frequency line-waveguide converter by bonding with a brazing material, A waveguide connecting conductor 10 electrically connected to the conductor layer 9 may be formed in accordance with the opening of the waveguide 6 to be attached. For example, as shown in FIG. 1, a shield conductor 7 'electrically connected to the installation conductor layer 9 is formed in the lower layer of the dielectric layer 2, and the shield conductor 7' is electrically connected. A waveguide connecting conductor 10 made of a metallized layer is preferably formed. If such a waveguide connecting conductor 10 is formed, the electrical connection between the waveguide 6 and the ground conductor layer 9 when the waveguide 6 is attached to the high-frequency line-waveguide converter is reduced. Since it becomes more reliable, it is preferable in that a highly reliable high-frequency line-waveguide converter can be configured.

導波管接続用導体10は、前述の作製方法において、線路導体3および同一面接地導体層4の形成と同様に、導波管接続用導体10の形状にメタライズペーストを印刷することにより同時に形成すればよい。さらに、線路導体3や同一面接地導体層4等の表面に露出する導体と同様に、その表面にニッケルめっきおよび金めっきを被着させると、ろう材による接合の場合のろう材の濡れ性が向上するので、より好ましいものとなる。   The waveguide connecting conductor 10 is simultaneously formed by printing metallized paste on the shape of the waveguide connecting conductor 10 in the above-described manufacturing method, similarly to the formation of the line conductor 3 and the same-surface grounded conductor layer 4. do it. Further, like the conductor exposed on the surface of the line conductor 3 and the same-surface ground conductor layer 4 and the like, when nickel plating and gold plating are applied to the surface, the wettability of the brazing material in the case of joining with the brazing material is increased. Since it improves, it becomes more preferable.

また、シールド用導体7’も前述のシールド導体部7と同様に貫通導体やスルーホール導体、側面導体、キャスタレーション導体などから成り、シールド導体部7と同様の方法で作製することができる。   Similarly to the shield conductor portion 7 described above, the shield conductor 7 ′ is made of a through conductor, a through-hole conductor, a side conductor, a castellation conductor, and the like, and can be manufactured by the same method as the shield conductor portion 7.

本発明の高周波線路−導波管変換器の実施例を以下に説明する。   Examples of the high-frequency line-waveguide converter of the present invention will be described below.

まず、比誘電率が8.6からなるアルミナセラミックスから成り、厚みが1.9mmの誘電体層2の上面に高周波線路1として特性インピーダンスが50Ωとなるような線路導体3および同一面接地導体層4を形成した。また、誘電体層2の内部に接地導体層9および同一面接地導体層4と接地導体層9とを接続するシールド導体部7を形成した。   First, a line conductor 3 and a coplanar ground conductor layer having a characteristic impedance of 50Ω as a high-frequency line 1 on the upper surface of a dielectric layer 2 made of alumina ceramic having a relative dielectric constant of 8.6 and having a thickness of 1.9 mm. 4 was formed. Further, the ground conductor layer 9 and the shield conductor portion 7 for connecting the same-surface ground conductor layer 4 and the ground conductor layer 9 were formed inside the dielectric layer 2.

さらに、同一面接地導体層4に線路導体3に直交するように、線路導体3の線路方向の長さが0.1mm、線路導体3に直交する方向の長さが3.1mmのスロット5を形成した。   Further, a slot 5 having a length in the line direction of the line conductor 3 of 0.1 mm and a length in the direction perpendicular to the line conductor 3 of 3.1 mm is formed in the same plane ground conductor layer 4 so as to be orthogonal to the line conductor 3. Formed.

なお、線路導体3を挟んだシールド導体部7同士の間隔をG、同一面接地導体層4と接地導体層との距離(シールド導体部7の長さ)をLとしたときに、G+2×Lを、3.20、2.66、2.12、1.60mmと変化させた。   Note that G + 2 × L, where G is the distance between the shield conductor portions 7 with the line conductor 3 interposed therebetween, and L is the distance between the ground conductor layer 4 and the ground conductor layer (the length of the shield conductor portion 7). Was changed to 3.20, 2.66, 2.12 and 1.60 mm.

ここで、接続する導波管6をWR−42(18GHz〜26.5GHz)に設定し、高周波3次元構造シミュレータ(Ansoft社製HFSS)を用いて24GHzを中心周波数として設計した。   Here, the waveguide 6 to be connected was set to WR-42 (18 GHz to 26.5 GHz), and a high frequency three-dimensional structure simulator (HFSS manufactured by Ansoft) was used to design 24 GHz as a center frequency.

その結果、λ/2以下に相当する2.12、1.60mmにおいては、反射損失S11≦−15dBと高周波モジュールを製作する上で実用的な反射損失が得られることが確認された。   As a result, it was confirmed that in 2.12 and 1.60 mm corresponding to λ / 2 or less, a reflection loss S11 ≦ −15 dB and a practical reflection loss can be obtained in manufacturing a high-frequency module.

なお、本発明は以上の実施の形態の例および実施例に限定されるものではなく、本発明の要旨を逸脱しない範囲であれば、種々の変更を行なっても差し支えない。   Note that the present invention is not limited to the above-described embodiments and examples, and various modifications may be made without departing from the scope of the present invention.

例えば、図1では高周波線路1がコプレーナ線路構造の場合の例を示したが、誘電体層2の上にさらに誘電体層を積層し、この誘電体層の上面に線路導体3を覆うように上面接地導体層を設けたグランド付きコプレーナ線路構造としてもよく、この場合も、誘電体層2、線路導体3、同一面接地導体層4、スロット5、導波管6、シールド導体部7、接地導体層9の位置関係を図1に示す例と同様にすることにより、同様の効果を得ることができる。   For example, FIG. 1 shows an example in which the high-frequency line 1 has a coplanar line structure, but a dielectric layer is further laminated on the dielectric layer 2 so that the line conductor 3 is covered on the upper surface of the dielectric layer. A coplanar line structure with a ground provided with an upper surface ground conductor layer may be used. In this case as well, the dielectric layer 2, the line conductor 3, the coplanar ground conductor layer 4, the slot 5, the waveguide 6, the shield conductor portion 7, the ground By making the positional relationship of the conductor layer 9 the same as in the example shown in FIG. 1, the same effect can be obtained.

また、図1ではシールド導体部7は複数の貫通導体の場合の例を示したが、誘電体層2を小さくし側面に導体層を形成したり、導波管6を高周波線路−導波管変換器側に延長することにより導波管6をシールド導体部としても構わない。   FIG. 1 shows an example in which the shield conductor portion 7 is a plurality of through conductors. However, the dielectric layer 2 is reduced to form a conductor layer on the side surface, or the waveguide 6 is replaced with a high-frequency line-waveguide. The waveguide 6 may be used as a shield conductor portion by extending to the converter side.

(a)は本発明の高周波線路−導波管変換器の実施の形態の一例を示す平面図であり、(b)は(a)の高周波線路−導波管変換器のA−AA線における断面図である。(A) is a top view which shows an example of embodiment of the high frequency line-waveguide converter of this invention, (b) is in the A-AA line of the high frequency line-waveguide converter of (a). It is sectional drawing.

符号の説明Explanation of symbols

1:高周波線路
2:誘電体層
3:線路導体
4:同一面接地導体層
5:スロット
6:導波管
7:シールド導体部
9:接地導体層
1: High-frequency line 2: Dielectric layer 3: Line conductor 4: Coplanar ground conductor layer 5: Slot 6: Waveguide 7: Shield conductor 9: Ground conductor layer

Claims (1)

誘電体層の上面に形成された線路導体および前記誘電体層の上面で前記線路導体の一端部を取り囲むように形成された同一面接地導体層から成る高周波線路と、前記同一面接地導体層に前記線路導体の前記一端部と直交するように形成されて前記線路導体と電磁的に結合されたスロットと、前記誘電体層の内層または下面に形成され、平面透視して前記スロットを取り囲む枠状の接地導体層と、平面透視して前記スロットを取り囲むとともに前記同一面接地導体層および前記接地導体層を電気的に接続するシールド導体部と、誘電体層の下面側に開口を前記スロットに対向させて配され、前記接地導体層と電気的に接続された導波管とを具備する高周波線路−導波管変換器であって、前記同一面接地導体層と前記接地導体層との間の距離をL、前記線路導体の両側にそれぞれ前記線路導体に隣接して設けられた前記シールド導体部同士の間隔をGとし、さらに前記高周波線路により伝送される高周波信号の実効波長をλとしたときに、(G+2×L)≦λ/2としたことを特徴とする高周波線路−導波管変換器。 A line conductor formed on the upper surface of the dielectric layer, a high-frequency line including a coplanar ground conductor layer formed so as to surround one end portion of the line conductor on the upper surface of the dielectric layer, and the coplanar ground conductor layer A slot formed perpendicular to the one end of the line conductor and electromagnetically coupled to the line conductor, and a frame shape formed on the inner layer or the lower surface of the dielectric layer and surrounding the slot as seen through a plane. A ground conductor layer, a shield conductor portion that surrounds the slot in a plan view and electrically connects the same ground conductor layer and the ground conductor layer, and an opening on the lower surface side of the dielectric layer is opposed to the slot A high-frequency line-to-waveguide converter comprising a waveguide electrically disposed and connected to the ground conductor layer, wherein the high-frequency line-waveguide converter is provided between the coplanar ground conductor layer and the ground conductor layer. Distance to L When the distance between the shield conductor portions provided on both sides of the line conductor adjacent to the line conductor is G and the effective wavelength of the high-frequency signal transmitted through the high-frequency line is λ, (G + 2 × L) A high-frequency line-waveguide converter characterized in that ≦ λ / 2.
JP2005121949A 2005-04-20 2005-04-20 High-frequency line waveguide converter Pending JP2006303853A (en)

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