JP2006303222A5 - - Google Patents

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Publication number
JP2006303222A5
JP2006303222A5 JP2005123525A JP2005123525A JP2006303222A5 JP 2006303222 A5 JP2006303222 A5 JP 2006303222A5 JP 2005123525 A JP2005123525 A JP 2005123525A JP 2005123525 A JP2005123525 A JP 2005123525A JP 2006303222 A5 JP2006303222 A5 JP 2006303222A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005123525A
Other languages
Japanese (ja)
Other versions
JP2006303222A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005123525A priority Critical patent/JP2006303222A/ja
Priority claimed from JP2005123525A external-priority patent/JP2006303222A/ja
Priority to US11/392,572 priority patent/US20060237747A1/en
Priority to KR1020060036085A priority patent/KR100769958B1/ko
Publication of JP2006303222A publication Critical patent/JP2006303222A/ja
Publication of JP2006303222A5 publication Critical patent/JP2006303222A5/ja
Pending legal-status Critical Current

Links

JP2005123525A 2005-04-21 2005-04-21 ヘテロ接合バイポーラトランジスタおよびそれを備える増幅器 Pending JP2006303222A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2005123525A JP2006303222A (ja) 2005-04-21 2005-04-21 ヘテロ接合バイポーラトランジスタおよびそれを備える増幅器
US11/392,572 US20060237747A1 (en) 2005-04-21 2006-03-30 Heterojunction bipolar transistor and amplifier including the same
KR1020060036085A KR100769958B1 (ko) 2005-04-21 2006-04-21 헤테로 접합 바이폴라 트랜지스터 및 그것을 구비하는 증폭기

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005123525A JP2006303222A (ja) 2005-04-21 2005-04-21 ヘテロ接合バイポーラトランジスタおよびそれを備える増幅器

Publications (2)

Publication Number Publication Date
JP2006303222A JP2006303222A (ja) 2006-11-02
JP2006303222A5 true JP2006303222A5 (enExample) 2008-05-01

Family

ID=37185947

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005123525A Pending JP2006303222A (ja) 2005-04-21 2005-04-21 ヘテロ接合バイポーラトランジスタおよびそれを備える増幅器

Country Status (3)

Country Link
US (1) US20060237747A1 (enExample)
JP (1) JP2006303222A (enExample)
KR (1) KR100769958B1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005197405A (ja) 2004-01-06 2005-07-21 Toshiba Corp 半導体装置とその製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2587826B2 (ja) * 1987-03-27 1997-03-05 日本電信電話株式会社 バイポ−ラトランジスタとその製造方法
US4821082A (en) * 1987-10-30 1989-04-11 International Business Machines Corporation Heterojunction bipolar transistor with substantially aligned energy levels
JPH02291135A (ja) * 1989-05-01 1990-11-30 Sumitomo Electric Ind Ltd ヘテロ接合バイポーラトランジスタ
JPH03105925A (ja) * 1989-09-19 1991-05-02 Fujitsu Ltd 半導体装置
US5171697A (en) * 1991-06-28 1992-12-15 Texas Instruments Incorporated Method of forming multiple layer collector structure for bipolar transistors
JPH0541388A (ja) * 1991-08-05 1993-02-19 Nippon Telegr & Teleph Corp <Ntt> ヘテロバイポ−ラトランジスタ
JPH05109750A (ja) 1991-10-15 1993-04-30 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
TWI286773B (en) * 2000-10-26 2007-09-11 Matsushita Electric Works Ltd Field emission type electron source
JP2004538646A (ja) * 2001-08-07 2004-12-24 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ バイポーラトランジスタ及びその製造方法
JP3573737B2 (ja) * 2002-01-18 2004-10-06 Ｎｅｃ化合物デバイス株式会社 ヘテロ接合バイポーラ・トランジスタおよび半導体集積回路
US6809400B2 (en) * 2003-03-14 2004-10-26 Eric Harmon Composite pinin collector structure for heterojunction bipolar transistors
JP2005197440A (ja) * 2004-01-07 2005-07-21 Matsushita Electric Ind Co Ltd 半導体装置

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