JP2006302966A - Wiring board - Google Patents

Wiring board Download PDF

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JP2006302966A
JP2006302966A JP2005118696A JP2005118696A JP2006302966A JP 2006302966 A JP2006302966 A JP 2006302966A JP 2005118696 A JP2005118696 A JP 2005118696A JP 2005118696 A JP2005118696 A JP 2005118696A JP 2006302966 A JP2006302966 A JP 2006302966A
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wiring
film
substrate
wiring board
film substrate
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JP4484750B2 (en
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Masayuki Matsumoto
将之 松本
Tahei Nakagami
太平 中上
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Sharp Corp
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Sharp Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector

Abstract

<P>PROBLEM TO BE SOLVED: To easily recognize the size of a bubble 13 generated between an integrated circuit chip (IC) 1 and a film substrate 4. <P>SOLUTION: A wiring substrate 20 has at least the film substrate 4 and a first wiring pattern 30 formed on one surface of the film substrate 4. A connection terminal 32 is formed on the end of the first wiring pattern 30, and the bump 2 of the IC 1 is connected to the connection terminal 32, thereby mounting the IC 1 on the wiring substrate 20. The wiring substrate 20 has a bubble measurement pattern formed on the other surface of the film substrate 4 and formed in a mounting region of the IC 1. The bubble measurement pattern consists of a film 6 having a plurality of openings 8 arranged in matrix. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、配線パターンを有するフィルム基板などの絶縁基板に、各種の集積回路チップ(以下、「IC」ともいう)、例えばドライバ、メモリ、コントローラ、グラフィックス等のベアチップがフェイスダウン実装される配線基板に関する。   The present invention relates to wiring in which various integrated circuit chips (hereinafter also referred to as “IC”), for example, bare chips such as drivers, memories, controllers, and graphics, are face-down mounted on an insulating substrate such as a film substrate having a wiring pattern. Regarding the substrate.

近年、携帯電話型等の電子機器の小型化および多機能化に伴ってICの高密度実装が急速に進んでおり、実装密度を上げるために、フィルム基板の両面に配線パターンを形成した配線基板が採用されている。フィルム基板の両面に配線パターンが形成された配線基板が例えば特許文献1に記載されている。   In recent years, with the miniaturization and multi-functionalization of electronic devices such as mobile phone type, high-density mounting of ICs is rapidly progressing, and a wiring board having wiring patterns formed on both sides of a film substrate in order to increase the mounting density Is adopted. For example, Patent Document 1 discloses a wiring board in which wiring patterns are formed on both surfaces of a film substrate.

図7は特許文献1に記載された配線基板の模式的な底面図であり、図8はその模式的な断面図である。特許文献1に記載された配線基板100は、フィルム基板4と、フィルム基板4の両面にそれぞれ形成された表面配線パターン30および裏面配線パターン31とを有する。表面配線パターン30の端部には、IC1のバンプ2に接続される接続端子32が形成されている。IC1が搭載される領域を除いて、表面配線パターン30を覆うようにレジスト5が印刷され、表面配線パターン30がレジスト5により保護されている。同様に、フィルム基板4の裏面全面にもレジスト7が印刷され、レジスト7により裏面配線パターン31が保護されている。   FIG. 7 is a schematic bottom view of a wiring board described in Patent Document 1, and FIG. 8 is a schematic cross-sectional view thereof. A wiring substrate 100 described in Patent Document 1 includes a film substrate 4, and a front surface wiring pattern 30 and a back surface wiring pattern 31 formed on both surfaces of the film substrate 4, respectively. Connection terminals 32 connected to the bumps 2 of the IC 1 are formed at the ends of the surface wiring pattern 30. A resist 5 is printed so as to cover the surface wiring pattern 30 except for a region where the IC 1 is mounted, and the surface wiring pattern 30 is protected by the resist 5. Similarly, a resist 7 is printed on the entire back surface of the film substrate 4, and the back surface wiring pattern 31 is protected by the resist 7.

特許文献1に記載された配線基板100では、IC接続部における配線基板の厚みを一定にして接続不良を減少させるために、フィルム基板4の裏面で、IC1を実装するエリア全体を含む領域の全面にダミーパターン16が形成されている。また、IC1とフィルム基板4との間にアンダーフィル樹脂14を注入し硬化させることにより、IC1のバンプ2と接続端子32との電気的接続が保持されている。   In the wiring substrate 100 described in Patent Document 1, in order to reduce the connection failure by keeping the thickness of the wiring substrate in the IC connection portion constant, the entire surface including the entire area where the IC 1 is mounted on the back surface of the film substrate 4. A dummy pattern 16 is formed. Further, by injecting and curing the underfill resin 14 between the IC 1 and the film substrate 4, the electrical connection between the bumps 2 of the IC 1 and the connection terminals 32 is maintained.

一方、フィルム基板上へのICのフェイスダウン実装方法としては、異方性導電膜(ACF;Anisotropic Conductive Film )を用いた接続と、Au−Sn金属共晶接合とが主流となっている。ACFを用いてICを実装する場合、フィルム基板またはICにACFを仮付けし、ICとフィルム基板とを位置合わせして、両者を加圧する。このとき、フィルム基板とACFとの間に水分や気体が入り込むことがある。また、Au−Sn金属共晶接合においても、ICとフィルム基板との間にアンダーフィル樹脂を注入する際に気体を巻き込むことがある。熱圧着時またはリフロー加熱工程において、ICとフィルム基板との間の水分や気体が熱膨張して気泡となる。発生した気泡の寸法がある大きさ以上になると、ICとフィルム基板との接続信頼性が妨げられる。したがって、発生した気泡の寸法を熱圧着やリフロー加熱工程終了後に確認することが大切である。   On the other hand, as face-down mounting methods of ICs on a film substrate, connection using an anisotropic conductive film (ACF) and Au—Sn metal eutectic bonding are mainly used. When mounting an IC using an ACF, the ACF is temporarily attached to the film substrate or the IC, the IC and the film substrate are aligned, and both are pressurized. At this time, moisture or gas may enter between the film substrate and the ACF. Also, in Au—Sn metal eutectic bonding, gas may be involved when an underfill resin is injected between the IC and the film substrate. At the time of thermocompression bonding or in the reflow heating process, moisture and gas between the IC and the film substrate are thermally expanded to form bubbles. When the size of the generated bubbles exceeds a certain size, the connection reliability between the IC and the film substrate is hindered. Therefore, it is important to confirm the size of the generated bubbles after the thermocompression bonding or reflow heating process.

しかし、特許文献1に記載された配線基板100では、IC1を実装するエリア全体を含む領域の全面にダミーパターン16が形成されているので、配線基板の裏面側から目視により確認することができず、X線検査などが必要となる。また、フィルム基板の裏面にダミーパターンや配線パターンが形成されていない場合であっても、発生した気泡がICとフィルム基板の接続信頼性を妨げる寸法であるかを確認するには、計測器やテンプレート判定が必要である。さらに、X線検査や計測器、テンプレート判定は、確認が困難であったり、工程が煩雑であったりなど製造コストを上昇させる要因となる。
特許第3026205号公報
However, in the wiring substrate 100 described in Patent Document 1, since the dummy pattern 16 is formed on the entire surface including the entire area where the IC 1 is mounted, it cannot be visually confirmed from the back side of the wiring substrate. X-ray inspection is required. In addition, even if no dummy pattern or wiring pattern is formed on the back surface of the film substrate, in order to check whether the generated bubbles are of a size that hinders the connection reliability between the IC and the film substrate, Template determination is required. Furthermore, X-ray inspection, measuring instruments, and template determination are factors that increase manufacturing costs such as difficulty in confirmation and complicated processes.
Japanese Patent No. 3026205

本発明の目的はICとフィルム基板との間に発生する気泡の寸法を容易に確認することである。   An object of the present invention is to easily confirm the size of bubbles generated between an IC and a film substrate.

本発明では、絶縁基板の裏面であって集積回路チップ(IC)の実装領域内に気泡計測用パターンを形成した配線基板を提供することにより、上記課題を解決する。具体的に説明すると、本発明の配線基板は、絶縁基板と、前記絶縁基板の一方面に形成された第1配線パターンとを少なくとも有しており、前記第1配線パターンの端部に形成された接続端子にICのバンプが接続されることにより、前記ICが実装される配線基板であって、前記絶縁基板の他方面に形成され、かつ前記ICの実装領域内に形成された気泡計測用パターンを有する。   The present invention solves the above problem by providing a wiring board on which a bubble measurement pattern is formed in the mounting area of an integrated circuit chip (IC) on the back surface of an insulating substrate. More specifically, the wiring board of the present invention has at least an insulating substrate and a first wiring pattern formed on one surface of the insulating substrate, and is formed at an end of the first wiring pattern. A wiring board on which the IC is mounted by connecting the bumps of the IC to the connection terminals, which is formed on the other surface of the insulating substrate and is formed in the mounting area of the IC. Has a pattern.

気泡計測用パターンは、気泡の寸法が接続信頼性を妨げる寸法以上であるか否かを判断するためのパターンを有する。これにより、配線基板の裏面側から観察することによって、ICと配線基板との間に発生する気泡の寸法を気泡計測用パターンにより目視確認することができる。したがって、気泡の寸法が接続信頼性を妨げる寸法以上であると観察者が判断した場合には、その配線基板を製造ラインから除くことができる。すなわち、電気的な接続検査を行なう前に異常を発見することができるので、次工程への流出防止が可能となる。また、バンプと接続端子とを接続する際の加圧や加熱処理の条件設定に対して、素早くフィードバックすることができる。   The bubble measurement pattern has a pattern for determining whether or not the size of the bubble is greater than or equal to the size that hinders connection reliability. Thereby, by observing from the back surface side of the wiring board, the size of the bubble generated between the IC and the wiring board can be visually confirmed by the bubble measurement pattern. Therefore, if the observer determines that the size of the bubble is greater than or equal to the size that hinders connection reliability, the wiring board can be removed from the production line. That is, since an abnormality can be found before the electrical connection inspection is performed, the outflow to the next process can be prevented. In addition, it is possible to quickly feed back pressure and heat treatment condition settings when connecting the bump and the connection terminal.

本発明の配線基板は、配線パターンが絶縁基板の一方面だけでなく、絶縁基板の両面に形成された構成を含む。すなわち、本発明の配線基板は、絶縁基板の他方面に形成された第2配線パターンをさらに有していても良い。第2配線パターンは、前記ICの前記実装領域以外の領域に形成されていることが好ましい。第2配線パターンがICの実装領域以外の領域に形成されていることにより、言い換えれば第2配線パターンがICの実装領域内に形成されていないことにより、ICの実装領域における配線基板の厚みを一定にすることができるので、ICのバンプと接続端子との接続不良を減少させることができる。   The wiring board of the present invention includes a configuration in which the wiring pattern is formed not only on one surface of the insulating substrate but also on both surfaces of the insulating substrate. That is, the wiring board of the present invention may further include a second wiring pattern formed on the other surface of the insulating substrate. The second wiring pattern is preferably formed in a region other than the mounting region of the IC. Since the second wiring pattern is formed in an area other than the IC mounting area, in other words, the second wiring pattern is not formed in the IC mounting area, the thickness of the wiring board in the IC mounting area is reduced. Since it can be made constant, poor connection between the bumps of the IC and the connection terminals can be reduced.

本発明によれば、ICとフィルム基板との間に発生する気泡の寸法を容易に確認することができる。   According to the present invention, the size of bubbles generated between the IC and the film substrate can be easily confirmed.

以下、図面を参照しながら、本発明の配線基板を用いた電子回路素子および表示装置の実施形態を説明する。なお、以下の実施形態では、表示装置として液晶表示装置を例にして説明するが、本発明の配線基板は、液晶表示装置のみならず種々の表示装置、例えば有機または無機エレクトロルミネッセンス表示装置、プラズマディスプレイパネル、真空蛍光表示装置、電子ペーパーなどの各種表示装置に適用することができる。   Hereinafter, embodiments of an electronic circuit element and a display device using the wiring board of the present invention will be described with reference to the drawings. In the following embodiments, a liquid crystal display device will be described as an example of a display device. However, the wiring board of the present invention is not limited to a liquid crystal display device, but various display devices such as an organic or inorganic electroluminescence display device, plasma. The present invention can be applied to various display devices such as display panels, vacuum fluorescent display devices, and electronic paper.

図1は、実施形態の液晶表示装置を模式的に示す平面図である。この液晶表示装置は、液晶パネルPと、液晶パネルPの端部に接続されたフレキシブルプリント配線板FPCとを有する。フレキシブルプリント配線板FPCは、COF(Chip On Film)方式にて配線基板20上にベアチップ実装される液晶駆動用ICチップ(以下、「駆動用IC」という。)1を有する。   FIG. 1 is a plan view schematically showing a liquid crystal display device according to an embodiment. The liquid crystal display device includes a liquid crystal panel P and a flexible printed wiring board FPC connected to an end of the liquid crystal panel P. The flexible printed wiring board FPC has a liquid crystal driving IC chip (hereinafter referred to as “driving IC”) 1 that is bare-chip mounted on the wiring substrate 20 by a COF (Chip On Film) method.

液晶パネルPは、スイッチング素子が形成された素子基板と、素子基板に対向して配置された対向基板と、両基板間に介在する液晶層とを有する。両基板の液晶層側の面には、電極がそれぞれ形成されている。素子基板の面には、マトリクス状に配置された複数の画素電極が形成され、対向基板の面には、共通電極が形成されている。マトリクス状に配置された複数の画素電極は、それぞれの電圧印加を制御するTFT(Thin Film Transistor)に接続されている。TFTは、駆動用IC1に接続されたソース配線やゲート配線と接続されている。駆動用IC1からのゲート信号によって、TFTのスイッチングが制御され、マトリクス状に配置された複数の画素電極への電圧印加が制御される。これにより、画素ごとに液晶層の透過率が制御されて、階調表示が行われる。   The liquid crystal panel P includes an element substrate on which a switching element is formed, a counter substrate disposed to face the element substrate, and a liquid crystal layer interposed between the two substrates. Electrodes are formed on the surfaces of both substrates on the liquid crystal layer side. A plurality of pixel electrodes arranged in a matrix are formed on the surface of the element substrate, and a common electrode is formed on the surface of the counter substrate. The plurality of pixel electrodes arranged in a matrix are connected to TFTs (Thin Film Transistors) that control voltage application. The TFT is connected to a source wiring or a gate wiring connected to the driving IC 1. Switching of TFTs is controlled by a gate signal from the driving IC 1 and voltage application to a plurality of pixel electrodes arranged in a matrix is controlled. Thereby, the transmittance of the liquid crystal layer is controlled for each pixel, and gradation display is performed.

本実施形態の電子回路素子としてのフレキシブルプリント配線板FPCは、配線基板20に駆動用IC1がフェイスダウン実装された構造を有する。図2は駆動用IC1の実装領域およびその近傍における配線基板20の模式的な底面図であり、図3は駆動用IC1の実装領域およびその近傍における配線基板20の模式的な断面図である。   A flexible printed wiring board FPC as an electronic circuit element according to the present embodiment has a structure in which a driving IC 1 is mounted face-down on a wiring board 20. FIG. 2 is a schematic bottom view of the wiring substrate 20 in the mounting area of the driving IC 1 and the vicinity thereof, and FIG. 3 is a schematic cross-sectional view of the wiring board 20 in the mounting area of the driving IC 1 and the vicinity thereof.

配線基板20は、絶縁性を有するフィルム基板4と、フィルム基板4の両面にそれぞれ形成され、Cuなどからなる配線パターン30,31とを有する。フィルム基板4は主にポリイミドからなる。駆動用IC1は、Auからなる突起状のボンディング用バンプ電極(以下、「バンプ」という。)2を有している。駆動用IC1が実装される側のフィルム基板4の面(表面)には、コントロール基板(不図示)や液晶パネルPに接続された配線パターン(以下「第1配線パターン」という。)30が形成されている。駆動用IC1の実装領域内における第1配線パターン30の端部には、駆動用IC1のバンプ2と接続され、Snメッキ処理された接続端子(Snメッキ端子)32が形成されている。駆動用IC1の実装領域を除いて、エポキシ樹脂などからなるレジスト5がフィルム基板4上に形成されている。駆動用IC1と配線基板20との間には硬化材24が介在する。これにより、バンプ2と接続端子32との接続が安定に保持される。   The wiring substrate 20 includes an insulating film substrate 4 and wiring patterns 30 and 31 formed on both surfaces of the film substrate 4 and made of Cu or the like. The film substrate 4 is mainly made of polyimide. The driving IC 1 has a protruding bonding bump electrode (hereinafter referred to as “bump”) 2 made of Au. A wiring pattern (hereinafter referred to as “first wiring pattern”) 30 connected to a control substrate (not shown) and the liquid crystal panel P is formed on the surface (front surface) of the film substrate 4 on the side where the driving IC 1 is mounted. Has been. A connection terminal (Sn plated terminal) 32 that is connected to the bump 2 of the drive IC 1 and is subjected to Sn plating is formed at the end of the first wiring pattern 30 in the mounting area of the drive IC 1. A resist 5 made of an epoxy resin or the like is formed on the film substrate 4 except for the mounting area of the driving IC 1. A curing material 24 is interposed between the driving IC 1 and the wiring board 20. Thereby, the connection between the bump 2 and the connection terminal 32 is stably maintained.

一方、駆動用IC1が実装される側に対して反対側のフィルム基板4の面(裏面)には、第1配線パターン30がフィルム基板4の表面で交差するのを防ぐために、第1配線パターン30の一部が裏面に迂回した配線パターン(以下「第2配線パターン」という。)31が形成されている。図2に示すように、フィルム基板4の裏面の第2配線パターン31は、バンプ2と接続端子32との接続部(平面視において、バンプ2と接続端子32が重なる領域)から離れて配置されている。第2配線パターン31をバンプ2の接続部から離れて配置する理由は、第2配線パターン31がバンプ2と接続端子32との接続部の領域を横断した場合、第2配線パターン31の厚み分(5〜30μm程度)の高低差ができるので、バンプ2と接続端子32との安定した接続が困難となるからである。   On the other hand, in order to prevent the first wiring pattern 30 from crossing on the surface of the film substrate 4 on the surface (back surface) of the film substrate 4 opposite to the side on which the driving IC 1 is mounted, A wiring pattern (hereinafter referred to as “second wiring pattern”) 31 in which a part of 30 is bypassed on the back surface is formed. As shown in FIG. 2, the second wiring pattern 31 on the back surface of the film substrate 4 is arranged away from the connection portion between the bump 2 and the connection terminal 32 (a region where the bump 2 and the connection terminal 32 overlap in plan view). ing. The reason why the second wiring pattern 31 is arranged away from the connection portion of the bump 2 is that when the second wiring pattern 31 crosses the region of the connection portion between the bump 2 and the connection terminal 32, the thickness of the second wiring pattern 31 is the same. This is because a difference in height (about 5 to 30 μm) can be made, so that stable connection between the bump 2 and the connection terminal 32 becomes difficult.

フィルム基板4の裏面であって、かつ駆動用IC1が実装される領域内には、気泡計測用パターンが形成されている。気泡計測用パターンは、マトリクス状に配置された複数の開口8を有する膜6により構成されている。膜6は第2配線パターン31と同じ材料、例えばCuから形成されても良い。なお、特に問題がない場合には、第2配線パターン31が膜6と接続していても良い。   A bubble measurement pattern is formed on the back surface of the film substrate 4 and in a region where the driving IC 1 is mounted. The bubble measurement pattern includes a film 6 having a plurality of openings 8 arranged in a matrix. The film 6 may be formed of the same material as the second wiring pattern 31, for example, Cu. If there is no particular problem, the second wiring pattern 31 may be connected to the film 6.

本実施形態では、膜6はバンプ2の配置に沿った外周を有する四角形状であり、第2配線パターン31と略同じ膜厚を有する。複数の開口8は駆動用IC1のバンプ2よりも内側に、言い換えればバンプ2に包囲された領域内に形成されている。開口8がバンプ2と重ならないように形成されているので、バンプ2と接続端子32との接続部における配線基板20の厚みが一定となり、接続不良を減少させることができる。   In the present embodiment, the film 6 has a quadrangular shape having an outer periphery along the arrangement of the bumps 2 and has substantially the same film thickness as the second wiring pattern 31. The plurality of openings 8 are formed inside the bumps 2 of the driving IC 1, in other words, in a region surrounded by the bumps 2. Since the openings 8 are formed so as not to overlap the bumps 2, the thickness of the wiring substrate 20 at the connection portion between the bumps 2 and the connection terminals 32 becomes constant, and connection failures can be reduced.

膜6はバンプ2と接続端子32との接続部を少なくとも含む領域に形成されていれば良く、図2に示す態様に限定されない。例えば、駆動用IC1に重なる領域に膜6が形成されていても良い。この場合、バンプ2よりも外側に開口8がさらに形成されていても良い。   The film 6 may be formed in a region including at least the connection portion between the bump 2 and the connection terminal 32, and is not limited to the mode shown in FIG. For example, the film 6 may be formed in a region overlapping with the driving IC 1. In this case, an opening 8 may be further formed outside the bump 2.

フィルム基板4の裏面には、弾力性のある絶縁被膜7が形成されている。絶縁被膜7として、例えばエポキシ樹脂などからなるレジストを用いることができる。絶縁被膜7は、フィルム基板4の裏側全面に形成され、第2配線パターン31および膜6が絶縁被膜7に覆われている。フィルム基板4の裏面に弾力性のある絶縁被膜7が形成されているので、バンプ2のバンプ高さバラツキと接続端子32の端子高さバラツキとによる圧力の不均一性が緩和される。したがって、バンプ2と接続端子32とをより安定して接続させることができる。また、接続時に配線基板20とステージとの間に異物をかみ込んだ場合の緩衝効果も得られる。   An elastic insulating film 7 is formed on the back surface of the film substrate 4. As the insulating film 7, for example, a resist made of epoxy resin can be used. The insulating film 7 is formed on the entire back side of the film substrate 4, and the second wiring pattern 31 and the film 6 are covered with the insulating film 7. Since the insulating coating 7 having elasticity is formed on the back surface of the film substrate 4, pressure non-uniformity due to the bump height variation of the bumps 2 and the terminal height variation of the connection terminals 32 is alleviated. Therefore, the bump 2 and the connection terminal 32 can be connected more stably. Further, a buffering effect can be obtained when foreign matter is caught between the wiring board 20 and the stage at the time of connection.

本実施形態の配線基板20は、キャスティング法やアディティブ法などによってフィルム基板4に第1および第2配線パターン30,31や膜6を形成し、さらに印刷法などによりレジスト5および絶縁被膜7を形成することによって、製造することができる。なお、フォトリソグラフィ法によって、膜6に開口8を形成しても良い。   In the wiring substrate 20 of this embodiment, the first and second wiring patterns 30 and 31 and the film 6 are formed on the film substrate 4 by a casting method or an additive method, and the resist 5 and the insulating film 7 are formed by a printing method or the like. By doing so, it can be manufactured. Note that the opening 8 may be formed in the film 6 by photolithography.

次に、配線基板20に駆動用IC1をフェイスダウン実装する工程について説明する。異方性導電膜(ACF)を用いた接続方法では、接続端子32を覆うように、フィルム基板4上にACFを貼り付け、駆動用IC1を位置合わせした後、ツール(不図示)で加熱加圧して駆動用IC1のバンプ2と接続端子32とを接続する。異方性導電膜は、主成分がエポキシ樹脂の接着材と、接着材中に分散された金属膜被覆プラスチック微粒子とを有する。金属膜被覆プラスチック微粒子は、プラスチックビーズに金属メッキを施した導電粒子である。エポキシ樹脂は熱硬化型であり、接続温度180〜210℃で加熱加圧することによって、導電粒子がバンプ2と接続端子32とで挟まれた状態となり、エポキシ樹脂中の接着材が熱硬化して電気的接続が保持される。   Next, a process of face-down mounting the driving IC 1 on the wiring board 20 will be described. In the connection method using the anisotropic conductive film (ACF), the ACF is pasted on the film substrate 4 so as to cover the connection terminal 32, the driving IC 1 is aligned, and then heated with a tool (not shown). The bump 2 of the driving IC 1 and the connection terminal 32 are connected by pressing. The anisotropic conductive film has an adhesive whose main component is an epoxy resin and metal film-coated plastic fine particles dispersed in the adhesive. The metal film-coated plastic fine particles are conductive particles obtained by performing metal plating on plastic beads. The epoxy resin is a thermosetting type, and by applying heat and pressure at a connection temperature of 180 to 210 ° C., the conductive particles are sandwiched between the bumps 2 and the connection terminals 32, and the adhesive in the epoxy resin is thermoset. Electrical connection is maintained.

Au−Sn金属共晶接合による接続方法では、Auからなるバンプ2を形成した駆動用IC1とSnメッキを施した接続端子32とを400℃で熱圧着して、Snメッキを溶融させて、Au−Sn共晶物により金属共晶接合する。駆動用IC1をフィルム基板4上に金属共晶接合した後に、駆動用IC1とフィルム基板4との隙間にエポキシ系樹脂などの絶縁性のアンダーフィル樹脂を注入し、接続部分を被覆して安定させる。   In the connection method by Au—Sn metal eutectic bonding, the driving IC 1 on which the bump 2 made of Au is formed and the connection terminal 32 subjected to Sn plating are thermocompression bonded at 400 ° C. to melt the Sn plating, and Au -Metal eutectic bonding with Sn eutectic. After the driving IC 1 is metal eutectic bonded onto the film substrate 4, an insulating underfill resin such as an epoxy resin is injected into the gap between the driving IC 1 and the film substrate 4, and the connection portion is covered and stabilized. .

NCP(Non Conductive Paste)またはNCF(Non Conductive Film )を用いた低温接続方法では、配線基板20上の駆動用IC1実装領域に、NCP(粘性のある液状の絶縁樹脂)を塗布するか、あるいはNCF(フィルム状の絶縁樹脂)を貼り付ける。配線基板20と駆動用IC1との位置合わせを行う。圧着ツール(不図示)を用いて、上記のAu−Sn金属共晶接合の場合よりも低温の200℃前後で加熱しながら加圧して、IC1のバンプ2とフィルム基板4の接続端子32とを金属接合する。なお、SnとAuの融点はそれぞれ232℃、1064℃であるので、接続時は両方とも溶融していない。   In the low-temperature connection method using NCP (Non Conductive Paste) or NCF (Non Conductive Film), NCP (viscous liquid insulating resin) is applied to the driving IC1 mounting region on the wiring board 20, or NCF Affix (film-like insulating resin). The wiring board 20 and the driving IC 1 are aligned. Using a crimping tool (not shown), the bumps 2 of the IC 1 and the connection terminals 32 of the film substrate 4 are pressed while being heated at around 200 ° C., which is lower than in the case of the Au—Sn metal eutectic bonding. Join metal. Since the melting points of Sn and Au are 232 ° C. and 1064 ° C., respectively, both are not melted at the time of connection.

上記のいずれの接続方法においても、駆動用IC1とフィルム基板4との間に付着したした水分や入り込んだ気体が熱圧着時またはリフロー加熱工程において熱膨張して気泡が発生するおそれがある。   In any of the connection methods described above, there is a risk that bubbles adhering between the driving IC 1 and the film substrate 4 may expand due to thermal expansion during the thermocompression bonding or the reflow heating process.

図4は駆動用IC1とフィルム基板4との間に気泡13が発生した状態を示す模式的に示す断面図である。本実施形態の配線基板20では、膜6が開口8を有するので、開口8がある領域と開口8がない領域とで可視光の透過率が異なる。言い換えれば、気泡計測用パターンは、可視光の透過率が異なる複数の領域を含む膜6により形成されている。これにより、観察者が配線基板20の裏面側から観察することにより、気泡13の存在を確認することができる。また、複数の開口8は所定のピッチでマトリクス状に配置されているので、気泡13に重なる開口8の数を数えることにより、あるいは気泡13と開口8の寸法を比較することにより、気泡13の寸法を計測することができる。なお、非限定的に例示すれば、開口8のピッチは0.2μm以上0.4μm以下程度であり、開口8の径は0.1μm以上0.2μm以下程度である。   FIG. 4 is a cross-sectional view schematically showing a state in which bubbles 13 are generated between the driving IC 1 and the film substrate 4. In the wiring substrate 20 of this embodiment, since the film 6 has the opening 8, the visible light transmittance is different between the region having the opening 8 and the region having no opening 8. In other words, the bubble measurement pattern is formed by the film 6 including a plurality of regions having different visible light transmittances. Thereby, the presence of the bubble 13 can be confirmed by the observer observing from the back side of the wiring board 20. Further, since the plurality of openings 8 are arranged in a matrix at a predetermined pitch, by counting the number of openings 8 overlapping the bubbles 13 or comparing the dimensions of the bubbles 13 and the openings 8, Dimensions can be measured. As a non-limiting example, the pitch of the openings 8 is about 0.2 μm to 0.4 μm, and the diameter of the openings 8 is about 0.1 μm to 0.2 μm.

本実施形態では、複数の開口8を有する膜6が第2配線パターン31と同じ材料(Cu)により形成されているが、膜6が第2配線パターン31と異なる材料から形成されていても良い。例えば、膜6がカラーフィルタ材料やブラックマトリクスなどの非導電性材料から形成されていても良い。また、本実施形態では、膜6に開口を形成することにより、可視光の透過率が異なる複数の領域を膜6に形成しているが、これに限定されない。例えば、色調が異なる複数の領域を形成しても良い。   In the present embodiment, the film 6 having the plurality of openings 8 is formed of the same material (Cu) as the second wiring pattern 31, but the film 6 may be formed of a material different from that of the second wiring pattern 31. . For example, the film 6 may be formed of a non-conductive material such as a color filter material or a black matrix. In the present embodiment, a plurality of regions having different visible light transmittances are formed in the film 6 by forming openings in the film 6, but the present invention is not limited to this. For example, a plurality of regions having different color tones may be formed.

本実施形態では開口8の形状が円形状であるが、これに限定されない。図5および図6はそれぞれ本実施形態の変形例を模式的に示す底面図である。図5に示す配線基板30は開口9の形状が四角形状であり、図6に示す配線基板40は開口10の形状が菱形状である。   In the present embodiment, the shape of the opening 8 is circular, but is not limited thereto. 5 and 6 are bottom views schematically showing modifications of the present embodiment. The wiring board 30 shown in FIG. 5 has a square shape in the opening 9, and the wiring board 40 shown in FIG. 6 has a diamond shape in the opening 10.

また、本実施形態では複数の開口8が行方向および列方向に直線状に配置されているが、例えば、列方向に千鳥状に配置され、行方向に直線状に配置されていても良い。さらに、複数の開口8はバンプ2に囲まれた領域内に均等に配置されているが、気泡13の発生する可能性が高い領域にのみ開口8を配置して、IC実装領域内で開口8が不均一に分布していても良い。   In the present embodiment, the plurality of openings 8 are linearly arranged in the row direction and the column direction. However, for example, they may be arranged in a staggered pattern in the column direction and linearly in the row direction. Further, the plurality of openings 8 are evenly arranged in the region surrounded by the bumps 2. However, the openings 8 are arranged only in the region where the bubbles 13 are likely to be generated, and the openings 8 are formed in the IC mounting region. May be non-uniformly distributed.

本実施形態によれば、熱膨張した気泡の寸法を視覚的に確認することができ、バンプ2と接続端子32との接続信頼性が損なわれる寸法の気泡13の入った配線基板20を製造ラインから除くことができる。観察者により異常がないと判断された配線基板20に、コンデンサや抵抗などのチップ部品、半導体パッケージをSMT(Surface Mount Technology)にて実装することにより、電子回路素子(FPC)が製造される。さらに、ACFなどを用いて、フレキシブルプリント配線板FPCを液晶パネルPの端部に接続する。以上の工程を経て、本実施形態の液晶表示装置が製造される。   According to the present embodiment, the dimensions of the thermally expanded bubbles can be visually confirmed, and the wiring board 20 containing the bubbles 13 having dimensions that impair the connection reliability between the bumps 2 and the connection terminals 32 is manufactured on the production line. Can be removed from. An electronic circuit element (FPC) is manufactured by mounting chip parts such as capacitors and resistors, and a semiconductor package on the wiring board 20 determined to be normal by an observer using SMT (Surface Mount Technology). Further, the flexible printed wiring board FPC is connected to the end of the liquid crystal panel P using ACF or the like. The liquid crystal display device of this embodiment is manufactured through the above steps.

以上、実施形態に基づいて本発明を説明したが、本発明の技術的範囲は上記実施形態に記載の範囲には限定されない。上記実施形態は例示であり、それらの各構成要素や各処理プロセスの組合せに、さらにいろいろな変形例が可能なこと、またそうした変形例も本発明の範囲にあることは当業者に理解されるところである。例えば、上記実施形態ではTFTを用いたアクティブマトリクス型液晶表示装置を例にして説明した。しかし、本発明の表示装置は、TFTなどの3端子素子だけでなく、MIM(Metal Insulator Metal) などの2端子素子をスイッチング素子とするアクティブマトリクス型液晶表示装置であっても良い。また、本発明の表示装置は、アクティブ駆動型の表示装置だけでなく、パッシブ(マルチプレックス)駆動型の表示装置にも適用することができる。さらに、本発明の表示装置は、透過型、反射型、透過反射両用型のいずれのタイプの表示装置にも適用できる。   As mentioned above, although this invention was demonstrated based on embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. Those skilled in the art will understand that the above-described embodiments are exemplifications, and that various modifications can be made to combinations of the respective constituent elements and processing processes, and such modifications are also within the scope of the present invention. By the way. For example, in the above embodiment, the active matrix liquid crystal display device using TFTs has been described as an example. However, the display device of the present invention may be an active matrix liquid crystal display device using not only a three-terminal element such as a TFT but also a two-terminal element such as an MIM (Metal Insulator Metal) as a switching element. The display device of the present invention can be applied not only to an active drive type display device but also to a passive (multiplex) drive type display device. Furthermore, the display device of the present invention can be applied to any type of display device of transmissive type, reflective type, and transmissive / reflective type.

本発明は、液晶表示装置などの各種表示装置、携帯電話、携帯型ゲーム機器、電子手帳、携帯情報端末、音楽情報端末、映像情報端末などに利用することができる。   The present invention can be used for various display devices such as liquid crystal display devices, mobile phones, portable game devices, electronic notebooks, portable information terminals, music information terminals, video information terminals, and the like.

実施形態の液晶表示装置を模式的に示す平面図である。It is a top view which shows the liquid crystal display device of embodiment typically. 駆動用IC1の実装領域およびその近傍における配線基板20の模式的な底面図である。FIG. 5 is a schematic bottom view of the wiring board 20 in the mounting area of the driving IC 1 and in the vicinity thereof. 駆動用IC1の実装領域およびその近傍における配線基板20の模式的な断面図である。2 is a schematic cross-sectional view of a wiring board 20 in a mounting area of the driving IC 1 and in the vicinity thereof. FIG. 駆動用IC1とフィルム基板4との間に気泡13が発生した状態を示す模式的に示す断面図である。FIG. 4 is a cross-sectional view schematically showing a state in which bubbles 13 are generated between the driving IC 1 and the film substrate 4. 実施形態の変形例を模式的に示す底面図である。It is a bottom view showing typically the modification of an embodiment. 実施形態の変形例を模式的に示す底面図である。It is a bottom view showing typically the modification of an embodiment. 特許文献1に記載された配線基板の模式的な底面図である。It is a typical bottom view of the wiring board described in patent documents 1. 特許文献1に記載された配線基板の模式的な断面図である。It is a typical sectional view of a wiring board indicated in patent documents 1.

符号の説明Explanation of symbols

1 駆動用IC
2 バンプ
4 フィルム基板
5 レジスト
6 膜
7 絶縁被膜(レジスト)
8,9,10 開口
13 気泡
14 アンダーフィル樹脂
16 ダミーパターン
20,21,22 配線基板
24 硬化材
30 第1配線パターン(表面配線パターン)
31 第2配線パターン(裏面配線パターン)
32 接続端子
100 配線基板
1 Driving IC
2 Bump 4 Film substrate 5 Resist 6 Film 7 Insulating coating (resist)
8, 9, 10 Opening 13 Air bubbles 14 Underfill resin 16 Dummy pattern 20, 21, 22 Wiring board 24 Curing material 30 First wiring pattern (surface wiring pattern)
31 Second wiring pattern (back wiring pattern)
32 Connection terminal 100 Wiring board

Claims (7)

絶縁基板と、前記絶縁基板の一方面に形成された第1配線パターンとを少なくとも有しており、前記第1配線パターンの端部に形成された接続端子に集積回路チップのバンプが接続されることにより、前記集積回路チップが実装される配線基板であって、
前記絶縁基板の他方面に形成され、かつ前記集積回路チップの実装領域内に形成された気泡計測用パターンを有する配線基板。
It has at least an insulating substrate and a first wiring pattern formed on one surface of the insulating substrate, and bumps of the integrated circuit chip are connected to connection terminals formed at end portions of the first wiring pattern. A wiring board on which the integrated circuit chip is mounted,
A wiring substrate having a bubble measurement pattern formed on the other surface of the insulating substrate and formed in a mounting region of the integrated circuit chip.
前記絶縁基板の他方面に形成され、かつ前記集積回路チップの前記実装領域以外の領域に形成された第2配線パターンをさらに有する、請求項1に記載の配線基板。 The wiring board according to claim 1, further comprising a second wiring pattern formed on the other surface of the insulating substrate and formed in a region other than the mounting region of the integrated circuit chip. 前記集積回路チップと前記絶縁基板との間に、異方性導電膜または硬化材が介在する、請求項1に記載の配線基板。 The wiring substrate according to claim 1, wherein an anisotropic conductive film or a curing material is interposed between the integrated circuit chip and the insulating substrate. 前記気泡計測用パターンは、可視光の透過率が異なる複数の領域を含む膜により形成されている、請求項1に記載の配線基板。 The wiring board according to claim 1, wherein the bubble measurement pattern is formed of a film including a plurality of regions having different visible light transmittances. 前記気泡計測用パターンは、マトリクス状に配置された複数の開口を有する膜により形成されている、請求項1に記載の配線基板。 The wiring board according to claim 1, wherein the bubble measurement pattern is formed of a film having a plurality of openings arranged in a matrix. 請求項1から5のいずれか1項に記載の配線基板と、前記集積回路チップとを有する電子回路素子。 An electronic circuit element comprising the wiring board according to claim 1 and the integrated circuit chip. 請求項6に記載の電子回路素子を有する表示装置。
A display device comprising the electronic circuit element according to claim 6.
JP2005118696A 2005-04-15 2005-04-15 WIRING BOARD, ELECTRONIC CIRCUIT ELEMENT HAVING THE SAME, AND DISPLAY DEVICE Expired - Fee Related JP4484750B2 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009070865A (en) * 2007-09-11 2009-04-02 Rohm Co Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009070865A (en) * 2007-09-11 2009-04-02 Rohm Co Ltd Semiconductor device

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