JP2006294938A - Rupturing method for adhesive film - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a fusing and rupturing method for a adhesive film stuck on the rear face of a semiconductor wafer by a laser beam without being influenced by debris. <P>SOLUTION: The adhesive film 5 is stuck on the rear face of the semiconductor wafer 10 which is separated into a plurality of semiconductor chips, and the adhesive film side is stuck on the surface of dicing tape 60 mounted on an annular frame 7. This method comprises the steps of mounting the dicing tape on a pinching frame surrounding the semiconductor wafer 10 for pinching the dicing tape between the outer circumferential surface of a small diameter ring 7b and the inner circumferential surface of a large diameter ring 7a, by using the pinching frame 7 consisting of the large diameter ring 7a having a diameter larger than the semiconductor wafer 10 and the small diameter ring 7b; mounting closing-tape for closing the space formed by the pinching frame and the dicing tape; and fusing and rupturing the adhesive film 5 along dividing grooves, by irradiating along the dividing grooves from the rear face side of the dicing tape 60 with a laser beam whose wavelength being not absorbed by the dicing tape but absorbed by the adhesive tape. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an adhesive film breaking method for breaking an adhesive film for die bonding bonded to the back surface of a semiconductor wafer separated into a plurality of semiconductor chips.

  For example, in a semiconductor device manufacturing process, devices such as IC and LSI are formed in a plurality of regions partitioned by streets (planned cutting lines) formed in a lattice shape on the surface of a semiconductor wafer having a substantially disk shape, Individual semiconductor chips are manufactured by dividing each region in which the device is formed along a street. A dicing apparatus is generally used as a dividing apparatus for dividing a semiconductor wafer, and the dicing apparatus cuts the semiconductor wafer along the street with a cutting blade having a thickness of about 20 μm. The semiconductor chip thus divided is packaged and widely used in electric devices such as mobile phones and personal computers.

Individually divided semiconductor chips are mounted on the back with an adhesive film for die bonding called die attach film with a thickness of 20 to 40 μm formed of polyimide resin, epoxy resin, acrylic resin fat, etc. Bonding is performed by heating to a die bonding frame that supports the semiconductor chip via this adhesive film. As a method of attaching the adhesive film for die bonding to the back surface of the semiconductor chip, the adhesive film is attached to the back surface of the semiconductor wafer, the semiconductor wafer is attached to the dicing tape through the adhesive film, and then the semiconductor wafer By cutting along with the adhesive film with a cutting blade along the street formed on the front surface, a semiconductor chip having the adhesive film mounted on the back surface is formed. (For example, refer to Patent Document 1.)
JP 2000-182959 A

  However, according to the method disclosed in Japanese Patent Application Laid-Open No. 2000-182959, when the adhesive film is cut together with the semiconductor wafer by a cutting blade and divided into individual semiconductor chips, chipping occurs on the back surface of the semiconductor chip or adhesion occurs. There is a problem in that wrinkle-like burrs are generated in the film and cause breakage during wire bonding.

  In recent years, electric devices such as mobile phones and personal computers are required to be lighter and smaller, and a thinner semiconductor chip is required. As a technique for dividing a semiconductor chip thinner, a dividing technique called a so-called first dicing method has been put into practical use. In this tip dicing method, a divided groove having a predetermined depth (a depth corresponding to the finished thickness of the semiconductor chip) is formed along the street from the surface of the semiconductor wafer, and then the semiconductor wafer having the divided grooves formed on the surface thereof. In this technique, the rear surface of the semiconductor chip is ground so that a dividing groove is exposed on the rear surface and separated into individual semiconductor chips. The thickness of the semiconductor chip can be reduced to 50 μm or less.

  However, when the semiconductor wafer is divided into individual semiconductor chips by the tip dicing method, after forming a dividing groove having a predetermined depth along the street from the surface of the semiconductor wafer, the back surface of the semiconductor wafer is ground and the back surface is ground. Therefore, the die bonding adhesive film cannot be attached to the back surface of the semiconductor wafer in advance. Therefore, when bonding to the die bonding frame that supports the semiconductor chip by the prior dicing method, the bonding agent must be inserted between the semiconductor chip and the die bonding frame, and the bonding operation is performed smoothly. There is a problem that can not be.

In order to solve such a problem, after attaching an adhesive film for die bonding to the back surface of each semiconductor chip divided by prior dicing, and attaching the semiconductor chip to the dicing tape via this adhesive film A semiconductor chip in which the portion of the adhesive film exposed in the gap between the semiconductor chips is irradiated with a laser beam from the surface side of the semiconductor chip through the gap to remove the portion of the adhesive film exposed in the gap. The manufacturing method of this is proposed. (For example, see Patent Document 2.)
JP 2002-118081 A

  However, in the technique disclosed in Japanese Patent Application Laid-Open No. 2002-118081, a laser beam is irradiated from the surface side of the semiconductor chip to the divided grooves formed by a cutting blade having a thickness of about 20 μm between the semiconductor chips in the adhesive film. Some of the portions exposed in the gap are melted, and it is difficult to melt only the adhesive film without irradiating the surface of the semiconductor chip with a laser beam. In particular, when the cutting grooves are misaligned during the back surface grinding of the semiconductor wafer by tip dicing, it is difficult to melt only the adhesive film without irradiating the surface of the semiconductor chip with a laser beam. Therefore, in the method for manufacturing a semiconductor chip disclosed in the above publication, there is a risk that the surface of the semiconductor chip on which the device is formed is damaged by the laser beam.

  In order to solve the above-mentioned problem, the present applicant attaches an adhesive film for die bonding to the back surface of a semiconductor wafer divided into individual semiconductor chips by prior dicing, and uses the adhesive film side of the semiconductor wafer as a dicing tape. A semiconductor chip manufacturing method in which a laser beam having a wavelength that is not absorbed by the dicing tape along the dividing groove but is absorbed by the dicing tape from the dicing tape side is irradiated to the adhesive film, and the adhesive film is melted along the dividing groove. Was proposed as Japanese Patent Application No. 2003-348277.

  Thus, in the semiconductor chip manufacturing method proposed as the above Japanese Patent Application No. 2003-348277, the surface side of the semiconductor wafer adhered to the dicing tape via the adhesive film is held on the chuck table portion of the laser processing apparatus. In addition, a protective tape is attached to the surface of the semiconductor wafer so as not to damage the device formed on the surface of the semiconductor wafer. For this reason, when the adhesive film is irradiated with a laser beam having a wavelength that is not absorbed by the dicing tape along the dividing groove from the dicing tape side, the debris generated by melting of the adhesive film loses its escape field and becomes a dividing groove. The deposited and divided semiconductor chips are bonded to each other by debris, so that it becomes difficult to pick up the semiconductor chips.

  The present invention has been made in view of the above-mentioned facts, and its main technical problem is that a semiconductor wafer separated into individual semiconductor chips without being affected by debris generated by melting of an adhesive film by irradiation with a laser beam. It is providing the fracture | rupture method of the adhesive film which can melt | fuse the adhesive film stuck on the back surface of this.

In order to solve the above main technical problem, according to the present invention, an adhesive film for die bonding is attached to the back surface of a semiconductor wafer separated into a plurality of semiconductor chips, and the adhesive film side of the semiconductor wafer is formed into an annular frame. The adhesive film is attached to the surface of a mounted dicing tape, and the adhesive film is cut along the divided grooves separated into the plurality of semiconductor chips.
Using a sandwiching frame made up of a large-diameter ring and a small-diameter ring having a diameter larger than that of the semiconductor wafer, the small-diameter ring is positioned so as to surround the semiconductor wafer on the surface side of the dicing tape, and the large-diameter ring is positioned on the dicing tape. The dicing tape is placed between the outer peripheral surface of the small-diameter ring and the inner peripheral surface of the large-diameter ring by positioning the small-diameter ring on the back surface side and fitting the large-diameter ring with the small-diameter ring. A clamping frame mounting process for clamping;
A closing tape mounting step of mounting on the surface side of the dicing tape and closing the space formed by the sandwiching frame and the dicing tape with a closing tape;
Adhesive film fusing step of irradiating the adhesive film with a laser beam having a wavelength that is not absorbed by the dicing tape from the back side of the dicing tape but along the divided grooves, and fusing the adhesive film along the divided grooves Including,
An adhesive film breaking method is provided.

  According to the present invention, when the adhesive film is melted in the adhesive film cutting process, the adhesive film is melted and debris is generated when the adhesive film is melted, but falls onto the closing tape through the division grooves formed in the semiconductor wafer. To do. Therefore, adjacent semiconductor chips are not joined by debris.

  Hereinafter, preferred embodiments of a method for breaking an adhesive film according to the present invention will be described in detail with reference to the accompanying drawings.

First, a method for dividing a semiconductor wafer into a plurality of semiconductor chips by the first dicing method will be described.
FIG. 1 shows a perspective view of a semiconductor wafer divided into a plurality of semiconductor chips. A semiconductor wafer 10 shown in FIG. 1 is made of, for example, a silicon wafer having a thickness of 600 μm. A plurality of streets 101 are formed in a lattice shape on the surface 2 a and a plurality of regions defined by the plurality of streets 101 are formed. A device 102 is formed. The semiconductor wafer 2 is cut along a plurality of streets 101 and divided into individual semiconductor chips.

  In order to divide the semiconductor wafer 10 into individual semiconductor chips by the tip dicing method, first, a predetermined depth (a depth corresponding to the finished thickness of each semiconductor chip) is formed along the street 101 formed on the surface 10a of the semiconductor wafer 10. ) Is formed (divided groove forming step). In this dividing groove forming step, a cutting device 2 generally used as a dicing device can be used as shown in FIG. In other words, the cutting device 2 includes a chuck table 21 having a suction holding unit and a cutting unit 23 having a cutting blade 22. By holding the surface 10a of the semiconductor wafer 2 on the chuck table 21 of the cutting apparatus 2 and rotating the cutting blade 22 of the cutting means 23 and cutting and feeding the chuck table 21 in the direction indicated by the arrow X, A dividing groove 103 is formed along a street 101 extending in a predetermined direction. The dividing groove 103 is set to a depth (for example, 110 μm) corresponding to the finished thickness of each semiconductor chip to be divided as shown in FIG. When the dividing groove 103 is formed along the street 101 extending in a predetermined direction as described above, the cutting means 23 is indexed and fed in the direction indicated by the arrow Y by the interval of the street 101, and the cutting feed is performed again. Then, if the cutting feed and the index feed are performed for all the streets 101 extending in a predetermined direction, the chuck table 21 is rotated by 90 degrees so that each street 101 extending at a right angle to the predetermined direction. The dividing groove 103 is formed along all the streets 101 formed in the semiconductor wafer 10 by executing the cutting feed and the indexing feed along.

  When the dividing groove 103 having a predetermined depth is formed along the street 101 on the surface 10a of the semiconductor wafer 10 by the above-described dividing groove forming step, the semiconductor wafer 10 is formed as shown in FIGS. 3 (a) and 3 (b). The protective member 3 for grinding is stuck on the surface 10a (surface on which the device 102 is formed) (protective member sticking step). In the illustrated embodiment, the protective member 3 is a polyolefin sheet having a thickness of 150 μm.

  Next, the back surface 10b of the semiconductor wafer 10 having the protective member 3 attached to the front surface is ground, and the divided grooves 103 are exposed on the back surface 10b and divided into individual semiconductor chips (divided groove exposing step). This dividing groove exposing step is performed by a grinding apparatus 4 including a grinding means 43 having a chuck table 41 and a grinding wheel 42 as shown in FIG. That is, the semiconductor wafer 10 is held on the chuck table 41 with the back surface 10b facing up. For example, while the chuck table 41 is rotated at 300 rpm, the grinding wheel 42 of the grinding means 43 is rotated at 6000 rpm, so that the back surface of the semiconductor wafer 10 is obtained. It grinds by contacting 2b, and grinds until the division | segmentation groove | channel 103 appears on the back surface 10b, as shown in FIG.4 (b). By grinding until the dividing grooves 103 are exposed in this way, the semiconductor wafer 10 is separated into individual semiconductor chips 100 as shown in FIG. In addition, since the protective member 3 is stuck on the surface of the separated semiconductor chips 100, the form of the semiconductor wafer 10 is maintained without being separated.

  If the semiconductor wafer 10 is separated into the individual semiconductor chips 100 by the above-described dicing method, an adhesive film attaching process for attaching an adhesive film to the back surface 10b of the semiconductor wafer 10 separated into the individual semiconductor chips is performed. . That is, as shown in FIGS. 5A and 5B, the adhesive film 5 is attached to the back surface 10b of the semiconductor wafer 10 separated into individual semiconductor chips. At this time, the adhesive film 5 is pressed against the back surface 10b of the semiconductor wafer 10 while being heated at a temperature of 80 to 200 ° C. The adhesive film 5 is formed of, for example, a polyimide resin, an epoxy resin, or an acrylic resin having a thickness of 25 μm.

  If the adhesive film attaching process is performed as described above, the dicing tape for attaching the adhesive film 5 side of the semiconductor wafer 10 in which the adhesive film 5 is attached to the extensible dicing tape attached to the annular frame. The sticking process is carried out. That is, as shown in FIGS. 6A and 6B, the adhesive film 5 of the semiconductor wafer 10 is attached to the surface 60a of the dicing tape 60 having the outer peripheral portion mounted so as to cover the inner opening of the annular dicing frame 6. Stick the side. Accordingly, the protective member 3 attached to the surface of the semiconductor wafer 10 is on the upper side. The dicing tape 60 is formed of a polyolefin sheet having a thickness of 95 μm in the illustrated embodiment. In addition, as the dicing tape 60, a UV tape having a property that the adhesive force is reduced by an external stimulus such as ultraviolet rays is used.

Another embodiment of the above-described adhesive film sticking step and dicing tape sticking step will be described with reference to FIG.
The embodiment shown in FIG. 7 uses a dicing tape with an adhesive film in which an adhesive film is bonded in advance to the surface of the dicing tape. That is, as shown in FIGS. 7A and 7B, the adhesive film 5 adhered to the surface 60a of the dicing tape 60 having the outer peripheral portion mounted so as to cover the inner opening of the annular dicing frame 6 is attached. It adheres to the back surface 10b of the semiconductor wafer 10 separated into individual semiconductor chips. At this time, the adhesive film 5 is pressed and adhered to the back surface 10b of the semiconductor wafer 10 while being heated at a temperature of 80 to 200 ° C. The dicing tape 60 is a polyolefin sheet having a thickness of 95 μm in the illustrated embodiment. As such a dicing tape with an adhesive film, a dicing tape with an adhesive film (LE5000) manufactured by Lintec Corporation can be used.

If the adhesive film sticking step and the dicing tape sticking step described above are performed, a holding frame body composed of a large-diameter ring and a small-diameter ring larger in diameter than the semiconductor wafer is used, and the dicing tape 60 surrounds the semiconductor wafer 10. Then, a holding frame body attaching step is carried out for holding between the outer peripheral surface of the small diameter ring and the inner peripheral surface of the large diameter ring. Hereinafter, the sandwiching frame mounting process will be described with reference to FIG.
As shown in FIG. 8A, a sandwiching frame body 7 having a large-diameter ring 7a and a small-diameter ring 7b having a diameter larger than that of the semiconductor wafer 10 is used, and the small-diameter ring 7b is disposed on the surface 60a side of the dicing tape 60. The large-diameter ring 7a is positioned so as to surround the small-diameter ring 7b on the back surface 60b side of the dicing tape 60. Then, by fitting the large-diameter ring 7a and the small-diameter ring 7b, as shown in FIG. 8B and FIG. 9, the dicing tape 60 is connected to the outer peripheral surface of the small-diameter ring 7b and the inner peripheral surface of the large-diameter ring 7a. Hold between. As a result, a space 61 is formed on the inner side of the holding frame 7 by the inner peripheral surface of the small diameter ring 7 b and the surface of the dicing tape 60. The semiconductor wafer 10 is positioned in this space.
The protective tape 3 attached to the surface 10a of the semiconductor wafer 10 in the protective member attaching step is peeled off before or after the holding frame body attaching step after the dicing tape attaching step.

  If the holding frame body mounting step is performed, the closing tape mounting step of closing the space portion 61 with the closing tape from the inner surface of the small diameter ring 7b and the surface of the dicing tape 60 from the surface 60a side of the dicing tape 60. To implement. That is, as shown in FIG. 10, a closing tape 62 having substantially the same diameter as the outer diameter of the large-diameter ring 7 a covers the space 61 from the surface 60 a of the dicing tape 60, and the outer peripheral portion is sandwiched between the holding frame body 7 and the dicing tape 60. It sticks on the surface 60a of.

  Next, a laser beam having a wavelength that is not absorbed by the dicing tape but is absorbed by the dicing tape 60 from the back surface 60b side of the dicing tape 60 is irradiated along the divided grooves 103 formed in the semiconductor wafer 10, and the adhesive film 5 is irradiated. An adhesive film fusing process for fusing along the dividing grooves 103 is performed. This adhesive film fusing step is performed by a laser processing apparatus constructed according to the present invention shown in FIG. A laser processing apparatus 8 shown in FIG. 11 includes a chuck table 81 that holds a workpiece, a laser beam irradiation unit 82 that irradiates a workpiece held on the chuck table 81 with a laser beam, and a chuck table 81 that holds the workpiece. An image pickup means 83 for picking up an image of the processed workpiece is provided. The chuck table 81 is configured to suck and hold a workpiece, and can be moved in a machining feed direction indicated by an arrow X and an index feed direction indicated by an arrow Y in FIG. Yes.

  The laser beam irradiation means 82 irradiates a pulsed laser beam from a condenser 822 attached to the tip of a cylindrical casing 821 arranged substantially horizontally. In addition, the image pickup means 83 attached to the distal end portion of the casing 821 constituting the laser beam irradiation means 82 is applied to a workpiece in addition to a normal image pickup device (CCD) for picking up an image with visible light in the illustrated embodiment. Infrared illuminating means for irradiating infrared light, an optical system for capturing the infrared light irradiated by the infrared illuminating means, an image pickup device (infrared CCD) for outputting an electrical signal corresponding to the infrared light captured by the optical system, and the like The captured image signal is sent to the control means described later.

The adhesive film fusing process performed using the laser processing apparatus described above will be described with reference to FIGS.
In the adhesive film cutting step, first, as shown in FIG. 11, the space portion 61 is closed by the inner peripheral surface of the small-diameter ring 7 b and the surface of the dicing tape 60 from the surface 60 a side of the dicing tape 60 in the closing tape mounting step. The closing tape 62 side is placed on the chuck table 81 and sucked and held. Therefore, the dicing tape 60 with the adhesive film 5 attached to the back surface 10b of the semiconductor wafer 10 is on the upper side. In FIG. 11, the annular dicing frame 6 to which the dicing tape 60 is attached is omitted, but the dicing frame 6 is held by appropriate dicing frame holding means provided on the chuck table 81. .

  As described above, the chuck table 81 that sucks and holds the semiconductor wafer 10 is positioned directly below the imaging means 83 by a moving mechanism (not shown). When the chuck table 81 is positioned immediately below the image pickup means 83, an alignment operation for detecting a processing region to be laser processed of the adhesive film 5 adhered to the back surface 10b of the semiconductor wafer 10 by the image pickup means 83 and a control means (not shown) is performed. Execute. That is, the image pickup means 83 and the control means align the division grooves 103 formed in a predetermined direction of the semiconductor wafer 10 with the condenser 822 of the laser beam irradiation means 82 that irradiates laser beams along the division grooves 103. Image processing such as pattern matching is performed to perform the laser beam irradiation position alignment. Similarly, the alignment of the laser beam irradiation position is also performed on the divided grooves 103 formed in the direction perpendicular to the predetermined direction formed in the semiconductor wafer 10. At this time, if the adhesive film 5 and the dicing tape 60 attached to the back surface 10b of the semiconductor wafer 10 separated into individual semiconductor chips are non-transparent and the dividing grooves 103 cannot be confirmed, infrared illumination is used as the imaging means 83. By using a device and an optical system that captures infrared rays and an imaging device (infrared CCD) that outputs an electrical signal corresponding to the infrared rays, the dividing groove 103 can be imaged through the adhesive film 5 and the dicing tape 60. .

  When the alignment of the laser beam irradiation position is performed as described above, the chuck table 81 is moved to the laser beam irradiation region where the condenser 822 of the laser beam irradiation means 82 for irradiating the laser beam is located, as shown in FIG. One end (the left end in FIG. 12) of the predetermined dividing groove 103 is positioned directly below the condenser 822 of the laser beam irradiation means 82. The dicing tape 60 does not absorb the laser beam from the condenser 822, but the adhesive film 5 irradiates the laser beam having a wavelength that absorbs the laser beam while the chuck table 81, that is, the semiconductor wafer 10 is moved in the direction indicated by the arrow X1 in FIG. When the other end (right end in FIG. 12) of the dividing groove 103 reaches the irradiation position of the condenser 822, the irradiation of the pulse laser beam is stopped and the chuck table 81, that is, the semiconductor wafer 10 is moved. Stop. At this time, the pulsed laser beam emitted from the condenser 822 of the laser beam application means 82 is adjusted so that the condensing point P (the point where the condensing spot diameter is formed) is close to the upper surface of the adhesive film 5 in the illustrated embodiment. Is irradiated. The wavelength of the laser beam is set to 355 nm which is not absorbed by the polyolefin sheet constituting the dicing tape 60 but absorbed by the polyimide resin, epoxy resin and acrylic resin sheet constituting the adhesive film 5. However, it is appropriately set depending on the relationship between the material selected as the dicing tape and the material selected as the adhesive film. As a result, as shown in FIG. 13, the adhesive film 5 is melted and cut along the dividing grooves 103 by the energy of the laser beam that has passed through the dicing tape 60, thereby forming the fracture line 51.

  In the adhesive film cutting step described above, the adhesive film 5 is melted and debris 52 is generated when the adhesive film 5 is melted, but drops onto the closing tape 62 through the dividing grooves 103 formed in the semiconductor wafer 10. Therefore, adjacent semiconductor chips 100 are not joined by the debris 52.

In addition, the processing conditions in the said adhesive film fusing process are set as follows, for example.
Type of laser beam: Solid laser (YVO4 laser, YAG laser)
Wavelength: 355nm
Oscillation method: Pulse oscillation Pulse width: 10-100ns
Condensing spot diameter: φ5-20μm
Repetition frequency: 50-100 kHz
Average output: 1-10W
Processing feed rate: 50 to 400 mm / sec

  As described above, if a break line is formed in the adhesive film 5 along the divided grooves 103 in a predetermined direction, the chuck table 81 is indexed and fed by the interval of the divided grooves 103 in the direction indicated by the arrow Y (see FIG. 11). The adhesive film fusing process is performed again. If the machining feed and index feed are performed along all the divided grooves 103 formed in a predetermined direction, the chuck table 81 is rotated 90 degrees to be formed at a right angle to the predetermined direction. By performing the adhesive film fusing step and the index feed along the divided grooves 103, the adhesive film 5 is fused to the adhesive film 5 attached to each semiconductor chip 100 in which the semiconductor wafer 10 is separated by the divided grooves 103. The The plurality of separated semiconductor chips 100 are adhered to the dicing tape 60 even if the adhesive film 5 adhered to the back surface thereof is broken into the adhesive films 5 for each semiconductor chip 100 as described above. Therefore, the semiconductor chip 100 and the adhesive film 5 do not fall apart, and the form of the semiconductor wafer 10 is maintained.

  If the adhesive film fusing process described above is performed, the closing tape 62 is peeled off. By peeling off the closing tape 62, the debris 52 generated by melting the adhesive film 5 when the adhesive film 5 is melted and falling on the closing tape 62 in the adhesive film blowing step is also removed. Then, the large-diameter ring 7 a and the small-diameter ring 7 b of the holding frame body 7 are removed from the dicing tape 60.

  Next, a semiconductor chip detachment process for detaching the semiconductor chip 100 to which the adhesive film 5a is adhered from the dicing tape 60 is performed. This semiconductor chip removal step is performed by the pickup device 9 shown in FIGS. Here, the pickup device 9 will be described. The illustrated pickup device 9 includes a cylindrical base 91 having a mounting surface 911 on which the dicing frame 6 is mounted, and a dicing tape disposed concentrically within the base 91 and attached to the dicing frame 6. An expansion means 92 for expanding 60 is provided. The expansion means 92 includes a cylindrical expansion member 921 that supports a region 61 where a plurality of semiconductor chips 100 are present in the dicing tape 60. The expansion member 921 is moved vertically between the reference position shown in (a) of FIG. 15 and the extended position shown in (b) of FIG. It is configured to be movable in the axial direction. In the illustrated embodiment, an ultraviolet irradiation lamp 93 is disposed in the expansion member 921.

A semiconductor chip detachment process performed using the pickup device 8 described above will be described with reference to FIGS.
As described above, a plurality of semiconductor chips 100 supported on the upper surface of the expandable dicing tape 60 attached to the dicing frame 6 (the adhesive film 5a attached to the back surface is attached to the upper surface of the dicing tape 60). 14) and FIG. 15A, the dicing frame 6 is mounted on the mounting surface 911 of the cylindrical base 91 and is fixed to the base 91 by the clamp 94. Next, as shown in FIG. 15B, the expansion member 921 of the expansion means 92 that supports the region 61 where the plurality of semiconductor chips 100 are present in the dicing tape 60 is lifted by a lifting means (not shown). Is moved from the reference position to the extended position shown in FIG. As a result, the dicing tape 60 that can be expanded is expanded, so that the adhesive film 5a is attached to the dicing tape 60 and the adhesive film 5a that is attached to the semiconductor chip 100. Thus, the semiconductor chip 100 can be easily detached from the dicing tape 60, and a gap is formed between each semiconductor chip 100 and the adhesive film 5a attached to the semiconductor chip 100.

  Next, as shown in FIG. 14, the pick-up collet 90 disposed above the pick-up device 9 is operated to separate the individual semiconductor chips 100 from the upper surface of the dicing tape 60 and transport them to a tray (not shown). At this time, the ultraviolet irradiation lamp 93 provided in the expansion member 921 is turned on to irradiate the dicing tape 60 with ultraviolet rays, and the adhesive strength of the dicing tape 60 is reduced, so that it can be detached more easily. Thus, the semiconductor chip 100 detached from the dicing tape 60 is in a state where the adhesive film 5a is attached to the back surface as shown in FIG. 16, and the semiconductor chip 100 having the adhesive film 5a attached to the back surface is obtained. It is done.

The perspective view of the semiconductor wafer divided | segmented into a several semiconductor chip. FIG. 3 is an explanatory view of a dividing groove forming step for dividing the semiconductor chip shown in FIG. 1 into individual semiconductor chips by a prior dicing method. Explanatory drawing of the protection sheet sticking process in a tip dicing method. Explanatory drawing of the division | segmentation groove | channel exposure process in a tip dicing method. Explanatory drawing of the adhesive film sticking process which sticks an adhesive film on the back surface of the semiconductor wafer divided | segmented into each semiconductor chip by the prior dicing method. Explanatory drawing of the dicing tape sticking process which sticks the semiconductor wafer which stuck the adhesive film on the surface of the dicing tape with which the cyclic | annular dicing frame was mounted | worn. Explanatory drawing which shows other embodiment of the adhesive film sticking process of sticking an adhesive film on the back surface of the semiconductor wafer divided | segmented into each semiconductor chip by the previous dicing method. Explanatory drawing of the holding frame body attachment process in the fracture | rupture method of the adhesive film of this invention. The perspective view which shows the state by which the clamping frame body mounting process in the fracture | rupture method of the adhesive film of this invention is implemented, and the clamping frame is mounted | worn with a dicing tape. Explanatory drawing of the closure tape mounting | wearing process in the fracture | rupture method of the adhesive film of this invention. The schematic perspective view which shows the laser processing apparatus for implementing the adhesive film fusing process in the fracture | rupture method of the adhesive film of this invention. Explanatory drawing of the adhesive film fusing process in the fracture | rupture method of the adhesive film of this invention. The expanded sectional view which shows the state by which the adhesive film fusing process was implemented and the adhesive film was cut off. The perspective view of the pick-up apparatus for implementing the semiconductor chip removal process which detaches | leaves the semiconductor lip in which the adhesive film fusing process was implemented from a dicing tape. An explanatory view of a semiconductor chip separation process. The perspective view of the semiconductor chip removed from the dicing tape by performing a semiconductor chip removal process.

Explanation of symbols

2: Cutting device 21: Chuck table 22 of cutting device: Cutting blade 23: Cutting means 3: Protection member 4: Grinding device 41: Chuck table 42 of grinding device Grinding wheel:
43: Grinding means 5: Adhesive film 51: Break line 6: Dicing frame 60: Dicing tape 62: Closing tape 7: Holding frame 7a: Large diameter ring 7b: Small diameter ring 8: Laser processing device 81: Chuck of the laser processing device Table 82: Laser beam irradiation means 822: Condenser 83: Imaging means 9: Pickup device 90: Pickup collet 91: Cylindrical base 92: Expansion means 93: Expansion means 10: Semiconductor wafer 100: Semiconductor chip 101: Street 102: Device 103: Dividing groove

Claims (1)

An adhesive film for die bonding is attached to the back surface of the semiconductor wafer separated into a plurality of semiconductor chips, and the adhesive film side of the semiconductor wafer is attached to the surface of a dicing tape attached to an annular frame, A method for rupturing an adhesive film in which the adhesive film is melted and cut along divided grooves separated into the plurality of semiconductor chips,
Using a holding frame body composed of a large-diameter ring and a small-diameter ring larger in diameter than the semiconductor wafer, the small-diameter ring is positioned so as to surround the semiconductor wafer on the surface side of the dicing tape, and the large-diameter ring is positioned on the dicing tape. The dicing tape is placed between the outer peripheral surface of the small-diameter ring and the inner peripheral surface of the large-diameter ring by positioning the small-diameter ring on the back surface side and fitting the large-diameter ring with the small-diameter ring. A clamping frame mounting process for clamping;
A closing tape mounting step of mounting on the surface side of the dicing tape and closing the space formed by the sandwiching frame and the dicing tape with a closing tape;
Adhesive film fusing step of irradiating the adhesive film with a laser beam having a wavelength that is not absorbed by the dicing tape from the back side of the dicing tape but along the divided grooves, and fusing the adhesive film along the divided grooves Including,
An adhesive film breaking method characterized by the above.

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