CN112967999A - Preparation method for semiconductor chip film expansion - Google Patents
Preparation method for semiconductor chip film expansion Download PDFInfo
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- CN112967999A CN112967999A CN202110191989.9A CN202110191989A CN112967999A CN 112967999 A CN112967999 A CN 112967999A CN 202110191989 A CN202110191989 A CN 202110191989A CN 112967999 A CN112967999 A CN 112967999A
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- film
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- ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
Abstract
The invention discloses a preparation method for a semiconductor chip film expanding, which comprises the following steps: providing a first film expanding ring, a second film expanding ring and a wafer to be expanded; fixing a blue film on the first film expanding ring, and hollowing out a circular ring larger than the wafer to be expanded in the center area of the stretched blue film after the blue film is stretched; a second blue film for placing the wafer to be expanded is fixed on the second film expanding ring, the wafer to be expanded is cut, after chips are cut, redundant second blue films are cut off along the inner periphery of the second film expanding ring, and the second film expanding ring is removed; placing the chip with the second film expanding ring removed at the bottom, covering the first film expanding ring with the circular ring, enabling the center of the first film expanding ring to coincide with the center of the chip, and bonding the overlapped blue film and the second blue film to obtain a semi-finished product; and placing the semi-finished product on a film expanding machine for expanding the film to obtain the semiconductor chip with the expanded film. The preparation method for the semiconductor chip film expanding can expand the iron ring with small size to the crystal expanding ring with large size.
Description
Technical Field
The invention belongs to the technical field of semiconductor chip manufacturing, and particularly relates to a preparation method for a semiconductor chip film expanding.
Background
In general, semiconductor chips are manufactured by attaching a wafer to a blue film, laser cutting or dicing the wafer to divide the entire wafer into individual crystal grains, and then packaging the crystal grains to form functional IC chips.
Since the spacing between the dies is only the width of the scribe lines or score lines, it is not easy for a person to remove the dies from their carrier, and the wafer must be expanded and removed in advance. The former film expanding method is to mount a wafer on a film expanding machine, expand it, and expand the distance between crystal grains.
However, in the semiconductor chip manufacturing, the same size of the iron ring is generally placed in the same size of the film expander for film expansion, the large iron ring may be placed in the small size of the film expander for film expansion, and the small size of the iron ring may not be directly placed in the large size of the film expander for film expansion. The film expansion by the secondary die-reversing mode has the defects of die-reversing crystal falling, crystal grain scratching, serious uneven arrangement and the like, and the labor force is seriously wasted.
Disclosure of Invention
The invention mainly aims to provide a preparation method for a semiconductor chip film expanding so as to overcome the defects in the prior art.
In order to achieve the above object, the embodiment of the present invention adopts a technical solution comprising:
the embodiment of the invention provides a preparation method for a semiconductor chip film expanding, which comprises the following steps:
providing a first film expanding ring, a second film expanding ring and a wafer to be expanded, wherein the inner diameter of the first film expanding ring is recorded as d1And the inner diameter of the second expanding ring is recorded as d2The outer diameter of the wafer to be expanded is denoted as d3And d is3<d2<d1;
Fixing the first blue film onThe first blue film is stretched on the first film expanding ring, the center area of the stretched first blue film is hollowed out to make the first blue film be in a ring shape, and the outer diameter of the ring shape is marked as d4And d is3<d4<d2;
Fixing the second blue film carrying the wafer to be expanded on a second film expanding ring, and cutting the wafer to be expanded to form a plurality of chips distributed in an array;
cutting the second blue film along the inner periphery of the second film expanding ring, and removing the second film expanding ring to obtain a second blue film carrying the chip array;
covering a first film expanding ring carrying a circular first blue film on a second blue film carrying a chip array, enabling the center of the first film expanding ring to coincide with the center of the chip array, and bonding and fixing the first blue film and the second blue film at the overlapped part of the first blue film and the second blue film to obtain a semi-finished product;
and placing the semi-finished product on a film expanding machine matched with the first film expanding ring for expanding the film to obtain the wafer with the expanded film.
Further, fixing a second blue film carrying the wafer to be expanded on a second film expanding ring, and cutting the wafer to be expanded to form a plurality of chips distributed in an array, specifically comprising:
providing a wafer to be expanded, wherein the wafer to be expanded comprises a front surface and a back surface which are oppositely arranged;
providing a second blue film, wherein the second blue film is adhered to a second film expanding ring, and the edge of the second blue film is larger than the outer edge of the second film expanding ring;
sticking a film, namely sticking the back surface of the wafer to be expanded on the second blue film;
and cutting the wafer to be expanded, adhered with the second blue film, from the front side to the back side of the wafer to be expanded so as to cut the wafer to be expanded into a plurality of chips distributed in an array, wherein the chip array is adhered to the second blue film.
Further, a blade or laser is adopted to cut the wafer to be expanded.
Furthermore, a cutting channel is arranged on the front surface of the wafer to be expanded, and the blade or the laser cuts along the cutting channel.
Compared with the prior art, the invention has the following beneficial effects:
the preparation method for the semiconductor chip film expanding adopts cutting and transferring modes, can expand the small-size iron ring into the large-size crystal expanding ring, can avoid the problems of crystal falling, crystal grain scratching and the like, and reduces labor waste.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a process diagram of a manufacturing method for a semiconductor chip spread film according to an embodiment of the present disclosure.
Description of reference numerals: 1. 8 cun hoop, 2, first blue membrane, 3, ring, 4, second blue membrane, 5, wait to expand wafer, 6 cun hoop, 7, 8 cun expand brilliant ring, 8, the wafer of expanding.
Detailed Description
The present invention will be more fully understood from the following detailed description, which should be read in conjunction with the accompanying drawings. Detailed embodiments of the present invention are disclosed herein; however, it is to be understood that the disclosed embodiments are merely exemplary of the invention, which can be embodied in various forms. Therefore, specific functional details disclosed herein are not to be interpreted as limiting, but merely as a basis for the claims and as a representative basis for teaching one skilled in the art to variously employ the present invention in virtually any appropriately detailed embodiment.
In view of the deficiencies in the prior art, the inventors of the present invention have made extensive studies and extensive practices to provide technical solutions of the present invention. The invention mainly adopts cutting and transferring modes, can expand the iron ring with small size into the crystal expansion ring with large size, can avoid the problems of crystal falling, crystal grain scratching and the like, and reduces labor waste.
The technical solution, its implementation and principles, etc. will be further explained as follows.
One aspect of the embodiments of the present invention provides a method for preparing a film for a semiconductor chip, including:
providing a first film expanding ring, a second film expanding ring and a wafer to be expanded, wherein the inner diameter of the first film expanding ring is recorded as d1And the inner diameter of the second expanding ring is recorded as d2The outer diameter of the wafer to be expanded is denoted as d3And d is3<d2<d1;
Fixing the first blue film on the first film expanding ring, tightening the first blue film, hollowing out the center area of the tightened first blue film to make the first blue film in a ring shape, wherein the outer diameter of the ring shape is marked as d4And d is3<d4<d2;
Fixing the second blue film carrying the wafer to be expanded on a second film expanding ring, and cutting the wafer to be expanded to form a plurality of chips distributed in an array;
cutting the second blue film along the inner periphery of the second film expanding ring, and removing the second film expanding ring to obtain a second blue film carrying the chip array;
covering a first film expanding ring carrying a circular first blue film on a second blue film carrying a chip array, enabling the center of the first film expanding ring to coincide with the center of the chip array, and bonding and fixing the first blue film and the second blue film at the overlapped part of the first blue film and the second blue film to obtain a semi-finished product;
and placing the semi-finished product on a film expanding machine matched with the first film expanding ring for expanding the film to obtain the wafer with the expanded film.
In some preferred embodiments, the method for preparing a semiconductor chip spread film further comprises: and removing the first blue film leftover material tightened on the first film expanding ring.
In some preferred embodiments, the first and second expanding rings are iron rings, but are not limited thereto.
In some preferred embodiments, fixing the second blue film carrying the wafer to be expanded on the second film expanding ring, and cutting the wafer to be expanded to form a plurality of chips distributed in an array, specifically including:
providing a wafer to be expanded, wherein the wafer to be expanded comprises a front surface and a back surface which are oppositely arranged;
providing a second blue film, wherein the second blue film is adhered to a second film expanding ring, and the edge of the second blue film is larger than the outer edge of the second film expanding ring;
sticking a film, namely sticking the back surface of the wafer to be expanded on the second blue film;
and cutting the wafer to be expanded, adhered with the second blue film, from the front side to the back side of the wafer to be expanded so as to cut the wafer to be expanded into a plurality of chips distributed in an array, wherein the chip array is adhered to the second blue film.
In some preferred embodiments, a blade or a laser is used to cut the wafer to be expanded.
In some more preferred embodiments, the front surface of the wafer to be expanded is provided with a cutting channel, and the blade or the laser cuts along the cutting channel.
The technical scheme of the invention is further explained in detail by a plurality of embodiments and the accompanying drawings. However, the examples are chosen only for the purpose of illustrating the invention and are not to be construed as limiting the scope of the invention.
Fig. 1 shows a method for manufacturing a semiconductor chip film, which includes the following steps:
(1) providing 8-inch iron rings 1, 6-inch iron rings 6 and 4-inch wafers 5 to be expanded;
(2) fixing a first blue film 2 on an 8-inch iron ring 1, cutting off leftover materials after tightening, hollowing out the center area of the tightened first blue film 2 to enable the first blue film 2 to be in a ring shape 3, wherein the outer diameter of the ring shape 3 is larger than that of a wafer 5 to be expanded and smaller than that of a 6-inch iron ring 6;
(3) a second blue film 4 for placing the wafer 5 to be expanded is fixed on the 6-inch iron ring 6, the wafer 5 to be expanded is cut, and a plurality of chips distributed in an array are formed on the second blue film 4;
(4) cutting the second blue film 4 along the inner periphery of the 6-inch iron ring 6, and removing the 6-inch iron ring 6 to obtain the second blue film 4 carrying the chip array;
(5) covering the 8-inch iron ring 1 carrying the annular first blue film 2 on the second blue film 4 carrying the chip array, enabling the center of the 8-inch iron ring 1 to be overlapped with the center of the chip array, and bonding and fixing the first blue film 2 and the second blue film 4 at the overlapped part of the first blue film and the second blue film to obtain a semi-finished product;
(6) and placing the semi-finished product on a film expanding machine for expanding a film, and obtaining an expanded wafer 8 in an 8-inch wafer expanding ring 7 with the inner diameter consistent with that of the 8-inch iron ring 1.
In this embodiment, the specific operation step in step (3) includes:
providing a 4-inch wafer 5 to be expanded, wherein the wafer 5 to be expanded comprises a front surface and a back surface corresponding to the front surface;
providing a second blue film 4, wherein the second blue film 4 is adhered to the 6-inch iron ring 6, and the edge of the second blue film 4 is larger than the outer edge of the 6-inch iron ring 6;
sticking a film, namely sticking the back surface of the wafer 5 to be expanded on the second blue film 4;
and cutting, namely cutting the wafer 5 to be expanded adhered with the second blue film 4 from the front side to the back side of the wafer, wherein a cutting channel is arranged on the front side of the wafer 5 to be expanded, and a blade or laser cuts along the cutting channel so as to cut the wafer 5 to be expanded into a plurality of chips which are adhered to the second blue film 4 respectively.
In the implementation process, the sequence of the step (2) and the step (3) can be adjusted, and the final result is not influenced.
The aspects, embodiments, features and examples of the present invention should be considered as illustrative in all respects and not intended to be limiting of the invention, the scope of which is defined only by the claims. Other embodiments, modifications, and uses will be apparent to those skilled in the art without departing from the spirit and scope of the claimed invention.
The use of headings and chapters in this disclosure is not meant to limit the disclosure; each section may apply to any aspect, embodiment, or feature of the disclosure.
Throughout this specification, where a composition is described as having, containing, or comprising specific components or where a process is described as having, containing, or comprising specific process steps, it is contemplated that the composition of the present teachings also consist essentially of, or consist of, the recited components, and the process of the present teachings also consist essentially of, or consist of, the recited process steps.
Unless specifically stated otherwise, use of the terms "comprising", "including", "having" or "having" is generally to be understood as open-ended and not limiting.
It should be understood that the order of steps or the order in which particular actions are performed is not critical, so long as the teachings of the invention remain operable. Further, two or more steps or actions may be performed simultaneously.
In addition, the inventors of the present invention have also made experiments with other materials, process operations, and process conditions described in the present specification with reference to the above examples, and have obtained preferable results.
While the invention has been described with reference to illustrative embodiments, it will be understood by those skilled in the art that various other changes, omissions and/or additions may be made and substantial equivalents may be substituted for elements thereof without departing from the spirit and scope of the invention. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the invention without departing from its scope. Therefore, it is intended that the invention not be limited to the particular embodiment disclosed for carrying out this invention, but that the invention will include all embodiments falling within the scope of the appended claims. Moreover, unless specifically stated any use of the terms first, second, etc. do not denote any order or importance, but rather the terms first, second, etc. are used to distinguish one element from another.
Claims (6)
1. A preparation method for a semiconductor chip film expanding is characterized by comprising the following steps:
providing a first film expanding ring, a second film expanding ring and a wafer to be expanded, wherein the inner diameter of the first film expanding ring is recorded as d1And the inner diameter of the second expanding ring is recorded as d2To stand forThe outer diameter of the expanded wafer is marked as d3And d is3<d2<d1;
Fixing the first blue film on the first film expanding ring, tightening the first blue film, hollowing out the center area of the tightened first blue film to make the first blue film in a ring shape, wherein the outer diameter of the ring shape is marked as d4And d is3<d4<d2;
Fixing the second blue film carrying the wafer to be expanded on a second film expanding ring, and cutting the wafer to be expanded to form a plurality of chips distributed in an array;
cutting the second blue film along the inner periphery of the second film expanding ring, and removing the second film expanding ring to obtain a second blue film carrying the chip array;
covering a first film expanding ring carrying a circular first blue film on a second blue film carrying a chip array, enabling the center of the first film expanding ring to coincide with the center of the chip array, and bonding and fixing the first blue film and the second blue film at the overlapped part of the first blue film and the second blue film to obtain a semi-finished product;
and placing the semi-finished product on a film expanding machine matched with the first film expanding ring for expanding the film to obtain the wafer with the expanded film.
2. The method for preparing a semiconductor chip film expander according to claim 1, further comprising: and removing the first blue film leftover material tightened on the first film expanding ring.
3. The production method for a semiconductor chip spread film according to claim 1 or 2, characterized in that: the first film expanding ring and the second film expanding ring are iron rings.
4. The method for preparing the semiconductor chip film expanding film according to claim 1, comprising:
providing a wafer to be expanded, wherein the wafer to be expanded comprises a front surface and a back surface which are oppositely arranged;
providing a second blue film, wherein the second blue film is adhered to a second film expanding ring, and the edge of the second blue film is larger than the outer edge of the second film expanding ring;
sticking a film, namely sticking the back surface of the wafer to be expanded on the second blue film;
and cutting the wafer to be expanded, adhered with the second blue film, from the front side to the back side of the wafer to be expanded so as to cut the wafer to be expanded into a plurality of chips distributed in an array, wherein the chip array is adhered to the second blue film.
5. The method for producing a semiconductor chip spread film according to claim 1 or 4, characterized in that: and cutting the wafer to be expanded by adopting a blade or laser.
6. The manufacturing method for a semiconductor chip film expanding according to claim 5, characterized in that: and a cutting channel is arranged on the front surface of the wafer to be expanded, and the blade or the laser cuts along the cutting channel.
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CN202022158380 | 2020-09-27 | ||
CN2020221583805 | 2020-09-27 |
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CN112967999A true CN112967999A (en) | 2021-06-15 |
CN112967999B CN112967999B (en) | 2022-09-20 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN113488394A (en) * | 2021-07-08 | 2021-10-08 | 湖北三维半导体集成制造创新中心有限责任公司 | Wafer bonding method and system |
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