JP2006287205A5 - - Google Patents
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- Publication number
- JP2006287205A5 JP2006287205A5 JP2006045792A JP2006045792A JP2006287205A5 JP 2006287205 A5 JP2006287205 A5 JP 2006287205A5 JP 2006045792 A JP2006045792 A JP 2006045792A JP 2006045792 A JP2006045792 A JP 2006045792A JP 2006287205 A5 JP2006287205 A5 JP 2006287205A5
- Authority
- JP
- Japan
- Prior art keywords
- impurity
- forming
- gate
- gate electrode
- impurity region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000012535 impurity Substances 0.000 claims 56
- 239000004065 semiconductor Substances 0.000 claims 13
- 230000015572 biosynthetic process Effects 0.000 claims 9
- 238000005755 formation reaction Methods 0.000 claims 9
- 238000005530 etching Methods 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 5
- 239000002184 metal Substances 0.000 claims 4
- 229910021332 silicide Inorganic materials 0.000 claims 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 238000010438 heat treatment Methods 0.000 claims 2
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006045792A JP5121145B2 (ja) | 2005-03-07 | 2006-02-22 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005062929 | 2005-03-07 | ||
JP2005062929 | 2005-03-07 | ||
JP2006045792A JP5121145B2 (ja) | 2005-03-07 | 2006-02-22 | 半導体装置の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006287205A JP2006287205A (ja) | 2006-10-19 |
JP2006287205A5 true JP2006287205A5 (fr) | 2009-02-05 |
JP5121145B2 JP5121145B2 (ja) | 2013-01-16 |
Family
ID=37408711
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006045792A Expired - Fee Related JP5121145B2 (ja) | 2005-03-07 | 2006-02-22 | 半導体装置の作製方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5121145B2 (fr) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4845592B2 (ja) * | 2005-05-30 | 2011-12-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US8153511B2 (en) | 2005-05-30 | 2012-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP2008112909A (ja) * | 2006-10-31 | 2008-05-15 | Kochi Prefecture Sangyo Shinko Center | 薄膜半導体装置及びその製造方法 |
JP2008124214A (ja) * | 2006-11-10 | 2008-05-29 | Kochi Prefecture Sangyo Shinko Center | 薄膜半導体装置及びその製造方法 |
JP5352081B2 (ja) * | 2006-12-20 | 2013-11-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP5512931B2 (ja) * | 2007-03-26 | 2014-06-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP5222487B2 (ja) * | 2007-04-17 | 2013-06-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP5369501B2 (ja) * | 2008-06-04 | 2013-12-18 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
CN103529645A (zh) * | 2013-10-25 | 2014-01-22 | 无锡英普林纳米科技有限公司 | 一种纳米印章的制备方法 |
TWI665778B (zh) * | 2014-02-05 | 2019-07-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置、模組及電子裝置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10135475A (ja) * | 1996-10-31 | 1998-05-22 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
TW513753B (en) * | 2000-03-27 | 2002-12-11 | Semiconductor Energy Lab | Semiconductor display device and manufacturing method thereof |
TW544941B (en) * | 2002-07-08 | 2003-08-01 | Toppoly Optoelectronics Corp | Manufacturing process and structure of thin film transistor |
JP4230307B2 (ja) * | 2003-08-04 | 2009-02-25 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
-
2006
- 2006-02-22 JP JP2006045792A patent/JP5121145B2/ja not_active Expired - Fee Related
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