JP2006278607A - Surface-mounting resin-made hollow package and semiconductor device using the same - Google Patents

Surface-mounting resin-made hollow package and semiconductor device using the same Download PDF

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JP2006278607A
JP2006278607A JP2005093644A JP2005093644A JP2006278607A JP 2006278607 A JP2006278607 A JP 2006278607A JP 2005093644 A JP2005093644 A JP 2005093644A JP 2005093644 A JP2005093644 A JP 2005093644A JP 2006278607 A JP2006278607 A JP 2006278607A
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package
hollow
resin
lead
metal plate
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JP3734225B1 (en
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Yukihiko Hoashi
之彦 帆足
Mitsuo Yatabe
光雄 矢田部
Takashi Ogata
貴司 緒方
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Yoshikawa Kogyo Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a resin-made hollow package which efficiently radiates heat generated from a semiconductor element to the outside and is superior in bonding stability at packaging. <P>SOLUTION: The resin-made hollow package is composed of a hollow 20 having a bottom surface 4 for mounting a semiconductor element, leads 1, 2 for establishing electric conduction between the semiconductor element 7 mounted in the hollow 20 and a substrate 17, and a resin molding forming the package body 3. Its bottom surface comprises a package lower surface 5 located nearer to the hollow 20 than the bottom surface 6 of the package body. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は半導体素子を装着するための樹脂製中空パッケージ及びこれを用いた半導体装置に関する。さらに詳しくは、基板に対して接合信頼性が高く、放熱性に優れた、多様な中空パッケージのリード構造にも適用可能な半導体素子向け樹脂製中空パッケージ構造に関する。   The present invention relates to a resin hollow package for mounting a semiconductor element and a semiconductor device using the same. More specifically, the present invention relates to a resin-made hollow package structure for a semiconductor element that can be applied to a variety of hollow package lead structures having high bonding reliability to a substrate and excellent heat dissipation.

近年、固体撮像素子などの半導体素子を搭載する中空構造の半導体パッケージ(以下「中空パッケージ」という。)では、低コスト化を目的としてパッケージベース(パッケージ本体)に樹脂を採用したものが知られている。またパッケージ構造としては、DIP(Dual Inline Package)が主流であるが、近年表面実装タイプのSOP(Small Outline Package)・QFP(Quad Flat Package)が採用されるようになり、さらにはSON(Small Outline Non Leaded Package)・QFN(Quad Flat Non Leaded Package)といったリードレス化されたパッケージ構造も検討され始めている。これは中空パッケージに小型化、薄型化が要求されてきているためであり、中空パッケージの面実装技術も検討が進んでいる。   In recent years, a semiconductor package having a hollow structure (hereinafter referred to as “hollow package”) on which a semiconductor element such as a solid-state imaging element is mounted has been known to employ a resin as a package base (package body) for the purpose of cost reduction. Yes. As a package structure, DIP (Dual Inline Package) is the mainstream, but in recent years, surface mount type SOP (Small Outline Package) and QFP (Quad Flat Package) have been adopted, and further SON (Small Outline). The leadless package structure such as Non Leaded Package (QFN) and QFN (Quad Flat Non Leaded Package) is also being studied. This is because the hollow package is required to be reduced in size and thickness, and the surface mount technology of the hollow package is also being studied.

一方で、固体撮像素子などの半導体素子は高密度化が進んでおり、それに伴って、中空パッケージに組み込んで作動させた場合に発生する熱が増加している。発生する熱が増加すると半導体素子そのものの機能を低下させる虞があり、中空パッケージから放熱できる構造が強く望まれている。しかしながら、低コスト化を目的とした樹脂製中空パッケージではパッケージベースである樹脂の熱伝導性が、セラミックス製中空パッケージと比較して低く、放熱性が低い点が課題とされている。   On the other hand, the density of semiconductor elements such as solid-state imaging elements has been increasing, and accordingly, the heat generated when operating in a hollow package is increasing. If the generated heat increases, the function of the semiconductor element itself may be lowered, and a structure that can dissipate heat from the hollow package is strongly desired. However, in the resin hollow package for the purpose of reducing the cost, the thermal conductivity of the resin as the package base is lower than that of the ceramic hollow package, and the heat dissipation is low.

この樹脂製中空パッケージの放熱効果を高めるために、金属板等の熱伝導率の高い材料を中空部の底面、中空パッケージの底面またはそれより内部に埋設することで中空部から中空パッケージの底面までの熱伝導性を高め、半導体素子より発生する熱を効果的に放熱する構造が従来より提案されてきた(特許文献1、2参照)。
特許第2968988号公報 特許第3080236号公報
In order to enhance the heat dissipation effect of this resin hollow package, a material with high thermal conductivity such as a metal plate is embedded in the bottom surface of the hollow portion, the bottom surface of the hollow package, or from the inside to the bottom surface of the hollow package. Conventionally, a structure for improving the thermal conductivity of the semiconductor element and effectively dissipating the heat generated from the semiconductor element has been proposed (see Patent Documents 1 and 2).
Japanese Patent No. 2996888 Japanese Patent No. 3080236

金属板等の熱伝導率の高い材料を中空部の底面、中空パッケージの底面またはそれより内部に埋設させた樹脂製中空パッケージでは、半導体素子より発生する熱を中空パッケージの底面に効率よく伝えることは可能であるが、中空パッケージの底面から放熱するには、中空パッケージ底面近傍で空気の対流を発生させ熱を逃がす必要がある。つまり、中空パッケージ底面近傍に空気層がないと効果的な放熱は望めない。しかし、従来、基板実装後の中空パッケージにおいては、その底面と基板間に隙間は殆どなく、空気層は皆無であるため、高い放熱効果は望めない。   In resin hollow packages in which a material with high thermal conductivity such as a metal plate is embedded in the bottom of the hollow part, the bottom of the hollow package, or in the interior, the heat generated from the semiconductor element is efficiently transferred to the bottom of the hollow package. However, in order to dissipate heat from the bottom surface of the hollow package, it is necessary to generate air convection near the bottom surface of the hollow package to release the heat. That is, effective heat dissipation cannot be expected unless there is an air layer near the bottom of the hollow package. However, conventionally, in a hollow package after mounting on a substrate, there is almost no gap between the bottom surface and the substrate, and since there is no air layer, a high heat dissipation effect cannot be expected.

また、実装時には中空パッケージの底面を基準面として半田などの実装ペーストを熱により溶融させリードを基板に接合させるが、金属板を中空パッケージの底面、もしくは底面近傍に設置した場合、熱による膨張で中空パッケージの底面が膨らみ、実装高さの位置決め精度を低下させる虞がある。さらには基板実装時の熱に伴う金属板の膨張により、基板を突き上げ、半田などの実装ペーストに剥離・亀裂等の不具合を発生させ、実装強度の低下あるいは接合不良を発生させてしまう虞がある。   Also, during mounting, the mounting paste such as solder is melted by heat with the bottom surface of the hollow package as the reference surface, and the lead is joined to the substrate. However, if a metal plate is installed on or near the bottom surface of the hollow package, The bottom surface of the hollow package may swell, and the positioning accuracy of the mounting height may be reduced. Furthermore, due to the expansion of the metal plate accompanying the heat at the time of mounting the board, the board may be pushed up, causing problems such as peeling and cracking in the mounting paste such as solder, which may cause a decrease in mounting strength or poor bonding. .

そこで、本発明の目的は、半導体素子から発生する熱を効果的に外部に放熱させることができ、かつ実装時の接合安定性に優れた樹脂製中空パッケージを提供することにある。   Accordingly, an object of the present invention is to provide a resin-made hollow package that can effectively dissipate heat generated from a semiconductor element to the outside and has excellent bonding stability during mounting.

本発明の樹脂製中空パッケージは、半導体素子を装着するための底面を有する中空部と、この中空部に装着される半導体素子と外部との電気的導通を実現するリードと、パッケージ本体を構成する樹脂成形体とからなる樹脂製中空パッケージにおいて、その底面部分にパッケージ本体の底面よりも中空部側に位置するパッケージ下面部が設けらていることを特徴とする。   The resin-made hollow package of the present invention constitutes a package body with a hollow portion having a bottom surface for mounting a semiconductor element, leads for realizing electrical continuity between the semiconductor element mounted in the hollow portion and the outside. A resin hollow package made of a resin molded body is characterized in that a bottom surface portion of the package is provided on the bottom surface portion of the package body located on the hollow portion side of the bottom surface of the package body.

この構成によれば、パッケージ下面部がパッケージ本体の底面より中空部側に位置するため、実装後でも基板とパッケージ下面部との間に隙間が発生し、空気層が確保される。つまり、半導体素子から発生した熱がパッケージ下面部に伝達されると空気層に対流が起り、より効果的に放熱することが可能となる。   According to this configuration, since the lower surface portion of the package is positioned on the hollow portion side from the bottom surface of the package body, a gap is generated between the substrate and the lower surface portion of the package even after mounting, and an air layer is secured. That is, when heat generated from the semiconductor element is transmitted to the lower surface portion of the package, convection occurs in the air layer, and heat can be radiated more effectively.

パッケージ本体の底面より中空部側に位置するパッケージ下面部は、少なくとも半導体素子の底面と同じ大きさを有していることが好ましい。このパッケージ下面部が広いほど空気層が増え、対流効果が高まり放熱性が向上する。また、パッケージ下面部を中空部側により大きく凹ませて位置させれば、空気層が増加することに加え、中空部の底面部分の樹脂部の厚みが薄くなることでパッケージ下面部までの熱伝達速度が高まり、一層の放熱効果が得られる。パッケージ下面部の凹形状は、同形状を成形金型に凸構造として準備し成形することで容易に得られる。   It is preferable that the package lower surface portion located on the hollow portion side from the bottom surface of the package body has at least the same size as the bottom surface of the semiconductor element. The wider the lower surface of the package, the more the air layer increases, and the convection effect increases and the heat dissipation improves. In addition, if the lower surface of the package is positioned so as to be recessed more greatly on the hollow portion side, in addition to an increase in the air layer, the thickness of the resin portion on the bottom surface of the hollow portion is reduced, so that heat is transferred to the lower surface of the package. The speed increases and a further heat dissipation effect is obtained. The concave shape of the lower surface portion of the package can be easily obtained by preparing and molding the same shape as a convex structure in a molding die.

基板とパッケージ下面部との間の空気層により強い対流を起こして効果的な放熱を可能とするには、基板とパッケージ下面部との間の隙間における空気層を交換するために、この隙間と外部とを連通する気流通路を形成することが好ましい。具体的には、パッケージ下面部を囲繞する形成樹脂層(パッケージ本体の底面部)に切り欠きや透孔を複数個形成したり、パッケージ本体の2周辺部にリードを配置したものでは他の周辺部に切り欠きや開口部を形成したり、4周辺部にリードを配置したものではパッケージ下面部下の基板面に透孔を複数個形成したり、パッケージ下面部の面積より小面積の開口部を基板に設けることで、気流通路を形成することができる。この気流通路を介して、中空部に蓋材で気密封止された半導体装置とその周辺域との温度差により、基板とパッケージ下面部との間の隙間の空気層により強い対流を生じさせることができる。   In order to cause strong convection in the air layer between the substrate and the lower surface portion of the package and to enable effective heat dissipation, this air gap in the gap between the substrate and the lower surface portion of the package is exchanged. It is preferable to form an air flow passage communicating with the outside. Specifically, in the case where a plurality of notches and through-holes are formed in the forming resin layer (the bottom surface portion of the package main body) surrounding the lower surface portion of the package, or leads are arranged on two peripheral portions of the package main body, In the case where notches and openings are formed in the part, leads are arranged in the four peripheral parts, a plurality of through holes are formed in the substrate surface under the package lower surface part, or an opening having a smaller area than the area of the package lower surface part is formed. By providing it on the substrate, an air flow passage can be formed. Through this airflow path, a strong convection is generated in the air layer in the gap between the substrate and the package lower surface due to the temperature difference between the semiconductor device hermetically sealed in the hollow portion with the lid material and the surrounding area. Can do.

さらに高い放熱性を必要とする場合、少なくとも半導体素子の底面と同じ大きさを有する金属体からなるアイランド部を中空部の底面、パッケージ下面部またはその内部に設置すればよい。アイランド部が広いほど、放熱効果は高まる。アイランド部はパッケージ下面部への熱伝導を高める効果があり、設置する位置は中空部の底面、パッケージ下面部あるいはその内部の樹脂層内のいずれでもよい。アイランド部は吊りリードを介してリードフレームに連結させて、成形後の目的とする位置に予め押し下げた(ディプレスした)ものを使用して、樹脂成形することにより容易に得られる。   When higher heat dissipation is required, an island portion made of a metal body having at least the same size as the bottom surface of the semiconductor element may be provided on the bottom surface of the hollow portion, the lower surface portion of the package, or the inside thereof. The wider the island, the greater the heat dissipation effect. The island portion has an effect of increasing heat conduction to the lower surface portion of the package, and the installation position may be any of the bottom surface of the hollow portion, the lower surface portion of the package, or the resin layer inside thereof. The island part is easily obtained by resin molding using a part that is connected to a lead frame via a suspension lead and pressed down (depressed) in advance to a target position after molding.

アイランド部を設置することで、効果的に半導体素子から発生する熱はパッケージ下面部へ伝達され、その熱は空気層の対流により放熱される。パッケージ下面部にアイランド部を設置したとしても、パッケージ本体の底面よりも中空部側で露出する形状となり、基板実装時の熱に伴う金属板の膨張が発生しても、基板を突き上げることが無いため、半田などの実装ペーストに剥離・亀裂を発生させる虞はない。これらによって実装時の接合安定性が確保された、放熱性の高い樹脂製中空パッケージを得ることができる。   By installing the island portion, the heat generated from the semiconductor element is effectively transmitted to the lower surface portion of the package, and the heat is dissipated by the convection of the air layer. Even if an island is installed on the bottom of the package, the shape is exposed on the hollow side of the bottom of the package body, and even if the metal plate expands due to heat during board mounting, the board will not be pushed up. Therefore, there is no possibility of causing peeling or cracking in the mounting paste such as solder. Accordingly, it is possible to obtain a resin-made hollow package with high heat dissipation, in which bonding stability during mounting is ensured.

さらに本発明では、中空部の底面と同じかもしくはそれよりも広い金属板を、インナーリード下面に絶縁層を介して固着することもできる。金属板の厚みは厚い方が好ましく、中空部の底面及びパッケージ下面部のいずれにも金属板が露出する厚みを選択することがより好ましい。中空部の底面からパッケージ下面部までの間を熱伝導率の高い金属板が占有し、かつ空気層に接する部位(パッケージ下面部)を金属板とすることで、高い放熱性が得られる。この場合、金型での成形時には、上型によりインナーリード上面を、下型により金属板下面を、強固にクランプできることから、露出される金属板下面、及びインナーリード上面に発生しやすい樹脂バリを極めて少なくすることができ、後の樹脂バリ除去工程への負担が大幅に軽減できる。   Furthermore, in the present invention, a metal plate that is the same as or wider than the bottom surface of the hollow portion can be fixed to the lower surface of the inner lead via an insulating layer. The thickness of the metal plate is preferably thicker, and it is more preferable to select a thickness at which the metal plate is exposed to both the bottom surface of the hollow portion and the lower surface portion of the package. A metal plate having a high thermal conductivity occupies between the bottom surface of the hollow portion and the lower surface portion of the package, and a portion (the lower surface portion of the package) in contact with the air layer is used as the metal plate, whereby high heat dissipation can be obtained. In this case, since the upper die can be firmly clamped by the upper die and the lower surface of the metal plate can be firmly clamped by the lower die, the resin burrs that are likely to be generated on the exposed lower surface of the metal plate and the upper surface of the inner lead can be formed. It can be extremely reduced, and the burden on the subsequent resin burr removal process can be greatly reduced.

インナーリード下面に絶縁層を介して金属板を固着させる構造にすると、露出するインナーリード上面と中空部の底面となる金属板の上面には、リードの厚みと絶縁層の厚み分の高低差が生じる。この高低差は半導体素子の厚みに近い高さに設定することで、半導体素子とインナーリード上面の高低差を小さくすることが可能であり、安定した電気的接合が可能となる。好ましくは半導体素子の厚みとリード及び絶縁層を加えた厚みとを同一とすれば、より安定するとともに、電気的接合の距離を短くすることが可能となり、低コスト化の中空パッケージが提供できる。また、この構造により振動などによる衝撃でショートする危険性が大幅に軽減できる。   When the metal plate is fixed to the lower surface of the inner lead via an insulating layer, there is a difference in height between the thickness of the lead and the thickness of the insulating layer between the exposed upper surface of the inner lead and the upper surface of the metal plate serving as the bottom surface of the hollow portion. Arise. By setting the height difference to a height close to the thickness of the semiconductor element, it is possible to reduce the height difference between the semiconductor element and the upper surface of the inner lead, and a stable electrical connection is possible. Preferably, if the thickness of the semiconductor element and the thickness including the lead and the insulating layer are made the same, it is possible to provide a more stable and short distance for electrical joining, and to provide a low-cost hollow package. In addition, this structure can greatly reduce the risk of a short circuit due to an impact caused by vibration or the like.

金属板は銅、鉄、ステンレス、アルミニウム及びこれらの金属を含む合金からなる群から選ばれたもの、好ましくは銅合金が良い。必要に応じて全面ないし部分的に表面処理を施すことができる。例えば、金、銀、ニッケル、半田などのメッキを施しても良い。また金属板の上面または下面、あるいは上下面に、丸、四角などの形状をした凹凸部を形成することで、樹脂との密着性が高まり、かつ比表面積が増加することに伴い一段と放熱性を高めることが可能となる。また、金属板の側端部に段差部を形成することにより、金属板の比表面積が大きくなり放熱効果が高まり、かつ金属板と樹脂との密着性が高まる効果が得られる。   The metal plate is selected from the group consisting of copper, iron, stainless steel, aluminum and alloys containing these metals, preferably a copper alloy. Surface treatment can be applied to the entire surface or a part as required. For example, gold, silver, nickel, solder, or the like may be plated. In addition, by forming concave and convex portions in the shape of circles, squares, etc. on the upper or lower surface, or upper and lower surfaces of the metal plate, the adhesion with the resin is increased and the heat dissipation is further increased as the specific surface area increases. It becomes possible to raise. Further, by forming the stepped portion at the side end portion of the metal plate, an effect of increasing the specific surface area of the metal plate and enhancing the heat dissipation effect and enhancing the adhesion between the metal plate and the resin can be obtained.

半導体実装面、つまり金属板の上面は露出した方が高い放熱効果が得られるが、半導体素子と樹脂製中空パッケージ間に絶縁を必要とする製品もあり、金属板上面に樹脂層を設けることも可能である。この際、半導体素子とインナーリードの接合部におけるショートの危険性を回避するためにも、前記樹脂層の上面とインナーリード上面とは同一面上ではなく、高低差を設けることが好ましい。   Exposing the semiconductor mounting surface, that is, the upper surface of the metal plate, provides a higher heat dissipation effect, but there are products that require insulation between the semiconductor element and the resin hollow package, and a resin layer may be provided on the upper surface of the metal plate. Is possible. At this time, in order to avoid the risk of a short circuit at the joint between the semiconductor element and the inner lead, it is preferable that the upper surface of the resin layer and the upper surface of the inner lead are not on the same plane but have a height difference.

本発明は、薄型化中空パッケージにも適用できる。つまり、SON、QFNといったノンリード型の面実装タイプの高放熱性樹脂製中空パッケージにも適用できる。   The present invention can also be applied to a thin hollow package. That is, the present invention can also be applied to a non-lead type surface mount type high heat radiation resin hollow package such as SON and QFN.

第1に、リード下面部の一部をエッチングすることで基板実装面となるアウターリードの下面を残すように形成したリードフレームを用い、アウターリードの下面がパッケージ本体の底面の周縁近傍で露出されているタイプの中空パッケージに適用できる。   First, by using a lead frame formed so as to leave the lower surface of the outer lead that becomes the substrate mounting surface by etching a part of the lower surface of the lead, the lower surface of the outer lead is exposed near the periphery of the bottom surface of the package body. It can be applied to the type of hollow package.

第2に、リードを屈曲し、このリードのアウターリードの下面がパッケージ本体の底面の周縁近傍で露出されているタイプの中空パッケージに適用できる。   Secondly, the present invention can be applied to a hollow package of a type in which a lead is bent and the lower surface of the outer lead of the lead is exposed near the periphery of the bottom surface of the package body.

前記2種類の面実装タイプ中空パッケージでは、パッケージ本体の底面の周縁近傍に基板への実装端子となるアウターリードが露出しており、中空パッケージの薄型化が図れるとともに、中空部下のパッケージ下面部に空気層を確保でき、対流による放熱性も得られる。   In the two types of surface mount type hollow packages, the outer leads serving as mounting terminals to the substrate are exposed in the vicinity of the peripheral edge of the bottom surface of the package body, so that the hollow package can be thinned and the lower surface of the package below the hollow portion can be formed. An air layer can be secured and heat dissipation by convection can be obtained.

また、前記2種類のノンリード型の面実装タイプの中空パッケージにおいても、その中空部の底面、パッケージ下面部またはその内部に少なくとも半導体素子の底面と同じ大きさを有する金属板からなるアイランド部を設置することができる。あるいは、中空部の底面と同じかもしくはそれよりも広い金属板をインナーリード下面に絶縁層を介して固着することができる。これらによって、さらに高い放熱効果が得られる。アイランド部もしくは金属板の下面をパッケージ下面部に露出させる構造とすることにより、空気層での対流が活発となり、本発明の放熱効果をより高めることが可能である。   Also, in the two types of non-lead type surface mount type hollow packages, an island portion made of a metal plate having at least the same size as the bottom surface of the semiconductor element is installed in the bottom surface of the hollow portion, the lower surface portion of the package, or the inside thereof. can do. Alternatively, a metal plate that is the same as or wider than the bottom surface of the hollow portion can be fixed to the lower surface of the inner lead via an insulating layer. As a result, a higher heat dissipation effect can be obtained. By adopting a structure in which the island portion or the lower surface of the metal plate is exposed to the lower surface portion of the package, convection in the air layer becomes active, and the heat dissipation effect of the present invention can be further enhanced.

金属板の下面をパッケージ下面部に露出させる構造では、先に述べたとおり、金型での成形時には、成形金型の上型でインナーリード上面を、下型で金属板下面を、強固にクランプできることから、露出される金属板の下面、及びインナーリード上面に発生しやすい樹脂バリを極めて少なくすることができ、後の樹脂バリ除去工程への負担が大幅に軽減できる。金属板の下面をパッケージ下面部に露出させるのに加えて、金属板の上面を半導体素子の実装面となる中空部の底面にも露出させることで、放熱効果はさらに高まり、加えて樹脂バリ低減にさらに高い効果も得られる。   In the structure where the lower surface of the metal plate is exposed on the lower surface of the package, as described above, when forming with the mold, the upper surface of the inner lead is firmly clamped with the upper mold of the mold and the lower surface of the metal plate is firmly clamped with the lower mold. Therefore, resin burrs that are likely to occur on the exposed lower surface of the metal plate and the upper surface of the inner lead can be extremely reduced, and the burden on the subsequent resin burrs removal step can be greatly reduced. In addition to exposing the lower surface of the metal plate to the lower surface of the package, the heat dissipation effect is further enhanced by exposing the upper surface of the metal plate to the bottom surface of the hollow portion that is the mounting surface of the semiconductor element, and in addition, resin burrs are reduced. Even higher effects can be obtained.

また、パッケージ下面部として露出している金属板の周縁にあるパッケージ本体の底面部で高さ位置決めを行うことにより、基板実装時の熱で金属板が膨張してもパッケージ本体の底面部よりも膨らむことは無いことから、精度の高い実装ができるとともに、パッケージ本体の底面部が基板を突き上げ、半田などの実装ペーストに剥離・亀裂等の不具合を発生させ、実装強度の低下あるいは接合不良を発生させてしまうことは無い。   Also, by positioning the height at the bottom surface of the package body at the periphery of the metal plate exposed as the bottom surface of the package, even if the metal plate expands due to heat during board mounting, Since it does not swell, it can be mounted with high precision, and the bottom of the package body pushes up the board, causing problems such as peeling and cracking in mounting paste such as solder, resulting in reduced mounting strength or poor bonding I won't let you.

SON、QFNといったノンリード型の面実装タイプ樹脂製中空パッケージでは、パッケージ本体の底面に露出したアウターリード下面の屈曲端面部に段差部を形成することにより、露出するアウターリード下面への樹脂バリが低減され、露出部の寸法精度が向上する。この段差部は、ハーフプレス、またはハーフエッチング方式で形成することが可能である。   In non-lead type surface mount resin hollow packages such as SON and QFN, by forming a step on the bent end surface of the lower surface of the outer lead exposed on the bottom surface of the package body, resin burrs on the exposed lower surface of the outer lead are reduced. As a result, the dimensional accuracy of the exposed portion is improved. The stepped portion can be formed by half press or half etching.

本発明により、非常に優れた放熱性を確保し、かつ基板への実装精度を高め、半田などの実装ペーストに剥離・亀裂等の不具合を発生させない半導体素子向け樹脂製中空パッケージを提供することができる。さらに本発明は、DIP、SOP、QFPなどに加え、面実装タイプ樹脂製中空パッケージでも同様の効果が得られ、極めて高い放熱性の薄型樹脂製中空パッケージも提供することができる。   According to the present invention, it is possible to provide a resin-made hollow package for a semiconductor element that ensures excellent heat dissipation, improves mounting accuracy on a substrate, and does not cause defects such as peeling and cracking in a mounting paste such as solder. it can. In addition to DIP, SOP, QFP, etc., the present invention can provide the same effect with a surface-mount type resin hollow package, and can also provide a thin resin hollow package with extremely high heat dissipation.

以下、図面に示す実施例に基づいて、本発明の実施の形態を説明する。   Hereinafter, embodiments of the present invention will be described based on examples shown in the drawings.

図1は本発明の一実施例による樹脂製中空パッケージを示す断面図である。同図に示す樹脂製中空パッケージにおいて、リードのインナーリード1の上面は中空部20内で露出し、アウターリード2は樹脂成形体からなるパッケージ本体3の外方でガルウィング曲げ(SOP、QFPタイプ)が施されている。そして、パッケージ本体3の底面部分にその底面(以下「パッケージ底面」という。)6よりも中空部20側に凹むようにパッケージ下面部5が設けられている。   FIG. 1 is a sectional view showing a resin hollow package according to an embodiment of the present invention. In the resin hollow package shown in the figure, the upper surface of the inner lead 1 of the lead is exposed in the hollow portion 20, and the outer lead 2 is gull-wing bent (SOP, QFP type) outside the package body 3 made of a resin molded body. Is given. A package lower surface portion 5 is provided on the bottom surface portion of the package body 3 so as to be recessed toward the hollow portion 20 rather than the bottom surface (hereinafter referred to as “package bottom surface”) 6.

図2は、図1の樹脂製中空パッケージを用いた半導体装置である。同図に示す半導体装置は、半導体素子7を中空部の底面4に固着し、電気的接合材8を用いて半導体素子7とインナーリード1を電気的に導通させ、蓋材9をパッケージ本体3の上面に固着し、気密封止することで得られ、実装基板17に実装ペースト18を用いて接着されている。この半導体装置は、図示のようにパッケージ下面部5と実装基板17との間の隙間に空気層19を備えている。ここで、半導体素子7が作動することによって発生した熱は、中空部の底面4からパッケージ下面部5に伝達され外気に放熱されるが、空気層19を備えていることにより、対流が発生しやすい環境となり、放熱効果を高めることが可能となる。   FIG. 2 shows a semiconductor device using the resin hollow package of FIG. In the semiconductor device shown in the figure, the semiconductor element 7 is fixed to the bottom surface 4 of the hollow portion, the semiconductor element 7 and the inner lead 1 are electrically connected using an electrical bonding material 8, and the lid 9 is attached to the package body 3. It is obtained by adhering to the upper surface of the substrate and hermetically sealing, and is bonded to the mounting substrate 17 using a mounting paste 18. This semiconductor device includes an air layer 19 in a gap between the package lower surface portion 5 and the mounting substrate 17 as shown in the figure. Here, the heat generated by the operation of the semiconductor element 7 is transmitted from the bottom surface 4 of the hollow portion to the package lower surface portion 5 and radiated to the outside air. However, the provision of the air layer 19 causes convection. It becomes an easy environment and it becomes possible to enhance the heat dissipation effect.

図3は、アイランド部10を中空部の底面4に露出させた構造の樹脂製中空パッケージを示す。アイランド部10は中空部の底面4からパッケージ下面部5の下面の間であれば、どの位置にあっても構わない。パッケージ下面部5の下面にアイランド部10が露出していても、パッケージ下面部5はパッケージ底面6よりも中空部20側に位置しているため、実装時の熱でアイランド部10が膨張しても実装基板と接することがなく、実装ペーストに亀裂・剥離等の不具合を発生させる危険性はない。また、アイランド部10は吊りリードを介してリードフレームに連結させて、成形後の目的とする位置に予め押し下げた(ディプレスした)ものを使用して、樹脂成形することにより容易に得ることができる。   FIG. 3 shows a resin hollow package having a structure in which the island portion 10 is exposed on the bottom surface 4 of the hollow portion. The island portion 10 may be located anywhere as long as it is between the bottom surface 4 of the hollow portion and the lower surface of the package lower surface portion 5. Even if the island portion 10 is exposed on the lower surface of the package lower surface portion 5, the package lower surface portion 5 is located closer to the hollow portion 20 than the package bottom surface 6, so that the island portion 10 expands due to heat during mounting. However, there is no risk of causing defects such as cracking and peeling in the mounting paste without contacting the mounting substrate. Further, the island portion 10 can be easily obtained by resin molding by connecting the island portion 10 to the lead frame via the suspension lead and pressing (depressed) in advance to the target position after molding. it can.

図4は、図1のインナーリード1の下面に絶縁層12を介して金属板11を固着させた構造の樹脂製中空パッケージを示す。金属板11の厚みは厚い方が好ましく、中空部の底面4とパッケージ下面部5のいずれの面にも露出する厚みの金属板を用いるとより高い放熱性が得られる。さらに金属板11の上面または下面、あるいは上下面に凹凸部を形成することで樹脂との密着性が高まり、かつ比表面積が増加することに伴い一段と放熱性を高めることが可能となる。   FIG. 4 shows a resin hollow package having a structure in which a metal plate 11 is fixed to the lower surface of the inner lead 1 of FIG. The thickness of the metal plate 11 is preferably thicker, and higher heat dissipation can be obtained by using a metal plate having a thickness exposed on both the bottom surface 4 of the hollow portion and the lower surface portion 5 of the package. Furthermore, by forming the concavo-convex portions on the upper surface or the lower surface or the upper and lower surfaces of the metal plate 11, the adhesion with the resin is increased, and the heat dissipation can be further enhanced as the specific surface area is increased.

図5は、リード下面部をエッチングすることで基板実装面となるアウターリード2の下面を残すように形成したリードフレームを用い、アウターリード2の下面がパッケージ底面6の周縁近傍で露出されている面実装タイプの樹脂製中空パッケージを示す。   FIG. 5 shows a lead frame formed so as to leave the lower surface of the outer lead 2 to be a substrate mounting surface by etching the lower surface of the lead, and the lower surface of the outer lead 2 is exposed near the periphery of the package bottom surface 6. Surface mount type resin hollow package is shown.

図6は、図5の構成に加えてアイランド部10を有した構造の面実装タイプの樹脂製中空パッケージを示す。アイランド部10も必要に応じエッチングなどにより厚みを薄くすることも可能である。   FIG. 6 shows a surface mount type resin hollow package having a structure having an island portion 10 in addition to the configuration of FIG. It is also possible to reduce the thickness of the island portion 10 by etching or the like as necessary.

図7は、図5のインナーリード1の下面に絶縁層12を介して金属板11を固着させた構造の面実装タイプの樹脂製中空パッケージを示す。図7の構造おいては、金属板11の上面に樹脂層13を設けている。   FIG. 7 shows a surface mount type resin hollow package having a structure in which a metal plate 11 is fixed to the lower surface of the inner lead 1 of FIG. In the structure of FIG. 7, a resin layer 13 is provided on the upper surface of the metal plate 11.

図8は、リードを屈曲部16にて屈曲させてアウターリード2を形成したリードフレームを用い、アウターリード2の下面がパッケージ底面6の周縁近傍で露出されている面実装タイプの樹脂製中空パッケージを示す。   FIG. 8 shows a surface mount type resin hollow package in which the lead is bent at the bent portion 16 to form the outer lead 2 and the lower surface of the outer lead 2 is exposed near the periphery of the package bottom surface 6. Indicates.

図9は、図8の構成に加えてアイランド部10を有した構造の面実装タイプの樹脂製中空パッケージを示す。   FIG. 9 shows a surface mount type resin hollow package having an island part 10 in addition to the configuration of FIG.

図10は、図8の屈曲させたリードのインナーリード1の下面に絶縁層12を介して金属板11を固着させている面実装タイプの樹脂製中空パッケージを示す。特に面実装タイプの中空パッケージでは、実装基板とパッケージ底面6とが略同一面上となり、従来、パッケージ底面6からの放熱は望めない状況であったが、本発明ではパッケージ底面6よりも、パッケージ下面部5となる金属板11の下面部分が中空部20側に位置し空気層が確保されることから、対流による放熱が可能となる。なお、図11に示すように、金属板11の上面に樹脂層13を設けてもよい。   FIG. 10 shows a surface mount type resin hollow package in which a metal plate 11 is fixed to the lower surface of the inner lead 1 of the bent lead of FIG. 8 via an insulating layer 12. In particular, in the case of a surface mount type hollow package, the mounting substrate and the package bottom surface 6 are substantially on the same surface, and heat radiation from the package bottom surface 6 has not been expected in the past. Since the lower surface portion of the metal plate 11 serving as the lower surface portion 5 is located on the hollow portion 20 side and an air layer is secured, heat dissipation by convection is possible. As shown in FIG. 11, a resin layer 13 may be provided on the upper surface of the metal plate 11.

図12は、図10のリード部拡大断面図であり、アウターリード2の屈曲端面部であり、リード屈曲部16の端面部に、段差部15を形成している。この段差部15によりアウターリード2の端面に樹脂バリが発生しにくく、寸法精度の高いアウターリードが提供できる。また、金属板11の側端部に段差部14を備えることで樹脂との密着性が高まり、界面剥離延いては気密性低下を防ぐことが可能となる。図13は、図10の樹脂製中空パッケージを用いた半導体装置である。   FIG. 12 is an enlarged sectional view of the lead portion of FIG. 10, which is a bent end surface portion of the outer lead 2, and a step portion 15 is formed on the end surface portion of the lead bent portion 16. Due to the step portion 15, resin burrs are hardly generated on the end face of the outer lead 2, and an outer lead having high dimensional accuracy can be provided. Further, by providing the step portion 14 at the side end portion of the metal plate 11, the adhesiveness with the resin is enhanced, and it becomes possible to prevent the interface peeling and the airtightness from being lowered. FIG. 13 shows a semiconductor device using the resin hollow package of FIG.

以下、図13に示す半導体装置の製造方法を説明する。   A method for manufacturing the semiconductor device shown in FIG. 13 will be described below.

まず、図に示されるようなSON型あるいはQFN型のリードフレームを準備し、リードに屈曲部16を形成しておく。リード屈曲部16にて形成されたインナーリード1の下面に絶縁層12を介して金属板11を固着され、リードと金属板11が一体化した構造とする。金属板11は、例えば銅、鉄、ステンレス、アルミニウム及びこれらの金属を含む合金からなる群から選択し、必要に応じて、金、銀、ニッケル、半田などのメッキを施しても良い。前記リード及び金属板11を成形金型に装着し、成形金型のキャビティーにエポキシ樹脂や熱可塑樹脂等の耐熱性樹脂をトランスファー成形あるいは射出成形にてインサート成形を行う。ここで、パッケージ下面部5の凹構造を形成するためには、同形状を成形金型で凸構造にしておけば良い。   First, a SON type or QFN type lead frame as shown in the figure is prepared, and a bent portion 16 is formed in the lead. A metal plate 11 is fixed to the lower surface of the inner lead 1 formed by the lead bent portion 16 via an insulating layer 12 so that the lead and the metal plate 11 are integrated. For example, the metal plate 11 may be selected from the group consisting of copper, iron, stainless steel, aluminum, and alloys containing these metals, and may be plated with gold, silver, nickel, solder, or the like as necessary. The lead and the metal plate 11 are mounted on a molding die, and insert molding is performed by transfer molding or injection molding of a heat-resistant resin such as epoxy resin or thermoplastic resin in a cavity of the molding die. Here, in order to form the concave structure of the package lower surface portion 5, the same shape may be formed into a convex structure with a molding die.

トランスファー成形を行う条件はエポキシ樹脂等により条件は異なる。一般的には、成形温度150〜200℃、成形圧力1〜50MPa、成形時間1〜40秒の条件、好ましくは成形温度165〜185℃、成形圧力5〜30MPa、成形時間3〜20秒の条件で行う。前記の成形法により成形後、必要に応じ熱を加えて樹脂を硬化させても良い。成形された成形体の露出したリード表面は樹脂バリが発生しているため、後工程にて樹脂バリの除去を行う必要がある。   The conditions for performing transfer molding differ depending on the epoxy resin or the like. Generally, the molding temperature is 150 to 200 ° C., the molding pressure is 1 to 50 MPa, the molding time is 1 to 40 seconds, preferably the molding temperature is 165 to 185 ° C., the molding pressure is 5 to 30 MPa, and the molding time is 3 to 20 seconds. To do. After molding by the above molding method, heat may be applied as necessary to cure the resin. Since resin burrs are generated on the exposed lead surface of the molded body, it is necessary to remove the resin burrs in a later step.

本発明の構造の場合、成形体表面に露出したインナーリードとアウターリード及び金属板はそれぞれ成形金型で強固にクランプされているので露出されたインナーリード上面とアウターリード下面及び金属板上下面に発生する樹脂バリも極めて少なくすることができる。一般的には樹脂バリを除去する際、高圧水が使用されるが、成形体に高圧水を施すと樹脂とリードの界面の強度が低下しやすくなる。本発明の構造の場合、露出したアウターリード2の端面部に段差部15を形成し、また金属板11の側端部に段差部14を形成しており、樹脂とリード、金属板との密着性が高く、剥離などの発生が抑えられ、気密性の低下が防げる。   In the case of the structure of the present invention, the inner lead, outer lead and metal plate exposed on the surface of the molded body are firmly clamped by the molding die, respectively, so that the exposed inner lead upper surface, outer lead lower surface and metal plate upper and lower surfaces are The generated resin burrs can be extremely reduced. In general, high-pressure water is used when removing the resin burrs. However, when high-pressure water is applied to the molded body, the strength of the interface between the resin and the lead tends to decrease. In the case of the structure of the present invention, the step portion 15 is formed on the exposed end surface portion of the outer lead 2 and the step portion 14 is formed on the side end portion of the metal plate 11 so that the resin, the lead, and the metal plate are in close contact with each other. It is highly resistant and prevents the occurrence of peeling and prevents airtightness from being reduced.

以上のようにして得られた樹脂製中空パッケージの中空部の底面4に固体撮像素子などの半導体素子7を接着剤等で固着した後、インナーリード1と半導体素子7を電気的接合材8で接続し、中空部20を蓋材9にて接着材などで接着して気密封止することで図13に示すような本発明の半導体装置が得られる。   After fixing the semiconductor element 7 such as a solid-state imaging element to the bottom surface 4 of the hollow portion of the resin hollow package obtained as described above with an adhesive or the like, the inner lead 1 and the semiconductor element 7 are connected with the electrical bonding material 8. The semiconductor device of the present invention as shown in FIG. 13 is obtained by connecting and sealing the hollow portion 20 with the lid member 9 with an adhesive or the like and hermetically sealing.

本発明の一実施例による樹脂製中空パッケージを示す断面図である。It is sectional drawing which shows the resin-made hollow packages by one Example of this invention. 図1の樹脂製中空パッケージを用いた半導体装置を基板に実装した状態を示す断面図である。It is sectional drawing which shows the state which mounted the semiconductor device using the resin-made hollow packages of FIG. 1 on the board | substrate. 本発明の一実施例によるアイランド部を有する樹脂製中空パッケージを示す断面図である。It is sectional drawing which shows the resin-made hollow packages which have an island part by one Example of this invention. 本発明の一実施例による絶縁層を介して固着された金属板を有する樹脂製中空パッケージを示す断面図である。It is sectional drawing which shows the resin-made hollow packages which have the metal plate fixed through the insulating layer by one Example of this invention. 本発明の一実施例による面実装タイプの樹脂製中空パッケージを示す断面図である。It is sectional drawing which shows the surface mount type resin hollow package by one Example of this invention. 本発明の一実施例によるアイランド部を有する面実装タイプの樹脂製中空パッケージを示す断面図である。It is sectional drawing which shows the surface mount type resin hollow package which has an island part by one Example of this invention. 本発明の一実施例による絶縁層を介して固着された金属板を有する面実装タイプの樹脂製中空パッケージを示す断面図である。It is sectional drawing which shows the surface mount type resin hollow package which has the metal plate fixed through the insulating layer by one Example of this invention. 本発明の一実施例によるリードに屈曲部を形成した面実装タイプの樹脂製中空パッケージを示す断面図である。It is sectional drawing which shows the surface mount type resin hollow package which formed the bending part in the lead | read | reed by one Example of this invention. 本発明の一実施例によるリードに屈曲部を形成し、アイランド部を有する面実装タイプの樹脂製中空パッケージを示す断面図である。It is sectional drawing which shows the surface mounting type resin hollow package which forms a bending part in the lead | read | reed by one Example of this invention, and has an island part. 本発明の一実施例によるリードに屈曲部を形成し、絶縁層を介して固着された金属板を有する面実装タイプの樹脂製中空パッケージを示す断面図である。It is sectional drawing which shows the surface mount type resin hollow package which forms the bending part in the lead | read | reed by one Example of this invention, and has the metal plate fixed through the insulating layer. 本発明の一実施例によるリードに屈曲部を形成し、絶縁層を介して固着された金属板と金属板上に樹脂層を有する面実装タイプの樹脂製中空パッケージを示す断面図である。It is sectional drawing which shows the surface mounting type resin hollow package which forms the bending part in the lead | read | reed by one Example of this invention, and has the resin layer on the metal plate fixed through the insulating layer, and a metal plate. 図10のリード屈曲部近傍を示す拡大断面図である。FIG. 11 is an enlarged cross-sectional view showing the vicinity of a bent lead portion in FIG. 10. 図10の樹脂製中空パッケージ用いた半導体装置を示す断面図である。It is sectional drawing which shows the semiconductor device using the resin-made hollow packages of FIG.

符号の説明Explanation of symbols

1 インナーリード
2 アウターリード
3 パッケージ本体(樹脂成形体)
4 中空部の底面(半導体素子実装面)
5 パッケージ下面部
6 パッケージ底面(パッケージ本体の底面)
7 半導体素子
8 電気的接合材
9 蓋材
10 アイランド部
11 金属板
12 絶縁層
13 樹脂層
14 金属板の段差部
15 リードの段差部
16 リード屈曲部
17 実装基板
18 実装ペースト
19 空気層
20 中空部
1 Inner lead 2 Outer lead 3 Package body (resin molding)
4 Bottom of the hollow part (Semiconductor element mounting surface)
5 Package bottom surface 6 Package bottom surface (bottom surface of package body)
7 Semiconductor element 8 Electrical joining material 9 Lid material 10 Island part 11 Metal plate 12 Insulating layer 13 Resin layer 14 Step part of metal plate
15 Lead stepped portion 16 Lead bent portion 17 Mounting substrate 18 Mounting paste 19 Air layer 20 Hollow portion

Claims (13)

半導体素子を装着するための底面を有する中空部と、この中空部に装着される半導体素子と外部との電気的導通を実現するリードと、パッケージ本体を構成する樹脂成形体とからなる樹脂製中空パッケージにおいて、その底面部分にパッケージ本体の底面よりも中空部側に位置するパッケージ下面部が設けらていることを特徴とする樹脂製中空パッケージ。   A resin hollow comprising a hollow portion having a bottom surface for mounting a semiconductor element, a lead for realizing electrical continuity between the semiconductor element mounted in the hollow portion and the outside, and a resin molded body constituting the package body In the package, a resin-made hollow package characterized in that a bottom surface portion of the package is provided with a lower surface portion of the package located closer to the hollow portion than the bottom surface of the package body. 中空部の底面、パッケージ下面部またはその内部に、少なくとも半導体素子の底面と同じ大きさを有する金属板からなるアイランド部を具備した請求項1に記載の樹脂製中空パッケージ。   The resin hollow package according to claim 1, wherein an island portion made of a metal plate having at least the same size as the bottom surface of the semiconductor element is provided in the bottom surface of the hollow portion, the lower surface portion of the package, or the inside thereof. 中空部の底面と同じかもしくはそれよりも広い金属板が、インナーリード下面に絶縁層を介して固着されている請求項1に記載の樹脂製中空パッケージ。   2. The resin hollow package according to claim 1, wherein a metal plate that is the same as or wider than the bottom surface of the hollow portion is fixed to the lower surface of the inner lead via an insulating layer. 金属板の上面の少なくとも一部が中空部の底面に露出されている請求項3に記載の樹脂製中空パッケージ。   The resin hollow package according to claim 3, wherein at least a part of an upper surface of the metal plate is exposed on a bottom surface of the hollow portion. 金属板の上面に樹脂層が形成されている請求項3に記載の樹脂製中空パッケージ。   The resin hollow package according to claim 3, wherein a resin layer is formed on an upper surface of the metal plate. 金属板の上面または下面あるいは上下面に凹凸部が形成されている請求項3に記載の樹脂製中空パッケージ。   The resin hollow package according to claim 3, wherein uneven portions are formed on an upper surface, a lower surface, or an upper and lower surface of the metal plate. 金属板の側端部の少なくとも一部に、段差部が形成されている請求項3に記載の樹脂製中空パッケージ。   The resin hollow package according to claim 3, wherein a step portion is formed on at least a part of a side end portion of the metal plate. リードは、その下面部の一部をエッチングすることで基板実装面となるアウターリードの下面を残すように形成され、前記アウターリードの下面がパッケージ本体の底面の周縁近傍で露出されている請求項1〜7のいずれかに記載の樹脂製中空パッケージ。   The lead is formed so as to leave a lower surface of the outer lead to be a substrate mounting surface by etching a part of the lower surface portion, and the lower surface of the outer lead is exposed in the vicinity of the periphery of the bottom surface of the package body. The resin-made hollow package in any one of 1-7. リードを屈曲し、このリードのアウターリードの下面がパッケージ本体の底面の周縁近傍で露出されている請求項1〜7のいずれかに記載の樹脂製中空パッケージ。   The resin hollow package according to any one of claims 1 to 7, wherein a lead is bent, and a lower surface of an outer lead of the lead is exposed near a peripheral edge of a bottom surface of the package body. アウターリードの下面の屈曲端面部に、段差部が形成されている請求項9に記載の樹脂製中空パッケージ。   The resin hollow package according to claim 9, wherein a stepped portion is formed on a bent end surface portion of a lower surface of the outer lead. 基板とパッケージ下面部との間の隙間と外部とを連通する気流通路が形成されている請求項1〜10のいずれかに記載の樹脂製中空パッケージ。   The resin-made hollow package according to any one of claims 1 to 10, wherein an airflow passage that communicates a gap between the substrate and the package lower surface portion and the outside is formed. 請求項1〜11のいずれかに記載の樹脂製中空パッケージを用いた半導体装置であって、半導体素子が樹脂製中空パッケージの中空部の底面に固着され、リードフレームのインナーリードと半導体素子が電気的に接続され、樹脂製中空パッケージの中空部が蓋材で気密封止された半導体装置。   12. A semiconductor device using the resin hollow package according to claim 1, wherein the semiconductor element is fixed to the bottom surface of the hollow portion of the resin hollow package, and the inner lead of the lead frame and the semiconductor element are electrically connected. Device in which the hollow part of the resin hollow package is hermetically sealed with a lid material. 基板とパッケージ下面部との間の隙間と外部とを連通する気流通路が形成されている請求項12に記載の半導体装置。   The semiconductor device according to claim 12, wherein an air flow path is formed to communicate the gap between the substrate and the package lower surface portion and the outside.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007201376A (en) * 2006-01-30 2007-08-09 Yamaha Corp Semiconductor device
JP2009054678A (en) * 2007-08-24 2009-03-12 Mitsui Chemicals Inc Hollow package, and semiconductor device
KR20150016082A (en) * 2013-08-01 2015-02-11 가부시끼가이샤 도시바 Solid-state imaging device and manufacturing method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007201376A (en) * 2006-01-30 2007-08-09 Yamaha Corp Semiconductor device
JP2009054678A (en) * 2007-08-24 2009-03-12 Mitsui Chemicals Inc Hollow package, and semiconductor device
KR20150016082A (en) * 2013-08-01 2015-02-11 가부시끼가이샤 도시바 Solid-state imaging device and manufacturing method thereof
KR101597892B1 (en) 2013-08-01 2016-02-25 가부시끼가이샤 도시바 Solid-state imaging device and manufacturing method thereof

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