JP2006278505A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2006278505A5 JP2006278505A5 JP2005092444A JP2005092444A JP2006278505A5 JP 2006278505 A5 JP2006278505 A5 JP 2006278505A5 JP 2005092444 A JP2005092444 A JP 2005092444A JP 2005092444 A JP2005092444 A JP 2005092444A JP 2006278505 A5 JP2006278505 A5 JP 2006278505A5
- Authority
- JP
- Japan
- Prior art keywords
- carbon nanotube
- electron beam
- substrate
- state
- irradiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 20
- 239000002041 carbon nanotube Substances 0.000 claims description 20
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 20
- 238000010894 electron beam technology Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 6
- 230000005684 electric field Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005092444A JP4627206B2 (ja) | 2005-03-28 | 2005-03-28 | ナノチューブトランジスタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005092444A JP4627206B2 (ja) | 2005-03-28 | 2005-03-28 | ナノチューブトランジスタの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006278505A JP2006278505A (ja) | 2006-10-12 |
| JP2006278505A5 true JP2006278505A5 (https=) | 2007-03-15 |
| JP4627206B2 JP4627206B2 (ja) | 2011-02-09 |
Family
ID=37212983
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005092444A Expired - Fee Related JP4627206B2 (ja) | 2005-03-28 | 2005-03-28 | ナノチューブトランジスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4627206B2 (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100877690B1 (ko) | 2006-12-05 | 2009-01-08 | 한국전자통신연구원 | 나노 와이어 배열 소자 제조방법 |
| US7846786B2 (en) | 2006-12-05 | 2010-12-07 | Korea University Industrial & Academic Collaboration Foundation | Method of fabricating nano-wire array |
| JP4666270B2 (ja) * | 2006-12-18 | 2011-04-06 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| JP4988369B2 (ja) * | 2007-02-05 | 2012-08-01 | 日本電信電話株式会社 | カーボンナノチューブトランジスタの製造方法 |
| US8421129B2 (en) | 2007-04-16 | 2013-04-16 | Nec Corporation | Semiconductor device using carbon nanotubes for a channel layer and method of manufacturing the same |
| US9174847B2 (en) | 2008-05-01 | 2015-11-03 | Honda Motor Co., Ltd. | Synthesis of high quality carbon single-walled nanotubes |
| CN108020573B (zh) * | 2016-10-31 | 2019-12-17 | 清华大学 | 区分碳纳米管类型的方法 |
| CN108023016B (zh) * | 2016-10-31 | 2020-07-10 | 清华大学 | 薄膜晶体管的制备方法 |
| CN108017048B (zh) * | 2016-10-31 | 2020-01-07 | 清华大学 | 半导体层的制备方法 |
| CN113130620B (zh) * | 2020-01-15 | 2023-07-18 | 清华大学 | 场效应晶体管 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004347532A (ja) * | 2003-05-23 | 2004-12-09 | Japan Science & Technology Agency | バイオセンサー |
| US20050036905A1 (en) * | 2003-08-12 | 2005-02-17 | Matsushita Electric Works, Ltd. | Defect controlled nanotube sensor and method of production |
| EP1508926A1 (en) * | 2003-08-19 | 2005-02-23 | Hitachi, Ltd. | Nanotube transistor device |
-
2005
- 2005-03-28 JP JP2005092444A patent/JP4627206B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Meric et al. | Channel length scaling in graphene field-effect transistors studied with pulsed current− voltage measurements | |
| JP5220300B2 (ja) | カーボン・ナノチューブ電界効果トランジスタ、これを形成する方法及び相補型カーボン・ナノチューブ・デバイス | |
| Tulevski et al. | Toward high-performance digital logic technology with carbon nanotubes | |
| JP5256850B2 (ja) | 電界効果トランジスタ及びその製造方法 | |
| KR20110042952A (ko) | 레이저 광을 이용한 그라핀의 힐링방법 및 전자소자 제조방법 | |
| JP2006278505A5 (https=) | ||
| Jadwiszczak et al. | Plasma treatment of ultrathin layered semiconductors for electronic device applications | |
| EP1717847A3 (en) | Semiconductor device and method for manufacturing the same | |
| JP2008511169A5 (https=) | ||
| AU2002322459A1 (en) | Single-electron transistors and fabrication methods | |
| JP2008270758A5 (https=) | ||
| TW200717657A (en) | Semiconductor device and fabrication method thereof | |
| JP2008078634A5 (https=) | ||
| WO2009031681A1 (ja) | スイッチング素子及びその製造方法 | |
| JP2005167256A5 (https=) | ||
| TW200512787A (en) | A carbon nanotubes field emission display and the fabricating method of which | |
| TW200729354A (en) | Method for manufacturing carbon nano-tube FET | |
| Aijiang | Piezoelectric Phenomenon of Fullerene‐Graphene Bonded Structure | |
| JP2019536255A5 (https=) | ||
| US8795772B2 (en) | Method of forming nano-pads of catalytic metal for growth of single walled carbon nanotubes | |
| JP2006332614A5 (https=) | ||
| Franklin | Carbon nanotube electronics | |
| JP4988369B2 (ja) | カーボンナノチューブトランジスタの製造方法 | |
| JP2011505055A5 (https=) | ||
| Wei et al. | GaN Nano Air Channel Diodes with Ultralow Turn-On Voltages for NAND Logic Circuits |