JP2006274284A - Flow rate control device for evaporation material, and vapor deposition apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a flow rate control device for an evaporation material capable of realizing a smooth flow in a transfer pipe of the evaporation material, and suppressing a change in concentration of the evaporation material even when opening/closing a valve. <P>SOLUTION: The flow rate control device comprises: a partition member 11 which is arranged in the middle inside an evaporation material transfer pipe 6 and has a middle stage vertical portion 11b with a through hole 12 for communication formed therein; a needle valve body 15 which is provided movably in the horizontal direction with respect to the through hole for communication of the middle stage vertical portion and has a conical portion 15b capable of opening/closing the through hole for communication, formed on a tip; a opening/closing means for opening and closing the through hole for communication by the conical portion by moving the needle valve body to the through hole for communication; a gas discharge pipe 16 which is arranged so that the needle valve body is inserted therein and the tip is protruded outward of a center of the conical part and has a gas discharge hole 16a formed in the tip; and a sealing bellows 21 provided between the needle valve body side and the evaporation material transfer pipe side. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an evaporation material flow rate control device and an evaporation apparatus provided in an evaporation material transfer pipe for transferring an evaporation material evaporated by an evaporation source to an evaporation chamber.

For example, a panel display using an organic EL material is formed by evaporating an evaporation material such as an organic material on an evaporation target member such as a glass substrate.
Usually, the vapor deposition material is heated in a crucible, and the evaporated vaporized material is introduced into the vacuum vessel and discharged onto the surface of a vapor deposition member disposed in the vacuum vessel to perform vapor deposition (so-called film formation). ing.

Usually, in order to make the thickness of the vapor deposition film uniform, a flow rate control valve is interposed in the middle of a transfer pipe for the vaporization material from the crucible to the vapor deposition chamber to control the supply amount of the vaporization material. .
In addition, when changing the type of vapor deposition material, that is, at the start of vapor deposition and at the end of vapor deposition, it is necessary to control the supply amount of the vaporized material.

For this reason, in such a case, a flow rate control valve is interposed in the middle of the evaporation material transfer pipe between the crucible and the vapor deposition chamber (see, for example, Patent Document 1).
JP-A-5-249868

  By the way, a normal gate valve is used as the flow control valve, and the evaporating material flowing in the evaporating material transfer pipe becomes a viscous flow, so it may not flow smoothly. In addition, the gate valve is opened and closed. At this time, evaporating material accumulates in the vicinity of the valve body, and when the supply of evaporating material is resumed, the concentration changes and the film thickness becomes non-uniform. There is a fear.

  Therefore, the present invention provides a flow control device for an evaporative material that can smooth the flow in the evaporative material transfer pipe and can also prevent the concentration of the evaporative material from changing even when the valve is opened and closed. It aims at providing the vapor deposition apparatus using an apparatus.

In order to solve the above-described problem, the evaporative material flow rate control device according to claim 1 of the present invention is an evaporative material flow rate control device provided in an evaporative material transfer pipe for transferring the evaporative material evaporated by the evaporation source to the vapor deposition chamber. Because
A partition member disposed in the middle of the evaporating material transfer pipe and having a communication opening hole;
A needle valve body which is provided movably with respect to the communication opening hole and has a conical portion formed at the tip thereof capable of opening and closing the communication opening hole;
Opening and closing means for moving the needle valve body with respect to the communication opening hole and opening and closing the communication opening hole by the conical portion;
A gas discharge pipe which is inserted through the needle valve body and provided with a distal end projecting outward from the center of the conical section and having a gas ejection hole for discharging an inert gas at the distal end; and
It comprises sealing means provided between the needle valve body side and the evaporating material transfer pipe side.

According to a second aspect of the present invention, there is provided a flow rate control device for an evaporating material, in which a heater is disposed inside the tip of the needle valve body in the flow control device according to the first aspect.
Furthermore, the vapor deposition apparatus according to claim 3 of the present invention includes one vapor deposition chamber and a plurality of evaporation sources, and an evaporation material transfer pipe that guides the evaporation material evaporated in each evaporation source to the vapor deposition chamber. Consists of a branch pipe part on the evaporation source side and a merging pipe part on the deposition chamber side
The flow rate control device according to claim 1 or 2 is arranged in each branch pipe portion of the evaporating material transfer pipe.

  Moreover, the vapor deposition apparatus which concerns on Claim 4 of this invention is based on the opening amount of the needle valve body of the flow control apparatus which controls the evaporation material flow volume from the evaporation source in use in the vapor deposition apparatus of Claim 3. In addition, a control means for obtaining the preheating start timing of the evaporation source to be used next and starting the preheating of the evaporation source is provided.

Furthermore, the vapor deposition apparatus according to claim 5 of the present invention is the vapor deposition apparatus according to claim 4, further comprising a vapor deposition rate detecting means for detecting the vapor deposition rate on the deposition surface,
The function of controlling each flow rate control device corresponding to both evaporation sources related to the switching so that the detected vapor deposition rate detected by the vapor deposition rate detection means becomes a set value when the evaporation source is switched to the control means. Is provided.

  According to the configuration of the flow rate control device according to claim 1 or 2, the needle valve body that performs flow rate control by opening and closing a communication opening formed in a partition member provided in the middle of the evaporating material transfer pipe is provided. Since the gas discharge pipe that can discharge the inert gas from the tip is inserted, the evaporation material flowing in a viscous flow manner in the evaporation material transfer pipe flows smoothly like a lean flow in the diffusion container. Therefore, it is possible to further improve the uniformity of the film thickness of the deposited film, and to attract the evaporation material staying around the needle valve body even when the needle valve body is opened and closed. Can further contribute to the development.

  Moreover, according to the structure of the vapor deposition apparatus of Claim 3, since the several evaporation source was provided, vapor deposition operation | work can be performed continuously by switching these, Therefore Improvement of work efficiency can be aimed at. .

  Moreover, according to the structure of the vapor deposition apparatus of Claim 4, the remainder of the vapor deposition material of the evaporation source currently in use can be grasped, and according to this, the reserve of the vapor deposition material of the evaporation source to be used next is reserved. Heating can begin. Accordingly, it is possible to prevent an expensive vapor deposition material such as an organic EL material that deteriorates by heating the organic EL material or the like for a long time from being unnecessarily heated for a long time.

  Furthermore, according to the structure of the vapor deposition apparatus of Claim 5, when the vapor deposition material in one evaporation source is used up, it can prevent that a vapor deposition rate falls. That is, the vapor deposition material can be used up without reducing the vapor deposition work efficiency.

[Embodiment 1]
Hereinafter, the evaporative material flow rate control apparatus according to Embodiment 1 of the present invention will be described with reference to FIGS.

  In this Embodiment 1, the case where the display part of an organic electroluminescent display is manufactured, ie, the case where it provides in the vapor deposition apparatus for vapor-depositing an organic material on the surface of a glass substrate is demonstrated.

First, a schematic configuration of the vapor deposition apparatus will be described with reference to FIG.
In this vapor deposition apparatus 1, a glass substrate 2 which is a member to be vapor deposited is disposed in a vapor deposition container (deposition chamber) 3 disposed so that the vapor deposition surface is downward, and a position below the vapor deposition container 3. And an evaporation source 4 having a crucible for evaporating the organic material (hereinafter, the organic material is referred to as an evaporation material, and the evaporated organic material is referred to as an evaporation material), and disposed in the evaporation vessel 3 and above the crucible 4 A diffusion container (also referred to as a diffusion chamber or a diffusion space) 5 for discharging the evaporation material substantially uniformly over the entire deposition surface (the lower surface in the drawing) of the glass substrate 2, and the evaporation source 4 and an evaporation material transfer pipe (hereinafter simply referred to as a transfer pipe) 6 provided between the diffusion container 5 and the diffusion container 5 for transferring the evaporation material from the evaporation source 4 to the diffusion container 5. And the flow control of the evaporation material provided in the middle of the transfer pipe 6 In order to discharge the air in the vessel 3 to a vacuum (predetermined degree of vacuum) by being connected to the vapor deposition vessel 3 through a device 7 and a pipe 8a having an on-off valve (not shown) in the middle. The exhaust device 8 is provided. In addition, the exhaust apparatus 9 for exhausting the air inside the evaporation source 4 through a connection pipe 9a having an on-off valve (not shown) in the middle to bring it into a vacuum (under a predetermined degree of vacuum). Is connected. Of course, although not shown, the deposition container 3 is provided with an opening and an opening / closing lid for exchanging the glass substrate 2, and the evaporation source 4 is provided with an opening and an opening / closing lid for exchanging the crucible. In addition, when the inside of the vapor deposition container 3 and the evaporation source 4 is evacuated by the exhaust devices 8 and 9, the on-off valves provided in the connection pipes 8a and 9a are opened.

Next, the said flow control apparatus 7 is demonstrated based on FIGS.
As shown in FIGS. 2 and 3, the flow control device 7 is arranged in the transfer pipe 6 so as to block the flow path in the pipe, and the side view has a stepped shape, that is, the upper horizontal portion 11a. A partition member 11 composed of a middle vertical portion (vertical wall portion) 11b and a lower horizontal portion 11c in which a conical communication opening hole (hereinafter simply referred to as an opening hole) 12 is formed, and corresponds to the partition member 11 And a flow rate control valve 13 mounted in the horizontal direction so as to penetrate the side wall of the transfer pipe 6 at a position corresponding to the opening hole 12.

  The flow rate control valve 13 includes a cylindrical guide body 14 attached in a horizontal direction to the outer periphery of an opening 6a formed on the side wall of the transfer pipe 6 at a position corresponding to the opening hole 12, and the cylindrical guide body. 14 is a cylindrical needle having a conical portion 15b that is guided in a horizontally movable manner through an annular flange portion 15a provided in the rear end portion and that can open and close the opening hole 12 at the front end. A valve body 15 and a gas discharge hole 16a that is inserted into the needle valve body 15 so as to protrude from the tip and discharge the inert gas downstream of the transfer pipe 6 are formed on the top surface of the tip. The gas supply pipe 16, the gas on-off valve 17 provided in the middle of the gas supply pipe 16 and capable of controlling the flow rate of the inert gas, and the needle valve body 15 in the horizontal direction (even in the direction orthogonal to the opening hole 12) Reciprocating An opening / closing means (also a moving means) 18 that opens and closes the opening hole 12 by the conical portion 15b, an opening / closing control means 19 for controlling the gas opening / closing valve 17 and the opening / closing means 18, and the needle valve An annular flange portion which is a sliding portion between the opening portion 6a and the cylindrical guide body 14 formed at the rear portion of the needle valve body 15 in order to perform sealing when the body 15 is disposed in the opening portion 6a of the transfer pipe 6. A bellows 21 which is a sealing means provided between 15a and 15a, a valve element heater (for example, a nichrome wire is used) 22 disposed inside the tip end side of the needle valve element 15, and a needle A pipe heater (for example, nichrome wire is used) 23 wound around the outer periphery of the valve body 15 and around the transfer pipe 6 in the vicinity of the attachment of the needle valve body 15; And a heater control unit 24 for controlling the valve body for a heater 22.

  The opening / closing means 18 is attached to the rear end face of the annular flange portion 15a of the needle valve body 15 and screwed into the engagement plate body 25 having a screw hole 25a formed in the center and the screw hole 25a of the engagement plate body 25. The rod-shaped male screw body 26 and an electric motor 27 that rotates the rod-shaped male screw body 26 in the forward and reverse directions.

  Then, as shown in FIG. 4, the opening / closing control means 19 is configured so that the deposition rate on the deposition surface of the glass substrate 2 in the deposition container 3 becomes a set value (hereinafter referred to as a set rate). The body 15 and the gas on-off valve 17 are controlled, and a deposition rate setting unit 31 for setting a set rate and a deposition rate detector for detecting a deposition rate on the deposition surface of the glass substrate 2 (for example, a deposition surface) A vapor deposition rate detector 32 that includes a film thickness detector disposed in the vicinity and a vapor deposition rate calculation unit that calculates the vapor deposition rate by inputting the film thickness detected by the film thickness detector. The detected vapor deposition rate detected in step 1 and the set rate from the vapor deposition rate setting unit 31 are input, and the motor 27 for moving the needle valve body 15 and the gas supply pipe 16 are arranged so that there is no deviation between the two rates. And a calculation control unit 33 for controlling the gas on-off valve 17 which is.

  That is, when the detected vapor deposition rate is low, the calculation control unit 33 opens the opening hole 12 by retracting the needle valve body 15 and separating the conical portion 15b from the opening hole 12, and the transfer pipe 6 When the flow rate of the evaporation material C moving from the upstream flow path A to the downstream flow path B is increased, and when the detected vapor deposition rate is high, the needle valve body 15 is advanced to move the flow rate in the transfer pipe 6. The flow rate of the evaporating material C moving from the upstream channel A to the downstream channel B is reduced.

  At this time, the supply amount of the inert gas is also controlled (increased / decreased) according to the flow rate of the evaporation material C by the arithmetic control unit 33. Regarding the control of the supply amount of the inert gas, for example, the flow rate of the evaporation material C (which is also the opening degree of the needle valve body) is divided in stages, and the supply amount according to this division and the vapor deposition material used. Is determined in advance.

  Further, as shown in FIG. 2, the heater control means 24 is for maintaining at least the temperature of the tip of the needle valve body 15 at a predetermined temperature, and is disposed inside the tip of the needle valve body 15. A temperature detector (for example, a thermocouple is used) 35 and a detected temperature from the temperature detector 35 are input and a temperature deviation from a set temperature is obtained, and the valve element heater 22 is set so that this temperature deviation is eliminated. It is comprised from the electric power control part 36 which controls the electric power to supply.

The tube heater 23 is also configured to be supplied with constant power, but the power control unit 36 may control the power of the tube heater 23.
Further, as described above, the inner surface shape of the opening hole 12 is a conical shape that matches the outer surface shape of the conical portion 15b of the needle valve body 15, and is further formed on the tip flat portion 15c of the needle valve body 15. An annular projecting portion 15d that contacts the surface of the middle vertical portion 11b of the partition member 11 is formed to prevent leakage when the opening hole 12 is closed. Instead of the annular projecting portion 15d, a metal O-ring may be attached.

The case where the vapor deposition apparatus 1 performs vapor deposition (film formation) of an organic material on the glass substrate 2 in the vapor deposition container 3 will be described.
When the evaporation source 4 filled with the vapor deposition material is heated to a predetermined temperature in a state where the entire vapor deposition apparatus 1 is under a predetermined vacuum, the vapor deposition material evaporates, and the vaporized evaporation material is transferred to the transfer pipe 6. Rise inside.

  As shown in FIG. 5, when the needle valve body 15 is retracted by the opening / closing means 18 and the opening hole 12 is opened, the evaporation material (also referred to as evaporation flux) C is diffused with a flow rate corresponding to the opening area. It is moved into the container 5.

  During this movement, an inert gas such as argon gas is jetted upward (downstream) from the gas discharge hole 16a at the tip of the gas supply pipe 16, and the evaporating material is generated by the upward flow of the jetted inert gas. Is attracted into the diffusion container 5, the vaporized material that becomes a viscous flow moves smoothly in the transfer pipe 6. That is, retention due to the viscosity of the evaporation material in the transfer pipe 6 is improved.

  As described above, the opening degree of the needle valve body 15 and the amount of inert gas released during vapor deposition are controlled by the calculation control unit 33 so that the vapor deposition rate on the vapor deposition surface becomes a set rate. ing. Of course, feedback control is used.

  When the vapor deposition is completed or when the vapor deposition material is exchanged, the needle valve body 15 is closed. Even immediately after the needle valve body 15 is closed, the inert gas is released from the gas discharge hole 16a of the gas supply pipe 16. Therefore, the evaporation material staying in the vicinity of the partition member 11, particularly in the corner, is also reliably moved to the diffusion container 5 by the upward flow of the inert gas.

  That is, the evaporating material is in the form of a viscous flow in the transfer pipe 6, but the flow becomes smooth due to the release of the inert gas. Therefore, when the flow rate when the needle valve body 15 is opened and closed is shown in a graph, FIG. become that way. In FIG. 6, the case where the inert gas is released is indicated by a solid line, and the case where the inert gas is not used is indicated by a broken line.

  As shown by the solid line in FIG. 6, when the change in the evaporation rate of the evaporation material when the needle valve body 15 is opened and closed, there is almost no time delay compared to the conventional case indicated by the broken line. It can be seen that the control performance is improved.

  In other words, since the release delay when the needle valve body 15 is opened due to the viscosity and the loose release (movement) of the residue on the downstream side when the needle valve body 15 is closed are improved, the glass substrate 2 The replacement time and vapor deposition time can be shortened, and since no time delay occurs, it is not necessary to provide a separate shutter, and controllability based on the detected vapor deposition rate is improved, resulting in non-uniform film thickness. Can be prevented.

  In this manner, the inert gas is released from the tip of the needle valve body 15 that controls the flow rate by opening and closing the opening hole 12 formed in the partition member 11 provided in the middle of the transfer pipe 6 for the evaporation material. Since the gas discharge pipe 16 to be obtained is inserted, the evaporating material that flows in the form of a viscous flow in the transfer pipe 6 can flow smoothly like a dilute flow in the diffusion container 5, and thus the deposited film The film thickness can be made more uniform, and the evaporation material staying around (for example, the corner) can be attracted even when the needle valve body 15 is opened and closed. It is possible to further contribute to the improvement of the working time and the uniformity of the film thickness.

  More specifically, when the evaporation material is a material for organic EL, the molecular weight of the material is large and the viscosity resistance becomes high in the state after evaporation (flux state). To prevent the flow rate control response speed (control accuracy) when the needle valve body 15 is opened / closed from slowing down due to conductance when passing between the needle valve body 15 and the needle valve body 15, thereby increasing an error with respect to a predetermined film thickness. Can do.

  Moreover, in addition to making the flow of the evaporation material due to the release of the inert gas smooth, at least the needle valve body 15 itself is provided with the valve body heater 22, so that compared with the case where the valve body portion is heated from the outside, The temperature of the evaporating material can be controlled with high accuracy, and is therefore suitable when using a material that is easily thermally decomposed, such as an organic EL.

Further, as described in the above-described embodiment, the temperature is controlled with higher accuracy by heating from the inner side which is the needle valve body 15 itself and the outer side which is the transfer pipe 6 itself using the pipe heater 23. be able to.
[Embodiment 2]
Hereinafter, the vapor deposition apparatus which concerns on Embodiment 2 of this invention is demonstrated based on FIGS.

  In the first embodiment, the flow control device for the evaporation material has been described. In the second embodiment, the flow control device described in the first embodiment and a vapor deposition apparatus in which a plurality of evaporation sources are arranged will be described. .

  In this vapor deposition apparatus, by arranging a plurality of sets of evaporation sources and flow rate control devices, it is possible to maintain a long vapor deposition time by using a plurality of evaporation sources, and prepare for the start of evaporation at the next evaporation source to be used. Thus, the work of switching the evaporation source (replacement work of the crucible) is shortened.

  The vapor deposition apparatus according to the second embodiment uses the configuration of the flow rate control device and the evaporation source described in the first embodiment as they are, and therefore, in the second embodiment, pay attention to different parts. In addition, the same components as those described in the first embodiment are denoted by the same component numbers, and detailed description thereof is omitted.

  As shown in FIG. 7, the vapor deposition apparatus 51 includes two evaporation sources (evaporation chambers) 4 each having a crucible for one vapor deposition container (deposition chamber) 3, and both the evaporation sources 4 ( The evaporating material transfer pipe 6 for guiding the evaporating material from 4A, 4B) to the vapor deposition vessel 3 is formed in a bifurcated shape.

  That is, the evaporating material transfer pipe 6 is composed of branch pipe parts 61A and 61B connected to the respective evaporation sources 4A and 4B and a joining pipe part 61C connected to the vapor deposition container 3 side. The branch pipe portions 61A and 61B are provided with flow rate control devices 7 (7A and 7B).

  Of course, for each of these flow control devices 7 (7A, 7B), as shown in FIG. 8, the downstream side branch pipe portion is arranged in the horizontal direction so as to face the merge portion, and the gas discharge hole 16a. When the evaporation sources 4A and 4B are switched to the point formed on the front end surface so that the direction is directed to the joining portion (downstream portion) and the opening / closing control means 71, the deposition rate is set to a set value (hereinafter, set) It is different from that described in the first embodiment in that a function for providing a rate is provided, and the other configurations are the same.

  In this open / close control means 71, the temperature of the crucible at the evaporation source 4 (for example, the temperature rise speed) is set, the opening of the needle valve body 15 at each flow rate control device 7 is controlled, and the glass when the evaporation source 4 is switched. A control function (to be described later) for setting the vapor deposition rate on the substrate 2 to a set rate is provided, and the opening / closing control means 71 inputs (understands) the opening amount of the needle valve body 15 in each flow control device 7. )

Hereinafter, the vapor deposition operation in the vapor deposition apparatus 51 will be described.
The evaporation material obtained by heating the crucible of one evaporation source 4 is introduced into the evaporation vessel 3 through the evaporation material transfer pipe 6 and evaporated on the evaporation surface of the glass substrate 2, that is, in the crucible. Since the operation until the evaporation material is reduced is the same as that in the first embodiment, the operation for switching the evaporation source 4 which is a different part will be described.

  That is, while the crucible of one evaporation source (currently used evaporation source) 4A is heated to release the evaporation material, the other evaporation source (which is the next used evaporation source) 4B The sample is preheated to a predetermined temperature (a temperature just before evaporation) under a predetermined vacuum to prepare for the start of evaporation. Of course, when the evaporation source 4 is under a predetermined vacuum, the exhaust device 9 is operated.

Further, the crucible is slowly heated to a temperature just before the evaporation which is a predetermined temperature, and is performed while taking into consideration a reduction in the amount of evaporation material released from the evaporation source 4A currently used (evaporation).
This reduced state of the discharge amount is grasped by the opening amount (%) of the needle valve body 15 in the flow rate control device 7 (7A). For example, it is necessary to know in advance how much the opening amount of the needle valve body 15 is retreated (based on the closed state), and how much the retraction amount of the needle valve body 15 (how much the motor is moved) The amount of opening is to be read from the head), and the temperature rise start time is calculated in a reverse calculation by examining in advance how much time (temperature rise time) it takes to reach the temperature just before evaporation in preheating. The amount of opening is determined in advance, and preheating is started when the amount of opening is reached.

  In addition, for each heating temperature (temperature increase speed), grasp the time required until the temperature immediately before evaporation (temperature increase time) and the time until the current opening amount and the opening amount that needs to be replaced (replacement remaining time). If the relationship between the heating temperature and the amount of opening is set by an appropriate combination of the heating time of each heating temperature and the remaining exchange time, preheating starts at an appropriate heating temperature according to the amount of opening. It can also be automated.

Of course, each of these controls is performed by the opening / closing control means 71, and each control function is provided.
FIG. 9 shows a control state of the needle valve body 15 by the opening / closing control means 71 when the evaporation source 4 is switched.

  9A shows the vapor deposition rate, FIG. 9B shows the opening degree of the needle valve body 15, and the mountain-shaped portions in these graphs indicate that the vapor deposition operation is being performed, and the valley-shaped portions are glass. It shows that the substrate is being replaced.

  In FIG. 9, first (currently), the needle valve body 15 is controlled by the flow rate control device 7A in the evaporation source 4 being used, and the operation is performed so that the deposition rate becomes the set rate. After that, a state is shown in which the transition to the control of the needle valve body 15 by the flow rate control device 7B at the next evaporation source 4 is shown.

The vapor deposition rate in FIG. 9A is controlled so as to be stable, but the vapor deposition material of the evaporation source 4 decreases with time, and naturally the evaporation amount also decreases as shown by the broken line.
About the opening degree of the needle valve body 15 of FIG.9 (b), it is so high that the peak part goes to the right (time progress), and if the opening degree is not enlarged gradually, a vapor deposition rate cannot be maintained at a set rate. It is shown that.

  Eventually, the opening degree of the needle valve element 15 approaches 100%, but when the predetermined opening degree is reached, the needle valve element 15 in the other flow rate control device 7B maintained immediately before the evaporation temperature by preheating. Is gradually released (indicated by a broken line), the vapor deposition rate is maintained by the sum of the evaporation amount from the previous evaporation source 4A and the evaporation amount from the next evaporation source 4B.

  When it is determined that the crucible in the currently used evaporation source 4A is in the replacement period, the needle valve body 15 of the flow rate control device 7B on the next evaporation source 4B side is sequentially fully opened, The needle valve body 15 of the flow rate control device 7A on the evaporation source 4A side is sequentially shifted to the closed state. The crucible on the evaporation source 4A side that has been stopped is cooled by a cooling means (not shown), the inside of the evaporation source 4A is gradually returned to the atmosphere, and the evaporation material is replenished to the crucible.

  Thus, by arranging at least two sets of the evaporation source 4 and the flow rate control device 7, the vapor deposition operation can be continued throughout the maintenance cycle (for example, one week) of the device, thereby improving the work efficiency. Can do.

  For example, since an organic EL vapor deposition material is very expensive and deteriorates when heated for a long time, a large amount of the vapor deposition material cannot be put into a crucible at a time and heated. In addition, a work for replenishing materials frequently (stopping the vapor deposition work) occurs frequently with only one set of evaporation source and flow rate control device, and the work efficiency is lowered. Such problems are solved, and the two evaporation sources and the flow rate control device are linked to each other, so that the evaporation rate can be maintained at the set rate even when the evaporation source is switched. Variations can be suppressed.

  By the way, in each said embodiment, although the needle valve body 15 was opened and closed with the electric motor 27 via the screw mechanism, as long as the internal sealing performance is maintained with sealing means, such as the bellows 21, The needle valve body 15 may be moved by supplying and discharging air into the cylindrical guide body 14.

  In each of the above embodiments, the configuration in which the evaporation source and the flow rate control device are connected via the flange member is illustrated. However, the evaporation source and the flow rate control device are heated to substantially the same temperature, The evaporation source and the flow rate control device may be integrated so that the upstream portion of the material transfer pipe becomes a part of the space on the evaporation source side. With such a configuration, operations such as heater installation and maintenance inspection are facilitated.

It is sectional drawing which shows schematic structure of the vapor deposition apparatus which concerns on Embodiment 1 of this invention. It is principal part sectional drawing of the flow control apparatus of the evaporation material in the vapor deposition apparatus. FIG. 3 is a DD arrow view of FIG. 2. It is a block diagram which shows the control system of the same flow control apparatus. It is principal part sectional drawing explaining the operation state in the flow control apparatus. It is a graph which shows the vapor deposition rate at the time of using the same flow control apparatus. It is sectional drawing which shows schematic structure of the vapor deposition apparatus which concerns on Embodiment 2 of this invention. It is principal part sectional drawing of the flow control apparatus of the evaporation material in the vapor deposition apparatus. It is a graph which shows the control state at the time of switching of an evaporation source by the same flow control apparatus, (a) shows a vapor deposition rate, (b) shows the opening degree of a needle valve body.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Vapor deposition apparatus 2 Glass substrate 3 Vapor deposition container 4 Evaporation source 5 Diffusion container 6 Evaporating material transfer pipe 6a Opening 7 Flow control device 11 Partition member 11b Middle vertical part 12 Opening hole 13 Flow control valve 14 Cylindrical guide body 15 needle valve body 15b conical section 16 gas supply pipe 16a gas discharge hole 17 gas on-off valve 18 opening / closing means 19 opening / closing control means 21 bellows 22 valve body heater 23 pipe heater 24 heater control means 31 vapor deposition rate setting section 32 vapor deposition rate Detection unit 33 Calculation control unit 35 Temperature detector 36 Power control unit 51 Deposition apparatus 61A Branch pipe part 61B Branch pipe part 61C Junction pipe part 71 Opening / closing control means

Claims (5)

An evaporation material flow rate control device provided in an evaporation material transfer pipe for transferring evaporation material evaporated by an evaporation source to a vapor deposition chamber,
A partition member disposed in the middle of the evaporating material transfer pipe and having a communication opening hole;
A needle valve body which is provided movably with respect to the communication opening hole and has a conical portion formed at the tip thereof capable of opening and closing the communication opening hole;
Opening and closing means for moving the needle valve body with respect to the communication opening hole and opening and closing the communication opening hole by the conical portion;
A gas discharge pipe which is inserted through the needle valve body and provided with a distal end projecting outward from the center of the conical section and having a gas ejection hole for discharging an inert gas at the distal end; and
An evaporative material flow rate control device comprising: sealing means provided between the needle valve body side and the evaporative material transfer pipe side.   The evaporative material flow rate control device according to claim 1, wherein a heater is arranged inside the tip of the needle valve body. Evaporation material transfer pipe that has one vapor deposition chamber and a plurality of evaporation sources and leads the vaporized material evaporated in each evaporation source to the vapor deposition chamber, a branch pipe section on the evaporation source side, and a confluence on the vapor deposition chamber side It consists of a pipe part,
An evaporating material flow rate control device according to claim 1 or 2 is disposed in each branch pipe portion of the evaporating material transfer pipe.   Based on the opening amount of the needle valve body of the flow rate control device that controls the flow rate of the evaporation material from the evaporation source in use, the preheating start timing of the evaporation source to be used next is obtained and the evaporation source is preheated. The vapor deposition apparatus according to claim 3, further comprising a control unit for starting. While equipped with a deposition rate detecting means for detecting the deposition film thickness on the deposition surface,
The function of controlling each flow rate control device corresponding to both evaporation sources related to the switching so that the detected vapor deposition rate detected by the vapor deposition rate detection means becomes a set value when the evaporation source is switched to the control means. The vapor deposition apparatus according to claim 4, further comprising:

Images