JP2006269969A - 電荷結合素子 - Google Patents
電荷結合素子 Download PDFInfo
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- JP2006269969A JP2006269969A JP2005089434A JP2005089434A JP2006269969A JP 2006269969 A JP2006269969 A JP 2006269969A JP 2005089434 A JP2005089434 A JP 2005089434A JP 2005089434 A JP2005089434 A JP 2005089434A JP 2006269969 A JP2006269969 A JP 2006269969A
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- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 238000001514 detection method Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 40
- 239000012535 impurity Substances 0.000 description 25
- 238000003384 imaging method Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76816—Output structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14825—Linear CCD imagers
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
【解決手段】 一導電型の半導体基板と、前記半導体基板上に一次元状に配列された複数の連続した電極からなる第1の電荷結合素子と、前記電荷結合素子の端部にて、2系統に分岐した第2の電荷結合素子と、前記2系統に分岐した第2の電荷結合素子から転送された信号を検出する検出部と、前記検出した信号を出力する出力部とを有する電荷結合素子は、前記分岐側の第2の電荷結合素子に接続する前記第1の電荷結合素子の最終電極の平面形状が、分岐境界部を境に、第1の電荷結合素子の転送方向に対し直行方向に遠くなるにしたがって、前記最終電極の転送路長が短くなることを特徴とする。
【選択図】 図6
Description
Claims (1)
- 一導電型の半導体基板と、
前記半導体基板上に一次元状に配列された複数の連続した電極からなる第1の電荷結合素子と、
前記電荷結合素子の端部にて、2系統に分岐した第2の電荷結合素子と、
前記2系統に分岐した第2の電荷結合素子から転送された信号を検出する検出部と、
前記検出した信号を出力する出力部とを有する電荷結合素子であって、
前記分岐側の第2の電荷結合素子に接続する前記第1の電荷結合素子の最終電極の平面形状が、分岐境界部を境に、第1の電荷結合素子の転送方向に対し直行方向に遠くなるにしたがって、前記最終電極の転送路長が短くなることを特徴とする電荷結合素子。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005089434A JP2006269969A (ja) | 2005-03-25 | 2005-03-25 | 電荷結合素子 |
US11/386,779 US7595517B2 (en) | 2005-03-25 | 2006-03-23 | Charge coupled device having diverged channel |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005089434A JP2006269969A (ja) | 2005-03-25 | 2005-03-25 | 電荷結合素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2006269969A true JP2006269969A (ja) | 2006-10-05 |
Family
ID=37034330
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005089434A Pending JP2006269969A (ja) | 2005-03-25 | 2005-03-25 | 電荷結合素子 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7595517B2 (ja) |
JP (1) | JP2006269969A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009021316A (ja) * | 2007-07-11 | 2009-01-29 | Brainvision Inc | 固体撮像素子の画素構造 |
JP2009277738A (ja) * | 2008-05-12 | 2009-11-26 | Brainvision Inc | 固体撮像素子の画素構造 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8106988B2 (en) * | 2007-09-06 | 2012-01-31 | Renesas Electronics Corporation | Solid imaging device |
JP2010056639A (ja) * | 2008-08-26 | 2010-03-11 | Fujifilm Corp | 電荷転送装置、電荷転送装置の駆動方法、及び撮像装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04243138A (ja) * | 1991-01-18 | 1992-08-31 | Nec Corp | Ccdリニアイメージセンサ |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05308575A (ja) | 1992-05-01 | 1993-11-19 | Sony Corp | 固体撮像素子 |
JP3980302B2 (ja) * | 2001-08-21 | 2007-09-26 | 富士フイルム株式会社 | 固体撮像装置およびその駆動方法 |
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2005
- 2005-03-25 JP JP2005089434A patent/JP2006269969A/ja active Pending
-
2006
- 2006-03-23 US US11/386,779 patent/US7595517B2/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04243138A (ja) * | 1991-01-18 | 1992-08-31 | Nec Corp | Ccdリニアイメージセンサ |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009021316A (ja) * | 2007-07-11 | 2009-01-29 | Brainvision Inc | 固体撮像素子の画素構造 |
JP2009277738A (ja) * | 2008-05-12 | 2009-11-26 | Brainvision Inc | 固体撮像素子の画素構造 |
Also Published As
Publication number | Publication date |
---|---|
US7595517B2 (en) | 2009-09-29 |
US20060214194A1 (en) | 2006-09-28 |
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