JP2006269854A - Destaticizing method for processed substrate, substrate processor, and program - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To sufficiently destaticize a processed substrate not only when processing to the processed substrate is normally ended but also even when the processing to the processed substrate is abnormally ended. <P>SOLUTION: The substrate processor executes destaticizing processing to the processed substrate, for example, a wafer W, to which prescribed processing is applied in a state of being attracted and held by a mounting stand, for example, by an electrostatic chuck 122 of a lower electrode 120, when it is detached from the electrostatic chuck 122. It is judged whether or not the prescribed processing to the wafer W before destaticizing the wafer W is normally ended. When judged that it is normally ended, destaticizing conditions are set on the basis of destaticizing condition information during the normal time from a means for storing the destaticizing condition information during the normal time. When judged that it is abnormally ended, the destaticizing conditions are set on the basis of destaticizing condition information during the abnormal time from a means for storing the destaticizing condition information during the abnormal time. The destaticizing processing for the wafer W is executed on the basis of the set destaticizing conditions. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a method of neutralizing a substrate to be processed, a substrate processing apparatus, and a program performed when the substrate to be processed is detached from a mounting table.

  In a substrate processing apparatus that performs predetermined processing such as etching and film formation on a substrate to be processed such as a semiconductor wafer or a glass substrate, for example, the substrate to be processed is carried into a processing chamber by a transfer arm and placed on a mounting table. Then, the processing such as etching is performed in the state of being sucked and held, and when the processing is completed, for example, a lift pin provided so as to be lifted and lowered is lifted to detach the substrate to be processed from the mounting table and carry it out by a transport arm or the like. It has become.

  At this time, as a jig for holding the substrate to be processed on the mounting table, for example, a DC voltage is applied to the electrode plate embedded in the dielectric member to hold the substrate to be processed by electrostatic force such as Coulomb force. Electrostatic chucks are often used. However, when the substrate to be processed is attracted by such an electrostatic chuck, charges may remain on the substrate to be processed even if the voltage applied to the electrostatic chuck is turned off after processing, and the adsorption holding force may remain. is there. Accordingly, if the substrate to be processed is detached from the mounting table with, for example, lift pins in such a state, the substrate to be processed may be broken or displaced. For this reason, before the substrate to be processed is detached, a static elimination process is performed on the substrate to be processed to weaken the electrostatic adsorption force (see, for example, Patent Documents 1 and 2).

  When performing such a charge removal process, for example, a charge removal condition (for example, an applied voltage to the electrostatic chuck, a pressure in the process chamber, a gas flow rate introduced into the process chamber) stored together with a process condition (process recipe) of the substrate to be processed. Etc.) is set by reading the parameters, and the charge removal process is executed based on the set charge removal condition.

JP-A-9-64021 JP-A-11-274141

  However, since the static elimination conditions stored in advance are usually determined on the assumption that the static elimination is performed in the state of the substrate to be processed when the processing on the substrate to be processed is normally completed, the value of each parameter is determined. Depending on the state of the substrate to be processed when the charge removal is performed, the substrate to be processed may not be sufficiently discharged.

  For example, if an abnormality occurs in the substrate processing apparatus during the process such as etching that is performed on the substrate to be processed, and the process does not end normally, the substrate to be processed may become over-adsorbed depending on the cause of the abnormality and the time for which it is left. Become. Therefore, even if neutralization of a substrate to be processed is performed in order to remove the substrate to be processed in such a state, the substrate to be processed cannot be sufficiently neutralized under the pre-stored neutralization conditions. There was a problem that a shift might occur.

  Therefore, the present invention has been made in view of such problems, and the object of the present invention is not only when the processing on the substrate to be processed is normally completed, but also when the processing on the substrate to be processed is not normally completed. Even in such a case, the present invention is to provide a substrate processing apparatus, a method for discharging a substrate to be processed, and a program capable of sufficiently discharging the substrate to be processed.

  In order to solve the above problems, according to an aspect of the present invention, a substrate to be processed that is subjected to a predetermined process while being sucked and held by a mounting table disposed in a processing chamber is removed from the mounting table. A method of neutralizing a substrate to be processed that is performed when the separation is performed, wherein before performing neutralization of the substrate to be processed, it is determined whether or not predetermined processing on the substrate to be processed has been normally completed, If it is determined, the neutralization condition is set based on the normal neutralization condition information stored in the normal neutralization condition information storage means. If it is determined that the normal termination is not completed, the normal neutralization condition information storage means is stored. A neutralization condition setting step for setting a neutralization condition based on the neutralization neutralization condition information, and a neutralization process execution step for performing a neutralization process on the substrate to be processed based on the neutralization condition set by the neutralization condition setting unit Specially Neutralization method of the substrate is provided to.

  In order to solve the above-described problems, according to another aspect of the present invention, a substrate to be processed that is subjected to a predetermined process while being sucked and held by a mounting table disposed in a processing chamber is removed from the mounting table. A substrate processing apparatus for neutralizing the substrate to be processed when it is separated, a normal neutralization condition information storage means for storing normal neutralization condition information, and an abnormal charge removal condition for storing abnormal neutralization condition information Information storage means and whether or not a predetermined process for the substrate to be processed has been normally completed before performing neutralization of the substrate to be processed. Set neutralization conditions based on normal neutralization condition information from and set neutralization conditions based on abnormal discharge conditions information from the abnormal discharge condition information storage means when it is determined that the normal termination has not been completed. Static elimination condition setting means The substrate processing apparatus, characterized in that it comprises a charge removing process execution means for executing charge elimination of the target substrate based on the neutralization conditions set by the charge removing condition setting means.

  In order to solve the above-described problem, according to another aspect of the present invention, a substrate to be processed that is subjected to predetermined processing while being sucked and held by a mounting table disposed in a processing chamber is provided from the mounting table. A program for executing charge removal processing of a substrate to be processed that is performed when the substrate is detached, and whether or not predetermined processing on the substrate to be processed has been normally completed before performing charge removal on the substrate to be processed. If it is determined that the process has been completed normally, the neutralization condition is set based on the normal-period neutralization condition information stored in the normal-period neutralization condition information storage means. The neutralization condition setting procedure for setting the neutralization condition based on the abnormal charge removal condition information stored in the normal neutralization condition information storage means, and the neutralization process execution for performing the neutralization process on the substrate to be processed based on the set neutralization condition Procedure and Program to be executed.

  In such an apparatus, method, and program according to the present invention, when the predetermined process for the substrate to be processed is normally completed, the charge removal process is executed based on the normal-time charge removal condition, and the predetermined process for the substrate to be processed is performed. Is not completed normally, the charge removal process is executed based on the non-normal charge removal condition that can be different from the normal charge removal condition. In addition to the case, the substrate to be processed can be sufficiently discharged even when the process is not completed normally. Thereby, it is possible to reliably prevent the substrate to be processed from being broken or displaced.

  In the above apparatus, method, and program, in the setting of the static elimination condition, it is determined whether or not the process has been transferred to maintenance when the process for the substrate to be processed has not been completed normally, and the process has been transferred to maintenance. Even when the maintenance is restored, the static elimination condition may be set on the basis of the abnormal-time static elimination condition information stored in the device parameter storage means. As a result, even if the substrate to be processed is in an over-adsorption state by the time it returns from maintenance, for example, the charge removal process based on the charge removal conditions under abnormal conditions is performed in this case. Can do.

  In the above apparatus, method, and program, in the execution of the static elimination process, the static elimination process execution means detects the static elimination process status, compares the detected value with an allowable limit condition, and the detected value of the static elimination process status is obtained. When the allowable limit condition is satisfied, the static elimination process is determined to be in an abnormal state, the static elimination process is stopped, and the static elimination condition is set based on the abnormal charge removal condition from the abnormal charge removal condition information storage unit. The neutralization process may be retried. As a result, for example, even if the substrate to be processed cannot be sufficiently neutralized due to an abnormality in the neutralization process, the neutralization process is retried based on the non-normal neutralization condition, so that the substrate to be processed can be sufficiently neutralized. it can.

  In the above apparatus, method, and program, the allowable limit condition has two stages: an abnormal condition that makes the static elimination process abnormal and a warning condition that is looser than the abnormal condition. When the detection value of the processing status satisfies the abnormal condition, the static elimination process is determined to be in an abnormal state and the static elimination process is stopped. When the detection value of the static elimination processing condition satisfies the warning condition, the static elimination process May be determined to be in a warning state and the warning process may be performed. Since the operator can be notified of the fact that the neutralization process is in a warning state by a warning process or the like, the operator can predict in advance that the neutralization process may be in an abnormal state.

  In the above apparatus, method, and program, in the execution of the neutralization process, after the neutralization process of the substrate to be processed is completed, a determination is made as to whether or not to retry the neutralization process, and the retry of the neutralization process is selected. In such a case, the neutralization condition may be set based on the abnormal charge removal condition information from the abnormal discharge condition information storage unit. Thus, the charge removal process can be retried in accordance with the state of the substrate to be processed, so that the substrate to be processed can be discharged more reliably.

  In the above-described apparatus, method, and program, the abnormal-state static elimination condition information can be edited by, for example, input means. As a result, the operator can set the neutralization condition according to the state of the substrate to be processed at the timing of performing the neutralization process based on the non-normal neutralization condition information, so that the substrate to be processed can be efficiently and sufficiently neutralized.

  In the above-described apparatus, method, and program, the non-normal charge removal condition information may have more editable charge removal condition parameters than the normal charge removal condition information. This is because the charge removal process based on the non-normal charge removal condition information includes a process in the case where some abnormality occurs, so that finer settings than the normal charge removal condition information 284 can be made. As a result, the neutralization conditions can be set in detail according to the state of the substrate to be processed when performing the neutralization process, so that the substrate to be processed can be more sufficiently neutralized.

  In the above-described apparatus, method, and program, in the charge removal process executed based on the charge removal condition set based on the information on the charge removal condition in the abnormal state, a vacuum is drawn between the back surface of the substrate to be processed and the mounting table. You may make it include the process to perform. This is for preventing the substrate to be processed from jumping up when being detached from the mounting table.

  In the above apparatus, method, and program, the static elimination process includes a process of repeatedly reversing the polarity of the voltage applied to the electrostatic adsorption means for electrostatically adsorbing the object to be mounted on a mounting table disposed in the processing chamber. You may make it. Thereby, the substrate to be processed can be discharged more reliably.

  In the above-described apparatus, method, and program, the information on the condition for neutralizing static electricity includes at least the applied voltage to the electrostatic chuck, the pressure in the processing chamber, and the gas flow rates from a plurality of gas lines that supply the processing gas into the processing chamber. These parameters may be included. As a result, even if an abnormality occurs in a certain gas line during the charge removal process and a predetermined flow rate of process gas required for the charge removal process cannot be supplied from that gas line, the process gas from the other gas lines can be supplied. Thus, it is possible to edit the non-normal charge removal condition information so that the total flow of each gas becomes the predetermined flow required for the charge removal process.

  According to the present invention, the substrate to be processed can be sufficiently discharged not only when the processing on the substrate to be processed is normally completed but also when the processing on the substrate to be processed is not normally completed. Thereby, it is possible to reliably prevent the substrate to be processed from being broken or displaced.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the present specification and drawings, components having substantially the same functional configuration are denoted by the same reference numerals, and redundant description is omitted.

(Configuration example of substrate processing equipment)
First, a configuration example of a substrate processing apparatus according to the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view illustrating a configuration example of a substrate processing apparatus according to the present embodiment. The substrate processing apparatus 100 is configured as a plasma processing apparatus that performs an etching process or the like on a substrate to be processed.

  As shown in FIG. 1, the substrate processing apparatus 100 includes a processing chamber (chamber) 102 made of a conductive material such as aluminum. The processing chamber 102 includes a processing container including, for example, a container main body 103 having an opening in the upper part and a cover (lid) 104 that closes the opening of the container main body 103. The cover 104 is detachably attached to the container main body 103 by a fastening member such as a bolt. A seal member (not shown) such as an O-ring is interposed between the cover 104 and the container main body 103. Thereby, higher airtightness is ensured between the cover 104 and the container main body 103. The processing chamber 102 is grounded for safety.

  In the processing chamber 102, a disk-like lower electrode (susceptor) 120 that also serves as a mounting table on which a substrate to be processed, for example, a semiconductor wafer (hereinafter also simply referred to as “wafer”) W is mounted, and the lower electrode 120. And an upper electrode 140 also serving as a shower head for introducing processing gas, purge gas, and the like.

  A first high-frequency power source 162 is connected to the lower electrode 120 via a matching unit 164, and a second high-frequency power source 172 having a higher frequency than the first high-frequency power source 162 is connected to the upper electrode 140 via a matching unit 174. Yes. The lower electrode 120 is connected to a high-pass filter (HPF) 166 that filters high-frequency current flowing into the lower electrode 120 from the second high-frequency power source 172, and the upper electrode 140 is connected to the upper electrode from the first high-frequency power source 162. A low pass filter (LPF) 176 for filtering high frequency current flowing into the electrode 140 is connected.

  A processing gas supply unit 142 that supplies a gas necessary for processing in the processing chamber 102 is connected to the upper electrode 140 through a gas introduction pipe. The processing gas supply unit 142, for example, a gas supply source for supplying a processing gas or a purge gas necessary for wafer processing in the processing chamber 102 or a cleaning process in the processing chamber 102, and introduction of gas from the gas supply source. It is comprised from the several gas line which has the valve | bulb and mass flow controller which control.

  The processing gas supply unit 142 includes a plurality of gas lines configured to be selectable based on a control signal from the control unit 200, for example. For example, different types of processing gas can be supplied by different gas lines, and the same type of processing gas can also be supplied by a plurality of gas lines. According to this, even if an abnormality occurs in one of the gas lines, the same processing gas can be supplied from another gas line. In addition, since a processing gas having a flow rate that cannot be supplied by only one gas line can be supplied by a plurality of gas lines, a processing gas having a necessary flow rate can be supplied.

  An exhaust port 180 is provided on the bottom surface of the processing chamber 102. An exhaust device 182 that exhausts the inside of the processing chamber 102 is connected to the exhaust port 180 via an exhaust pipe. The exhaust device 182 includes, for example, a vacuum pump, and can reduce the pressure in the processing chamber 102 to a predetermined degree of vacuum.

  The lower electrode 120 is provided with an electrostatic chuck 122 for holding the wafer W with an electrostatic attraction force. The electrostatic chuck 122 is configured by sandwiching an electrostatic chuck electrode 124 made of, for example, a conductive film in an insulating film. A DC power source 125 capable of switching between positive voltage application and negative voltage application is electrically connected to the electrostatic chuck electrode 124 via a variable resistor 126 and a switch 127.

  According to the electrostatic chuck 122 configured as described above, the switch 127 is connected to the terminal 128 and a positive voltage is applied from the DC power source 125, whereby the wafer W is attracted and held on the electrostatic chuck 122 by Coulomb force. can do. In addition, since the switch 127 is connected to the terminal 129 and a negative voltage is applied from the DC power supply 125, a voltage having a polarity opposite to that at the time of electrostatic adsorption is applied, so that the substrate to be processed can be discharged. Further, by adjusting the voltage applied from the DC power supply 125 by the variable resistor 126, the suction holding force of the wafer W can be adjusted. The polarity at the time of electrostatic adsorption and the polarity at the time of static elimination are not limited to the above case, and may be reversed depending on the configuration of the electrostatic chuck 122.

  The lower electrode 120 includes a detaching means (not shown) for separating the wafer W from the upper surface of the electrostatic chuck 122. For example, a plurality of (for example, four) lift pins (which may also be referred to as lifter pins or support pins) are attached to the elevating member so as to be detached from the lower electrode 120 by extending vertically from the upper surface of the electrostatic chuck 122. Configured. The lift pin is configured to be lifted and lowered via a lifting member by a drive mechanism such as an air cylinder or a ball screw mechanism, and the tip of the lift pin is connected to, for example, a hole formed in the lower electrode 120 according to the lifting and lowering of the lift pin. The wafer W can be detached from the surface of the electrostatic chuck 122 by protruding from the surface of the electrostatic chuck 122.

  A focus ring 132 is disposed on the upper surface edge of the electrostatic chuck 122 so as to surround the outer periphery of the wafer W. Further, a cover ring 134 is disposed on the upper surface edge of the lower electrode 120 so as to surround the electrostatic chuck 122 and the focus ring 132. The focus ring 132 and the cover ring 134 collect plasma on the wafer W. Note that the focus ring 132 and the cover ring 134 are not necessarily configured separately, and may be configured integrally.

  A cooling mechanism is provided inside the lower electrode 120. This cooling mechanism is configured to circulate and supply a coolant (for example, cooling water) at a predetermined temperature from the chiller unit 138 to a coolant chamber 136 extending in the circumferential direction in the lower electrode 120 via a pipe, for example. . The processing temperature of the wafer W on the electrostatic chuck 122 can be controlled by the temperature of the coolant.

  Further, a heat transfer gas (cooling gas, back gas) such as He gas from the heat transfer gas supply unit 139 is supplied between the upper surface of the electrostatic chuck 122 and the back surface of the wafer W via a gas supply line. The Thereby, heat transfer between the lower electrode 120 and the wafer W is promoted. The heat transfer gas supply unit 139 is configured to be able to evacuate between the upper surface of the electrostatic chuck 122 and the rear surface of the wafer W. Thereby, the pressure adjustment of the upper surface of the electrostatic chuck 122 and the back surface of the wafer W is possible.

  An aluminum bellows 105 is interposed between the lower surface of the lower electrode 120 and the bottom surface of the processing chamber 102. The lower electrode 120 is provided with an elevating mechanism (not shown). By elevating the lower electrode 120 by this elevating mechanism, a gap with the upper electrode 140 can be set as appropriate according to the processing on the wafer W. ing. A gate valve 106 that opens and closes the loading / unloading port for the wafer W is attached to the side wall of the processing chamber.

  The upper electrode 140 also serving as a shower head includes a lower electrode plate 144 having a large number of gas vent holes 145 and an electrode support 146 that detachably supports the electrode plate 144. The electrode plate 144 is made of, for example, a silicon material, and the electrode support 146 is made of, for example, an aluminum material. A buffer chamber 147 is formed in the electrode support 146, and the processing gas supply unit 142 is connected to a gas inlet of the buffer chamber 147 through a gas inlet pipe.

  An insulating member 148 is attached to the upper electrode 140 so as to surround the outer periphery thereof, and is insulated from the processing chamber 102. The lower surface of the insulating member 148 and the lower surface of the electrode plate 144 are flush with each other, and a shield ring 150 is attached to the lower surface of the insulating member 148 and the lower surface edge of the electrode plate 144. The shield ring 150 is made of an inorganic oxide such as quartz or alumina. The shield ring 150 is not necessarily configured separately from the insulating member 148, and may be configured integrally to serve as the insulating member.

  The substrate processing apparatus 100 includes a control unit 200 that controls each unit. The control unit 200 includes, for example, first and second high-frequency power sources 162 and 172, matching units 164 and 174, a processing gas supply unit 142, an exhaust device 182, a switch 127 for the electrostatic chuck 122, a variable resistor 126, a chiller unit 138, It is connected to the heat transfer gas supply unit 139 and the like.

  The substrate processing apparatus 100 is provided with various sensors (not shown). Various sensors include an electric sensor for measuring the applied voltage of the upper electrode 140 and the lower electrode 120, the applied voltage of the electrostatic chuck 122, the flow rate of the processing gas by the processing gas supply unit 142, and the heat transfer by the heat transfer gas supply unit 139. Examples thereof include a gas flow rate sensor that detects a gas flow rate, and a temperature sensor that detects temperatures of the upper electrode 140 and the lower electrode 120. The various sensors also include a plasma emission spectrometer (not shown) attached via a transparent window provided on the side wall of the processing chamber 11. The plasma emission spectroscope 31 detects a change in the state of the plasma by dispersing the plasma with a specific wavelength, or detects the end point of etching based on the change in the intensity of the plasma with the specific wavelength. These various sensors are connected to the control unit 200.

  The control unit 200 detects the state of processing (wafer processing) on a wafer such as etching and the state of charge removal processing described later via various sensors such as the electric sensor, gas flow rate sensor, temperature sensor, and plasma emission spectrometer as described above. Then, based on these detection values, the processing gas supply unit 142, the exhaust device 182, the heat transfer gas supply unit 139 and the like are controlled to perform processing. Then, based on detection values of various sensors, it is determined whether or not a wafer process or a charge removal process, which will be described later, is normally executed. If an abnormality such as a failure of the substrate processing apparatus 100 or a process abnormality is detected, an alarm is generated. The notification means 260 is driven to notify the operator (interlock process).

(Configuration example of control unit)
Next, a configuration example of the control unit as described above will be described with reference to FIG. As shown in FIG. 2, the control unit 200 includes a CPU (central processing unit) 210 constituting the control unit main body, program data for the CPU 210 to control each unit (for example, predetermined processing for the wafer W, static elimination processing for the wafer W). RAM (Random Access Memory) 230 provided with ROM (Read Only Memory) 220 storing program data for executing data etc., and a memory area used for various data processing performed by CPU 210 Is provided.

  In addition, the control unit 200 includes a display unit 240 configured by a liquid crystal display for displaying an operation screen, a selection screen, and the like, an input unit that can input various data by an operation of the operator such as a keyboard and a touch panel, and an operation by the operator. Input / output means 250 having an output means capable of outputting various data to a printer, an external storage device, etc., an informing means 260 comprising, for example, an alarm device such as a buzzer, etc. 142, a heat transfer gas supply unit 139, a switch 127 for the electrostatic chuck 122, etc.), a recipe parameter storage unit 280 as an example of a normal charge removal condition information storage unit, an abnormal charge removal Device parameter storage means 290 as an example of condition information storage means Provided.

  The CPU 210, the ROM 220, the RAM 230, the display means 240, the input / output means 250, the notification means 260, the various controllers 270, the recipe parameter storage means 280, and the apparatus parameter storage means 290 are bus lines such as a control bus, a system bus, and a data bus. Are electrically connected.

  The various controllers 270 include, for example, first and second high-frequency power sources 162, 172, matching units 164, 174, processing gas supply unit 142, exhaust device 182, switch 127 for electrostatic chuck 122, variable resistor 126, chiller unit 138. , A controller for controlling the heat transfer gas supply unit 139 and the like is included.

  The recipe parameter storage unit 280 mainly stores information that is referred to when, for example, processing on the wafer W by the substrate processing apparatus 100 is automatically executed, whereas the apparatus parameter storage unit 290 mainly includes For example, information to be referred to when processing by the substrate processing apparatus 100 is stopped and various settings or maintenance processing of the substrate processing apparatus 100 is performed by the operator is stored.

  In the present embodiment, when a predetermined process such as etching on the wafer W (hereinafter also referred to as “wafer process”) is continuously executed, the normal charge removal condition information 284 that is executed when the wafer process ends normally. Is stored in the recipe parameter storage unit 280, and the non-normal charge removal condition information 294 that is executed when the wafer processing is not normally completed is stored in the apparatus parameter storage unit 290. As a result, when the wafer process is normally completed, the charge removal process can be automatically executed after the wafer process is completed, so that the throughput of the process can be improved. On the other hand, for example, when some abnormality has occurred and the wafer processing has not ended normally, for example, when it becomes necessary to stop the wafer processing and remove the wafer W, depending on the cause of the abnormality and the time for which the wafer is left. Since an optimal charge removal condition can be set according to the state of different wafers W, the wafer W can be discharged sufficiently.

  Hereinafter, information stored in the recipe parameter storage unit 280 and the apparatus parameter storage unit 290 will be described. The recipe parameter storage unit 280 stores wafer processing condition (processing recipe) information 282 and normal charge removal condition (charge removal recipe) information 284. The wafer processing condition information 282 is a condition for controlling each part of the substrate processing apparatus 100 to perform wafer processing in the processing chamber 102. For example, as shown in FIG. 3, the wafer processing condition information 282 includes a plurality of parameters such as the processing chamber voltage, the type and flow rate of the processing gas, and the high frequency voltage applied to the upper electrode and the lower electrode.

The normal charge removal condition information 284 is a condition for controlling each part of the substrate processing apparatus 100 in the charge removal process executed when the wafer process based on the wafer process condition information 282 is normally completed. Therefore, it is sufficient for the normal-time charge removal condition information 284 to determine the value of each parameter so that sufficient charge removal can be performed in the state of the wafer W when the wafer processing is normally completed. For example, as shown in FIG. 4, the normal-time static elimination condition information 284 includes a plurality of parameters such as an electrostatic chuck applied voltage, a gas flow rate of the processing gas, and a pressure in the processing chamber. The voltage applied to the electrostatic chuck is a voltage applied to the electrostatic chuck 122, and is, for example, a voltage having a reverse polarity to that during electrostatic adsorption. The gas flow rate of the process gas is the gas flow rate of the process gas supplied from the process gas supply unit 142, for example, N ₂ gas. The pressure in the processing chamber is the pressure in the processing chamber 102 and is adjusted, for example, by controlling the introduction of the processing gas and the exhaust amount in the processing chamber 102.

  Note that each parameter of the static elimination condition in the normal static elimination condition information 284 may be editable by operating the input / output means 250 by an operator, for example. For example, if the wafer processing conditions are changed before the wafer processing is executed, it may be necessary to change the static elimination conditions accordingly.

  The apparatus parameter storage unit 290 stores charge removal processing allowable limit condition information 292 and non-normal charge removal condition (charge removal recipe) information 294. As shown in FIG. 5, the permissible limit condition information 292 for the static elimination process stores the permissible limit condition for chucking whether or not the static elimination process is normally executed during the neutralization process.

  The permissible limit condition can be set in multiple stages for all or some of the parameters of the static elimination condition. In the permissible limit condition information 292 shown in FIG. 5, for example, permissible limit conditions 1 and 2 are set for each parameter such as electrostatic chuck applied voltage, gas flow rate, and processing chamber pressure. These allowable limit conditions can be set to arbitrary values by the input / output means 250.

  The permissible limit condition 2 is a permissible limit condition that causes an abnormal state in which the detection value of each sensor deviates from the set value of the static elimination condition to such an extent that the static elimination condition parameter cannot continue the static elimination processing, for example. The permissible limit condition 1 is a permissible limit condition that causes a warning state in which the parameter of the static elimination condition is not, for example, not able to continue the static elimination process, but deviates from the set value of the parameter of the static elimination condition to some extent. Also set a loose tolerance limit condition.

  The permissible limit condition may be set in one stage of only the permissible limit condition 2 at which the neutralization process becomes an abnormal state. However, the permissible limit condition at which the neutralization process becomes an abnormal state by using two stages as described above. Before the condition 2 is reached, the allowable limit condition 1 at which the static elimination process always enters a warning state is reached. Therefore, when the static elimination process is in the warning state, the operator is notified by the warning process described later that the static elimination process is in the warning state. Since the notification can be made, the operator can predict in advance that there is a possibility that the charge removal process will be in an abnormal state.

  In addition, depending on the state of the substrate processing apparatus 100 during the charge removal process, the surrounding environment, and the like, the detection value by each sensor for the parameter of the charge removal condition may vary. For this reason, even if the permissible limit condition is temporarily satisfied, there is a case where it immediately returns to the predetermined range and there is no problem in the static elimination process itself. Therefore, as shown in FIG. 6, the permissible limit condition is only a range that shows a degree (for example, a ratio to the set value of each parameter) that is far from the set value of each parameter of the static elimination condition for each permissible limit condition 1 and 2. In addition, the time that exceeds this range can now be set. As a result, even if the value of each parameter fluctuates slightly and temporarily exceeds the range of the allowable limit condition, it is not determined as abnormal unless the state continues for a set time or longer. By doing so, it is possible to determine that an abnormal state occurs when a real abnormality occurs during the charge removal process.

  In this embodiment, the permissible limit condition information 292 for use in the interlock process of the static elimination process has been described. However, the permissible limit condition information regarding the interlock process of a predetermined process such as an etching process on the wafer W is also permitted. It may be configured in the same manner as the limit condition information 292 and stored in, for example, the apparatus parameter storage means. As a result, it is possible to determine whether or not the processing for the wafer W is normal, as in the case of the charge removal processing.

  The non-normal charge removal condition information 294 is a condition for controlling each part of the substrate processing apparatus 100 in the charge removal process executed when the wafer process based on the wafer process condition information 282 is not normally completed. If the wafer processing is not completed normally, as will be described later, for example, the wafer processing is stopped halfway by the operator regardless of whether or not an abnormality has occurred, not only when some abnormality occurs and the wafer processing is stopped halfway. This is also included.

  Each parameter of the static elimination condition in the abnormal charge elimination condition information 294 can be edited by operating the input / output means 250 by an operator, for example. As a result, the operator can set the charge removal condition according to the state of the wafer W at the timing of performing the charge removal process based on the non-normal charge removal condition information 294, so that the wafer W can be discharged efficiently and sufficiently.

  In addition, the number of parameters that can be edited for the static elimination condition in the abnormal charge removal condition information 294 is greater than the number of parameters for the static elimination condition in the normal charge removal condition information 284. For example, in the non-normal charge removal condition information 294, the time for adjusting the pressure in the processing chamber 102 and the time for applying a voltage to the electrostatic chuck 122 can be edited. This is because the charge removal process based on the non-normal charge removal condition information 294 includes a process in the case where some abnormality occurs, so that finer settings than the normal charge removal condition information 284 can be made. As a result, the neutralization conditions can be finely set according to the state of the wafer W when performing the neutralization process, so that the wafer W can be sufficiently neutralized.

  In addition, the default value of each parameter of the static elimination condition in the abnormal charge removal condition information 294 may be set to the same value as the normal charge removal condition information 284. Even when the wafer processing is not normally completed, for example, when the state of the wafer W is hardly different from the case of the normal processing completion, for example, when the leaving time is short, the wafer W can be sufficiently removed even under the same conditions as the normal discharging conditions. This is because the charge can be removed. In addition, it is also possible to first try to execute the charge removal process under the same conditions as the normal charge removal conditions, edit the non-normal charge removal condition information 294 while looking at the state of the wafer W, and retry the charge removal.

  In addition, the default values of each parameter of the static elimination condition in the abnormal charge elimination condition information 294 may be all set to zero. Thereby, it is possible to save the trouble of changing the default value at the time of shipment of the non-normal charge removal condition information 294 for each substrate processing apparatus 100. In other words, the non-normal time neutralization condition information 294 that can be set varies depending on the configuration of the substrate processing apparatus 100 (for example, the number of gas lines of the processing gas supply unit 142 and the maximum gas flow rate that can be supplied by the gas line). When the default value of each parameter of the charge removal condition in the charge removal condition information 294 is not set to 0, it is necessary to change the default value at the time of shipment of the charge removal condition information 294 at the time of abnormal for each substrate processing apparatus 100. Even in such a case, it is not necessary to change the default value at the time of shipping of the non-normal charge removal condition information 294 for each substrate processing apparatus 100.

  If the default values of each parameter of the static elimination condition in the abnormal charge removal condition information 294 are all set to 0 as described above, it is necessary to edit the abnormal charge removal condition information 294 before executing the static elimination process. . However, even if you forget to edit the charge removal condition in the abnormal charge removal condition information 294 and the charge removal process is executed, the charge removal process will not be executed normally if all the parameters of the charge removal condition remain 0. In such a state, the wafer W is not detached from the electrostatic chuck 122 by lift pins, for example.

  Further, in the present embodiment, the case has been described in which the non-normal-time static elimination condition information 294 is stored in the apparatus parameter storage unit 290, but is not necessarily limited thereto, and is stored in the recipe parameter storage unit 280. If neutralization neutralization condition information 294 is necessary in the neutralization process described later, the neutralization condition may be set by reading from the recipe parameter storage unit 280.

  For example, as shown in FIG. 6, the non-normal charge removal condition information 294 includes an electrostatic chuck application voltage, a voltage application time applied to the electrostatic chuck, a process chamber pressure, a pressure adjustment time, etc. It has parameters such as the gas flow rate of the processing gas for each gas line.

Each gas line of the processing gas supply unit 142 may store parameters for all gas lines of the substrate processing apparatus 100, or may store parameters for some of the gas lines. Also good. Further, it may be possible to set only a gas line that supplies a processing gas (for example, N ₂ gas or inert gas) necessary for the charge removal process. As a result, even when an abnormality occurs in a certain gas line during execution of the charge removal process and the process gas at a predetermined flow rate required for the charge removal process cannot be supplied from that gas line, the process gas from the other gas lines can be supplied. Thus, it is possible to edit the non-normal charge removal condition information 294 so that the total flow of each gas becomes the predetermined flow required for the charge removal process.

  When the control unit 200 having such a configuration controls each part of the substrate processing apparatus 100 to perform, for example, an etching process as a wafer process, the wafer W is carried into the process chamber 102 by a transfer arm or the like, and also serves as a mounting table. The wafer W is placed on the lower electrode 120 and the wafer W is electrostatically attracted by the electrostatic chuck 122. Then, a predetermined processing gas is introduced into the processing chamber 102 by the processing gas supply unit 142, and the processing chamber 102 is exhausted by the exhaust device 182, thereby obtaining a predetermined degree of vacuum.

  In this manner, while maintaining a predetermined degree of vacuum, for example, a first high frequency power of 2 MHz is applied from the first high frequency power supply 162 to the lower electrode 120, and a second frequency of 60 MHz, for example, is applied from the second high frequency power supply 172 to the upper electrode 140. By applying the high frequency power, plasma of a processing gas is generated between the lower electrode 120 and the upper electrode 140 by the action of the second high frequency power, and a self-bias potential is applied to the lower electrode 120 by the action of the first high frequency power. appear. Thereby, for example, plasma processing such as reactive ion etching can be performed on the wafer W on the lower electrode 120. The controller 200 detects an abnormality based on the detection values from the various sensors during execution of such wafer processing, and checks whether or not an abnormality has occurred (interlock process).

  When the process of the wafer W is normally completed without detecting any abnormality, the wafer W is neutralized, for example, the lift pin is pushed up to detach the wafer W from the electrostatic chuck 122, and the transfer arm It is carried out from the processing chamber 102 by such as. As the charge removal condition in this case, it is sufficient to perform the charge removal process based on the charge removal condition determined in advance assuming the state of the wafer W when the wafer process is normally completed.

  However, if the wafer processing has not been completed normally, the wafer W may be over-adsorbed depending on the cause of the abnormality and the standing time. When the wafer processing is not completed normally, for example, when the wafer processing is stopped due to a failure of the substrate processing apparatus 100, power failure, electric leakage, process abnormality, etc. during execution of the wafer processing, the process proceeds to maintenance. This is the case when the substrate processing apparatus is restarted and restored after the cause of the abnormality is removed.

  In such a case, for example, it takes a long time to recover from the abnormal state or the wafer W is left with the wafer W adsorbed. Therefore, the wafer process is normal when performing the static elimination process. It becomes over-adsorbed than when it is finished. Therefore, even if the wafer W is neutralized under the same neutralization conditions as described above to detach the wafer W from the electrostatic chuck 122 in such a state, the wafer W cannot be sufficiently neutralized. For this reason, when the lift pins are pushed up and the wafer W is detached from the electrostatic chuck 122, the wafer W is broken or the wafer W is displaced when the wafer W is unloaded by the transfer arm. was there.

  Therefore, in the present invention, each parameter of the static elimination condition can be edited in addition to the normal static elimination condition in which the value of each parameter is determined on the assumption that the static elimination is performed in the state of the wafer W when the wafer processing is normally completed. If there is an abnormal charge removal condition, the charge removal process is executed based on the normal charge removal condition when the wafer process is completed normally. If the wafer process is not completed normally, the charge removal process is performed based on the abnormal charge removal condition. Execute. As a result, the charge removal process can be executed under a charge removal condition different from the normal charge removal condition, so that the wafer W can be sufficiently discharged even when the wafer process is not completed normally. Therefore, it is possible to reliably prevent the wafer W from being broken or displaced.

(Specific example of wafer neutralization)
Here, a specific example of the wafer static elimination process according to the present embodiment as described above will be described. FIG. 7 is a flowchart showing a specific example of the wafer static elimination process. As shown in FIG. 7, the neutralization conditions are set according to the state of the wafer W at step S100 (static neutralization condition setting means, neutralization condition setting process, neutralization condition setting stage), and the neutralization conditions set at step S200. Then, the neutralization process of the wafer W is performed (the neutralization process execution means, the neutralization process execution step, the neutralization process execution stage).

  First, a specific example of the setting of static elimination conditions (step S100) will be described. The neutralization condition is set by a subroutine as shown in FIG. 8, for example. In step S110, it is determined whether or not the wafer processing is normally completed. Specifically, whether or not an abnormality has occurred during the execution of the wafer processing is checked by the interlock processing of the control unit 200 as described above. It is determined that the processing has ended normally. Further, when the wafer processing is stopped due to, for example, a failure of the substrate processing apparatus 100, power failure, electric leakage, process abnormality or the like during the wafer processing, it is determined that the wafer processing is not completed normally. Here, regardless of whether or not an abnormality has occurred, even when the wafer processing is stopped by the input / output means 250 of the operator, it is determined that the wafer processing has not ended normally.

  If it is determined in step S110 that the wafer processing has been completed normally, the normal-time neutralization condition information is set as the neutralization condition in step S160, and the process returns to the main routine shown in FIG. 7 and proceeds to the process in step S200. This is because, when the wafer processing is normally completed, sufficient neutralization can be performed by the neutralization processing based on the normal neutralization condition information 284. More specifically, the normal-time static elimination condition information 284 is read from the recipe parameter storage unit 280, and each parameter is set as a static elimination condition for the static elimination process to be executed.

  If it is determined in step S110 that the wafer processing has not ended normally, it is determined whether or not to shift to maintenance. As described above, when an abnormality occurs during execution of wafer processing, it is notified by a notification means such as an alarm. In this case, the operator can shift to a maintenance process in order to remove the cause of the abnormality or repair each part. Whether or not the shift to the maintenance process has been performed may be determined based on whether or not the shift to the maintenance is selected on the selection screen displayed on the display unit 240, for example.

  If it is determined in step S120 to shift to maintenance, it is determined in step S130 whether or not the maintenance has been restored, and the process waits until the maintenance is restored.

  If it is determined in step S120 that the maintenance process is not to be performed, it is determined in step S140 whether or not to retry the wafer processing. When an abnormality occurs during execution of wafer processing and the like is notified by an alarm or other notification means, for example, the wafer processing is retried or the wafer processing is stopped in addition to the transition to the above-described maintenance. This can be selected by the operator on the selection screen displayed on the display means 240. Here, the retry of the wafer W includes not only the case where the wafer processing is executed from the beginning under the same processing conditions but also the case where the remaining processing is executed.

  If it is determined in step S140 that the wafer processing is retried, the wafer processing is retried under the same processing conditions, and in step S150, it is determined whether or not the wafer processing is normally completed. The process of step S150 is the same as the process of step S110.

  If it is determined in step S150 that the wafer processing has not ended normally, the process returns to step S120. If it is determined in step S150 that the wafer processing has been normally completed, the normal-time static elimination conditions are set as the static elimination conditions in step S160. This is because, even when the wafer processing is retried and completed normally, the wafer W can be discharged under the same discharging conditions as in the normal state.

  On the other hand, if it is determined in step S130 that the maintenance has been resumed, and if it is determined in step S140 that the wafer processing is not retried (for example, if it is determined that the wafer processing is to be stopped), the steps described later are performed. The process proceeds to S170 and subsequent steps, the non-normal-time charge removal condition is set as the charge removal condition, the process returns to the main routine shown in FIG. 7, and the process moves to step S200. This is because, when returning from such maintenance or stopping wafer processing, the wafer W may not be sufficiently discharged under normal charge removal conditions due to the excessive adsorption state of the wafer W.

  In step S170, it is determined whether or not the abnormal charge removal condition is to be edited. This is because it is possible to edit the non-normal charge removal condition before executing the charge removal process. As a result, the operator can freely edit the charge removal condition at the time of non-normality while confirming the state of the wafer W or based on past experience.

  If it is determined in step S170 that the abnormal charge removal conditions are to be edited, the process waits for the completion of the abnormal charge removal conditions in step S180. If it is determined in step S180 that the editing of the abnormal charge removal condition has been completed, the abnormal discharge condition information 294 in the apparatus parameter storage unit 290 is updated to store the edited abnormal discharge condition. In S190, the non-normal charge removal condition after editing is set as the charge removal condition. More specifically, the updated abnormal-condition static elimination condition information 294 is read from the apparatus parameter storage unit 290, and each parameter is set as a static elimination condition for the static elimination process to be executed.

  If it is determined in step S170 that the abnormal charge removal condition is not to be edited, the abnormal discharge condition is set as the charge removal condition in step S190. In this case, for example, the default value of each parameter of the non-normal charge removal condition is set as the charge removal condition. Further, if the device parameter storage means 290 is configured by a hard disk, a non-volatile memory, etc., if the abnormal discharge conditions are edited in the past, the abnormal discharge conditions after the editing are already stored. Such an abnormal charge removal condition edited in the past may be set as the charge removal condition as it is.

  Next, a specific example of the charge removal process (step S200) will be described. The neutralization process is executed by a subroutine as shown in FIG. 9, for example. That is, the charge removal process is executed under the charge removal conditions set in step S210. More specifically, if the normal neutralization condition parameter is set as the neutralization condition by setting the neutralization condition (step S100), the neutralization process is performed based on the normal neutralization condition parameter, and the abnormal neutralization condition is set. If the parameter is set as the static elimination condition, the static elimination process is executed based on the parameter of the abnormal charge elimination condition.

The neutralization process is executed as follows, for example. First, a processing gas, for example N ₂ gas, is introduced into the processing chamber 102 from a predetermined gas line of the processing gas supply unit 142 at a gas flow rate set to a static elimination condition, and evacuation is performed by an exhaust device, thereby processing chamber 102. Adjust the pressure so that the pressure inside is set to the static elimination conditions.

  At this time, in the case of the charge removal process under the non-normal charge removal condition, the heat transfer gas supply unit 139 is controlled to evacuate the upper surface of the electrostatic chuck 122 and the back surface of the wafer W. This is to prevent the wafer W from jumping up when being detached from the electrostatic chuck. That is, when the back surface pressure of the wafer W becomes higher than the processing chamber pressure, the heat transfer gas remaining between the back surface of the wafer W and the electrostatic chuck 122 is ejected due to the pressure difference between the processing chamber pressure and the wafer W. This causes inconveniences such as jumping on the electrostatic chuck 122 and causing the wafer W to be displaced, or deposits on the edge of the wafer W to rise into the processing chamber 102 and adhere to the wafer W. This is to prevent it.

  In particular, in the case of the charge removal process under the non-normal charge removal condition, since the wafer process is not normally completed due to the occurrence of an abnormality, the state of the back surface of the wafer W cannot be predicted depending on the cause of the abnormality. There is also a high probability that the back surface pressure is higher than the processing chamber pressure. Therefore, in the case of the charge removal process under the charge removal condition under abnormal conditions, it is preferable to evacuate the back surface of the wafer W for the purpose of surely preventing the wafer W from jumping up. In this regard, in the case of the charge removal process under the normal charge removal condition, the pressure on the back surface of the wafer W and the pressure in the processing chamber can be known. Therefore, the back surface of the wafer W may be evacuated as necessary.

  When the pressure in the processing chamber 102 is set to the static elimination condition, the switch 127 is switched while the pressure is maintained, and the electrostatic chuck 122 is switched to a voltage (reverse applied voltage) having a polarity opposite to that at the time of electrostatic adsorption, for example. Is applied. At this time, the voltage value applied to the electrostatic chuck 122 is set to a voltage value set in the static elimination condition. When a predetermined time elapses in this state, the reverse applied voltage to the electrostatic chuck 122 is turned off, the introduction of the processing gas is turned off, and the pressure control in the processing chamber 102 is stopped.

  In addition, as a control process of the electrostatic chuck 122 in the static elimination process, the voltage value applied to the electrostatic chuck 122 as described above is not limited to the process of setting the voltage value set in the static elimination condition. For example, the switching of the switch 127 of the electrostatic chuck 122 may be performed so that the voltage value set in the static elimination condition is applied to the electrostatic chuck 122 by repeatedly reversing its polarity.

  In step S220, it is determined whether or not the charge removal process is normally executed. During the charge removal process, an interlock process is performed, and it is determined whether, for example, a failure of the substrate processing apparatus 100, a power failure, a leakage, an abnormality in the charge removal process, or the like has occurred. Among these, regarding static electricity removal processing abnormalities, for example, the values detected by each sensor such as an electric sensor, gas flow rate sensor, and pressure sensor are monitored for parameters of static electricity removal conditions such as electrostatic chuck applied voltage, gas flow rate, and processing chamber pressure. On the basis of the allowable limit condition information 292 as shown in FIG.

  Such an interlock process of the charge removal process is executed as follows, for example. When the detected value by each sensor for the parameter of the static elimination condition satisfies the allowable limit condition 1 and does not satisfy the allowable limit condition 2, the alarm is notified by the notification means 260 and a warning is displayed on the display means 240. A warning process (warning process) is performed. In this case, for example, the number of times that the permissible limit condition 1 is satisfied is stored as, for example, the permissible limit condition information 292 as the charge removal processing status.

  Further, when the detection value by each sensor regarding the parameter of the charge removal condition satisfies the allowable limit condition 2, the warning means 260 notifies the alarm, and displays the occurrence of abnormality on the display means 240 to perform the charge removal process. Stop.

  If it is determined in step S220 that the charge removal process is normal, for example, if the detection value from each sensor does not satisfy the allowable limit condition 2 in the interlock process, is the charge removal process completed in step S230? If it is determined that the charge removal process has not been completed, the process returns to step S210.

  If it is determined in step S220 that the charge removal process is not normal, for example, if the detection value from each sensor satisfies the allowable limit condition 2 in the interlock process, the charge removal process is stopped in step S222. In step S270 to step S290, the setting process for the non-normal charge removal condition is executed. The processing from step S270 to step S290 is the same as the processing from step S170 to step S190 shown in FIG.

  When the charge removal process is executed in this way, if the charge removal process is stopped due to an abnormality during the charge removal process, it is considered that the wafer W is not sufficiently discharged regardless of the set charge removal conditions. It is done. Therefore, in such a case, the charge removal process can be executed again after setting the charge removal condition in the normal state. Thereby, the wafer W can be sufficiently discharged.

  If it is determined in step S230 that the charge removal process has been completed, the charge removal process status is displayed on the display unit 240 in step S240. At this time, a retry selection screen for the charge removal process may be displayed on the display unit 240 together with the charge removal process status. As the retry selection screen for the static elimination process, for example, whether or not to retry the static elimination process is displayed by “YES” or “NO”.

  Further, as the charge removal processing status, for example, the number of times that the allowable limit condition 1 stored in the charge removal processing status of the allowable limit condition information 292 as shown in FIG. For example, when the number of times that the permissible limit condition 1 is satisfied is 0, it means that the neutralization process has been normally completed without generating any warning about the neutralization process, so that it may be displayed. . In addition, if the number of times that the permissible limit condition 1 is satisfied is 1 or more, the static elimination process is completed without reaching the permissible limit condition 2 although the warning about the neutralization process has occurred at least once. Means. Therefore, in such a case, it is possible to select retry on the static elimination selection screen.

  Next, in step S250, it is determined whether or not to retry the charge removal process. Specifically, if “YES” is selected on the static elimination selection screen, it is determined to retry the static elimination process, and if “NO” is selected, it is determined not to retry the static elimination process.

  If it is determined in step S250 that the charge removal process is to be retried, in step S270 to step S290, the process for setting the non-normal charge removal condition is executed, the process returns to step S210, and the charge removal process is retried. In other words, when retrying the static elimination process, the neutralization neutralization condition can be edited, so that the static elimination process can be retried by changing the static elimination condition. As a result, it is possible to reliably prevent the wafer W from being detached from the electrostatic chuck 122 while the neutralization of the wafer W is insufficient.

  In the flowchart shown in FIG. 9, steps S210 to S250 and steps S270 to S290 are repeated until it is determined in step S250 that the charge removal process is not retried. The neutralization process can be retried. As a result, for example, the charge removal process can be executed while changing the charge removal conditions little by little, and the charge removal process status can be confirmed, so that the wafer W can be discharged more reliably.

  If it is determined in step S250 that the charge removal process is not retried, the wafer W is detached from the electrostatic chuck 122 in step S260, and the process returns to the process of FIG. Specifically, for example, by lifting the lift pins, the wafer W is detached from the electrostatic chuck 122 of the lower electrode 120 that also serves as a mounting table, and the charge removal process is completed. Thereby, not only when the wafer processing is normally completed, but also when the wafer processing is not normally completed, the wafer W can be sufficiently discharged, so that the wafer W is not broken or shifted. Can be carried out or removed by a transfer arm or the like.

  Further, a medium such as a storage medium storing a software program for realizing the functions of the above-described embodiments (for example, a wafer processing function and a charge removal processing function) is supplied to the system or apparatus, and the computer (or CPU or It goes without saying that the present invention can also be achieved when the MPU) reads and executes a program stored in a medium such as a storage medium.

  In this case, the program itself read from the medium such as a storage medium realizes the functions of the above-described embodiment, and the medium such as the storage medium storing the program constitutes the present invention. Examples of the medium such as a storage medium for supplying the program include a floppy (registered trademark) disk, a hard disk, an optical disk, a magneto-optical disk, a CD-ROM, a CD-R, a CD-RW, a DVD-ROM, and a DVD-RAM. , DVD-RW, DVD + RW, magnetic tape, non-volatile memory card, ROM, or network download.

  Note that by executing the program read by the computer, not only the functions of the above-described embodiments are realized, but also an OS or the like running on the computer is part of the actual processing based on the instructions of the program. Alternatively, the case where the functions of the above-described embodiment are realized by performing all the processing and the processing is included in the present invention.

  Furthermore, after a program read from a medium such as a storage medium is written to a memory provided in a function expansion board inserted into the computer or a function expansion unit connected to the computer, the function is determined based on the instructions of the program. The present invention also includes a case where the CPU or the like provided in the expansion board or the function expansion unit performs part or all of the actual processing and the functions of the above-described embodiments are realized by the processing.

  As mentioned above, although preferred embodiment of this invention was described referring an accompanying drawing, it cannot be overemphasized that this invention is not limited to the example which concerns. It will be apparent to those skilled in the art that various changes and modifications can be made within the scope of the claims, and these are of course within the technical scope of the present invention. Understood.

  The present invention can be applied to a method of neutralizing a substrate to be processed, a substrate processing apparatus, and a program performed when the substrate to be processed is detached from the mounting table.

It is sectional drawing which shows the structural example of the substrate processing apparatus concerning embodiment of this invention. It is a block diagram which shows the structural example of the control part shown in FIG. FIG. 3 is a diagram showing a specific example of a data table of wafer processing condition information shown in FIG. 2. It is a figure which shows the specific example of the data table of the normal time static elimination condition information shown in FIG. It is a figure which shows the specific example of the data table of tolerance limit condition information shown in FIG. It is a figure which shows the specific example of the data table of the static elimination condition information in abnormal time shown in FIG. It is a flowchart which shows the specific example of the static elimination process concerning the embodiment. It is a flowchart which shows the specific example of the setting of the static elimination conditions shown in FIG. It is a flowchart which shows the specific example of execution of the static elimination process shown in FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Substrate processing apparatus 102 Processing chamber 103 Container body 104 Cover 105 Bellows 106 Gate valve 120 Lower electrode 122 Electrostatic chuck 124 Electrostatic chuck electrode 125 DC power supply 126 Variable resistance 127 Switch 128, 129 Terminal 132 Focus ring 134 Cover ring 136 Refrigerant chamber 138 Chiller unit 139 Heat transfer gas supply unit 140 Upper electrode 142 Processing gas supply unit 144 Electrode plate 145 Gas vent hole 146 Electrode support 147 Buffer chamber 148 Insulating member 150 Shield ring 162 First high frequency power source 164 Matching unit 166 High pass filter (HPF )
172 Second high frequency power source 174 Matching unit 176 Low pass filter (LPF)
180 Exhaust port 182 Exhaust device 200 Control unit 210 CPU
220 ROM
230 RAM
240 Display means 250 Input / output means 260 Notification means 270 Various controllers 280 Recipe parameter storage means 282 Wafer processing condition information 284 Normal-state discharge condition information 290 Device parameter storage means 292 Permissible limit condition information 294 Unnormal discharge condition information W Wafer

Claims (30)

A method of neutralizing a substrate to be processed, which is performed when a substrate to be processed, which is subjected to a predetermined process while being sucked and held by a mounting table disposed in a processing chamber, is detached from the mounting table,
Before performing neutralization of the substrate to be processed, it is determined whether or not a predetermined process on the substrate to be processed has been normally completed. If it is determined that normal processing has been completed, the normal time stored in the normal-time neutralization condition information storage unit The neutralization condition that sets the neutralization condition based on the non-normal condition neutralization condition information stored in the abnormal condition neutralization condition information storage means when the neutralization condition is set based on the neutralization condition information A setting process;
A charge removal process executing step of performing charge removal processing of the substrate to be processed based on the charge removal condition set by the charge removal condition setting means;
A method of neutralizing a substrate to be processed, comprising: In the static elimination condition setting step, it is determined whether or not the process for the substrate to be processed has been transferred to maintenance when the process has not been completed normally. The method of claim 1, further comprising the step of setting a charge removal condition based on the non-normal charge removal condition information stored in the apparatus parameter storage unit. The charge removal process execution step detects the charge removal process status, compares the detected value with an allowable limit condition, and if the charge removal process condition detected value satisfies the allowable limit condition, the charge removal process is in an abnormal state. Judging, stopping the charge removal process, setting a charge removal condition based on the abnormal charge removal condition from the abnormal charge removal condition information storage means, and retrying the charge removal process, The method for neutralizing a substrate to be processed according to claim 1 or 2. The allowable limit condition has two stages: an abnormal condition in which the charge removal process becomes abnormal, and a warning condition that is looser than the abnormal condition.
The charge removal process execution step determines that the charge removal process is in an abnormal state when the detected value of the charge removal process status satisfies the abnormal condition, stops the charge removal process, and the detected value of the charge removal process status indicates the warning. The method of claim 3, further comprising a step of performing the warning process by determining that the charge removal process is in a warning state when the condition is satisfied. The charge removal process execution step asks for a selection as to whether or not to retry the charge removal process after the charge removal process of the substrate to be processed. The method for neutralizing a substrate to be processed according to any one of claims 1 to 4, further comprising a step of setting a neutralization condition on the basis of abnormal neutralization condition information from the time neutralization condition information storage means. 6. The method for neutralizing a substrate to be processed according to any one of claims 1 to 5, wherein the information on the condition for neutralizing static electricity can be edited by an input means. 7. The method of claim 6, wherein the non-normal charge removal condition information includes more editable charge removal condition parameters than the normal charge removal condition information. The charge removal process executed based on the charge removal condition set based on the abnormal charge removal condition information includes a step of evacuating the back surface of the substrate to be processed and the mounting table. The static elimination method of the to-be-processed substrate in any one of Claims 1-7. 2. The neutralization process includes a step of repeatedly reversing the polarity of an applied voltage to an electrostatic attraction unit that electrostatically attracts the object to be processed to a mounting table disposed in the processing chamber. The method for neutralizing a substrate to be processed according to any one of -8. The abnormal-state static elimination condition information includes at least parameters of an applied voltage to the electrostatic chuck, a pressure in the processing chamber, and a gas flow rate from a plurality of gas lines that supply a processing gas into the processing chamber. The method for neutralizing a substrate to be processed according to claim 9. A substrate processing apparatus for performing charge removal of a substrate to be processed when a substrate to be processed, which is subjected to predetermined processing while being sucked and held by a mounting table disposed in a processing chamber, is detached from the mounting table. ,
Normal discharge condition information storage means for storing normal discharge condition information;
A non-normal discharge condition information storing means for storing abnormal discharge condition information;
Before performing neutralization of the substrate to be processed, it is determined whether or not predetermined processing for the substrate to be processed has been normally completed. If it is determined that normal processing has been completed, the normal neutralization from the normal neutralization condition information storage unit is performed. The neutralization condition setting means for setting the neutralization condition based on the abnormal condition neutralization condition information from the abnormal condition neutralization condition information storage means when the neutralization condition is set based on the condition information and it is determined that the normal termination is not completed. When,
A charge removal process executing means for performing charge removal processing of the substrate to be processed based on the charge removal condition set by the charge removal condition setting means;
A substrate processing apparatus comprising: The static elimination condition setting means determines whether or not the process for the substrate to be processed has been transferred to maintenance when the process has not been completed normally. 12. The substrate processing apparatus according to claim 11, wherein the neutralization condition is set based on the non-normal condition neutralization condition information stored in the apparatus parameter storage unit. The static elimination process execution means detects the static elimination process status, compares the detected value with an allowable limit condition, and when the detected value of the static elimination process condition satisfies the allowable limit condition, the static elimination process is in an abnormal state. The static elimination process is judged and stopped, and the static elimination condition is set based on the abnormal charge elimination condition from the abnormal charge removal condition information storage means, and the static elimination process is retried. The substrate processing apparatus according to 11 or 12. The allowable limit condition has two stages: an abnormal condition in which the charge removal process becomes abnormal, and a warning condition that is looser than the abnormal condition.
If the detected value of the charge removal process status satisfies the abnormal condition, the charge removal process execution means determines that the charge removal process is in an abnormal state and stops the charge removal process, and the detected value of the charge removal process status indicates the warning The substrate processing apparatus according to claim 13, wherein when the condition is satisfied, the warning process is performed by determining that the charge removal process is in a warning state. The charge removal process execution means asks for selection of whether or not to retry the charge removal process after the charge removal process of the substrate to be processed. The substrate processing apparatus according to claim 11, wherein the neutralization condition is set based on the abnormal-period neutralization condition information from the normal neutralization condition information storage unit. The substrate processing apparatus according to claim 11, wherein the non-normal charge removal condition information is editable by an input unit. The substrate processing apparatus according to claim 16, wherein the non-normal charge removal condition information includes more editable charge removal condition parameters than the normal charge removal condition information. The charge removal process executed based on the charge removal condition set based on the abnormal charge removal condition information includes a process of evacuating the back surface of the substrate to be processed and the mounting table. The substrate processing apparatus according to claim 11. 12. The neutralization process includes a process of repeatedly reversing the polarity of an applied voltage to an electrostatic attraction unit that electrostatically attracts the object to be processed to a mounting table disposed in the processing chamber. The substrate processing apparatus in any one of -18. The abnormal-state static elimination condition information includes at least parameters of an applied voltage to the electrostatic chuck, a pressure in the processing chamber, and a gas flow rate from a plurality of gas lines that supply a processing gas into the processing chamber. The substrate processing apparatus according to claim 19. For performing the process of removing the substrate to be processed, which is performed when the substrate to be processed, which is subjected to the predetermined processing while being sucked and held by the mounting table disposed in the processing chamber, is detached from the mounting table. A program,
Computer
Before performing neutralization of the substrate to be processed, it is determined whether or not a predetermined process on the substrate to be processed has been normally completed. If it is determined that normal processing has been completed, the normal time stored in the normal-time neutralization condition information storage unit The neutralization condition that sets the neutralization condition based on the non-normal condition neutralization condition information stored in the abnormal condition neutralization condition information storage means when the neutralization condition is set based on the neutralization condition information Setting procedure,
A charge removal process execution procedure for performing charge removal processing of the substrate to be processed based on the set charge removal condition;
A program for running In the static elimination condition setting procedure, it is determined whether or not the process for the substrate to be processed has been transferred to maintenance when the process has not been completed normally. The program according to claim 21, further comprising a procedure for setting a static elimination condition on the basis of information on a static elimination condition stored in the apparatus parameter storage means. The charge removal process execution procedure detects the charge removal process status, compares the detected value with an allowable limit condition, and if the charge removal process condition detected value satisfies the allowable limit condition, Determining and stopping the static elimination process, setting a static elimination condition based on the abnormal charge removal condition from the abnormal discharge condition information storage unit, and retrying the static removal process. The program according to claim 21 or 22. The allowable limit condition has two stages: an abnormal condition in which the charge removal process becomes abnormal, and a warning condition that is looser than the abnormal condition.
If the detected value of the charge removal process condition satisfies the abnormal condition, the charge removal process execution procedure determines that the charge removal process is in an abnormal state, stops the charge removal process, and the detected value of the charge removal process status indicates the warning. 24. The program according to claim 23, further comprising a procedure for determining that the charge removal process is in a warning state when the condition is satisfied and performing the warning process. The charge removal process execution procedure asks for selection of whether or not to retry the charge removal process after the charge removal process of the substrate to be processed. If the charge removal process retry is selected, the abnormal process is performed. The program according to any one of claims 21 to 24, including a procedure for setting a static elimination condition based on the abnormal static elimination condition information from the normal static elimination condition information storage means. The program according to any one of claims 21 to 25, wherein the non-normal charge removal condition information can be edited by an input means. 27. The program according to claim 26, wherein the non-normal charge removal condition information includes more editable charge removal condition parameters than the normal charge removal condition information. The charge removal process executed based on the charge removal condition set based on the non-normal charge removal condition information includes a procedure for evacuating the back surface of the substrate to be processed and the mounting table. The program according to any one of claims 21 to 27. 23. The charge removal process includes a procedure of repeatedly reversing the polarity of an applied voltage to an electrostatic chuck that electrostatically chucks the object to be mounted on a mounting table disposed in the processing chamber. The program in any one of -28. The abnormal-state static elimination condition information includes at least parameters of an applied voltage to the electrostatic chuck, a pressure in the processing chamber, and a gas flow rate from a plurality of gas lines that supply a processing gas into the processing chamber. The program according to claim 29.

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