JP2006253528A - Reflecting light emitting diode unit, and light emitting diode - Google Patents

Reflecting light emitting diode unit, and light emitting diode Download PDF

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JP2006253528A
JP2006253528A JP2005070420A JP2005070420A JP2006253528A JP 2006253528 A JP2006253528 A JP 2006253528A JP 2005070420 A JP2005070420 A JP 2005070420A JP 2005070420 A JP2005070420 A JP 2005070420A JP 2006253528 A JP2006253528 A JP 2006253528A
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light emitting
light
emitting diode
emitting element
lead
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Shigeru Yamazaki
繁 山崎
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OPTO DEVICE KENKYUSHO KK
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OPTO DEVICE KENKYUSHO KK
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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Abstract

<P>PROBLEM TO BE SOLVED: To obtain a unit that can set a lead's thickness and a shape, and adhere and fix at least a pair of light emitting diodes in order to obtain the unit composed of multiple sub-units and excellent in heat dissipation without losing light radiation characteristics, in a light emitting diode with a structure where a light emitting element and a reflecting surface are arranged such that they face each other. <P>SOLUTION: A pair of light emitting diodes can be closely adhered by making a lead thickness of one lead thinner than the other on which a light emitting element is mounted, bending it, and matching the leads. This enables a high-performance reflecting light emitting diode unit to be obtained that is efficient, compact, and excellent in heat dissipation, and on which multiple sub-units are mounted. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明はエポキシ樹脂で封止された反射光学系を有する発光ダイオ−ド、所謂反射型発光ダイオードに関するものであり、詳細には例えば液晶プロジェクターの光源、自動車用ヘッドランプあるいは各種照射装置用光源として使用する際にハウジングや取り付けに適した発光ダイオードおよび発光ダイオードユニットの構成に係わるものである。   The present invention relates to a light-emitting diode having a reflective optical system sealed with an epoxy resin, a so-called reflective light-emitting diode, and more specifically as a light source for a liquid crystal projector, a headlamp for an automobile, or a light source for various irradiation devices. The present invention relates to a structure of a light emitting diode and a light emitting diode unit suitable for housing and mounting when used.

近年発光ダイオードの高出力化への要求が強く、特に照明用、液晶バックライト用或いは車載用発光ダイオードにおいて期待されている。
従来この種の高出力発光ダイオードに採用されているパワーパッケージ構造は図８に示すような構成からなっている。
高出力、即ち発光ダイオード１個からの光量を増大するために大きな電流を発光素子へ供給できるように発光素子外形寸法を大きくした従来発光素子の約４倍ほどの発光面積とすることによって電流密度を高めることなく大電流が流せることから一般的に使用されている。このような発光素子を熱伝導性の良好な大きな銅やアルミニウム金属からなる放熱ブロックの上に搭載し、発光素子から発した熱を積極的に外部へ放熱できる構造が種々考案されている。
一方、上記した反射光学系を有する、俗に反射型発光ダイオードと称する図９に示すものにおいては発光素子が比較的発光ダイオードの表面近傍に搭載されているために従来砲弾型発光ダイオードよりも放熱しやすい構造とはいえ大電流を発光素子へ通電する高出力発光ダイオードにおいては同様に放熱構造を工夫する必要がある。
反射型発光ダイオードとは基本構造が異なるものの、前記従来例の代表的なものとして、特開２００１−２５７３０１号広報及び特開２００３−１２４５２４号広報に開示されている。図８において説明すると、通常よりも大きな電流を発光素子８１へ通電するために電流密度を押さえるために発光素子の外形寸法は大きく、且つ発光素子８１から放射された熱を外部へ効率よく放散させるために熱伝導性材料８２を発光素子８１に熱伝導性接着剤８７にて直接接合し、発光素子８１上面に設けられたアノード、カソード各電極８３ａ，ｂと前記熱伝導性材料８２とは電気的に絶縁された電極リード８４ａ，ｂとを金線８５ａ，ｂを用いて電気的に接合した後に発光素子８１及び金線部を覆うように透明エポキシ樹脂或いはシリコン樹脂８６にて封止した大電流を通電させても信頼性を損なうことのない構造が提案されている。 In recent years, there has been a strong demand for higher output of light-emitting diodes, and is expected especially for light-emitting diodes for illumination, liquid crystal backlights, and in-vehicle use.
Conventionally, the power package structure employed in this type of high power light emitting diode has a structure as shown in FIG.
The current density is increased by about 4 times the light emitting area of the conventional light emitting device which has a large light emitting device outer dimension so that a large current can be supplied to the light emitting device in order to increase the amount of light from one light emitting diode. It is generally used because a large current can flow without increasing the current. Various structures have been devised in which such a light-emitting element is mounted on a heat dissipation block made of large copper or aluminum metal having good thermal conductivity and heat generated from the light-emitting element can be actively dissipated to the outside.
On the other hand, in the case shown in FIG. 9, which is referred to as a reflection type light emitting diode having the above-described reflection optical system, the light emitting element is mounted relatively near the surface of the light emitting diode, so that heat is radiated more than the conventional bullet type light emitting diode. Although it is a structure that is easy to perform, it is necessary to devise a heat dissipation structure in a high-power light emitting diode that supplies a large current to the light emitting element.
Although the basic structure is different from that of the reflective light emitting diode, it is disclosed in Japanese Patent Application Laid-Open Nos. 2001-257301 and 2003-124524 as typical examples of the conventional example. Referring to FIG. 8, the outer dimensions of the light emitting element are large in order to suppress the current density in order to pass a larger current than usual to the light emitting element 81, and the heat radiated from the light emitting element 81 is efficiently dissipated to the outside. For this purpose, the heat conductive material 82 is directly bonded to the light emitting element 81 with a heat conductive adhesive 87, and the anode and cathode electrodes 83a and 83b provided on the upper surface of the light emitting element 81 and the heat conductive material 82 are electrically connected. The electrically insulated electrode leads 84a and 84b are electrically joined using gold wires 85a and 85b, and then sealed with a transparent epoxy resin or silicon resin 86 so as to cover the light emitting element 81 and the gold wire portion. A structure that does not impair reliability even when a current is applied has been proposed.

一方、反射型構造においては発光素子が光の放射面近傍にあるために上記のような放熱構造を採用することが基本構成上難しく、特開２００４−００６４３８号広報や特開平１１−１６３４１１号広報に開示されているようにせいぜいパッケージ外へ露出したリード部において放熱性を高めるためにリード幅を広げたり、反射面を金属板で構成し、発光素子が搭載されている側のリードと電気的に即ち熱的にも一体的になるようにリード金属と反射面金属とを接触させることによって放熱性を向上させ解決が図られている。
図９の構造断面図を持って説明すると、発光素子９１から放射された光は発光素子９１に対向するように設けられた反射面９２に一旦反射された後に放射面９３から外部へ光が放散されることになる。発光素子は一方のリード９４ａのパット部に光学的焦点近傍に電気伝導性接着剤９５を介して配置され、さらに発光素子９１上面に設けられたカソード電極９５と対抗リード９４ｂとは金線９６を用いて電気的に接続されている。
さらに、発光素子９１と反射面９３との隙間及び全体を透明エポキシ樹脂９７にて充填され発光素子９１及び反射面９３が保護されようになっている。
図９により作成された反射型発光ダイオードの外観概略を図１０に示す。
特開２００１−２５７３０１号広報 特開２００３−１２４５２４号広報 特開２００４−００６４３８号広報 特開平１１−１６３４１１号広報 On the other hand, in the reflection type structure, since the light emitting element is in the vicinity of the light emission surface, it is difficult to adopt the heat dissipation structure as described above, and it is difficult to adopt the heat dissipation structure as described above. JP 2004-006438 A and JP 11-163411 A In order to improve heat dissipation at the lead part exposed to the outside of the package at most, as disclosed in the above, the lead width is widened, or the reflection surface is made of a metal plate, and the lead on the side where the light emitting element is mounted is electrically connected In other words, the problem is solved by improving the heat dissipation by bringing the lead metal and the reflective surface metal into contact with each other so as to be integrated thermally.
9A and 9B, the light emitted from the light emitting element 91 is once reflected by the reflecting surface 92 provided so as to face the light emitting element 91, and then the light is diffused from the emitting surface 93 to the outside. Will be. The light emitting element is disposed on the pad portion of one lead 94a in the vicinity of the optical focal point via an electrically conductive adhesive 95, and the cathode electrode 95 and the opposing lead 94b provided on the upper surface of the light emitting element 91 are connected with a gold wire 96. Electrically connected.
Further, the gap between the light emitting element 91 and the reflecting surface 93 and the whole are filled with the transparent epoxy resin 97 so that the light emitting element 91 and the reflecting surface 93 are protected.
FIG. 10 shows an outline of the external appearance of the reflection type light emitting diode produced by FIG.
JP 2001-257301 A Japanese Laid-Open Patent Publication No. 2003-124524 Japanese Laid-Open Patent Publication No. 2004-006438 JP 11-163411 A

特に上記のように反射型発光ダイオードにおいて大きな電流を通電しようとするときは回路基板や筐体に反射型発光ダイオードを実装する際の放熱性を考慮しなければならない。
この反射型発光ダイオードにおいて、特にひとつの基板上に複数個の発光ダイオードを高密度に実装しようとしたときに、各発光ダイオードからの放熱により実質的に周囲温度が異常に高まり、その結果発光ダイオードの寿命特性の低下や発光効率の低下などによる信頼性に係わる問題点が生じ、この点の解決が課題とされている。 In particular, when a large current is to be applied to the reflective light emitting diode as described above, heat dissipation when the reflective light emitting diode is mounted on a circuit board or housing must be considered.
In this reflection type light emitting diode, particularly when a plurality of light emitting diodes are to be mounted at a high density on one substrate, the ambient temperature is substantially increased due to heat radiation from each light emitting diode, resulting in the light emitting diode. Problems related to reliability occur due to a decrease in lifetime characteristics and a decrease in light emission efficiency, and the solution of this point is an issue.

本発明では上記の課題を解決するための具体的な手段を次の構成とする。
反射型発光ダイオードの特に発光素子を搭載した側の本体外部に突き出したリードにおいて、そのリードと放熱性に優れた回路基板あるいは筐体とを熱伝導性に優れた接着剤あるいはネジ止めなどにより密着固定することによって発光素子から発した熱をリードを介して回路基板あるいは筐体へ積極的に放散させる。
一方、実装密度を高めるために発光素子が搭載されていない対向電極側の外部に突き出したリードは発光ダイオード本体の側面に沿って屈曲され相隣接する発光ダイオードとは同様の発光素子が搭載されていないリードとを直接あるいは間接的にリード同士を密着して配置する。
このことによって、複数個の反射型発光ダイオードを放熱性を損なうことなく高密度に回路基板あるいは筐体へ実装することが可能となる。 In the present invention, specific means for solving the above-described problems are configured as follows.
In the lead that protrudes outside the main body of the reflective light emitting diode, especially on the side where the light emitting element is mounted, the lead and the circuit board or case with excellent heat dissipation are adhered to each other by adhesive or screwing with excellent thermal conductivity. By fixing, the heat generated from the light emitting element is actively dissipated to the circuit board or the case through the leads.
On the other hand, in order to increase the mounting density, the lead protruding outside the counter electrode side where no light emitting element is mounted is bent along the side surface of the light emitting diode body, and the light emitting element similar to the adjacent light emitting diode is mounted. A lead that is not present is disposed in direct or indirect contact with each other.
This makes it possible to mount a plurality of reflection type light emitting diodes on a circuit board or casing at high density without impairing heat dissipation.

発光素子と対向して反射面を設けた反射型発光ダイオードにおいて、図１に示されるように発光素子を搭載した側のリードは放熱性の高い回路基板あるいは筐体に熱的コンタクトを損なうことなく取り付けられ、一方の発光素子を搭載していない側のリードは発光ダイオードの本体から突出した後に本体に沿うように折り曲げられている。
隣り合う一方の反射型発光ダイオードにおいて発光素子を搭載していない側のリードは同様に発光ダイオードの本体から突出した後に本体に沿うように折り曲げられ隣接する発光ダイオードとは発光素子が搭載されていないリード同士で電気的に接合されている。
このことにより、一対の反射型発光ダイオードは発光素子が搭載されていないリード同士で接合し一体化され、双方の発光素子を搭載したリードは独立あるいは共有して回路基板あるいは筐体とは熱的に一体的に接合されていることになる。 In a reflective light emitting diode having a reflective surface facing a light emitting element, the lead on the side where the light emitting element is mounted as shown in FIG. 1 does not impair thermal contact with a circuit board or housing having high heat dissipation. The lead on the side not mounted with one light emitting element is bent along the main body after protruding from the main body of the light emitting diode.
Similarly, the lead on the side where the light emitting element is not mounted in one of the adjacent reflective light emitting diodes is similarly bent along the main body after protruding from the main body of the light emitting diode, and the light emitting element is not mounted on the adjacent light emitting diode. The leads are electrically joined together.
As a result, the pair of reflection type light emitting diodes are joined and integrated with the leads on which the light emitting elements are not mounted, and the leads on which both the light emitting elements are mounted are independent or shared and are thermally separated from the circuit board or the case. It will be joined integrally.

以下、本発明を第１〜６図において説明する。第１図において、１１は発光素子であり、１２ａ，ｂはリ−ドフレ−ム、１３は金線である。
発光素子１１は、リ−ドフレ−ム１２ａ上の所定の位置に設けられた素子搭載用ラウンドの部位に導電性樹脂１４を介して固定され、発光素子１１と一方のリ−ドフレ−ム１２ｂとの電気的接続は金線１３によってなされている。
このように構成された発光素子が搭載されたリードフレーム１２ａ，ｂを用意する。
このとき、発光素子を搭載するリードフレーム１２ａ側のリード厚を対向する発光素子を搭載しないリードフレーム１２ｂの厚みよりも厚くしたものを使用する。
このことによって、発光素子が搭載しないリードフレーム１２ｂはリードフレームを曲げやすいようになにものとして用意する。
一方では第２図に示すようなアルミニウム或いは銀からなる蒸着或いはメッキ層からなる反射面２１を内側に備えたポリエーテルエーテルケトン樹脂とポリ フェニレン サルファイド（ＰＰＳ）樹脂との混合樹脂を使用した耐熱性樹脂からなる凹面体本体２２を用意する。
この時に反射体２２には前記リードフレームを填め込むためのリード位置に合わせた填め込み部位２３を対向する辺の一対に形成しておく。
このように用意された発光素子を搭載したリードフレームと対向する発光素子を搭載していないリードとは凹面状反射面を持つ凹面体とを第３図に示すように発光素子が凹面状反射面に対向するように配置し凹面体端面に設けた溝にリードフレームを勘合させる。
凹面体の溝に勘合させる際に事前にリードフレーム部位に光硬化性樹脂あるいは接着性樹脂３１をディスペンサーなどを用いて少量滴下した後に硬化させて第４図に示すようにポリエーテルエーテルケトン（ＰＥＥＫ）樹脂あるいはＰＥＥＫ樹脂にポリ フェニレン サルファイド（ＰＰＳ）樹脂が添加された凹面体本体と発光素子を搭載したリードフレームと発光素子が搭載されていないリードフレームとを固定する。
次にこの発光素子と蒸着あるいはメッキによって凹面部に反射鏡を形成させた前記凹面体との間の隙間にカチオン重合型透明エポキシ樹脂を凹面体本体の縁面まで充填させた後に８０〜１３０℃の雰囲気炉にて樹脂を硬化させ完成させる。この際リードフレームを勘合させた反射体辺部の凹部からエポキシ樹脂が漏れないように高温においてもチクソ材が添加された粘性の高い樹脂を使用することによって漏れを防止できることも確認された。
上述の実施例において、発光素子を搭載したリード側に厚いリードフレームを採用したことによって放熱特性が増し、発光素子に大電流を通電して、点灯しても過熱されることなく長寿命の高出力反射型発光ダイオードが得られる。
次に、発光素子を搭載していない側のリード４１を図４に示すように凹面体本体側面に沿うように折り曲げる。
このように曲げ加工された反射型発光ダイオード５１ａ，ｂを２個用意し、図５に示すように前記発光素子を搭載していない折り曲げたリード５２ａ，ｂの側面同士を突き合わせるように配置しハンダ付け法にて電気的に接合する。
さらに発光素子が搭載されているリード５３ａ，ｂを放熱性に優れた銅金属からなる筐体５４に接続すると同時に電気的にも導通するように熱伝導製接着剤あるいはビス止めにより密着固定させる。
このことによって、一対の反射型発光ダイオードを放熱性を損なうことなく密着固定させることができる。
以上により、２個の反射型発光ダイオードからなるユニットが完成する。
さらに、２個の発光ダイオードから放射された光を一点に集中させるために図６に示すように２個の発光ダイオードを角度を持って配置させることもできる。
このことによって、単位面積あたりの光放射量を２倍にすることが可能になる。
なお、２つの発光ダイオードにおいて発光素子を搭載していない側のリード同士を実施例においては直接電気的な接合あるいは密着をした構成としているが、必ずしも密着させないで、さらに放熱のための部材を発光素子を搭載していない一対のリード間に挟み込んだり、対流の発生のために多少の隙間を持たせて実装することも本発明の効果において同じような目的を達成することができる。 The present invention will be described below with reference to FIGS. In FIG. 1, 11 is a light emitting element, 12a and b are lead frames, and 13 is a gold wire.
The light emitting element 11 is fixed to the element mounting round portion provided at a predetermined position on the lead frame 12a via the conductive resin 14, and the light emitting element 11 and one of the lead frames 12b Are electrically connected by a gold wire 13.
Lead frames 12a and 12b on which the light emitting elements configured as described above are mounted are prepared.
At this time, the lead frame 12a on which the light emitting element is mounted is made thicker than the lead frame 12b on which the opposing light emitting element is not mounted.
As a result, the lead frame 12b on which the light emitting element is not mounted is prepared as something that makes it easy to bend the lead frame.
On the other hand, heat resistance using a mixed resin of a polyether ether ketone resin and a polyphenylene sulfide (PPS) resin provided with a reflective surface 21 made of an evaporation or plating layer made of aluminum or silver as shown in FIG. A concave body body 22 made of resin is prepared.
At this time, the reflector 22 is formed with a pair of opposing sides 23 corresponding to the lead position for inserting the lead frame.
The lead frame mounting the light emitting element thus prepared and the lead not mounting the facing light emitting element are a concave body having a concave reflecting surface, and the light emitting element is a concave reflecting surface as shown in FIG. The lead frame is fitted into a groove disposed on the end surface of the concave body so as to face the surface.
When fitting into the groove of the concave body, a small amount of photo-curing resin or adhesive resin 31 is dropped on the lead frame portion in advance using a dispenser or the like and then cured, as shown in FIG. 4, polyether ether ketone (PEEK) ) A concave body body in which polyphenylene sulfide (PPS) resin is added to resin or PEEK resin, a lead frame on which a light emitting element is mounted, and a lead frame on which the light emitting element is not mounted are fixed.
Next, after filling the gap between the light emitting element and the concave body in which the reflecting mirror is formed on the concave portion by vapor deposition or plating, the cation polymerization type transparent epoxy resin is filled up to the edge surface of the concave body main body, and then 80 to 130 ° C. The resin is cured in an atmosphere furnace and completed. At this time, it was also confirmed that leakage could be prevented by using a highly viscous resin to which a thixo material was added even at a high temperature so that the epoxy resin would not leak from the concave part of the reflector side part fitted with the lead frame.
In the above-described embodiment, the heat dissipation characteristics are increased by adopting a thick lead frame on the lead side on which the light emitting element is mounted, and a long current is high without being overheated even if the light emitting element is energized and turned on. An output reflective light emitting diode is obtained.
Next, the lead 41 on the side where the light emitting element is not mounted is bent along the side surface of the concave body as shown in FIG.
Two reflection type light emitting diodes 51a and 51b bent in this way are prepared and arranged so that the side surfaces of the bent leads 52a and 52b on which the light emitting element is not mounted are abutted as shown in FIG. Electrically joined by soldering method.
Further, the leads 53a and 53b on which the light-emitting elements are mounted are connected to a casing 54 made of copper metal having excellent heat dissipation, and at the same time, are closely fixed by a heat conductive adhesive or a screw so as to be electrically connected.
As a result, the pair of reflective light emitting diodes can be tightly fixed without impairing heat dissipation.
Thus, a unit composed of two reflective light emitting diodes is completed.
Further, in order to concentrate the light emitted from the two light emitting diodes at one point, the two light emitting diodes can be arranged at an angle as shown in FIG.
This makes it possible to double the amount of light emission per unit area.
In the embodiment, the leads on the side where the light emitting element is not mounted in the two light emitting diodes are directly connected to each other or are in close contact with each other. It is possible to achieve the same object in the effect of the present invention by sandwiching between a pair of leads on which an element is not mounted or mounting with a slight gap for the generation of convection.

さらに多数個の配列体としての実施例として、上記２個の基本ユニットを上から鳥瞰した図７のように並べることによって少なくとも４個の密着ユニットが完成する。
この場合も、実施例１と同様に各発光ダイオードが一点に光が集中するように角度を持って配置することによって１個の発光ダイオードの４倍の光強度が得られたユニットとすることができる。 Further, as an example of a large number of arrays, at least four contact units are completed by arranging the two basic units as shown in FIG.
In this case as well, as in the first embodiment, each light emitting diode is arranged at an angle so that the light is concentrated on one point, thereby obtaining a unit in which light intensity four times that of one light emitting diode is obtained. it can.

なお、本実施例においては発光素子を搭載していない側のリードを曲折し、突き合わせることによって一対のユニットを構成したが、発光ダイオード本体の外側に出た発光素子を搭載していないリードを本体近傍で短く切断して突き合わせることによっても同様の近接した一対のユニットを得ることができることは容易に考えられる。   In this embodiment, the lead on the side where the light emitting element is not mounted is bent and butted together to constitute a pair of units. It is easily conceivable that a similar pair of units can be obtained by cutting and butting short in the vicinity of the main body.

本発明に基付くリードフレーム上に実装された発光素子の説明構造図である。FIG. 4 is an explanatory structural diagram of a light emitting device mounted on a lead frame according to the present invention. 本発明に基付く凹面体の概略構造図である。It is a schematic structure figure of the concave body based on the present invention. 本発明に基付いた凹面体とリードフレーム上に実装された発光素子との関係を分かりやすく説明した配置図である。FIG. 6 is an arrangement diagram illustrating the relationship between a concave body based on the present invention and a light emitting element mounted on a lead frame in an easy-to-understand manner. 本発明による発光ダイオードの外観図。The external view of the light emitting diode by this invention. 本発明による説明図である。It is explanatory drawing by this invention. 本発明による応用説明図である。It is application explanatory drawing by this invention. 本発明による応用例説明図である。It is application example explanatory drawing by this invention. 本発明による応用例説明図である。It is application example explanatory drawing by this invention. 従来からある凹面体を用いて発光素子と反射体との隙間をトランスファー法によって充填し、外部への露出したリード幅を広くし実質的に放熱特性が改善された構造断面図である。FIG. 6 is a cross-sectional view of a structure in which a gap between a light emitting element and a reflector is filled by a transfer method using a conventional concave body, a lead width exposed to the outside is widened, and heat dissipation characteristics are substantially improved. 図９の外観図である。FIG. 10 is an external view of FIG. 9.

Claims (4)

発光素子の発光面側とその素子が発する光を直接反射面で受けるように対向して配置してなる一対の発光ダイオードにおいて、少なくとも発光素子を搭載していない側の金属製リード側同士が突き合わされた配置としたことを特徴とする反射型発光ダイオードユニット。 In a pair of light emitting diodes arranged so as to face each other so that the light emitting surface side of the light emitting element and the light emitted from the element are directly received by the reflecting surface, at least the metal lead sides on the side where the light emitting element is not mounted protrude. A reflection type light emitting diode unit characterized in that the arrangement is combined. 発光素子の発光面側とその素子が発する光を直接反射面で受けるように対向して配置してなる発光ダイオードにおいて、少なくとも発光素子を搭載した側の金属製リードが発光素子が搭載されていない金属製リードよりもリード厚が厚いことを特徴とする第一項記載の反射型発光ダイオードユニットに使用する反射型発光ダイオード。 In a light-emitting diode that is disposed so as to face the light-emitting surface side of the light-emitting element so that the light emitted from the element is directly received by the reflecting surface, at least the metal lead on the side where the light-emitting element is mounted is not mounted with the light-emitting element The reflective light-emitting diode used in the reflective light-emitting diode unit according to claim 1, wherein the lead thickness is thicker than that of a metal lead. 発光素子の発光面側とその素子が発する光を直接反射面で受けるように対向して配置してなる発光ダイオードにおいて、少なくとも発光素子を搭載していない側の金属製リードが発光素子が搭載されている金属製リードよりも本体外側面において大きく曲折していることを特徴とする第一項記載の反射型発光ダイオードユニットに使用する反射型発光ダイオード。 In a light-emitting diode that is disposed so as to face the light-emitting surface side of the light-emitting element so that the light emitted from the element is directly received by the reflective surface, the light-emitting element is mounted on at least the metal lead on which the light-emitting element is not mounted The reflection type light emitting diode used for the reflection type light emitting diode unit according to claim 1, wherein the reflection type light emitting diode unit is bent more largely on the outer surface of the main body than the metal lead. 上記一対の発光ダイオードからなるユニットにおいて各発光ダイオードから放射された光が一点に集中されるように角度を持って取り付けられたことを特徴とする第一項記載の反射型発光ダイオードユニット。 2. The reflection type light emitting diode unit according to claim 1, wherein in the unit composed of the pair of light emitting diodes, the light emitting diodes are attached at an angle so that light emitted from each light emitting diode is concentrated at one point.
JP2005070420A 2005-03-14 2005-03-14 Reflecting light emitting diode unit, and light emitting diode Pending JP2006253528A (en)

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Publication number Priority date Publication date Assignee Title
JPH03171682A (en) * 1989-11-29 1991-07-25 Iwasaki Electric Co Ltd Light emitting diode
JP2000138397A (en) * 1998-11-04 2000-05-16 Nichia Chem Ind Ltd Led emitter and planar light emitting light source
JP2000183406A (en) * 1998-12-15 2000-06-30 Matsushita Electric Works Ltd Led
JP2002368285A (en) * 2001-06-11 2002-12-20 Omron Corp Light emitter, light-emitting module and method of manufacturing the same
JP2004006438A (en) * 2002-04-15 2004-01-08 Opto Device Kenkyusho:Kk Reflecting light emitting diode
JP2004228387A (en) * 2003-01-23 2004-08-12 Koha Co Ltd Light emitting device
JP2004254880A (en) * 2003-02-26 2004-09-16 Nippon Computer Network Kk Photopolymerization apparatus
JP2005044777A (en) * 2003-07-09 2005-02-17 Nichia Chem Ind Ltd Lighting device

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03171682A (en) * 1989-11-29 1991-07-25 Iwasaki Electric Co Ltd Light emitting diode
JP2000138397A (en) * 1998-11-04 2000-05-16 Nichia Chem Ind Ltd Led emitter and planar light emitting light source
JP2000183406A (en) * 1998-12-15 2000-06-30 Matsushita Electric Works Ltd Led
JP2002368285A (en) * 2001-06-11 2002-12-20 Omron Corp Light emitter, light-emitting module and method of manufacturing the same
JP2004006438A (en) * 2002-04-15 2004-01-08 Opto Device Kenkyusho:Kk Reflecting light emitting diode
JP2004228387A (en) * 2003-01-23 2004-08-12 Koha Co Ltd Light emitting device
JP2004254880A (en) * 2003-02-26 2004-09-16 Nippon Computer Network Kk Photopolymerization apparatus
JP2005044777A (en) * 2003-07-09 2005-02-17 Nichia Chem Ind Ltd Lighting device

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