JP2006249558A - Vapor deposition apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To deposit thin films free of defects due to droplets. <P>SOLUTION: When a filter apparatus 20 of a rotor blade type is arranged between a vapor deposition source 30 and a film-deposition object 5, and is rotated around a revolving axis 25, giant particles of a large mass and low flying speed collide against blade members 22 of the filter apparatus 20 and minute particles of a small mass and high flying speed pass between the blade members 22, arriving at the film-deposition object 5. Since the droplets are removed, flat thin films free of defects can be obtained. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a technique for forming a thin film, and more particularly to a technique for forming a thin film using a coaxial vacuum arc deposition source.

The code | symbol 101 of FIG. 10 has shown the vapor deposition apparatus of the prior art.
The vapor deposition apparatus 101 has a vacuum chamber 111, and a coaxial vacuum arc vapor deposition source 130 is disposed inside the vacuum chamber 111.

  The coaxial vacuum arc deposition source 130 includes a cylindrical anode electrode 131, a cathode electrode 143 disposed inside the anode electrode 131, and a trigger electrode 142 disposed in the vicinity of the cathode electrode 143. A disc-shaped insulator 141 made of alumina is sandwiched between the trigger electrode 142 and the cathode electrode 143 and is fixed with a screw (not shown). The anode electrode 131 is grounded, and the cathode electrode 143 and the trigger electrode 142 are connected to the power source 140.

  A vacuum exhaust system 119 is connected to the vacuum chamber 111. The vacuum evacuation system 119 is operated, the inside of the vacuum chamber 111 is evacuated, a pulse-like trigger voltage is applied to the trigger electrode 142 in a state where a voltage is applied between the anode electrode 131 and the cathode electrode 143 by the power source 140, and the trigger A side discharge occurs between the electrode 142 and the cathode electrode 143 through the side surface of the insulator 141, and this is called a trigger discharge. When the trigger discharge occurs, some of the electrons generated by the trigger discharge fly to the anode electrode side. By this trigger discharge, arc discharge is induced between the cathode electrode 143 and the anode electrode 131.

  Due to the arc discharge, a large arc current flows through the cathode electrode 143, and when the cathode electrode 143 is melted, particles of the vapor deposition material constituting the cathode electrode 143 are emitted into the anode electrode 131.

  The particles discharged into the anode electrode 131 receive a force from the magnetic field formed by the arc current and the electrons in the plasma formed by the discharge, and are discharged into the vacuum chamber 111.

  A holder 112 is disposed in the flight direction of the emitted particles. A film formation target 115 such as a semiconductor wafer is disposed on the holder 112, and when the deposition material particles reach the surface of the film formation target 115, a thin film grows.

  Since the arc current is supplied by discharging the capacitor, it disappears in a short time. A thin film having a desired film thickness can be grown by repeatedly charging the capacitor and inducing arc discharge by trigger discharge. During film growth, the holder 112 is rotated by a motor 117 and a rotating shaft 121 so that a thin film grown on the surface of the film formation target 5 has a uniform thickness.

In the coaxial vacuum arc deposition source 130 as described above, the film thickness of the thin film formed by one arc discharge can be controlled by the amount of charge of the capacitor, and the film thickness of the thin film obtained is per arc discharge. The film thickness and the number of discharges can be controlled.
Therefore, even if the film to be formed is a very thin film of about 1 to 2 nm, the film thickness accuracy is high.

  Further, since the flying speed of the particles is as fast as 10,000 m / sec (Document J, Vac. Sec. Jpn. (Vacuum Vol. 47, No. 9, 2004 p13), a very flat film can be formed (Ulvac). technical Journal No. 49 1998 p9).

  This feature is suitable for a process of laminating magnetic and nonmagnetic materials such as MRAM with a thin film of nm. For example, Co.FeNi / Ta / Py / Ir.Mn and the like must be stacked in nm, and can be stacked by using an apparatus equipped with four guns at this time. In particular, in the case of a coaxial vacuum arc deposition source, it is confirmed that the alloy ratio of the cathode material is preserved in the film even if the ratio is formed on the alloy of the cathode material, so that the alloy can be formed very easily. .

A vapor deposition apparatus using a coaxial vacuum arc vapor deposition source, a filter apparatus described later, and the like are described in, for example, the following documents.
JP 2003-282557 A JP 2004-18899 A Japanese Patent Laid-Open No. 10-30169 JP-A-8-176805 JP 2002-220655 A

  Although the conventional coaxial type vacuum arc deposition source apparatus can form a film with a thickness of nm with good control, there is a problem that a large amount of droplets are generated and the droplets are mixed into the thin film. This does not function as a device.

The particles emitted from the coaxial vacuum arc deposition source 130 include fine particles close to the atomic state, those generated in the liquid layer from the cathode material (about φ50 to 100 μm), and those generated in the liquid layer from the cathode material. There is a liquid layer that collides with the inner surface of the anode electrode and breaks into a small liquid layer (grain size: φ1 to 5 μm).
In the vapor deposition apparatus 101 of the prior art, each said particle | grain reaches | attains the surface of the film-forming target object 5, and causes a defect.

  An object of the present invention is to eliminate the large particles (droplets) that reach the film formation target without reducing the deposition amount, and to realize good controllability and flatness of nm.

In order to solve the above problems, the present invention includes a vacuum chamber, a vapor deposition source disposed in the vacuum chamber, and a holder in which a film formation target is disposed, and the vapor deposition source is a cylindrical anode. An electrode, a cathode electrode disposed in a region surrounded by the anode electrode, and a trigger electrode disposed in the vicinity of the cathode electrode, wherein the cathode electrode and the trigger electrode A trigger discharge is generated between them, an arc discharge is induced between the cathode electrode and the anode electrode, the cathode electrode is evaporated, vapor deposition material particles are released from the opening of the anode electrode, and are arranged in the holder A film forming apparatus for growing a thin film on the surface of a film forming object, wherein a filter device having a plurality of elongated blade members is disposed between the vapor deposition source and the holder, the blade members are moved, and a flying speed Is attached to the blade member is slow deposition material particles, flying speed is passed through a fast deposition material particles, is configured evaporation apparatus so as to reach the film-forming target surface.
Further, the present invention is the vapor deposition apparatus according to claim 1, wherein the vapor deposition source particle includes a plurality of the vapor deposition sources, and the vapor deposition material particles emitted from the vapor deposition sources are arranged so as to reach the same film formation target. In addition, the central axes of the openings of the respective vapor deposition sources are inclined at a predetermined angle, and the respective vapor deposition sources are arranged so that the vapor deposition material particles are incident on the film formation target from the respective vapor deposition sources at different angles. The vapor deposition apparatus in which the filter device is disposed between each vapor deposition source and the film formation target.
The blade member is a vapor deposition apparatus that is arranged radially about a rotation axis and configured to rotate about the rotation axis.
Further, according to the present invention, the impingement surface of the blade member with which the vapor deposition material particles collide is inclined with respect to the rotation axis of the rotation shaft, and the vapor deposition material particles that collide and are reflected by the collision surface are the vapor deposition source. It is the vapor deposition apparatus comprised so that it might return to the side.

  The present invention is configured as described above, and the blade member is moved so as to intersect the flight path of the particles of the substance constituting the cathode electrode, so that the particles having a low flying speed collide with the blade member and do not pass through. Particles faster than a predetermined flight speed pass and reach the film formation target surface.

  Since the object to be deposited is rotated about one rotation axis, it is preferable that the blade members are arranged radially about the rotation axis and rotated around the rotation axis so as to intersect with the particle flight path. .

  Since only minute particles reach the film formation target, a film free from defects due to droplets can be obtained.

The code | symbol 1 of FIG. 1 is the vapor deposition apparatus of this invention.
The deposition apparatus 1 includes a vacuum chamber 11 and one or more coaxial vacuum arc deposition sources 30a and 30b disposed in the vacuum chamber 11 (here, two deposition sources having the same structure are used). Is placed). The vacuum chamber 11 is made of an alloy such as stainless steel.

The internal structure of the coaxial vacuum arc deposition sources 30a and 30b is shown in FIG.
The coaxial vacuum arc vapor deposition sources 30a and 30b have an anode electrode 31 made of a cylindrical metal plate, a cathode electrode 43 made of a vapor deposition material formed in a columnar shape, and a trigger electrode 42 made of a ring-shaped metal. is doing.

  A bottom wall 50 is attached to the bottom surface of the anode electrode 31, and an insulating support member (hereinafter referred to as an insulator) 41 is disposed on the bottom wall 50. The insulator 41 has a cylindrical shape, and the cathode electrode 43 is attached to the tip of the insulator 41. The trigger electrode 42 is fitted into the insulator 41, and thus the trigger electrode 42 is mounted on the outer periphery of the insulator 41. The cathode electrode 43 and the trigger electrode 42 are separated from each other by a predetermined distance to ensure insulation.

  The cathode electrode 43 and the trigger electrode 42 are located inside the anode electrode 31 and are arranged so that the central axis thereof coincides with the central axis of the anode electrode 31. Reference numeral 49 indicates a central axis common to the cathode electrode 43, the trigger electrode 42, and the anode electrode 31.

  The positional relationship between the trigger electrode 42 and the cathode electrode 43 is such that the cathode electrode 43 is closer to the opening 32 than the trigger electrode 42.

  Inside the insulator 41, a straight linear wiring 45 is disposed along the central axis 49. The upper end of the straight line 45 is connected to the cathode electrode 43. The lower end protrudes from the bottom of the bottom wall 50 and is connected to a negative voltage side terminal of an anode power source 47 described later.

  The filter device 20 and the holder 12 are arranged in this order at a position outside the anode electrode 31 and facing the opening 32 of the anode electrode 31. That is, the filter device 20 is disposed between the holder 12 and the coaxial vacuum arc deposition sources 30 a and 30 b, and the central axis 49 intersects both the filter device 20 and the holder 12.

FIG. 3 is a perspective view for explaining the filter device 20 and the holder 12.
The holder 12 has a disk shape, and the surface facing the filter device 20 is configured so that one or more substrates can be held at positions that do not overlap the center of the holder 12. Reference numeral 5 in FIG. 3 denotes a film formation target (substrate) held by the holder 12.

  A hollow rotary shaft 13 is connected to the center position of the holder 12 on the back side of the holder 12. The central axis 25 of the hollow rotary shaft 13 is perpendicular to the surface of the holder 12, and when the hollow rotary shaft 13 is rotated with the central axis 25 as the rotational axis, the substrate held by the holder 12 becomes the central axis. 25 is configured to pivot and move in parallel with a plane perpendicular to 25. That is, each film formation target 5 rotates about the center of the holder 12.

The filter device 20 is a rotary blade type, and includes a rotary shaft 21, a plurality of elongated blades 22, and a ring 23.
The rotating shaft 21 passes through the center of the ring 23, and one end of each blade 22 is fixed to the position on the center of the ring 23 of the rotating shaft 21 directly or via a hub (not shown).

  The other end of each vane plate 22 is connected to the ring 23. The plane on which the ring 23 is located and the rotation shaft 21 are arranged so as to be vertical. Therefore, the rotation axis of the rotation shaft 21 and the center axis of the ring 23 coincide with each other, and the blades 22 are arranged radially about the rotation shaft 21.

  A fan-shaped gap 24 is formed between the adjacent blades 22 and the blades 22 so that particles of vapor deposition material to be described later can pass through the gap 24.

  The rotary shaft 21 is inserted through the hollow rotary shaft 13, and the central axis 25 of the hollow rotary shaft 13 is also the rotary axis of the rotary shaft 21 and the central axis of the ring 20. The rotating shaft 21 and the hollow rotating shaft 13 can be rotated in the same direction or in different directions, and can be rotated at the same rotational speed or at different rotational speeds. Reference numerals 17 and 14 in FIG. 1 denote motors that rotate the rotating shaft 21 and the hollow rotating shaft 13 separately.

  The coaxial vacuum arc vapor deposition sources 30a and 30b are disposed so that the opening 32 of the anode electrode 31 faces the center of the filter device 20 and the ring 23, and is held by the holder 12 when the holder 12 rotates. The film formation target 5 is configured to alternately pass through the positions facing the openings of the anode electrodes 31 of the two coaxial vacuum arc deposition sources 30a and 30b.

  A power supply device 40 is disposed outside the vacuum chamber 11. The power supply device 40 includes an arc power supply 47, a trigger power supply 46, and a capacitor unit 48. The anode electrode 31 and the vacuum chamber 11 are connected to the ground potential, the anode electrode 31 is connected to the arc power supply 47, and the trigger electrode 42 is connected to the trigger power supply 46.

  A negative voltage is applied to the anode electrode 31 and a positive voltage is applied to the trigger electrode 42 by the arc power supply 47 and the trigger power supply 46.

  A process of forming a thin film on the surface of the film formation target 5 using the vapor deposition apparatus 1 will be described. In the following example, two coaxial-side arc vapor deposition sources 30a and 30b are operated together, but only one may be operated.

  First, an evacuation system 19 connected to the vacuum chamber 11 is operated, the vacuum chamber 11 is evacuated to a predetermined pressure, and a film formation target is carried into the vacuum chamber 11 while maintaining a vacuum atmosphere. 12 to hold.

  Reference numeral 5 denotes a film formation target object held by the holder 12, and the film formation target object 5 is, for example, a semiconductor wafer.

  When the anode power supply 47 and the trigger power supply 46 in the power supply 40 are operated and a negative voltage (−100 V) is applied to the cathode electrode 43 and a pulsed trigger voltage (+3.4 kV) is applied to the trigger electrode 42, the trigger A trigger discharge (creeping discharge) is generated on the surface of the insulator 41 between the electrode 42 and the cathode electrode 43, and electrons are generated from the crossing point of the cathode electrode 43 and the insulator 41. The electrons run along the creeping surface of the insulator 41. Electrons fly to the anode electrode 31.

  When the discharge withstand voltage between the anode electrode 31 and the cathode electrode 43 decreases due to electrons emitted to the anode electrode 31 side, arc discharge occurs between the anode electrode 31 and the cathode electrode 43.

  When an arc discharge occurs, a large arc current flows through the cathode electrode 43, the cathode electrode 43 melts, and a large amount of charged particles, neutral particles, and electrons of the vapor deposition material constituting the cathode electrode 43 are emitted into the anode electrode 31. The

  By discharging the capacitor (8800 μF) in the capacitor unit 48, the arc current of 1400 A to 2000 A is maintained for about 1 msec.

  Of the particles emitted into the anode electrode 31, electrons are attracted to the anode electrode 31, and positive charged particles receive a repulsive force from the anode electrode 31.

  Even if they have a positive charge, particles with a large mass (charged particles with a small charge / mass value) and neutral particles collide with and adhere to the anode electrode 31, but some of them collide with small pieces during the collision. Decomposes and separates from the wall surface of the anode electrode 31.

  When the arc current flows through the linear wiring 45, a magnetic field is generated. Due to the influence, electrons emitted to the internal space of the anode electrode 31 receive Lorentz force by the magnetic field formed by the current flowing through the cathode electrode, and It is discharged from the opening 32 into the vacuum chamber 11 (outside the anode electrode 31). On the other hand, positive charged particles are attracted to the emitted electrons and are also emitted into the vacuum chamber 11 from the opening 32.

The emitted particles travel toward the filter device 20 and fly parallel to the central axis 25 of the anode electrode 31 and the cathode electrode 43.
The particles released into the vacuum chamber 11 include giant particles such as those in a liquid layer and minute particles close to atoms.

  The rotating shaft 21 and the hollow rotating shaft 13 are rotated separately and independently, and the holder 12 rotates slowly and the filter device 20 rotates faster than the holder 12.

  The filter device 20 and the holder 12 are positioned on an extension of the central axis 25 of the anode electrode 31, and the particles discharged into the vacuum chamber 11 fly toward the filter device 20, so that the particles are the blade members 22. It penetrates into the gap 24 between them.

  Each blade member 22 has a certain length L in the direction along the central axis 49 of the anode electrodes 30 a and 30 b and the cathode electrode 43. This length L is the thickness of the gap 24 between the blade members 22, and particles that have entered the gap 24. If it does not collide with the blade member 22 while passing through the distance of the length L, it reaches the surface of the film formation target 5 at the back surface position of the filter device 20. On the other hand, when the blade member 22 collides, the collided particles adhere to the blade member 22 or rebound, and cannot reach the film formation target 5.

Since particles with a small mass fly at high speed, most of the fine particles pass through the filter device 20 and reach the film formation target 5, whereas particles with a large mass have a low flying speed, and the blade member 22 Easy to collide.
By setting the rotational speed of the blade member 22, particles having a desired flight speed or less can collide with the blade member 22.

  There is a correlation between the flight speed and the mass, and the smaller the mass, the higher the speed. Therefore, by setting the rotation speed of the blade member 22, only particles less than the desired mass can reach the film formation target 5.

  FIG. 4 is a schematic diagram of the collision. Among the particles emitted from the anode electrode 31, the giant particles 35 collide with the surface of the blade member 22 facing forward in the traveling direction, while the minute particles 34 have the gap 24. Is shown to reach the surface of the film formation target 5.

  When the giant particles 35 collide with the surface of the blade member 22 facing forward in the traveling direction, not all of the giant particles 35 adhere to the blade member 22, and some of the giant particles 35 leave the blade member 22 or recoil particles. May occur.

  The symbol θ in the figure indicates an angle formed by the surface of the blade member 22 facing forward in the traveling direction and the plane of rotation of the blade member 22, and θ may be 90 °, but 0 <θ <90 °. If set, the particles generated by the collision are bounced back to the vapor deposition sources 30 a and 30 b and do not reach the film formation target 5.

  The flight speed of fine particles is 10,000 m / sec, and the flight speed of large particles is 40-50 m / sec. When the blade member 22 is rotated at 3000 rpm, only fine particles pass, and particles having a large mass collide with and adhere to the blade member 22. The deposit moves toward the center by the centripetal force of the blade member 22.

  The arc current is supplied from the capacitor unit 48, and when the discharge of the capacitor is completed, the arc current disappears. Therefore, the time during which the arc current flows is short. The capacitor unit 48 is charged by the arc power supply 47 after discharging.

  After the capacitor unit 48 is charged up to a predetermined voltage, it is discharged again by trigger discharge at the trigger electrode 42 and when an arc current is passed, a thin film is laminated on the surface of the film formation target 5. Therefore, a thin film having a desired film thickness can be grown on the surface of the film formation target 5 by repeatedly charging and triggering the capacitor unit 48 a desired number of times.

  FIG. 8 is a surface electron micrograph of a thin film formed by a conventional vapor deposition apparatus 101. Protrusions due to droplets can be seen.

  FIG. 9 is a surface electron micrograph of a thin film formed by the vapor deposition apparatus 1 of the present invention. A flat thin film without protrusions is obtained.

  The cathode electrode 43 can be made of a conductive material capable of causing trigger discharge or arc discharge, such as metals such as tungsten, tantalum, aluminum, and titanium, and alloys thereof.

A reactive gas can be introduced into the vacuum chamber 11 or the anode electrode 31 to form a thin film of reaction product. For example, in addition to oxygen and nitrogen, a compound gas such as methane can be used.
The anode electrode 31 has a cylindrical shape, but may be a square or hexagonal cylinder.

  In the above example, the two coaxial vacuum arc deposition sources 30a and 30b are arranged one on each side on both sides of the central axis 25. However, a larger number of coaxial vacuum arc deposition sources can be used for large substrates. . FIG. 5 is an example in which six coaxial vacuum arc deposition sources 30c are arranged on one side.

  Although the above showed the Example formed into a film on the board | substrate etc., the irradiation target object is not limited to a flat board | substrate, There may be an unevenness | corrugation.

Reference numeral 2 in FIG. 6 indicates a film forming apparatus for forming a thin film on the film forming target 6 having an uneven surface.
The film forming apparatus 2 includes a vacuum chamber 51, a holder 52 is disposed inside the vacuum chamber 12, and the film formation target 6 is held by the holder 52.

A plurality of coaxial type vacuum arc vapor deposition sources 30c and 30d having the internal structure of FIG. 2 are arranged at a position opposite to the holder 52 inside the vacuum chamber 51.
The openings of the coaxial arc vapor deposition sources 30c and 30d are respectively directed to the film formation target 6, and the vapor deposition material particles emitted from the plurality of coaxial arc vapor deposition sources 30c and 30d are formed on the film formation target 6. To reach.

  Between the coaxial arc vapor deposition sources 30c and 30d and the film formation target 6, filter devices 20c and 20d having the same structure as the filter device 20 of the above-described embodiment are disposed, and the rotation of the filter devices 20c and 20d is performed. Thus, particles having a large mass are removed, and only vapor deposition material particles having a small mass can reach the film formation target 6.

The central axes of the coaxial arc vapor deposition sources 30c and 30d are not parallel to each other and are inclined at a predetermined angle. Therefore, particles having a small mass emitted from the coaxial arc vapor deposition sources 30c and 30d and passed through the filter devices 20c and 20d enter the film formation target 6 at different angles.
Here, the cathode electrodes 43 of the coaxial arc vapor deposition sources 30c and 30d are made of the same vapor deposition material, and a thin film having a uniform film quality is formed.

Reference numeral 3 in FIG. 7 shows a film forming apparatus of another example of the present invention. A holder 62 is disposed inside the film forming apparatus 3.
Reference numeral 7 in the figure is a film formation target made of a convex mold for producing a convex lens, and is held by a holder 62.

  A filter device 20 g is disposed at a position facing the holder 62, and one or more filter devices 20 e and 20 f are also disposed on the side of the holder 62.

One to a plurality of coaxial arc vapor deposition sources 30e ₁ , 30e ₂ , 30g and 30f are arranged behind the filter devices 20e, 20f and 20g. Here, two filter devices are arranged on the side surface and one on the bottom surface, and two coaxial arc vapor deposition sources 30e ₁ and 30e ₂ are arranged behind the filter device 20e on the bottom surface.

The openings of the respective coaxial arc vapor deposition sources 30e ₁ , 30e ₂ , 30g and 30f are directed to the film formation object 7 on the holder 62, and from the respective coaxial arc vapor deposition sources 30e ₁ , 30e ₂ , 30g and 30f. Among the emitted vapor deposition material particles, particles having a small mass that have passed through the rotating filter devices 20e, 20g, and 20f reach the film formation target object 7 from multiple directions, and a thin film is formed on the surface of the film formation target object 7. .

L _{1 to} L ₃ are 16 to 20 cm. As a result, the plasma spreads uniformly over the φ portion by about 10 cm, so even a convex member can be irradiated uniformly.

  The present invention can be used for semiconductor gate electrodes and gate insulating films, barrier layers for trenches, film formation of magnetic materials for magnetic devices, and coating of mechanical parts. In addition, a carbon nanotube catalyst layer can be formed.

  A single layer or a plurality of laminated thin films without droplets by using a coaxial vacuum arc vapor deposition source in which one or a plurality of coaxially arranged rotating shafts are arranged coaxially with the filter device of the present invention and the holder is arranged behind the holder. Can be formed.

The figure for demonstrating the vapor deposition source of this invention Sectional drawing for demonstrating the structure of a vapor deposition source The perspective view for demonstrating the structure of a filter apparatus Partial enlarged view for explaining the operation of the filter device Vapor deposition equipment with many vapor deposition sources The figure for demonstrating the vapor deposition apparatus of the other example of this invention The figure for demonstrating the vapor deposition apparatus of the other example of this invention Surface electron micrograph of a thin film formed by a conventional deposition apparatus Surface electron micrograph of thin film formed by vapor deposition apparatus of the present invention Conventional deposition equipment

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Deposition apparatus 5 ... Deposition object 11 ... Vacuum chamber 12, 52, 62 ... Holder 20 ... Filter apparatus 21 ... Rotary shaft 22 ... Blade member 25 ... Rotary axis 30 ... Deposition source 31 …… Anode electrode 42 …… Trigger electrode 43 …… Cathode electrode

Claims (4)

A vacuum chamber, a vapor deposition source disposed in the vacuum chamber, and a holder in which a film formation target is disposed,
The deposition source is
A cylindrical anode electrode;
A cathode electrode made of a vapor deposition material and disposed in a region surrounded by the anode electrode;
A trigger electrode disposed in the vicinity of the cathode electrode;
A trigger discharge is generated between the cathode electrode and the trigger electrode, an arc discharge is induced between the cathode electrode and the anode electrode, the cathode electrode is evaporated, and vapor deposition material particles are discharged from the opening of the anode electrode. A film forming apparatus for releasing and growing a thin film on the surface of a film forming object disposed on the holder,
A filter device having a plurality of elongated blade members between the vapor deposition source and the holder;
A vapor deposition apparatus configured to move the blade member, attach vapor deposition material particles having a low flight speed to the blade member, pass vapor deposition material particles having a high flight speed, and reach the film formation target surface. 2. The vapor deposition apparatus according to claim 1, wherein the vapor deposition material particle is disposed so as to reach the same film formation target object, the vapor deposition material particles emitted from each of the vapor deposition sources.
The central axes of the openings of the respective vapor deposition sources are inclined at a predetermined angle with each other, and the respective vapor deposition sources are arranged so that the vapor deposition material particles are incident on the film formation target from the respective vapor deposition sources at different angles,
The vapor deposition apparatus according to claim 1, wherein the filter device is disposed between each vapor deposition source and the film formation target.   The vapor deposition apparatus according to claim 1, wherein the blade members are arranged radially about a rotation axis and configured to rotate about the rotation axis.   The impingement surface of the blade member with which the vapor deposition material particles collide is inclined with respect to the rotation axis of the rotation shaft, and the vapor deposition material particles that collide with the collision surface and reflected are returned to the vapor deposition source side. The vapor deposition apparatus of Claim 3 comprised.

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