JPH1030169A - Coating forming device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a formed coating of high quality at a high coating forming rate by energy selection. SOLUTION: This device is the one having plural vane parts 20, in which these plural vane parts are faced on the inside of the interval between the body 6 to be formed and a scattering particle generating means continuously generating scattering particles (e.g. a target 10), and having a mechanical type chopper 16 removing scattering particles both on the side of high energy and on the side of low energy. In this way, continuous coating formation is made possible while the reduction of the defects of coating caused by resputtering or the like and reduction is droplets and the improvement of the crystallinity of the coating are attained. Concretely, while the vane parts 20 are overlapped with each other by a prescribed width (d) on a view from the scattering direction, they shall obliquely be arranged by prescribed angles θ, respectively.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming apparatus for forming various materials using an energy beam or the like.

[0002]

2. Description of the Related Art Particles formed by a physical film forming method such as a so-called laser ablation method or a vacuum evaporation method have a wide kinetic energy distribution. The kinetic energy of the deposited particles is an important factor that determines the physical properties of the formed thin film. High-energy particles scatter at high speed and cause re-sputtering or the like of the formed film, causing defects, and low-speed, low-energy particles have low migration on the substrate and cause a decrease in crystallinity of the formed film. Also,
In laser ablation and the like, it is known that low-speed droplets and the like are generated by scattering of a mass of particles in a droplet shape, thereby lowering the surface morphology of a formed film.

As a method of removing such high-energy particles and low-energy particles and limiting the energy width of scattered particles in order to improve the film quality, there is a mechanical method disclosed in, for example, JP-A-61-210174. And an electrically performed method disclosed in, for example, Japanese Patent Application Laid-Open No. 24-536. Of these, the latter electrical method is effective only for ionized particles, and has limited applications. The former mechanical method can be said to have a wide range of application in this sense since it does not matter whether or not the scattered particles are ionized.

[0004]

However, this conventional mechanical energy selection method selects film-forming particles having different evaporation rates by means of a vertically arranged partition plate mechanism. Can be captured,
There was a problem that high energy and high speed particles could not be completely captured.

On the other hand, the present inventors have proposed a method of capturing both low-speed particles and high-speed particles by irradiating a target with a pulsed laser beam and setting the target on a rotating chopper (disk) that rotates in synchronization with the target. A method has been proposed in which only the particles having the optimum speed are allowed to pass through the slit (see Japanese Patent Application Laid-Open No. 6-93445). However, with this method,
The method is effective only when the generation of scattered particles is pulsed, and is not suitable for applications in which particles are continuously scattered to obtain a high film formation rate.

The present invention has been made in view of such circumstances, and has as its object to provide a film forming apparatus capable of obtaining a high quality formed film at a high film forming rate.

[0007]

In order to solve the above-mentioned problems of the prior art and achieve the above-mentioned object, a film forming apparatus of the present invention includes a plurality of blades, which are attached to an adherend. And the scattering particle generation means (for example, a laser irradiation device and a target) that continuously generates the scattering particle group, and removes the scattering particles on the high energy side and the low energy side from the scattering particle group. It is characterized by having a mechanical chopper.

The scattered particles generated by the scattered particle generating means and flying toward the adherend are removed on the way by a plurality of blades on both the high energy side and the low energy side. Accordingly, film defects due to re-sputtering of the formed film are suppressed, and the crystallinity of the formed film is also improved. Also,
Droplets are also suppressed, and good surface morphology is obtained. Thereby, high-quality continuous film formation can be performed.

More specifically, the plurality of blades may be arranged obliquely at a predetermined angle, for example, while overlapping each other by a predetermined width in a projection plane viewed from the scattered particle generation means in the direction of the adherend.

When the mechanical chopper is constituted by a shaft rotating body having blades around it, the conditions for selectively passing the particles by the mechanical chopper are that the maximum speed Vmax that can pass is rωh / d. , Minimum speed V that can pass
min can be expressed as rωh / (2W + d). Here, r is the distance from the center of the rotation axis to the tip of the blade, ω is the rotational angular velocity of the mechanical chopper, h is the height of the blade in the direction perpendicular to the projection plane, and d is the overlap of the blade on the projection plane. The alignment width W indicates the arrangement interval between the blades on the projection plane.

[0011]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a film forming apparatus according to the present invention will be described in detail with reference to the drawings. As described above, the present invention is a film forming apparatus capable of removing the high-energy side and the low-energy side of film-forming particles and adjusting the energy to a predetermined range, and includes a vacuum deposition method, sputtering, and laser ablation. It is applied to almost all the physical film forming methods represented by the method described above. In vacuum deposition, there is no limitation on a heating method such as resistance heating or electron beam heating.
Also, in sputtering, the applied voltage may be any of direct current, alternating current, and high frequency, and there is no limitation on the introduced gas. As the introduced gas, an inert gas is usually used, but not limited thereto. Reactive sputtering may be used, and further, an ion plating method may be used.

In particular, the present invention is suitable for a physical film forming method in which an energy beam such as laser ablation is applied to a target so that the energy beam is emitted. This is because in laser ablation, a laser beam having a short wavelength is applied to a target to non-thermally cut off the bonding of constituent atoms to fly particles that have become plasma. At this time, the kinetic energy of the scattered particles is reduced from nearly zero to 100 eV. This is because the energy selection according to the present invention is particularly effective. This kind of physical film formation method also includes a method of irradiating an ion beam. The type of the laser beam is not limited, and the beam may be applied regardless of whether it is continuous or pulsed.

Hereinafter, a laser ablation apparatus capable of continuous laser beam irradiation will be described as a more specific embodiment. As shown in FIG. 1, the film forming apparatus 2 includes a vacuum chamber 4 maintained at a high vacuum by a vacuum exhaust device (not shown). In the vacuum chamber 4, an adherend 6 on which a predetermined thin film is to be formed, for example, a substrate as shown in the drawing is mounted on a jig or the like (not shown). As a result, the substrate is held so as to be able to rotate or revolve, with the adhered surface facing downward. Adherend 6
In this case, a three-dimensional structure including a polyhedron having a plurality of adherend surfaces may be used instead of a configuration in which a film is formed on only one surface as shown in the drawing. In this case, the adherend 6 is rotated three-dimensionally. May be held as possible.

On the other hand, a target 10 is provided below the vacuum chamber 4 at a predetermined distance from the adherend 6 as a component of the scattered particle generating means 8. The scattered particle generating means 8 is for continuously generating scattered particles scattered toward the adherend 6, and in the vacuum chamber 4, in addition to the target 10, the target is rotated or moved in position. Mechanism (not shown). Another component of the scattered particle generating means 8 provided outside the vacuum chamber 4 is a viewing window 4.
A lens 12 for narrowing a laser beam and focusing on a target 10 and a laser irradiation device 14 are arranged in this order from the a side.

Between the adherend 6 and the target 10, scattered particles generated on the surface of the target 10 by laser beam irradiation and scattered toward the adherend 6 (indicated by an arrow A in the figure) There is provided a passage selecting means for removing only the high-energy side and the low-energy side, thereby selectively passing only the scattered particles having a kinetic energy in a predetermined range.

As a specific configuration of the passage selecting means,
It suffices that each of them has an oblique partition plate-like portion that moves at a predetermined speed while partially overlapping each other. The direction of movement of the passage selection means capable of selecting energy must be the direction of the anti-inclination of the partition plate portion, but it does not matter whether it is moved linearly or in the circling direction. However, in the sense that it is easy to obtain smooth movement or a constant speed, it is preferable to move in the circumferential direction.

In this sense, in the embodiment shown in FIG.
A mechanical chopper 16 is used as passage selection means.
The mechanical chopper 16 includes a shaft 18 connected to driving means (not shown) and rotating at a predetermined speed, and a blade 20 projecting obliquely outward around the shaft 18.

More specifically, in the projection plane perpendicular to the direction in which the center of the adherend 6 is viewed from the target 10 which is the particle generation portion of the scattered particle generation means 8 (hereinafter referred to as the scattering direction), each lower end is Each of the blades 20 has a predetermined angle θ with respect to the projection plane when it comes into the course of the scattered particle group A.
Is provided. That is, the blade portion 20 having such a configuration is used.
Passes through the path of the scattered particles A scattered from the target 10 toward the adherend 6 at a predetermined speed (at a predetermined time interval) at a predetermined angle θ with respect to the projection plane. In many cases, the optimum value of the rotation speed of the shaft 18 is determined based on the inclination angle θ. In this case, the inclination angle θ is determined in consideration of the rotatable range of the shaft portion 18 and the like. Further, the respective blade portions 20 overlap each other by a predetermined width when viewed in the projection plane. The overlap width d has a particularly large effect on the filter performance on the high energy side as shown by the following equation.

The mechanical chopper 16 having such a configuration is as follows.
This is a mechanical energy selecting device that attaches and captures high-speed or low-speed scattered particles falling outside a predetermined range to the blade while continuously moving the blade 20 at a predetermined speed in the projection plane. As is well known, if the scattering velocity of a particle having a mass m is V, its kinetic energy E is m
It expressed a V ^2/2. Usually, in a physical film forming method such as laser ablation, a metal or the like is coated, so that the scattering velocity V
Is limited on the high-speed side and the low-speed side as shown in FIG. 2, the kinetic energy range can be easily regulated.

In the mechanical chopper 16 of this embodiment, the maximum velocity Vmax and the minimum velocity Vmin of the passable particles shown in FIG. 2 are given by the following equations (1) and (2), respectively. Vmax = rωh / d Equation (1) Vmin = rωh / (2W + d) Equation (2) Here, as shown in FIG. 1B, r is the distance from the center of the rotating shaft to the tip of the blade, and ω is The rotational angular velocity of the mechanical chopper, h, is the blade height in the direction perpendicular to the projection plane, d.
Represents the overlapping width of the blades on the projection plane, and W represents the arrangement interval between the blades on the projection plane.

By the operation of the mechanical chopper 16, the mechanical chopper 1 whose energy is adjusted to a predetermined width is used.
As shown in FIG. 1A, the scattered particle group B after 6 passes
The film is formed on the adherend 6. Therefore, the formed film is of high quality.

[0022]

EXAMPLES Hereinafter, examples of the present invention will be described more specifically. In the present embodiment, in order to investigate the effect of improving the film quality by the mechanical chopper 16 of FIG. 1 in the above embodiment, the difference in the kinetic energy distribution of the scattered particles due to the presence or absence of the mechanical chopper 16 (that is, the flying particles of FIG. Group A
And B) and the surface roughness Ra.

The specifications of the mechanical chopper 16 used here were r = 200 mm, h = 20 mm, W = 1 mm, d =
1 mm, ω = 1873 rad / sec. Also,
Au (mass; 3.27 × 10
The ^-25 kg), on its irradiated light using excimer laser beam (wavelength = 248 nm), respectively, were irradiated focused excimer laser beam with a lens 12 on the target 10.

The kinetic energy distribution Figure 3, prior to restricting the kinetic energy range with a mechanical chopper 16, a kinetic energy distribution diagram of scattering particles that remain released from the target 10. The kinetic energy was measured with a quadrupole mass spectrometer installed at a position about 1 m above the target 10. The vertical axis indicates the ion current value detected when Au ions plasmatized by laser light irradiation reach the quadrupole mass spectrometer, and the kinetic energy on the horizontal axis indicates that this Au ion is a quadrupole mass spectrometer. It is calculated from the time it takes to reach the total. In the drawing, the base current is indicated by a broken line. As can be seen from the figure, the kinetic energy of Au before the mechanical chopper 16 is inserted shows a very wide distribution of about 1 to 110 eV.

On the other hand, FIG. 4 is a kinetic energy distribution diagram obtained by the same measurement as in FIG. 3 when the mechanical chopper 16 shown in FIG. 1 and having the above specifications is inserted in the course of Au. In this example, it can be seen that Au particles of 4.9 to 62.3 eV are detected. Therefore, Au particles of 1 to 4.8 eV on the low energy side and Au particles of about 62.4 to 110 eV on the high energy side are captured by the blade 20 of the rotary chopper 16 and are excluded from the scattering path of the Au particles. Was.

Table 1 shows the maximum passing energy value Emax and the minimum passing energy value Emin by comparing these experimental values with the calculated values based on the above equations (1) and (2).

[Table 1]

As a comparative example, FIG. 5 shows a kinetic energy distribution when the blade section 20 is set up substantially in parallel with the scattering direction of the Au particles as in the conventional case. Comparing this figure with FIG. 3, it can be seen that although Au particles of 10.8 eV or less were excluded from the course, Au particles on the high energy side were not eliminated.

[0028] One of the effects of surface roughness kinetic energy selection, the surface roughness Ra
Improvement. Table 2 shows a comparison of Ra values corresponding to FIGS. 3 to 5 when no energy is selected, when the high energy side and the low energy side are removed, and when only the low energy side is removed. Ra
The value was measured by using a surface roughness meter and taking the average value of the roughness center of the surface of the Au film coated on the substrate.

[Table 2]

From this table, it can be seen that in the case of the present invention shown in FIG. 4, the surface roughness can be greatly improved, and even in the case of FIG. 5 in which only the low energy side is eliminated, the Ra value can be considerably reduced. Thus, it can be easily inferred that a slow droplet or the like is a factor that deteriorates the surface roughness.

This can be confirmed by actually observing the film surface. FIG. 6 shows FIG.
FIG. 7 shows an SEM photograph in the case of the present invention in which the high energy side and the low energy side in FIG. By comparing these SEM photographs,
It was confirmed that the droplet controls the Ra value.

Table 3 shows the result of counting the number of the droplets. According to the present invention, 2 per unit area
Droplet generation was suppressed by more than an order of magnitude.

[Table 3]

Conclusion According to the present invention, it has been confirmed that flying particles on both the high energy side and the low energy side can be eliminated from the course of the particles. At the same time, the results of calculations and experiments were compared. In this experiment, almost satisfactory results were obtained although the filter properties were slightly inferior to those predicted by the calculated values. In particular, according to the present invention, the Ra value was significantly improved, and it was confirmed that the droplet governed the Ra value.
In addition, the improvement of the droplet was a large one exceeding two digits.

[0033]

As described above, according to the film forming apparatus of the present invention, a high quality formed film can be obtained by various physical film forming methods. In addition, since continuous film formation is possible, it has become possible to provide a film formation apparatus having a high quality and a relatively high film formation rate.

[Brief description of the drawings]

FIG. 1 is a diagram according to an embodiment of the present invention, wherein FIG.
FIG. 2B is a schematic configuration diagram illustrating a main part of the film forming apparatus of the present invention, and FIG. 2B is a cross-sectional view of a blade along a direction in which film forming particles are scattered, showing main part dimensions of a mechanical chopper.

FIG. 2 is a diagram showing a concept of performing energy selection for film-forming particles.

FIG. 3 is a kinetic energy distribution diagram of Au particles when energy selection is not performed as an evaluation criterion of an example of the present invention.

FIG. 4 is a kinetic energy distribution diagram of Au particles according to an example of the present invention.

FIG. 5 is a kinetic energy distribution diagram of Au particles when a blade is set up as in the conventional example as a comparative example with respect to FIG.

FIG. 6: SEM of the film surface when no energy is selected
It is a photograph.

FIG. 7 is an SEM photograph when the flying particles on the high energy side and the low energy side are excluded according to the present invention.

[Explanation of symbols]

 2 ... film forming apparatus, 4 ... vacuum chamber, 4a ... viewing window, 6 ... adherend, 8 ... scattered particle generating means, 10 ... target, 12 ... lens, 14 ... laser irradiation apparatus, 16 ... mechanical chopper, 18 ... shaft part (shaft rotating body), 20 ... blade part.

Claims (3)

[Claims] 1. An adherend, and scattered particle generating means disposed at a predetermined distance from the adherend and continuously generating scattered particles scattered toward the adherend. In the film forming apparatus, a plurality of blades are provided, and the plurality of blades are made to face within an interval between the adherend and the scattered particle generating means, and a high energy side and a low energy side from the scattered particle group are provided. A film forming apparatus comprising a mechanical chopper for removing both flying particles. 2. The plurality of blades are arranged obliquely at a predetermined angle while overlapping each other by a predetermined width in a projection plane viewed from the scattered particle generation unit in a direction toward an adherend. 3. The film forming apparatus according to item 1. 3. The mechanical chopper is constituted by a shaft rotating body having the blades around it, and a scattered particle group having a speed higher than a maximum passing speed Vmax of the following equation (1):
3. The film forming apparatus according to claim 2, wherein the scattered particles that are slower than the minimum passing speed Vmin are captured together. Vmax = rωh / d Expression (1) Vmin = rωh / (2W + d) Expression (2) where r is the distance from the center of the rotation axis to the tip of the blade, ω
Represents the rotational angular velocity of the mechanical chopper, h represents the blade height in the direction perpendicular to the projection surface, d represents the overlapping width of the blades on the projection surface, and W represents the arrangement interval between the blades on the projection surface. .