JP2006245446A - Resist peeling and removing device - Google Patents

Resist peeling and removing device Download PDF

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JP2006245446A
JP2006245446A JP2005061765A JP2005061765A JP2006245446A JP 2006245446 A JP2006245446 A JP 2006245446A JP 2005061765 A JP2005061765 A JP 2005061765A JP 2005061765 A JP2005061765 A JP 2005061765A JP 2006245446 A JP2006245446 A JP 2006245446A
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nozzle
substrate
resist
spraying
processing chamber
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JP4542448B2 (en
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Noriyo Tomiyama
憲世 冨山
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Future Vision Inc
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Abstract

<P>PROBLEM TO BE SOLVED: To improve a resist peeling effect by eliminating a decrease in the density of a peeling liquid. <P>SOLUTION: A resist peeling and removing device is equipped with a processing chamber 1; a substrate carrying device 2 which is installed across the processing chamber 1 and carries in and out a substrate; a nozzle mechanism 3 equipped with a 1st nozzle 4 which is installed in the processing chamber 1 and blows a peeling liquid to the surface of the substrate 13, and a 2nd nozzle 5 which is installed in the processing chamber 1 downstream from the 1st nozzle 1 in the carrying direction of the substrate 13 and blows steam; a peeling liquid heater 10 which heats the peeling liquid supplied to the 1st nozzle 4; a peeling liquid pressurizer 11 which pressurizes the peeling liquid; and a steam generator 12 which supplies the steam to the 2nd nozzle 5. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、半導体ウェハやガラス基板等の表面に機能性薄膜パターン等を形成するリソグラフィ工程で用いられるレジスト剥離除去装置に関する。   The present invention relates to a resist stripping and removing apparatus used in a lithography process for forming a functional thin film pattern or the like on the surface of a semiconductor wafer, a glass substrate or the like.

半導体デバイス、半導体装置や液晶表示パネル等の電子機器の製造においては、その製造プロセス中に被洗浄物である半導体ウェハやガラス基板に有するレジストを剥離してこれを除去する工程が必須である。レジストを剥離除去工程においては、製造工程中の配線や電極あるいは絶縁膜当の種々のパターンを形成するために用いたレジストを剥離液と水蒸気を用いて剥離除去する。   In the manufacture of electronic devices such as semiconductor devices, semiconductor devices, and liquid crystal display panels, it is essential to remove the resist on the semiconductor wafer or glass substrate that is the object to be cleaned during the manufacturing process. In the step of removing the resist, the resist used for forming various patterns such as wirings, electrodes or insulating films in the manufacturing process is removed by using a remover and water vapor.

しかし、従来のレジストを剥離除去では、一つのノズル内で水蒸気に剥離液を添加し混合して基板上のレジストに吹き付けることでレジストの剥離と除去を行っていた。この種のレジスト剥離除去に関する公知技術を開示したものとしては多数の文献があるが、特に複数のノズルを用いるという点で特許文献1、特許文献2を挙げる。   However, in the conventional resist stripping and removal, the resist is stripped and removed by adding a stripping solution to water vapor in one nozzle, mixing and spraying the resist on the substrate. There are a large number of documents disclosing known techniques related to this type of resist stripping, and Patent Documents 1 and 2 are particularly cited in terms of using a plurality of nozzles.

特許文献1には、スピンテーブル上の基板に温水ノズルと水蒸気ノズルを配置して洗浄するものが示されている。また、特許文献2には、水粒子発生機構(ノズル)と温水ノズルとを備えた食器洗浄機が開示されている。しかし、特許文献1と特許文献2の何れもレジスト剥離液が水蒸気で希釈されることによる問題を示唆するものでない。
特開2001−252550号公報 特開2000−189375号公報
Patent Document 1 discloses that a hot water nozzle and a water vapor nozzle are disposed on a substrate on a spin table for cleaning. Patent Document 2 discloses a dishwasher including a water particle generation mechanism (nozzle) and a hot water nozzle. However, neither Patent Document 1 nor Patent Document 2 suggests a problem due to the resist stripping solution being diluted with water vapor.
JP 2001-252550 A JP 2000-189375 A

一つのノズル内で水蒸気に剥離液を添加し混合して基板上のレジストに吹き付ける従来のレジスト剥離除去装置では、ノズル内で剥離液に水蒸気が溶解し、水蒸気の圧力に比例して剥離液の濃度が低下するため、剥離液に期待されるレジスト溶解効果が低下しレジスト剥離除去能力が低減する。すなわち、基板上のレジストの種類や膜厚、基板の搬送速度に応じて剥離液の濃度を設定しても、水蒸気による剥離液の濃度低下で所期の効果が得られない場合がある。   In a conventional resist stripping and removing apparatus in which a stripping solution is added to water vapor in one nozzle, mixed and sprayed onto the resist on the substrate, the water vapor is dissolved in the stripping solution in the nozzle, and the stripping solution is in proportion to the water vapor pressure. Since the concentration is lowered, the resist dissolution effect expected for the stripping solution is lowered, and the resist stripping removal ability is reduced. That is, even if the concentration of the stripping solution is set according to the type and film thickness of the resist on the substrate and the conveyance speed of the substrate, the desired effect may not be obtained due to a decrease in the concentration of the stripping solution due to water vapor.

本発明の目的は、剥離液の濃度が低下することによるレジスト剥離効果の低下がないレジスト剥離除去装置を提供することにある。   An object of the present invention is to provide a resist stripping / removing apparatus in which the resist stripping effect does not decrease due to a decrease in the concentration of the stripping solution.

本発明は、リソグラフィ工程において一方向に一定の速度で搬送される基板の表面に有するレジストを剥離して除去するレジスト剥離除去装置であって、基板上のレジストに対して、加熱された剥離液の吹き付けと、水蒸気の吹き付けとをこの順序で個別のノズルを用いて行う。また、レジストの種類や膜厚、基板の搬送速度に応じてこれら個別のノズルの基板搬送方向間隔を可変とすることで、移動する基板の任意の点で剥離液の吹き付けから水蒸気の吹き付けまでの剥離作用時間を制御する。   The present invention relates to a resist stripping / removing apparatus for stripping and removing a resist on a surface of a substrate that is transported at a constant speed in one direction in a lithography process, the stripping solution being heated against the resist on the substrate And steam are sprayed in this order using individual nozzles. In addition, by changing the substrate conveyance direction interval of these individual nozzles according to the resist type and film thickness, and the substrate conveyance speed, it is possible to perform from the spray of the stripping solution to the spray of water vapor at any point on the moving substrate. Control the peeling action time.

すなわち、本発明は、一方向に移動する前記基板の前記レジストを有する表面に近接して設置したレジスト剥離液を吹き付ける第1のノズルと、前記第1のノズルの下流に前記基板の前記レジストを有する表面に近接して設置した水蒸気を吹き付ける第2のノズルを備えた。   That is, the present invention provides a first nozzle for spraying a resist stripping solution installed in the vicinity of the surface having the resist of the substrate that moves in one direction, and the resist on the substrate downstream of the first nozzle. A second nozzle for spraying water vapor installed in the vicinity of the surface having the surface was provided.

また、本発明は、処理チャンバーと、この処理チャンバーを横断して設置され、基板を搬入し、搬出するための基板搬送装置と、処理チャンバー内に設置されて基板の表面に剥離液を吹き付ける第1のノズルと、処理チャンバー内で第1のノズルの基板の搬送方向下流側に設置されて水蒸気を吹き付ける第2のノズルとを具備したノズル機構と、第1のノズルに供給する剥離液を加熱する剥離液加熱器および剥離液を加圧する剥離液加圧器と、第2のノズルに水蒸気を供給する水蒸気発生器とを備えた。   The present invention also provides a processing chamber, a substrate transfer device installed across the processing chamber, for loading and unloading the substrate, and a first substrate installed in the processing chamber for spraying a stripping solution on the surface of the substrate. A nozzle mechanism including a first nozzle, a second nozzle that is disposed downstream of the first nozzle in the transport direction of the substrate in the processing chamber and blows water vapor, and heats the stripping solution supplied to the first nozzle A stripping solution heater that pressurizes the stripping solution, and a steam generator that supplies steam to the second nozzle.

また、本発明は、第1のノズルと第2のノズルの基板の搬送方向の間隔を可変とするノズル間隔制御機構を備えた。   The present invention also includes a nozzle interval control mechanism that makes the interval between the first nozzle and the second nozzle in the substrate transport direction variable.

また、本発明は、基板の搬送速度とそのレジストの膜質に応じた剥離液の吹き付け温度と吹き付け流量と吹き付け圧力、水蒸気の吹き付け密度と吹き付け圧力をパラメータとして、第1のノズルと第2のノズルの基板の搬送方向の間隔を可変とするノズル間隔制御機構に間隔制御信号を与えるノズル制御装置を備えた。   The present invention also provides the first nozzle and the second nozzle with the parameters of the spraying temperature, spraying flow rate and spraying pressure of the stripping solution, the spraying density of steam and the spraying pressure according to the substrate transport speed and the resist film quality. A nozzle control device for supplying an interval control signal to a nozzle interval control mechanism that makes the interval in the substrate transport direction variable.

本発明によれば、基板上のレジストに作用する剥離液の設定濃度が水蒸気で希釈されて変化することがないために、レジスト剥離性能が工程中に変化しない。また、基板の搬送速度とそのレジストの膜質に応じた剥離液の吹き付け温度と吹き付け流量と吹き付け圧力、水蒸気の吹き付け密度と吹き付け圧力をパラメータとして第1のノズルと第2のノズルの基板の搬送方向の間隔を可変とすることで、レジストの種類や膜厚等が異なる基板に容易に対応できる。   According to the present invention, the resist stripping performance does not change during the process because the set concentration of the stripping solution acting on the resist on the substrate is not diluted with water vapor. Further, the substrate transfer direction of the first nozzle and the second nozzle is determined by using as parameters the spraying temperature, spraying flow rate, spraying pressure, steam spraying density, and spraying pressure of the stripper according to the substrate transport speed and the resist film quality. By making the interval of the variable, it is possible to easily cope with substrates having different resist types, film thicknesses, and the like.

以下、本願発明を実施するための最良の形態を実施例の図面を参照して詳細に説明する。 Hereinafter, the best mode for carrying out the present invention will be described in detail with reference to the drawings of the embodiments.

図1は、本発明によるレジスト剥離除去装置の実施例1を説明する図である。また、図2は、図1に示したノズルの配置例を説明する斜視図である。図1及び図2において、実施例1のレジスト剥離除去装置は、処理チャンバー1内を基板搬送装置2が横断してレジスト14付着した被処理基板(以下、単に基板とも称する)13をレジスト付着面を上側にして矢印A方向に搬入し、矢印B方向に搬出する。基板搬送装置2はローラコンベヤーとして示したが、他の既知の基板搬送装置をも意味する。   FIG. 1 is a diagram for explaining Example 1 of a resist stripping and removing apparatus according to the present invention. FIG. 2 is a perspective view for explaining an arrangement example of the nozzles shown in FIG. 1 and 2, the resist stripping / removing apparatus according to the first embodiment is configured such that a substrate to be processed (hereinafter, also simply referred to as a substrate) 13 on which a substrate transfer apparatus 2 crosses the processing chamber 1 and adheres a resist 14 is a resist adhesion surface. Is loaded in the direction of arrow A, and unloaded in the direction of arrow B. The substrate transport device 2 is shown as a roller conveyor, but it also means other known substrate transport devices.

処理チャンバー1内で、基板13の上方にノズル機構3が設置されている。ノズル機構3はノズルを保持して両ノズルの間隔を可変とするノズル間隔制御機構6に、剥離液を基板1のレジスト面に吹き付ける第1のノズル4と、第1のノズル4とは基板1の搬送方向下流側に所定間隔Dで設置され、基板1のレジスト面に水蒸気を吹き付ける第2のノズル5を取り付けてある。このノズル間隔制御機構6はノズル制御装置7からの制御信号で第1のノズル4と第2のノズル5の基板1の搬送方向間隔Dが可変される。第1のノズル4と第2のノズル5は共に搬送される基板13の当該搬送方向と直交または交差する如く基板の幅方向をカバーする長さで設置されている。   A nozzle mechanism 3 is installed above the substrate 13 in the processing chamber 1. The nozzle mechanism 3 holds the nozzles and the nozzle interval control mechanism 6 that makes the interval between both nozzles variable. The first nozzle 4 that sprays the stripping solution onto the resist surface of the substrate 1 and the first nozzle 4 are the substrate 1. The second nozzle 5 that is installed at a predetermined interval D on the downstream side in the transport direction and blows water vapor onto the resist surface of the substrate 1 is attached. In this nozzle interval control mechanism 6, the conveyance direction interval D of the substrate 1 between the first nozzle 4 and the second nozzle 5 is varied by a control signal from the nozzle control device 7. The first nozzle 4 and the second nozzle 5 are installed with a length that covers the width direction of the substrate so as to be orthogonal to or intersect with the transport direction of the substrate 13 that is transported together.

第1のノズル4はフレキシブルチューブ8で処理チャンバー1の外部に設置された剥離液加圧器11に連通し、第2のノズル5はフレキシブルチューブ8で、同じく処理チャンバー1の外部に設置された水蒸気発生器12に連通している。なお、剥離液加圧器11は剥離液加熱器10を介して図示しない剥離液供給源に接続されている。また、水蒸気発生器12は図示しない純水供給源から供給される純水を加熱して水蒸気を発生する。   The first nozzle 4 communicates with a stripping liquid pressurizer 11 installed outside the processing chamber 1 by a flexible tube 8, and the second nozzle 5 is a flexible tube 8, and water vapor also installed outside the processing chamber 1. It communicates with the generator 12. The stripping liquid pressurizer 11 is connected to a stripping liquid supply source (not shown) via the stripping liquid heater 10. The steam generator 12 generates pure water by heating pure water supplied from a pure water supply source (not shown).

図1の処理チャンバー1に基板13が搬入され、先端が処理部にかかると、第1のノズル4から加熱加圧された剥離液がレジスト14が成膜された基板面に吹き付けられる。剥離液はレジスト14の表面から基板面に達する穴を形成する。この穴から基板面に剥離液が浸透して、レジスト14を所謂リフトオフした状態にする。次いで、剥離液が基板面に浸透した状態でレジスト14は第2のノズル5から吹き付けられる水蒸気に曝され、リフトオフした状態にあったレジストを吹き去られて基板13から除去される。除去されたレジストは処理チャンバー1の底部に設けた排出口から貯蔵装置あるいは適宜の処理装置に排出される。   When the substrate 13 is loaded into the processing chamber 1 of FIG. 1 and the tip is applied to the processing section, the peeling solution heated and pressurized from the first nozzle 4 is sprayed onto the substrate surface on which the resist 14 is formed. The stripping solution forms holes that reach the substrate surface from the surface of the resist 14. The stripping solution permeates the substrate surface from this hole, so that the resist 14 is in a so-called lift-off state. Next, the resist 14 is exposed to water vapor sprayed from the second nozzle 5 in a state where the stripping solution has permeated the substrate surface, and the resist that has been lifted off is blown off and removed from the substrate 13. The removed resist is discharged from a discharge port provided at the bottom of the processing chamber 1 to a storage device or an appropriate processing device.

図3は、本発明におけるレジストの剥離と除去の様子を説明する模式図である。図3(a)は第1のノズル4から加熱加圧された剥離液がレジスト14が成膜された基板面に吹き付けられ、レジスト14に基板面13Aに達する穴15が形成された状態を示す。穴15はレジスト14の表面からランダムに浸透して基板面13Aに達し、基板面13Aを面方向に広がってレジスト14を基板面13Aから引き離す(リフトオフする)。図3(b)は、リフトオフされたレジスト14が第2のノズル5から吹き付けられる水蒸気に曝されて基板面13Aから除去される状態を示す。   FIG. 3 is a schematic diagram for explaining how the resist is stripped and removed in the present invention. FIG. 3A shows a state in which the peeling liquid heated and pressurized from the first nozzle 4 is sprayed onto the substrate surface on which the resist 14 is formed, and a hole 15 reaching the substrate surface 13A is formed in the resist 14. . The holes 15 penetrate at random from the surface of the resist 14 to reach the substrate surface 13A, spread the substrate surface 13A in the surface direction, and pull the resist 14 away from the substrate surface 13A (lift off). FIG. 3B shows a state in which the lifted-off resist 14 is exposed to water vapor sprayed from the second nozzle 5 and removed from the substrate surface 13A.

本発明では、基板の搬送速度とそのレジストの膜質に応じた剥離液の吹き付け温度と吹き付け流量と吹き付け圧力、水蒸気の吹き付け密度と吹き付け圧力をパラメータとして、第1のノズルと第2のノズルの基板の搬送方向の間隔を可変とするノズル間隔制御機構に間隔制御信号を与えるノズル制御装置を備えた。   In the present invention, the substrate of the first nozzle and the second nozzle is used with the parameters of the spraying temperature, spraying flow rate and spraying pressure of the stripper, and the spraying density and spraying pressure of water vapor according to the substrate transport speed and the resist film quality. A nozzle control device for supplying an interval control signal to a nozzle interval control mechanism that makes the interval in the transport direction variable.

本発明では、基板上のレジストに作用する剥離液の設定濃度が水蒸気で希釈されて変化することがないために、レジスト剥離性能が工程中に変化しない。また、基板の搬送速度とそのレジストの膜質に応じた剥離液の吹き付け温度と吹き付け流量と吹き付け圧力、水蒸気の吹き付け密度と吹き付け圧力をパラメータとして第1のノズルと第2のノズルの基板の搬送方向の間隔を可変とすることで、レジストの種類や膜厚等が異なる基板に容易に対応できる。   In the present invention, the resist stripping performance does not change during the process because the set concentration of the stripping solution acting on the resist on the substrate is not diluted with water vapor. Also, the substrate transfer direction of the first nozzle and the second nozzle using the substrate transfer speed and the spraying temperature, spraying flow rate, and spraying pressure of the stripper, and the spraying density and spraying pressure of water vapor as parameters. By making the interval of the variable, it is possible to easily cope with substrates having different resist types, film thicknesses, and the like.

本発明によるレジスト剥離除去装置の実施例1を説明する図である。It is a figure explaining Example 1 of the resist peeling removal apparatus by this invention. 図1に示したノズルの配置例を説明する斜視図である。It is a perspective view explaining the example of arrangement | positioning of the nozzle shown in FIG. 本発明におけるレジストの剥離と除去の様子を説明する模式図である。It is a mimetic diagram explaining a situation of exfoliation and removal of a resist in the present invention.

符号の説明Explanation of symbols

1・・・処理チャンバー、2・・・基板搬送装置、3・・・ノズル機構、4・・・第1のノズル、5・・・第2のノズル、6・・・ノズル間隔制御機構、7・・・ノズル制御装置、8,9・・・フレキシブルチューブ、10・・・剥離液加熱器、11・・・剥離液加圧器、12・・・水蒸気発生器、13・・・被処理基板(基板)、13A・・・基板面、14・・・レジスト、15・・・穴。

DESCRIPTION OF SYMBOLS 1 ... Processing chamber, 2 ... Substrate conveyance apparatus, 3 ... Nozzle mechanism, 4 ... 1st nozzle, 5 ... 2nd nozzle, 6 ... Nozzle space | interval control mechanism, 7 ... Nozzle control device, 8, 9 ... Flexible tube, 10 ... Stripping solution heater, 11 ... Stripping solution pressurizer, 12 ... Steam generator, 13 ... Substrate ( Substrate), 13A ... substrate surface, 14 ... resist, 15 ... hole.

Claims (4)

リソグラフィ工程において一方向に一定の速度で搬送される基板の表面に有するレジストを剥離して除去するレジスト剥離除去装置であって、
一方向に移動する前記基板の前記レジストを有する表面に近接して設置したレジスト剥離液を吹き付ける第1のノズルと、前記第1のノズルの下流に前記基板の前記レジストを有する表面に近接して設置した水蒸気を吹き付ける第2のノズルを備えたことを特徴とするレジスト剥離装置。
A resist stripping / removing apparatus that strips and removes a resist on a surface of a substrate transported at a constant speed in one direction in a lithography process,
A first nozzle for spraying a resist stripping solution installed in the vicinity of the resist-bearing surface of the substrate that moves in one direction, and in proximity to the resist-bearing surface of the substrate downstream of the first nozzle. A resist stripping apparatus comprising a second nozzle for spraying the installed water vapor.
リソグラフィ工程において一方向に一定の速度で搬送される基板の表面に有するレジストを剥離して除去するレジスト剥離除去装置であって、
処理チャンバーと、
前記処理チャンバーを横断して設置され、前記基板を搬入し、搬出するための基板搬送装置と、
前記処理チャンバー内に設置されて前記基板の表面に剥離液を吹き付ける第1のノズルと、前記処理チャンバー内で前記第1のノズルの前記基板の搬送方向下流側に設置されて水蒸気を吹き付ける第2のノズルとを具備したノズル機構と、
前記第1のノズルに供給する剥離液を加熱する剥離液加熱器および剥離液を加圧する剥離液加圧器と、
前記第2のノズルに水蒸気を供給する水蒸気発生器と、
を備えたレジスト剥離除去装置。
A resist stripping / removing apparatus that strips and removes a resist on a surface of a substrate transported at a constant speed in one direction in a lithography process,
A processing chamber;
A substrate transfer device installed across the processing chamber, for loading and unloading the substrate; and
A first nozzle that is installed in the processing chamber and sprays a stripping solution on the surface of the substrate; and a second nozzle that is installed downstream of the first nozzle in the transport direction of the substrate and sprays water vapor in the processing chamber. A nozzle mechanism comprising:
A stripper heater for heating the stripper supplied to the first nozzle and a stripper pressurizer for pressurizing the stripper;
A steam generator for supplying steam to the second nozzle;
A resist stripping and removing apparatus.
前記第1のノズルと前記第2のノズルの前記基板の搬送方向の間隔を可変とするノズル間隔制御機構を備えたことを特徴とする請求項2に記載のレジスト剥離除去装置。   The resist stripping / removing apparatus according to claim 2, further comprising a nozzle interval control mechanism configured to vary an interval between the first nozzle and the second nozzle in the transport direction of the substrate. 前記基板の搬送速度とそのレジストの膜質に応じた前記剥離液の吹き付け温度と吹き付け流量と吹き付け圧力、前記水蒸気の吹き付け密度と吹き付け圧力をパラメータとして、前記第1のノズルと前記第2のノズルの前記基板の搬送方向の間隔を可変とするノズル間隔制御機構に間隔制御信号を与えるノズル制御装置を備えたことを特徴とする請求項3に記載のレジスト剥離除去装置。

The spraying temperature and spraying flow rate and spraying pressure of the stripping solution according to the transport speed of the substrate and the film quality of the resist, the spraying density and spraying pressure of the water vapor as parameters, and the first nozzle and the second nozzle. The resist stripping / removing apparatus according to claim 3, further comprising a nozzle control device that provides an interval control signal to a nozzle interval control mechanism that makes the interval in the substrate transport direction variable.

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