JP2002169304A - Peeling equipment and method of peeling resist film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To lessen the amount of using a peeling liquid and to improve throughput in peeling equipment and peeling method for peeling the resist films formed on the surfaces of glass substrates, etc., used for liquid crystal display panels, plasma display panels, etc. SOLUTION: The peeling equipment 1 for peeling the resist films adhered to the substrate W has a vapor generating vessel body 5 in which the peeling liquid is stored, a heating source 6 which puts the peeling liquid into the state of vapor by heating, a pump 7 which feeds the vapor (peeling liquid) into a treating vessel body 2 and a nozzle 10 which supplies the vapor sent by the pump 7 to the substrate W supported within the treating vessel body 2. Further, the peeling equipment (peeling section) 1 has a residue treating means 20 which removes residues by jetting the peeling liquid to the substrate W.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a peeling apparatus and a peeling method, and more particularly to a film formed on a surface of a glass substrate, a semiconductor wafer, a mask substrate for a semiconductor manufacturing apparatus, etc. used for a liquid crystal display panel or a plasma display panel. The present invention relates to a peeling device or a peeling method for peeling off.

[0002]

2. Description of the Related Art In a photolithography process, for example, a photoresist film (hereinafter, simply referred to as a resist film) is formed on a surface of a substrate to be processed, and subjected to a process such as exposure, development, etching, etc. Perform patterning. After that, the resist film remaining on the substrate is peeled and removed.

[0003] The apparatus for stripping and removing the resist film includes a dip processing tank and a spray processing tank. The dip treatment tank is filled with an organic solvent or an inorganic alkaline stripper. Strongly alkaline NaOH (caustic soda) is used as the inorganic alkaline stripping solution. The spray processing tank has a nozzle for spraying an organic solvent or an inorganic alkali-based stripper in a mist state. Further, it has a roller conveyor arranged to pass through the inside of the dip processing tank and further pass through the inside of the spray processing tank.

A glass substrate is formed by this roller conveyor.
It is carried into the dip processing tank, and passes through the dip processing tank while being in contact with the stripping liquid. At this time, the stripping solution permeates the resist film (pattern) on the surface of the glass substrate, the resist film is swollen, and the swollen resist film is dissolved in the stripping solution and stripped. In order to allow the stripper to sufficiently penetrate the resist film, adjust the speed of the roller conveyor,
The glass substrate may be reciprocated inside the dip tank. The unloaded glass substrate is carried into the spray processing tank, and passes through the inside of the spray processing tank while being sprayed with a stripping liquid in a mist state. At this time, the resist film (residue) remaining on the glass substrate is washed away by the stripping solution sprayed in a mist state, and is completely removed. Thereafter, the stripping solution attached to the glass substrate is washed with pure water and dried.

[0005]

In order to bring the glass substrate into contact with the liquid in the dip tank, the entire glass substrate and the moving means such as a roller belt must be immersed in the stripping liquid. Therefore, such a dipping apparatus requires a large amount of stripper. In addition, this dip tank requires a long processing time to permeate and swell the stripping solution into the cured resist film.

In particular, in recent years, the size of a liquid crystal display device is expected to increase, and the size of a glass substrate and a moving means for moving the glass substrate are expected to increase dramatically. Therefore, a larger amount of a stripper is required. Since a large amount of the stripping solution is used, the cost in the step of stripping the resist film may be significantly increased. Further, the stripping solution after use may become a waste liquid and may adversely affect the environment. In addition, it is necessary to infiltrate and swell all the resist film on the large-sized glass substrate, so that the processing time is significantly increased and the throughput may be reduced.

An object of the present invention is to provide a peeling device or a peeling device for peeling a resist film formed on a surface of a glass substrate, a semiconductor wafer, a mask substrate for a semiconductor manufacturing apparatus, or the like used for a liquid crystal display panel, a plasma display panel, or the like. In the method, it is to reduce the amount of the stripping solution used.

Another object of the present invention is to improve the throughput in a vapor stripping apparatus or a stripping method.

[0009]

According to a first aspect of the present invention, there is provided a resist film removing apparatus for removing a resist film adhered to a substrate, comprising a processing tank main body, a supporting means, and a vapor supply means. I have. A substrate can be arranged inside the processing apparatus main body. The support means is provided in the processing tank main body and supports the substrate. The vapor supply unit supplies the stripper in a vapor state to the substrate supported by the support unit. As the stripping solution, an organic solvent or an organic solvent containing water or an inorganic alkaline solvent is used.

[0010] In the stripping apparatus according to the first aspect, the glass substrate after the etching process is disposed and supported by the support means inside the processing tank main body, and the stripping liquid is supplied in a vapor state from the steam supply means. When the vapor of the stripping solution comes into contact with the resist film, the stripping solution permeates the resist film, and the resist film swells. The swollen resist film is further stripped from the glass substrate by a stripper and removed. At this time, if necessary, the support means may be tilted to tilt the glass substrate. When the glass substrate is tilted, the peeled-off resist pieces are liable to slide off the glass substrate due to gravity, and the resist pieces are easily removed.

The molecules of the stripping solution in a vapor state have higher kinetic energy than the liquid stripping solution, and easily react with the material (resist material) forming the resist film. In other words, in order to remove the resist film, it is necessary to cut the bonds between the atoms constituting the resist material. However, the vapor having a large kinetic energy tends to cut the bonds between the atoms.

According to the stripping apparatus of the first aspect, the stripping of the resist film is facilitated by the stripping liquid in a vapor state having a large kinetic energy. Removal can be performed. Further, since the resist material is easily peeled off by the vapor having a large kinetic energy, the processing time can be shortened and the throughput can be improved.

According to a second aspect of the present invention, there is provided a resist film peeling apparatus.
The stripping apparatus according to claim 1, further comprising a residue removing means for removing a residue attached to the substrate that has passed through the processing tank body.

In the stripping apparatus according to the second aspect, after the resist film is stripped and removed by steam in the processing tank main body, the residue of the resist film attached to the glass substrate is further removed by the residue removing means. The resist film on the glass substrate is almost completely stripped in the processing apparatus main body by vapor (stripping liquid) having a large kinetic energy. But,
Depending on only the vapor (stripping liquid), the stripped resist pieces may not be sufficiently washed away, so that the residue of the resist film is completely washed away by the residue removing means. In the residue removing means, for example, a high-pressure stripper or hot pure water (warm pure water) is sprayed to remove the residue of the resist film.

According to the stripping apparatus of the present invention, not only the stripping process is performed in the main body of the processing apparatus, but also the stripping process is performed in the residue removing means, so that the resist film can be completely removed from the glass substrate. it can.

According to a third aspect of the present invention, there is provided a resist film peeling apparatus.
The apparatus according to claim 2, further comprising a moving means for moving the substrate from the processing tank main body to the residue removing means.
In the apparatus according to claim 3, the glass substrate processed in the processing tank main body is moved to the residue removing means by the moving means, and the residue is removed. As the moving means, there are a roller conveyor, a clean transfer robot, and the like disposed between the processing tank main body and the residue removing means. For example, a glass substrate is carried into a processing tank main body by a roller conveyor, and while moving on the roller conveyor, a vapor (peeling liquid) is jetted, and after carrying out of the processing tank main body, the glass substrate is further conveyed to residue processing means.
As in the processing in the processing tank body, the stripping liquid or pure water may be supplied while moving on the roller conveyor. Alternatively, the clean transfer robot may unload the glass substrate processed in the processing tank body, and may then load the glass substrate into the residue removing unit.

According to the third aspect of the present invention, the glass substrate processed in the processing tank body is automatically transferred to the residue removing means, so that the processing is facilitated and the processing time can be shortened. The resist film peeling apparatus according to claim 4 is the same as the above.
In the apparatus according to any one of Items 1 to 3, the steam supply means includes steam generation means, transportation means, and injection means. The steam generating means heats the stripping solution to generate steam of the stripping solution. The transporting means is connected to the steam generating means and the processing tank main body, and transports the vapor of the stripping liquid to the processing tank main body.
The injection means is provided in the processing tank main body, and injects the vapor of the stripping liquid from the transportation means into the processing apparatus main body.

In the stripping apparatus according to the fourth aspect, the stripping liquid is heated by the steam generating means and turns into steam. The vapor (stripping liquid) is transported to the processing apparatus main body by the transport means, and is injected into the processing apparatus main body by the injection means.
The jetted vapor adheres to the glass substrate and penetrates the resist film to swell, peel off, and remove the resist film. The heating of the stripping solution may be performed directly by a heating source (heating wire or the like), or may be indirectly heated by hot water as described later.

According to the stripping apparatus of the fourth aspect, the stripping liquid can be ejected to the substrate in a vapor state with a simple configuration. According to a fifth aspect of the present invention, in the stripping apparatus according to the fourth aspect, the steam generating means includes a steam generating tank main body in which a stripping liquid is stored, and a heating source provided in the steam generating tank main body. It is configured. In the stripping apparatus according to the fifth aspect, the stripping liquid is stored in the steam generating tank main body, and the stripping liquid is directly heated by a heating source (such as a heating wire). According to the peeling device according to claim 5,
With a simple configuration, the stripping liquid can be in a vapor state.

According to a sixth aspect of the present invention, there is provided a resist film peeling apparatus.
In the peeling device according to claim 4, the steam generating means includes a steam generating tank main body, a water storage tank main body, and a heating source. A stripping solution is stored in the steam generation tank body. The water storage tank main body is connected to the steam generation tank main body, where pure water is stored. The heating source is provided in the water tank main body.

In the peeling apparatus according to the sixth aspect, the pure water stored in the water storage tank body is heated by a heating source (such as a heating wire) into steam, and is supplied to the steam generation tank body. This water vapor heats the stripping liquid to be in a vapor state. According to the stripping apparatus of the sixth aspect, since the stripping liquid is indirectly heated by the steam, the risk of igniting the stripping liquid is reduced as compared with the case where the stripping liquid is directly heated by the heating source. Can be. So, in this case,
The safety in the peeling process is increased.

According to a seventh aspect of the present invention, there is provided an apparatus for removing a resist film.
In the stripping apparatus according to the second aspect, the residue removing means sprays a high-pressure stripping liquid on the substrate. According to the stripping apparatus of the seventh aspect, the resist film residue can be efficiently removed by the high-pressure stripping solution.

The resist film peeling apparatus according to claim 8 is
In the peeling apparatus according to claim 2, the residue removing means injects high-pressure hot pure water to the substrate. According to the stripping apparatus of the eighth aspect, since the resist film residue is removed with hot pure water instead of the stripping solution, the amount of the stripping solution used can be reduced.

According to a ninth aspect of the present invention, there is provided a method of removing a resist film.
This is a stripping method for stripping a resist film adhered to a substrate, and includes two steps. In the first stage, vapor of a stripping liquid is supplied to the substrate to swell and strip the resist film. In the second step, residues of the resist film adhering to the substrate are removed. According to the peeling method of the ninth aspect, the same operation and effect as in the case of the peeling apparatus of the first aspect can be obtained.

According to a tenth aspect of the present invention, in the stripping method according to the ninth aspect, in the first step,
While moving the substrate in one direction, the vapor of the stripping liquid is supplied to the substrate. In the stripping method according to the tenth aspect, the supply speed and the processing time of the stripping liquid in the first stage are calculated in advance, and the substrate is moved in one direction based on the calculated time. According to the stripping method of the tenth aspect, the resist film can be stripped / removed by moving the substrate with simple control.

According to a eleventh aspect of the present invention, in the method of the ninth aspect, the first step comprises the steps of:
The vapor of the stripping liquid is supplied to the substrate while reciprocating the substrate. According to the stripping method of the eleventh aspect, it is possible to sufficiently secure the time for supplying the vapor of the resist liquid to the substrate regardless of the size of the apparatus. Therefore, the resist film can be reliably peeled and removed in a narrow space, and an increase in the size of the apparatus can be prevented.

According to a twelfth aspect of the present invention, there is provided a resist film removing method according to any one of the ninth to eleventh aspects.
The substrate is a substrate after dry etching. In the stripping method according to the twelfth aspect, the stripping ability is high, and a good processing result can be obtained even when the resist is stripped from the substrate after the dry etching.

[0028]

DESCRIPTION OF THE PREFERRED EMBODIMENTS [First Embodiment] FIG. 1 is a sectional view of a resist film peeling apparatus according to one embodiment of the present invention. As shown in FIG. 1, the peeling apparatus includes a peeling section 1 and a residue removing section 20.

[Peeling Section] The peeling section 1 is composed of a processing tank main body 2, a conveyor 3, and a steam supply mechanism 4.

The processing tank main body 2 is a tank having an inlet opening 15 and a passage opening 16.
4 is provided with a slope to facilitate collection. The resist film on the substrate W is swollen, peeled, and removed by the remover inside the processing tank body 2. As a liquid for stripping the resist film, an organic solvent containing water or an organic solvent containing water or an inorganic alkali-based stripping solution is used.

The conveyor 3 is a mechanism as a means for supporting and moving the substrate W, and a roller conveyor is generally used. The conveyor 3 is moved from the entrance opening 15 to the passage opening 1
6 is provided so as to penetrate the processing tank main body 2, and moves inside the processing tank main body 2 while supporting the substrate W. Sensors 12 and 1 for detecting the substrate W are provided near the entrance opening 15 and the passage opening 16 of the conveyor 3.
3 are provided.

The steam supply mechanism 4 mainly includes a steam generating tank main body 5, a heating source 6, a pump 7, and a nozzle 10. The steam generation tank main body 5 is a tank for storing the stripping liquid. The heating source 6 is provided in the steam generation tank main body 5 and is a mechanism for heating the stored stripping solution and converting a part of the stripping solution into a vapor state. As the heating source 6, for example, a heater using a heating wire is used.

The pump 7 is a mechanism for supplying the steam (stripping liquid) generated in the steam generating tank main body 5 to the processing tank main body 2 through a pipe, and one end of the pump 7 is connected to the steam generating tank main body 5 through a pipe. The other end is connected to the processing tank main body 2 via the on-off valve 8, filter 9, and piping. On-off valve 8
Is a mechanism for adjusting the flow rate of steam (stripping liquid) flowing through the piping by adjusting the opening degree of the valve. The filter 9 is configured to remove impurities contained in steam (stripping liquid) flowing through the piping.

The nozzle 10 is provided above the inside of the processing tank main body 2 and is connected to the filter 9 via a pipe. The nozzle 10 is a mechanism for supplying steam (stripping liquid) supplied from the steam generation tank main body 5 through a pipe to the inside of the processing tank main body 2.

The bottom 14 of the processing tank main body 2 is connected to the steam generating tank main body 5 through a pipe.
The stripping liquid collected at the bottom portion 14 is circulated to the steam generation tank main body 5.

[Residue Removal Unit] In the residue removal unit 20, a stripper or hot pure water (warm pure water) is jetted at high pressure onto the substrate.
The residue of the resist film is removed. The residue removing unit 20 includes a residue removing tank main body 21, a conveyor 22, and a liquid supply mechanism 23.

The residue removing tank body 21 is a tank formed integrally with the processing tank body 2 outside the passage opening 16 of the processing tank body 2. An outlet opening 35 is provided on a wall surface of the residue removing tank main body 21 facing the passage opening 16. The outlet opening 35 is an opening for taking out the substrate W after the residue removal processing. A filter 33 is provided at the upper part of the residue removing tank main body 21, and a discharge opening 34 is provided at the lower part.
Is provided. The filter 33 is configured to clean and take in the surrounding downdraft. Discharge opening 34
Is provided for discharging the taken-down airflow and discharging the used stripping solution or pure water. An inclination is provided near the bottom of the residue removing tank main body 21 so that the stripping liquid can be easily discharged from the discharge opening 34.

For the treatment in the residue removing tank body 21, the same stripping solution or hot pure water (warm pure water) as used in the stripping section 1 is used. When hot pure water is used, the amount of stripping solution used can be saved.

The conveyor 22 is a mechanism as a means for supporting and moving the substrate W, like the conveyor 3. The conveyor 22 is provided so as to continuously convey the substrate W conveyed by the conveyor 3 at the passage opening 16 and reach the outlet opening 35. Further, sensors 31 and 32 for detecting the substrate W are provided near the passage opening 16 and the outlet opening 35 of the conveyor 22.

The liquid supply mechanism 23 mainly includes the liquid storage tank body 2
4, a heating source 25, a pump 26, and a nozzle 29. The liquid storage tank main body 24 is a tank for storing a stripping liquid (or pure water) used for processing in the residue removal tank main body 21. The heating source 25 includes a liquid storage tank main body 24.
The stripping solution (or pure water) stored in
Is a mechanism for heating and adjusting the temperature. As the heating source 25, for example, a heater using a heating wire is used similarly to the heating source 6.

The pump 26 is a mechanism for supplying the vapor of the stripping liquid generated in the liquid storage tank main body 24 to the residue removing tank main body 21 via a pipe, and one end of the pump 26 is connected to the liquid storage tank main body 24 via the pipe. The other end is connected to the residue removing tank main body 21 via an on-off valve 27, a filter 28, and piping. As in the case of the stripping section 1, the on-off valve 27 is a mechanism for adjusting the flow rate of the stripping liquid (or pure water) flowing through the pipe, and the filter 28 removes impurities contained in the stripping liquid flowing through the pipe. This is a configuration for removing.

The nozzle 29 is provided above the residue removing tank main body 21 and is connected to the filter 28 via a pipe. The nozzle 29 is a mechanism for injecting the stripping liquid (or pure water) supplied from the liquid storage tank main body 24 via a pipe into the residue removing tank main body 21 at a high pressure. In the residue removing section 20, a high-pressure stripping solution (or hot pure water) is supplied into the residue removing tank main body 21 at a high pressure. 29 is covered by a cover 30.

[Control unit] Stripping unit 1 and residue removing unit 20
Includes a control device 4 for controlling the processing on the substrate W.
0 is connected. The control device 40 controls the movement of the substrate W and the supply amount of the stripping solution or the like to control the resist on the substrate W to be appropriately stripped. This control device 40
Is composed of a control unit 41, inverters 42 and 43, and a memory 44.

The controller 41 controls the sensors 12.
3 and are connected to the sensors 31 and 32 of the residue removing unit 20, and receive positional information of the substrate W in each processing unit.
Further, the control unit 41 outputs a signal to driving means (not shown) of the conveyors 3 and 22 based on the received position information, and controls the movement of the substrate W. Specifically, when the substrate 13 is detected by the sensor 13 in the peeling unit 1 and the processing of the substrate W is still insufficient, the control unit 41
Is rotated in the reverse direction to move the substrate W back to the loading side,
Continue processing. Thereafter, when the sensor 12 detects the substrate W, the control unit 41 rotates the conveyor 3 forward to move the substrate W to the unloading side. Thus, the substrate W
Until the processing is completed, the substrate W is reciprocated in the peeling section 1 so that sufficient time for the processing can be secured.
Similarly, when the substrate 32 is detected by the sensor 32 in the residue removing unit 20 and the processing of the substrate W is not yet sufficient, the control unit 41 rotates the conveyor 22 in the reverse direction and returns the substrate W to the loading side. And continue the process.
Thereafter, when the substrate W is detected by the sensor 31, the control unit 41 rotates the conveyor 22 in the normal direction, and moves the substrate W to the unloading side.

The inverters 42 and 43 are connected to the pump 7 of the processing section 1 and the pump 26 of the residue removing section 20, respectively. The inverters 42 and 43 are mechanisms for supplying electric power to and driving the pumps 7 and 26, respectively. That is, in accordance with a command from the control unit 41, the frequency of the voltage output from the inverters 42 and 43 is controlled, and the discharge pressure of the pumps 7 and 26 is adjusted. In particular, the residue removing unit 20
In this case, it is necessary to supply a high-pressure stripper (or hot pure water), and control is performed so that the frequency of the voltage output from the inverter 43 is increased.

The memory 44 includes a peeling unit 1 and a residue removing unit 2
This is storage means for storing processing conditions (recipe) for the substrate W at 0. The recipe includes, for example, the supply speed of the stripping liquid, the moving speed of the substrate W by the conveyors 3 and 22, the processing time in the stripping unit 1 and the residue removing unit 20, and the like, which are predetermined and stored in the memory 44.

The control unit 41 includes timers TM1 and TM
Two. The timers TM1 and TM2 count the processing times in the stripping unit 1 and the residue removing unit 20 as set times, respectively.

[Control of Stripping Process] The control of the process in the stripping apparatus according to the present embodiment will be described with reference to FIGS.

In step S11 of FIG. 2, when the substrate W is carried into the peeling unit 1, the timer TM1 is started, and the process proceeds to step S12. In step S12, the conveyor 3
Is rotated forward to move the substrate W in the direction of the passage opening 16. At the same time, steam (stripping liquid) is supplied from the nozzle 10 into the processing tank body 2.

In step 13, it is detected whether or not the sensor 13 has detected the substrate W. When the substrate W is detected,
Move to step S14. On the other hand, when the substrate W is not detected, the processing in step S12 is repeated.

In step S14, it is determined whether or not the timer TM1 has counted the set time. If the timer TM1 has not counted the set time, step S16
Move to In step S16, the conveyor 22 is rotated in the reverse direction to move the substrate W in the direction of the entrance opening 15.
Further, the supply of the vapor (stripping liquid) is continued.

In step S17, the sensor 12 detects the substrate W
It is determined whether or not is detected. If the sensor 12 does not detect the substrate W, the processing in step S16 is repeated.
If the sensor 12 detects the substrate W, the process proceeds to step S13.
Move to Then, the processes in steps S12 to S14 are performed again.

On the other hand, if the timer TM1 has counted the set time in step S14, the process proceeds to step S15. In step S15, the conveyor 3 is further rotated forward, the substrate W is unloaded from the peeling unit 1, and the residue removing unit 2
Transport to 0.

As described above, in step S14, the timer TM
As long as 1 does not count the set time, steps S12 to S12
The processes in S13 and S16 to S17 are repeated. Thus, the time required for processing the substrate W is sufficiently secured.

In step S21 of FIG. 3, when the substrate W is carried into the residue removing section 20, the timer TM2 is started. In step S22, the conveyor 22 is rotated forward,
The substrate W is moved in the direction of the outlet opening 35. At the same time, a high-pressure stripper (or hot pure water) is supplied from the nozzle 29 into the residue removing tank main body 21.

In step 23, it is detected whether or not the sensor 32 has detected the substrate W. When the substrate W is detected,
Move to step S24. On the other hand, when the substrate W is not detected, the processing in step S22 is repeated.

In step S24, it is determined whether or not the timer TM2 has counted the set time. If the timer TM2 has not counted the set time, step S26
Move to In step S26, the conveyor 22 is rotated in the reverse direction to move the substrate W in the direction of the passage opening 16.
Further, the supply of the high-pressure stripper (or hot pure water) is continued.

In step S27, the sensor 31 sets the substrate W
It is determined whether or not is detected. If the sensor 31 does not detect the substrate W, the processing in step S26 is repeated.
If the sensor 31 detects the substrate W, the process proceeds to step S23.
Move to Then, the processes in steps S22 to S24 are performed again.

On the other hand, if the timer TM2 has counted the set time in step S24, the process proceeds to step S25. In step S25, the conveyor 22 is further rotated in the normal direction, the substrate W is unloaded from the residue removing unit 20, and the processing in the peeling device is completed.

As described above, in step S24, the timer TM
As long as 2 does not count the set time, steps S22 to S22
The processes in S23 and S26 to S27 are repeated. Thus, the time required for processing the substrate W is sufficiently secured.

According to the peeling device according to the first embodiment, the vapor (peeling liquid) having a large kinetic energy in the peeling section 1.
As a result, the resist film can be easily stripped, so that the amount of the stripping solution used can be reduced. In addition, since the resist film sufficiently swollen by the vapor of the stripping solution is supplied with a stripping solution (or hot pure water) at a high pressure to give an impact force, and the further stripping treatment is performed in the residue removing means, the stripping ability is high. .

Further, since the resist material is easily separated by the vapor having a large kinetic energy, the processing time can be shortened and the throughput can be improved. Also,
After the stripping process is performed in the processing tank main body 2, the stripping process is further performed in the residue removing unit 20, so that the resist film can be completely removed from the substrate W.

This stripping apparatus has a high stripping ability, and a good processing result can be obtained even when the resist is stripped from the substrate after the dry etching. [Second Embodiment] FIG. 4 shows a part of a steam supply mechanism 4 of a peeling device according to a second embodiment. In the second embodiment, pure water is not used in the processing in the residue removing unit 20, and a stripper such as an organic solvent is used.

In the second embodiment, as shown in FIG. 4, instead of the steam generating tank body 5 and the heating source 6 of the first embodiment, a steam generating tank body 5a, a water storage tank 5b, an on-off valve 5c and a heating source 6a are used. Is used.

Unlike the first embodiment, the steam generation tank main body 5a does not have a heating source. In addition, piping and on-off valve 5
and c is connected to the water storage tank 5b. Water storage tank 5b
Is a tank storing pure water, and is provided with a heating source 6a. Here, the on-off valve 5c adjusts the flow area of the pipe by opening and closing the valve.

In the liquid supply mechanism 23 according to the second embodiment,
Pure water in the water storage tank 5b is heated by the heating source 6a to generate steam. This steam is discharged into the stripping solution in the steam generating tank main body 5a via the pipe and the on-off valve 5c, and the stripping solution is indirectly heated by the steam to become steam. The stripping liquid that has been turned into a vapor as described above, as in the first embodiment,
The water is supplied to the processing tank main body 2 by the pump 7.

In the second embodiment, as shown in FIG. 5, instead of the liquid storage tank main body 24 and the heating source 25 of the first embodiment, a liquid storage tank main body 24a, a water storage tank 24b, and an on-off valve 24c are provided.
And a heating source 25a.

The liquid storage tank main body 24a has no heating source, and is connected to the water storage tank 24b via a pipe and an on-off valve 24c. The water storage tank 24b is a tank that stores pure water, and is provided with a heating source 25a. here,
The on-off valve 24c adjusts the flow area of the pipe by opening and closing the valve.

In the liquid supply mechanism 23 according to the second embodiment,
Pure water in the water storage tank 24b is heated by the heating source 25a to generate steam. This water vapor is discharged into the stripping solution in the liquid storage tank main body 24a via the pipe and the opening / closing valve 24c, whereby the stripping solution is indirectly heated. The stripping solution thus heated is supplied to the residue removing tank main body 21 by the pump 26 as in the first embodiment.

The configuration of the second embodiment other than the above is exactly the same as that of the first embodiment, and the description is omitted. According to the stripping apparatus of the second embodiment, since the stripping liquid is heated indirectly by the steam, the stripping liquid is heated directly by the heating source (the first embodiment).
The risk of ignition of the stripping solution can be reduced. Therefore, according to the peeling device according to the second embodiment, safety in the peeling process is improved.

Here, the supply of the stripping solution at a high pressure may be sufficient as long as an impact force sufficient to strip and remove the swollen coating can be applied. The specific pressure varies depending on the strength of adhesion between the film to be peeled and the substrate W. For example, in the above embodiment, in the case of high pressure supply, the pressure in the pipe to the nozzle is, for example, 8 to 20 kg / c.
A pressure of about m ² is good. And the hitting force on the substrate surface is 5
The pressure is set to about 0 g / cm ² or more.

In the above embodiment, the residue removing section 20
In the above, a high-pressure stripping solution or high-pressure hot pure water is used, but if not very high stripping and residue removal performance is required, the stripping solution or hot pure water may be supplied at a low pressure. The specific pressure is, for example, in the above embodiment, the pressure in the pipe to the nozzle, for example, 1 to 2 kg / cm.
And ² about the pressure may be a liquid-driving power, for example 2 g / cm ^{2 or} so below the pressure at the substrate surface using a nozzle for supplying a spray form. In the case of low pressure supply,
For example, using a nozzle having a slit-like opening having a length equal to or greater than the width of the substrate W, a stripping liquid is supplied with almost no pressure on the substrate W in a curtain-like liquid flow along the surface of the substrate W. Such a thing may be used.

When the above-mentioned hot pure water is used, the temperature is about 50 to 60 ° C., but the metal pattern formed on the substrate to be subjected to the peeling treatment is made of a relatively corrosive metal such as aluminum. In some cases, it is preferable to use pure water at room temperature (about 23 to 25 ° C.) or relatively low temperature instead of warm pure water. When the stripper is used at a high pressure, it is used at a high temperature of about 65 to 85 ° C.

[0074]

According to the present invention, since the stripping of the resist film is facilitated by the stripping solution in a vapor state having a large kinetic energy, the resist film is stripped and removed with a smaller amount of stripping solution than in the case of using a dip apparatus. be able to.

Further, since the resist material is easily stripped by the vapor (stripping liquid) having a large kinetic energy, the processing time can be shortened and the throughput can be improved. Also, after performing a peeling process in the processing apparatus body,
Further, since the peeling process is performed in the residue removing means, the resist film can be completely removed from the substrate. When the residue removing unit removes the residue of the resist film by using hot pure water instead of the stripping solution, the amount of the stripping solution used can be further reduced.

In the present invention, since the stripping solution is indirectly heated by the steam, the risk of ignition of the stripping solution can be reduced as compared with the case where the stripping solution is directly heated by a heating source. . In this case, safety in the peeling process is increased.

[Brief description of the drawings]

FIG. 1 is a sectional view of a peeling device according to a first embodiment.

FIG. 2 is a control flowchart in the peeling unit 1.

FIG. 3 is a control flowchart in the residue removing unit 20;

FIG. 4 is a mechanism for heating a stripping solution according to a second embodiment.

FIG. 5 is a mechanism for heating a stripping solution according to a second embodiment.

[Explanation of Signs] 1 Stripping device (peeling unit) 2 Processing tank body 3 Conveyor (supporting means, moving means) 4 Steam generating mechanism (means) 20 Residue removing part (means) 5, 5a Steam generating tank body (steam generating means) 5b Water tank main body 6, 6a Heat source (steam generating means) 7 Pump (transportation means) 10 Nozzle (injection means)

Continued on the front page F term (reference) 2H096 AA25 AA27 LA02 LA03 5F043 BB27 CC12 DD06 DD07 EE07 5F046 MA03 MA10

Claims (12)

[Claims] 1. A stripping apparatus for stripping a resist film adhered to a substrate, comprising: a processing tank main body in which the substrate can be disposed; and a support means provided in the processing tank main body for supporting the substrate. And a vapor supply means for supplying a release liquid in a vapor state to the substrate supported by the support means. 2. The stripping apparatus according to claim 1, further comprising a residue removing unit for removing a residue attached to the substrate passing through the processing tank body. 3. The apparatus according to claim 2, further comprising moving means for moving said substrate from said processing tank main body to said residue removing means.
4. The peeling device according to claim 1. 4. A steam supply means for heating the stripper to generate steam by heating the stripper; a transporter connected to the steam generator to transport steam of the stripper to the processing tank main body; The stripping apparatus according to any one of claims 1 to 3, further comprising an injection unit provided in the processing tank main body and configured to inject a vapor of the stripping liquid from the transport unit onto the substrate. 5. The stripping apparatus according to claim 4, wherein said steam generating means comprises: a steam generating tank main body in which a stripping liquid is stored; and a heating source provided in said steam generating tank main body. 6. The steam generating means includes: a steam generating tank main body storing a stripping solution; a water storing tank main body connected to the steam generating tank main body and storing pure water; The stripping apparatus according to claim 4, comprising a heating source. 7. The stripping apparatus according to claim 2, wherein said residue removing means jets a high-pressure stripping solution onto said substrate. 8. The peeling apparatus according to claim 2, wherein said residue removing means injects high-pressure hot pure water to said substrate. 9. A stripping method for stripping a resist film adhered to a substrate, comprising: supplying a vapor of a stripping liquid to the substrate to swell and strip the resist film; 2nd removal of residual resist film
And a method for removing the resist film. 10. The method for removing a resist film according to claim 9, wherein in the first step, a vapor of a removing liquid is supplied to the substrate while moving the substrate in one direction. 11. The method according to claim 9, wherein in the first step, vapor of a stripping liquid is supplied to the substrate while reciprocating the substrate.
3. The method for stripping a resist film according to item 1. 12. The method according to claim 9, wherein the substrate is a substrate after dry etching.