JP2006221796A5 - - Google Patents

Download PDF

Info

Publication number
JP2006221796A5
JP2006221796A5 JP2006075770A JP2006075770A JP2006221796A5 JP 2006221796 A5 JP2006221796 A5 JP 2006221796A5 JP 2006075770 A JP2006075770 A JP 2006075770A JP 2006075770 A JP2006075770 A JP 2006075770A JP 2006221796 A5 JP2006221796 A5 JP 2006221796A5
Authority
JP
Japan
Prior art keywords
power supply
mos transistor
sub
control signal
conductive state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006075770A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006221796A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2006075770A priority Critical patent/JP2006221796A/ja
Priority claimed from JP2006075770A external-priority patent/JP2006221796A/ja
Publication of JP2006221796A publication Critical patent/JP2006221796A/ja
Publication of JP2006221796A5 publication Critical patent/JP2006221796A5/ja
Pending legal-status Critical Current

Links

JP2006075770A 1995-06-02 2006-03-20 半導体装置 Pending JP2006221796A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006075770A JP2006221796A (ja) 1995-06-02 2006-03-20 半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13634995 1995-06-02
JP2006075770A JP2006221796A (ja) 1995-06-02 2006-03-20 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP02757496A Division JP4198201B2 (ja) 1995-06-02 1996-02-15 半導体装置

Publications (2)

Publication Number Publication Date
JP2006221796A JP2006221796A (ja) 2006-08-24
JP2006221796A5 true JP2006221796A5 (enrdf_load_stackoverflow) 2007-06-21

Family

ID=36983984

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006075770A Pending JP2006221796A (ja) 1995-06-02 2006-03-20 半導体装置

Country Status (1)

Country Link
JP (1) JP2006221796A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016092536A (ja) 2014-10-31 2016-05-23 ルネサスエレクトロニクス株式会社 半導体装置
JP6779960B2 (ja) * 2018-11-07 2020-11-04 ルネサスエレクトロニクス株式会社 半導体装置
CN112885390B (zh) * 2021-02-24 2024-08-09 上海华力微电子有限公司 一种具有数据保持功能的低功耗静态随机存取存储器电路
CN115102511A (zh) * 2022-06-17 2022-09-23 长鑫存储技术有限公司 一种数据处理电路、方法和半导体存储器

Similar Documents

Publication Publication Date Title
JP2005267837A5 (enrdf_load_stackoverflow)
US10176863B2 (en) Memory array with bit-lines connected to different sub-arrays through jumper structures
JP5288391B2 (ja) 半導体記憶装置
US9830996B2 (en) Efuse bit cell, and read/write method thereof, and efuse array
WO2015083754A1 (ja) Ｓｔｔ－ｍｒａｍを使用した半導体記憶装置
US9640271B2 (en) Low-dropout regulator peak current control
US10236055B1 (en) Memory element write-assist circuitry with dummy bit lines
US20160336062A1 (en) Accessing a resistive storage element-based memory cell array
US20150213884A1 (en) Partitioned resistive memory array
US10373675B2 (en) Semiconductor storage device
JP2010244607A (ja) 半導体記憶装置
US9373399B2 (en) Resistance variable element methods and apparatuses
KR102326332B1 (ko) 독출 컬럼 선택 네거티브 부스트 드라이버 회로 및 시스템
US9466355B2 (en) Memory architecture dividing memory cell array into independent memory banks
KR101194939B1 (ko) 비휘발성 메모리 장치
US9754666B2 (en) Resistive ratio-based memory cell
KR20140098645A (ko) 저항 기반의 랜덤 액세스 메모리
JP2006221796A5 (enrdf_load_stackoverflow)
US10706917B2 (en) Semiconductor memory device
KR100801710B1 (ko) 비휘발성 메모리 장치 및 이 장치를 구비하는 메모리시스템.
JP5150932B2 (ja) 半導体記憶装置
US10468081B2 (en) Semiconductor storage device
US9449679B2 (en) Memory devices and control methods thereof
CN111028876B (zh) 实现双方向并行数据读取的非挥发存储阵列
JP2006179181A5 (enrdf_load_stackoverflow)