JP2006212770A - 感光性mems構造 - Google Patents
感光性mems構造 Download PDFInfo
- Publication number
- JP2006212770A JP2006212770A JP2006005642A JP2006005642A JP2006212770A JP 2006212770 A JP2006212770 A JP 2006212770A JP 2006005642 A JP2006005642 A JP 2006005642A JP 2006005642 A JP2006005642 A JP 2006005642A JP 2006212770 A JP2006212770 A JP 2006212770A
- Authority
- JP
- Japan
- Prior art keywords
- plate
- bars
- bimorph
- mems structure
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims description 29
- 238000010438 heat treatment Methods 0.000 abstract description 15
- 238000000034 method Methods 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 229910010271 silicon carbide Inorganic materials 0.000 description 12
- 238000000151 deposition Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 239000006096 absorbing agent Substances 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005452 bending Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical class [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N10/00—Electric motors using thermal effects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/38—Radiation pyrometry, e.g. infrared or optical thermometry using extension or expansion of solids or fluids
- G01J5/40—Radiation pyrometry, e.g. infrared or optical thermometry using extension or expansion of solids or fluids using bimaterial elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0292—Sensors not provided for in B81B2201/0207 - B81B2201/0285
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Micromachines (AREA)
- Radiation Pyrometers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/036,438 US7324323B2 (en) | 2005-01-13 | 2005-01-13 | Photo-sensitive MEMS structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006212770A true JP2006212770A (ja) | 2006-08-17 |
| JP2006212770A5 JP2006212770A5 (enExample) | 2009-03-12 |
Family
ID=36652578
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006005642A Withdrawn JP2006212770A (ja) | 2005-01-13 | 2006-01-13 | 感光性mems構造 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US7324323B2 (enExample) |
| JP (1) | JP2006212770A (enExample) |
| CN (1) | CN1821049A (enExample) |
| CA (1) | CA2530252A1 (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1619495A1 (en) * | 2004-07-23 | 2006-01-25 | Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO | Method and Apparatus for inspecting a specimen surface and use of fluorescent materials |
| US7324323B2 (en) * | 2005-01-13 | 2008-01-29 | Lucent Technologies Inc. | Photo-sensitive MEMS structure |
| US7495199B2 (en) * | 2006-02-10 | 2009-02-24 | Stmicroelectronics, Inc. | MEMS radiometer |
| US20070246665A1 (en) * | 2006-04-20 | 2007-10-25 | Lafond Peter H | Mechanical isolation for mems devices |
| US7485870B2 (en) * | 2006-09-12 | 2009-02-03 | Alcatel-Lucent Usa Inc. | Pneumatic infrared detector |
| US7580175B2 (en) * | 2007-06-21 | 2009-08-25 | Alcatel-Lucent Usa Inc. | Detector of infrared radiation having a bi-material transducer |
| US7851759B2 (en) * | 2007-06-21 | 2010-12-14 | Alcatel-Lucent Usa Inc. | Infrared imaging apparatus |
| DE102008011175B4 (de) * | 2008-02-26 | 2010-05-12 | Nb Technologies Gmbh | Mikromechanischer Aktuator und Verfahren zu seiner Herstellung |
| US7842923B2 (en) * | 2008-07-28 | 2010-11-30 | Alcatel-Lucent Usa Inc. | Thermal actuator for an infrared sensor |
| TW201243287A (en) * | 2011-04-28 | 2012-11-01 | Hon Hai Prec Ind Co Ltd | Laser range finder |
| JP6336904B2 (ja) | 2011-08-17 | 2018-06-06 | デジタルダイレクト・アイアール、インク | 撮像システム用受動型検出装置 |
| JP6892727B2 (ja) * | 2016-09-26 | 2021-06-23 | カンタツ株式会社 | パターン製造装置、パターン製造方法およびパターン製造プログラム |
| US12089374B2 (en) | 2018-08-10 | 2024-09-10 | Frore Systems Inc. | MEMS-based active cooling systems |
| US11464140B2 (en) | 2019-12-06 | 2022-10-04 | Frore Systems Inc. | Centrally anchored MEMS-based active cooling systems |
| US10943850B2 (en) | 2018-08-10 | 2021-03-09 | Frore Systems Inc. | Piezoelectric MEMS-based active cooling for heat dissipation in compute devices |
| CN114586479B (zh) | 2019-10-30 | 2025-08-19 | 福珞尔系统公司 | 基于mems的气流系统 |
| US11510341B2 (en) * | 2019-12-06 | 2022-11-22 | Frore Systems Inc. | Engineered actuators usable in MEMs active cooling devices |
| US11796262B2 (en) | 2019-12-06 | 2023-10-24 | Frore Systems Inc. | Top chamber cavities for center-pinned actuators |
| US12193192B2 (en) | 2019-12-06 | 2025-01-07 | Frore Systems Inc. | Cavities for center-pinned actuator cooling systems |
| US12029005B2 (en) | 2019-12-17 | 2024-07-02 | Frore Systems Inc. | MEMS-based cooling systems for closed and open devices |
| US12033917B2 (en) | 2019-12-17 | 2024-07-09 | Frore Systems Inc. | Airflow control in active cooling systems |
| KR102809879B1 (ko) | 2020-10-02 | 2025-05-22 | 프로리 시스템스 인코포레이티드 | 능동 방열판 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4241045C1 (de) * | 1992-12-05 | 1994-05-26 | Bosch Gmbh Robert | Verfahren zum anisotropen Ätzen von Silicium |
| US5629790A (en) * | 1993-10-18 | 1997-05-13 | Neukermans; Armand P. | Micromachined torsional scanner |
| US5880921A (en) * | 1997-04-28 | 1999-03-09 | Rockwell Science Center, Llc | Monolithically integrated switched capacitor bank using micro electro mechanical system (MEMS) technology |
| US6392221B1 (en) * | 1997-12-22 | 2002-05-21 | Agere Systems Guardian Corp. | Micro-electro-mechanical optical device |
| US6242989B1 (en) * | 1998-09-12 | 2001-06-05 | Agere Systems Guardian Corp. | Article comprising a multi-port variable capacitor |
| US6140646A (en) * | 1998-12-17 | 2000-10-31 | Sarnoff Corporation | Direct view infrared MEMS structure |
| US6201631B1 (en) * | 1999-10-08 | 2001-03-13 | Lucent Technologies Inc. | Process for fabricating an optical mirror array |
| US6229684B1 (en) * | 1999-12-15 | 2001-05-08 | Jds Uniphase Inc. | Variable capacitor and associated fabrication method |
| US6708491B1 (en) * | 2000-09-12 | 2004-03-23 | 3M Innovative Properties Company | Direct acting vertical thermal actuator |
| US6698201B1 (en) * | 2001-08-16 | 2004-03-02 | Zyvex Corporation | Cascaded bimorph rotary actuator |
| US6858911B2 (en) * | 2002-02-21 | 2005-02-22 | Advanced Micriosensors | MEMS actuators |
| DE60332007D1 (de) * | 2002-02-26 | 2010-05-20 | Univ Michigan | Tungen auf mems-basis und lc-tankvorrichtung zur verwendung darin |
| US7146014B2 (en) * | 2002-06-11 | 2006-12-05 | Intel Corporation | MEMS directional sensor system |
| US7015885B2 (en) * | 2003-03-22 | 2006-03-21 | Active Optical Networks, Inc. | MEMS devices monolithically integrated with drive and control circuitry |
| US6781744B1 (en) * | 2003-06-11 | 2004-08-24 | Lucent Technologies Inc. | Amplification of MEMS motion |
| US7324323B2 (en) * | 2005-01-13 | 2008-01-29 | Lucent Technologies Inc. | Photo-sensitive MEMS structure |
-
2005
- 2005-01-13 US US11/036,438 patent/US7324323B2/en not_active Expired - Fee Related
- 2005-12-14 CA CA002530252A patent/CA2530252A1/en not_active Abandoned
-
2006
- 2006-01-11 CN CNA2006100036757A patent/CN1821049A/zh active Pending
- 2006-01-13 JP JP2006005642A patent/JP2006212770A/ja not_active Withdrawn
-
2007
- 2007-10-31 US US11/982,002 patent/US7616425B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20060152105A1 (en) | 2006-07-13 |
| CN1821049A (zh) | 2006-08-23 |
| US20080068123A1 (en) | 2008-03-20 |
| US7324323B2 (en) | 2008-01-29 |
| CA2530252A1 (en) | 2006-07-13 |
| US7616425B2 (en) | 2009-11-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7616425B2 (en) | Photo-sensitive MEMS structure | |
| US7969639B2 (en) | Optical modulator | |
| US6876484B2 (en) | Deformable segmented MEMS mirror | |
| US6201243B1 (en) | Microbridge structure and method for forming the microbridge structure | |
| US7755049B2 (en) | Tunable microcantilever infrared sensor | |
| JP5291859B2 (ja) | 懸架状態に固定された吸収膜を備えた熱電磁放射検出器 | |
| WO2010138968A2 (en) | Method and apparatus for providing high-fill-factor micromirror/micromirror arrays with surface mounting capability | |
| CN106629578B (zh) | 具有微桥结构的红外探测器及其制造方法 | |
| JP2006258815A (ja) | ボロメータ検出器、そのような検出器を使用して赤外線を検出するための装置、およびこの検出器の製造方法 | |
| US20090321644A1 (en) | Bolometer and method of producing a bolometer | |
| KR100517428B1 (ko) | 적외선 볼로메타 | |
| PL176509B1 (pl) | Układ zwierciadeł cienkowarstwowych ruchomych do optycznego urządzenia projekcyjnego i sposób wytwarzania układu zwierciadeł cienkowarstwowych ruchomych, zwłaszcza do optycznego urządzenia projekcyjnego | |
| TW201432233A (zh) | 用於輻射熱測定器的懸架以及吸收器結構 | |
| US6781744B1 (en) | Amplification of MEMS motion | |
| US7741603B2 (en) | Microcantilever infrared sensor array | |
| KR100988477B1 (ko) | 마이크로 히터 및 그 제조방법 | |
| RU2489688C2 (ru) | Тепловой детектор с повышенной изоляцией | |
| US7842923B2 (en) | Thermal actuator for an infrared sensor | |
| KR101408905B1 (ko) | 고 응답 멤스 디바이스 및 그 제조방법 | |
| US20080169522A1 (en) | Moving element and method of manufacturing the same | |
| US8842353B2 (en) | Microstructure and method of manufacturing the same | |
| US8183079B2 (en) | Semiconductor device and method of manufacturing the same | |
| US7159397B1 (en) | Tensile-stressed microelectromechanical apparatus and tiltable micromirrors formed therefrom | |
| JPH11258056A (ja) | 放射検出装置 | |
| KR100643708B1 (ko) | 높은 응답도를 갖는 볼로 미터 구조 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090109 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090109 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20101217 |